CN109212329A - Based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device - Google Patents
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- CN109212329A CN109212329A CN201811243901.8A CN201811243901A CN109212329A CN 109212329 A CN109212329 A CN 109212329A CN 201811243901 A CN201811243901 A CN 201811243901A CN 109212329 A CN109212329 A CN 109212329A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R29/0878—Sensors; antennas; probes; detectors
Abstract
A kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, including piezoelectric material, the piezoelectric material bottom surface adheres to bottom metal, and top surface adheres to ferromagnetic thin film and metal electrode.The beneficial effect is that: there is biggish measurement range and higher sensitivity, transient response speed is fast, possess the electric field measurement range of wideband high field intensity, and there is good temperature stability, high integration, it is small in size, high-performance, low cost, safe and reliable electric-field sensor are provided for fields such as electric system, aerospace, weather monitorings.
Description
Technical field
The present invention relates to advanced manufactures and high-performance intelligent instrumentation-novel sensor field in automation, especially
It is a kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device.
Background technique
Demand of the modern society people life to electric energy increasingly increases, and in order to improve power quality, improves utilization rate of electrical,
It is most important to develop smart grid.The core technology for establishing smart grid is to realize to energy supply end, transmission end and demand
The Real-time Feedback and dynamic of end data information adjust.Building smart grid sensor network may be implemented to power grid send out power transmission and transformation,
The real-time monitoring of each node in power supply-distribution system can not only optimize power resource configuration, moreover it is possible to reinforce electric network fault monitoring,
Improve operation of power networks reliability.
Big, the at high cost problem of the generally existing volume of the electric-field sensor now applied in the market.In aerospace field
In, it is small in size, light-weight to avoid the attack of thunderstorm since the lift-off of spacecraft needs accurate grasp high-altitude field distribution
Multi-faceted detection can be better achieved in electric-field sensor, it is easier to load lift-off, while reduce the power consumption of system；Environment
Field needs real-time on-site to monitor, therefore sensor should have the characteristics that portable, high integration；In high voltage power transmission, need pair
The various stable states of electric system and transient state operation characteristic are monitored, and accurately identify various electric network faults, and such as corona discharge dodges
Network, lightning stroke and other various overvoltage etc., this requires develop the electric-field sensor for being suitable for broadband high field intensity.Therefore it develops
High-precision micro field sensor is of great significance.
Optical electric field sensor technology is more mature, generally using photoelectric materials such as lithium niobate, lithium tantalates, senses with tradition
Device is compared, and photoelectric sensor has the advantage that the measurement that 1) anti-electromagnetic interference capability is strong, suitable for strong electrical field；2) application frequency
Bandwidth, the measurement of fast transient suitable for electric system；3) convenient for integrated, saving space reduces cost.But due to heat
The thermal expansion of release effect and material, photoelectric sensor internal temperature stability is poor, and temperature drift is serious, needs complicated temperature
Compensation circuit, which has limited photoelectric sensor environment complicated and changeable in application.
Summary of the invention
The purpose of the present invention is to solve the above problems, devise a kind of based on piezoelectricity-magnetic anisotropy coupled structure
Electric field measurement MEMS sensing device.
Mentality of designing are as follows:
The inverse piezoelectric effect of material refers to that under electric field action, material internal electric dipole moment polarizes and rotates or stretch, and makes
The material characteristic that deformation occurs.Piezoelectric material refers to a kind of dielectric material to play a major role with dipole pilot polarization, piezoelectricity
There are certain linear coupling relationships between the dielectric property and resilient nature of material, it can converts electrical signals to certain orientation
On deformation, the measurement for electric field.Compared with other electric field sensing materials, piezoelectric material has the electric field measurement model of more wide area
It encloses, high sensitivity, while having good temperature stability and environmental robustness, measurement range can cover various temporary stable states in power grid
Voltage, abnormal electromagnetic environment and various overvoltage etc..Meanwhile piezoelectric transducer is convenient for integrated and micromation.It is imitated based on piezoelectricity
The electric-field sensor answered can replace conventional voltage transformer, realize the real-time monitoring to node voltage each in electric system.
It is internal to generate strain when piezomagnetism refers to effect of the material by mechanical force, cause the magnetic conductivity of material to be sent out
Changing.Anisotropic magnetoresistive (AMR) effect refers to the resistivity of ferromagnetic material and the folder of magnetic moment direction and conductor current direction
Angle θ is related；Permalloy has very high low-intensity magnetic field magnetic conductivity, is most widely used AMR material.Iron with magnetoresistance
The deformation of magnetic material can be by changing the size and Orientation of magnetic moment, and then changes the size of material resistance.Using the electricity of amr effect
The main advantage of field sensor is that device architecture is simple, easily controllable.
