CN109212328A - High-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect - Google Patents
High-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect Download PDFInfo
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Abstract
A kind of high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect, including piezoelectric thin film layer, upper electrode layer is attached with below the piezoelectric thin film layer, the upper electrode layer is realized by supporting layer and is supported, the lower section of the upper electrode layer is equipped with fixed reference layer, the fixed reference layer is electrically connected with impedance detection device, and the upper electrode layer is electrically connected by electrode guide post with impedance detection device.The beneficial effect is that: there is biggish electric field measurement range, higher response and sensitivity, and the regulatable linearity, in addition to the real time monitoring of industrial production large electric appliances equipment, additionally it is possible to meet the demands such as Power System Steady-state operational monitoring and the identification of overvoltage fault transient signals.
Description
Technical field
The present invention relates to advanced manufactures and high-performance intelligent instrumentation-novel sensor field in automation, especially
It is a kind of high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect.
Background technique
Sensor is the important foundation of modern intelligent industrial development, is widely used in industrial production, hydrospace detection, aviation boat
The numerous areas such as it play a crucial role realization industrial production intelligence.Particularly, the principle of sensor is miniaturized
Considerable research and industrial application is obtained with technology, many kinds of, main includes industrial current sensor, capacitance touch biography
Sensor, magnetic sensor etc..These diversified microsensors are realized to system-level node in complicated production and living
Real time monitoring and fault pre-alarming.
But the intellectual property that sensor China does not have core technology still is partially miniaturized in existing market, especially
Sensor with larger technical difficulty, such as the micro field sensor of high-precision high field intensity.High-precision high field intensity miniature electric field
Demand sensor is big, meaning weight, can be applied to Transmission Network of Power System, industrial precision instrument and equipment, aerospace prison
Examining system, military radar system etc..
Traditional electric-field sensor has that volume is big, at high cost, installation hardly possible, and its electric field intensity measuremenrt range
Relatively narrow, frequency range is limited, monitors only for the steady-state operation in general electrical equipment, and be unfavorable for high density network node
Sensing arrangement.
Integrated optical electric field sensor technology is more mature, in entering part industrial production link.Photoelectric sensor
Based on the good linear photoconductor effect of photoelectric material such as lithium niobate, lithium tantalate, optical power change is converted by electric field strength.At present
The electric field strength range of dynamic measurement of the most advanced research achievement of photoelectric sensor is kV/m-kV/cm magnitude, and frequency range is
10Hz-GHz, has many advantages, such as response linearity height, and space electric field distortion is small.But photoelectric material pyroelectric itself is brought
Device temperature stability it is poor the problems such as, it is generally existing in current photoelectric sensor, have huge challenge.In addition, light
The problems such as there is also total system complicated difficults for electric transducer to be miniaturized, at high cost.
Electric-field sensor using MEMS (MEMS) technological invention is a kind of micromation sensor, certain applications
In the electric field monitoring of atmospheric environment.MEMS electric-field sensor makes micro-machined interdigital electricity in the way of electric drive or thermal drivers
Pole vibrates under the electric field, pushes away electric field value by the way that the situation of change of charge inducing in measuring electrode is counter.The advantages of sensor is body
Product is small, light weight and cost is low, is adapted to large-scale serial production.The disadvantage is that measurement range is limited, the low electricity of power grid can be only applied to
It presses the normal electric field measurement under grade and output response signal is small, Measurement Resolution is lower.Therefore, it is necessary to study novel electric field
Sensor mechanism is more widely used in the transient process measurement of wideband with having the measuring characteristic of high-precision high field intensity.
Summary of the invention
It is an object of the present invention to:
A kind of high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect is proposed, by electricity
The purpose of measurement electric field is realized in the measurement of appearance.
