CN105911370A - Metal microstructure electric field sensor - Google Patents
Metal microstructure electric field sensor Download PDFInfo
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- CN105911370A CN105911370A CN201610273929.0A CN201610273929A CN105911370A CN 105911370 A CN105911370 A CN 105911370A CN 201610273929 A CN201610273929 A CN 201610273929A CN 105911370 A CN105911370 A CN 105911370A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
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Abstract
The invention provides a metal microstructure electric field sensor which comprises a shielding electrode, a substrate, a first driving structure, a second driving structure and an induction electrode. The first driving structure, the second driving structure and the induction electrode are arranged on the substrate. The first driving structure and the second driving structure are symmetrically arranged at the two sides of the induction electrode. In this way, the shielding electrode is clamped between the first driving structure and the second driving structure which drive the shielding electrode to move periodically in response to the induction electrode. The shielding electrode, the first driving structure, the second driving structure, and the induction electrode are all made from metal materials. According to the invention, metal materials are adopted for the making of the sensor with greater electrode elasticity, enhanced resolution and sensitivity for electric field measurement and an enlarged effective charge induction area. The vertical vibration mode adopted by the electrode sensor greatly raises the resolution and sensitivity for electric field measurement. The damping holes opened on the surface of a moving electrode cut down driving voltage and noise caused by the driving voltage, but on contrary, increase the ratio of signal to noise.
Description
Technical field
The present invention relates to electric field sensor technology field, particularly relate to a kind of metal micro structure electric field sensing
Device.
Background technology
In the forming process of the extreme weather such as thunderstorm, sandstorm, atmospheric electric field generation acute variation, adopt
With electric-field sensor, atmospheric electric field is detected, extreme weather forecast is had important function, also may be used
For the atmospheric circulation research of geology field, atmospheric pollution detection, and in commercial production electrostatic monitoring with
In protection, power system, Discharge Analysis, high pressure equipment and high-voltage line Electric Field Distribution are measured, are insulated
Insulating sublayer performance detection etc..
The research of electric-field sensor has been carried out for many years, wherein traditional mechanical based on electric charge induction principle
Formula electric-field sensor typically uses metal to realize the measurement to external electrical field as electrode, is characterized in steady
Qualitative good, electric field resolving power height, it is adaptable to the electric field inspection in the adverse circumstances such as low temperature, humidity, vibration
Survey, but power consumption is high, volume is big.
Micro field sensor based on MEMS technology due to have low in energy consumption, volume is little, easily criticize
Quantify the advantages such as manufacture.Earlier 1990s, MEMS technology has been used to process
Go out miniature electrostatic field meter based on electric charge induction principle.The MEMS miniature electric field of document report at present
Transducer sensitive structure uses silicon face processing technique to make mostly, it is advantageous that and can use standard
Prepared by MEMS technology mass, technics comparing is ripe.But owing to silicon face processing technique is difficult to processing
Complicated multi-layer three-dimension micro structure, mode of vibration is generally horizontal direction vibration, and Oscillation Amplitude is less,
It is unfavorable for improving the sensitivity of sensor and electric field resolving power further.
Summary of the invention
(1) to solve the technical problem that
In order to solve the problems referred to above that prior art exists, the invention provides a kind of metal micro structure electricity
Field sensor.
(2) technical scheme
The invention provides a kind of metal micro structure electric-field sensor, including: bucking electrode 21, substrate
11 and be positioned on substrate the first driving structure, second drive structure and induction electrode 20；Wherein,
Described first drives structure and second to drive symmetrical configuration to be arranged at the both sides of induction electrode, and it is by described
Bucking electrode 21 is held on therebetween, and drives described bucking electrode 21 relative to induction electrode 20
Making cycle movement, described bucking electrode 21, first drives structure, the second driving structure and faradism
Pole 20 uses metal material.
(3) beneficial effect
From technique scheme it can be seen that the metal micro structure electric-field sensor of the present invention has following
Beneficial effect:
(1) drive structure, induction electrode and bucking electrode to use metal material to prepare, compare silicon micro-
Structure, the electrode elastic of metal material is big so that moving electrode and bucking electrode can reach bigger shaking
Dynamic amplitude, improves resolving power and the sensitivity of electric field measurement；
(2) metal material easy-formation, is easily processed into multilamellar complexity three by induction electrode and bucking electrode
Dimension micro structure, increases effective charge induction area；
(3) electrode sensor uses vertical vibration mode, increases Oscillation Amplitude, improves electric field
The resolving power measured and sensitivity；
(4) by offering damping hole on moving electrode surface, moving electrode can be reduced and be perpendicular to substrate
Direction up-down vibration time air drag, reduce driving voltage, improve signal to noise ratio；
(5) induction electrode and bucking electrode can use rectangular flat structure, simple in construction, it is easy to add
Work.
