CN104569626A - Electrostatic field sensor and electrostatic alarm system and method based on electrostatic field sensor - Google Patents
Electrostatic field sensor and electrostatic alarm system and method based on electrostatic field sensor Download PDFInfo
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- CN104569626A CN104569626A CN201510017468.6A CN201510017468A CN104569626A CN 104569626 A CN104569626 A CN 104569626A CN 201510017468 A CN201510017468 A CN 201510017468A CN 104569626 A CN104569626 A CN 104569626A
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Abstract
The invention discloses an electrostatic field sensor and an electrostatic alarm system and method based on the electrostatic field sensor. The electrostatic field sensor comprises a fixed end, a first wiring end, a second wiring end, a third wiring end, a fourth wiring end, a fifth wiring end, a sixth wiring end, a suspension girder, a first electrode plate, a second electrode plate, a first voltage dependent resistor, a second voltage dependent resistor, a third voltage dependent resistor, a fourth voltage dependent resistor, a constant-voltage source, a vibration sensor, a single-chip microcomputer and a terminal. The terminal comprises an alarm and a displayer. By means of the electrostatic field sensor, the electrostatic potential value of a produced electrostatic field can be effectively measured, and an alarm is given when the electrostatic potential value exceeds a threshold value; the electrostatic field sensor is simple in structure, high in sensitivity, convenient to operate and high in adaptability.
Description
Technical field
The invention belongs to static charge detection technology field, relate to a kind of electrostatic field sensor, based on the electrostatic warning system of electrostatic field sensor and method.
Background technology
Electric field is produced by electric charge, the electric charge producing electrostatic field is in static state, be difficult to by the perception of general metering system institute, simultaneously, in a lot of situation the existence of electrostatic field again in actual production life for field staff, equipment bring great potential safety hazard, therefore electrostatic field detection technology to have a wide range of applications demand at industrial circle.
In electrical engineering, eliminate at present electrostatic field harm mainly carry out in " preventing " and " putting " two, namely when off working state by equipment reliable ground, prevent the accumulation of static charge; First ground connection after end-of-job or when needing contact, bleeds off the electric charge may deposited thereon." to prevent " or " putting " all intuitively cannot be understood and whether electrical equipment exist electric charge, have accumulated how many electric charges, protection preventive measure fully can only be relied on to keep the scene intact the safety of staff.
Trek, Inc. of the U.S. in 2005 proposes and a kind ofly applies the scheme that high frequent vibration semi-girder carries out non-contacting electrostatically measurement, and has applied for the patent of measurement of correlation scheme.2013, Japanese industries Technical Integration Studies institute was according to above principle, and the electrostatic transducer that have employed MEMS (microelectromechanical systems) fabrication techniques is shown in Japan's " Nano Micro Business " exhibition.
But this oscillatory type sensing mode, because the factors such as temperature, humidity, mechanical encapsulation can interfere with the resonance frequency of sensor, thus its operation stability cannot be guaranteed under complex working condition.And Vibratory transducer complex structure, high to operating environment requirements, these all limit it and assemble on a large scale, cannot meet requirement of engineering.
Summary of the invention
The object of the invention is to the shortcoming overcoming above-mentioned prior art, provide a kind of electrostatic field sensor, based on the electrostatic warning system of electrostatic field sensor and method, sensor, system and method effectively can measure the electrostatic potential value producing electrostatic field, and structure is simple, highly sensitive, easy to operate, strong adaptability.
