CN113092885A - Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor - Google Patents
Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor Download PDFInfo
- Publication number
- CN113092885A CN113092885A CN202110386099.3A CN202110386099A CN113092885A CN 113092885 A CN113092885 A CN 113092885A CN 202110386099 A CN202110386099 A CN 202110386099A CN 113092885 A CN113092885 A CN 113092885A
- Authority
- CN
- China
- Prior art keywords
- electric field
- piezoresistive
- field sensor
- vibration
- pickup element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005684 electric field Effects 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000008859 change Effects 0.000 claims abstract description 9
- 230000009471 action Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005259 measurement Methods 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 32
- 238000005516 engineering process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 5
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
A piezoresistive micro electric field sensor, a preparation method thereof and an electric field sensor are provided, wherein the piezoresistive micro electric field sensor comprises: a substrate; an anchor region disposed atop the substrate; the piezoresistive vibration pickup element is connected with the anchor area and is used for converting the electric field intensity into resistance value change; the vibration film is arranged above the substrate in a hanging mode, and is connected with the piezoresistive vibration pickup element through the supporting beam and used for sensing the change of an electric field; the vibration film is displaced under the action of electric field force, so that the resistance value of the piezoresistive vibration pickup structure is changed. The piezoresistive micro electric field sensor disclosed by the invention does not need to additionally introduce driving voltage, has the characteristics of low power consumption and capability of realizing measurement of an alternating-current and direct-current broadband electric field, and is stronger in signal obtained by piezoresistive detection, high in signal-to-noise ratio, small in size, simple in structure and beneficial to realizing batch manufacturing and system integration.
Description
Technical Field
The invention relates to the field of sensors and micro electro mechanical systems, in particular to a piezoresistive micro electric field sensor, a preparation method thereof and an electric field sensor.
Background
An electric field sensor based on a micro-electro-mechanical system (MEMS) is a device for measuring the electric field intensity and is widely applied to various fields of climate weather, power grids, petrochemical industry, aerospace and the like. When the electric field sensors form a wireless sensing network for monitoring a power grid, the energy consumption and the volume of the sensing nodes are problems which have to be considered.
With the development of MEMS technology, the MEMS technology-based electric field sensor is reduced in size, easier to manufacture and integrate, relative to the conventional electric field sensor. Most of the proposed MEMS electric field sensors drive a driving structure to displace by using an external driving voltage, and then realize measurement of an electric field to be measured based on a charge induction principle, which is limited by the limitations of a working principle and also brings a disadvantage of high power consumption.
Disclosure of Invention
In view of the above, the present invention is directed to a piezoresistive micro electric field sensor, a method for manufacturing the piezoresistive micro electric field sensor, and an electric field sensor, so as to at least partially solve at least one of the above technical problems.
To achieve the above object, as one aspect of the present invention, there is disclosed a piezoresistive micro electric field sensor comprising:
a substrate;
a plurality of anchor regions, all arranged on the substrate, for supporting and fixing the piezoresistive vibration pickup elements;
the piezoresistive vibration pickup element is connected with the anchor area and is used for converting the electric field intensity into resistance value change; and
the vibration film is arranged above the substrate in a suspended mode, is connected with the piezoresistive vibration pickup element through the supporting beam and is used for sensing the change of an electric field; the vibration film is displaced under the action of electric field force, so that the resistance value of the piezoresistive vibration pickup structure is changed.
As another aspect of the present invention, the present invention also discloses a method for manufacturing a piezoresistive micro electric field sensor, comprising:
step 1: patterning a photoresist layer over a device layer atop an SOI wafer, the pattern comprising: a vibrating membrane shape pattern, a support beam shape pattern, a piezoresistive vibration pickup element shape pattern, and an anchor region shape pattern;
step 2: etching the device layer on the top of the SOI wafer according to the pattern in the step 1 to form a vibration film, a support beam, a piezoresistive vibration pickup element and an anchor area, and removing the photoresist layer;
and step 3: etching a window on a substrate silicon layer at the bottom of the SOI wafer;
and 4, step 4: and etching the oxide layer in the middle of the SOI wafer through the window to form a substrate, and finally releasing the device layer to finish the preparation of the piezoresistive micro electric field sensor.
