CN104569626B - Electrostatic field sensor, electrostatic warning system and method based on electrostatic field sensor - Google Patents
Electrostatic field sensor, electrostatic warning system and method based on electrostatic field sensor Download PDFInfo
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- CN104569626B CN104569626B CN201510017468.6A CN201510017468A CN104569626B CN 104569626 B CN104569626 B CN 104569626B CN 201510017468 A CN201510017468 A CN 201510017468A CN 104569626 B CN104569626 B CN 104569626B
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Abstract
The invention discloses a kind of electrostatic field sensor, electrostatic warning system and method based on electrostatic field sensor, including fixing end, the first terminals, the second terminals, the 3rd terminals, the 4th terminals, the 5th terminals, the 6th terminals, overarm, first electrode plate, second electrode plate, the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance, the 4th piezo-resistance, constant pressure source, vibrating sensor, single-chip microcomputer and terminal, terminal includes alarm and display.The present invention can effectively measure the electrostatic potential value for producing electrostatic field, and be alarmed when more than threshold value, and simple structure, and sensitivity is high, easy to operate, strong adaptability.
Description
Technical field
The invention belongs to electrostatic charge detection technology field, it is related to a kind of electrostatic field sensor, based on electrostatic field sensor
Electrostatic warning system and method.
Background technology
Electric field is produced by electric charge, produces the electric charge of electrostatic field to be in static state, it is difficult to by general metering system institute
Perceive, meanwhile, in many cases the presence of electrostatic field again in actual production life for Field Force, equipment bring it is great
Potential safety hazard, therefore electrostatic field detection technology has a wide range of applications demand in industrial circle.
Eliminate that electrostatic field harm is main to be carried out in terms of " anti-" and " putting " two in the electrical engineering at present, i.e., in inoperative
By equipment reliable ground during state, the accumulation of electrostatic charge is prevented；It is grounded first after end-of-job or when needing contact, bleeding off can
Can there is electric charge thereon." anti-" or " putting " all cannot intuitively be understood whether there is on electrical equipment electric charge, have accumulated
How many electric charges, can only rely on the safety for sufficiently protecting precautionary measures to keep the scene intact staff.
Trek, Inc. of the U.S. in 2005 proposes a kind of application high frequent vibration cantilever beam, and to carry out noncontact quiet
Electrometric scheme, and applied for the patent of measurement of correlation scheme.2013, Japanese industries Technical Integration Studies institute was according to the above
Principle, employs the electrostatic transducer of MEMS (microelectromechanical systems) fabrication techniques in Japan " Nano Micro
Shown in Business " exhibitions.
However, this oscillatory type sensing mode, because the factors such as temperature, humidity, mechanical encapsulation can interfere with sensor
Resonant frequency, so as to its operation stability cannot be guaranteed under complex working condition.And Vibratory transducer complex structure, it is right
Operating environment requirements are high, and these all limit its extensive assembling, it is impossible to meet requirement of engineering.
The content of the invention
A kind of shortcoming it is an object of the invention to overcome above-mentioned prior art, there is provided electrostatic field sensor, based on quiet
The electrostatic warning system and method for electric-field sensor, sensor, system and method can effectively be measured and produce electrostatic field
Electrostatic potential value, and simple structure, sensitivity are high, easy to operate, strong adaptability.
To reach above-mentioned purpose, electrostatic field sensor of the present invention includes fixing end, the first terminals, the second wiring
End, the 3rd terminals, the 4th terminals, the 5th terminals, the 6th terminals, overarm, first electrode plate, second electrode plate,
One piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance, the 4th piezo-resistance and constant pressure source, one end of overarm is fixed on
In fixing end, second electrode plate is fixed on the side of the overarm other end, the first piezo-resistance, the second piezo-resistance, the 3rd pressure-sensitive
Resistance and the 4th piezo-resistance are axially disposed at the side of overarm, and fixing end, the first piezo-resistance, the second pressure-sensitive electricity
Resistance, the 3rd piezo-resistance and the 4th piezo-resistance are respectively positioned on the same side of overarm, have between first electrode plate and second electrode plate
Gap, first electrode plate is fixed on the surface of second electrode plate, and the first terminals are connected with one end of the first piezo-resistance,
Second terminals are connected with the other end of the first piezo-resistance and one end of the second piezo-resistance, and the 6th terminals and second are pressed
One end of the other end of quick resistance and the 4th piezo-resistance is connected, the other end and of the 5th terminals and the 4th piezo-resistance
One end of three piezo-resistances is connected, and the 4th terminals are connected with the other end of the 3rd piezo-resistance, the 3rd terminals and
Two battery lead plates are connected；
During detection, the electrostatic potential of electrostatic field will be produced to be incorporated on first electrode plate, and the electrostatic of electrostatic field will be produced
Current potential is introduced and is incorporated on second electrode plate through the 3rd terminals, and the first terminals are connected with the 4th terminals, constant pressure source
Two ends are connected with the second binding post and the 5th binding post respectively, the 6th binding post and the first binding post or the 4th binding post conduct
The output end of the electrostatic field sensor.
