CN104515640A - Capacitive MEMS (micro-electromechanical system) pressure sensor - Google Patents
Capacitive MEMS (micro-electromechanical system) pressure sensor Download PDFInfo
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- CN104515640A CN104515640A CN201310463120.0A CN201310463120A CN104515640A CN 104515640 A CN104515640 A CN 104515640A CN 201310463120 A CN201310463120 A CN 201310463120A CN 104515640 A CN104515640 A CN 104515640A
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- detection film
- lower electrode
- electric pole
- pole plate
- pressure transducer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a capacitive MEMS (micro-electromechanical system) pressure sensor. Detection thin film is separated from upper and lower electrodes of a capacitor and not serves as one of the electrodes, hence that, during running of the device, external working medium contacts and presses the detection thin film to drive a down plate of a detection electrode to move, distance of plates of the electrodes is changed, in this way, the capacitor changes and then is led out by a lead to an external capacitance detecting circuit, change of the distance of the plates of the electrodes is acquired according to capacitance detection variation, and accordingly a pressure value of the working medium is calculated. The electrodes are free of deformation caused by stress and substantially constant on effective areas, capacitance is determined by distance, besides, the area of the detection thin film and that of the detection capacitor can be separated for regulation, thus during device designing, the size is flexible to regulate with device parameter fixed, and cost is lowered. According to the arrangement, the structure problem of the traditional pressure sensor that to improve sensitivity, the thin film size is regulated by introducing nonlinearity and changing dynamic response range size is solved.
Description
Technical field
The present invention relates to a kind of pressure transducer, particularly a kind of capacitive MEMS pressure transducer.
Background technology
Capacitance pressure transducer, has the significant advantage such as Low Drift Temperature, high sensitivity, low noise and larger dynamic range and is widely used.Touch Mode Capacitive Pressure Sensor is made up of silicon diaphragm, substrate, underlayer electrode and insulation course.A capacitance structure is formed between silicon diaphragm and underlayer electrode; Silicon diaphragm distortion after the effect of being stressed, now electrode separation d there occurs corresponding change.MEMS capacitive pressure transducer includes two electric capacity: one is the measurement electric capacity C for measuring
x, another is the reference capacitance C for temperature compensation
odeform when diaphragm (top electrode) is under pressure p effect, along with the increase diaphragm of pressure and the distance of substrate reduce gradually, before pressure reaches contact point pressure (pressure when namely its center touches insulation course), the capacitance measuring capacitor is determined by C=ε A/d, in formula, ε, A, d are interelectrode specific inductive capacity, useful area and polar plate spacing respectively.The change of the polar plate spacing d that pressure load causes will inevitably make electric capacity C that corresponding change occurs.When pressure p continues to increase, after reaching contact point, measure capacitance and then determined by non-contact capacitive and hand capacity.The integral expression of the non-contact capacitive amount under polar coordinate system is
, ε in formula
0for permittivity of vacuum; ε
afor the relative dielectric constant of air; ε
ifor the relative dielectric constant of insulating layer material; T is the thickness of insulation course; G is primary clearance; W (r) for radius be the distortion on the circle of r.Using the center of circular film as true origin during calculating.In certain scope, contact area increases linearly along with pressure, thus makes capacitance produce linear change.By selecting the device parameters of the spacing of the size of suitable diaphragm, thickness and electrode etc., the sensitivity and linear measurement range of sensor can be improved.As can be seen here, traditional capacitive MEMS pressure transducer is for improving sensitivity, be realize by increasing the size detecting film, the thickness reducing to detect film and reducing spacing between electrode pad, but introduce the deterioration of the indexs such as non-linear and device dynamic responding range thus; Owing to increasing film dimensions, the size of device is increased further, and cost increase.
Summary of the invention
In order to overcome the problems referred to above, the invention discloses a kind of capacitive MEMS pressure transducer evading conventional pressure sensor the problems referred to above from device architecture.
The concrete technical scheme that the present invention adopts is that a kind of capacitive MEMS pressure transducer, comprising:
Substrate;
Detect film, be fixedly layed on the upper surface of described substrate; Described substrate is provided with and detection film is contacted with extraneous actuating medium and bears through hole or the groove of its pressure;
There is the electric pole plate of lead-in wire, on its upper surface being fixedly connected on described substrate or on described detection film, and above described detection film and and form gap between described detection film;
Have the lower electrode plate of lead-in wire, it is fixedly installed on described detection film, and in gap between described detection film and described electric pole plate, described lower electrode plate and described electric pole plate form electric capacity.
