CN104237652A - Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle - Google Patents
Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle Download PDFInfo
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Abstract
The invention relates to a beam membrane structure high-voltage electrostatic field sensor chip based on the voltage-sensitive principle. The beam membrane structure high-voltage electrostatic field sensor chip comprises a substrate, a silicon structure layer is arranged on the substrate, and an upper pole plate is arranged on the silicon structure layer. The upper surface of the substrate is connected with the lower surface of the silicon structure layer in an anodic bonding mode, the upper surface of the silicon structure layer is connected with the lower surface of the upper pole plate in an anodic bonding mode, the electrostatic field force is measured according to the piezoresistance principle, and the electrostatic field intensity is accordingly obtained. The beam and membrane combining mode is adopted, so that the measuring sensitivity is greatly improved; a mass block is not arranged on a central membrane of the chip, the thickness is small, a force bearing membrane is supported by four beams, the structural stiffness is improved, the frequency response of the sensor chip is high, connection is simple, resistor stripes and leads are easily distributed, the structure is stable, the manufacturing process is mature, the reliable packaging method is adopted, and therefore the chip can be suitable for various different environments. The chip is low in unit cost after volume production is achieved; in addition, connecting and installing are easily and conveniently achieved, and the chip is suitable for large-scale application in an industrial site.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (MEMS) high-voltage electrostatic field sensor technical field; Be specifically related to a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle.
Background technology
High-voltage power capacitor is widely used in electric system and testing station, electric charge stored by capacitor remains static, be difficult to by the perception of general metering system institute, comprise electromagnetic induction, the principles such as magnetic-field measurement and method, at present, for device and the product of high-pressure electrostatic sensing, comprise orbiting vane, the electrostatic measuring device of capacitance-type vibration formula, due to its volume, power consumption is large and cost is higher, technically, be difficult to be applied to the high-voltage capacitor that power department is equipped in a large number economically, therefore, the human casualty accident that the invisibility storing electric charge by capacitor every year causes appears in the newspapers repeatly, to family, enterprise and society cause irremediable loss.In addition, during high voltage electrostatic discharge, transient pulse big current can be produced, and along with strong electromagnetic radiation, directly affect the normal operation of the electronics such as control system, surveying instrument electrostatic sensitive equipment in laboratory, even there is the hidden danger of initiation fire blast.Therefore the monitoring of high-pressure electrostatic becomes the study hotspot of electrical equipment in recent years.
Measurement high-voltage electrostatic field being carried out to direct contact type is easy method, but its static high pressure of busbar be connected with energy storage device can reach tens kV to kV up to a hundred, this makes the equipment directly measuring high-voltage electrostatic field need have larger insulation surplus, and its volume cannot realize miniaturization.And the usual layout of high-voltage busbar is complicated, and cabling is longer, will carry out Real-Time Monitoring to its high-pressure electrostatic, need a large amount of directly surveying instrument just can complete, this to space and cost requirement very high.Large quantity research starts to lay particular emphasis on the contactless indirect inspection to high-voltage electric field in recent years, the multiple electric-field sensor based on mechanical type or optical profile type of research and design.But in electrostatic field, electric field cannot provide lasting energy to sensor, the electric charge on high-pressure conductor can not continue to maintain macroscopic motion, and this becomes the difficult point that electrostatic field is measured, and makes the sensitivity of current electric-field sensor to low frequency or electrostatic field lower.Meanwhile, there is the shortcomings such as complex structure, volume are comparatively large, cost is higher in the sensor that can be used in measuring high-voltage electrostatic field at present, cannot realize large batch of production.And in electric system or electrical laboratory operational process, on-line monitoring need be carried out with a large amount of contactless indirect inspection instrument each eventful spots to high-voltage busbar, to ensure the safety of operating personnel and electronic equipment, therefore existing electric-field sensor cannot meet this requirement.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle, have highly sensitive, frequency response is high, stable performance, suitable environment is wide, cost is low, be easy to the advantages such as large-scale application.
