CN102445604A - Miniature electric field sensor with special-shaped electrodes - Google Patents

Miniature electric field sensor with special-shaped electrodes Download PDF

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Publication number
CN102445604A
CN102445604A CN2010105041635A CN201010504163A CN102445604A CN 102445604 A CN102445604 A CN 102445604A CN 2010105041635 A CN2010105041635 A CN 2010105041635A CN 201010504163 A CN201010504163 A CN 201010504163A CN 102445604 A CN102445604 A CN 102445604A
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electrode
sensor
electric
guarded
exciting
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CN2010105041635A
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Chinese (zh)
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CN102445604B (en
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夏善红
杨鹏飞
彭春荣
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中国科学院电子学研究所
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Abstract

The invention discloses a miniature electric field sensor with special-shaped electrodes, which relates to the sensor technology. A sensor sensitive structure comprises a substrate, an exciting unit, a shielding electrode, an electric field induction electrode, an anchor point and other parts. The exciting unit comprises an exciting electrode and a support beam, which are symmetrically distributed at two sides of the sensor sensitive structure; and the shielding electrode and the electric field induction electrode are arranged in staggered form, and are distributed at a middle position region of the sensor sensitive structure. The exiting unit, the shielding electrode, the electric field induction electrode, the anchor point and the like are located in the same structural layer. The miniature electric field sensor provided by the invention comprises the special-shaped electric field induction electrode and shielding electrode, thus, charge changes of the electric field induction electrode in the sensor within unit time is increased, and the sensitivity of the miniature electric field sensor is improved.

Description

The shaped electrode micro field sensor

Technical field

The present invention relates to the electric-field sensor technical field, especially a kind of shaped electrode micro field sensor.

Background technology

Electric-field sensor is a device of measuring electric field intensity and electromotive force, and it is widely used in a plurality of fields such as national defence, Aero-Space, aerological sounding, electric power, earthquake prediction, scientific research and commercial production, has important effect.For example, at meteorological field, to ground and the monitoring that aerial atmospheric electric field changes, can obtain weather information accurately by electric-field sensor, thereby safety guarantee is provided for aircraft such as guided missile, satellite launch; In the commercial production field, utilize Potential Distributing and Electric Field Distribution in the electrostatic field sensor monitors industrial environment, help our the trouble-saving generation of in time adopting an effective measure; Through measuring electric system and electric equipment electric field on every side, can be used for malfunction monitoring and diagnosis or the like.This external electric field detects also has crucial application at aspects such as electrostatic defending, electromagnetic environment monitor and scientific researches.

Micro field sensor is based on one type of electric-field sensor of MEMS (MEMS) technology development, with respect to the electric-field sensor that adopts the preparation of traditional mechanical process technology, is the change of processing mode.Micro field sensor has that volume is little, cost is low, low in energy consumption, be easy to integrated, be easy to advantages such as batch process, satisfied the development trend and the demand of electric-field sensor well, further widened its application.

The micro field sensor of report mainly adopts surperficial polysilicon process preparation both at home and abroad at present, and the guarded electrode of transducer sensitive structure is positioned at the top of electric field induction electrode.Its ultimate principle is the periodic vibration through guarded electrode, the induced charge amount on the sensor sensing electrode is changed, thereby reach the external electric field testing goal.But receive the influence of guarded electrode edge effect, the electric field line that terminates on the sensor electric field induction electrode is less, and electric charge induction efficient is on the low side, thereby causes transducer sensitivity to be difficult to further improve.

Summary of the invention

The purpose of this invention is to provide a kind of shaped electrode micro field sensor; Its guarded electrode and induction electrode are positioned at same structural sheet; Electrode structure is special-shaped; Equipotential surface distorts around making full use of electrode, and the sensitivity that has further improved device is to overcome the weak point of existing micro field sensor.