For achieving the above object, electrostatic field sensor of the present invention comprises stiff end, first terminals, second terminals, 3rd terminals, 4th terminals, 5th terminals, 6th terminals, overarm, first battery lead plate, second battery lead plate, first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), 3rd voltage dependent resistor (VDR), 4th voltage dependent resistor (VDR) and constant pressure source, one end of overarm is fixed on stiff end, and the second battery lead plate is fixed on the side of the overarm other end, the first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are arranged at the side of overarm all vertically, and stiff end, first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are all positioned at the same side of overarm, gap is had between first battery lead plate and the second battery lead plate, first battery lead plate is fixed on directly over the second battery lead plate, first terminals are connected with one end of the first voltage dependent resistor (VDR), second terminals are connected with the other end of the first voltage dependent resistor (VDR) and one end of the second voltage dependent resistor (VDR), 6th terminals are connected with the other end of the second voltage dependent resistor (VDR) and one end of the 4th voltage dependent resistor (VDR), 5th terminals are connected with the other end of the 4th voltage dependent resistor (VDR) and one end of the 3rd voltage dependent resistor (VDR), 4th terminals are connected with the other end of the 3rd voltage dependent resistor (VDR), and the 3rd terminals are connected with the second battery lead plate,
During detection, the electrostatic potential producing electrostatic field is incorporated on the first battery lead plate, and the electrostatic potential introducing producing electrostatic field is incorporated on the second battery lead plate through the 3rd terminals, first terminals are connected with the 4th terminals, the two ends of constant pressure source are connected with the second binding post and the 5th binding post respectively, and the 6th binding post and the first binding post or the 4th binding post are as the output terminal of described electrostatic field sensor.
Also comprise silicon-based microelectromechanical chip, the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) all adopt the method for ion implantation or diffusion processing to be produced on silicon-based microelectromechanical chip.
Electrostatic warning system of the present invention comprises electrostatic field sensor, vibration transducer, single-chip microcomputer and terminal, terminal comprises alarm and display, the 6th terminals in electrostatic field sensor and the output terminal of the 4th terminals and vibration transducer are all connected with the input end of single-chip microcomputer, and the output terminal of single-chip microcomputer is connected with the input end of the control end of warning horn and display.
Also comprise filtering circuit, amplifying circuit and A/D change-over circuit, the 6th terminals in electrostatic field sensor and the output terminal of the 4th terminals and vibration transducer are connected with the input end of single-chip microcomputer by filtering circuit, amplifying circuit and A/D change-over circuit all successively, and vibration transducer is fixed in overarm.
Electrostatic alarm method of the present invention comprises the following steps:
1) when first time uses or calibrates described electrostatic field sensor, first obtain the resistance value under the resistance value under described first voltage dependent resistor (VDR) normal condition, the resistance value under the second voltage dependent resistor (VDR) normal condition, the resistance value under the 3rd voltage dependent resistor (VDR) normal condition and the 4th voltage dependent resistor (VDR) normal condition, then the resistance value under the resistance value under the resistance value under the first voltage dependent resistor (VDR) normal condition, the second voltage dependent resistor (VDR) normal condition, the resistance value under the 3rd voltage dependent resistor (VDR) normal condition and the 4th voltage dependent resistor (VDR) normal condition is input in single-chip microcomputer;
2) the first terminals and the 4th terminals are connected, again the electrostatic potential producing electrostatic field is linked on the first battery lead plate and the second battery lead plate, first battery lead plate and the second battery lead plate are subject to the effect of power, overarm is bent, and then make the first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), 3rd voltage dependent resistor (VDR), resistance in 4th voltage dependent resistor (VDR) changes, gather the voltage signal on the 6th terminals and the 4th terminals respectively, then the voltage signal on described 6th terminals and the voltage signal on the 4th terminals are input in single-chip microcomputer, single-chip microcomputer is according to the voltage signal on described 6th terminals, voltage signal on 4th terminals, resistance value under first voltage dependent resistor (VDR) normal condition, resistance value under second voltage dependent resistor (VDR) normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) normal condition and the 4th voltage dependent resistor (VDR) normal condition obtains the first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), the size of the power that the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are subject to, then according to the first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), the flexibility that the size of the power that the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are subject to must be hung oneself from a beam, vibration transducer detects the vibration signal of overarm simultaneously, then described vibration signal is forwarded in single-chip microcomputer, single-chip microcomputer obtains according to the flexibility of described vibration signal and overarm the electrostatic potential producing electrostatic field, then the electrostatic potential of described generation electrostatic field is input in display, display display produces the electrostatic potential of electrostatic field, single-chip microcomputer judges whether the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value simultaneously, when the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value, then produce alerting signal, then described alerting signal is input in alarm, alarm is reported to the police according to described alerting signal.