Accompanying drawing explanation
Fig. 1 is the metal micro structure electric-field sensor overall structure figure of first embodiment of the invention；
Fig. 2 is driving structure fixed electrode and the induction electrode structure chart of first embodiment of the invention；
Fig. 3 is the snakelike elastic beam structure figure of first embodiment of the invention；
Fig. 4 is the comb electrodes structure chart of the interlaced arrangement of first embodiment of the invention；
Fig. 5 is the moving electrode of first embodiment of the invention, snakelike spring beam and bucking electrode integrative-structure
Figure.
Fig. 6 is the moving electrode of second embodiment of the invention, snakelike spring beam and bucking electrode integrative-structure
Figure；
Fig. 7 is driving structure fixed electrode and the induction electrode structure chart of second embodiment of the invention.
[symbol description]
11-substrate；
20-induction electrode；21-bucking electrode；22-the first induction electrode；23-the second induction electrode；
31-the first fixed electrode；32-the first moving electrode；The snakelike spring beam of 33-first；The snakelike bullet of 34-second
Property beam；35-the first anchor point；36-the second anchor point；
41-the second fixed electrode；42-the second moving electrode；The snakelike spring beam of 43-the 3rd；The snakelike bullet of 44-the 4th
Property beam；45-the 3rd anchor point；46-the 4th anchor point；
51-moving electrode damping hole；52-bucking electrode damping hole.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete real
Execute example, and referring to the drawings, the present invention is described in more detail.
Along with the development of MEMS technology technology, the research that metal micro structure progressively causes people is emerging
Interest, uses metal microdevices to replace part or all of silicon structure, can further improve the property of micro structure
Energy.Worked out at present both at home and abroad Microspring based on metal material, micro-cell electron capture detector, micro-electric fuse,
Metal microfluidic sensor etc., and carried out Preliminary Applications in association area, therefore based on metal material
The research of the micro structure electric-field sensor of material has great importance, and the present invention proposes a kind of gold just
Belong to micro structure electric-field sensor.
A kind of metal micro structure electric-field sensor of first embodiment of the invention, including substrate 11, first
Drive structure, the second driving structure, bucking electrode 21 and induction electrode 20.Wherein,
Induction electrode 20 includes the first induction electrode 22 and the second induction electrode 23, the first induction electrode
22 and second induction electrode 23 be the unilateral comb structure with N number of comb, the comb of the two is relative
Arranging, symmetric arrays is also fixed on substrate surface；
First drives structure and second to drive symmetrical configuration to be arranged at the both sides of induction electrode, wherein,
First drives structure to include first fixed electrode the 31, first moving electrode the 32, first snakelike spring beam
33, the second snakelike spring beam the 34, first anchor point 35 and the second anchor point 36, the first fixed electrode 31 is solid
Due to substrate surface, it is upper and lower that the first anchor point 35 and the second anchor point 36 are individually fixed in the first fixed electrode
The substrate surface of both sides, the first upper and lower two side ends of moving electrode connects the first snakelike spring beam 33 respectively
With the second snakelike spring beam 34, the first snakelike spring beam 33 and the second snakelike spring beam 34 connect respectively
First anchor point 35 and the second anchor point 36, supports the first moving electrode 32 and is fixed on substrate surface so that
First moving electrode 32 is positioned at the surface of the first fixed electrode, and is being perpendicular to lining with the first fixed electrode 31
End side is spaced upwardly of it.
Second drives structure to include the second fixed electrode snakelike spring beam of the 41, second moving electrode the 42, the 3rd
43, the 4th snakelike spring beam the 44, the 3rd anchor point 45 and the 4th anchor point 46, the second fixed electrode 41 is solid
Due to substrate surface, it is upper and lower that the 3rd anchor point 45 and the 4th anchor point 46 are individually fixed in the second fixed electrode
The substrate surface of both sides, the second upper and lower two side ends of moving electrode connects the 3rd snakelike spring beam 43 respectively
With the 4th snakelike spring beam 44, the 3rd snakelike spring beam 43 and the 4th snakelike spring beam 44 connect respectively
3rd anchor point 45 and the 4th anchor point 46, supports the second moving electrode 42 and is fixed on substrate surface so that
Second moving electrode 42 is positioned at the surface of the second fixed electrode, and is being perpendicular to lining with the second fixed electrode 41
End side is spaced upwardly of it.