In order to achieve the above-mentioned object of the invention, mentality of designing of the invention are as follows:
The continuous development of basic material in recent years, makes the piezoelectric modulus of piezoelectric material obtain huge promotion, hysteresis
Energy regulating force is strong, and the thermal stability of material improves, and is applicable in higher frequency range, and processing technology gradually optimizes with cost.
Polarization and volume deformation can occur under electric field action for piezoelectric material, if this deformation can be measured with micro sensor devices,
The anti-size for pushing away electric field can then be passed through.Capacitance type pressure test cell is a kind of high-precision pressure strain measurement unit, benefit
Air capacitance is caused to change with film bending deformation, measuring capacitance by integration unit counter can push away film pressure or shape
Become.Its advantage is that high sensitivity, the linearity is high, and range is big, bandwidth, integrated level height etc..
Therefore, the coupling of piezoelectric effect and condenser type distortion measurement structure is to realize that wide range, high-precision, wideband are rung
Effective mechanism of micro field sensor is expected to be applied to the measurement of electromagnetic transient in complex environment and complication system.
Based on above-mentioned mentality of designing, a kind of high-precision high field intensity capacitance type minitype electric field survey based on piezoelectric effect is devised
Quantity sensor part.Specific design scheme are as follows:
A kind of high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect, including piezoelectric membrane
Layer, upper electrode layer is attached with below the piezoelectric thin film layer, the upper electrode layer realizes that surrounding is fixed by supporting layer, described
The lower section of upper electrode layer is equipped with fixed reference layer, and the fixed reference layer is electrically connected with impedance detection device, the upper electrode layer
It is electrically connected by electrode guide post with impedance detection device.
The top surface of the fixed reference layer is equipped with insulating layer, is empty between the top of the insulating layer and the electrode layer
Chamber, the insulating layer and the fixed reference bed boundary adhere to form lower electrode layer.
The supporting layer is surrounding support, and positioned at the bottom surface surrounding of the piezoelectric thin film layer, the reference layer is located at described
It between supporting layer, is fixed by supporting layer surrounding, the electrode guide post is from the top down in the partial penetration of the supporting layer.
The insulating layer effect is that bottom crown is prevented to be connected,
The cavity sealing is that the medium of capacitor, air pressure and gas type can be adjusted on demand when device is bonded,
The supporting layer is located at the surrounding of bottom crown on capacitor, for fixing piezoelectric thin film layer and upper electrode layer, to protect
The free vibration of chamber portion upper electrode layer is demonstrate,proved,
The electrode guide post is electrically connected in the supporting layer with the upper electrode layer, realizes that device is empty
The absolute pressure of chamber seals,
Two input terminals of impedance measurement device electrode guide post and fixed reference layer with device bottom surface respectively
It is connected.
The high-precision high field intensity capacitance type minitype electricity based on piezoelectric effect that above-mentioned technical proposal through the invention obtains
Field measurement senser element, the beneficial effect is that:
Using telescopic deformation (i.e. piezoelectric effect) of the piezoelectric thin film layer under electric field action, film surrounding is fixed, will be stretched
Deformation is converted into extruding bending deformation, piezoelectric response is exaggerated indirectly from principle, to improve device to electric field measurement
High-resolution and high-precision.
Based on the measuring principle of micro capacitance structure, change the contact of capacitor upper/lower electrode film by piezoelectric membrane deformation
Area and distance, therefore the advantages such as high linearity, high sensitivity with capacitance type minitype distortion measurement unit.In addition, this hair
Bright device operational process can charge progress without intrusion, the installation of device and maintenance process to primary system.
The piezoelectric membrane breakdown strength used is high, the range of linearity is wide, therefore device can be used for the electric field measurement of high field intensity.Together
When, the frequency response of piezoelectric membrane and capacitance structure has the characteristics that broadband, therefore device is suitable for the electric field measurement of wideband.This
Outside, device material therefor and capacitance structure have the characteristics that temperature stability, therefore have good robust for complex environment
Property.