Strain-coupled is the coupled modes using mechanical field as medium.Piezoelectric material generates different directions under electric field action
Deformation is coupled with the good mechanical of ferromagnetic material by piezoelectric material, converts the deformation of piezoelectric material to the shape of ferromagnetic material
Become, and then leads to the variation of ferromagnetic material resistance.Compared to interface charge coupling and exchange energy coupling, mechanical coupling fashion is to boundary
The degree of coupling in face is of less demanding, at low cost, preparation easy to process.
Microsensor based on interface strain coupling is small in size, and structure is simple, and measurement range is big, and good frequency response can
Replace traditional divided voltage mutual inductor, realizes to distribution line steady state voltage, failure and the various mistakes of transmitting electricity in electric system
The real-time monitoring of voltage transient, it can also be used to the real-time monitoring of electric field in the every field such as aerospace, meteorology.
It is an object of the present invention to:
It proposes a kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, utilizes piezoresistive material
The piezoelectric effect of material converts the mechanical deformation of piezoelectric material for external electric field and coupling is transmitted to ferromagnetic material interface, passes through iron
The piezomagnetism and magnetic anisotropy phenomenon of magnetic material, the magnetization direction of ferromagnetic material deflect, and then resistance occurs
Change.By the indirect measurement to ferromagnetic material resistance, the Inversion Calculation to external electric field is realized.
Specific design scheme are as follows:
It is a kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, including bottom metal, institute
It states and piezoelectric material is installed in bottom metal, ferromagnetic thin film, the number of the ferromagnetic thin film are installed above the piezoelectric material
Amount is four, and four ferromagnetic thin films surround rectangular configuration, a pair of diagonally upper one metal electrode of each installation of the rectangular configuration
Source electrode, metal electrode induction pole, metal electrode public pole are installed on another pair is diagonal respectively, and two metal electrode source electrodes are logical
Bridge power supply connection is crossed, the metal electrode induction pole is electrically connected with metal electrode public pole with Back end data processing circuit.
Four ferromagnetic thin films are respectively four resistance, respectively resistance R1, resistance R2, resistance R3, resistance R4.
Two metal electrode source electrodes, metal electrode induction pole, metal electrode public pole are respectively the four of Wheatstone bridge
A electrode, DC power supply feeder ear of two metal electrode source electrodes as device；The metal electrode induction pole, metal electricity
Pole public pole, output signal of the two-port potential difference as device, Back end data processing circuit accesses induction pole and public pole, real
The acquisition and processing of existing device transducing signal.
Back end data processing circuit includes signal amplifier, lock-in amplifier, voltage tester etc..The piezoelectric material
With intra-face anisotropy, the retractable of electricdomain dipole pilot and face inside dimension occurs under the electric field action of vertical direction
Become.Four ferromagnetic thin films are deposited directly to piezoelectric material surface through film micro fabrication, pass through four gold
Belong to electrode and is connected to form Wheatstone bridge.Deformation makes ferromagnetic thin film magnetization direction by interfacial mechanical coupling in piezoresistive material charge level
Rotation, and then change the potential difference of four ferromagnetic thin film resistance values and the Wheatstone bridge constituted.The Back end data
Two input terminals of processing circuit are connected with the induction pole of metal electrode and public pole respectively.
Above-mentioned technical proposal through the invention obtain based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement
MEMS sensing device, the beneficial effect is that:
The ferromagnetic nano-film of application has significant piezomagnetism and magnetic anisotropy effect, therefore deformation regulates and controls resistance
High sensitivity.
It is deflected using the magnetization direction of electric field regulation ferromagnetic material, therefore device rapid dynamic response speed, to effective
The response time of electric field pulse within 10ns, can satisfy the express speed of power grid and cross transient state, the fast transient state of thunder and lightning and the fast transient state of operation
The monitoring of equal high frequency voltages, realizes malfunction monitoring and the early warning of electric system, is the premise for realizing smart power grid fault self diagnosis
The basis and.
The piezoelectric material used is capacitive dielectric, with good insulating properties and minimum leakage current, tolerance electricity
Pressure is high, and field operation range is up to hundred kV/cm or more.In addition, piezoelectric material has good temperature stability, compared to photoelectricity
The electric field sensing device of effect, have improves temperature drift problems well.
With the advantages such as integrated level is high, small in size, at low cost, can produce in batches and on a large scale for transmission and distribution line, hair
The real-time monitoring of each node of bulk power grid has been better achieved in the places such as power plant, substation, converter station.In addition, apparatus of the present invention are
Earth-free non-intruding sensing mode distorts to space electric field small, and does not influence the voltage, active and reactive etc. electrical of primary system
Amount, the installation of device and maintenance process can also charge progress.
