CN102445604B - Miniature electric field sensor with special-shaped electrodes - Google Patents
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- CN102445604B CN102445604B CN2010105041635A CN201010504163A CN102445604B CN 102445604 B CN102445604 B CN 102445604B CN 2010105041635 A CN2010105041635 A CN 2010105041635A CN 201010504163 A CN201010504163 A CN 201010504163A CN 102445604 B CN102445604 B CN 102445604B
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Abstract
The invention discloses a miniature electric field sensor with special-shaped electrodes, which relates to the sensor technology. A sensor sensitive structure comprises a substrate, an exciting unit, a shielding electrode, an electric field induction electrode, an anchor point and other parts. The exciting unit comprises an exciting electrode and a support beam, which are symmetrically distributed at two sides of the sensor sensitive structure; and the shielding electrode and the electric field induction electrode are arranged in staggered form, and are distributed at a middle position region of the sensor sensitive structure. The exiting unit, the shielding electrode, the electric field induction electrode, the anchor point and the like are located in the same structural layer. The miniature electric field sensor provided by the invention comprises the special-shaped electric field induction electrode and shielding electrode, thus, charge changes of the electric field induction electrode in the sensor within unit time is increased, and the sensitivity of the miniature electric field sensor is improved.
Description
Technical field
The present invention relates to the electric-field sensor technical field, especially a kind of Miniature electric field sensor with special-shaped electrodes.
Background technology
Electric-field sensor is the device of measuring electric field intensity and electromotive force, and it is widely used in a plurality of fields such as national defence, Aero-Space, aerological sounding, electric power, earthquake prediction, scientific research and commercial production, has very important effect.For example, at meteorological field, the monitoring by electric-field sensor to ground and aerial atmospheric electric field variation, can obtain weather information accurately, thereby provide safety guarantee for the vehicle launchs such as guided missile, satellite go up to the air; At field of industrial production, utilize Potential Distributing and Electric Field Distribution in electrostatic field sensor monitoring industrial environment, contribute to our the trouble-saving generation of adopting an effective measure in time; By measuring electric system and electric equipment electric field on every side, can be used for fault detection and diagnosis etc.This external electric field detects also has very important application at aspects such as electrostatic defending, electromagnetic environment monitor and scientific researches.
Micro field sensor is based on a class electric-field sensor of MEMS (micro electro mechanical system) (MEMS) technology development, with respect to the electric-field sensor that adopts traditional Machining Technology to prepare, is the change of processing mode.Micro field sensor has that volume is little, cost is low, low in energy consumption, be easy to integrated, be easy to the advantages such as batch production, met well development trend and the demand of electric-field sensor, further widened its application.
The micro field sensor of report mainly adopts surperficial polysilicon process preparation both at home and abroad at present, and the guarded electrode of transducer sensitive structure is positioned at the top of electric field induction electrode.Its ultimate principle is the periodic vibration by guarded electrode, the induced charge amount on the sensor sensing electrode is changed, thereby reach the external electric field testing goal.But be subject to the impact of guarded electrode edge effect, the electric field line terminated on sensor electric field induction electrode is less, and charge induced efficiency is on the low side, thereby causes transducer sensitivity to be difficult to further improve.
Summary of the invention
The purpose of this invention is to provide a kind of Miniature electric field sensor with special-shaped electrodes, its guarded electrode and induction electrode are positioned at the same structure layer, the electrode structure abnormal shape, around taking full advantage of electrode, equipotential surface distorts, further improved the sensitivity of device, to overcome the weak point of existing micro field sensor.
For reaching described purpose, technical solution of the present invention is:
A kind of Miniature electric field sensor with special-shaped electrodes, comprise sensor sensing unit, drive circuit unit and signal deteching circuit unit; Its sensor sensing unit comprises: substrate, exciting unit, guarded electrode, electric field induction electrode and anchor point;
Wherein, substrate is positioned at the transducer sensitive structure centre position, and the array that guarded electrode and electric field induction electrode form is fixed on substrate top surface, guarded electrode and electric field induction electrode alternative arrangement;
At least two exciting units are fixed on substrate top surface, are positioned at the electrod-array periphery, are arranged symmetrically in respectively the both sides of substrate, and with guarded electrode, are electrically connected to respectively;
A plurality of anchor points are fixed on substrate top surface, are positioned at the electrod-array periphery, are arranged symmetrically in twos respectively the another both sides of substrate, and with the electric field induction electrode, are electrically connected to respectively;
During work, at least two exciting units are electrically connected to drive circuit unit respectively, and a plurality of anchor points are electrically connected to the signal deteching circuit unit respectively.