Bucking electrode 21 is bilateral comb structure, and its every side has N+1 comb, and it is towards first
The side and first driving structure drives the first moving electrode 32 of structure to be connected, and it drives towards second
The side of dynamic structure and second drives the second moving electrode 42 of structure to be connected so that bucking electrode two
The comb structure of side and the comb structure of the first induction electrode and the second induction electrode are all in crossing one another
Arrangement, wherein, 10≤N≤100.
Wherein, structure, bucking electrode 21 and induction electrode 20 is driven all to use metal material, preferably
Ground, this metal material be gold, silver, copper, nickel at least one, use UV-LIGA plating, spatter
Penetrate or be prepared by electrochemical etching technique.
The driving structure of the embodiment of the present invention, induction electrode and bucking electrode use metal material to prepare,
Comparing silicon microstructure, the electrode elastic of metal material is big so that moving electrode and bucking electrode can reach
Bigger Oscillation Amplitude, improves resolving power and the sensitivity of electric field measurement；Metal material easy-formation,
Easily induction electrode and bucking electrode are processed into multilamellar complex three-dimensional micro structure, effective charge can be increased
Induction area.
Wherein, snakelike spring beam for the support of moving electrode with fixing, it is preferable that snakelike spring beam by
The folding beam of M L-type connects composition, and quantity M of folding beam affects the elastic system of electric-field sensor
Number.Wherein, 3≤M≤20, the details of snakelike spring beam is as shown in Figure 3.
Anchor point is the moving electrode strong point on substrate, both ensure that the connection of moving electrode, and in turn ensure that
Spacing between moving electrode and fixed electrode.
Preferably, substrate 11 can be the insulant such as glass, silicon chip.
The metal micro structure electric-field sensor of the embodiment of the present invention, this electric-field sensor uses electrostatic drive
Energisation mode, drive and load driving voltage on structure fixed electrode, general use alternating voltage signal,
Make to produce between fixed electrode and moving electrode electrostatic force, electrostatic force size and drive electrode area, fixed electricity
Pole and moving electrode spacing, load driving voltage value, electric-field sensor coefficient of elasticity relevant, work as electric field
After the configuration of sensor is fixing, drive electrode area, fixed electrode and moving electrode spacing and electric field pass
The coefficient of elasticity of sensor determines, electrostatic force is mainly determined by the driving voltage signal magnitude loaded.
Along with the change of driving voltage, the electrostatic force change between fixed electrode and moving electrode, moving electrode with
The change of electrostatic force and be perpendicular to the direction up-down vibration of substrate, thus drive and be connected with moving electrode
The bucking electrode 21 of one moves back and forth in the direction being perpendicular to induction electrode, bucking electrode 21 and sense
Answer the relative position generating period change between electrode 20, thus cause and feel on induction electrode surface
Answer the mechanical periodicity of the quantity of electric charge, charge inducing variable quantity relation proportional to external electrical field intensity, pass through
This charge inducing variable quantity is measured, it is achieved the measurement to external electrical field.
Preferably, the first moving electrode 32 and the second moving electrode 42 surface have P × Q moving electrode resistance
The P row Q row damping hole array that Buddhist nun hole 51 is constituted, moving electrode damping hole 51 can be rectangle, circle
Or it is oval.By offering moving electrode damping hole 51 at the first moving electrode and the second moving electrode surface, can
To reduce the moving electrode air drag when being perpendicular to the direction up-down vibration of substrate, improve electrode sensing
The sensitivity of device.
The metal micro structure electric-field sensor of the second embodiment of the present invention, in order to reach brief description
Purpose, in above-mentioned first embodiment any technical characteristic narration making same application all and in this, nothing
Identical narration need to be repeated.
Induction electrode 20 is a rectangular flat structure and is fixed on substrate surface, and bucking electrode 21 is square
Shape slab construction, it drives the first moving electrode 32 of structure towards the first side driving structure and first
Being connected, it drives the second moving electrode 42 phase of structure towards the second side driving structure and second
Connecting, bucking electrode is positioned at the surface of induction electrode.
Preferably, bucking electrode 21 surface has the K that K × L bucking electrode damping hole 52 is constituted
Row L row damping hole array, bucking electrode damping hole 52 can be rectangle, circular or oval.Logical
Cross and offer bucking electrode damping hole 52 at bucking electrode 21, bucking electrode can be reduced and be perpendicular to lining
Air drag during the direction up-down vibration at the end, improves the sensitivity of electrode sensor.
