CN108279330B - Cantilever beam-based d33 piezoelectric microwave power sensor - Google Patents
Cantilever beam-based d33 piezoelectric microwave power sensor Download PDFInfo
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- CN108279330B CN108279330B CN201810387917.XA CN201810387917A CN108279330B CN 108279330 B CN108279330 B CN 108279330B CN 201810387917 A CN201810387917 A CN 201810387917A CN 108279330 B CN108279330 B CN 108279330B
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
Abstract
The invention relates to a piezoelectric microwave power sensor based on d33 of a cantilever beam, which comprises a high-resistance silicon substrate, wherein a coplanar waveguide transmission line and a piezoelectric cantilever beam are arranged on the substrate, the coplanar waveguide transmission line comprises a central signal line and a ground wire, the ground wire is arranged on two sides of the central signal line, the piezoelectric cantilever beam is fixed between the central signal line and the ground wire on one side through a bridge pier, one end of the piezoelectric cantilever beam is provided with a mass block, a dielectric layer is attached on the piezoelectric cantilever beam and above the unloaded mass block, a piezoelectric material layer is arranged above the dielectric layer, and an interdigital electrode is arranged at the top end of the piezoelectric material layer. When the device works, the cantilever beam is pulled down by electrostatic force, and according to the piezoelectric effect, voltage is generated between the interdigital electrodes above the piezoelectric cantilever beam, and the voltage corresponds to microwave power one by one, so that the power of a microwave signal can be obtained by measuring the voltage. The invention is easy to integrate, the measured parameter is directly output in the form of an electric signal, and the post-stage detection circuit is simple.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a d33 piezoelectric microwave power sensor based on a cantilever beam.
Background
In the microwave investigation of microelectromechanical systems (MEMS), microwave power is an important parameter characterizing microwave signals. In the research of each link of generation, transmission and reception of microwave signals, detection of microwave power is indispensable. The most common microwave power detector is a capacitive microwave power sensor based on a cantilever structure, such as a multi-cantilever structure microwave power sensor (patent number: 201310184504.9), a MEMS cantilever type online microwave power sensor and a preparation method thereof (patent number: 201010223806.9). One end of the cantilever beam is fixed, when microwave signals are transmitted from the coplanar waveguide, electrostatic force is generated between the coplanar waveguide and the cantilever beam, the other end of the cantilever beam is pulled down, and the capacitance value between the cantilever beam and the test electrode is changed, so that microwave power measurement is performed. However, the output of the capacitive microwave power sensor has nonlinearity, the influence of parasitic capacitance and distributed capacitance on sensitivity and measurement accuracy is large, and a connection circuit is complex.
Disclosure of Invention
The invention provides a d33 piezoelectric type microwave power sensor based on a cantilever beam, which utilizes the piezoelectric effect to generate an electric signal corresponding to microwave power one by one so as to measure, has the characteristics of wider electric energy output range, simple structure, direct measurement and the like, solves the problems and greatly improves the sensitivity.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
the invention relates to a piezoelectric microwave power sensor based on d33 of a cantilever beam, which comprises a high-resistance silicon substrate, wherein a coplanar waveguide transmission line and a piezoelectric cantilever beam are arranged on the high-resistance silicon substrate, the coplanar waveguide transmission line comprises a central signal line and a ground wire, the ground wire is arranged on two sides of the central signal line, the piezoelectric cantilever beam is fixed between the central signal line and the ground wire on one side through a bridge pier, one end of the piezoelectric cantilever beam is provided with a mass block, a dielectric layer is attached on the piezoelectric cantilever beam and above the unloaded mass block, a piezoelectric material layer is arranged above the dielectric layer, an interdigital electrode is arranged at the top end of the piezoelectric material layer, when microwave signals are transmitted through the coplanar waveguide, the piezoelectric cantilever beam is pulled down by electrostatic force, the piezoelectric material layer deforms accordingly, the distribution of charges on the piezoelectric material layer changes according to the piezoelectric effect, voltage corresponding to the microwave power one by one is generated, and the detection of the microwave power is carried out through detection voltage.
The invention further improves that: the piezoelectric cantilever beam is made of copper, aluminum or titanium.
The invention further improves that: the bridge pier is made of polysilicon, aluminum, copper, tungsten or titanium.
The invention further improves that: the mass block is made of nickel, cobalt, aluminum or copper.
The invention further improves that: the dielectric layer is ZrO 2 、SiO 2 、Si 3 N 4 Or a dielectric layer made of mica.
The invention further improves that: the piezoelectric material layer is made of ZnO, PZT-5 series or AlN.
The invention further improves that: the interdigital electrode is made of platinum, gold, copper, titanium or aluminum.
