CN100371718C - capacitive acceleration sensor - Google Patents
capacitive acceleration sensor Download PDFInfo
- Publication number
- CN100371718C CN100371718C CNB031474527A CN03147452A CN100371718C CN 100371718 C CN100371718 C CN 100371718C CN B031474527 A CNB031474527 A CN B031474527A CN 03147452 A CN03147452 A CN 03147452A CN 100371718 C CN100371718 C CN 100371718C
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- Prior art keywords
- acceleration sensor
- condenser type
- type acceleration
- silicon substrate
- monocrystalline silicon
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- 230000001133 acceleration Effects 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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Abstract
The present invention provides a Capacitive Acceleration Sensor (CAS). The capacitive acceleration sensor mainly comprises a non-monocrystalline silicon substrate, a polycrystalline silicon beam-shaped structure with a movable end (movable section), a movable electrode arranged at the movable end, a polycrystalline silicon supporting member (support) arranged on the non-monocrystalline silicon substrate for fixing the beam-shaped structure, a fixed electrode (fixed capacitor) arranged on the non-monocrystalline silicon substrate below the movable end of the beam-shaped structure, a plate capacitor formed by the fixed electrode and the movable electrode, and a Thin Film Transistor (TFT) control circuit electrically connected with the plate capacitor.
Description
Technical field
The present invention provides a kind of acceleration sensor, refer to especially the lower condenser type acceleration sensor of a kind of cost of manufacture (capacitive acceleration sensor, CAS), in the hope of according with the demands of the market.
Background technology
Acceleration sensor has been widely used in seismograph, vehicle safety steam pocket, the remote control equipment fields such as (robotics).Generally speaking, it is many that the principle that accelerating force is measured and method have, and at being applied to every field or special demands, and the different designs method is arranged and considering.The method for designing of acceleration sensor mainly has pressure resistance type (piezoresistive), piezoelectric type (piezoelectric), condenser type (capacitive) at present, and semiconductor transducer etc.
Because significantly dwindling of various acceleration sensor size aspects, with manufacture process, assembling and operational restriction, a kind of new micro-processing technology (micromachining technology), can be applicable to make various micro-sensing elements (microsensor) and micro-actuator (microactuator), and can constitute micro-system (microsystem) after integrating with microelectronic circuit, be commonly referred to as MEMS (micro electro mechanical system) (microelectro-mechanical system, MEMS).MEMS has microminiaturization, but the advantage of batch making (batchproduction) to reduce cost, and can be made in simultaneously on the silicon wafer to form single stone (monolithic) element with signal processing circuit, this is particularly important for sensor, because the faint output signal of sensor is processing and amplifying nearby, to avoid extraneous electromagnetic interference (EMI), and can utilize the signal processing circuit analogy analog to digital conversion (analog-to-digital that goes ahead of the rest, A/D) after, be transported to CPU (central processing unit) again, therefore can improve the signal fiduciary level, reduce the burden of line number and central control system.Because significantly dwindling of size aspect with manufacture process, assembling and operational restriction, utilized the acceleration sensor of MEMS made, all outstanding than traditional manufacture process on its sensitivity and the cost of manufacture, development in recent years is quite rapid.And in various type of drive, the condenser type acceleration sensor has high sensitivity, and advantage such as is difficult for being affected by the external environment, and is attracted attention gradually on market.