Preferably, the middle part of described lower electrode plate is connected with described detection film point or is connected by a projection or cylinder.
Preferably, described detection film is conductor, and be provided with lead-in wire, chamber is formed between described electric pole plate and described detection film, described electric pole plate is provided with the release aperture that at least one runs through, described lower electrode plate is arranged in described chamber and is connected by insulating material with described detection film, is connected on described detection film on the upper surface that described electric pole plate is fixedly connected on described substrate or by insulating material.
Preferably, described lower electrode plate lower surface geometric center place extends to form electrode plate connection parts downwards, and described lower electrode plate connecting portion is fixedly connected with by insulation course with the geometric center place of the operate portions upper surface of described detection film.
Preferably, described substrate is followed successively by silicon nitride layer, silicon dioxide layer and silicon substrate from top to bottom, and described detection film is arranged on described silicon nitride layer.
Preferably, described detection film is polysilicon membrane.
Preferably, described electric pole plate and lower electrode plate are polysilicon and make.
Preferably, described insulation course is that silicon nitride is made.
Preferably, the longitudinal central axis section of described electric pole plate is n shape, is covered at by described lower electrode plate in its inner chamber, and its inner upper bottom surface is plane, and forms electric capacity with described lower electrode plate.
The invention has the beneficial effects as follows, due to film and electric capacity upper/lower electrode will be detected separately, instead of as one of them, during devices function, extraneous actuating medium and detection film contacts, compressing detects film, drives the action of detecting electrode bottom crown, changes spacing between upper/lower electrode pole plate, produce capacitance variations, and then lead to external capacitor testing circuit by lead-in wire, drawn the change of spacing between upper/lower electrode pole plate by the knots modification of detecting electric capacity, and then be converted into the pressure value of actuating medium.Due to upper/lower electrode no longer stress deformation, its useful area substantially constant, capacitance is determined by spacing, and the area simultaneously detecting film and Detection capacitance can separate regulation, can adjusting device size more flexibly under the device parameters of regulation when designing device, to reduce costs.
The present invention has also avoided from device architecture the problem adjusting the non-linear and responding range change that film dimensions is introduced in conventional pressure sensor for improving sensitivity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention 1.
Fig. 2 to Fig. 8 is the structural representation of the embodiment of the present invention 2, wherein, is (the 4th layer is substrate, does not draw separately, but illustrate in Fig. 2 to Fig. 4 its position) from top to bottom respectively:
Fig. 2 is the schematic diagram of ground floor structure of the present invention;
Fig. 3 is the schematic diagram of second layer structure of the present invention;
Fig. 4 is the schematic diagram of third layer structure of the present invention;
The vertical view of Fig. 5 after to be that the present invention three is stacked add and analyse and observe mark figure;
Fig. 6 is a-a cut-open view;
Fig. 7 is b-b cut-open view;
Fig. 8 is c-c cut-open view.
In figure, 1, substrate; 11, silicon substrate; 12, silicon dioxide layer; 13, silicon nitride layer; 14, through hole; 2, film is detected; 3, lower electrode plate; 31, lower electrode plate connecting portion; 4, electric pole plate; 41, release aperture; 5, silicon dioxide layer; 6 insulation courses; 8, gap.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.The first embodiment of the present invention shown in Fig. 1.
A kind of capacitive MEMS pressure transducer, is provided with from top to bottom successively:
Substrate 1, detect film 2 and there is lower electrode plate 3 and the electric pole plate 4 of lead-in wire.
Detecting film 2 is fixedly layed on the upper surface of substrate 1; Substrate 1 is provided with and detection film 2 is contacted with extraneous actuating medium and the through hole 14(bearing its pressure also can be arbitrary shape or groove);
The electric pole plate 4 with lead-in wire is fixedly connected on to detect and film 2 (also can be fixed on the upper surface of substrate 1, size or design production technology according to detecting film 2 need to determine), and above detection film 2 and and detect between film 2 and form gap 8, the operate portions of electric pole plate 4 is a flat board, it can be rectangle, polygon, circle waits arbitrary shape, its edge extends to form electric pole plate connecting portion downwards and is fixedly connected on and detects on film 2 (also can be fixed on the upper surface of substrate 1), play the effect in support works portion simultaneously, for be released in detect when film 2 bears pressure electric pole plate 4 between detection film 2 in gap by the air compressed, on electric pole plate connecting portion or through hole and the opening of at least one release aperture 41 or other shape are set in electric pole plate operate portions, the present embodiment adopts in electric pole plate operate portions, evenly arranges 7 square release aperture, as shown in Figure 5.