For reaching said purpose, technical solution of the present invention is:

A kind of shaped electrode micro field sensor comprises sensor sensing unit, drive circuit unit and signal deteching circuit unit; Its sensor sensing unit comprises: substrate, exciting unit, guarded electrode, electric field induction electrode and anchor point;

Wherein, substrate is positioned at the transducer sensitive structure centre position, and the array that guarded electrode and electric field induction electrode are formed is fixed on substrate top surface, and guarded electrode and electric field induction electrode are alternately arranged;

At least two exciting units are fixed on substrate top surface, are positioned at the electrod-array periphery, are arranged symmetrically in the both sides of substrate respectively, and are electrically connected with guarded electrode respectively;

A plurality of anchor points are fixed on substrate top surface, are positioned at the electrod-array periphery, are arranged symmetrically in the both sides in addition of substrate respectively in twos, and are connected with the electric field induction electrode electricity respectively;

During work, at least two exciting units are electrically connected with drive circuit unit respectively, and a plurality of anchor points are electrically connected with the signal deteching circuit unit respectively.

Shown sensor, its substrate top surface has a dielectric isolation layer, and exciting unit, guarded electrode, electric field induction electrode, anchor point are fixed on the dielectric isolation layer upper surface, are positioned at same structural sheet.

Shown sensor, its said dielectric isolation layer is silicon dioxide layer.

Described sensor, its said exciting unit comprises exciting electrode and brace summer; Exciting electrode be static broach exciting electrode, thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode one of them, brace summer be single-beam, two-fold beam, cant beam, snakelike beam or crab ellbeam one of them.

Described sensor, its said guarded electrode and electric field induction electrode comprise crossbeam and electrode structure respectively; Wherein, electrode structure adopts the mode of structural support arm connection electrode array;

The crossbeam of the crossbeam of guarded electrode and electric field induction electrode is arranged in parallel, and structural support arm is connected with the crossbeam lateral vertical respectively, and electrod-array is connected with the structural support arm lateral vertical respectively; Structural support arm is parallel to each other and is arranged alternately, and electrod-array is crisscross arranged each other relatively;

The crossbeam two ends of guarded electrode are electrically connected with exciting unit respectively.

Described sensor, its said beam structure sway brace is that section is rectangle, parallelogram or Else Rule or irregular elongate in shape.

Described sensor, the electrode in its said electrod-array, its planform be step, trapezoidal, triangle, circle, semicircle or parallelogram one of them, or several kinds combination.

Described sensor, its said electrode structure, adopt serpentine configuration, trapezoidal serpentine configuration, stepped ramp type serpentine configuration one of them, or several kinds combination.

Described sensor, its said guarded electrode is identical with the electrode structure of electric field induction electrode, or different, adopts identical electrod-array, or adopts different electrod-arrays.

Described sensor, its said guarded electrode and electric field induction electrode structure arrangement have mixed arrangement, difference arrangement or non-difference arrangement.

Described sensor, the mode of operation of its said sensor be comprise resonance and non-resonant open loop mode, permanent width of cloth vibration mode or closed loop self-excitation mode one of them.

Described sensor, the mode of vibration of its said guarded electrode are horizontal cycle vibration, vertical cycle vibration or periodically twist one of them.

Described sensor; Its said sensor is when vertical cycle vibrates or periodically twist; The electrode structure of guarded electrode and electric field induction electrode is structural support arm one a side connection electrode array, or structural support arm both sides connection electrode array, or the combination of this dual mode.

Described sensor, its said sensor sensing unit, a sensing unit constitutes the one dimension electric-field sensor, and more than one sensing unit constitutes one dimension, two dimension or three-dimensional electric field sensor.

Described sensor, its said anchor point upper surface is provided with pad, is electrically connected with crossbeam, the signal deteching circuit unit of electric field induction electrode respectively through pad.

A kind of shaped electrode micro field sensor of the present invention, guarded electrode and electric field induction electrode are positioned at same structural sheet, utilize the electrode distortion of equipotential surface on every side, have improved the electric charge induction efficient of sensor electric field induction electrode; Adopting the shaped electrode structure is in order to increase electrode surface and near equipotential surface distortion thereof; Promptly increase the potential change gradient of electrode surface; Thereby increased the variable quantity of induced charge on the unit interval internal electric field induction electrode, the sensitivity that further improves micro field sensor.