As another aspect of the invention, the invention also discloses an electric field sensor, which comprises the piezoresistive micro electric field sensor.
Based on the technical scheme, the piezoresistive micro electric field sensor, the preparation method thereof and the electric field sensor have at least one of the following advantages compared with the prior art:
1. the piezoresistive micro electric field sensor provided by the invention is excited by a high-strength electric field (for example, the electric field strength is more than or equal to 10kV/m), and the vibration film generates displacement under the action of the electric field force, so that the resistance value of the piezoresistive vibration pickup element is changed, and a signal which is in direct proportion to the electric field or voltage to be measured is output; therefore, extra driving voltage is not required to be introduced, the characteristic of low power consumption is achieved, and measurement of alternating current and direct current broadband electric fields can be realized;
2. the piezoresistive micro electric field sensor provided by the invention utilizes signals obtained by piezoresistive detection, and has the technical characteristics of stronger signal strength, high signal-to-noise ratio and small impedance of the electric field sensor;
3. the piezoresistive micro electric field sensor provided by the invention adopts a micro-nano manufacturing process, has the advantages of small volume and simple structure, is beneficial to realizing batch manufacturing and system integration, and reduces the manufacturing cost; the electric field sensor is beneficial to wide application in the field of measurement of medium and high-strength electric fields (such as electric field intensity is more than or equal to 10kV/m) or high-strength voltages (such as voltage is more than or equal to 35kV) such as the power internet of things and smart grids.
Drawings
FIG. 1 is a schematic structural diagram of a piezoresistive micro electric field sensor in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a support beam of the piezoresistive micro electric field sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a different structure of a piezoresistive vibration pickup element in the piezoresistive micro electric field sensor according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a piezoresistive micro electric field sensor according to an embodiment of the present invention, in which a tuning fork beam structure is used as a piezoresistive vibration pickup element;
FIG. 5 is a schematic structural diagram of a process for manufacturing a piezoresistive micro electric field sensor according to an embodiment of the present invention.
Description of reference numerals:
1-vibrating the membrane;
2-a support beam;
2 a-a straight beam; 2 b-a serpentine beam; 2 c-an L-beam; 2 d-U-beam; 2 e-irregular beam;
3-a piezoresistive vibration pickup element;
3 a-straight beam structure; 3 b-a folded beam structure; 3 c-tuning fork beam structure; 3 d-irregular beam structure;
4-an anchor region;
5-a substrate;
701-a device layer;
702-an oxide layer;
703-a substrate silicon layer;
704-a photoresist layer.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Therefore, the invention provides a piezoresistive low-power-consumption high-precision micro electric field sensor by adopting an advanced Micro Electro Mechanical System (MEMS) technology aiming at the practical requirements of the power Internet of things application and the development of a smart grid.
The invention discloses a piezoresistive micro electric field sensor, comprising:
a substrate 5;
a plurality of anchor regions 4, each provided on the substrate 5, for supporting and fixing the piezoresistive vibration pickup elements 3;
the piezoresistive vibration pickup element 3 is connected with the anchor area 4 and is used for converting the electric field intensity into resistance value change; and
the vibration film 1 is arranged above the substrate 5 in a suspended mode, is connected with the piezoresistive vibration pickup element 3 through the supporting beam 2 and is used for sensing the change of an electric field; the vibration film 1 is displaced under the action of the electric field force, so that the resistance value of the piezoresistive vibration pickup structure 3 is changed.
In some embodiments of the present invention, the structure of the piezoresistive vibration pickup element 3 comprises a beam structure;
in some embodiments of the invention, the beam structure comprises a straight beam structure, a folded beam structure, a tuning fork beam structure, or the like;
in some embodiments of the present invention, the piezoresistive vibration pickup element 3 is made of a material including any one or more of metal, silicon, and doped silicon.
In some embodiments of the present invention, the piezoresistive vibration pickup element 3 comprises a piezoresistor;
in some embodiments of the present invention, the piezoresistor can be prepared by ion implantation and diffusion to form doped silicon, or by thin film deposition and sputtering.