Shown sensor, its substrate top surface has a dielectric isolation layer, and exciting unit, guarded electrode, electric field induction electrode, anchor point are fixed on the dielectric isolation layer upper surface, are positioned at the same structure layer.
Shown sensor, its described dielectric isolation layer, be silicon dioxide layer.
Described sensor, its described exciting unit, comprise exciting electrode and brace summer; Exciting electrode be static broach exciting electrode, thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode one of them, brace summer be single-beam, two-fold beam, cant beam, snakelike beam or crab ellbeam one of them.
Described sensor, its described guarded electrode and electric field induction electrode comprise respectively crossbeam and electrode structure; Wherein, electrode structure adopts the mode of structural support arm connecting electrode array;
The crossbeam of the crossbeam of guarded electrode and electric field induction electrode is arranged in parallel, and structural support arm is connected with the crossbeam lateral vertical respectively, and electrod-array is connected with the structural support arm lateral vertical respectively; Structural support arm is parallel to each other and is arranged alternately, and electrod-array is crisscross arranged mutually relatively;
The crossbeam two ends of guarded electrode are electrically connected to exciting unit respectively.
Described sensor, its described beam structure sway brace, be that section is rectangle, parallelogram or Else Rule or irregular elongate in shape.
Described sensor, the electrode in its described electrod-array, its planform be step, trapezoidal, triangle, circle, semicircle or parallelogram one of them, or several combination.
Described sensor, its described electrode structure, adopt serpentine configuration, trapezoidal serpentine configuration, stepped ramp type serpentine configuration one of them, or several combination.
Described sensor, its described guarded electrode is identical with the electrode structure of electric field induction electrode, or different, adopts identical electrod-array, or adopts different electrod-arrays.
Described sensor, its described guarded electrode and electric field induction electrode structure arrangement have mixed arrangement, difference arrangement or non-difference arrangement.
Described sensor, the mode of operation of its described sensor be comprise resonance and non-resonant open loop mode, permanent width vibration mode or closed loop self-excitation mode one of them.
Described sensor, the mode of vibration of its described guarded electrode is horizontal cycle vibration, vertical cycle vibration or periodically twists one of them.
Described sensor, its described sensor is when vertical cycle vibrates or periodically twist, the electrode structure of guarded electrode and electric field induction electrode is structural support arm one side connecting electrode array, or structural support arm both sides connecting electrode array, or the combination of these two kinds of modes.
Described sensor, its described sensor sensing unit, a sensing unit forms the one dimension electric-field sensor, and more than one sensing unit forms one dimension, two dimension or three-dimensional electric field sensor.
Described sensor, its described anchor point upper surface is provided with pad, by pad, with crossbeam, the signal deteching circuit unit of electric field induction electrode, is electrically connected to respectively.
A kind of Miniature electric field sensor with special-shaped electrodes of the present invention, guarded electrode and electric field induction electrode are positioned at the same structure layer, utilize the electrode distortion of equipotential surface on every side, have improved the charge induced efficiency of sensor electric field induction electrode; Adopting the shaped electrode structure is in order to increase electrode surface and near equipotential surface distortion thereof, increase the potential change gradient of electrode surface, thereby increased the variable quantity of induced charge on unit interval internal electric field induction electrode, the sensitivity that further improves micro field sensor.
A kind of Miniature electric field sensor with special-shaped electrodes of the present invention, can the measurement of electrostatic field, alternating field, can also be for potential measurement.
The accompanying drawing explanation
Fig. 1 is a kind of Miniature electric field sensor with special-shaped electrodes structural representation of the present invention;
Fig. 1 a is guarded electrode in Fig. 1, electric field induction electrode and the local enlarged diagram of fixed anchor point part;
The step electrod-array scheme that Fig. 2 a is electric field induction electrode and guarded electrode;
The trapezoidal electrod-array scheme that Fig. 2 b is electric field induction electrode and guarded electrode;
The snakelike electrode structure scheme that Fig. 2 c is electric field induction electrode and guarded electrode;
The non-differential configuration arrangement that Fig. 3 a is electric field induction electrode and guarded electrode;
Fig. 3 b is electric field induction electrode and guarded electrode mixed structure arrangement;
The differential configuration arrangement that Fig. 3 c is electric field induction electrode and guarded electrode.