A kind of shaped electrode micro field sensor of the present invention can the measuring stationary electric field, alternating field, can also be used for potential measurement.

Description of drawings

Fig. 1 is a kind of shaped electrode micro field sensor structural representation of the present invention;

Fig. 1 a is guarded electrode among Fig. 1, electric field induction electrode and the local enlarged diagram of fixed anchor point part;

Fig. 2 a is the step electrod-array scheme of electric field induction electrode and guarded electrode;

Fig. 2 b is the trapezoidal electrod-array scheme of electric field induction electrode and guarded electrode;

Fig. 2 c is the snakelike electrode structure scheme of electric field induction electrode and guarded electrode;

Fig. 3 a is the non-differential configuration arrangement of electric field induction electrode and guarded electrode;

Fig. 3 b is electric field induction electrode and guarded electrode mixed structure arrangement;

Fig. 3 c is the differential configuration arrangement of electric field induction electrode and guarded electrode.

Embodiment

Specify the present invention below in conjunction with accompanying drawing.

Fig. 1 is a shaped electrode micro field sensor structural representation of the present invention; Said sensor mainly comprises sensitive structure, drive circuit unit 6 and the signal deteching circuit unit 7 etc. of sensor; Wherein, the sensitive structure of said sensor mainly comprises parts such as substrate 1, exciting unit 2, guarded electrode 3, electric field induction electrode 4 and a plurality of anchor point 5.Exciting unit 2 is fixed on the left and right sides of substrate 1, and wherein exciting unit 2 comprises exciting electrode and brace summer; Guarded electrode 3 is fixed on the exciting unit 2 of the left and right sides through the crossbeam 32 of centre; Electric field induction electrode 4 is fixed on by the crossbeam 42 that is connected with anchor point 5 on substrate 1 zone in two exciting units, 2 centre positions, and wherein, the electrode structure of guarded electrode 3 and electric field induction electrode 4 is staggered; The output terminal of drive circuit unit 6 is connected with exciting unit 2, and drive circuit unit 6 drives exciting electrode and realizes the vibration of sensor mask electrode 3 horizontal cycles, makes sensor electric field induction electrode 4 produce the current signal of alternation; The input end of signal deteching circuit unit 7 is connected with pad 45 on the anchor point 5, and the demodulation of the AC signal of sensor electric field induction electrodes output is realized in signal deteching circuit unit 7.

To shaped electrode micro field sensor of the present invention; Wherein said a kind of structure is as shown in Figure 1: exciting unit 2 is arranged symmetrically in the left and right sides of transducer sensitive structure; Sensor adopts push-pull energisation mode, and purpose is in order to reduce the influence of driving voltage crosstalk noise; Certainly sensor also can adopt single end driver, promptly only arranges that at an end of transducer sensitive structure the exciting electrode in the exciting electrode unit 2 gets final product; The quantity of sensor excitation electrode can be the cascade of one or more or electrode; The exciting electrode of exciting unit 2 generally adopts the static broach exciting electrode, can certainly adopt the exciting electrode of thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode or alternate manner; Brace summer in the exciting unit 2 generally is the two-fold beam, can certainly be the brace summer of other type, for example, single-beam, cant beam, snakelike beam, crab ellbeam or Else Rule or irregular beam etc., the quantity of brace summer can be two or many.

As shown in Figure 1, anchor point 5 and substrate 1 are fixed through silicon dioxide layer, and silicon dioxide also can change other into and is fit to do the megohmite insulant that the MEMS insulation is isolated certainly; All structures such as exciting unit 2, guarded electrode 3, electric field induction electrode 4, fixed anchor point 5 are positioned at same structural sheet, and are parallel with substrate 1.