Have the lower electrode plate 3 of lead-in wire, it is fixedly installed on and detects on film 2, and is detecting in the gap 8 between film 2 and electric pole plate 4, and lower electrode plate 3 and electric pole plate 4 form electric capacity.
In order to when detecting film 2 compressive deformation, lower electrode plate 3 can keep horizontality to top offset, to improve the range of linearity that electric capacity changes with spacing change between upper/lower electrode plate, the middle part of lower electrode plate 3 and detection film 2 are connected (also can be connect or the projection of other shape connects) by a cylinder, and the present embodiment is the lower electrode plate connecting portion 31 extended to form downwards in the middle part of lower electrode plate lower surface.
The principle of work of the present embodiment is, operate outside medium applies pressure by through hole 14 to detection film 2 lower surface, causes its upwards depressed deformation, promotes lower electrode plate 3 and moves up, make the gap smaller between power-on and power-off pole plate, thus capacitance is therebetween changed, by detecting this capacitance change, converse force value, the present invention will detect film and be separated with battery lead plate, the first, battery lead plate is stress deformation no longer, and the range of linearity of detection improves greatly; The second, can adjust the size detecting film and power-on and power-off pole plate as required respectively, the design for pressure transducer brings more degree of freedom, is convenient to the balance between actualizing technology index and cost.
The second embodiment of the present invention shown in Fig. 2-Fig. 8.
On the basis of embodiment 1, described detection film 2 is conductor (the present embodiment selection polysilicon), and be provided with lead-in wire, chamber (i.e. gap described in embodiment 1) is formed between electric pole plate 4 and described detection film 2, electric pole plate 4 is provided with at least one release aperture 41(the present embodiment run through and evenly arranges 7), lower electrode plate 3 is arranged in chamber and is silicon nitride layer with detection film 2 by insulation course 6(the present embodiment) be connected, in order to optimisation technique index, lower electrode plate 3 lower surface geometric center place extends to form electrode plate connection parts 31(and embodiment 1 downwards and takes identical form), lower electrode plate connecting portion 31 is fixedly connected with by insulation course 6 with the geometric center place of the operate portions upper surface detecting film 2.Make lower electrode plate 3 and detect film 2 insulation isolation.
Electric pole plate 4 is fixedly connected on by insulating material (the present embodiment is silicon dioxide layer 5) and detects on film 2 (also can be fixedly connected on as required on the upper surface of described substrate 1), makes electric pole plate 4 and detects insulation isolation between film 2.
In actual applications, by applying constant bias voltage between electric pole plate 4 and detection film, a Faradic electricity magnetic well can be formed, effectively completely cut off the impact of external electromagnetic field on bottom electrode, realize EMI protection.
In above-described embodiment, optimize structure further, substrate 1 is followed successively by silicon nitride layer 13, silicon dioxide layer 12 and silicon substrate 11 from top to bottom, detects film and is arranged on described silicon nitride layer 13.Detection film is polysilicon membrane.Electric pole plate and lower electrode plate are polysilicon and make.Insulation course is that silicon nitride is made.The longitudinal central axis section of electric pole plate is n shape, is covered at by lower electrode plate in its inner chamber, and its inner upper bottom surface is plane, and forms electric capacity with lower electrode plate.
The invention has the beneficial effects as follows, due to film and electric capacity upper/lower electrode will be detected separately, instead of as one of them, during devices function, extraneous actuating medium and detection film contacts, compressing detects film, drives the action of detecting electrode bottom crown, changes spacing between upper/lower electrode pole plate, produce capacitance variations, and then lead to external capacitor testing circuit by lead-in wire, drawn the change of spacing between upper/lower electrode pole plate by the knots modification of detecting electric capacity, and then be converted into the pressure value of actuating medium.Due to upper/lower electrode no longer stress deformation, its useful area substantially constant, capacitance is determined by spacing, and the area simultaneously detecting film and Detection capacitance can separate regulation, can adjusting device size more flexibly under the device parameters of regulation when designing device, to reduce costs.