Measurement method be it is contactless therefore low for the insulating requirements of device architecture and material, can be by back-end circuit collection
At on senser element, therefore entire device size is small, at low cost, small power consumption, is convenient for mass production.
The design of electrode guide post ensure that the absolute pressure feature of capacitor cavity, therefore can be bonded and be processed by adjusting means
When ambient pressure the quiescent point of device is set, i.e., when static the contact area of upper electrode layer and lower electrode layer and away from
From ensure that the linearity and accuracy of device measurement with this, and be conducive to the precise measurement of low field intensity.
Detailed description of the invention
Fig. 1 is the high-precision high field intensity capacitance type minitype electric field measurement senser element of the present invention based on piezoelectric effect
Structural schematic diagram；
In figure, 1, piezoelectric thin film layer；2, upper electrode layer；3, fixed reference layer；4, electrode guide post；5, cavity；6, it insulate
Layer；7, supporting layer；8, impedance measurement device.
Specific embodiment
The present invention is specifically described with reference to the accompanying drawing.
The high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect proposed is invented, according to micro-
The feasibility of preparation is processed, individual devices size minimum is up to micron dimension.Sol-gal process can be selected in piezoelectric membrane wherein
The organic piezoelectric film of lead zirconate titanate PZT inorganic piezoelectric film or PVDF and the multi-element doping copolymerization of preparation.In order to guarantee to press
The deformation of conductive film and the good coupling contact of upper electrode layer and high sensitivity, piezoelectric membrane thickness are micro- to tens with several microns
Rice is best.
Upper electrode layer is the semiconductor silicon of common high-concentration dopant or middle doped in concentrations profiled, and resistivity has not a particular requirement,
With general electric conductivity, the thickness degree and piezoelectric membrane thickness matching, are best at several microns to tens microns.Piezoelectricity
Film layer and upper electrode layer interface are laminated, and piezoelectric thin film layer is directly grown and prepared on upper electrode layer.
Bottom crown of the fixed reference layer as capacitor, material requirements is as top electrode, the difference is that with a thickness of hundred microns
Magnitude, i.e., common Silicon Wafer thickness；Insulating layer on bottom crown is generally silica, and tens nanometers of thickness are arrived several hundred nanometers,
Play insulating effect.
The material requirements of electrode guide post and top electrode are also identical, and pillar is cylindrical or cube, lateral dimension
Generally at tens microns, electrode guide post runs through entire supporting layer.Supporting layer selects insulating materials, and such as glass facilitates fixed ginseng
Examine the processing of layer and electrode guide post and being bonded for supporting layer and upper electrode layer.
The shape of cavity with cube and cylindrical body be it is more, the planar dimension of fixed reference layer will match always with cavity,
The thickness of cavity is generally several microns, is total to by the factors such as ambient pressure and static point setting requirements when cavity plane side length, sealing
With decision.
Impedance measurement device can choose the data processing module being made of charge amplifier, capacitance measurement chip etc., or
Person's HP4294 dielectric chromatograph devices.
The factors such as ambient pressure when capacitor upper electrode layer original state and cavity thickness, cavity plane side length and device sealing
It is related.When ambient pressure when device sealing is higher than the atmospheric pressure of measurement environment, draught head causes capacitor upper electrode layer initial
State is to outwardly protrude；When ambient pressure when device sealing is equal to the atmospheric pressure of measurement environment, capacitor upper electrode layer is initial
State is to be parallel to fixed reference layer；When ambient pressure when device sealing is lower than the atmospheric pressure of measurement environment, draught head is led
Send a telegraph that hold upper electrode layer original state be to be recessed inwardly, upper electrode layer can and not in contact with fixed reference layer, or be exactly in contact with
But without active force, or contacts and be bonded completely in the central area of certain size.Different capacitor upper electrode layer initial shapes
State determines the quiescent point of device.