Also include silicon-based microelectromechanical chip, the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th are pressure-sensitive
Resistance is produced on silicon-based microelectromechanical chip using the method for ion implanting or diffusion processing.
Electrostatic warning system of the present invention includes electrostatic field sensor, vibrating sensor, single-chip microcomputer and terminal, eventually
End includes alarm and display, the 6th terminals and the 4th terminals and vibrating sensor in electrostatic field sensor
Output end is connected with the input of single-chip microcomputer, the input of the output end of single-chip microcomputer and the control end of siren and display
It is connected.
Also include filter circuit, amplifying circuit and A/D change-over circuits, the 6th terminals and the 4th in electrostatic field sensor
The output end of terminals and vibrating sensor passes sequentially through filter circuit, amplifying circuit and A/D change-over circuits and single-chip microcomputer
Input be connected, vibrating sensor be fixed on overarm on.
Electrostatic alarm method of the present invention is comprised the following steps：
1) when first time using or calibrating the electrostatic field sensor, the first piezo-resistance normal condition is first obtained
Under resistance value, the resistance value under the second piezo-resistance normal condition, the resistance value under the 3rd piezo-resistance normal condition and
Resistance value under 4th piezo-resistance normal condition, then by the resistance value under the first piezo-resistance normal condition, second pressure-sensitive
Resistance value and the 4th piezo-resistance normal condition under resistance value, the 3rd piezo-resistance normal condition under resistance normal condition
Under resistance value be input in single-chip microcomputer；
2) the first terminals and the 4th terminals are connected, then the electrostatic potential of electrostatic field will be produced to be linked into first
On battery lead plate and second electrode plate, first electrode plate and second electrode plate are acted on by power, bend overarm, and then make first
Resistance in piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance, the 4th piezo-resistance is changed, and the 6th is gathered respectively
Voltage signal on terminals and the 4th terminals, then by the voltage signal and the 4th terminals on the 6th terminals
Voltage signal be input in single-chip microcomputer, single-chip microcomputer is according to the voltage signal on the 6th terminals, on the 4th terminals
The resistance value under resistance value, the second piezo-resistance normal condition, the 3rd pressure under voltage signal, the first piezo-resistance normal condition
The resistance value under resistance value and the 4th piezo-resistance normal condition under quick resistance normal condition obtains the first piezo-resistance, the second pressure
The size of the power that quick resistance, the 3rd piezo-resistance and the 4th piezo-resistance are subject to, then according to the first piezo-resistance, second pressure-sensitive
The flexibility that the size of the power that resistance, the 3rd piezo-resistance and the 4th piezo-resistance are subject to must hang oneself from a beam；Vibrating sensor inspection simultaneously
The vibration signal of overarm is surveyed, then the vibration signal is forwarded in single-chip microcomputer, single-chip microcomputer is according to the vibration signal and hangs
Deflection of beam degree obtains producing the electrostatic potential of electrostatic field, and the electrostatic potential of the generation electrostatic field then is input into display
In, display display produces the electrostatic potential of electrostatic field, while single-chip microcomputer judges to produce whether the electrostatic potential of electrostatic field is more than
Or equal to predetermined threshold value, when the electrostatic potential for producing electrostatic field is more than or equal to predetermined threshold value, then alarm signal is produced, then
The alarm signal is input in alarm, alarm is alarmed according to the alarm signal.