Please refer to Fig. 1, Fig. 1 is the diagrammatic cross-section of existing condenser type acceleration sensor 10.As shown in Figure 1, existing condenser type acceleration sensor 10 mainly has semiconductor substrate (semiconductorsubstrate) 12, for example monocrystal silicon substrate or silicon-coated insulated (silicon-on-insulator, SOI) substrate, one epitaxially grown silicon beam texture (beam section) 14, beam texture 14 has a movable end (movablesection), and be provided with a movable electrode 16 at moving part, one epitaxially grown silicon supporting (supporter) member 18 is located at at semiconductor-based the end 12, be used for fixing beam texture 14 and make beam texture 14 and the semiconductor-based end 12 distance at interval, and a doped region 20 is located at at the semiconductor-based end 12 of movable electrode 16 belows.Wherein, movable electrode 16 constitutes capacity plate antennas (platecapacitor) 22 with doped region 20, and movable electrode 16 is to be used for being used as a top electrode, and doped region 20 is to be used for being used as a bottom electrode or fixing (stationary) electrode.In addition, existing condenser type acceleration sensor 10 has a control circuit in addition, a CMOS (Complementary Metal Oxide Semiconductor) (complementarymetal-oxide semiconductor for example, CMOS) control circuit 24 is located at supporting member 18 or at the semiconductor-based end 12, and be electrically connected on capacity plate antenna 22, mainly be to be used for receiving, handling and to transmit the signal that capacity plate antenna 22 is exported.
When the accelerating force (acceleration force) of a vertical direction puts on existing condenser type acceleration sensor 10, this moment beam texture 14 the movable end vibration (flexuralvibration) that can produce beam mode, and change the capacitance of capacity plate antenna 22 simultaneously, then utilize control circuit 22 to receive the signal that transmits by capacity plate antenna 22 again and carry out a signal Processing, for example signal is amplified, carry out temperature compensation (temperature compensation) etc., and this signal is converted into differential wave (differentialsignal) output, its numerical value can be with respect to the size of accelerating force to be measured, therefore existing acceleration sensor 10 can utilize CMOS control circuit 24 to survey the static capacity of capacity plate antenna 22 (electrostaticcapacitance) variable quantity, to obtain the size of accelerating force.In addition, because the capacitance of this capacity plate antenna is only relevant with physical state (physical parameters), therefore can use to have low thermal coefficient of expansion the material of (thermal expansion coefficient) forms pressure sensing element to obtain the preferred acceleration sensor 10 of sensitivity.
Yet the semiconductor-based end 12 of existing condenser type acceleration sensor, beam texture 14 all have monocrystalline silicon or epitaxially grown silicon with the material of supporting member 18, though it is higher to record the sensitivity of pressure, but because silicon wafer (silicon wafer) is higher with the cost that forms the epitaxial growth silicon layer, for pressure sensing element with keen competition market, how producing lower and product quality better of cost is a present important problem.
Summary of the invention
The condenser type acceleration sensor that provides a kind of cost of manufacture lower is provided fundamental purpose of the present invention.
A kind of semiconductor acceleration sensor is disclosed in a preferred embodiment of the invention, it comprises: a non-monocrystalline silicon substrate, one polysilicon (polysilucon) beam texture, it has a stiff end and a movable end, and this movable end has a movable electrode, one polysilicon supporting member is located in this non-monocrystalline silicon substrate, be used for fixing this stiff end of this beam texture, make the distance of being separated by between this beam texture and this non-monocrystalline silicon substrate, one fixed electorde is located on this dielectric base, correspond to this movable end of this beam texture, and this fixed electorde and this movable electrode constitute a capacity plate antenna, and one thin film transistor (TFT) (thin film transistor, TFT) control circuit is located in this non-monocrystalline silicon substrate, and is electrically connected on this capacity plate antenna.
Because condenser type acceleration sensor of the present invention is to be made in the non-monocrystalline silicon substrate, for example on substrate of glass or the quartz substrate, therefore can significantly save raw-material cost.In addition, the present invention utilizes polycrystalline silicon material to form integrated beam texture and its supporting member, not only can reduce the manufacture process cost, and suitable volume production is to meet market price demand.
Description of drawings
Fig. 1 is the diagrammatic cross-section of existing condenser type acceleration sensor;
Fig. 2 is the diagrammatic cross-section of condenser type acceleration sensor of the present invention.