The beneficial effects of the invention are as follows: (1) The invention adopts a cantilever structure, and has the advantages of low structural rigidity, simple structure, large open-circuit voltage, easy realization by micro-machining and the like; (2) The invention realizes cantilever beam displacement-electric signal conversion by utilizing the piezoelectric effect, and the actual measurement parameters are directly output by the electric signal, so that the invention can directly measure and reduce the complexity of a conversion circuit; (3) The piezoelectric microwave power sensor works in a d33 mode, and converts stress generated by beam displacement change into an electric signal by utilizing a piezoelectric effect, so that the piezoelectric microwave power sensor has higher output voltage and higher measurement precision; (4) The invention adopts the metal blocks with larger density to be placed at the tail end of the cantilever beam, which is used for increasing the displacement amplitude of the cantilever beam and reducing the resonance frequency.
The invention is based on MEMS technology, has the basic advantages of MEMS, such as small volume, light weight, low power consumption, convenient integration, etc., and the series of advantages are incomparable with the traditional microwave power detector, so that the invention has good research and application values.
The microwave power sensor has the advantages of novel structure, easiness in integration, direct output of measured parameters in an electric signal form, simplicity in a post-stage detection circuit and the like.
Drawings
Fig. 1 is a drawing of the present invention.
Fig. 2 is a side view of the present invention.
Fig. 3 is a top view of a piezoelectric cantilever of the present invention.
Fig. 4 is a partial side cross-sectional view of a piezoelectric cantilever of the present invention.
Wherein: 1-a central signal line; 2-ground wire; 3 mass blocks; 4-a piezoelectric cantilever; 5-a dielectric layer; 6-interdigital electrodes; 7-a layer of piezoelectric material.
Detailed Description
The present invention will be further described in detail with reference to the drawings and examples, which are only for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1-4, the piezoelectric microwave power sensor based on d33 of the cantilever beam has the advantages of higher output voltage, high sensitivity, simple structure, easy integration and the like compared with the traditional sensor, the sensor comprises a high-resistance silicon substrate, a coplanar waveguide transmission line and a piezoelectric cantilever beam 4 are arranged on the high-resistance silicon substrate, the coplanar waveguide transmission line comprises a central signal line 1 and a ground line 2, the ground line 2 is arranged on two sides of the central signal line 1, the piezoelectric cantilever beam 4 is fixed between the central signal line 1 and the ground line 2 on one side through the ground line, one end of the piezoelectric cantilever beam 4 is loaded with a mass block 3, a dielectric layer 5 is attached above the mass block 3 on the piezoelectric cantilever beam 4, a piezoelectric material layer 7 is arranged above the dielectric layer 5, an interdigital electrode 6 is arranged at the top end of the piezoelectric material layer 7, when microwave signals are transmitted in a coplanar waveguide, the piezoelectric cantilever beam 4 is pulled down by electrostatic force, the piezoelectric cantilever beam 7 generates bridge pier, the piezoelectric cantilever beam generates voltage corresponding to the voltage distribution according to the microwave power distribution, and the voltage distribution of the piezoelectric cantilever beam is detected, and the microwave power distribution is changed by detecting the microwave power distribution. The piezoelectric cantilever beam 4 is made of copper, aluminum or titanium; the bridge pier is made of polysilicon, aluminum, copper, tungsten or titanium; the mass block 3 is made of nickel, cobalt, aluminum or copper and is used for reducing the resonance frequency and increasing the displacement of the cantilever beam; the dielectric layer 5 is ZrO 2 、SiO 2 、Si 3 N 4 Or a dielectric layer made of mica. The piezoelectric material layer is used for isolating the metal cantilever beam and the piezoelectric material layer; the piezoelectric material layer 7 is made of ZnO, PZT-5 series or AlN, and is used for generating positive piezoelectric effect under the action of external force in d33 mode, the piezoelectric material layer is used for receiving charges generated by the piezoelectric effect in d33 mode, and the dielectric layer serves as a layer by layerThe insulating layer can block charge leakage generated by the piezoelectric layer; the interdigital electrode 6 is an interdigital electrode made of platinum, gold, copper, titanium or aluminum and is used for collecting charges generated by positive piezoelectric effect.
The working principle of the invention is as follows: when microwave signals are transmitted on the CPW, the piezoelectric cantilever beam above the central signal line can generate electrostatic force, so that the piezoelectric cantilever beam generates displacement, the surface of the piezoelectric cantilever beam generates stress change, the piezoelectric material generates charge flow according to the piezoelectric effect, and the interdigital electrode above the piezoelectric cantilever beam generates voltage which corresponds to microwave power one by one, and therefore, the power of the microwave signals can be obtained by measuring the voltage.