The metal micro structure electric-field sensor of the second embodiment of the present invention, similar with first embodiment,
Along with the change of driving voltage, the electrostatic force change between fixed electrode and moving electrode, moving electrode is along with quiet
The change of electric power and be perpendicular to the direction up-down vibration of substrate, thus drive and be integrally connected with moving electrode
Bucking electrode 21 move back and forth in the direction being perpendicular to induction electrode, bucking electrode 21 and faradism
Relative position generating period change between pole 20, thus cause faradism on induction electrode surface
The mechanical periodicity of lotus amount, charge inducing variable quantity relation proportional to external electrical field intensity, by this
Charge inducing variable quantity measures, it is achieved the measurement to external electrical field.Relative to first embodiment,
The structure of induction electrode and bucking electrode is the simplest, it is easy to processing.
So far, already in connection with accompanying drawing, the present embodiment has been described in detail.According to above description, this
A kind of metal micro structure electric-field sensor of the present invention should have been had and clearly recognized by skilled person
Know.
It should be noted that in accompanying drawing or description text, the implementation not illustrating or describing,
It is form known to a person of ordinary skill in the art in art, is not described in detail.Additionally,
The above-mentioned definition to each element is not limited in various concrete structures, shape or the side mentioned in embodiment
Formula, it can be changed or replace, such as by those of ordinary skill in the art simply:
(1) the direction term mentioned in embodiment, such as " on ", D score, "front", "rear", " left ",
" right " etc., are only the directions with reference to accompanying drawing, are not used for limiting the scope of the invention；
(2) above-described embodiment can based on design and the consideration of reliability, being mixed with each other collocation use or
Using with other embodiment mix and match, the technical characteristic in i.e. different embodiments can be with independent assortment shape
Become more embodiment.
In sum, the present invention provides a kind of metal micro structure electric-field sensor, with existing silica-based knot
Structure micro field sensor is compared, metal material easy-formation, can process multilamellar complex three-dimensional micro structure,
In the selection of mode of vibration more flexible；Electrode structure uses vertical vibration mode, can reach relatively
Big Oscillation Amplitude, is favorably improved resolving power and sensitivity.
Particular embodiments described above, is carried out the purpose of the present invention, technical scheme and beneficial effect
Further describe, be it should be understood that the foregoing is only the present invention specific embodiment and
, be not limited to the present invention, all within the spirit and principles in the present invention, that is done any repaiies
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a metal micro structure electric-field sensor, it is characterised in that including: bucking electrode (21),
Substrate (11) and the first driving structure being positioned on substrate, the second driving structure and induction electrode (20)；
Wherein,
Described first drives structure and second to drive symmetrical configuration to be arranged at the both sides of induction electrode, and it will
Described bucking electrode (21) is held on therebetween, and drive described bucking electrode (21) relative to
Induction electrode (20) makees cycle movement, described bucking electrode (21), first drive structure, the
Two drive structure and induction electrode (20) to use metal material.
2. metal micro structure electric-field sensor as claimed in claim 1, it is characterised in that described
First drives structure and second to drive structure to drive bucking electrode (21) in the side being perpendicular to induction electrode
To moving back and forth, the relative position between described bucking electrode (21) with induction electrode (20) occurs
Cyclically-varying.
3. metal micro structure electric-field sensor as claimed in claim 2, it is characterised in that described
First drives structure to include the first fixed electrode (31), the first moving electrode (32), the first snakelike spring beam
(33), the second snakelike spring beam (34), the first anchor point (35) and the second anchor point (36), described
First fixed electrode (31) is fixed on substrate surface, and the first moving electrode is respectively by the first snakelike spring beam
(33) and the second snakelike spring beam (34) connects the first anchor point (35) and the second anchor point (36),
And it being fixed on substrate surface, the first moving electrode (32) is positioned at the surface of the first fixed electrode, and with
One fixed electrode (31) is spaced upwardly of it being perpendicular to substrate side；
Described second drives structure to include the second fixed electrode (41), the second moving electrode (42), the 3rd Serpentis
Shape spring beam (43), the 4th snakelike spring beam (44), the 3rd anchor point (45) and the 4th anchor point (46),
Described second fixed electrode (41) is fixed on substrate surface, and the second moving electrode is respectively by the 3rd snakelike bullet
Property beam (43) and the 4th snakelike spring beam (44) connect the 3rd anchor point (45) and the 4th anchor point (46),
And it being fixed on substrate surface, the second moving electrode (42) is positioned at the surface of the second fixed electrode, and with
Two fixed electrodes (41) are spaced upwardly of it being perpendicular to substrate side.