With adjustable electric field sensing range and lower measurement power consumption, therefore it can be widely applied to aerospace, ring
The fields such as border monitoring, industrial production, electric system provide accurate electric field measurement for the environment of gas with various medium.In addition, this
Invention device may be used as New Magnetic Field Controlled digital switch device, compared with traditional semiconductor digital switch device have high voltage,
The clear superiorities such as low energy consumption solve the problems, such as digital switch product high energy consumption in existing market, breach and step on the normal electric field of Nader
Scaling law.
Detailed description of the invention
Fig. 1 is the knot of the present invention based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device
Structure schematic diagram；
Fig. 2 is the iron of the present invention based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device
The wheatstone bridge circuitry schematic diagram that magnetic thin film resistance is constituted
In figure, 1, bottom metal；2, piezoelectric material；3, ferromagnetic thin film；4, metal electrode source electrode；5, metal electrode incudes
Pole；6, metal electrode public pole；7, bridge power supply；8, back-end processing circuit.
Specific embodiment
The present invention is specifically described with reference to the accompanying drawing.
It is a kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, including bottom metal 1,
Piezoelectric material 2 is installed, the top of the piezoelectric material 2 is equipped with ferromagnetic thin film 3, described ferromagnetic thin in the bottom metal 1
The quantity of film 3 is four, and four ferromagnetic thin films 3 surround rectangular configuration, a pair of diagonally upper each installation one of the rectangular configuration
Metal electrode source electrode 4 installs metal electrode induction pole 5, metal electrode public pole 6, two gold on another pair is diagonal respectively
Belong to electrode source electrode 4 to connect by bridge power supply 7, at the metal electrode induction pole 5 and metal electrode public pole 6 and Back end data
Circuit 8 is managed to be electrically connected.
Four ferromagnetic thin films 3 are respectively four resistance, respectively resistance R1, resistance R2, resistance R3, resistance R4.
Two metal electrode source electrodes 4, metal electrode induction pole 5, metal electrode public pole 6 are respectively Wheatstone bridge
Four electrodes, DC power supply feeder ear of two metal electrode source electrodes 4 as device；The metal electrode induction pole 5, gold
Belong to electrode public pole 6, output signal of the two-port potential difference as device, Back end data processing circuit access induction pole with it is public
The acquisition and processing of device transducing signal are realized in pole.
Embodiment 1
It is proposed by the present invention based in piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, wherein
The material selection gist of bottom metal and four metal electrodes is that electric conductivity is good, such as common aluminium, copper, platinum, gold metal, material
Material thickness can be differed from tens nanometers to several microns, and the processing method of material can be magnetron sputtering plating, chemical vapor deposition
Equal metallic films micro fabrication.The blocky piezoelectric material of cylindrical body or positive arris column may be selected in piezoelectric material therein, such as has
There are the relaxor ferroelectric crystal lead magnesio-niobate lead titanates (PMN-PT), lead lead-titanate niobium-zincate (PZN-PT) and zirconium of perovskite structure
Lead titanates (PZT) crystal etc.；Also optional piezoelectric membrane, the pzt thin film such as prepared using sol-gal process are gathered partially piezoelectric material
Fluoroethylene film and more doping copolymerized blends etc..The piezoelectric material of selection needs to have longitudinal strain or shearing in biggish face
Strain could improve the strain value being coupled on ferromagnetic thin film under electric field regulation.Ferromagnetic thin film therein can be monofilm or more
Tunic, using the films micro fabrication such as magnetron sputtering plating or chemical vapor deposition, material need to have good pressure magnetic simultaneously
Effect and anisotropy magnetic effect, feasible material include the single layers ferromagnetic thin films such as permalloy, Haas Le alloy and have each
The multilayers ferromagnetic thin films, such as Ni such as anisotropy magneto-resistor, giant magnetoresistance, tunneling junction magnetoresistive, huge magneto-resistor60Fe40、Ni80Co20、
Co35Fe65, CoFeSi, CoFeB, FeGaB, giant magnetoresistance tunnel knot etc..Back end data processing circuit can select U7227A type
Number signal amplifier carry out the primary amplification of sensing voltage signal, select the lock-in amplifier of SR830 model that frequency is fixed
The crawl of rate phase, the output signal after selecting the voltage tester reading process of HDO6054A model.