In some embodiments of the present invention, the anchor region 4 has at least one connecting and fixing structure for the piezoresistive vibration pickup structure 3;
in some embodiments of the present invention, the vibration excitation mode of the vibration film 1 includes an electrostatic mode, an electromagnetic mode or a piezoelectric mode;
in some embodiments of the present invention, the shape of the vibration film 1 includes a symmetrical shape;
in some embodiments of the invention, the symmetric shape comprises a rectangle, square, circle, or triangle;
in some embodiments of the present invention, the structure of the vibration film 1 includes a complete film structure or a film structure provided with through holes;
in some embodiments of the invention, the through-holes comprise a star, a sector, a rectangle, a square, a circle, or a triangle.
In some embodiments of the present invention, the support beam 2 comprises a straight beam, an L-shaped beam, a U-shaped beam, or a serpentine beam;
in some embodiments of the invention, the support beam 2 is connected to the edge of the vibrating membrane 1;
in some embodiments of the invention, the position of the support beams 2 is arranged at the top corners of the vibrating membrane 1 and may also be spread around the vibrating membrane structure 1, the number of the support beams 2 being at least one group.
The invention also discloses a preparation method of the piezoresistive micro electric field sensor, which comprises the following steps:
step 1: a photoresist layer 704 is patterned over a device layer 701 on top of a SOI wafer, the pattern comprising: a vibrating membrane 1 shape pattern, a support beam 2 shape pattern, a piezoresistive vibration pickup element 3 shape pattern, and an anchor region 4 shape pattern;
wherein, at least one end of the piezoresistive vibration pickup element 3 is connected with the anchor area 4;
wherein, the vibration film 1 is connected with the piezoresistive vibration pickup element 3 through a support beam 2;
step 2: etching the device layer 701 on the top of the SOI wafer according to the pattern in the step 1 to form a vibration film 1, a support beam 2, a piezoresistive vibration pickup element 3 and an anchor region 4, and removing the photoresist layer 704;
and step 3: etching a window on a substrate silicon layer 703 of the SOI wafer;
and 4, step 4: and etching the oxide layer 702 in the middle of the SOI wafer through the window to form the substrate 5, and finally releasing the device layer 701 to finish the preparation of the piezoresistive micro electric field sensor.
In some embodiments of the present invention, the sensor may be implemented using micro-nano machining technology, micro-electro-mechanical systems (MEMS) technology, SOI MEMS (silicon on insulator (SOI) wafer based micro-machining process), bulk silicon process, surface process, or precision machining technology.
The invention also discloses an electric field sensor which is internally provided with the piezoresistive micro electric field sensor.
In some embodiments of the invention, the electric field sensor comprises a two-dimensional electric field sensor or a three-dimensional electric field sensor.
In one embodiment of the invention, a piezoresistive micro electric field sensor is disclosed, which comprises a vibrating membrane 1, a supporting beam 2, a piezoresistive vibration pickup element 3, an anchor area 4, a substrate 5 and the like. The vibration film 1 is displaced under the action of electric field force, so that the resistance value of the piezoresistive vibration pickup element 3 is changed, and a signal in direct proportion to the measured electric field or voltage is output after passing through the signal processing circuit, so that the measurement of the measured electric field or voltage is realized. The vibration film 1 is connected with the piezoresistive vibration pickup element 3 through a supporting beam 2, and the piezoresistive vibration pickup element 3 is realized by adopting structural forms such as a beam, a tuning fork and the like or a piezoresistor mode. The piezoresistive micro electric field sensor does not need to additionally introduce driving voltage, and has the advantages of low power consumption, capability of realizing measurement of alternating current and direct current broadband electric fields and the like; and the signal obtained by piezoresistive detection is stronger, and the piezoresistive detection sensor has the characteristics of high signal-to-noise ratio, small impedance, simple structure and the like. The electric field sensor can adopt a micro-nano manufacturing process, is small in size, is beneficial to realizing batch manufacturing and system integration, can be widely applied to the power internet of things and a smart grid while reducing the cost, and is used for measuring a high-intensity electric field (for example, the electric field strength is more than or equal to 10kV/m) or measuring a high-intensity voltage (for example, the voltage is more than or equal to 35 kV).
