CN1312482C - Semiconductor acceleration sensing equipment - Google Patents
Semiconductor acceleration sensing equipment Download PDFInfo
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- CN1312482C CN1312482C CNB031475159A CN03147515A CN1312482C CN 1312482 C CN1312482 C CN 1312482C CN B031475159 A CNB031475159 A CN B031475159A CN 03147515 A CN03147515 A CN 03147515A CN 1312482 C CN1312482 C CN 1312482C
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- sensor
- semiconductor
- quickens
- control circuit
- piezoresistance
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Abstract
The present invention discloses a semiconductor acceleration sensor which mainly comprises a non-single-crystal silicon foundation base, a beam-shaped structure, at least one piezoresistance, a supporting component and a thin film transistor control circuit, wherein the beam-shaped structure is provided with a movable end and a fixed end; the piezoresistance is arranged on the beam-shaped structure; the supporting component is arranged on the non-single-crystal silicon foundation base and is used for fixing the fixed end of the beam-shaped structure so that the beam-shaped structure and the non-single-crystal silicon foundation base are separated at a distance; the thin film transistor control circuit is electrically connected with the piezoresistance and the beam-shaped structure.
Description
Technical field
The present invention relates to a kind of acceleration sensor, especially a kind of cost of manufacture is lower, and can avoid leakage current generation, quicken sensor (semiconductoracceleration sensor) in the hope of the semiconductor that accords with the demands of the market.
Background technology
Quickening sensor has been widely used in seismograph, vehicle safety steam pocket, the remote control equipment fields such as (robotics).Generally speaking, it is many that the principle of measure quickening and method have, and at the application of different field or special demands different methods for designing arranged and consider.At present, the method for designing of acceleration sensor mainly comprises pressure resistance type (piezoresistive), piezoelectric type (piezoelectric), condenser type (capacitive) and semiconductor sensor etc.
Because significantly dwindling and technology, assembling and operational restriction of various acceleration sensor sizes aspect, a kind of new micro-processing technology (micromachining technology) has appearred, can be applicable to make various micro-sensing elements (microsensor) and micro-actuator (microactuator), and can constitute micro-system (microsystem) after integrating with microelectronic circuit, be commonly referred to as MEMS (micro electro mechanical system) (microelectro-mechanical system, MEMS).MEMS has microminiaturization, (batchproduction) advantage to reduce cost can be mass-produced, and can be made in simultaneously on the silicon wafer to form monolithic (monolithic) element with signal processing circuit, this is particularly important for sensor, because the faint output signal of sensor is processing and amplifying nearby, to avoid extraneous electromagnetic interference (EMI), and can utilize signal processing circuit to carry out analog digital conversion (analog-to-digital earlier, A/D) after, be transported to CPU (central processing unit) again, therefore can improve the signal fiduciary level, reduce the burden of line number and central control system.Because significantly dwindling and technology, assembling and operational restriction of size aspect utilizes the sensitivity and the cost of manufacture of the acceleration sensor of MEMS made all to be better than traditional handicraft, development in recent years is quite fast.And in various type of drive, because pressure resistance type has advantages such as high output voltage and high sensitivity, and piezoelectric type has high sensitivity, low electromagnetic interference (EMI), low-power dissipation, has the dynamo-electric ability that can exchange, energy density height, movement response soon and to advantages such as environmental sensibility are low, therefore in micro electronmechanical field, paid attention to very much with the miniature sensor and the micro-actuator of these two kinds of form mades.
Please refer to Fig. 1, Fig. 1 is the diagrammatic cross-section that known pressure resistance type semiconductor quickens sensor 10.As shown in Figure 1, it mainly comprises the etched semiconductor-based end (etched semiconductorsubstrate) 12, for example monocrystal silicon substrate or silicon-coated insulated (silicon-on-insulator, SOI) substrate, and the etched semiconductor-based end 12, comprise beam shape part (beam section) 14, be used for fixing (anchor) part 16 of brace summer shape part 14, be arranged at weight (weight) part 18 at the edge of beam shape part 14, and at least one is arranged at the piezoresistance (piezoresistor) 20 in the beam shape part 14, quickens the sensing element of sensor 10 as semiconductor.In addition, semiconductor quickens sensor 10 and also comprises the control circuit 22 that is arranged at at semiconductor-based the end 12, it is electrically connected with voltage resistance 20 with beam shape part 14, control circuit 22 mainly comprises CMOS (Complementary Metal Oxide Semiconductor) (CMOS), amplifying circuit or logical circuit (all not being shown among Fig. 1) etc., and its function is to receive, handle and transmits the signal that piezoresistance 20 is exported.