Description of reference numerals
The 12 semiconductor-based ends of 10 semiconductor acceleration sensors
14 epitaxially grown silicon beam textures, 16 movable electrodes
18 epitaxially grown silicon supporting members, 20 doped regions
22 capacity plate antennas, 24 CMOS control circuits
The 32 non-monocrystalline silicon substrates of 30 semiconductor acceleration sensors
34 cantilever beam textures, 36 polysilicon beam textures
38 polysilicon supporting members, 40 movable electrodes
42 fixed electordes, 44 capacity plate antennas
46 TFT control circuits
Embodiment
Please refer to Fig. 2, Fig. 2 is the diagrammatic cross-section of condenser type acceleration sensor 30 of the present invention.As shown in Figure 2, condenser type acceleration sensor 30 of the present invention mainly has a non-monocrystalline silicon substrate 32, one cantilever beam texture 34, it has a polysilicon beam texture 36 and a polysilicon supporting member 38 is located in the non-monocrystalline silicon substrate 32, be used for fixing beam texture 36, and make to have a distance between beam texture 36 and the amorphous silicon substrate 32, and beam texture 36 has a movable end, partly be provided with a movable electrode 40 in movable end, one fixed electorde 42 is located in the non-monocrystalline silicon substrate 32 of movable electrode 40 belows, movable electrode 40 and fixed electorde 42 are used for being used as the upper/lower electrode of a capacity plate antenna 44 of condenser type acceleration sensor 30 respectively again, an and control circuit, a thin film transistor (TFT) (thin filmtransistor for example, TFT) control circuit 46 is located in the non-monocrystalline silicon substrate 32, and be electrically connected on cantilever beam texture 34 and capacity plate antenna 44, be used for receiving, handle and transmit the signal that capacity plate antenna 44 is exported.
When the accelerating force of a vertical direction puts on condenser type acceleration sensor 30 of the present invention, the movable electrode 40 of being located at the movable end of beam texture 36 can receive the power of a vertical direction, make the movable end of beam texture 36 produce the vibration (flexural vibration) of beam mode, and and the variation of 42 generations of fixed electorde relative position, also make the capacitance in the capacity plate antenna 44 change thereupon, when the distance between movable electrode 40 and the fixed electorde 42 shortens, it is big that the static capacity of capacity plate antenna 44 (electrostaticcapacitance) can become, and when the distance between movable electrode 40 and the fixed electorde 42 increases, the static capacity of capacity plate antenna 44 can reduce, so can utilize a differential amplifier (differential amplifier) or other electronic components that the capacitance variation amount that receives is carried out a signal Processing by TFT control circuit 46 again, to obtain the size of accelerating force to be measured.
In a preferred embodiment of the invention, non-monocrystalline silicon substrate 32 is made of glass (glass), and because the fusing point of glass is lower, TFT control circuit 46 for fear of follow-up formation impacts non-monocrystalline silicon substrate 32 because of temperature is too high, therefore TFT control circuit 46 of the present invention is required to be a low temperature polycrystalline silicon (low temperature polysilicon, LTPS) TFT control circuit.Yet the present invention is not limited thereto, and non-monocrystalline silicon substrate 32 of the present invention can also be made of quartzy institute, because quartzy fusing point is higher, therefore TFT control circuit 46 of the present invention also can be a high temperature polysilicon TFT control circuit.In addition, polysilicon beam texture 36 can be formed in one with polysilicon supporting member 38, also can separately make, and movable electrode 40 can be made of doped polycrystalline silicon or metal material, fixed electorde 42 can be made of aluminium (Al), titanium (Ti), platinum (Pt) or alloy material.
It should be noted that, in a preferred embodiment of the invention, control circuit 46 is to be located on the substrate of glass 32, right the present invention uses and is not limited thereto, and control circuit 46 of the present invention can also be located at a printed circuit board (PCB) (printed circuit board, PCB, be not shown among Fig. 2) on, utilize a flexible printed wiring board (flexible printed circuit board, FPC board is not shown among Fig. 2) to be electrically connected control circuit 46 and capacity plate antenna 44 again.In addition, control circuit 46 for example has a plurality of integrated circuit (IC) chip (integrated circuit chip, IC chip) and also can directly be located on the flexible printed wiring board, utilizes this flexible printed wiring board to be electrically connected control circuit 46 and capacity plate antenna 44 again.Moreover non-monocrystalline silicon substrate of the present invention 32 surfaces can have a TFT viewing area (display area) in addition, are used for showing the change value of pressure that condenser type acceleration sensor 30 of the present invention is detected, to make things convenient for the user to observe and to measure.