Embodiment 1
As shown in Figure 1, it is assumed that cavity is cylinder, and upper electrode layer is exactly in contact with lower electrode and two when setting original state
No pressure between layer.If bottom crown radius is a on capacitor, pole plate parallel spacing is t.?In cylindrical coordinate, coordinate is former
Point O is located at the center of insulating layer upper surface.If electric field E to be measured is along the z-axis direction, electric field makes to stretch in capacitor upper electrode layer generating surface
Deformation, since surrounding is fixed, film integrally bends deformation, and on the basis of original state, film presses to lower electrode layer, with field strength
Increase, upper/lower electrode layer contact area increases, and capacitor further increases.
The deformation that piezoelectric membrane generates under electric field E effect is equivalent to deformation of the film under uniform load P effect, and
Uniform load P and electric field strength E meet linear relationship, i.e.,
P=erE (1)
Wherein, erFor axial piezoelectric modulus.It is analyzed by the stress and equalising torque of piezoelectric thin film layer, obtains piezoelectric membrane
Expression formula of the relationship of deformation and suffered uniform load in r--z cylindrical coordinates are as follows:
Wherein W is film deformation, and a is top crown radius, and P is suffered uniform load value on film, and D is film bending stiffness, Y
For the Young's modulus of material, h is film thickness, and V is Poisson's ratio.Upper/lower electrode layer is exactly in contact with when due to original state, when applying
When adding z-axis direction electric field E, bottom crown contact portion radius R on capacitor0Are as follows:
So total capacitance value is the sum of cavity capacitor and contact portion capacitor between upper bottom crown, it may be assumed that
Wherein, ε0=8.85 × 10-12F/m is permittivity of vacuum, εrAnd h1The respectively opposite dielectric of insulating layer material
Constant and thickness.The theoretical calibration curves of sensing device measurements are obtained according to above-mentioned capacitor expression formula.
PMN-28%PT is used to carry out theoretical calculation as one example as piezoelectric material.Parameter is as follows: piezoelectric membrane is selected thick
H=10 μm of degree, Young's modulus Y=1.5 × 1011N/m of the polarized PMN-28%PT piezoelectric material of 001 > of <2, Poisson's ratio v=
0.278, obtain film bending stiffness D=7.1 × 10-6Nm, piezoelectric modulus er=21.72C/m2, piezoelectric material film radius a=
200 μm, t=2 μm of cavity height, the relative dielectric constant of insulating layer silica is εr=3.9, thickness of insulating layer h1=100nm.
When piezoelectric membrane bears the electric field of 0-16.0kV/m, capacitance is calculated by formula (4), capacitor can be by linear bent with electric field change
Line C (pF)=6.205 × 10-4E+0.6455 least square fitting obtains, in the field regime of 0-16.0kV/m, the phase of fitting
Close coefficients R2=0.9913, sensitivity dC/dE=6.205 × 10 of the capacitance measurement to electric field-4pF/(V/m).Above example proves
Apparatus of the present invention sensitivity with higher and accuracy.
Inventive sensor part utilizes the inverse piezoelectric effect of piezoelectric material, and piezoelectric membrane is generated in face under the electric field and stretched,
And then it is converted into the variation of bending deformation and capacitance.The device electric fields measurement range is big, has very high response and measurement
Sensitivity, can satisfy Lightning Over-voltage in power grid, under switching overvoltage state electric field measurement.In addition, apparatus of the present invention temperature
Degree stability is good, and at low cost, integration degree is high, has very extensive use scope.
Above-mentioned technical proposal only embodies the optimal technical scheme of technical solution of the present invention, those skilled in the art
The principle of the present invention is embodied to some variations that some of them part may be made, belongs to the scope of protection of the present invention it
It is interior.