The present invention has following beneficial effect:
Electrostatic field sensor of the present invention, electrostatic field sensor is comprised based on the electrostatic warning system of electrostatic field sensor and method, vibration transducer, single-chip microcomputer and terminal, in test process, first described electrostatic field sensor is tested, the normal resistance values of the first voltage dependent resistor (VDR) in electrostatic field sensor, the normal resistance values of the second voltage dependent resistor (VDR), the normal resistance values of the 3rd voltage dependent resistor (VDR) and the normal resistance values of the 4th voltage dependent resistor (VDR), and then the electrostatic potential producing electrostatic field is incorporated on the first battery lead plate and the second battery lead plate, make the first battery lead plate and the second battery lead plate produce interaction force, thus overarm is bent, calculate the first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), the resistance change of the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR), then according to described first voltage dependent resistor (VDR), second voltage dependent resistor (VDR), the resistance change of the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) obtains the flexibility of hanging oneself from a beam, then the interaction force between the first battery lead plate and the second battery lead plate is obtained according to the flexibility of overarm, and obtain according to the interaction force between the first battery lead plate and the second battery lead plate the electrostatic potential producing electrostatic field, and the electrostatic potential producing electrostatic field is when being more than or equal to pre-set threshold value, alarm equipment alarm, simultaneously, user can produce the electrostatic potential value of electrostatic field by display real time inspection, structure is simple, easy to operate, highly sensitive, cost is low, simultaneously in the process of Interaction Force obtaining the first battery lead plate and the second battery lead plate, vibration transducer detects the vibration signal of overarm, single-chip microcomputer obtains the interaction force between the first battery lead plate and the second battery lead plate according to the flexibility of described vibration signal and overarm, thus eliminate external environment vibrating noise to the interference of electrostatic field sensor, adaptability is extremely strong.
Further, the present invention also comprises silicon-based microelectromechanical chip, first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) all adopt the method for ion implantation or diffusion processing to be produced on silicon-based microelectromechanical chip, thus can realize mass production, and cost is low.
Further, the output terminal of electrostatic field sensor and the output terminal of vibration transducer are connected with the input end of single-chip microcomputer by filtering circuit, amplifying circuit and A/D change-over circuit all successively, vibration transducer is fixed in overarm, thus the effective precision improving the electrostatic potential measuring generation electrostatic field.
Accompanying drawing explanation
Fig. 1 is electrostatic field sensor 6 in the present invention;
Fig. 2 is the circuit diagram of the Wheatstone bridge of semiclosed loop structure in the present invention;
Fig. 3 is the electrostatic warning system based on electrostatic field sensor 6 in the present invention.