In order to achieve the above object, the technical scheme that the present invention takes is:
Based on a beam diaphragm structure high-voltage electrostatic field sensor chip for pressure-sensitive principle, comprise substrate 3, substrate 3 is provided with silicon structural layer 2, silicon structural layer 2 is provided with top crown 1; The upper surface of substrate 3 is connected by anode linkage with the lower surface of silicon structural layer 2, and the upper surface of silicon structural layer 2 is connected by anode linkage with the lower surface of top crown 1.
Described top crown 1 is the electrode of glass plate 1-1 plated metal, rectangle fixing metal membrane electrode 1-2 is furnished with in glass plate 1-1 lower surface central region, side, the long limit arranged alongside first Electrode connection dish 1-4 of fixing metal membrane electrode 1-2, fixing metal membrane electrode 1-2 are connected with the first Electrode connection dish 1-4 by the first lead-in wire 1-3.
Described silicon structural layer 2 comprises silicon substrate 2-1, on silicon substrate 2-1 top, etching forms anti-absorption groove 2-2, the load film 2-3 of anti-absorption groove 2-2 arranged beneath rectangle, load film 2-3 is connected with the rectangular susceptor of silicon substrate 2-1 by four sensitive beam, four sensitive beam are the first sensitive beam 2-5-1, second sensitive beam 2-5-2, 3rd sensitive beam 2-5-3, 4th sensitive beam 2-5-4, sensitive beam is arranged between the minor face of the rectangular susceptor minor face of silicon substrate 2-1 and the load film 2-3 of rectangle, be parallel to the long limit of load film 2-3, and the outer long side of every root sensitive beam is concordant with the long limit of load film 2-3, load film 2-3 upper surface is coated with movable metal film electrode 2-6 completely, movable metal film electrode 2-6 is connected to by the second lead-in wire 2-8 and is arranged in 8, silicon structure upper surface minor face side pad 2-11 first pad, silicon substrate bottom and load film arranged beneath back of the body chamber 2-4, voltage dependent resistor (VDR) bar is arranged in two sensitive beam, wherein, first resistor stripe 2-7-1 and the second resistor stripe 2-7-2 is arranged in the 3rd sensitive beam 2-5-3 upper surface, near the region of stress concentration of the 3rd sensitive beam 2-5-3 stiff end, 3rd resistor stripe 2-7-3 and the 4th resistor stripe 2-7-4 is arranged in the 4th sensitive beam 2-5-4 upper surface, near the region of stress concentration of the 4th sensitive beam 2-5-4 stiff end, four resistor stripes are connected to the second to the seven pad in pad 2-11 by the 3rd lead-in wire 2-9, Wheatstone bridge is formed by external circuits, the rectangular boss upper surface of anti-absorption groove 2-2 side, silicon structure top arranges the second Electrode connection dish 2-12 being used for upper/lower electrode and being communicated with, and the second Electrode connection dish 2-12 is connected with the 8th pad in pad 2-11 by the 4th lead-in wire 2-10,
The first described resistor stripe 2-7-1 and the 4th resistor stripe 2-7-4 is two-fold, i.e. U-shaped structure, is parallel to stress direction and namely arranges along the maximum direction of piezoresistance coefficient; Second resistor stripe 2-7-2 and the 3rd resistor stripe 2-7-3 is four fold, i.e. W shape structure, and arrange perpendicular to stress direction, the effective length of four resistor stripes is equal, and the distribution of residing regional stress is close, is convenient to follow-uply build electric bridge;
Interconnect by the first Electrode connection dish 1-4 with the second Electrode connection dish 2-12 between described fixing metal membrane electrode 1-2 and movable metal film electrode 2-6.
The described anti-absorption groove 2-2 degree of depth is 2 μm.
Described load film 2-3 thickness is 30 μm, length 3500 μm, width 2000 μm, and inside the long limit of film and silicon substrate 2-1, the gap on long limit is 10 μm.
Four described sensitive beam 2-5-1,2-5-2,2-5-3 and 2-5-4 thickness are 30 μm, and length is 500 μm, and width is 140 μm.
