CN110187169A - A kind of microwave power detector and microwave power measurement method - Google Patents
A kind of microwave power detector and microwave power measurement method Download PDFInfo
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- CN110187169A CN110187169A CN201910495356.XA CN201910495356A CN110187169A CN 110187169 A CN110187169 A CN 110187169A CN 201910495356 A CN201910495356 A CN 201910495356A CN 110187169 A CN110187169 A CN 110187169A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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Abstract
The invention discloses a kind of microwave power detectors, comprising: substrate, co-planar waveguide unit on substrate is set and the measuring unit of coplanar waveguide structure side is set, co-planar waveguide unit includes coplanar waveguide structure and absorption resistance, coplanar waveguide structure receive microwave signal is simultaneously transferred to absorption resistance, microwave signal generates loss on absorption resistance causes the temperature of absorption resistance to increase, measuring unit includes graphene film and driving electrodes, the temperature of graphene film induced absorption resistance increases and reduces the resistance value of graphene film, changing the regulation voltage being applied in driving electrodes makes the resistance value of graphene film be returned to initial value to realize the microwave power measurement of microwave signal.The above-mentioned micropower sensor based on regulating and controlling voltage graphene film has many advantages, such as that structure is simple, high sensitivity, measurement range is big, measurement accuracy is high, small in size and Si or GaAs process compatible, low cost, meet requirement of the integrated circuit to device, improves applicability.
Description
Technical field
The present invention relates to technical field of microelectronic devices, in particular to a kind of to utilize the microwave power being lost on absorption resistance
Cause temperature raising that the resistance of graphene film is caused to change, is mended by changing the regulation voltage applied in driving electrodes
The variation of graphene film resistance is repaid, to measure the microwave power detector and microwave of the microwave power transmitted on co-planar waveguide
Power measurement method.
Background technique
In research of microwave technology, microwave power is an important parameter for characterizing microwave signal feature.In microwave wireless
Using in measuring technique, the detection of microwave power is a very important part.The technology of traditional measurement microwave power
It is to realize that these are terminal part, and microwave signal will be complete in power measurement based on thermistor, thermocouple or diode
It totally disappeared and consume.
In recent years, external to propose terminal type microwave power detector structure of two classes based on MEMS technology: one is benefits
Local temperature is caused to increase the microwave signal loss fever on co-planar waveguide signal wire with build-out resistor, by being placed on matching
Thermoelectric pile temperature sensor variation near resistance is translated into thermoelectrical potential output and realizes microwave power measurement, and another kind is by one
A thermocouple is designed to that build-out resistor is placed on co-planar waveguide line terminal simultaneously, and build-out resistor absorbs on co-planar waveguide signal wire
Microwave signal loss fever cause local temperature to increase, while this temperature change of the thermocouple induction as build-out resistor by its
It is converted into thermoelectrical potential output and realizes microwave power measurement.The terminal type microwave power detector of above two type is to a certain degree
On can satisfy the measurement of microwave power.
However, the extensive use with microelectronic component in each field, people to the sensitivity of microwave power detector with
More stringent requirements are proposed for measurement accuracy, the terminal type microwave power detector of above two type by structure or Effect of Materials without
Method further promotes sensitivity and measurement accuracy, limits the application of power sensor to a certain extent.
Summary of the invention
The purpose of the present invention is in view of the above shortcomings of the prior art, propose a kind of microwave power detector and microwave power
Measurement method causes temperature using the microwave power being lost on absorption resistance using the principle of regulating and controlling voltage graphene resistance variations
Degree, which increases, causes the resistance of graphene film to change, and compensates graphite by changing the regulation voltage applied in driving electrodes
The variation of alkene film resistor effectively increases sensitivity and measurement accuracy to measure the microwave power transmitted on co-planar waveguide,
And then improve the applicability of microwave power detector.