Wherein, 1 be stiff end, 2 be terminal, 3 be overarm, 4 to be the second battery lead plate, 5 be the first battery lead plates, 6 are electrostatic field sensor, 7 be vibration transducer, 8 be filtering circuit, 9 be amplifying circuit, 10 be A/D change-over circuit, 11 be single-chip microcomputer.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
With reference to figure 1, Fig. 2 and Fig. 3, electrostatic field sensor 6 of the present invention comprises stiff end 1, first terminals, second terminals, 3rd terminals, 4th terminals, 5th terminals, 6th terminals, overarm 3, first battery lead plate 5, second battery lead plate 4, first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, 3rd voltage dependent resistor (VDR) R3, 4th voltage dependent resistor (VDR) R4 and constant pressure source, one end of overarm 3 is fixed on stiff end 1, and the second battery lead plate 4 is fixed on the side of overarm 3 other end, the first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 is arranged at the side of overarm 3 all vertically, and stiff end 1, first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 is all positioned at the same side of overarm 3, gap is had between first battery lead plate 5 and the second battery lead plate 4, first battery lead plate 5 is fixed on directly over the second battery lead plate 4, first terminals are connected with one end of the first voltage dependent resistor (VDR) R1, second terminals are connected with the other end of the first voltage dependent resistor (VDR) R1 and one end of the second voltage dependent resistor (VDR) R2,6th terminals are connected with the other end of the second voltage dependent resistor (VDR) R2 and one end of the 4th voltage dependent resistor (VDR) R4,5th terminals are connected with the other end of the 4th voltage dependent resistor (VDR) R4 and one end of the 3rd voltage dependent resistor (VDR) R3,4th terminals are connected with the other end of the 3rd voltage dependent resistor (VDR) R3, and the 3rd terminals are connected with the second battery lead plate 4, during detection, the electrostatic potential producing electrostatic field is incorporated on the first battery lead plate 5, and the electrostatic potential introducing producing electrostatic field is incorporated on the second battery lead plate 4 through the 3rd terminals, first terminals are connected with the 4th terminals, the two ends of constant pressure source are connected with the second binding post and the 5th binding post respectively, and the 6th binding post and the first binding post or the 4th binding post are as the output terminal of described electrostatic field sensor.Described first voltage dependent resistor (VDR) R1, the second voltage dependent resistor (VDR) R2, the 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 constitute the Wheatstone bridge of a closed loop configuration.In addition, the present invention also comprises silicon-based microelectromechanical chip, first voltage dependent resistor (VDR) R1, the second voltage dependent resistor (VDR) R2, the 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 all adopt the method for ion implantation or diffusion processing to be produced on silicon-based microelectromechanical chip, and described silicon-based microelectromechanical chip has four arm girder constructions.
Accordingly, electrostatic warning system of the present invention comprises electrostatic field sensor 6, vibration transducer 7, single-chip microcomputer 11 and terminal 2, terminal 2 comprises alarm and display, the 6th terminals in electrostatic field sensor 6 and the output terminal of the 4th terminals and vibration transducer 7 are all connected with the input end of single-chip microcomputer 11, and the output terminal of single-chip microcomputer 11 is connected with the input end of the control end of warning horn and display.In addition, electrostatic warning system of the present invention also comprises filtering circuit 8, amplifying circuit 9 and A/D change-over circuit 10, the 6th terminals in electrostatic field sensor 6 and the output terminal of the 4th terminals and vibration transducer 7 are connected with the input end of single-chip microcomputer 11 by filtering circuit 8, amplifying circuit 9 and A/D change-over circuit 10 all successively, and vibration transducer 7 is fixed in overarm 3.
Electrostatic alarm method of the present invention comprises the following steps:
1) when first time uses or calibrates described electrostatic field sensor, first obtain the resistance value under described first voltage dependent resistor (VDR) R1 normal condition, resistance value under second voltage dependent resistor (VDR) R2 normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) R3 normal condition and the 4th voltage dependent resistor (VDR) R4 normal condition, then by the resistance value under the first voltage dependent resistor (VDR) R1 normal condition, resistance value under second voltage dependent resistor (VDR) R2 normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) R3 normal condition and the 4th voltage dependent resistor (VDR) R4 normal condition is input in single-chip microcomputer 11,
2) the first terminals and the 4th terminals are connected, again the electrostatic potential producing electrostatic field is linked on the first battery lead plate 5 and the second battery lead plate 4, first battery lead plate 5 and the second battery lead plate 4 are subject to the effect of power, overarm 3 is bent, and then make the first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, 3rd voltage dependent resistor (VDR) R3, resistance on 4th voltage dependent resistor (VDR) R4 changes, gather the voltage signal on the 6th terminals and the 4th terminals respectively, then the voltage signal on described 6th terminals and the voltage signal on the 4th terminals are input in single-chip microcomputer 11, single-chip microcomputer 11 is according to the voltage signal on described 6th terminals, voltage signal on 4th terminals, resistance value under first voltage dependent resistor (VDR) R1 normal condition, resistance value under second voltage dependent resistor (VDR) R2 normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) R3 normal condition and the 4th voltage dependent resistor (VDR) R4 normal condition obtains the first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, the size of the power that the 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 is subject to, then according to the first voltage dependent resistor (VDR) R1, second voltage dependent resistor (VDR) R2, the size of the power that the 3rd voltage dependent resistor (VDR) R3 and the 4th voltage dependent resistor (VDR) R4 is subject to must hang oneself from a beam 3 flexibility, vibration transducer 7 detects the vibration signal of overarm 3 simultaneously, then described vibration signal is forwarded in single-chip microcomputer 11, single-chip microcomputer 11 obtains according to the flexibility of described vibration signal and overarm 3 electrostatic potential producing electrostatic field, then the electrostatic potential of described generation electrostatic field is input in display, display display produces the electrostatic potential of electrostatic field, single-chip microcomputer 11 judges whether the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value simultaneously, when the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value, then produce alerting signal, then described alerting signal is input in alarm, alarm is reported to the police according to described alerting signal.