Advantage of the present invention: the present invention adopts piezoresistive principles measurement of electrostatic field force, thus obtains electrostatic field intensity.In sensor chip structural design, adopt the mode of cantilever beam, improve sensitizing range stress localization effects by optimizing, measurement sensistivity is greatly improved.Chip center's film is not with mass, and thickness is little, and adopts four beams to support load film, and improve the rigidity of structure, thus sensor chip frequency response is high.Sensor chip load film and brace summer are in same plane, connect succinct, and resistor stripe and lead-in wire layout are easy to realize, Stability Analysis of Structures, and the manufacture craft adopted is ripe, and thus chip performance is stablized; Adopt reliable method for packing, chip can be made to adapt to multiple varying environment; Chip batchization produce after single cost very low, and interface and installation very easy, be applicable to industry spot large-scale application.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention, and wherein scheming (a) is longitudinal sectional view, and figure (b) is transverse sectional view.
Fig. 2 is top crown 1 structural representation.
Fig. 3 is the transverse sectional view of silicon structural layer 2.
Fig. 4 is silicon structural layer 2 front view.
Fig. 5 is sensor operating principles schematic diagram.
Fig. 6 is resistor stripe composition Wheatstone bridge schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
With reference to Fig. 1, a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle, comprises substrate 3, substrate 3 is provided with silicon structural layer 2, silicon structural layer 2 is provided with top crown 1; The upper surface of substrate 3 is connected by anode linkage with the lower surface of silicon structural layer 2, and the upper surface of silicon structural layer 2 is connected by anode linkage with the lower surface of top crown 1.
With reference to Fig. 2, described top crown 1 is the electrode of glass plate 1-1 plated metal, rectangle fixing metal membrane electrode 1-2 is furnished with in glass plate 1-1 lower surface central region, side, the long limit arranged alongside first Electrode connection dish 1-4 of fixing metal membrane electrode 1-2, fixing metal membrane electrode 1-2 are connected with the first Electrode connection dish 1-4 by the first lead-in wire 1-3.
Described glass plate 1-1 is Pyrex7740 glass, and described fixing metal membrane electrode 1-2, the first lead-in wire 1-3 and the first Electrode connection are Cr/Au composite bed, and wherein Cr ensure that combining closely of metal level and glass, and Au is conductive layer.
With reference to Fig. 3 and Fig. 4, described silicon structural layer 2 comprises silicon substrate 2-1, on silicon substrate 2-1 top, etching forms anti-absorption groove 2-2, the load film 2-3 of anti-absorption groove 2-2 arranged beneath rectangle, load film 2-3 is connected with the rectangular susceptor of silicon substrate 2-1 by four sensitive beam, four sensitive beam are the first sensitive beam 2-5-1, second sensitive beam 2-5-2, 3rd sensitive beam 2-5-3, 4th sensitive beam 2-5-4, sensitive beam is arranged between the minor face of the rectangular susceptor minor face of silicon substrate 2-1 and the load film 2-3 of rectangle, be parallel to the long limit of load film 2-3, and the outer long side of every root sensitive beam is concordant with the long limit of load film 2-3, load film 2-3 upper surface is coated with movable metal film electrode 2-6 completely, movable metal film electrode 2-6 is connected to by the second lead-in wire 2-8 and is arranged in 8, silicon structure upper surface minor face side pad 2-11 first pad, silicon substrate bottom and load film arranged beneath back of the body chamber 2-4, voltage dependent resistor (VDR) bar is arranged in two sensitive beam, wherein, first resistor stripe 2-7-1 and the 2nd 2-7-2 is arranged in the 3rd sensitive beam 2-5-3 upper surface, near the region of stress concentration of the 3rd sensitive beam 2-5-3 stiff end, 3rd resistor stripe 2-7-3 and the 4th resistor stripe 2-7-4 is arranged in the 4th sensitive beam 2-5-4 upper surface, near the region of stress concentration of the 4th sensitive beam 2-5-4 stiff end, four resistor stripes are connected to the second to the seven pad in pad 2-11 by the 3rd lead-in wire 2-9, Wheatstone bridge is formed by external circuits, the rectangular boss upper surface of anti-absorption groove 2-2 side, silicon structure top arranges the second Electrode connection dish 2-12 being used for upper/lower electrode and being communicated with, and the second Electrode connection dish 2-12 is connected with the 8th pad in pad 2-11 by the 4th lead-in wire 2-10.