To achieve the above object, on the one hand, the present invention provides a kind of microwave power detector, which includes: lining
Bottom is arranged co-planar waveguide unit on substrate and the measuring unit of coplanar waveguide structure side, co-planar waveguide unit is arranged in
Including coplanar waveguide structure and absorption resistance, coplanar waveguide structure receive microwave signal is simultaneously transferred to absorption resistance, microwave signal
Loss is generated on absorption resistance causes the temperature of absorption resistance to increase, and measuring unit includes graphene film and driving electrodes,
The temperature of graphene film induced absorption resistance increases and reduces the resistance value of graphene film, and change is applied to driving electrodes
On regulation voltage so that the resistance value of graphene film is returned to initial value to realize the microwave power measurement of microwave signal.
Further, coplanar waveguide structure include setting co-planar waveguide signal wire on substrate with relative to co-planar waveguide
The symmetrically arranged first co-planar waveguide ground wire of signal wire and the second co-planar waveguide ground wire.
Further, absorption resistance includes first be set between co-planar waveguide signal wire and the first co-planar waveguide ground wire
Absorption resistance, and the second absorption resistance being set between co-planar waveguide signal wire and the second co-planar waveguide ground wire.
Further, the first absorption resistance and the second absorption resistance are symmetrical arranged relative to co-planar waveguide signal wire.
Further, measuring unit further includes the dielectric layer being set between graphene film and driving electrodes.
Further, the material of dielectric layer is SiO2 or Si3N4, with a thickness of 200nm-500nm.
Further, measuring unit further includes relative to symmetrically arranged first metal block of graphene film and the second metal
Block.
Further, the position of graphene film is corresponding with the position of co-planar waveguide signal wire, the position of the first metal block
Set corresponding with the position of the first co-planar waveguide ground wire, the position of the second metal block is opposite with the position of the second co-planar waveguide ground wire
It answers.
Further, the shape of graphene film is rectangle, and the length range of rectangle is 20um-100um, and width range is
200um-1000um, thickness range 0.2nm-1nm.
On the other hand, the present invention also provides a kind of microwave power measurement method, using microwave power detector as above,
Include the following steps:
S1, the resistance of graphene film is adjusted to by initial value by driving electrodes application regulation voltage；
S2, microwave signal is inputted, the microwave signal on co-planar waveguide signal wire can generate loss on absorption resistance to be caused
Absorption resistance temperature increases, and the temperature for being placed on the graphene film induced absorption resistance near absorption resistance increases and makes graphite
The resistance value of alkene film reduces；
The regulation voltage that S3, change are applied in driving electrodes makes the resistance value of graphene film be returned to initial value with reality
The microwave power measurement of existing microwave signal.
Compared with the prior art, the present invention has the following technical effect that:
Microwave power detector provided by the invention includes: substrate, the co-planar waveguide unit of setting on substrate and setting
Measuring unit in coplanar waveguide structure side, co-planar waveguide unit include coplanar waveguide structure and absorption resistance, co-planar waveguide
Structure receive microwave signal is simultaneously transferred to absorption resistance, and microwave signal generates loss on absorption resistance leads to the temperature of absorption resistance
Degree increases, and measuring unit includes graphene film and driving electrodes, and the temperature of graphene film induced absorption resistance increases and makes
The resistance value of graphene film reduces, and changing the regulation voltage being applied in driving electrodes replys the resistance value of graphene film
The microwave power measurement of microwave signal is realized to initial value.The above-mentioned micropower based on regulating and controlling voltage graphene film structure passes
For sensor compared with traditional MEMS terminal type microwave power detector, structure is simpler, and has high sensitivity, measurement range
Greatly, the advantages that measurement accuracy is high, small in size, with Si or GaAs process compatible, low production cost, meets integrated circuit pair well
The basic demand of device, improves applicability.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of microwave power detector provided in an embodiment of the present invention.
Wherein: 1, co-planar waveguide unit；11, coplanar waveguide structure；111, co-planar waveguide ground wire；112, the first co-planar waveguide
Ground wire；113, the second co-planar waveguide ground wire；12, absorption resistance；121, the first absorption resistance；122, the second absorption resistance；2, it surveys
Measure unit；21, graphene film；22, driving electrodes；23, dielectric layer；24, the first metal block；25, the second metal block.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
In addition, the terms "and/or", only a kind of incidence relation for describing affiliated partner, indicates may exist
Three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three situations of individualism B.Separately
Outside, character "/" herein typicallys represent the relationship that forward-backward correlation object is a kind of "or".