Generally, the etched semiconductor-based end 12 is to utilize etching solution (etchant), potassium hydroxide (potassium hydroxide for example, KOH) the anisotropic etching is carried out at the back side of semiconductor substrate, to form the area and the thickness of technology required beam shape part 14 and wt part 18, in addition, wt part 18 also can be arranged on the edge of beam shape part 18 in addition according to process requirements.And the method that forms piezoresistance 20 mainly is to utilize diffusion method or implanting ions technology, with boron (boron, B) implant in the beam shape part 14, because the beam shape partly is the monocrystalline silicon crystalline network, therefore can form p-n connects face (junction), this p-n connects face and is pressure drag component, can be used for pressure sensor to change.
When the accelerating force (acceleration force) of vertical direction puts on known pressure resistance type semiconductor acceleration sensor 10, this moment is because the wt part 18 of beam shape part 14 is heavier, therefore the vibration (flexural vibration) that can produce beam mode, and therefore the piezoresistance 20 that is arranged in the beam shape part 14 also produces deformation, cause the resistance value of piezoresistance 20 to change simultaneously, then utilize control circuit 22 to carry out signal Processing again, for example signal is amplified, carry out temperature compensation (temperature compensation) etc., and the resistance change amount that receives is converted into differential wave (differential signal) output, to measure the resistance change that is directly proportional with accelerating force to be measured, its numerical value can be corresponding to the size of accelerating force to be measured.
In addition, when the material of piezoresistance 20 is replaced by piezoelectric membrane (piezoelectric thin film), for example during zinc paste (ZnO), this semiconductor quickens sensor and is the piezoelectric type semiconductor and quickens sensor.It mainly is to utilize piezoelectric effect to drive that this piezoelectric type semiconductor quickens sensor, when vertical accelerating force puts on this piezoelectric membrane, the two ends of this piezoelectric membrane can produce the quantity of electric charge that is in proportion with accelerating force with the companion, by measuring this charge variation amount, can learn the size of accelerating force to be measured.
No matter yet known be that pressure resistance type or piezoelectric type semiconductor quicken sensor 10 and be the integrated structure of monocrystalline silicon, though use the sensor sensitivity that monocrystalline silicon constituted higher, yet its starting material and manufacturing cost are also higher.In addition, owing between the known beam shape part of utilizing doping method or the formed piezoresistance of ion implantation technology and monocrystalline silicon joint is arranged, so it is higher to produce the probability of leakage current, influences the normal running of sensor easily.
Summary of the invention
Fundamental purpose of the present invention is to provide the lower semiconductor of a kind of cost of manufacture to quicken sensor, and can reduce the generation of above-mentioned leakage problem.
According to a preferred embodiment of the invention, provide a kind of semiconductor to quicken sensor (semiconductoracceleration sensor), comprising: the non-monocrystalline silicon substrate; The beam texture that the material that is electrically insulated forms, it has movable end (movable section) and stiff end; At least one is arranged at the piezoresistance (piezoresistor) on this beam texture; Be arranged at the suprabasil supporting member that is electrically insulated of this non-monocrystalline silicon (supporter), be used for fixing the stiff end of this beam texture, make the distance of being separated by between this beam texture and this non-monocrystalline silicon substrate; And (it is arranged in this non-monocrystalline silicon substrate and with this piezoresistance and this beam texture and is electrically connected the thin film transistor (TFT) pipe for thin film transistor, TFT) control circuit.
According to a preferred embodiment of the invention, provide a kind of semiconductor to quicken sensor, comprising: dielectric base; The cantilever beam texture that the material that is electrically insulated forms, it is arranged on this dielectric base surface, has movable end, and separated by a distance between this movable end and this dielectric base; At least one piezoresistance, it is arranged on this cantilever beam texture; And control circuit, it is electrically connected on this piezoresistance and this insulating cantalever beam texture.
Because semiconductor of the present invention quickens sensor and is made in the non-monocrystalline silicon substrate, for example on substrate of glass or other dielectric base, therefore can significantly reduce raw-material cost.In addition, the present invention utilizes polycrystalline silicon material as piezoresistance, can effectively avoid the generation of known leakage problem, thereby improves the sensitivity and the accuracy of sensor.
Description of drawings
Fig. 1 quickens the diagrammatic cross-section of sensor for known semiconductor.