4. metal micro structure electric-field sensor as claimed in claim 3, it is characterised in that described
First moving electrode (32) and the second moving electrode (42) have P × Q moving electrode damping hole (51)
The P row Q row damping hole array constituted.
5. metal micro structure electric-field sensor as claimed in claim 2, it is characterised in that described
Induction electrode (20) includes the first induction electrode (22) and the second induction electrode (23), described
One induction electrode (22) and the second induction electrode (23) are the unilateral comb structure with N number of comb,
The comb of the two is oppositely arranged, and symmetric arrays is also fixed on substrate surface；
Described bucking electrode (21) is bilateral comb structure, and its every side has N+1 comb, its court
Driving structure to be connected to the first side driving structure and first, it is towards the second side driving structure
Hold and drive structure to be connected with second so that the comb structure of bucking electrode both sides and the first induction electrode
With the comb structure of the second induction electrode all in the arrangement, wherein, 10≤N≤100 of crossing one another.
6. metal micro structure electric-field sensor as claimed in claim 2, it is characterised in that described
Induction electrode (20) and bucking electrode (21) are a rectangular flat structure, described bucking electrode (21)
Driving structure to be connected towards the first side driving structure and first, it drives structure towards second
Side and second drives structure to be connected, and described bucking electrode is positioned at the surface of induction electrode.
7. metal micro structure electric-field sensor as claimed in claim 6, it is characterised in that described
Bucking electrode surface has the K row L row damping hole that K × L bucking electrode damping hole (52) is constituted
Array.
8. the metal micro structure electric field sensing as described in claim any one of claim 1 to 7
Device, it is characterised in that described metal material be gold, silver, copper, nickel at least one.
9. the metal micro structure electric field sensing as described in claim any one of claim 1 to 7
Device, it is characterised in that use UV-LIGA plating, sputtering or the preparation shielding of electrochemical etching technique
Electrode (21), the first driving structure, the second driving structure and induction electrode (20).
10. metal micro structure electric-field sensor as claimed in claim 3, it is characterised in that described
Snakelike spring beam is connected by the folding beam of M L-type and constitutes, 3≤M≤20.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110299436.5A CN113063996A (en) | 2016-04-28 | 2016-04-28 | Electrostatic driving metal microstructure electric field sensor |
| CN201610273929.0A CN105911370A (en) | 2016-04-28 | 2016-04-28 | Metal microstructure electric field sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610273929.0A CN105911370A (en) | 2016-04-28 | 2016-04-28 | Metal microstructure electric field sensor |
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| CN202110299436.5A Division CN113063996A (en) | 2016-04-28 | 2016-04-28 | Electrostatic driving metal microstructure electric field sensor |
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| CN202110299436.5A Pending CN113063996A (en) | 2016-04-28 | 2016-04-28 | Electrostatic driving metal microstructure electric field sensor |
| CN201610273929.0A Pending CN105911370A (en) | 2016-04-28 | 2016-04-28 | Metal microstructure electric field sensor |
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Cited By (4)
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| CN107273627A (en) * | 2017-06-26 | 2017-10-20 | 国网江苏省电力公司经济技术研究院 | A kind of perforate electromagnetic shield design method of fast resolving electromagnetic field intensity distribution |
| US10670645B2 (en) | 2017-10-18 | 2020-06-02 | Boe Technology Group Co., Ltd. | Electric field component detection device and method, and space electric field detection system |
| CN113092885A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor |
| CN115586380A (en) * | 2022-11-03 | 2023-01-10 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
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| CN115524544B (en) * | 2022-11-24 | 2023-03-14 | 西安交通大学 | Piezoelectric-driven horizontal resonant micro electric field sensor and working method thereof |
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| CN107273627A (en) * | 2017-06-26 | 2017-10-20 | 国网江苏省电力公司经济技术研究院 | A kind of perforate electromagnetic shield design method of fast resolving electromagnetic field intensity distribution |
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| CN113092885A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Piezoresistive micro electric field sensor, preparation method thereof and electric field sensor |
| CN113092885B (en) * | 2021-04-09 | 2023-11-24 | 中国科学院空天信息创新研究院 | Piezoresistive miniature electric field sensor, preparation method thereof and electric field sensor |
| CN115586380A (en) * | 2022-11-03 | 2023-01-10 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
| CN115586380B (en) * | 2022-11-03 | 2024-01-23 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
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