In one embodiment of the invention, a piezoresistive micro electric field sensor is provided, which comprises a vibration film 1, a support beam 2, a piezoresistive vibration pickup element 3, an anchor area 4, a substrate 5 and the like; the vibration film 1 is connected with the piezoresistive vibration pickup element 3 through a support beam 2, and the piezoresistive vibration pickup element 3 is fixed on a substrate 5 through an anchor area 4.
The vibration film 1 is displaced under the action of electric field force, so that the resistance value of the piezoresistive vibration pickup element 3 is changed, and a signal in direct proportion to the measured electric field or voltage is output after passing through the signal processing circuit, so that the measurement of the measured electric field or voltage is realized. The vibration film 1 can be excited to vibrate in an electrostatic, electromagnetic or piezoelectric manner.
The vibration film 1 can be a square film structure, a round film structure or an irregular structure, the vibration film structure 1 can be provided with no through hole or through holes, and the shape of the through hole comprises a round shape, a square shape, a triangular shape, a fan shape or a star shape;
as shown in fig. 2, the shape of the support beam 2 includes, but is not limited to, a straight beam 2a, a serpentine beam 2b, an L-shaped beam 2c, a U-shaped beam 2d, or an irregular beam 2 e; the positions of the supporting beams 2 comprise the positions arranged at the top corners of the vibration film 1 or distributed at the side edges of the vibration film 1, and the number of the supporting beams 2 is at least one group; the number, shape and position of the support beams 2 can be set according to actual requirements.
As shown in fig. 3, the piezoresistive vibration pickup element 3 includes, but is not limited to, a straight beam structure 3a, a folded beam structure 3b, a tuning fork beam structure 3c, or an irregular beam structure 3 d;
the piezoresistive vibration pickup element 3 further comprises a piezoresistor, wherein the piezoresistor is formed by forming doped silicon through ion implantation and diffusion, or formed through thin film deposition and sputtering;
the piezoresistive vibration pickup element 3 is connected to a signal processing circuit, and a signal proportional to the measured electric field or the measured voltage is output by using the resistance value change of the piezoresistive vibration pickup element 3.
The manufacturing method of the piezoresistive micro electric field sensor in the embodiment includes, but is not limited to, micro-nano processing technology, Micro Electro Mechanical System (MEMS) technology, SOI MEMS technology, bulk silicon technology, surface technology, or precision machining technology;
in addition, the embodiment of the invention also discloses a two-dimensional electric field sensor, which comprises sensitive structures (namely the vibration film 1, the support beam 2, the piezoresistive vibration pickup element 3 and the anchor area 4) in the piezoresistive micro electric field sensor and is used for measuring a two-dimensional electric field or measuring a two-dimensional voltage;
in addition, the embodiment of the invention also discloses a three-dimensional electric field sensor, which comprises sensitive structures (namely the vibration film 1, the support beam 2, the piezoresistive vibration pickup element 3 and the anchor area 4) in the piezoresistive micro electric field sensor and is used for measuring a three-dimensional electric field or measuring a three-dimensional voltage;
the technical solution of the present invention is further illustrated by the following specific embodiments in combination with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
Example 1
As shown in fig. 1, the piezoresistive micro electric field sensor includes:
the vibration film 1 is connected with a piezoresistive vibration pickup element 3 through a support beam 2, and the piezoresistive vibration pickup element 3 is fixed on the top of a substrate 5 through an anchor area 4.
The vibration film 1 may be a square film structure having no through-hole.
As shown in FIG. 2, the shape of the support beam 2 can be a straight beam 2a, a serpentine beam 2b, an L-shaped beam 2c, a U-shaped beam 2d, an irregular beam 2e, etc., in this embodiment, the support beam 2 is a straight beam 2a, one end of the support beam 2 is disposed at the midpoint of the piezoresistive vibration pickup element 3, and the other end is disposed at the midpoint of the side edge of the vibration film 1.