Claims (3)
1. a kind of high-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect, which is characterized in that packet
It includes piezoelectric thin film layer (1), is attached with upper electrode layer (2) below the piezoelectric thin film layer (1), the upper electrode layer (2) passes through
Supporting layer (7) realizes that surrounding is fixed, and the lower section of the upper electrode layer (2) is equipped with fixed reference layer (3), the fixed reference layer
(3) it is electrically connected with impedance detection device (8), the upper electrode layer (2) passes through electrode guide post (4) and impedance detection device (8)
Electrical connection.
2. the high-precision high field intensity capacitance type minitype electric field measurement sensor according to claim 1 based on piezoelectric effect
Part, which is characterized in that the top surface of the fixed reference layer (3) be equipped with insulating layer (6), the top of the insulating layer (6) with it is described
It is cavity (5) that the insulating layer (6) and fixed reference layer (3) Interface Adhesion form lower electrode layer between electrode layer (2).
3. the high-precision high field intensity capacitance type minitype electric field measurement sensor according to claim 1 based on piezoelectric effect
Part, which is characterized in that the supporting layer (7) is surrounding support, is located at the surrounding of the piezoelectric thin film layer (1), the reference layer
(3) it between the supporting layer (7), is fixed by supporting layer surrounding, the electrode guide post (4) is from the top down in the support
The regional area of layer (7) runs through.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110775938A (en) * | 2019-10-14 | 2020-02-11 | 清华大学 | Manufacturing process flow of capacitance-cantilever beam type electric field measurement sensor |
| CN111017861A (en) * | 2019-10-14 | 2020-04-17 | 清华大学 | Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect |
| CN112415288A (en) * | 2020-10-22 | 2021-02-26 | 同济大学 | System and method for measuring hydrostatic pressure piezoelectric coefficient of coaxial piezoelectric cable |
| CN113125865A (en) * | 2021-04-09 | 2021-07-16 | 中国科学院空天信息创新研究院 | Vibration capacitance type miniature electric field sensor, preparation method thereof and electric field sensor |
| CN113406404A (en) * | 2021-05-31 | 2021-09-17 | 清华大学深圳国际研究生院 | Electric field strength measuring method based on semiconductor device |
| CN113640591A (en) * | 2021-09-07 | 2021-11-12 | 清华大学 | Differential type micro electric field sensing device based on piezoelectric film deformation |
| CN113960381A (en) * | 2021-10-25 | 2022-01-21 | 南方电网科学研究院有限责任公司 | Non-contact electric field measuring sensor |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1138902A1 (en) * | 2000-04-01 | 2001-10-04 | Robert Bosch GmbH | Method and apparatus for timed measurement of the voltage across a device in the charging circuit of a piezoelectric element |
| JP2002022561A (en) * | 2000-07-06 | 2002-01-23 | Matsushita Electric Ind Co Ltd | Flexible piezoelectric element |
| JP2006201006A (en) * | 2005-01-20 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Transfer impedance evaluation method for piezoelectric thin film |
| JP2008044304A (en) * | 2006-08-21 | 2008-02-28 | Fuji Xerox Co Ltd | Amperometry circuit of capacitive element, and failure detection device of piezoelectric head |
| US20090302716A1 (en) * | 2008-06-10 | 2009-12-10 | Kabushiki Kaisha Toshiba | Piezoelectric device |
| CN201859032U (en) * | 2010-10-15 | 2011-06-08 | 浙江苏泊尔家电制造有限公司 | Capacitance pressure sensor and electric pressure cooker equipped with the capacitance pressure sensor |
| CN102589760A (en) * | 2012-02-27 | 2012-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Minitype capacitance-type mechanical sensor and preparation method thereof |