The embodiment of the present invention provides a kind of microwave power detector, as shown in Figure 1, the sensor include: substrate, setting exist
Co-planar waveguide unit 1 on substrate and the measuring unit 2 that 1 side of co-planar waveguide unit is arranged in, co-planar waveguide unit 1 includes altogether
Surface wave guide structure 11 and absorption resistance 12,11 receive microwave signal of coplanar waveguide structure are simultaneously transferred to absorption resistance 12, microwave letter
Loss is generated number on absorption resistance 12 causes the temperature of absorption resistance 12 to increase, measuring unit 2 include graphene film 21 and
The temperature of driving electrodes 22,21 induced absorption resistance 12 of graphene film increases and reduces the resistance value of graphene film 21,
Changing the regulation voltage being applied in driving electrodes 22 makes the resistance value of graphene film 21 be returned to initial value to realize microwave
The microwave power measurement of signal.
Wherein, substrate plays support fixed function, and the material of substrate is silicon (Si) or GaAs (GaAs).
Coplanar waveguide structure 11 include setting co-planar waveguide signal wire 111 on substrate with relative to co-planar waveguide signal
The symmetrically arranged first co-planar waveguide ground wire 112 of line 111 and the second co-planar waveguide ground wire 113.
Absorption resistance 12 includes first be set between co-planar waveguide signal wire 111 and the first co-planar waveguide ground wire 112
Absorption resistance 121, and the second absorption electricity being set between co-planar waveguide signal wire 111 and the second co-planar waveguide ground wire 113
Resistance 122.
Preferably, the first absorption resistance 121 is symmetrically set with the second absorption resistance 122 relative to co-planar waveguide signal wire 111
It sets.
Preferably, at a distance of 200um, as co-planar waveguide center between the first absorption resistance 121 and the second absorption resistance 122
The width of signal wire.
Measuring unit 2 is set to the side of co-planar waveguide unit 1 comprising graphene film 21 and driving electrodes 22, stone
The temperature of black 21 induced absorption resistance 12 of alkene film increases and reduces the resistance value of graphene film 21, and change is applied to driving
Regulation voltage on electrode 22 makes the resistance value of graphene film 21 be returned to initial value to realize the microwave power of microwave signal
Measurement.
Preferably, measuring unit 2 further includes the dielectric layer 23 being set between graphene film 21 and driving electrodes 22.
Preferably, the material of dielectric layer is SiO2Or Si3N4, with a thickness of 200nm-500nm.The beneficial effect being arranged in this way
It is that the dielectric layer of 200nm-500nm thickness had not only well ensured applied voltage to the regulating effect of graphene resistance, but also not
The regulation to graphene resistance is caused to be failed by electric field breakdown as dielectric layer.
Preferably, measuring unit 2 further includes relative to symmetrically arranged first metal block 24 and second of graphene film 21
Metal block 25.
Preferably, the position of graphene film 21 is corresponding with the position of co-planar waveguide signal wire 111, the first metal block 24
Position it is corresponding with the position of the first co-planar waveguide ground wire 112, the position of the second metal block 25 and the second co-planar waveguide ground wire
113 position is corresponding.
Preferably, the shape of graphene film 21 is rectangle, and the length range of rectangle is 20um-100um, and width range is
200um-1000um, thickness range 0.2nm-1nm.
Preferably, having a size of 30um*300um*1nm, a length of 30um, width 300um, thickness 1nm.The purpose being arranged in this way
It is initial resistance size one suitable value for making graphene film, to obtain broader modification scope and more highly sensitive
Measurement effect.
Microwave power detector provided by the invention is mainly based upon regulation voltage and regulates and controls to graphene film resistance
Principle.Wherein, graphene film (21) is placed on above the SiO2 dielectric layer (23) of several hundred nanometer thickness, SiO2 dielectric layer
(23) lower section is driving electrodes (22), and driving electrodes (22) can be in a manner of applying driving voltage on graphene film (21)
Form an electric field, i.e., the fermi level EF of adjustable graphene film and corresponding carrier density.The power sensor
Before test, it first passes through driving electrodes application regulation voltage and the resistance of graphene film is adjusted to a suitable initial value.