Fig. 2 is a diagrammatic cross-section of quickening sensor according to semiconductor of the present invention.
Embodiment
Please refer to Fig. 2, Fig. 2 quickens the diagrammatic cross-section of sensor 30 for semiconductor of the present invention.As shown in Figure 2, semiconductor acceleration sensor 30 of the present invention mainly comprises: non-monocrystalline silicon substrate 32; The semi-girder that is electrically insulated (cantilever) structure 34, on it comprises beam shape part 36 with movable end and stiff end and is arranged at non-monocrystalline silicon substrate 32, and the supporting member 38 that links to each other with the stiff end of beam shape part 36, wt part 40 is arranged on the edge of cantilever beam structure 34; At least one is arranged at the piezoresistance 42 on the beam shape part 36 of cantilever beam structure 34; And control circuit, thin film transistor (TFT) (thin film transistor for example, TFT) control circuit 44, and it is arranged at non-monocrystalline silicon substrate 32 surfaces and is electrically connected on cantilever beam structure 34 and piezoresistance 42, and it is in order to receive, to handle and transmit the signal of piezoresistance 42 outputs.Wherein, when using piezoresistance 42 as sensing element, the invention provides a kind of pressure resistance type semiconductor and quicken sensor, piezoresistance 42 is replaced into piezoelectric membrane (not being shown among Fig. 2) with as sensing element the time, the present invention provides a kind of piezoelectric type semiconductor and quickens sensor.
In a preferred embodiment of the invention, non-monocrystalline silicon substrate 32 is made of glass (glass), because the fusing point of glass is lower, for the TFT control circuit 44 of avoiding follow-up formation impacts non-monocrystalline silicon substrate 32 because of temperature is too high, TFT control circuit 44 of the present invention need be low temperature polycrystalline silicon (lowtemperature polysilicon, LTPS) a TFT control circuit.Yet the present invention is not limited thereto, and non-monocrystalline silicon substrate 32 of the present invention also can be made of quartz, because quartzy fusing point is higher, therefore TFT control circuit 44 of the present invention also can be high temperature polysilicon TFT control circuit.In addition, beam shape part 36, supporting member 38 and the wt part 40 of cantilever beam structure 34 of the present invention can be one-body molded, also can separately make, and decide on the design of process requirements, the material that forms cantilever beam structure 34 and wt part 40 can be the material that is electrically insulated, for example silicon dioxide.In addition, the material that forms piezoresistance 42 comprises doping (doped) polysilicon, the method that forms piezoresistance 42 comprises electron gun evaporation (e-beam evaporation) or radio frequency line sputter (RF sputtering) etc., and the material that forms this piezoelectric membrane comprises zinc paste (ZnO), barium titanate ceramics (BaTiO
3) or lead titanates chromium pottery (PbZrTiO
3PZT), and the method that forms this piezoelectric membrane comprises electron gun evaporation, radio frequency line sputter, dissolving gel method (sol-gel) or organic metal sedimentation (metallo-organic decomposition, MOD) etc., wherein the MOD method can produce that thickness is thicker, surface nature and piezoelectric property piezoelectric membrane preferably.
Similarly, it is sensors that a kind of resistance change amount of utilizing piezoresistance 42 is measured accelerating force to be measured that pressure resistance type semiconductor of the present invention quickens sensor 30, the piezoelectric type semiconductor quickens sensor and then is a kind of resonance power sensor (resonant force sensor) structure of utilizing piezoelectric effect to drive, it mainly utilizes piezoelectric membrane as converter (transducer), with as the vibratory drive of beam shape part 36 and the part of sensing, and can utilize the configuration that changes the piezoelectric membrane area to realize the optimization of the sensor opering characteristic of electric apparatus, to reduce the influence of electrical interference (electrical crosstalk).And the mode of operation of semiconductor acceleration sensor 30 of the present invention is identical with known sensor, does not give unnecessary details in addition at this.