Claims (5)
1. an electrostatic field sensor, is characterized in that, comprises stiff end (1), first terminals, second terminals, 3rd terminals, 4th terminals, 5th terminals, 6th terminals, overarm (3), first battery lead plate (5), second battery lead plate (4), first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), 3rd voltage dependent resistor (VDR) (R3), 4th voltage dependent resistor (VDR) (R4) and constant pressure source, one end of overarm (3) is fixed on stiff end (1), second battery lead plate (4) is fixed on the side of overarm (3) other end, the first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), 3rd voltage dependent resistor (VDR) (R3) and the 4th voltage dependent resistor (VDR) (R4) are arranged at the side of overarm (3) all vertically, and stiff end (1), first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), 3rd voltage dependent resistor (VDR) (R3) and the 4th voltage dependent resistor (VDR) (R4) are all positioned at the same side of overarm (3), gap is had between first battery lead plate (5) and the second battery lead plate (4), first battery lead plate (5) is fixed on directly over the second battery lead plate (4), first terminals are connected with the one end of the first voltage dependent resistor (VDR) (R1), second terminals are connected with the other end of the first voltage dependent resistor (VDR) (R1) and one end of the second voltage dependent resistor (VDR) (R2), 6th terminals are connected with the other end of the second voltage dependent resistor (VDR) (R2) and one end of the 4th voltage dependent resistor (VDR) (R4), 5th terminals are connected with the other end of the 4th voltage dependent resistor (VDR) (R4) and one end of the 3rd voltage dependent resistor (VDR) (R3), 4th terminals are connected with the other end of the 3rd voltage dependent resistor (VDR) (R3), 3rd terminals are connected with the second battery lead plate (4),
During detection, the electrostatic potential producing electrostatic field is incorporated on the first battery lead plate (5), and the electrostatic potential introducing producing electrostatic field is incorporated on the second battery lead plate (4) through the 3rd terminals, first terminals are connected with the 4th terminals, the two ends of constant pressure source are connected with the second binding post and the 5th binding post respectively, and the 6th binding post and the first binding post or the 4th binding post are as the output terminal of described electrostatic field sensor.
2. electrostatic field sensor according to claim 1, it is characterized in that, also comprise silicon-based microelectromechanical chip, the first voltage dependent resistor (VDR) (R1), the second voltage dependent resistor (VDR) (R2), the 3rd voltage dependent resistor (VDR) (R3) and the 4th voltage dependent resistor (VDR) (R4) all adopt the method for ion implantation or diffusion processing to be produced on silicon-based microelectromechanical chip.
3. an electrostatic warning system, it is characterized in that, involving vibrations sensor (7), single-chip microcomputer (11), terminal (2) and electrostatic field sensor according to claim 1 (6), terminal (2) comprises alarm and display, the 6th terminals in electrostatic field sensor (6) and the output terminal of the 4th terminals and vibration transducer (7) are all connected with the input end of single-chip microcomputer (11), and the output terminal of single-chip microcomputer (11) is connected with the control end of warning horn and the input end of display.