Shown in Fig. 1 a, guarded electrode 3 is made up of electrode structure 31 and crossbeam 32, and the electrode structure 31 of guarded electrode 3 comprises the stepped ramp type electrod-array 312 of structural support arm 311 and its side; Electric field induction electrode 4 is made up of electrode structure 41 and crossbeam 42, and electrode structure 41 comprises the stepped ramp type electrod-array 412 of structural support arm 411 and its side.Guarded electrode 3 connects two exciting units 2 through crossbeam 32 and is fixed on the centre position of sensitive structure; Electric field induction electrode 4 is connected with anchor point 5 through crossbeam 42.The structural support arm 311 of guarded electrode 3 and the structural support arm 411 of electrode structure 41 all are fixed on substrate 1 upper surface of two exciting units, 2 zone lines, and substrate 1 upper surface also is provided with a silicon dioxide insulator separation layer.The electrode structure of guarded electrode 3 and electric field induction electrode 4 alternately is arranged in parallel.

Electrode structure the present invention to guarded electrode 3 and electric field induction electrode 4 adopts the shaped electrode structure, shown in Fig. 2 a.The electrode structure 41 of electric field induction electrode 4 has adopted structural support arm 411 to connect the mode of stepped ramp type electrod-array 412, and the electrode structure 31 of guarded electrode 3 also adopts same frame mode, and promptly structural support arm 311 connects stepped ramp type electrod-array 312.Wherein, the stepped ramp type electrod-array also can be trapezoidal electrod-array 312,412, shown in Fig. 2 b; Can certainly be the electrod-array of other type, for example, the combination of structure such as triangle, circle, semicircle or parallelogram or different structure shape; The shape of said structural support arm is a rectangle, can certainly be parallelogram or Else Rule or irregular elongate in shape.The electrode structure of guarded electrode 3 and electric field induction electrode 4 can be identical, also can be different; The electrode structure of said guarded electrode 3 can adopt same electrod-array, also can adopt different electrod-arrays; The electrode structure of said electric field induction electrode 4 can adopt same electrod-array, also can adopt different electrod-arrays; The electrod-array of guarded electrode 3 and electric field induction electrode 4 is staggered each other to be spaced.The electrode structure 31 of guarded electrode 3 and the electrode structure 41 of electric field induction electrode 4 can also be serpentine configuration, shown in Fig. 2 c, or the distortion of serpentine configuration, for example, trapezoidal serpentine configuration, stepped ramp type serpentine configuration or irregular serpentine configuration etc.During work, 3 cycle of guarded electrode electric field shielding induction electrode 4, thus cause that the quantity of electric charge cycle changes on the electric field induction electrode 4, produce the induction current that is directly proportional with tested electric field.

To the structural arrangement mode example of the present invention of guarded electrode 3 and electric field induction electrode 4 three kinds; First kind of non-difference arrangement; Shown in Fig. 2 a, crossbeam 32 is positioned at the centre position of guarded electrode 3, and the electrode structure 41 of electric field induction electrode 4 is positioned at the both sides up and down of crossbeam 32; The electrode structure 411 and the electrode structure 412 that is positioned at the electric field induction electrode 4 of sensitive structure downside that are positioned at the electric field induction electrode 4 of sensitive structure upside are arranged in the same side of the electrode structure 31 of guarded electrode 3.Second kind of mixed arrangement; Shown in Fig. 2 b; The non-difference that is positioned at electric field induction electrode 4 and the guarded electrode 3 in sensitive structure left side is arranged and is arranged with the non-difference symmetrical arrangement of electric field induction electrode that is positioned at the sensitive structure right side 4 and guarded electrode 3 and to have constituted mixed arrangement, realizes that left and right sides electric field induction electrode 4 has differential signal output.The third differential mode arranges, shown in Fig. 2 c, the electrode structure 411 that is positioned at the sensitive structure upside and the electrode structure 422 that is positioned at the sensitive structure downside are arranged in the left and right sides adjacent with the electrode structure of guarded electrode 3 31.The guarded electrode 3 of sensor and the electrode structure of electric field induction electrode 4 also can adopt the arrangement of other type, have the induced charge of alternation to produce when needing only guarded electrode 3 horizontal vibrations on the electric field induction electrode 4.

