CN114113812B - Cantilever type micro electric field sensor driven by electric field force - Google Patents
Cantilever type micro electric field sensor driven by electric field force Download PDFInfo
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- CN114113812B CN114113812B CN202111393023.XA CN202111393023A CN114113812B CN 114113812 B CN114113812 B CN 114113812B CN 202111393023 A CN202111393023 A CN 202111393023A CN 114113812 B CN114113812 B CN 114113812B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
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Abstract
The invention discloses a cantilever type micro electric field sensor driven by electric field force, belonging to the technical field of electric field sensing. The sensor comprises a fixed area, a cantilever, a metal electrode, a cavity, a piezoresistive material and a routing area; one end of the cantilever is fixed on the fixed area, and the other end of the cantilever is provided with a metal electrode; a cavity is arranged around the cantilever to ensure the free vibration of the cantilever; the piezoresistive material is arranged at the joint of the fixed area and the cantilever and is connected with an external test unit through the routing area; the routing area is arranged on the fixing area and is connected with the metal electrode and the piezoresistive material through a metal wire. The sensor designed by the invention has the advantages of small volume, low cost, easy mass production, high resolution, high sensitivity, high linearity, wide measurement range and good frequency response.
Description
Technical Field
The invention relates to the technical field of electric field sensing, in particular to a cantilever type miniature electric field sensor driven by electric field force.
Background
With the development of smart grids and energy internet, intelligent monitoring of energy systems becomes a vital technology. For an electric power system, state monitoring and fault diagnosis of the system can be realized by monitoring physical quantities such as voltage, current and the like. At present, the measurement of high voltage is generally carried out by using a mutual inductor, the equipment has the defects of large volume, high cost and difficult maintenance, cannot meet the requirement of large-scale monitoring, and can only be used for key nodes such as a transformer substation bus and the like. According to the gaussian principle, the voltage value of one point can be inverted by measuring the electric field values of three points. Therefore, the non-contact measurement of the voltage can be realized through the electric field sensor, so that the number of sensing nodes is increased, and the cost of the sensor and an insulation structure is reduced.
In addition to being used for power system voltage measurement, electric field sensors have wide application in other fields. By arranging the electric field sensor inside the electrical equipment, such as an insulator, a transformer and the like, fault location and state monitoring of the equipment can be realized. Through set up electric field sensor on electric power workman's work clothes, can be used for workman's nearly electric early warning, promote operational environment's security. The electric field sensor can also be used for measuring an atmospheric electric field, so that the electric field sensor can be used for weather forecast, lightning early warning, space launch window selection and the like.
At present, the more mature micro electric field sensors include optical electric field sensors based on photoelectric effect and MEMS electric field sensors based on micro electro mechanical system. Among them, the optical sensor is often high in cost, the optical module is large in size, the temperature stability is low, and it is not suitable for large-scale arrangement of the sensor. The MEMS electric field sensor has high power consumption and narrow frequency band. Therefore, it is desirable to design a low cost, high resolution, wide frequency band electric field sensor for electric field measurement in power systems and other fields.
The invention provides a cantilever type miniature electric field sensor which is driven by electric field force, has small volume, low cost and high performance and can be simultaneously applied to measurement of an alternating current electric field and a direct current electric field.
Disclosure of Invention
The invention aims to provide an electric field force-driven cantilever type miniature electric field sensor which is characterized by comprising a fixed area, a cantilever, a metal electrode, a cavity, piezoresistive materials and a routing area, wherein the cantilever is arranged on the fixed area;
one end of the cantilever is fixed on the fixed area, and the other end of the cantilever is provided with a metal electrode; a cavity is arranged around the cantilever to ensure the free vibration of the cantilever; the piezoresistive material is arranged at the joint of the fixed area and the cantilever and is connected with an external test unit through the routing area; the routing area is arranged on the fixing area and is connected with the metal electrode and the piezoresistive material through a metal wire.
The fixed area is prepared by adopting a micro-processing technology based on a silicon wafer and is of a hollow structure; the size of the fixation area is between 1 mm and 10 mm.
The cantilevers are of a rectangular film structure, the number of the cantilevers is 4, and the cantilevers are arranged in a crossed central symmetry mode in the fixed area; the thickness of the cantilever is 5 to 50 microns.
The metal electrode is grounded or biased with a specific voltage.
When the metal electrode is biased by a specific voltage, the following two conditions are adopted: when measuring the direct current electric field, the metal electrode is biased by alternating current voltage; when the alternating current field measurement is carried out, the metal electrode is biased by direct current voltage.
The piezoresistive material is of a bent strip structure, the number of the piezoresistive material is 4, and the piezoresistive material is respectively connected by metal wires to form a four-bridge-arm Wheatstone bridge structure.