Embodiment 2
As shown in Figure 1, set the length of four ferromagnetic thin films as I, width W.If electric field through-thickness to be measured, with piezoelectricity
Material pre-polarizing direction is consistent.Assuming that piezoelectric effect be it is linear, can with piezoelectricity constant coefficient characterize, ignore shear strain, then dispatch from foreign news agency
Under the E effect of field, ferromagnetic thin film resistance and output voltage UoIt is represented by
Wherein, d31And d32Respectively piezoelectric material is in 1 direction (direction x in coordinate system) and 2 the directions (side y in coordinate system
To) on piezoelectricity constant coefficient, can be found from material parameter handbook；Wheatstone bridge direct current supply voltage source amplitude is Us；ρ
(θ) is ferromagnetic thin film resistivity, and θ is the angle of magnetization direction and current direction, with formula ρ (θ)=ρ0+Δρ.cos2(θ)
Characterization.Current direction is the long axis direction of resistance, and the direction of the intensity of magnetization is determined by the energy of system, main here to consider
Induction magnetic anisotropy energy, shape anisotropy energy and magnetoelastic energy answer stress required for fully rotating 90 ° of the intensity of magnetization
Meet formula (4),
Wherein σ is stress, MsAnd λsRespectively saturated magnetization coefficient and magnetostriction coefficient, Hk=2 (Ku1+Ku2)/Ms, Ku1
And Ku2It is the single order and second order components of uniaxial anisotropy coefficient, NyAnd NxIt is the demagnetizing factor of two vertical direction in plane.
Aggregative formula (3) and (4), highly sensitive electric field sensing device, electric field regulate and control two key factors of magnetic property in order to obtain
It is ferromagnetic thin film length-width ratio l/W and external magnetic field Hext, the former is the key that realize magnetic anisotropy, and the latter is that device has chosen conjunction
Suitable working region.
It is carried out using proposed by the present invention based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device
It calculates and tests, with 100nm thickness Ni60Fe40It is mono- as ferroelectric thin film, the polarized bulk PMN-32%PT of 300 μ m-thick <, 011 >
Crystalline substance is calculated, the intensity of magnetization of the ferromagnetic thin film by shape than 1: 1 to 29: 1 as piezoelectric material according to formula (4)
It is 236.8MPa-1657.6MPa that direction, which is rotated by 90 ° required stress, and equivalent vertical direction electric field is 12.8kV/cm-89.6kV/
cm.Within the scope of the DC electric field of -20kV/cm to 20kV/cm, there is sensing device good electric field to regulate and control anisotropy magnetoelectricity
The performance of resistance, response sensitivity reach 0.15mV/ (kV/cm), and for duplicate measurements error less than 1%, optimum shape is optimal inclined than 29: 1
It is set to the external magnetic field of 45 ° of direction 40Oe amplitudes.In addition, apparatus of the present invention have the advantages that fast response time, application is calculated
Stable time about 4ns is opened and reached when the impulse electric field of amplitude 20kV/cm, turns off and reaches stable time about
2ns.This example demonstrates sensing devices of the present invention in electric field stable state and the superiority of transient measuring process.
Above-mentioned technical proposal only embodies the optimal technical scheme of technical solution of the present invention, those skilled in the art
The principle of the present invention is embodied to some variations that some of them part may be made, belongs to the scope of protection of the present invention it
It is interior.
Claims (3)
1. a kind of based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device, which is characterized in that including pressure
Electric material (2), piezoelectric material (2) bottom surface adhere to bottom metal (1), and top surface adheres to ferromagnetic thin film (3), the ferromagnetic thin film
(3) quantity is four, and four ferromagnetic thin films (3) surround the rectangular configuration with electrical communication by four metal electrode connections,
A pair of the rectangular configuration diagonal upper installation a pair of metal electrodes source electrode (4) installs institute on another pair is diagonal respectively
The metal electrode induction pole (5) and metal electrode public pole (6) stated, two metal electrode source electrodes (4) pass through electric bridge and electricity
Source (7) connection, the metal electrode induction pole (5) electrically connect with metal electrode public pole (6) and Back end data processing circuit (8)
It connects.
2. it is according to claim 1 based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device,
It is characterized in that, four ferromagnetic thin films (3) are respectively four resistance, it is expressed as resistance R1, resistance R2, resistance R3, electricity
Hinder R4。
3. it is according to claim 1 based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device,
It is characterized in that, two metal electrode source electrodes (4), the metal electrode induction pole (5), the metal electrode public pole
(6) be respectively Wheatstone bridge four electrodes, two metal electrode source electrodes (4) as device DC power supply power
End；The metal electrode induction pole (5), metal electrode public pole (6), output signal of the two-port potential difference as device, after
End data processing circuit accesses induction pole and public pole, realizes the acquisition and processing of device transducing signal.
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| CN114113812A (en) * | 2021-11-23 | 2022-03-01 | 清华大学 | Cantilever type micro electric field sensor driven by electric field force |
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