First on silicon substrate 2-1 front, produce anti-absorption groove 2-2 by ion etching, its effect reserves the space between fixing metal membrane electrode 1-2 and movable metal film electrode 2-6, prevents the two absorption from causing sensor failure.Then obtain carrying on the back chamber 2-4 in the below of silicon substrate 2-1 etching by anisotropic etching, be etched in silicon substrate 2-1 front with RIE again and correspond to back of the body limit, a chamber four etching release load film 2-3 and four sensitive beam 2-5-1,2-5-2,2-5-3,2-5-4, obtain the load film 2-3 for bearing electrostatic field force, the thickness of load film 2-3 is 30 μm, length 3500 μm, width is 2000 μm, for experiencing four sensitive beam 2-5-1,2-5-2,2-5-3,2-5-4 of stress.The thickness of four sensitive beam is 30 μm, length 500 μm, width 140 μm.As Fig. 4, beam is arranged between the minor face of minor face and load film 2-3 inside silicon substrate 2-1, is parallel to the long limit of load film 2-3, and the long limit, side of every root beam is concordant with the long limit of film.At load film 2-3 upper surface depositing metallic films, this metal film can move up and down along with load film, as movable metal film electrode 2-6, be connected to by the second lead-in wire 2-8 pad 2-11 (totally 8 pads) the first pad being arranged in silicon structure upper surface minor face side.The first resistor stripe 2-7-1 and the second resistor stripe 2-7-2 is made near stiff end by ion injection method 2-5-3 top in sensitive beam; The 3rd resistor stripe 2-7-3 and the 4th resistor stripe 2-7-4 is made near stiff end on sensitive beam 2-5-4 top; Four resistor stripes are connected to the second to the seven pad in pad 2-11 by the 3rd lead-in wire 2-9, are combined to form semi-loop Wheatstone bridge, for stress mornitoring by external circuits.
First resistor stripe 2-7-1 and the 4th resistor stripe 2-7-4 is two-fold, i.e. U-shaped structure, and be parallel to stress and arrange along the maximum direction of piezoresistance coefficient, the second resistor stripe 2-7-2 and the 3rd resistor stripe 2-7-3 is four fold, i.e. W shape structure, arranges perpendicular to stress direction.The effective length of four resistor stripes is equal, and the distribution of residing regional stress is close, is convenient to follow-uply build electric bridge.
Interconnect by the first Electrode connection dish 1-4 with the second Electrode connection dish 2-12 between described fixing metal membrane electrode 1-2 and movable metal film electrode 2-6.
The described anti-absorption groove 2-2 degree of depth is 2 μm.
Described load film 2-3 thickness is 30 μm, length 3500 μm, width 2000 μm, and inside the long limit of film and silicon substrate 2-1, the gap on long limit is 10 μm.
Four described sensitive beam 2-5-1,2-5-2,2-5-3 and 2-5-4 thickness are 30 μm, and length is 500 μm, and width is 140 μm.
Principle of work of the present invention is:
With reference to Fig. 5, top crown 1 lower surface completed and silicon structural layer 2 upper surface are aimed at, is connected together by anode linkage method, make fixing metal membrane electrode 1-2 and movable metal film electrode 2-6 form reliable parallel-plate electrode pair.Fixing metal membrane electrode 1-2 and movable metal film electrode 2-6 realizes interconnecting by the first Electrode connection dish 1-4 and the second Electrode connection dish 2-12, and in measurement, the two contact electrification body forms equipotential volume.Along with change in voltage, the electric field intensity between battery lead plate increases, and interaction force increases; Top crown 1 is very large relative to load film 2-3 thickness, thus rigid body can be regarded as, so load film 2-3 moves down under the promotion of electrostatic field force, thus sensitive beam is bent downwardly under the drive of film, there is large stress in arrangement and design of the resistors region, cause resistor stripe change in resistance, four resistor stripe composition Wheatstone bridges, by bridge output voltage by stress measurement out, so the size of electric field force can be obtained, and then measured electrostatic field intensity is obtained.