The invention has the advantages that：
Electrostatic field sensor of the present invention, the electrostatic warning system based on electrostatic field sensor and method include electrostatic
Field sensor, vibrating sensor, single-chip microcomputer and terminal, in test process, first test the electrostatic field sensor, quiet
Normal resistance values of the first piezo-resistance in electric-field sensor, the normal resistance values of the second piezo-resistance, the 3rd piezo-resistance
The normal resistance values of normal resistance values and the 4th piezo-resistance, then will produce the electrostatic potential of electrostatic field to be incorporated into first again
On battery lead plate and second electrode plate, make to produce interaction force on first electrode plate and second electrode plate, so that overarm bending,
The resistance change of the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance is calculated, then basis
The resistance change of first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance is hung oneself from a beam
Flexibility, the interaction force that then flexibility according to overarm obtains between first electrode plate and second electrode plate, and root
Obtain producing the electrostatic potential of electrostatic field according to the interaction force between first electrode plate and second electrode plate, and produce electrostatic field
Electrostatic potential be more than or equal to predetermined threshold value when, alarm equipment alarm, meanwhile, user can be produced by display real time inspection
The electrostatic potential value of electrostatic field, simple structure is easy to operate, and sensitivity is high, low cost, while obtaining first electrode plate and
During the Interaction Force of two battery lead plates, the vibration signal of vibrating sensor detection overarm, single-chip microcomputer shakes according to
Dynamic signal and the flexibility of overarm obtain the interaction force between first electrode plate and second electrode plate, so as to eliminate extraneous ring
Interference of the border vibrating noise to electrostatic field sensor, adaptability is extremely strong.
Further, it is the first piezo-resistance, the second piezo-resistance, the 3rd pressure-sensitive present invention additionally comprises silicon-based microelectromechanical chip
Resistance and the 4th piezo-resistance are produced on silicon-based microelectromechanical chip using the method for ion implanting or diffusion processing, so that
It is capable of achieving mass production, low cost.
Further, the output end of the output end of electrostatic field sensor and vibrating sensor passes sequentially through filter circuit, puts
Big circuit and A/D change-over circuits are connected with the input of single-chip microcomputer, and vibrating sensor is fixed in overarm, so as to effectively carry
High measurement produces the precision of the electrostatic potential of electrostatic field.
Brief description of the drawings
Fig. 1 is electrostatic field sensor 6 in the present invention；
Fig. 2 is the circuit diagram of the Wheatstone bridge of semi-closure ring structure in the present invention；
Fig. 3 is the electrostatic warning system based on electrostatic field sensor 6 in the present invention.
Wherein, 1 be fixing end, 2 be terminal, 3 for overarm, 4 be second electrode plate, 5 be first electrode plate, 6 be electrostatic field
Sensor, 7 be vibrating sensor, 8 be filter circuit, 9 be amplifying circuit, 10 be A/D change-over circuits, 11 be single-chip microcomputer.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings：
With reference to Fig. 1, Fig. 2 and Fig. 3, electrostatic field sensor of the present invention 6 includes fixing end 1, the first terminals, second
Terminals, the 3rd terminals, the 4th terminals, the 5th terminals, the 6th terminals, overarm 3, first electrode plate 5, second electrode
Plate 4, the first piezo-resistance R1, the second piezo-resistance R2, the 3rd piezo-resistance R3, the 4th piezo-resistance R4 and constant pressure source, hang
One end of beam 3 is fixed in fixing end 1, and second electrode plate 4 is fixed on the side of 3 other ends of overarm, the first piezo-resistance R1, the
Two piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4 are axially disposed at the side of overarm 3, and fixing end
1st, the first piezo-resistance R1, the second piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4 are respectively positioned on the same of overarm 3
, there is gap side between first electrode plate 5 and second electrode plate 4, first electrode plate 5 is fixed on the surface of second electrode plate 4,
First terminals are connected with one end of the first piezo-resistance R1, the other end and of the second terminals and the first piezo-resistance R1
One end of two piezo-resistance R2 is connected, the other end and the 4th piezo-resistance R4 of the 6th terminals and the second piezo-resistance R2
One end is connected, and the 5th terminals are connected with the other end of the 4th piezo-resistance R4 and one end of the 3rd piezo-resistance R3, the
Four terminals are connected with the other end of the 3rd piezo-resistance R3, and the 3rd terminals are connected with second electrode plate 4；During detection,
The electrostatic potential of electrostatic field will be produced to be incorporated on first electrode plate 5, and the electrostatic potential of electrostatic field will be produced to introduce through the 3rd
Terminals are incorporated on second electrode plate 4, and the first terminals are connected with the 4th terminals, and the two ends of constant pressure source are respectively with second
Binding post and the 5th binding post are connected, and the 6th binding post and the first binding post or the 4th binding post are sensed as the electrostatic field
The output end of device.The first piezo-resistance R1, the second piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4 groups
Into a Wheatstone bridge for closed loop configuration.In addition, present invention additionally comprises silicon-based microelectromechanical chip, the first piezo-resistance R1,
Second piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4 are using ion implanting or the method for diffusion processing
It is produced on silicon-based microelectromechanical chip, the silicon-based microelectromechanical chip has four arm girder constructions.