The piezoresistive material is obtained by carrying out ion doping and annealing on a semiconductor material, and the interface depth of the piezoresistive material is smaller than the thickness of the cantilever.
The input/output port and the metal electrode of the Wheatstone bridge are led out from the routing area and are connected with the back end circuit; the rear end circuit consists of two stages of amplifying circuits, namely a differential amplifying circuit and a phase-locked amplifying circuit.
The reference frequency of the phase-locked amplifying circuit is twice of the frequency of the electric field.
The invention has the beneficial effects that:
1. the sensor designed by the invention has the advantages of small volume, low cost and easiness in batch production, and meanwhile, the sensor has high resolution, high sensitivity, high linearity, wide measurement range and good frequency response, and can be suitable for large-scale node setting and most electric field measurement scenes in the ubiquitous power internet of things;
2. the designed sensing device can be used for measuring a direct current electric field and an alternating current electric field, and the back-end circuit selects double-frequency phase-locked amplification to effectively reduce electric field coupling interference of output signals;
3. the sensor structure adopts a cantilever structure, so that the sensor response can be effectively increased, and the sensor resolution is improved; the sensor is prepared by taking silicon as a material, so that the sensor can be prepared by utilizing a micro-processing technology, and a doped substrate is provided for the arrangement of piezoresistive materials; the cantilever deformation is converted into resistance change by using piezoresistive materials; the piezoresistive material is arranged into a Wheatstone bridge structure, so that the resistance change can be effectively measured, and the measurement precision is improved;
4. the designed sensor has high integration degree, and is easy to integrate with data processing, communication, I/O modules, energy-taking modules and the like to form a high-performance sensing node.
Drawings
FIG. 1 is a top view of the electric force driven cantilever-type miniature electric field sensor of the present invention;
in the figure: 1-a fixed region, 2-a cantilever, 3-a metal electrode, 4-a cavity, 5-a piezoresistive material and 6-a routing region;
FIG. 2 is a schematic perspective view of an electric field force driven cantilever-type micro-electric field sensor according to the present invention;
FIG. 3 is a schematic diagram of the displacement distribution of the cantilever-type electric field force sensor of the present invention;
FIG. 4 is a graph of magnitude response data for different parameter sensors of the electric field force driven cantilever-type micro-electric field sensor of the present invention;
FIG. 5 is a graph of frequency response data for different amplitudes for a cantilever-type miniature electric field sensor driven by an electric field force in accordance with the present invention.
Detailed Description
The invention provides an electric field force driven cantilever type miniature electric field sensor, which is further explained by combining the attached drawings and specific embodiments.
The design idea of the invention is as follows: when a conductor is placed in an electric field, internal charges migrate, thereby creating induced charges on the surface of the conductor. The induced charges are acted by the force of the electric field in the electric field, and the resultant force exerted on the conductor is zero because the induced charges on the surface of the conductor are opposite. When one end of the conductor is grounded, the induced charges of the ground surface are conducted away, and the conductor is subjected to the action of the resultant force of the non-zero electric field.
In an electric field, the grounding conductor is deformed under the action of the electric field force, so that the cantilever is driven to bend, and strain is generated on the cantilever. Wherein the cantilever is most strained near the fixed end. Therefore, the piezoresistive material at the fixed end of the cantilever changes its resistance value under strain. The piezoresistive material is connected by electrodes to form a Wheatstone bridge structure, and the resistance of four bridge arms of the piezoresistive material changes. Voltage is applied to the input end of the Wheatstone bridge, the change condition of the resistance can be reflected by measuring the output voltage of the Wheatstone bridge, and then the measurement of the electric field is realized.
As shown in the top view of fig. 1 and the schematic perspective view of fig. 2, the cantilever-type micro electric field sensor driven by electric field force of the present invention includes 4 symmetrical rectangular cantilevers 2 arranged along the horizontal direction, the cantilevers 2 are connected with a fixed region 1, 4 pieces of bending piezoresistive material 5 are arranged at the joints of the cantilevers 2 and the fixed region 1, the piezoresistive material 5 is connected by electrodes to form a four-bridge arm wheatstone bridge structure and is connected with an external test unit through a routing region 6, a square metal electrode 3 is arranged at the tail end of the cantilever 2, the metal electrode 3 is grounded or biased by a specific voltage as required, and a cavity 4 is arranged around the cantilever 2 to ensure the free vibration of the cantilever 2.
The fixed area 1 is prepared by a micromachining process based on a silicon wafer, is of a hollow structure, plays a role in supporting a cantilever and circuit wiring, and is generally about 1 mm to 10 mm in size.