The mode of vibration of electric-field sensor guarded electrode 3 of the present invention can be the horizontal cycle vibration, also can be the vibration of vertical cycle vibration or periodicity twisting or alternate manner.The horizontal cycle vibration is meant that the direction of vibration of guarded electrode 3 is parallel with substrate 1; The vertical cycle vibration is meant that the direction of vibration of guarded electrode 3 is vertical with substrate 1; Periodically twisting be meant guarded electrode 3 when vibration its side near substrate 1, otherwise opposite side away from substrate 1 or.As long as have the induced charge of alternation to produce on the electric field induction electrode 4 during guarded electrode 3 vibrations, any mode of vibration of guarded electrode 3 all can.

To vertical cycle vibration of the present invention or periodically twisting; The electrode structure of guarded electrode 3 and electric field induction electrode 4 can be the mode of structural support arm one side connection electrode array; Also can be the mode of structural support arm both sides connection electrode array, or the mixing of this dual mode.The electrod-array of sway brace both sides can be the same or different, the planform of electrode structure can be a kind of, two or more.

Working sensor pattern of the present invention can be open loop mode (comprising resonance and disresonance), permanent width of cloth vibration mode or closed loop self-excitation mode.Open loop mode is meant that micro field sensor is having no the mode of operation that guarded electrode 3 vibrated with the fixed cycle under the feedback control unit condition; Permanent width of cloth vibration mode is meant that sensor constantly changes driving voltage through feedback control unit and makes the mode of operation of guarded electrode 3 with constant amplitude vibration; The closed loop self-excitation mode is meant that sensor constantly changes excitation frequency through feedback control unit and makes the mode of operation of guarded electrode 3 with constant amplitude vibration.

During the work of shaped electrode micro field sensor, guarded electrode 3 is fixed on zero potential or non-zero reference potential; Drive circuit unit 6 is connected with exciting unit 2, thereby drives guarded electrode 3 periodic vibrations; Pad 45 on the anchor point of signal deteching circuit unit 7 and stationary electric field induction electrode 4 is connected, the detecting sensor output current, thus detect the size of tested electric field intensity.

The output signal of electric field induction electrode 4 of the present invention carries out resolving and extracting of electric field signal through signal deteching circuit unit 7.Wherein, the principle of work of signal deteching circuit unit 7 adopts based on the weak signal of phase-sensitive detection and extracts circuit, should comprise mainly that charge amplifier, difference channel, buffering amplification, gain control, phase demodulation circuit and high-pass and low-pass filter etc. partly form.

Preparation to shaped electrode micro field sensor sensitive structure of the present invention; The present invention can adopt the SOIMUMPs technological process of MEMSCAP company; Also can adopt other MEMS processing technology; As long as can guarantee exciting unit 2, guarded electrode 3, all structures such as electric field induction electrode 4, fixed anchor point 5 are at same structural sheet, and any MEMS technology all can prepare.

Although come to show especially and introduced the present invention with reference to its exemplary embodiment; Yet those having ordinary skill in the art will appreciate that; Under the prerequisite that does not depart from the defined the spirit and scope of the present invention of claim, can carry out revising on the various forms He on the details.

Claims (15)