Accordingly, electrostatic warning system of the present invention includes electrostatic field sensor 6, vibrating sensor 7, single-chip microcomputer 11
And terminal 2, terminal 2 includes alarm and display, the 6th terminals and the 4th terminals in electrostatic field sensor 6, with
And input of the output end of vibrating sensor 7 with single-chip microcomputer 11 is connected, the output end of single-chip microcomputer 11 and the control of siren
The input of end processed and display is connected.In addition, electrostatic warning system of the present invention also includes filter circuit 8, amplifies
Circuit 9 and A/D change-over circuits 10, the 6th terminals and the 4th terminals and vibrating sensor 7 in electrostatic field sensor 6
Output end pass sequentially through filter circuit 8, amplifying circuit 9 and A/D change-over circuits 10 and be connected with the input of single-chip microcomputer 11,
Vibrating sensor 7 is fixed in overarm 3.
Electrostatic alarm method of the present invention is comprised the following steps：
1) when first time using or calibrating the electrostatic field sensor, the normal shapes of the first piezo-resistance R1 are first obtained
Resistance value, the resistance under the 3rd piezo-resistance R3 normal conditions under resistance value, the second piezo-resistance R2 normal conditions under state
Resistance value under value and the 4th piezo-resistance R4 normal conditions, then by the resistance under the first piezo-resistance R1 normal conditions
Resistance value, the resistance value and the 4th under the 3rd piezo-resistance R3 normal conditions under value, the second piezo-resistance R2 normal conditions
Resistance value under piezo-resistance R4 normal conditions is input in single-chip microcomputer 11；
2) the first terminals and the 4th terminals are connected, then the electrostatic potential of electrostatic field will be produced to be linked into the first electricity
On pole plate 5 and second electrode plate 4, first electrode plate 5 and second electrode plate 4 are acted on by power, bend overarm 3, and then make
Resistance on first piezo-resistance R1, the second piezo-resistance R2, the 3rd piezo-resistance R3, the 4th piezo-resistance R4 changes,
Voltage signal on the 6th terminals of collection and the 4th terminals respectively, then by the voltage signal on the 6th terminals and
Voltage signal on 4th terminals is input in single-chip microcomputer 11, and single-chip microcomputer 11 is believed according to the voltage on the 6th terminals
Number, the voltage signal on the 4th terminals, the resistance value under the first piezo-resistance R1 normal conditions, the second piezo-resistance R2 it is normal
The resistance value under resistance value, the 3rd piezo-resistance R3 normal conditions under state and the electricity under the 4th piezo-resistance R4 normal conditions
Resistance obtains the first piezo-resistance R1, power that the second piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4 are subject to
Size, is then subject to according to the first piezo-resistance R1, the second piezo-resistance R2, the 3rd piezo-resistance R3 and the 4th piezo-resistance R4
Power size must hang oneself from a beam 3 flexibility；The vibration signal of the overarm of the detection of vibrating sensor 7 simultaneously 3, then believes the vibration
Number it is forwarded in single-chip microcomputer 11, single-chip microcomputer 11 obtains producing the quiet of electrostatic field according to the flexibility of the vibration signal and overarm 3
, then be input to the electrostatic potential of the generation electrostatic field in display by electric potential, and display display produces the quiet of electrostatic field
Electric potential, while whether single-chip microcomputer 11 judges to produce the electrostatic potential of electrostatic field more than or equal to predetermined threshold value, when generation electrostatic
When the electrostatic potential of field is more than or equal to predetermined threshold value, then alarm signal is produced, the alarm signal is then input to alarm
In device, alarm is alarmed according to the alarm signal.