The piezoelectric material of the sensor adopts d33 polarization, namely the interdigital electrode is used for receiving charges generated by the piezoelectric effect, and the polarization direction of the charges is perpendicular to the stress direction of the clamped beam.
In order to further increase the value of the output voltage and thus further increase the detection accuracy, the invention needs to generate enough mechanical stress and strain to be converted into electric energy during operation, and therefore, a certain weight of nickel mass block is loaded through the tail end of the cantilever beam.
Claims (5)
1. The utility model provides a piezoelectric type microwave power sensor based on d33 of cantilever beam which characterized in that: the sensor comprises a high-resistance silicon substrate, wherein a coplanar waveguide transmission line and a piezoelectric cantilever beam (4) are arranged on the high-resistance silicon substrate, the coplanar waveguide transmission line comprises a central signal line (1) and a ground wire (2), the ground wire (2) is arranged on two sides of the central signal line (1), the piezoelectric cantilever beam (4) is fixed between the central signal line (1) and one side of the ground wire (2) through a bridge pier, one end of the piezoelectric cantilever beam (4) is loaded with a mass block (3), a dielectric layer (5) is attached to the upper side of the mass block (3) on the piezoelectric cantilever beam (4), a piezoelectric material layer (7) is arranged above the dielectric layer (5), an interdigital electrode (6) is arranged on the top of the piezoelectric material layer (7), when a microwave signal is transmitted in the coplanar waveguide, the piezoelectric cantilever beam (4) is pulled down by an electrostatic force, the piezoelectric material layer (7) deforms along with the electrostatic force, the piezoelectric cantilever beam changes according to the piezoelectric effect, the distribution of charges on the piezoelectric material layer (7) and the piezoelectric cantilever beam is subjected to one-to-one voltage detection, and the voltage corresponding to the microwave power is detected by the bridge pier, and the piezoelectric cantilever beam is made of copper, the bridge pier, the titanium cantilever beam or the titanium cantilever beam is made from the titanium.
2. The cantilever-based d33 piezoelectric microwave power sensor of claim 1, wherein: the mass block (3) is made of nickel, cobalt, aluminum or copper.
3. The cantilever-based d33 piezoelectric microwave power sensor of claim 1, wherein: the dielectric layer (5) is ZrO 2 、SiO 2 、Si 3 N 4 Or a dielectric layer made of mica.
4. The cantilever-based d33 piezoelectric microwave power sensor of claim 1, wherein: the piezoelectric material layer (7) is made of ZnO, PZT-5 series or AlN.
5. The cantilever-based d33 piezoelectric microwave power sensor of claim 1, wherein: the interdigital electrode (6) is made of platinum, gold, copper, titanium or aluminum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810387917.XA CN108279330B (en) | 2018-04-26 | 2018-04-26 | Cantilever beam-based d33 piezoelectric microwave power sensor |
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| CN201810387917.XA CN108279330B (en) | 2018-04-26 | 2018-04-26 | Cantilever beam-based d33 piezoelectric microwave power sensor |
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| CN108279330B true CN108279330B (en) | 2023-09-19 |
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| CN109883534B (en) * | 2019-01-25 | 2021-08-27 | 北京航天计量测试技术研究所 | Micro-vibration sensor based on microwave interference and sensing method |
| CN109932561B (en) * | 2019-03-27 | 2021-02-12 | 南京邮电大学 | Microwave power sensor based on composite arched beam |
Citations (5)
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| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| RU2451942C1 (en) * | 2011-01-11 | 2012-05-27 | Государственное образовательное учреждение высшего профессионального образования Новгородский государственный университет имени Ярослава Мудрого | Selective detector of microwave power |
| CN103177904A (en) * | 2013-03-01 | 2013-06-26 | 清华大学 | Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof |
| CN208043929U (en) * | 2018-04-26 | 2018-11-02 | 南京邮电大学 | The piezoelectric type microwave power detector of d33 based on cantilever beam |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| RU2451942C1 (en) * | 2011-01-11 | 2012-05-27 | Государственное образовательное учреждение высшего профессионального образования Новгородский государственный университет имени Ярослава Мудрого | Selective detector of microwave power |
| CN103177904A (en) * | 2013-03-01 | 2013-06-26 | 清华大学 | Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof |
| CN208043929U (en) * | 2018-04-26 | 2018-11-02 | 南京邮电大学 | The piezoelectric type microwave power detector of d33 based on cantilever beam |
Non-Patent Citations (2)
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| 沈修成 等."基于MEMS的压电微能量采集器的电路研究与测试".《传感技术学报》.2008,第第21卷卷(第第4期期),第692-694页. * |
| 谌贵辉,张万里,彭斌,蒋洪川,赵泽宇.串并联RF MEMS开关的微波传输特性仿真研究.微纳电子技术.2005,(第04期),第172-179页. * |
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