Microwave signal on co-planar waveguide signal wire can generate loss on absorption resistance causes local temperature to increase, and is placed on suction at this time
The raising for receiving the graphene film meeting temperature sensor near resistance causes its resistance value to reduce compared with initial value, drives eventually by changing
Graphene film resistance is returned to the measurement that initial value realizes microwave power by the regulation voltage applied on moving electrode.
On the other hand, the embodiment of the invention also provides a kind of microwave power measurement methods, using microwave power as above
Sensor includes the following steps:
S1, the resistance of graphene film is adjusted to by initial value by driving electrodes application regulation voltage；
S2, microwave signal is inputted, the microwave signal on co-planar waveguide signal wire can generate loss on absorption resistance to be caused
Absorption resistance temperature increases, and the temperature for being placed on the graphene film induced absorption resistance near absorption resistance increases and makes graphite
The resistance value of alkene film reduces；
The regulation voltage that S3, change are applied in driving electrodes makes the resistance value of graphene film be returned to initial value with reality
The microwave power measurement of existing microwave signal.
It is electric using absorbing using the principle of regulating and controlling voltage graphene resistance variations using above-mentioned microwave power measurement method
Microwave signal loss fever on co-planar waveguide signal wire is caused local temperature to increase by resistance, by being placed near absorption resistance
Graphene film temperature sensor change and film resistor caused to deviate initial value, apply in driving electrodes eventually by changing
Graphene film resistance is returned to the measurement that initial value realizes microwave power by regulation voltage.
To sum up, the microwave power detector based on regulating and controlling voltage graphene film structure is different from traditional microwave in the present invention
Power sensor arrangement, the structure is using New Two Dimensional material graphene film as sensing material, so that microwave power senses
Device can be promoted.Microwave power detector based on regulating and controlling voltage graphene film structure has the following main features: one,
The response of the resistance versus temperature of graphene film is more sensitive, therefore sensitivity can be improved；Two, the resistance of graphene film can
To be regulated and controled on a large scale in the regulation voltage of very little, therefore the measurement range of microwave power can be improved；Three, pass through load
The method that graphene film resistance value is returned back to initial value by regulation voltage, eliminates various thermal losses bring measurement errors, mentions
High measurement accuracy；Four, the production of the power sensor of regulating and controlling voltage graphene film structure without special material and with
Si or GaAs technique is completely compatible.
Distinguish whether be the structure standard it is as follows:
(a) coplanar waveguide structure is used,
(b) measurement of microwave power is realized using graphene film,
(c) using the variation of regulation voltage compensation graphene film resistance.
The structure for meeting three above condition should be regarded as the microwave power based on regulating and controlling voltage graphene film structure
The structure of sensor.
Function may be implemented using the microwave power detector structure based on regulating and controlling voltage graphene film structure in the present invention
The industrial application of rate measurement structure in integrated circuits, and then push the development of entire IC industry.
Since graphene specific peculiar electronic structure, high carrier mobility, excellent mechanics, thermal property etc. are excellent
The power sensor of gesture, the regulating and controlling voltage graphene film structure in the present invention is also based on MEMS technology, but is different from above-mentioned
Terminal type microwave power detector, which is the principle using regulating and controlling voltage graphene resistance variations, utilizes absorption resistance
Local temperature is caused to increase the microwave signal loss fever on co-planar waveguide signal wire, by being placed near absorption resistance
Graphene film temperature sensor changes and film resistor is caused to deviate initial value, eventually by the tune applied in change driving electrodes
Graphene film resistance is returned to the measurement that initial value realizes microwave power by control voltage.It can readily be seen that the present invention with
Traditional MEMS terminal type microwave power detector structure compared is simpler, and has that high sensitivity, measurement range be big, measurement
The advantages that precision is high, small in size, with Si or GaAs process compatible, low cost, meets integrated circuit to the base of device well
This requirement.Therefore, microwave power detector based on regulating and controlling voltage graphene film structure has preferable application value and wide
Wealthy market potential.