Claims (5)
1. a kind of electrostatic field sensor, it is characterised in that connect including fixing end (1), the first terminals, the second terminals, the 3rd
Line end, the 4th terminals, the 5th terminals, the 6th terminals, overarm (3), first electrode plate (5), second electrode plate (4), the
One piezo-resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance (R3), the 4th piezo-resistance (R4) and constant pressure source,
One end of overarm (3) is fixed in fixing end (1), and second electrode plate (4) is fixed on the side of overarm (3) other end, the first pressure
Quick resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance (R3) and the 4th piezo-resistance (R4) are axially disposed at
The side of overarm (3), and fixing end (1), the first piezo-resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance (R3)
And the 4th piezo-resistance (R4) be respectively positioned on the same sides of overarm (3), between having between first electrode plate (5) and second electrode plate (4)
Gap, first electrode plate (5) is fixed on the surface of second electrode plate (4), and the one of the first terminals and the first piezo-resistance (R1)
End is connected, and the second terminals are connected with the other end of the first piezo-resistance (R1) and one end of the second piezo-resistance (R2),
6th terminals are connected with the other end of the second piezo-resistance (R2) and one end of the 4th piezo-resistance (R4), the 5th terminals
It is connected with the other end of the 4th piezo-resistance (R4) and one end of the 3rd piezo-resistance (R3), the 4th terminals are pressure-sensitive with the 3rd
The other end of resistance (R3) is connected, and the 3rd terminals are connected with second electrode plate (4)；
During detection, the electrostatic potential of electrostatic field will be produced to be incorporated on first electrode plate (5), and the electrostatic electricity of electrostatic field will be produced
Position is incorporated on second electrode plate (4) through the 3rd terminals, and the first terminals are connected with the 4th terminals, the two ends of constant pressure source
It is connected with the second binding post and the 5th binding post respectively, the 6th binding post is with the first binding post or the 4th binding post as described
The output end of electrostatic field sensor.
2. electrostatic field sensor according to claim 1, it is characterised in that also including silicon-based microelectromechanical chip, the first pressure
Quick resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance (R3) and the 4th piezo-resistance (R4) use ion implanting
Or the method for diffusion processing is produced on silicon-based microelectromechanical chip.
3. a kind of electrostatic warning system, it is characterised in that including vibrating sensor (7), single-chip microcomputer (11), terminal (2), Yi Jiquan
Profit requires the electrostatic field sensor (6) described in 1, and terminal (2) includes alarm and display, in electrostatic field sensor (6)
Input of the output end of six terminals and the 4th terminals and vibrating sensor (7) with single-chip microcomputer (11) is connected, single
The output end of piece machine (11) is connected with the control end of siren and the input of display.
4. electrostatic warning system according to claim 3, it is characterised in that also including filter circuit (8), amplifying circuit
(9) and A/D change-over circuits (10), the 6th terminals and the 4th terminals and vibrating sensor in electrostatic field sensor (6)
(7) it is defeated with single-chip microcomputer (11) that output end passes sequentially through filter circuit (8), amplifying circuit (9) and A/D change-over circuits (10)
Enter end to be connected, vibrating sensor (7) is fixed in overarm (3).