The piezoresistive vibration pickup element 3 in this embodiment adopts a straight beam structure 3a, and two ends of the piezoresistive vibration pickup element 3 are fixed on a substrate 5 through anchor regions 4.
Example 2
As shown in FIG. 4, the piezoresistive micro-electric field sensor in this embodiment is different from that in embodiment 1 only in that the piezoresistive vibration pickup element 3 adopts a tuning fork beam structure 3 c.
In one embodiment of the invention, the invention also discloses a preparation method of the piezoresistive micro electric field sensor;
as shown in fig. 5, the method comprises the following steps:
s1: a photoresist layer 704 is spin-coated on the device layer 701 of the SOI wafer to be used as a mask material, and photoetching is performed by using a mask plate to form a structural shape shown as a diagram a in fig. 5;
s2: etching the sensor vibration film 1, the support beam 2, the piezoresistive vibration pickup element 3 and the anchor region 4 on the device layer 701 by adopting a DRIE (direct drive etching) process, and removing the photoresist layer 704 to form a structural shape shown as a B diagram in FIG. 5;
s3: etching a window on the substrate silicon layer 703 of the SOI wafer by a DRIE process to form a structural shape as shown in a diagram C in FIG. 5;
s4: and (3) etching the oxide layer 702 by using an HF wet method, finally releasing the device layer 701, forming a substrate 5 by using the substrate silicon layer 703 obtained in the step (3) and the oxide layer 702 obtained in the step (4) together, forming a structural shape shown as a diagram D in fig. 5, and finishing the preparation of the piezoresistive micro electric field sensor.
The manufacturing method of the piezoresistive micro electric field sensor disclosed by the invention comprises but is not limited to a micro-nano processing technology, a Micro Electro Mechanical System (MEMS) technology, an SOI MEMS, a bulk silicon process, a surface process or a precision machining technology and the like.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A piezoresistive miniature electric field sensor, comprising:
a substrate (5);
a plurality of anchor regions (4) each disposed on the substrate (5) for supporting and securing the piezoresistive vibration sensing elements (3);
the piezoresistive vibration pickup element (3) is connected with the anchor area (4) and is used for converting the electric field intensity into resistance value change; and
the vibration film (1) is arranged above the substrate (5) in a suspended mode, is connected with the piezoresistive vibration pickup element (3) through the supporting beam (2), and is used for sensing the change of an electric field; the vibration film (1) generates displacement under the action of electric field force, so that the resistance value of the piezoresistive vibration pickup structure (3) is changed.
2. The piezoresistive micro electric field sensor according to claim 1,
the structure of the piezoresistive vibration pickup element (3) comprises a beam structure;
wherein the beam structure comprises a straight beam structure, a bent beam structure or a tuning fork beam structure;
the piezoresistive vibration pickup element (3) is made of any one or a plurality of materials of metal, silicon and doped silicon.
3. The piezoresistive micro electric field sensor according to claim 1,
the piezoresistive vibration pickup element (3) comprises a piezoresistor.
4. The piezoresistive micro electric field sensor according to claim 1,
the anchor area (4) is provided with at least one connecting and fixing structure for the piezoresistive vibration pickup structure (3).
5. The piezoresistive micro electric field sensor according to claim 1,
the vibration excitation mode of the vibration film (1) comprises an electrostatic mode, an electromagnetic mode or a piezoelectric mode.
6. The piezoresistive micro electric field sensor according to claim 1,
the shape of the diaphragm (1) comprises a symmetrical shape;
wherein the symmetric shape comprises a rectangle, square, circle, or triangle;
the structure of the vibration film (1) comprises a complete film structure or a film structure provided with through holes;
wherein the through-hole comprises a star shape, a sector shape, a rectangular shape, a square shape, a circular shape or a triangular shape.
7. The piezoresistive micro electric field sensor according to claim 1,
the supporting beam (2) comprises a straight beam, an L-shaped beam, a U-shaped beam or a snake-shaped beam;
the supporting beam (2) is connected with the edge of the vibrating membrane (1).