Embodiment
Illustrate the present invention below in conjunction with accompanying drawing.
Fig. 1 is Miniature electric field sensor with special-shaped electrodes structural representation of the present invention, described sensor mainly comprises sensitive structure, drive circuit unit 6 and the signal deteching circuit unit 7 etc. of sensor, wherein, the sensitive structure of described sensor mainly comprises the parts such as substrate 1, exciting unit 2, guarded electrode 3, electric field induction electrode 4 and a plurality of anchor point 5.Exciting unit 2 is fixed on the left and right sides of substrate 1, and wherein exciting unit 2 comprises exciting electrode and brace summer; Guarded electrode 3 is fixed on the exciting unit 2 of the left and right sides by middle crossbeam 32; Substrate 1 zone that electric field induction electrode 4 is fixed on two exciting unit 2 centre positions by the crossbeam 42 be connected with anchor point 5 is upper, and wherein, the electrode structure of guarded electrode 3 and electric field induction electrode 4 is staggered; The output terminal of drive circuit unit 6 is connected with exciting unit 2, and drive circuit unit 6 drives exciting electrode to realize the 3 horizontal cycle vibrations of sensor mask electrode, makes sensor electric field induction electrode 4 produce the current signal of alternation; The input end of signal deteching circuit unit 7 is connected with the pad 45 on anchor point 5, and the demodulation of the AC signal of sensor electric field induction electrode output is realized in signal deteching circuit unit 7.
For Miniature electric field sensor with special-shaped electrodes of the present invention, wherein said a kind of structure is as shown in Figure 1: exciting unit 2 is arranged symmetrically in the left and right sides of transducer sensitive structure, sensor adopts push-pull energisation mode, and purpose is in order to reduce the impact of driving voltage crosstalk noise; Certainly sensor also can adopt single end driver, and only the exciting electrode in an end of transducer sensitive structure is arranged exciting electrode unit 2 gets final product; The quantity of sensor excitation electrode can be the cascade of one or more or electrode; The exciting electrode of exciting unit 2 generally adopts the static broach exciting electrode, can certainly adopt the exciting electrode of thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode or alternate manner; Brace summer in exciting unit 2 is generally the two-fold beam, can certainly be the brace summer of other type, for example, single-beam, cant beam, snakelike beam, crab ellbeam or Else Rule or irregular beam etc., the quantity of brace summer can be two or many.
As shown in Figure 1, anchor point 5 is fixed by silicon dioxide layer with substrate 1, and silicon dioxide also can change other megohmite insulant that is applicable to doing MEMS insulation isolation into certainly; All structures such as exciting unit 2, guarded electrode 3, electric field induction electrode 4, fixed anchor point 5 are positioned at the same structure layer, parallel with substrate 1.
As shown in Figure 1a, guarded electrode 3 consists of electrode structure 31 and crossbeam 32, and the electrode structure 31 of guarded electrode 3 comprises the stepped ramp type electrod-array 312 of structural support arm 311 and its side; Electric field induction electrode 4 consists of electrode structure 41 and crossbeam 42, and electrode structure 41 comprises the stepped ramp type electrod-array 412 of structural support arm 411 and its side.Guarded electrode 3 connects two exciting units 2 by crossbeam 32 and is fixed on the centre position of sensitive structure; Electric field induction electrode 4 is connected with anchor point 5 by crossbeam 42.The structural support arm 311 of guarded electrode 3 and the structural support arm 411 of electrode structure 41 all are fixed on substrate 1 upper surface of two exciting unit 2 zone lines, and substrate 1 upper surface also is provided with a silicon dioxide insulator separation layer.The electrode structure of guarded electrode 3 and electric field induction electrode 4 alternately is arranged in parallel.
Electrode structure the present invention for guarded electrode 3 and electric field induction electrode 4 adopts the shaped electrode structure, as shown in Figure 2 a.The electrode structure 41 of electric field induction electrode 4 has adopted structural support arm 411 to connect the mode of stepped ramp type electrod-array 412, and the electrode structure 31 of guarded electrode 3 also adopts same frame mode, and structural support arm 311 connects stepped ramp type electrod-array 312.Wherein, the stepped ramp type electrod-array can be also trapezoidal electrod-array 312,412, as shown in Figure 2 b; Can certainly be the electrod-array of other type, for example, the combination of the structure such as triangle, circle, semicircle or parallelogram or different structure shape; The shape of described structural support arm is rectangle, can certainly be parallelogram or Else Rule or irregular elongate in shape.The electrode structure of guarded electrode 3 and electric field induction electrode 4 can be identical, also can be different; The electrode structure of described guarded electrode 3 can adopt same electrod-array, also can adopt different electrod-arrays; The electrode structure of described electric field induction electrode 4 can adopt same electrod-array, also can adopt different electrod-arrays; The electrod-array of guarded electrode 3 and electric field induction electrode 4 is staggered being spaced each other.The electrode structure 31 of guarded electrode 3 and the electrode structure 41 of electric field induction electrode 4 can also be serpentine configuration, as shown in Figure 2 c, or the distortion of serpentine configuration, for example, trapezoidal serpentine configuration, stepped ramp type serpentine configuration or irregular serpentine configuration etc.During work, 3 cycle of guarded electrode electric field shielding induction electrode 4, thus cause on electric field induction electrode 4 that the quantity of electric charge cycle changes, and produces the induction current be directly proportional to tested electric field.
For the structural arrangement mode example of the present invention of guarded electrode 3 and electric field induction electrode 4 three kinds, the non-difference arrangement of the first, as shown in Figure 2 a, crossbeam 32 is positioned at the centre position of guarded electrode 3, and the electrode structure 41 of electric field induction electrode 4 is positioned at the both sides up and down of crossbeam 32; The electrode structure 411 and the electrode structure 412 that is positioned at the electric field induction electrode 4 of sensitive structure downside that are positioned at the electric field induction electrode 4 of sensitive structure upside are arranged in the same side of the electrode structure 31 of guarded electrode 3.The second mixed arrangement, as shown in Figure 2 b, be positioned at the electric field induction electrode 4 in sensitive structure left side and the non-difference layout of guarded electrode 3 and arrange and formed mixed arrangement with the non-difference symmetrical arrangement of the electric field induction electrode 4 that is positioned at the sensitive structure right side and guarded electrode 3, realize that left and right sides electric field induction electrode 4 has differential signal output.The third differential mode layout, as shown in Figure 2 c, the electrode structure 411 that is positioned at the sensitive structure upside is arranged in the left and right sides adjacent with the electrode structure 31 of guarded electrode 3 with the electrode structure 422 that is positioned at the sensitive structure downside.The guarded electrode 3 of sensor and the electrode structure of electric field induction electrode 4 also can adopt the arrangement of other type, when needing only guarded electrode 3 horizontal vibration, on electric field induction electrode 4, have the induced charge of alternation to produce.
The mode of vibration of electric-field sensor guarded electrode 3 of the present invention can be the horizontal cycle vibration, can be also the vibration of vertical cycle vibration or periodicity twisting or alternate manner.The horizontal cycle vibration refers to that the direction of vibration of guarded electrode 3 is parallel with substrate 1; The vertical cycle vibration refers to that the direction of vibration of guarded electrode 3 is vertical with substrate 1; Periodically twisting refer to guarded electrode 3 when vibration its side near substrate 1, otherwise opposite side away from substrate 1 or.As long as there is the induced charge of alternation to produce during guarded electrode 3 vibration on electric field induction electrode 4, any mode of vibration of guarded electrode 3 all can.
For vertical cycle vibration of the present invention or periodically twisting, the electrode structure of guarded electrode 3 and electric field induction electrode 4 can be the mode of structural support arm one side connecting electrode array, can be also the mode of structural support arm both sides connecting electrode array, or the mixing of these two kinds of modes.The electrod-array of sway brace both sides can be the same or different, the planform of electrode structure can be a kind of, two or more.
Working sensor pattern of the present invention can be open loop mode (comprising resonance and disresonance), permanent width vibration mode or closed loop self-excitation mode.Open loop mode refer to micro field sensor under without any the feedback control unit condition guarded electrode 3 with the mode of operation of fixed cycle vibration; Permanent width vibration mode refers to that sensor constantly changes driving voltage by feedback control unit and makes the mode of operation of guarded electrode 3 with constant amplitude vibration; The closed loop self-excitation mode refers to that sensor constantly changes excitation frequency by feedback control unit and makes the mode of operation of guarded electrode 3 with constant amplitude vibration.
During Miniature electric field sensor with special-shaped electrodes work, guarded electrode 3 is fixed on zero potential or non-zero reference potential; Drive circuit unit 6 is connected with exciting unit 2, thus 3 periodic vibrations of driven shield electrode; Pad 45 on the anchor point of signal deteching circuit unit 7 and stationary electric field induction electrode 4 is connected, the detecting sensor output current, thus detect the size of tested electric field intensity.
The output signal of electric field induction electrode 4 of the present invention is carried out resolving and extracting of electric field signal by signal deteching circuit unit 7.Wherein, the principle of work of signal deteching circuit unit 7 adopts the weak signal based on phase-sensitive detection to extract circuit, should mainly comprise that charge amplifier, difference channel, Hyblid Buffer Amplifier, gain control, phase-sensitive demodulating circuits and high-pass and low-pass filter etc. partly form.
Preparation for Miniature electric field sensor with special-shaped electrodes sensitive structure of the present invention, the present invention can adopt the SOIMUMPs technological process of MEMSCAP company, also can adopt other MEMS processing technology, as long as can guarantee exciting unit 2, guarded electrode 3, all structures such as electric field induction electrode 4, fixed anchor point 5 are at the same structure layer, all can prepare by any MEMS technique.
Although with reference to its exemplary embodiment, shown especially and introduced the present invention, yet those having ordinary skill in the art will appreciate that, under the prerequisite that does not depart from the defined the spirit and scope of the present invention of claim, can carry out revising on various forms He on details.
Claims (14)
1. a Miniature electric field sensor with special-shaped electrodes, comprise sensor sensing unit, drive circuit unit (6) and signal deteching circuit unit (7); It is characterized in that, the sensor sensing unit comprises: substrate (1), exciting unit (2), guarded electrode (3), electric field induction electrode (4) and anchor point (5);
Wherein, substrate (1) is positioned at the transducer sensitive structure centre position, the array that guarded electrode (3) and electric field induction electrode (4) form is fixed on substrate (1) upper surface, guarded electrode (3) and electric field induction electrode (4) alternative arrangement;
At least two exciting units (2) are fixed on substrate (1) upper surface, are positioned at the electrod-array periphery, are arranged symmetrically in respectively the both sides of substrate (1), and with guarded electrode (3), are electrically connected to respectively;
A plurality of anchor points (5) are fixed on substrate (1) upper surface, are positioned at the electrod-array periphery, are arranged symmetrically in twos respectively the another both sides of substrate (1), and with electric field induction electrode (4), are electrically connected to respectively;
During use, at least two exciting units (2) are electrically connected to drive circuit unit (6) respectively, and a plurality of anchor points (5) are electrically connected to signal deteching circuit unit (7) respectively;
Described guarded electrode (3) and electric field induction electrode (4) comprise respectively crossbeam (32,42) and electrode structure (31,41); Wherein, electrode structure (31,41) adopts the mode of structural support arm (311,411) connecting electrode array (312,412);
The crossbeam (32) of guarded electrode (3) and the crossbeam (42) of electric field induction electrode (4) are arranged in parallel, structural support arm (311,411) is connected with crossbeam (32,42) lateral vertical respectively, and electrod-array (312,412) is connected with structural support arm (311,411) lateral vertical respectively; Be parallel to each other is arranged alternately structural support arm (311,411), and electrod-array (312,412) is crisscross arranged mutually relatively;
Crossbeam (32) two ends of guarded electrode (3) are electrically connected to exciting unit (2) respectively.
2. according to the sensor shown in claim 1, it is characterized in that, described exciting unit (2), guarded electrode (3), electric field induction electrode (4), anchor point (5) are fixed on substrate (1) upper surface, substrate (1) upper surface has a dielectric isolation layer, exciting unit (2), guarded electrode (3), electric field induction electrode (4), anchor point (5) are fixed on the dielectric isolation layer upper surface, are positioned at the same structure layer.
3. according to the sensor shown in claim 2, it is characterized in that described dielectric isolation layer is silicon dioxide layer.
4. sensor according to claim 1, is characterized in that, described exciting unit (2), comprise exciting electrode and brace summer; Exciting electrode be static broach exciting electrode, thermal excitation electrode, electric magnetization electrode or piezoelectric excitation electrode one of them, brace summer be single-beam, two-fold beam, cant beam, snakelike beam or crab ellbeam one of them.
5. sensor according to claim 1, is characterized in that, described crossbeam (32,42) or described structural support arm (311,411) are that section is rectangle, parallelogram or Else Rule or irregular elongate in shape.
6. sensor according to claim 1, is characterized in that, the electrode in described electrod-array (312,412), its planform be step, trapezoidal, triangle, circle, semicircle or parallelogram one of them, or several combination.
7. sensor according to claim 1, is characterized in that, described electrode structure (31,41), adopt serpentine configuration, trapezoidal serpentine configuration, stepped ramp type serpentine configuration one of them, or several combination.
8. according to claim 1,6 or 7 described sensors, it is characterized in that, described guarded electrode (3) is identical with the electrode structure of electric field induction electrode (4), or different, adopts identical electrod-array, or adopts different electrod-arrays.
9. sensor according to claim 1, is characterized in that, described guarded electrode (3) and electric field induction electrode (4) structural arrangement mode have mixed arrangement, difference arrangement or non-difference arrangement.
10. sensor according to claim 1, is characterized in that, the mode of operation of described sensor be comprise resonance and non-resonant open loop mode, permanent width vibration mode or closed loop self-excitation mode one of them.
11. sensor according to claim 1, is characterized in that, the mode of vibration of described guarded electrode (3) is horizontal cycle vibration, vertical cycle vibration or periodically twists one of them.
12. sensor according to claim 11, it is characterized in that, described sensor is when vertical cycle vibrates or periodically twist, the electrode structure of guarded electrode (3) and electric field induction electrode (4) is structural support arm (311, a 411) side connecting electrode array, or structural support arm (311,411) both sides connecting electrode array, or the combination of these two kinds of modes.
13. sensor according to claim 1, is characterized in that, described sensor sensing unit, and a sensing unit forms the one dimension electric-field sensor, and more than one sensing unit forms one dimension, two dimension or three-dimensional electric field sensor.
14. sensor according to claim 1, it is characterized in that, described anchor point (5) upper surface is provided with pad (45), by pad (45), with crossbeam (42), signal deteching circuit unit (7) of electric field induction electrode (4), is electrically connected to respectively.
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| CN112540239B (en) * | 2019-09-20 | 2022-03-18 | 中国科学院电子学研究所 | Multi-structure coupling-based miniature electric field sensor and preparation method thereof |
| CN113109636B (en) * | 2021-03-29 | 2022-06-17 | 中国科学院空天信息创新研究院 | Single-chip three-dimensional electric field sensor |
| CN114113813B (en) * | 2021-11-24 | 2022-06-28 | 北京中科飞龙传感技术有限责任公司 | Self-adaptive MEMS electric field sensor and structure thereof |
| CN114778958A (en) * | 2022-03-15 | 2022-07-22 | 重庆大学 | Piezoelectric drive-based field-grinding type MEMS electric field sensor |
| CN115524544B (en) * | 2022-11-24 | 2023-03-14 | 西安交通大学 | Piezoelectric-driven horizontal resonant micro electric field sensor and working method thereof |
| CN116654862B (en) * | 2023-05-18 | 2024-06-18 | 北京科技大学 | Single-chip MEMS three-dimensional electric field sensor with double vibration modes |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1831545A (en) * | 2005-03-07 | 2006-09-13 | 中国科学院电子学研究所 | Static broach exciting difference detection type miniature electric field sensor |
| CN101685119A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院电子学研究所 | Resonance miniature electric field sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004294351A (en) * | 2003-03-28 | 2004-10-21 | Canon Inc | Electric potential sensor and image forming apparatus |
| JP2006162457A (en) * | 2004-12-08 | 2006-06-22 | Canon Inc | Electric potential measuring device and image forming apparatus |
-
2010
- 2010-09-30 CN CN2010105041635A patent/CN102445604B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1831545A (en) * | 2005-03-07 | 2006-09-13 | 中国科学院电子学研究所 | Static broach exciting difference detection type miniature electric field sensor |
| CN101685119A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院电子学研究所 | Resonance miniature electric field sensor |
Non-Patent Citations (2)
| Title |
|---|
| 彭春荣等.新型推挽激励的谐振式微机械静电场传感器.《纳米技术与精密工程》.2010,第8卷(第4期),第341页摘要. |
| 新型推挽激励的谐振式微机械静电场传感器;彭春荣等;《纳米技术与精密工程》;20100731;第8卷(第4期);第341页摘要 * |
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