The present invention has also avoided from device architecture the problem adjusting the non-linear and responding range change that film dimensions is introduced in conventional pressure sensor for improving sensitivity.Simultaneously by applying constant bias voltage between electric pole plate 4 and detection film, a Faradic electricity magnetic well can be formed, effectively completely cut off the impact of external electromagnetic field on bottom electrode, realize EMI protection.
Claims (9)
1. capacitive MEMS pressure transducer, is characterized in that, comprising:
Substrate;
Detect film, be fixedly layed on the upper surface of described substrate; Described substrate is provided with and detection film is contacted with extraneous actuating medium and bears through hole or the groove of its pressure;
There is the electric pole plate of lead-in wire, on its upper surface being fixedly connected on described substrate or on described detection film, and above described detection film and and form gap between described detection film;
Have the lower electrode plate of lead-in wire, it is fixedly installed on described detection film, and in gap between described detection film and described electric pole plate, described lower electrode plate and described electric pole plate form electric capacity.
2. capacitive MEMS pressure transducer according to claim 1, is characterized in that, the middle part of described lower electrode plate is connected with described detection film point or is connected by a projection or cylinder.
3. capacitive MEMS pressure transducer according to claim 1 and 2, it is characterized in that, described detection film is conductor, and be provided with lead-in wire, chamber is formed between described electric pole plate and described detection film, described electric pole plate is provided with the release aperture that at least one runs through, described lower electrode plate is arranged in described chamber and is connected by insulating material with described detection film, is connected on described detection film on the upper surface that described electric pole plate is fixedly connected on described substrate or by insulating material.
4. capacitive MEMS pressure transducer according to claim 3, it is characterized in that, described lower electrode plate lower surface geometric center place extends to form a junction downwards, and described connecting portion is fixedly connected with by insulation course with the geometric center place of the operate portions upper surface of described detection film.
5. capacitive MEMS pressure transducer according to claim 3, is characterized in that, described substrate is followed successively by silicon nitride layer, silicon dioxide layer and silicon from top to bottom, and described detection film is arranged on described silicon nitride layer.
6. capacitive MEMS pressure transducer according to claim 3, is characterized in that, described detection film is polysilicon membrane.
7. capacitive MEMS pressure transducer according to claim 3, is characterized in that, described electric pole plate and lower electrode plate are polysilicon and make.
8. capacitive MEMS pressure transducer according to claim 4, is characterized in that, described insulation course is that silicon nitride is made.
9. capacitive MEMS pressure transducer according to claim 8, is characterized in that, the longitudinal central axis section of described electric pole plate is n shape, is covered at by described lower electrode plate in its inner chamber, and its inner upper bottom surface is plane, and forms electric capacity with described lower electrode plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310463120.0A CN104515640B (en) | 2013-10-08 | 2013-10-08 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
| PCT/CN2014/087935 WO2015051729A1 (en) | 2013-10-08 | 2014-09-30 | Capacitive type mems pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310463120.0A CN104515640B (en) | 2013-10-08 | 2013-10-08 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
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| CN104515640A true CN104515640A (en) | 2015-04-15 |
| CN104515640B CN104515640B (en) | 2017-02-22 |
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| WO (1) | WO2015051729A1 (en) |
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| CN106533415A (en) * | 2015-09-11 | 2017-03-22 | 株式会社鹭宫制作所 | Capacitance-detection type pressure switch and pressure sensor |
| CN107850505A (en) * | 2015-06-15 | 2018-03-27 | 芬兰国家技术研究中心股份公司 | MEMS capacitive pressure sensor and manufacture method |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
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| CN110482475A (en) * | 2019-07-12 | 2019-11-22 | 电子科技大学 | A kind of capacitance pressure transducer, based on MEMS |
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| CN113237585B (en) * | 2021-03-29 | 2022-08-23 | 湖南久钰电子有限公司 | Capacitive torque sensor and intelligent vehicle monitoring system |
| CN113237585A (en) * | 2021-03-29 | 2021-08-10 | 湖南久钰电子有限公司 | Capacitive torque sensor and intelligent vehicle monitoring system |
| CN114754904B (en) * | 2022-03-30 | 2023-09-29 | 青岛歌尔智能传感器有限公司 | MEMS capacitive sensor and preparation method thereof |
| CN114754904A (en) * | 2022-03-30 | 2022-07-15 | 青岛歌尔智能传感器有限公司 | MEMS capacitive sensor and preparation method thereof |
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| WO2015051729A1 (en) | 2015-04-16 |
| CN104515640B (en) | 2017-02-22 |
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