8. A preparation method of a piezoresistive micro electric field sensor is characterized by comprising the following steps:
step 1: patterning a photoresist layer (704) over a device layer (701) on top of an SOI wafer, the pattern comprising: the shape pattern of the vibration film (1), the shape pattern of the support beam (2), the shape pattern of the piezoresistive vibration pickup element (3) and the shape pattern of the anchor area (4);
step 2: etching a device layer (701) on the top of the SOI wafer according to the pattern in the step 1 to form a vibration film (1), a support beam (2), a piezoresistive vibration pickup element (3) and an anchor region (4), and removing the photoresist layer (704);
and step 3: etching a window on a substrate silicon layer (703) at the bottom of the SOI wafer;
and 4, step 4: and etching the oxide layer (702) in the middle of the SOI wafer through the window to form a substrate (5), and finally releasing the device layer (701) to finish the preparation of the piezoresistive micro electric field sensor.
9. An electric field sensor incorporating a piezoresistive micro electric field sensor according to any of claims 1 to 7.
10. The electric field sensor according to claim 9,
the electric field sensor includes a two-dimensional electric field sensor or a three-dimensional electric field sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110386099.3A CN113092885B (en) | 2021-04-09 | 2021-04-09 | Piezoresistive miniature electric field sensor, preparation method thereof and electric field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110386099.3A CN113092885B (en) | 2021-04-09 | 2021-04-09 | Piezoresistive miniature electric field sensor, preparation method thereof and electric field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113092885A true CN113092885A (en) | 2021-07-09 |
| CN113092885B CN113092885B (en) | 2023-11-24 |
Family
ID=76676091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110386099.3A Active CN113092885B (en) | 2021-04-09 | 2021-04-09 | Piezoresistive miniature electric field sensor, preparation method thereof and electric field sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113092885B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113655300A (en) * | 2021-09-10 | 2021-11-16 | 中国科学院空天信息创新研究院 | Resonant electric field sensor and preparation method thereof |
| CN113671276A (en) * | 2021-09-10 | 2021-11-19 | 中国科学院空天信息创新研究院 | Space electric field measuring device and system |
| CN113960381A (en) * | 2021-10-25 | 2022-01-21 | 南方电网科学研究院有限责任公司 | Non-contact electric field measuring sensor |
| CN114113812A (en) * | 2021-11-23 | 2022-03-01 | 清华大学 | Cantilever type micro electric field sensor driven by electric field force |
| CN115586380A (en) * | 2022-11-03 | 2023-01-10 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308781A (en) * | 2012-03-16 | 2013-09-18 | 中国科学院电子学研究所 | Flexible resonant three-dimensional electric field sensor |
| WO2014088020A1 (en) * | 2012-12-06 | 2014-06-12 | 株式会社村田製作所 | Piezoresistive mems sensor |
| CN103983863A (en) * | 2014-05-30 | 2014-08-13 | 唐凯 | Tiny thunder early warning device |
| CN105911370A (en) * | 2016-04-28 | 2016-08-31 | 中国科学院电子学研究所 | Metal microstructure electric field sensor |
| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Micro-resonator, exciting/pick-up circuit and the pressure sensor of pressure drag pick-up |
| CN111238714A (en) * | 2020-02-19 | 2020-06-05 | 黑龙江大学 | Micro-pressure sensor and manufacturing process method thereof |
| WO2020200076A1 (en) * | 2019-04-02 | 2020-10-08 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN112573477A (en) * | 2020-12-08 | 2021-03-30 | 清华大学 | Preparation process flow of miniature electric field sensing device based on electrostatic force and piezoresistive effect |
-
2021
- 2021-04-09 CN CN202110386099.3A patent/CN113092885B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308781A (en) * | 2012-03-16 | 2013-09-18 | 中国科学院电子学研究所 | Flexible resonant three-dimensional electric field sensor |
| WO2014088020A1 (en) * | 2012-12-06 | 2014-06-12 | 株式会社村田製作所 | Piezoresistive mems sensor |
| CN103983863A (en) * | 2014-05-30 | 2014-08-13 | 唐凯 | Tiny thunder early warning device |