Through the above description of the embodiments, it is apparent to those skilled in the art that, for description
It is convenienct and succinct, only with the division progress of above-mentioned each functional unit for example, in practical application, can according to need and will be upper
It states function distribution to be completed by different functional units, i.e., the internal structure of device is divided into different functional units, to complete
All or part of function described above.The specific work process of the system, apparatus, and unit of foregoing description, before can referring to
The corresponding process in embodiment of the method is stated, details are not described herein.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of microwave power detector, which is characterized in that the sensor includes: substrate, setting being total to over the substrate
Face Wave guide unit and the measuring unit that the coplanar waveguide structure side is arranged in, the co-planar waveguide unit includes co-planar waveguide
Structure and absorption resistance, the coplanar waveguide structure receive microwave signal are simultaneously transferred to the absorption resistance, the microwave signal
Loss is generated on the absorption resistance causes the temperature of the absorption resistance to increase, and the measuring unit includes graphene film
With driving electrodes, the temperature that the graphene film incudes the absorption resistance increases and makes the resistance value of the graphene film
Reduce, change the regulation voltage that is applied in the driving electrodes make the resistance value of the graphene film be returned to initial value with
Realize the microwave power measurement of the microwave signal.
2. microwave power detector according to claim 1, which is characterized in that the coplanar waveguide structure includes that setting exists
Co-planar waveguide signal wire on the substrate with relative to symmetrically arranged first co-planar waveguide of the co-planar waveguide signal wire
Line and the second co-planar waveguide ground wire.
3. microwave power detector according to claim 2, which is characterized in that the absorption resistance is described including being set to
The first absorption resistance between co-planar waveguide signal wire and the first co-planar waveguide ground wire, and it is set to the co-planar waveguide
The second absorption resistance between signal wire and the second co-planar waveguide ground wire.
4. microwave power detector according to claim 3, which is characterized in that first absorption resistance and described second
Absorption resistance is symmetrical arranged relative to the co-planar waveguide signal wire.
5. microwave power detector according to claim 1, which is characterized in that the measuring unit further includes being set to institute
State the dielectric layer between graphene film and the driving electrodes.
6. microwave power detector according to claim 5, which is characterized in that the material of the dielectric layer is SiO2Or
Si3N4, with a thickness of 200nm-500nm.
7. microwave power detector according to claim 5, which is characterized in that the measuring unit further includes relative to institute
State symmetrically arranged first metal block of graphene film and second metal block.
8. microwave power detector according to claim 7, which is characterized in that the position of the graphene film with it is described
The position of co-planar waveguide signal wire is corresponding, the position phase of the position of first metal block and the first co-planar waveguide ground wire
Corresponding, the position of second metal block is corresponding with the position of the second co-planar waveguide ground wire.
9. microwave power detector according to claim 1, which is characterized in that the shape of the graphene film is square
Shape, the length range of the rectangle are 20um-100um, width range 200um-1000um, thickness range 0.2nm-1nm.
10. a kind of microwave power measurement method, using the microwave power detector as described in any one of claim 1-9,
Include the following steps:
S1, the resistance of the graphene film is adjusted to by initial value by driving electrodes application regulation voltage；
S2, microwave signal is inputted, the microwave signal on the co-planar waveguide signal wire can generate loss on the absorption resistance
Cause the absorption resistance temperature to increase, is placed on the graphene film near the absorption resistance and incudes the absorption electricity
The temperature of resistance increases and reduces the resistance value of the graphene film；
It is described first that the regulation voltage that S3, change are applied in the driving electrodes is returned to the resistance value of the graphene film
Initial value is to realize the microwave power measurement of the microwave signal.
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| CN112098728A (en) * | 2020-09-17 | 2020-12-18 | 东南大学 | Irregular thin film resistance test structure and method based on transmission and reflection mechanism |
| CN112098728B (en) * | 2020-09-17 | 2023-08-11 | 东南大学 | Irregular thin film resistor test structure and method based on transmission and reflection mechanism |
| CN112433082A (en) * | 2020-10-30 | 2021-03-02 | 国网山东省电力公司青岛供电公司 | Optical fiber voltage measuring system and method |
| CN114813846A (en) * | 2022-04-14 | 2022-07-29 | 南京高华科技股份有限公司 | Humidity sensor |
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