4. electrostatic warning system according to claim 3, it is characterized in that, also comprise filtering circuit (8), amplifying circuit (9) and A/D change-over circuit (10), the 6th terminals in electrostatic field sensor (6) and the output terminal of the 4th terminals and vibration transducer (7) are connected with the input end of single-chip microcomputer (11) by filtering circuit (8), amplifying circuit (9) and A/D change-over circuit (10) all successively, and vibration transducer (7) is fixed in overarm (3).
5. an electrostatic alarm method, is characterized in that, based on electrostatic warning system according to claim 3, comprises the following steps:
1) when first time uses or calibrates described electrostatic field sensor, first obtain the resistance value under described first voltage dependent resistor (VDR) (R1) normal condition, resistance value under second voltage dependent resistor (VDR) (R2) normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) (R3) normal condition and the 4th voltage dependent resistor (VDR) (R4) normal condition, then by the resistance value under the first voltage dependent resistor (VDR) (R1) normal condition, resistance value under second voltage dependent resistor (VDR) (R2) normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) (R3) normal condition and the 4th voltage dependent resistor (VDR) (R4) normal condition is input in single-chip microcomputer (11),
2) the first terminals and the 4th terminals are connected, again the electrostatic potential producing electrostatic field is linked on the first battery lead plate (5) and the second battery lead plate (4), first battery lead plate (5) and the second battery lead plate (4) are subject to the effect of power, overarm (3) is bent, and then make the first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), 3rd voltage dependent resistor (VDR) (R3), resistance in 4th voltage dependent resistor (VDR) (R4) changes, gather the voltage signal on the 6th terminals and the 4th terminals respectively, then the voltage signal on described 6th terminals and the voltage signal on the 4th terminals are input in single-chip microcomputer (11), single-chip microcomputer (11) is according to the voltage signal on described 6th terminals, voltage signal on 4th terminals, resistance value under first voltage dependent resistor (VDR) (R1) normal condition, resistance value under second voltage dependent resistor (VDR) (R2) normal condition, resistance value under resistance value under 3rd voltage dependent resistor (VDR) (R3) normal condition and the 4th voltage dependent resistor (VDR) (R4) normal condition obtains the first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), the size of the power that the 3rd voltage dependent resistor (VDR) (R3) and the 4th voltage dependent resistor (VDR) (R4) are subject to, then according to the first voltage dependent resistor (VDR) (R1), second voltage dependent resistor (VDR) (R2), the size of the power that the 3rd voltage dependent resistor (VDR) (R3) and the 4th voltage dependent resistor (VDR) (R4) are subject to must be hung oneself from a beam the flexibility of (3), vibration transducer (7) detects the vibration signal of overarm (3) simultaneously, then described vibration signal is forwarded in single-chip microcomputer (11), single-chip microcomputer (11) obtains according to the flexibility of described vibration signal and overarm (3) electrostatic potential producing electrostatic field, then the electrostatic potential of described generation electrostatic field is input in display, display display produces the electrostatic potential of electrostatic field, single-chip microcomputer (11) judges whether the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value simultaneously, when the electrostatic potential producing electrostatic field is more than or equal to pre-set threshold value, then produce alerting signal, then described alerting signal is input in alarm, alarm is reported to the police according to described alerting signal.
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| CN106595722A (en) * | 2016-12-22 | 2017-04-26 | 厦门大学 | Low-frequency negative-stiffness capacitive sensor |
| CN106680602A (en) * | 2017-01-04 | 2017-05-17 | 成都冠禹科技有限公司 | Hall-sensor-based electrostatic field tester |
| CN106680602B (en) * | 2017-01-04 | 2019-05-31 | 威海惠高生物科技有限公司 | A kind of electrostatic field tester based on Hall sensor |
| CN108732416A (en) * | 2018-06-04 | 2018-11-02 | 西安交通大学 | A kind of MEMS micromirror high-pressure electrostatic sensor of front-end digital |
| CN108732416B (en) * | 2018-06-04 | 2020-06-19 | 西安交通大学 | MEMS micro-mirror high-voltage electrostatic sensor with digital front end |
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