| CN105911370A (en) * | 2016-04-28 | 2016-08-31 | 中国科学院电子学研究所 | Metal microstructure electric field sensor |
| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Micro-resonator, exciting/pick-up circuit and the pressure sensor of pressure drag pick-up |
| WO2020200076A1 (en) * | 2019-04-02 | 2020-10-08 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
| CN111238714A (en) * | 2020-02-19 | 2020-06-05 | 黑龙江大学 | Micro-pressure sensor and manufacturing process method thereof |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN112573477A (en) * | 2020-12-08 | 2021-03-30 | 清华大学 | Preparation process flow of miniature electric field sensing device based on electrostatic force and piezoresistive effect |
Non-Patent Citations (1)
| Title |
|---|
| 王宇等: "基于旋转谐振结构的单芯片二维电场传感器", 《传感器与微系统》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113655300A (en) * | 2021-09-10 | 2021-11-16 | 中国科学院空天信息创新研究院 | Resonant electric field sensor and preparation method thereof |
| CN113671276A (en) * | 2021-09-10 | 2021-11-19 | 中国科学院空天信息创新研究院 | Space electric field measuring device and system |
| CN113655300B (en) * | 2021-09-10 | 2024-05-17 | 中国科学院空天信息创新研究院 | Resonant electric field sensor and preparation method thereof |
| CN113960381A (en) * | 2021-10-25 | 2022-01-21 | 南方电网科学研究院有限责任公司 | Non-contact electric field measuring sensor |
| CN114113812A (en) * | 2021-11-23 | 2022-03-01 | 清华大学 | Cantilever type micro electric field sensor driven by electric field force |
| CN114113812B (en) * | 2021-11-23 | 2022-11-18 | 清华大学 | Cantilever type micro electric field sensor driven by electric field force |
| CN115586380A (en) * | 2022-11-03 | 2023-01-10 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
| CN115586380B (en) * | 2022-11-03 | 2024-01-23 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113092885B (en) | 2023-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113092885B (en) | Piezoresistive miniature electric field sensor, preparation method thereof and electric field sensor | |
| CN113125865B (en) | Vibration capacitance type micro electric field sensor, preparation method thereof and electric field sensor | |
| US8187902B2 (en) | High performance sensors and methods for forming the same | |
| CN110940866B (en) | Sensitivity adjustable resonance miniature electric field sensor | |
| EP1762823A2 (en) | Combined sensor and its fabrication method | |
| CN112540239B (en) | Multi-structure coupling-based miniature electric field sensor and preparation method thereof | |
| CN107827077B (en) | Piezoresistive MEMS temperature sensor and manufacturing method thereof | |
| CN103217553A (en) | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode | |
| Linder et al. | Investigations on free-standing polysilicon beams in view of their application as transducers | |
| CN113702665B (en) | MEMS accelerometer and forming method thereof | |
| Kádár et al. | Integrated resonant magnetic-field sensor | |
| CN103808961A (en) | Cantilever part and resonant acceleration sensor using the same | |
| CN113960380A (en) | Miniature electric field sensor | |
| CN113063996A (en) | Electrostatic driving metal microstructure electric field sensor | |
| CN105371832A (en) | Disc multi-ring inner double-beam isolated ring resonator gyro and preparation method thereof | |
| JP2009511907A (en) | Microelectromechanical magnetometer | |
| CN113655300B (en) | Resonant electric field sensor and preparation method thereof | |
| CN111017861A (en) | Capacitance-cantilever beam micro-type electric field measurement sensing device based on inverse piezoelectric effect | |
| Tang et al. | Technology for fabricating dense 3-D microstructure arrays for biomimetic hair-like sensors | |
| CN113970655B (en) | MEMS accelerometer and forming method thereof | |
| CN111766405B (en) | Double-shaft silicon micro-accelerometer based on resonator energy localization effect | |
| CN111487567B (en) | Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof | |
| CN115077508A (en) | MEMS device and forming method thereof | |
| CN113625064B (en) | Torque type miniature electric field sensor based on modal localization | |
| CN117517803B (en) | Vertical modulation resonant electric field sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |