CN113625064B - Torque type miniature electric field sensor based on modal localization - Google Patents
Torque type miniature electric field sensor based on modal localization Download PDFInfo
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- CN113625064B CN113625064B CN202010389820.XA CN202010389820A CN113625064B CN 113625064 B CN113625064 B CN 113625064B CN 202010389820 A CN202010389820 A CN 202010389820A CN 113625064 B CN113625064 B CN 113625064B
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Abstract
An electric field sensor, comprising: a substrate (1); the resonators (2) are arranged on a plane parallel to the surface outside the surface of the substrate (1) through the supporting structure (3), the resonators (2) are arranged from one end of the plane to the other end opposite to the end, the side walls of the resonators (2) are opposite to each other and are coupled with each other, and the resonators (2) can vibrate along the direction parallel to the plane; induction electrodes (4) arranged on the outer side walls of the two resonators (2) at the two ends of the plane; the driving structure (5) is arranged on the outer side of at least one resonator (2) of the two resonators (2) at the two end positions of the plane, and the driving structure (4) is disconnected with the resonators (2); and the polarization medium layers (6) are arranged on one resonator (2) of the two resonators (2) at the two end positions of the plane. The electric field sensor has high sensitivity, small volume, mass production and system integration, and reduced cost.
Description
Technical Field
The invention relates to the field of sensors and Micro-Electro-Mechanical System (MEMS) systems, in particular to a torque type miniature electric field sensor based on modal localization.
Background
The MEMS-based electric field sensor is a device for measuring the electric field intensity and plays an important role in meteorological detection, aerospace, industrial production, smart grid, national defense and military and scientific research. The sensitivity requirements in the directions of target detection, high-sensitivity electrostatic measurement and the like are high.
According to different working principles, the electric field sensors can be divided into two main types, namely charge induction type and optical type, and early traditional electric field sensors based on the charge induction principle, such as double-ball type electric field sensors, rotary blades and the like, have the most prominent problems of larger volume and higher cost; with the development of MEMS technology, an electric field sensor based on MEMS technology has been proposed, and a torsional electric field sensor with excellent performance is taken as an example, which is smaller and easier to manufacture and integrate than a traditional electric field sensor, but is limited by the working principle, and also brings about the disadvantage of insufficient sensitivity.
Disclosure of Invention
First, the technical problem to be solved
Aiming at the problems in the prior art, the invention provides a torque type miniature electric field sensor based on modal localization, which is used for at least partially solving the technical problems.
(II) technical scheme
The present invention provides an electric field sensor comprising: a substrate 1; at least two resonators 2 arranged on a plane parallel to the surface of the substrate 1 outside the surface through a supporting structure 3, wherein the resonators 2 are arranged from one end of the plane to the other end opposite to the one end, side walls of the resonators 2 are opposite to each other, and are mutually coupled, and the resonators 2 can vibrate along the direction parallel to the plane; induction electrodes 4 provided on outer side walls of the two resonators 2 at positions of both ends of the plane; a driving structure 5 provided on the outer side of at least one resonator 2 of the two resonators 2 at the two end positions of the plane, the driving structure 4 being disconnected from the resonators 2; and a polarization medium layer 6 arranged on one resonator 2 of the two resonators 2 at the two ends of the plane.
Optionally, the resonator 2 comprises a mass 21 and a beam 22; the polarized medium layer 6 is disposed on the mass block 21, one end of the supporting beam 22 is fixed to the mass block 21, and the other end is fixed to the substrate 1 through the supporting structure 3.
Alternatively, the induction electrode 4 includes a movable portion 41 and an immovable portion 42, the movable portion 41 is provided on an outer side wall of the resonator 2, and the immovable portion 42 is fixed on the substrate 1 through the support structure 4.
Alternatively, the resonators 2 are connected by electrostatic coupling or mechanical beam direct coupling.
Optionally, at least one pair of the induction electrodes 4 are provided on the outer side wall of each resonator 2 of the two resonators 2 at the two end positions of the plane.
Alternatively, the driving structure 5 includes an electrostatic driving structure, a piezoelectric driving structure, a thermal driving structure, or a magnetic driving structure.
Optionally, the material of the polarization medium layer 6 includes silicon nitride, or an insulating material with a dielectric constant higher than a preset value, or an electret, or a piezoelectric material.
Optionally, the resonator 2 includes at least 2N of the support beams 22 and N of the masses 21, where N is a positive integer. .
Optionally, the sensing electrode 4 is in a strip structure, and the driving structure 5 is in a flat plate structure.
Alternatively, the polarizing dielectric layer 6 is probe-spaced polarized or electrode-applied polarized.
(III) beneficial effects
The invention provides a torque type miniature electric field sensor based on modal localization, which utilizes the principle of modal localization to limit energy in the working process of the sensor to local parts by arranging a resonator, an induction electrode, a polarized medium layer and the like, converts the intensity of an electric field into rigidity disturbance, and further converts the rigidity disturbance into an amplitude ratio to measure the intensity of the electric field, thereby improving the sensitivity of the sensor. In addition, the electric field sensor with the structure can be manufactured by adopting the MEMS technology, is beneficial to realizing batch manufacturing and system integration, and simultaneously reduces the cost.
Drawings
FIG. 1 schematically illustrates a block diagram of a torque type miniature electric field sensor provided by an embodiment of the present invention;
FIG. 2 schematically illustrates a top view of a torque type miniature electric field sensor provided by an embodiment of the present invention;
FIG. 3 schematically illustrates a specific block diagram of a mechanically coupled resonator of an electric field sensor according to an embodiment of the present invention;
FIG. 4 schematically illustrates a manufacturing flow diagram of a modal localization based torque type micro electric field sensor provided by an embodiment of the present invention;
FIG. 5A schematically illustrates a structure diagram of a probe used in a probe blank polarization method according to an embodiment of the present invention;
FIG. 5B schematically illustrates a flow chart of an additional electrode polarization method provided by an embodiment of the present invention;
fig. 6 schematically shows a flowchart of an external electrode polarization method according to an embodiment of the present invention.
[ reference numerals ]
1-substrate, 2-resonator, 21-mass, 22-beam, 3-support structure, 4-sense electrode, 41-movable part, 42-immovable part, 5-drive structure, 6-polarized dielectric layer, 7-mechanical beam, 8-probe.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
The embodiment of the invention provides a torque type miniature electric field sensor, which comprises a substrate, wherein the substrate is fixedly provided with a driving structure, an induction electrode, a polarized medium layer and a plurality of resonators through a supporting structure (fixed anchor point). The electric field sensor can utilize the principle of modal localization to enable energy to be localized in the working process of the sensor, and the electric field intensity is converted into rigidity disturbance, so that the rigidity disturbance is converted into an amplitude ratio, and the sensitivity of the sensor is improved. The following is made by way of specific examples.
Fig. 1 schematically illustrates a structural diagram of a torque type miniature electric field sensor provided in this embodiment, and as shown in fig. 1, the electric field sensor may include, for example:
the substrate 1 is provided with at least two resonators 2, the resonators 2 are arranged on a plane parallel to the surface outside the surface of the substrate 1 through a supporting structure 3, the resonators 2 are arranged from one end of the plane to the other end (the direction shown in fig. 1) opposite to the end, the side walls of the resonators 2 are opposite to each other and are mutually coupled, and the resonators 2 can vibrate along the direction parallel to the plane. In a possible manner of this embodiment, the number of resonators 2 is three, one resonator 2 is disposed at each of the left and right ends, one resonator 2 is disposed in the middle, and the side walls of the three resonators 2 are opposite to each other, so that the resonators can vibrate reciprocally, and the following description will be given by taking three resonators as an example, but the present invention is not limited to the specific embodiment.
In a possible manner of this embodiment, each resonator 2 comprises a mass 21 and a corbel 22. The support beam 22 has one end fixed to the mass 21 and the other end fixed to the substrate 1 through the support structure 3, thereby achieving fixation of the resonator 2, so that the resonator 2 can vibrate in a horizontal direction in the direction shown in fig. 1. The resonator 2 may include at least 2N support beams 22 and N mass blocks 21, where N is a positive integer, in this embodiment, the mass blocks 21 are set to square mass blocks or rectangular mass blocks, the mass blocks 21 are set to one, the number of the support beams 22 is set to 4, and the 4 support beams 22 are symmetrical about the center of the mass blocks, so that the stress of the mass blocks 21 in the vibration process is uniform. The number and the positions of the mass blocks and the supporting beams in the resonator 2 are not limited, and only the horizontal vibration of the resonator 2 is required.
And induction electrodes 4 provided on the outer side walls of the two resonators 2 at the two end positions of the plane. As shown in fig. 1, the outer side walls of the left and right resonators 2 are provided with induction electrodes 4. The sensing electrode 4 may include a movable portion 41 and an immovable portion 42, the movable portion 41 being provided on an outer side wall of the resonator 2, the immovable portion 42 being fixed to the substrate 1 by the support structure 3. In a possible manner of this embodiment, at least one pair of sensing electrodes 4 is provided on the outer side wall of each resonator 2 of the two resonators 2 at the left and right ends. As shown in fig. 1, in this embodiment, a pair of sensing electrodes 4 are disposed on the outer side wall of the resonator 2, and the specific number of pairs can be set according to the actual number, which is not limited by the present invention. The sensing electrode 4 may have a strip structure, and the specific structure is not limited by the present invention, and may be set according to actual requirements.
And a driving structure 5 provided outside at least one resonator 2 of the two resonators 2 at both end positions of the plane, the driving structure 4 being disconnected from the resonators 2, the driving structure 5 being for horizontal vibration of the resonators 2. As shown in fig. 1, the driving structure 5 is disposed at one side of the rightmost resonator 2, and the driving structure 5 may be disposed at one side of the leftmost resonator 2 (not shown). The driving structure 5 includes an electrostatic driving structure, a piezoelectric driving structure, a thermal driving structure, or a magnetic driving structure. The electrostatic driving structure is selected in this embodiment to drive the resonator 2. The driving structure 5 may be a bar-like structure.
And a polarization medium layer 6 arranged on one resonator 2 of the two resonators 2 at the two ends of the plane. As shown in fig. 1, the polarization medium layer 6 is attached to the mass 21 of the resonator 2 at the rightmost end, and the polarization medium layer 6 is attached to the mass 21 of the resonator 2 at the leftmost end (not shown in the figure). The material of the polarizing dielectric layer 6 comprises silicon nitride, or any other insulating material with a dielectric constant higher than a preset value, or electret or piezoelectric material. The shape of the polarized medium layer 6 can be cuboid, cylinder, strip, ring shape or other various shapes, the specific shape can be set according to the actual requirement, and the invention is not limited by the specific structure.
In a possible way of this embodiment, the resonators 2 are connected by electrostatic coupling or by direct coupling of mechanical beams. As shown in fig. 2, the electrostatic coupling connection is realized by applying a dc voltage (V shown in fig. 2) to the resonators 2 at the intermediate position, grounding the two resonators 2 at the two ends (Gnd shown in fig. 2), and generating a weak coupling effect by the dc coupling voltage. As shown in fig. 3, the mechanical beam direct coupling connection means that the resonators 2 are connected by means of an elongated mechanical beam 7, which is arranged such that the three resonators are coupled together by means of mechanical coupling. The electrostatic coupling is that the three resonators are not connected with each other, the mechanical beam direct coupling connection is that the three resonators are directly connected with each other, but no matter how the three resonators are connected with each other, the electric field sensor can generate a mode localization phenomenon, and then the phenomenon is used for measuring the electric field intensity.
In a possible manner of this embodiment, the substrate 1 may include two or more sets of the above-described electric field sensor structures thereon.
With continued reference to fig. 2, a polarization medium layer 6 is disposed on the mass 21 of the resonator 2 at the lowest end in the direction shown in fig. 2, and a driving structure 5 is disposed below the resonator 2 at the lowest end, so that electrostatic coupling is performed between the resonators 2. The working principle of the torque type electric field sensor is as follows:
the application of an alternating voltage to the drive structure 5 will generate an alternating electrostatic force to the lowermost resonator 2, thereby generating a cyclic amplitude of the round trip of the resonator 5. Since the dc coupling voltage is applied to the resonator 2 at the intermediate position to generate electrostatic coupling, the uppermost resonator 2 and the lowermost resonator 2 also generate vibration of equal amplitude and opposite directions. When an external electric field (to-be-detected electric field) exists, the polarized medium layer 6 generates torque to the resonator 2 at the lowest end, so that the resonator 2 at the lowest end generates rigidity disturbance, and a modal localization phenomenon is generated, so that the vibration amplitude of the resonator 2 at the lowest end is increased, the vibration amplitude of the resonator 2 at the highest end is decreased, the induced currents of the two groups of induction electrodes 4 are different due to amplitude change, and the electric field strength of the to-be-detected electric field can be determined by using different ratio of the induced currents of the two groups of induction electrodes 4.
In addition, the direction of the induction electric field of the electric field sensor is a horizontal electric field, and a three-position electric field sensor can be formed by assembling three sensors.
The electric field sensor provided in this embodiment may be manufactured using micro-nano processing technology, micro-electro-mechanical system (MEMS) technology, SOI MEMS, bulk silicon technology, surface technology, or precision machining technology. A manufacturing process flow based on MEMS technology is provided below.
As shown in fig. 4, the method includes the following steps:
s1, plating a silicon nitride film on a substrate (SOI silicon wafer) by adopting PECVD, photoetching the silicon nitride film, and removing the silicon nitride and the photoresist.
S2, plating a metal aluminum layer by utilizing CVD, photoetching and removing aluminum and photoresist.
S3, photoetching a device layer of the SOI silicon wafer, etching the device layer by using DRIE, and utilizing an over etching stage of the DRIE to adopt a latch effect so as to release the subsequent device layer more easily.
And S4, removing the photoresist, adopting an HF wet etching oxidation layer, and finally releasing the device layer.
And S5, polarizing the dielectric layer to obtain a polarized dielectric layer.
In S5, the polarization mode of the dielectric layer may be probe-spaced polarization or electrode-applied polarization.
The cylindrical shape in fig. 5A is a probe, and by externally applying a high voltage V1 to the probe 8 and applying a ground to the resonator, a polarization effect can be achieved on the dielectric layer. FIG. 5B is a schematic diagram of a structural composition of probe polarization. The electrode layer is held to ground, and the dielectric layer is polarized by applying a high voltage to the probe in a noncontact manner.
Fig. 6 is a process diagram of an applied electrode polarization scheme. Specifically, a dielectric layer (including a resonator beam) is sputtered or deposited on the resonator, then electrode layers are respectively led out on the device layer and the dielectric layer, and finally the dielectric layer can be polarized by applying high voltage to the two electrode layers, so as to obtain a polarized dielectric layer.
According to the torque type miniature electric field sensor based on modal localization, the energy is localized in the working process of the sensor by means of the principle of modal localization through the layout of the structures such as the resonator, the sensing electrode and the polarized medium layer, the electric field intensity is converted into rigidity disturbance, and the rigidity disturbance is further converted into the amplitude ratio to measure the electric field intensity, so that the sensitivity of the sensor is improved. Moreover, the electric field sensor with the structure has small volume, can be manufactured by adopting the MEMS technology, is beneficial to realizing batch manufacturing and system packaging integration, reduces the cost, and is beneficial to the wide application of the electric field sensor in the aspects of weather detection, aerospace, industrial production, smart power grids, national defense military, scientific research and the like.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (9)
1. An electric field sensor, comprising:
a substrate (1);
at least two resonators (2) arranged on a plane parallel to the surface of the substrate (1) outside the surface through a supporting structure (3), wherein the resonators (2) are arranged from one end of the plane to the other end opposite to the one end, side walls of the resonators (2) are opposite to each other and are coupled with each other, and the resonators (2) can vibrate along the direction parallel to the plane;
induction electrodes (4) arranged on the outer side walls of the two resonators (2) at the two ends of the plane;
a driving structure (5) arranged on the outer side of at least one resonator (2) of the two resonators (2) at the two end positions of the plane, wherein the driving structure (4) is disconnected from the resonators (2);
and the polarization medium layer (6) is arranged on one resonator (2) of the two resonators (2) at the two ends of the plane, and the polarization medium layer (6) adopts a probe to separate space polarization or an external electrode for polarization.
2. The electric field sensor according to claim 1, characterized in that the resonator (2) comprises a mass (21) and a corbel (22);
the polarized medium layer (6) is arranged on the mass block (21), one end of the supporting beam (22) is fixed with the mass block (21), and the other end of the supporting beam is fixed on the substrate (1) through the supporting structure (3).
3. The electric field sensor according to claim 1, characterized in that the induction electrode (4) comprises a movable part (41) and an immovable part (42), the movable part (41) being provided at an outer side wall of the resonator (2), the immovable part (42) being fixed to the substrate (1) by the support structure (4).
4. An electric field sensor according to claim 1, characterized in that the resonators (2) are connected by electrostatic coupling or mechanical beam direct coupling.
5. An electric field sensor according to claim 1, characterized in that each of the two resonators (2) at the two end positions of the plane is provided with at least one pair of the induction electrodes (4) on the outer side wall of the resonator (2).
6. The electric field sensor according to claim 1, characterized in that the driving structure (5) comprises an electrostatic driving structure, a piezoelectric driving structure, a thermal driving structure or a magnetic driving structure.
7. An electric field sensor according to claim 1, characterized in that the material of the polarizing dielectric layer (6) comprises silicon nitride, or an insulating material with a dielectric constant higher than a preset value, or an electret, or a piezoelectric material.
8. The electric field sensor according to claim 2, characterized in that the resonator (2) comprises at least 2N of the corbels (22) and N of the masses (21), where N is a positive integer.
9. An electric field sensor according to claim 1, characterized in that the induction electrode (4) is a strip-like structure and the driving structure (5) is a flat plate structure.
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| CN101685119A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院电子学研究所 | Resonance miniature electric field sensor |
| CN106093605A (en) * | 2016-06-08 | 2016-11-09 | 中国科学院电子学研究所 | A kind of torsional mode electric-field sensor |
| CN109655674A (en) * | 2019-02-27 | 2019-04-19 | 西北工业大学 | Faint electrostatic field measurement device and method based on weak coupling micromechanical resonator |
| CN109786422A (en) * | 2019-01-23 | 2019-05-21 | 西安交通大学 | Piezoelectric exciting is by micro- resonance pressure sensor chip of pull-type silicon and preparation method thereof |
| CN109883579A (en) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | A kind of double H-type is by micro- resonance pressure sensor chip of straining beam silicon and preparation method thereof |
| CN110940866A (en) * | 2019-11-29 | 2020-03-31 | 中国科学院电子学研究所 | Sensitivity adjustable resonance miniature electric field sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10859620B2 (en) * | 2017-04-04 | 2020-12-08 | The Charles Stark Draper Laboratory, Inc. | Miniature electric field detector |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685119A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院电子学研究所 | Resonance miniature electric field sensor |
| CN106093605A (en) * | 2016-06-08 | 2016-11-09 | 中国科学院电子学研究所 | A kind of torsional mode electric-field sensor |
| CN109786422A (en) * | 2019-01-23 | 2019-05-21 | 西安交通大学 | Piezoelectric exciting is by micro- resonance pressure sensor chip of pull-type silicon and preparation method thereof |
| CN109883579A (en) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | A kind of double H-type is by micro- resonance pressure sensor chip of straining beam silicon and preparation method thereof |
| CN109655674A (en) * | 2019-02-27 | 2019-04-19 | 西北工业大学 | Faint electrostatic field measurement device and method based on weak coupling micromechanical resonator |
| CN110940866A (en) * | 2019-11-29 | 2020-03-31 | 中国科学院电子学研究所 | Sensitivity adjustable resonance miniature electric field sensor |
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