It should be noted that, in a preferred embodiment of the invention, control circuit 44 is arranged on the substrate of glass 32, yet the present invention uses and is not limited thereto, control circuit 44 of the present invention can also be located on the printed circuit board (PCB) (printed circuit board, PCB is not shown among Fig. 2), utilize flexible printed circuit board (FPC board is not shown among Fig. 2) to be electrically connected control circuit 44, cantilever fine strain of millet structure 34 and piezoresistance 42 again.In addition, control circuit 44 for example comprises a plurality of integrated circuit (IC) wafer (integrated circuit chip, IC chip), also can directly be arranged on the flexible printed circuit board, utilize this flexible printed circuit board to be electrically connected control circuit 44, cantilever beam structure 34 and piezoresistance 42 again.In addition, non-monocrystalline silicon substrate of the present invention 32 surfaces also can comprise TFT viewing area (display area is not shown among Fig. 2), are used for showing that semiconductor of the present invention quickens the change value of pressure that sensor 30 measures, to make things convenient for the user to observe and to measure.
Quicken sensor with known semiconductor and compare, pressure resistance type of the present invention or piezoelectric type semiconductor quicken sensor and are made on substrate of glass or other dielectric base, therefore can significantly reduce raw-material cost.In addition, the present invention with polycrystalline silicon material or other piezoelectrics as piezoresistance, and utilize the plating mode to be formed on the beam shape part, therefore can obtain piezoelectric modulus preferably, and its crooked amplitude is also bigger, not only can avoid producing the known face that connects leakage problem, the sensitivity and the accuracy that more can improve sensor effectively.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (23)
1. a semiconductor quickens sensor, comprising:
The non-monocrystalline silicon substrate;
The beam texture that the material that is electrically insulated forms, it has movable end and stiff end;
At least one piezoresistance, it is arranged on this beam texture;
The supporting member that is electrically insulated, it is arranged in this non-monocrystalline silicon substrate, is used for fixing this stiff end of this beam texture, makes between this beam texture and this non-monocrystalline silicon substrate separated by a distance; And
The thin film transistor (TFT) control circuit, it is arranged in this non-monocrystalline silicon substrate and is electrically connected on this piezoresistance and this beam texture.
2. semiconductor as claimed in claim 1 quickens sensor, and wherein, this non-monocrystalline silicon substrate is a substrate of glass.
3. semiconductor as claimed in claim 2 quickens sensor, and wherein, this thin film transistor (TFT) control circuit is the low-temperature polysilicon film transistor control circuit.
4. semiconductor as claimed in claim 1 quickens sensor, and wherein, this non-monocrystalline silicon substrate is a quartz substrate.
5. semiconductor as claimed in claim 4 quickens sensor, and wherein, this thin film transistor (TFT) control circuit is a high temperature polysilicon thin film transistor (TFT) control circuit.
6. semiconductor as claimed in claim 1 quickens sensor, and wherein, this beam texture and this supporting member are one-body molded.
7. semiconductor as claimed in claim 6 quickens sensor, and wherein, this beam texture and this supporting structure all comprise silicon dioxide.
8. semiconductor as claimed in claim 1 quickens sensor, and wherein, this piezoresistance comprises doped polycrystalline silicon.
9. semiconductor as claimed in claim 1 quickens sensor, and wherein, this piezoresistance is a piezoelectric membrane.
10. semiconductor as claimed in claim 9 quickens sensor, and wherein, this piezoelectric membrane comprises zinc paste, barium titanate ceramics or lead titanates chromium pottery.
11. semiconductor as claimed in claim 1 quickens sensor, wherein, this non-monocrystalline silicon substrate surface also comprises the TFT viewing area, quickens the change value of pressure that sensor measures in order to show this semiconductor.
12. a semiconductor quickens sensor, comprising:
Dielectric base;
The cantilever beam texture that the material that is electrically insulated forms, it is arranged on this dielectric base surface, has movable end, and separated by a distance between this movable end and this dielectric base;
At least one piezoresistance, it is arranged on this cantilever beam texture; And
Control circuit, it is electrically connected on this piezoresistance and this insulating cantalever beam texture.
13. semiconductor as claimed in claim 12 quickens sensor, wherein, this insulating cantalever beam texture comprises silicon dioxide.
14. semiconductor as claimed in claim 12 quickens sensor, wherein, this piezoresistance comprises doped polycrystalline silicon.
15. semiconductor as claimed in claim 12 quickens sensor, wherein, this piezoresistance is a piezoelectric membrane.
16. semiconductor as claimed in claim 15 quickens sensor, wherein, this piezoelectric membrane comprises zinc paste, barium titanate ceramics or lead titanates chromium pottery.
17. semiconductor as claimed in claim 12 quickens sensor, wherein, this dielectric base is a substrate of glass.
18. semiconductor as claimed in claim 17 quickens sensor, wherein, this control circuit is arranged on this substrate of glass, and this control circuit comprises the low-temperature polysilicon film transistor control circuit.