In the present invention, the Wheatstone bridge group bridge mode of sensor as shown in Figure 6, adopts semi-loop form, can record the resistance of each resistor stripe easily and carry out required compensation.
Due to the present invention's application piezoresistive principles measurement of electrostatic field force, sensor only needs to use 5V voltage fed at work; Because resistor stripe resistance is comparatively large, at about 1kV, therefore in working sensor, power pole is low.Relative to the sensor of the forms such as vibrating grid, its energy consumption is almost negligible.Sensor construction main body is the form that the film of silicon wafer to manufacture is combined with sensitive beam, and structure is simple, and manufacture craft is succinct, thus makes the high and stable work in work of yield rate, goes for more occasions.Compare the sensor such as vibrating grid and optical profile type, its stable performance characteristic and system succinctness property can ensure long-time widespread adoption, have more practicality for solution industry spot technical matters.
Claims (6)
1. the beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle, comprise substrate (3), it is characterized in that: in substrate (3), be provided with silicon structural layer (2), silicon structural layer (2) is provided with top crown (1); The upper surface of substrate (3) is connected by anode linkage with the lower surface of silicon structural layer (2), and the upper surface of silicon structural layer (2) is connected by anode linkage with the lower surface of top crown (1).
2. a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle according to claim 1, it is characterized in that: described top crown (1) is the electrode of glass plate (1-1) plated metal, rectangle fixing metal membrane electrode (1-2) is furnished with in glass plate (1-1) lower surface central region, the side, long limit arranged alongside first Electrode connection dish (1-4) of fixing metal membrane electrode (1-2), fixing metal membrane electrode (1-2) is connected with the first Electrode connection dish (1-4) by the first lead-in wire (1-3).
3. a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle according to claim 1, it is characterized in that: described silicon structural layer (2) comprises silicon substrate (2-1), on silicon substrate (2-1) top, etching forms anti-absorption groove (2-2), the load film (2-3) of anti-absorption groove (2-2) arranged beneath rectangle, load film (2-3) is connected by the rectangular susceptor of four sensitive beam with silicon substrate (2-1), four sensitive beam are the first sensitive beam (2-5-1), second sensitive beam (2-5-2), 3rd sensitive beam (2-5-3), 4th sensitive beam (2-5-4), sensitive beam is arranged between the minor face of the rectangular susceptor minor face of silicon substrate (2-1) and the load film (2-3) of rectangle, be parallel to the long limit of load film (2-3), and the outer long side of every root sensitive beam is concordant with the long limit of load film (2-3), load film (2-3) upper surface is coated with movable metal film electrode (2-6) completely, movable metal film electrode (2-6) is connected to by the second lead-in wire (2-8) and is arranged in 8, silicon structure upper surface minor face side pad (2-11) first pad, silicon substrate bottom and load film arranged beneath back of the body chamber (2-4), voltage dependent resistor (VDR) bar is arranged in two sensitive beam, wherein, first resistor stripe (2-7-1) and the second resistor stripe (2-7-2) are arranged in the 3rd sensitive beam (2-5-3) upper surface, near the region of stress concentration of the 3rd sensitive beam (2-5-3) stiff end, 3rd resistor stripe (2-7-3) and the 4th resistor stripe (2-7-4) are arranged in the 4th sensitive beam (2-5-4) upper surface, near the region of stress concentration of the 4th sensitive beam (2-5-4) stiff end, four resistor stripes are connected to the second to the seven pad in pad (2-11) by the 3rd lead-in wire (2-9), Wheatstone bridge is formed by external circuits, the rectangular boss upper surface of anti-absorption groove (2-2) side, silicon structure top arranges the second Electrode connection dish (2-12) being used for upper/lower electrode and being communicated with, second Electrode connection dish (2-12) is connected with the 8th pad in pad (2-11) by the 4th lead-in wire (2-10),
Described the first resistor stripe (2-7-1) and the 4th resistor stripe (2-7-4) are two-fold, i.e. U-shaped structure, are parallel to stress direction and namely arrange along the maximum direction of piezoresistance coefficient; Second resistor stripe (2-7-2) and the 3rd resistor stripe (2-7-3) are four folds, i.e. W shape structure, and arrange perpendicular to stress direction, the effective length of four resistor stripes is equal, and the distribution of residing regional stress is close, are convenient to follow-uply build electric bridge;
By the first Electrode connection dish (1-4) and the interconnection of the second Electrode connection dish (2-12) between described fixing metal membrane electrode (1-2) and movable metal film electrode (2-6).