| CN102798403A (en) * | 2012-08-21 | 2012-11-28 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN203365045U (en) * | 2013-07-16 | 2013-12-25 | 东南大学 | Capacitive air pressure sensor of microelectronic mechanical system |
| CN103713203A (en) * | 2013-12-19 | 2014-04-09 | 清华大学 | Miniature electric field sensor structure |
| CN104267266A (en) * | 2014-09-23 | 2015-01-07 | 清华大学 | Electric field measurement sensing device based on piezoelectric buckling effect |
| CN104515640A (en) * | 2013-10-08 | 2015-04-15 | 无锡华润上华半导体有限公司 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
-
2018
- 2018-10-24 CN CN201811243890.3A patent/CN109212328A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1138902A1 (en) * | 2000-04-01 | 2001-10-04 | Robert Bosch GmbH | Method and apparatus for timed measurement of the voltage across a device in the charging circuit of a piezoelectric element |
| JP2002022561A (en) * | 2000-07-06 | 2002-01-23 | Matsushita Electric Ind Co Ltd | Flexible piezoelectric element |
| JP2006201006A (en) * | 2005-01-20 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Transfer impedance evaluation method for piezoelectric thin film |
| JP2008044304A (en) * | 2006-08-21 | 2008-02-28 | Fuji Xerox Co Ltd | Amperometry circuit of capacitive element, and failure detection device of piezoelectric head |
| US20090302716A1 (en) * | 2008-06-10 | 2009-12-10 | Kabushiki Kaisha Toshiba | Piezoelectric device |
| CN201859032U (en) * | 2010-10-15 | 2011-06-08 | 浙江苏泊尔家电制造有限公司 | Capacitance pressure sensor and electric pressure cooker equipped with the capacitance pressure sensor |
| CN102589760A (en) * | 2012-02-27 | 2012-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Minitype capacitance-type mechanical sensor and preparation method thereof |
| CN102798403A (en) * | 2012-08-21 | 2012-11-28 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN203365045U (en) * | 2013-07-16 | 2013-12-25 | 东南大学 | Capacitive air pressure sensor of microelectronic mechanical system |
| CN104515640A (en) * | 2013-10-08 | 2015-04-15 | 无锡华润上华半导体有限公司 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
| CN103713203A (en) * | 2013-12-19 | 2014-04-09 | 清华大学 | Miniature electric field sensor structure |
| CN104267266A (en) * | 2014-09-23 | 2015-01-07 | 清华大学 | Electric field measurement sensing device based on piezoelectric buckling effect |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110775938A (en) * | 2019-10-14 | 2020-02-11 | 清华大学 | Manufacturing process flow of capacitance-cantilever beam type electric field measurement sensor |
| CN111017861A (en) * | 2019-10-14 | 2020-04-17 | 清华大学 | Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect |
| CN112415288A (en) * | 2020-10-22 | 2021-02-26 | 同济大学 | System and method for measuring hydrostatic pressure piezoelectric coefficient of coaxial piezoelectric cable |
| CN112415288B (en) * | 2020-10-22 | 2022-08-05 | 同济大学 | Measuring method of system for measuring hydrostatic pressure piezoelectric coefficient of coaxial piezoelectric cable |
| CN113125865A (en) * | 2021-04-09 | 2021-07-16 | 中国科学院空天信息创新研究院 | Vibration capacitance type miniature electric field sensor, preparation method thereof and electric field sensor |
| CN113406404A (en) * | 2021-05-31 | 2021-09-17 | 清华大学深圳国际研究生院 | Electric field strength measuring method based on semiconductor device |
| CN113406404B (en) * | 2021-05-31 | 2023-08-01 | 清华大学深圳国际研究生院 | Electric field intensity measuring method based on semiconductor device |
| CN113640591A (en) * | 2021-09-07 | 2021-11-12 | 清华大学 | Differential type micro electric field sensing device based on piezoelectric film deformation |
| CN113640591B (en) * | 2021-09-07 | 2022-04-29 | 清华大学 | Differential type micro electric field sensing device based on piezoelectric film deformation |
| CN113960381A (en) * | 2021-10-25 | 2022-01-21 | 南方电网科学研究院有限责任公司 | Non-contact electric field measuring sensor |
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Application publication date: 20190115 |
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| RJ01 | Rejection of invention patent application after publication |