1. a shaped electrode micro field sensor comprises sensor sensing unit, drive circuit unit (6) and signal deteching circuit unit (7); It is characterized in that the sensor sensing unit comprises: substrate (1), exciting unit (2), guarded electrode (3), electric field induction electrode (4) and anchor point (5);
Wherein, substrate (1) is positioned at the transducer sensitive structure centre position, and the array that guarded electrode (3) and electric field induction electrode (4) are formed is fixed on substrate (1) upper surface, and guarded electrode (3) and electric field induction electrode (4) are alternately arranged;
At least two exciting units (2) are fixed on substrate (1) upper surface, are positioned at the electrod-array periphery, are arranged symmetrically in the both sides of substrate (1) respectively, and are electrically connected with guarded electrode (3) respectively;
A plurality of anchor points (5) are fixed on substrate (1) upper surface, are positioned at the electrod-array periphery, are arranged symmetrically in the both sides in addition of substrate (1) respectively in twos, and are electrically connected with electric field induction electrode (4) respectively;
During use, at least two exciting units (2) are electrically connected with drive circuit unit (6) respectively, and a plurality of anchor points (5) are electrically connected with signal deteching circuit unit (7) respectively.
2. according to the sensor shown in the claim 1; It is characterized in that; Said exciting unit (2), guarded electrode (3), electric field induction electrode (4), anchor point (5) are fixed on substrate (1) upper surface; Substrate (1) upper surface has a dielectric isolation layer, and exciting unit (2), guarded electrode (3), electric field induction electrode (4), anchor point (5) are fixed on the dielectric isolation layer upper surface, are positioned at same structural sheet.
3. according to the sensor shown in the claim 2, it is characterized in that said dielectric isolation layer is silicon dioxide layer.
4. sensor according to claim 1 is characterized in that, said exciting unit (2) comprises exciting electrode and brace summer; Exciting electrode be static broach exciting electrode, thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode one of them, brace summer be single-beam, two-fold beam, cant beam, snakelike beam or crab ellbeam one of them.
5. sensor according to claim 1 is characterized in that, said guarded electrode (3) and electric field induction electrode (4) comprise crossbeam (32,42) and electrode structure (31,41) respectively; Wherein, electrode structure (31,41) adopts the mode of structural support arm (311,411) connection electrode array (312,412);
The crossbeam (32) of guarded electrode (3) and the crossbeam (42) of electric field induction electrode (4) are arranged in parallel; Structural support arm (311,411) is connected with crossbeam (32,42) lateral vertical respectively, and electrod-array (312,412) is connected with structural support arm (311,411) lateral vertical respectively; Be parallel to each other is arranged alternately structural support arm (311,411), and electrod-array (312,412) is crisscross arranged each other relatively;
Crossbeam (32) two ends of guarded electrode (3) are electrically connected with exciting unit (2) respectively.
6. sensor according to claim 5 is characterized in that, said crossbeam (32,42) structural support arm (311,411) is that section is rectangle, parallelogram or Else Rule or irregular elongate in shape.
7. sensor according to claim 5 is characterized in that, the electrode in the said electrod-array (312,412), its planform be step, trapezoidal, triangle, circle, semicircle or parallelogram one of them, or several kinds combination.
8. sensor according to claim 5 is characterized in that, said electrode structure (31,41), adopt serpentine configuration, trapezoidal serpentine configuration, stepped ramp type serpentine configuration one of them, or several kinds combination.
9. according to claim 5,7 or 8 described sensors, it is characterized in that said guarded electrode (3) is identical with the electrode structure of electric field induction electrode (4), or different, adopt identical electrod-array, or adopt different electrod-arrays.
10. according to claim 1 or 5 described sensors, it is characterized in that said guarded electrode (3) and electric field induction electrode (4) structural arrangement mode have mixed arrangement, difference arrangement or non-difference arrangement.
11. sensor according to claim 1 is characterized in that, the mode of operation of said sensor be comprise resonance and non-resonant open loop mode, permanent width of cloth vibration mode or closed loop self-excitation mode one of them.
12. sensor according to claim 1 is characterized in that, the mode of vibration of said guarded electrode (3) is horizontal cycle vibration, vertical cycle vibration or periodically twists one of them.
13. sensor according to claim 12; It is characterized in that; Said sensor is when vertical cycle vibrates or periodically twist; The electrode structure of guarded electrode (3) and electric field induction electrode (4) is structural support arm (311, a 411) side connection electrode array, or structural support arm (311,411) both sides connection electrode array, or the combination of this dual mode.
14. sensor according to claim 1 is characterized in that, said sensor sensing unit, and a sensing unit constitutes the one dimension electric-field sensor, and more than one sensing unit constitutes one dimension, two dimension or three-dimensional electric field sensor.
15. sensor according to claim 1 is characterized in that, said anchor point (5) upper surface is provided with pad (45), is electrically connected with crossbeam (42), signal deteching circuit unit (7) of electric field induction electrode (4) respectively through pad (45).
CN2010105041635A 2010-09-30 2010-09-30 Miniature electric field sensor with special-shaped electrodes CN102445604B (en)