4. a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle according to claim 3, is characterized in that: described anti-absorption groove (2-2) degree of depth is 2 μm.
5. a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle according to claim 3, it is characterized in that: described load film (2-3) thickness is 30 μm, length 3500 μm, width 2000 μm, the gap on the long limit in the long limit of film and silicon substrate (2-1) inner side is 10 μm.
6. a kind of beam diaphragm structure high-voltage electrostatic field sensor chip based on pressure-sensitive principle according to claim 3, it is characterized in that: four described sensitive beam (2-5-1,2-5-2,2-5-3,2-5-4) thickness are 30 μm, length is 500 μm, and width is 140 μm.
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| CN104569626A (en) * | 2015-01-13 | 2015-04-29 | 西安交通大学 | Electrostatic field sensor and electrostatic alarm system and method based on electrostatic field sensor |
| CN105668500A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | High-sensitivity wide-range force sensor and manufacturing method thereof |
| CN108732416A (en) * | 2018-06-04 | 2018-11-02 | 西安交通大学 | A kind of MEMS micromirror high-pressure electrostatic sensor of front-end digital |
| CN108828291A (en) * | 2018-06-04 | 2018-11-16 | 西安交通大学 | One kind being used for high-pressure electrostatic voltage MEMS micromirror sensor measured directly |
| CN109212329A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device |
| CN109581082A (en) * | 2018-12-25 | 2019-04-05 | 中国科学院电子学研究所 | Trigone structure mini three-dimensional electric field sensor and technology of preparing based on micro-group dress |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN114487547A (en) * | 2022-01-14 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Piezoelectric piezoresistive electric field sensor with silicon substrate reversely-arranged bonded glass structure |
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| CN104569626A (en) * | 2015-01-13 | 2015-04-29 | 西安交通大学 | Electrostatic field sensor and electrostatic alarm system and method based on electrostatic field sensor |
| CN105668500A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | High-sensitivity wide-range force sensor and manufacturing method thereof |
| CN108732416A (en) * | 2018-06-04 | 2018-11-02 | 西安交通大学 | A kind of MEMS micromirror high-pressure electrostatic sensor of front-end digital |
| CN108828291A (en) * | 2018-06-04 | 2018-11-16 | 西安交通大学 | One kind being used for high-pressure electrostatic voltage MEMS micromirror sensor measured directly |
| CN108732416B (en) * | 2018-06-04 | 2020-06-19 | 西安交通大学 | MEMS micro-mirror high-voltage electrostatic sensor with digital front end |
| CN108828291B (en) * | 2018-06-04 | 2021-07-13 | 西安交通大学 | MEMS micro-mirror sensor for directly measuring high-voltage electrostatic voltage |
| CN109212329A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | Based on piezoelectricity-magnetic anisotropy coupled structure electric field measurement MEMS sensing device |
| CN109581082A (en) * | 2018-12-25 | 2019-04-05 | 中国科学院电子学研究所 | Trigone structure mini three-dimensional electric field sensor and technology of preparing based on micro-group dress |
| CN109581082B (en) * | 2018-12-25 | 2020-09-25 | 中国科学院电子学研究所 | Triangular structure micro three-dimensional electric field sensor based on micro assembly and preparation technology |
| CN112505438A (en) * | 2020-11-26 | 2021-03-16 | 清华大学 | Miniature electric field sensing device based on electrostatic force and piezoresistive effect |
| CN114487547A (en) * | 2022-01-14 | 2022-05-13 | 南方电网数字电网研究院有限公司 | Piezoelectric piezoresistive electric field sensor with silicon substrate reversely-arranged bonded glass structure |
| CN114487547B (en) * | 2022-01-14 | 2023-08-04 | 南方电网数字电网研究院有限公司 | Piezoelectric piezoresistance type electric field sensor with silicon substrate reversely-bonded glass structure |
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