19. semiconductor as claimed in claim 18 quickens sensor, wherein, this dielectric base is a quartz substrate.
20. semiconductor as claimed in claim 19 quickens sensor, wherein, this control circuit is arranged on this quartz substrate, and this control circuit comprises high temperature polysilicon thin film transistor (TFT) control circuit.
21. semiconductor as claimed in claim 12 quickens sensor, wherein, this control circuit is arranged on the printed circuit board (PCB), and this control circuit utilizes flexible printed circuit board to be electrically connected with this cantilever beam structure and this piezoresistance.
22. semiconductor as claimed in claim 12 quickens sensor, wherein, this control circuit is arranged on the flexible printed circuit board, and this control circuit utilizes this flexible printed circuit board to be electrically connected with this cantilever beam structure and this piezoresistance.
23. semiconductor as claimed in claim 12 quickens sensor, wherein, this dielectric base surface also comprises the TFT viewing area, quickens the change value of pressure that sensor measures in order to show this semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031475159A CN1312482C (en) | 2003-07-09 | 2003-07-09 | Semiconductor acceleration sensing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031475159A CN1312482C (en) | 2003-07-09 | 2003-07-09 | Semiconductor acceleration sensing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1566961A CN1566961A (en) | 2005-01-19 |
| CN1312482C true CN1312482C (en) | 2007-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031475159A Expired - Fee Related CN1312482C (en) | 2003-07-09 | 2003-07-09 | Semiconductor acceleration sensing equipment |
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| CN (1) | CN1312482C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101089545B (en) * | 2006-06-16 | 2010-04-07 | 中国科学院微电子研究所 | Design method for radio frequency single electronic transistor displacement transducer |
| DE102010030345B4 (en) * | 2010-06-22 | 2019-05-09 | Robert Bosch Gmbh | Method for producing a piezoresistive sensor arrangement and sensor arrangement |
| CN102889925B (en) * | 2011-07-22 | 2015-06-24 | 国家纳米科学中心 | Self-power supply vibration sensor based on ZnO nanowires and manufacturing method thereof |
| CN103245409B (en) * | 2013-04-17 | 2016-12-28 | 中北大学 | MEMS biomimetic features vector underwaster sensor based on piezoelectric effect |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2217223Y (en) * | 1994-08-26 | 1996-01-10 | 机械工业部沈阳仪器仪表工艺研究所 | Acceleration sensing element of symmetric beam type made of non-concentrated boron-doping silicon |
| JPH08236785A (en) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | Acceleration sensor and manufacture thereof |
| JPH09166618A (en) * | 1995-12-15 | 1997-06-24 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| US5665914A (en) * | 1995-05-02 | 1997-09-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor acceleration sensor and its fabrication method |
| CN1386211A (en) * | 2000-07-31 | 2002-12-18 | 索尼公司 | Liquid crystal display panel and method for manufacturing the same, and liquid crystal display |
| CN1415968A (en) * | 2002-12-13 | 2003-05-07 | 中国科学院上海微系统与信息技术研究所 | Single chip integrated acceleration transducer of piezoresistance for micro girder construction in straight pull and vertical compression as well as its preparation method |
-
2003
- 2003-07-09 CN CNB031475159A patent/CN1312482C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2217223Y (en) * | 1994-08-26 | 1996-01-10 | 机械工业部沈阳仪器仪表工艺研究所 | Acceleration sensing element of symmetric beam type made of non-concentrated boron-doping silicon |
| JPH08236785A (en) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | Acceleration sensor and manufacture thereof |
| US5665914A (en) * | 1995-05-02 | 1997-09-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor acceleration sensor and its fabrication method |
| JPH09166618A (en) * | 1995-12-15 | 1997-06-24 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor |
| CN1386211A (en) * | 2000-07-31 | 2002-12-18 | 索尼公司 | Liquid crystal display panel and method for manufacturing the same, and liquid crystal display |
| CN1415968A (en) * | 2002-12-13 | 2003-05-07 | 中国科学院上海微系统与信息技术研究所 | Single chip integrated acceleration transducer of piezoresistance for micro girder construction in straight pull and vertical compression as well as its preparation method |
Non-Patent Citations (1)
| Title |
|---|
| Poly-Si TFT制备工艺 刘晓彦，孙卫，关旭东，翟霞云，韩汝琦，光电子技术，第17卷第1期 1997 * |
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| CN1566961A (en) | 2005-01-19 |
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