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CN103630762A (en) * 2013-07-26 2014-03-12 中国科学院电子学研究所 Miniature three-dimension electric field sensor based on flexible substrate and preparation method thereof
CN103675481A (en) * 2013-10-18 2014-03-26 中国科学院电子学研究所 Piezoelectric cantilever beam type mini electric field sensor
CN103675480A (en) * 2013-10-18 2014-03-26 中国科学院电子学研究所 Mini electric field sensor with double-clamped piezoelectric beams
CN103713203A (en) * 2013-12-19 2014-04-09 清华大学 Miniature electric field sensor structure
CN104459351A (en) * 2014-12-15 2015-03-25 中国科学院电子学研究所 Pendulous microelectric field sensor
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CN106093605A (en) * 2016-06-08 2016-11-09 中国科学院电子学研究所 A kind of torsional mode electric-field sensor
CN107907749A (en) * 2017-11-24 2018-04-13 中国科学院电子学研究所 A kind of three-dimensional electric field sensor of low inter-axis coupling
CN108508284A (en) * 2018-03-26 2018-09-07 中国科学院电子学研究所 A kind of mutual shielded electric field sensor based on twisting vibration
CN109581082A (en) * 2018-12-25 2019-04-05 中国科学院电子学研究所 Trigone structure mini three-dimensional electric field sensor and technology of preparing based on micro-group dress

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Publication number Priority date Publication date Assignee Title
CN102963857A (en) * 2012-10-17 2013-03-13 东南大学 Micro electro mechanical (MEM) comb tooth mechanism capable of modulating backlash under electromagnetic drive
CN102963857B (en) * 2012-10-17 2015-04-15 东南大学 Micro electro mechanical (MEM) comb tooth mechanism capable of modulating backlash under electromagnetic drive
CN103630762A (en) * 2013-07-26 2014-03-12 中国科学院电子学研究所 Miniature three-dimension electric field sensor based on flexible substrate and preparation method thereof
CN103675481A (en) * 2013-10-18 2014-03-26 中国科学院电子学研究所 Piezoelectric cantilever beam type mini electric field sensor
CN103675480A (en) * 2013-10-18 2014-03-26 中国科学院电子学研究所 Mini electric field sensor with double-clamped piezoelectric beams
CN103675481B (en) * 2013-10-18 2016-06-15 中国科学院电子学研究所 Piezoelectric cantilever beam type mini electric field sensor
CN103713203A (en) * 2013-12-19 2014-04-09 清华大学 Miniature electric field sensor structure
CN103713203B (en) * 2013-12-19 2016-04-20 清华大学 A kind of Miniature electric field sensor structure
CN104459351A (en) * 2014-12-15 2015-03-25 中国科学院电子学研究所 Pendulous microelectric field sensor
CN105911370A (en) * 2016-04-28 2016-08-31 中国科学院电子学研究所 Metal microstructure electric field sensor
CN106093605A (en) * 2016-06-08 2016-11-09 中国科学院电子学研究所 A kind of torsional mode electric-field sensor
CN107907749A (en) * 2017-11-24 2018-04-13 中国科学院电子学研究所 A kind of three-dimensional electric field sensor of low inter-axis coupling
CN108508284A (en) * 2018-03-26 2018-09-07 中国科学院电子学研究所 A kind of mutual shielded electric field sensor based on twisting vibration
CN109581082A (en) * 2018-12-25 2019-04-05 中国科学院电子学研究所 Trigone structure mini three-dimensional electric field sensor and technology of preparing based on micro-group dress
CN109581082B (en) * 2018-12-25 2020-09-25 中国科学院电子学研究所 Triangular structure micro three-dimensional electric field sensor based on micro assembly and preparation technology

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