5. a kind of electrostatic alarm method, it is characterised in that based on the electrostatic warning system described in claim 3, including following step
Suddenly：
1) when first time using or calibrating the electrostatic field sensor, the first piezo-resistance (R1) normal condition is first obtained
Under resistance value, the resistance value under the second piezo-resistance (R2) normal condition, the electricity under the 3rd piezo-resistance (R3) normal condition
Resistance value under resistance and the 4th piezo-resistance (R4) normal condition, then by under the first piezo-resistance (R1) normal condition
The resistance value under resistance value, the 3rd piezo-resistance (R3) normal condition under resistance value, the second piezo-resistance (R2) normal condition
And the 4th resistance value under piezo-resistance (R4) normal condition is input in single-chip microcomputer (11)；
2) the first terminals and the 4th terminals are connected, then the electrostatic potential of electrostatic field will be produced to be linked into first electrode plate
(5) and on second electrode plate (4), first electrode plate (5) and second electrode plate (4) are acted on by power, bend overarm (3),
And then make in the first piezo-resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance (R3), the 4th piezo-resistance (R4)
Resistance changes, and the voltage signal on the 6th terminals and the 4th terminals is gathered respectively, then by the 6th terminals
On voltage signal and the voltage signal on the 4th terminals be input in single-chip microcomputer (11), single-chip microcomputer (11) is according to the described 6th
The voltage signal on voltage signal, the 4th terminals on terminals, the resistance value under the first piezo-resistance (R1) normal condition,
Resistance value and the 4th pressure under resistance value, the 3rd piezo-resistance (R3) normal condition under second piezo-resistance (R2) normal condition
Resistance value under quick resistance (R4) normal condition obtains the first piezo-resistance (R1), the second piezo-resistance (R2), the 3rd piezo-resistance
(R3) and the size of power that is subject to of the 4th piezo-resistance (R4), then according to the first piezo-resistance (R1), the second piezo-resistance
(R2), the size of the power that the 3rd piezo-resistance (R3) and the 4th piezo-resistance (R4) are subject to must hang oneself from a beam the flexibility of (3)；Shake simultaneously
, then be forwarded to the vibration signal in single-chip microcomputer (11), single-chip microcomputer by the vibration signal of dynamic sensor (7) detection overarm (3)
(11) flexibility according to the vibration signal and overarm (3) obtains producing the electrostatic potential of electrostatic field, then by the generation
The electrostatic potential of electrostatic field is input in display, and display display produces the electrostatic potential of electrostatic field, while single-chip microcomputer (11)
Whether the electrostatic potential for producing electrostatic field is judged more than or equal to predetermined threshold value, when the electrostatic potential for producing electrostatic field is more than or waits
When predetermined threshold value, then alarm signal is produced, then the alarm signal is input in alarm, alarm is according to the report
Alert signal is alarmed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510017468.6A CN104569626B (en) | 2015-01-13 | 2015-01-13 | Electrostatic field sensor, electrostatic warning system and method based on electrostatic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510017468.6A CN104569626B (en) | 2015-01-13 | 2015-01-13 | Electrostatic field sensor, electrostatic warning system and method based on electrostatic field sensor |
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| CN104569626A CN104569626A (en) | 2015-04-29 |
| CN104569626B true CN104569626B (en) | 2017-06-06 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106595722B (en) * | 2016-12-22 | 2019-01-22 | 厦门大学 | low frequency negative stiffness capacitance sensor |
| CN106680602B (en) * | 2017-01-04 | 2019-05-31 | 威海惠高生物科技有限公司 | A kind of electrostatic field tester based on Hall sensor |
| CN108732416B (en) * | 2018-06-04 | 2020-06-19 | 西安交通大学 | MEMS micro-mirror high-voltage electrostatic sensor with digital front end |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2586547B2 (en) * | 1988-02-18 | 1997-03-05 | 日本電気株式会社 | Potential sensor |
| US6573725B2 (en) * | 2001-08-24 | 2003-06-03 | Trek, Inc. | Sensor for non-contacting electrostatic detector |
| US6600323B2 (en) * | 2001-08-24 | 2003-07-29 | Trek, Inc. | Sensor for non-contacting electrostatic detector |
| ES2338975B1 (en) * | 2008-11-12 | 2011-03-11 | Instituto De Tecnologia Electrica, Ite | ELECTRIC FIELD SENSOR. |
| CN202230112U (en) * | 2011-09-28 | 2012-05-23 | 上海安平静电科技有限公司 | Portable static detection device |
| CN103675481B (en) * | 2013-10-18 | 2016-06-15 | 中国科学院电子学研究所 | Piezoelectric cantilever beam type mini electric field sensor |
| CN103675480B (en) * | 2013-10-18 | 2016-08-17 | 中国科学院电子学研究所 | Both-end clamped piezoelectric beam formula micro field sensor |
| CN204008809U (en) * | 2014-07-17 | 2014-12-10 | 中国石油化工股份有限公司 | Electrostatic potential testing sensor |
| CN104237652B (en) * | 2014-09-03 | 2016-08-24 | 西安交通大学 | A kind of beam diaphragm structure high-voltage electrostatic field based on pressure-sensitive principle sensor chip |
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