In sum, compared to existing condenser type semiconductor acceleration sensor, condenser type semiconductor acceleration sensor of the present invention is to be made in the non-monocrystalline silicon substrate, for example on substrate of glass or the quartz substrate, therefore can significantly save raw-material cost.In addition, the present invention utilizes polysilicon to form barrier film and its supporting member, also can reduce the manufacture process cost, not only is fit to volume production meeting market price demand, and can avoids the existing complex fabrication process that forms the epitaxial growth silicon layer to control with parameter.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (17)
1. condenser type acceleration sensor, it comprises:
One non-monocrystalline silicon substrate;
One polysilicon beam texture, it has a movable end, and this movable end has a movable electrode;
One polysilicon supporting member is located in this non-monocrystalline silicon substrate, is used for fixing this beam texture, makes the distance of being separated by between this beam texture and this non-monocrystalline silicon substrate;
One fixed electorde is located in this non-monocrystalline silicon substrate, corresponds to this movable end of this beam texture, and this fixed electorde and this movable electrode constitute a capacity plate antenna; And
One low-temperature polysilicon film transistor control circuit is located in this non-monocrystalline silicon substrate, and is electrically connected on this capacity plate antenna.
2. condenser type acceleration sensor as claimed in claim 1, wherein, this non-monocrystalline silicon substrate is to be a substrate of glass.
3. condenser type acceleration sensor as claimed in claim 1, wherein, this non-monocrystalline silicon substrate is to be a quartz substrate.
4. condenser type acceleration sensor as claimed in claim 1, wherein, this fixed electorde is to have aluminium, titanium, platinum or alloy material.
5. condenser type acceleration sensor as claimed in claim 1, wherein, this beam texture and this supporting structure are to be formed in one.
6. condenser type acceleration sensor as claimed in claim 5, wherein, this beam texture and this supporting member all are to have polysilicon.
7. condenser type acceleration sensor as claimed in claim 1, wherein, this movable electrode is to have doped polycrystalline silicon or metal material.
8. condenser type acceleration sensor as claimed in claim 1, wherein, this non-monocrystalline silicon substrate surface has a TFT viewing area in addition, is to be used for showing the change value of pressure that this condenser type acceleration sensor is detected.
9. condenser type acceleration sensor, it comprises:
One non-monocrystalline silicon substrate;
One cantilever beam texture is located in this non-monocrystalline silicon substrate, and it has a movable end, and this movable end has a movable electrode;
One fixed electorde is located in this non-monocrystalline silicon substrate, corresponds to this movable end of this cantilever beam texture, and constitutes a capacity plate antenna with this movable electrode; And
One low-temperature polysilicon film transistor control circuit is located in this non-monocrystalline silicon substrate, and is electrically connected on this capacity plate antenna.
10. condenser type acceleration sensor as claimed in claim 9, wherein, this fixed electorde is to have aluminium, titanium, platinum or alloy material.
11. condenser type acceleration sensor as claimed in claim 9, wherein, this cantilever beam texture has polysilicon.
12. condenser type acceleration sensor as claimed in claim 9, wherein, this movable electrode is to have doped polycrystalline silicon or metal material.
13. condenser type acceleration sensor as claimed in claim 9, wherein, this non-monocrystalline silicon substrate is to be a substrate of glass.
14. condenser type acceleration sensor as claimed in claim 9, wherein, this non-monocrystalline silicon substrate is to be a quartz substrate.