The metal electrode 3 is positioned at one free vibration end of the cantilever and is obtained by etching metals such as aluminum, gold and the like. The metal electrode directly receives the action of an electric field force under the electric field, so that the cantilever is driven to bend. The metal electrode may be grounded or biased with a voltage as desired. When the direct current electric field measurement is carried out, the metal electrode is biased by alternating voltage, and when the alternating current electric field measurement is carried out, the metal electrode is biased by direct voltage.
The cavity 4 is located between the fixed area and the cantilever and is obtained by micromachining and etching the silicon substrate, and the cavity plays a role in releasing the cantilever and ensuring free vibration of the cantilever. The cavity width cannot be too small, otherwise the cantilever vibration damping is increased.
The piezoresistive material 5 is located near the fixed end of the cantilever, the piezoresistive material is obtained by carrying out ion doping and annealing on a semiconductor material, the piezoresistive material is prepared into a bent strip-shaped structure, and the interface depth of the piezoresistive material is smaller than the thickness of the cantilever. The 4 pieces of piezoresistive materials are connected by metal wires to form a four-bridge arm Wheatstone bridge structure, and the 4 pieces of piezoresistive materials are respectively positioned on 4 bridge arms of the Wheatstone bridge.
The routing area 6 is arranged on the fixed area and is connected with the metal electrode on the cantilever and the piezoresistive material through metal wires. The function of the circuit is to lead out the input and output ports of the Wheatstone bridge and the metal electrode, so that the chip is connected with the rear-end signal processing circuit.
The rear-end circuit consists of a differential amplification circuit and a phase-locked amplification circuit, wherein the differential amplification circuit is used for amplifying differential output signals of the Wheatstone bridge, and the phase-locked amplification circuit is used for extracting and amplifying specific frequency components of the signals. The reference frequency of the phase-locked amplifying circuit is twice of the frequency of the electric field.
Under the electric field environment, the electrostatic force borne by the metal electrode is as follows:
wherein, F e The electrostatic force is, A is the area of the metal electrode, and E is the electric field.
The cantilever motion equation is:
wherein m is the cantilever mass, g is the gravitational acceleration, k is the stiffness coefficient, C is the air resistance coefficient, and ρ is the air density. According to the motion equation, the change situation of the cantilever displacement along with time can be obtained, so that the change situation of the resistance of the piezoresistive material can be obtained. x (t) is the displacement magnitude of the cantilever in the vertical direction, and the sgn function is a sign function, and sgn (x) =1 when x >0, sgn (x) =0 when x =0, and sgn (x) = -1 when x < 0.
The method for amplifying the response of the sensor by adopting the alternating current-direct current voltage bias method comprises the following steps of:
the cantilever is subjected to an electric field force of:
wherein F is the electric field force, epsilon 0 Is dielectric constant, A is metal electrode area, V s To the far-end equivalent potential, V m D is the equivalent distance.
When the metal electrode is grounded
When measuring a DC electric field, V may be applied to the metal electrode ac sin (ω t) potential, then
The component of the angular frequency omega, the amplitude of which is
It can be seen that the metal electrode ac bias potential plays a role in response amplification. V dc Is the far-end equivalent potential, V, of the measured DC electric field ac Is the peak value of the alternating voltage applied to the metal electrode.
Similarly, when measuring an alternating electric field, V can be applied to the metal electrode dc The same can be used for amplification.
FIG. 3 is a schematic diagram of the displacement distribution of the cantilever-type electric field force sensor of the present invention; as can be seen from the figure, under the action of the electric field, the cantilevers bend upwards, and the bending degrees of the 4 cantilevers are consistent, so that the cantilevers have good symmetry. Meanwhile, the cantilever bending displacement is large, so that the cantilever type micro electric field sensor driven by the electric field force has high resolution and high sensitivity;
FIG. 4 is a graph of magnitude response data for different parameter sensors of the electric field force driven cantilever-type micro-electric field sensor of the present invention; according to data in the graph, the sensors with different parameters have good linearity under an electric field, and meanwhile, the sensors have good working performance, small measurement error, high consistency and wide measurement amplitude range within the electric field range of 1 kV/m-1 MV/m;
FIG. 5 is a graph of frequency response data for different amplitudes of an electric field force driven cantilever-type micro-electric field sensor of the present invention; according to data in the graph, under different electric field amplitudes, the output signal of the sensor is stable below the resonant frequency, the resonant frequency is 1kHz, most application requirements of the electric field sensor can be met, and meanwhile, under a high electric field amplitude, the measurement error of the sensor is small.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily made by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (7)
1. An electric field force driven cantilever type micro electric field sensor is characterized by comprising a fixed area (1), a cantilever (2), a metal electrode (3), a cavity (4), piezoresistive materials (5) and a routing area (6);
wherein, one end of the cantilever (2) is fixed on the fixed area (1), and the other end is provided with a metal electrode (3); a cavity (4) is arranged around the cantilever (2) to ensure the free vibration of the cantilever (2); the piezoresistive material (5) is arranged at the joint of the fixed region (1) and the cantilever (2), and the piezoresistive material (5) is connected with an external test unit through a routing region (6); the routing area (6) is arranged on the fixing area (1) and is connected with the metal electrode (3) and the piezoresistive material (5) through metal wires;
the input/output port and the metal electrode of the Wheatstone bridge are led out from the routing area (6) and are connected with the back end circuit; the rear end circuit consists of two stages of amplifying circuits, namely a differential amplifying circuit and a phase-locked amplifying circuit;
the reference frequency of the phase-locked amplifying circuit is twice of the frequency of the electric field.
2. The electric field force driven cantilever-type micro electric field sensor according to claim 1, wherein the fixed region (1) is prepared by silicon wafer based micro-processing and has a hollow structure; the size of the fixing area (1) is between 1 mm and 10 mm.
3. The electric field force driven cantilever-type micro electric field sensor according to claim 1, wherein the cantilever (2) is a rectangular thin film structure with 4 pieces, and is arranged in a central symmetry of a cross in the fixed area (1); the thickness of the cantilever (2) is 5 to 50 micrometers.
4. The electric field force driven cantilever-type miniature electric field sensor according to claim 1, wherein said metal electrode (3) is grounded or biased with a specific voltage.
5. The electric field force driven cantilever-type micro electric field sensor according to claim 1 or 4, wherein the metal electrode (3) is biased with a specific voltage to be divided into the following two cases: when the direct current electric field measurement is carried out, the metal electrode (3) is biased by alternating current voltage; when alternating current field measurement is carried out, the metal electrode (3) is biased by direct current voltage.
6. The electric field force driven cantilever type micro electric field sensor according to claim 1, wherein the piezoresistive material (5) is a bending strip structure, the number of the piezoresistive material is 4, and the piezoresistive material is respectively connected by metal wires to form a four-leg Wheatstone bridge structure.
7. The electric force driven cantilever miniature electric field sensor of claim 1 or 6, wherein said piezoresistive material (5) is obtained by ion doping and annealing a semiconductor material, and the interface depth of the piezoresistive material (5) is smaller than the thickness of the cantilever (2).
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5511427A (en) * | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
| CN103675481A (en) * | 2013-10-18 | 2014-03-26 | 中国科学院电子学研究所 | Piezoelectric cantilever beam type mini electric field sensor |
| CN109212329A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device |
| CN109212327A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | High-sensitivity miniature electric field sensing device with cantilever beam structure |
| CN109521258A (en) * | 2019-01-30 | 2019-03-26 | 云南电网有限责任公司电力科学研究院 | A kind of direct current electrical verification system and method based on MEMS electric-field sensor |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN113092885A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573725B2 (en) * | 2001-08-24 | 2003-06-03 | Trek, Inc. | Sensor for non-contacting electrostatic detector |
| JP4913467B2 (en) * | 2006-04-12 | 2012-04-11 | Ｈｓｔ株式会社 | Potential sensor |
| CN100506686C (en) * | 2006-12-13 | 2009-07-01 | 清华大学 | Method for manufacturing piezoresistance type micro-cantilever beam sensor on SOI silicon sheet |
| US7977635B2 (en) * | 2008-08-08 | 2011-07-12 | Oliver Edwards | Radiant energy imager using null switching |
| CN107329004A (en) * | 2016-12-02 | 2017-11-07 | 北京理工大学 | A kind of contactless MEMS autoexcitations stilling the theatre electrical resistivity survey examining system and its detection method based on electrostatic induction principle |
| CN207366645U (en) * | 2017-10-18 | 2018-05-15 | 京东方科技集团股份有限公司 | Electric field component detection device and space electric field detecting system |
| CN108120883B (en) * | 2017-11-22 | 2021-01-05 | 昆明理工大学 | Integrated optical waveguide three-dimensional electric field sensor |
| CN108896838B (en) * | 2018-06-12 | 2021-06-18 | 昆明理工大学 | Integrated optical waveguide electric field sensor and electric field measuring system using same |
-
2021
- 2021-11-23 CN CN202111393023.XA patent/CN114113812B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5511427A (en) * | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
| CN103675481A (en) * | 2013-10-18 | 2014-03-26 | 中国科学院电子学研究所 | Piezoelectric cantilever beam type mini electric field sensor |
| CN109212329A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device |
| CN109212327A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | High-sensitivity miniature electric field sensing device with cantilever beam structure |
| CN109521258A (en) * | 2019-01-30 | 2019-03-26 | 云南电网有限责任公司电力科学研究院 | A kind of direct current electrical verification system and method based on MEMS electric-field sensor |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN113092885A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor |
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