15. condenser type acceleration sensor as claimed in claim 9, wherein, this control circuit is to be located on the printed circuit board (PCB), and this control circuit utilizes a flexible printed wiring board to be electrically connected with this capacity plate antenna.
16. condenser type acceleration sensor as claimed in claim 9, wherein, this control circuit is to be located on the flexible printed wiring board, and this control circuit is to utilize this flexible printed wiring board to be electrically connected with this capacity plate antenna.
17. condenser type acceleration sensor as claimed in claim 9, wherein, this non-monocrystalline silicon substrate surface has a TFT viewing area in addition, is to be used for showing the change value of pressure that this condenser type acceleration sensor is detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031474527A CN100371718C (en) | 2003-07-10 | 2003-07-10 | capacitive acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031474527A CN100371718C (en) | 2003-07-10 | 2003-07-10 | capacitive acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1566962A CN1566962A (en) | 2005-01-19 |
| CN100371718C true CN100371718C (en) | 2008-02-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031474527A Expired - Lifetime CN100371718C (en) | 2003-07-10 | 2003-07-10 | capacitive acceleration sensor |
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| Country | Link |
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| CN (1) | CN100371718C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569155B (en) * | 2016-05-20 | 2019-03-26 | 中国计量大学 | A kind of cantilever beam interdigital capacitor magnetic field sensing probe based on giant magnetostrictive thin film |
| CN114839398A (en) * | 2022-04-27 | 2022-08-02 | 东南大学 | Capacitive flexible acceleration sensor and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951510A (en) * | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
| CN1012228B (en) * | 1985-01-21 | 1991-03-27 | 日探株式会社 | Fire alarm sensor |
| US5619050A (en) * | 1994-03-07 | 1997-04-08 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor with beam structure |
| CN1160205A (en) * | 1996-09-19 | 1997-09-24 | 东南大学 | Compoundable solid acid and alkali sensor |
| US6009753A (en) * | 1990-08-17 | 2000-01-04 | Analog Devices, Inc. | Monolithic micromechanical apparatus with suspended microstructure |
| CN1386211A (en) * | 2000-07-31 | 2002-12-18 | 索尼公司 | Liquid crystal display panel and method for manufacturing the same, and liquid crystal display |
| CN1402011A (en) * | 2002-04-12 | 2003-03-12 | 中国科学院上海微系统与信息技术研究所 | Manufacture of micromachine capacitive acceleration sensor by wet corrosion, and structure thereof |
| JP2003192364A (en) * | 2001-12-27 | 2003-07-09 | Asahi Glass Co Ltd | Synthetic quartz glass substrate |
-
2003
- 2003-07-10 CN CNB031474527A patent/CN100371718C/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1012228B (en) * | 1985-01-21 | 1991-03-27 | 日探株式会社 | Fire alarm sensor |
| US4951510A (en) * | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
| US6009753A (en) * | 1990-08-17 | 2000-01-04 | Analog Devices, Inc. | Monolithic micromechanical apparatus with suspended microstructure |
| US5619050A (en) * | 1994-03-07 | 1997-04-08 | Nippondenso Co., Ltd. | Semiconductor acceleration sensor with beam structure |
| CN1160205A (en) * | 1996-09-19 | 1997-09-24 | 东南大学 | Compoundable solid acid and alkali sensor |
| CN1386211A (en) * | 2000-07-31 | 2002-12-18 | 索尼公司 | Liquid crystal display panel and method for manufacturing the same, and liquid crystal display |
| JP2003192364A (en) * | 2001-12-27 | 2003-07-09 | Asahi Glass Co Ltd | Synthetic quartz glass substrate |
| CN1402011A (en) * | 2002-04-12 | 2003-03-12 | 中国科学院上海微系统与信息技术研究所 | Manufacture of micromachine capacitive acceleration sensor by wet corrosion, and structure thereof |
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| CN1566962A (en) | 2005-01-19 |
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Effective date of registration: 20180427 Address after: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee after: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. |
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