CN104515640B - Capacitive MEMS (micro-electromechanical system) pressure sensor - Google Patents
Capacitive MEMS (micro-electromechanical system) pressure sensor Download PDFInfo
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- CN104515640B CN104515640B CN201310463120.0A CN201310463120A CN104515640B CN 104515640 B CN104515640 B CN 104515640B CN 201310463120 A CN201310463120 A CN 201310463120A CN 104515640 B CN104515640 B CN 104515640B
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- thin film
- detection thin
- bottom electrode
- electrode plate
- electric pole
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a capacitive MEMS (micro-electromechanical system) pressure sensor. Detection thin film is separated from upper and lower electrodes of a capacitor and not serves as one of the electrodes, hence that, during running of the device, external working medium contacts and presses the detection thin film to drive a down plate of a detection electrode to move, distance of plates of the electrodes is changed, in this way, the capacitor changes and then is led out by a lead to an external capacitance detecting circuit, change of the distance of the plates of the electrodes is acquired according to capacitance detection variation, and accordingly a pressure value of the working medium is calculated. The electrodes are free of deformation caused by stress and substantially constant on effective areas, capacitance is determined by distance, besides, the area of the detection thin film and that of the detection capacitor can be separated for regulation, thus during device designing, the size is flexible to regulate with device parameter fixed, and cost is lowered. According to the arrangement, the structure problem of the traditional pressure sensor that to improve sensitivity, the thin film size is regulated by introducing nonlinearity and changing dynamic response range size is solved.
Description
Technical field
The present invention relates to a kind of pressure transducer, particularly to a kind of capacitive MEMS pressure transducer.
Background technology
It is significantly excellent that capacitance pressure transducer has Low Drift Temperature, high sensitivity, low noise and larger dynamic range etc.
Put and be widely used.Touch Mode Capacitive Pressure Sensor is made up of silicon diaphragm, substrate, underlayer electrode and insulating barrier.Silicon diaphragm
A capacitance structure is constituted and between underlayer electrode；Silicon diaphragm deformation after the effect of being stressed, now electrode spacing d there occurs accordingly
Change.MEMS capacitive pressure transducer includes two electric capacity：One be for measurement measurement electric capacity Cx, another is to use
Reference capacitance C in temperature-compensatingo, deform when diaphragm (Top electrode) is under pressure p effect, with the increase film of pressure
Piece is gradually reduced with the distance of substrate, pressure reach contact point pressure (pressure when i.e. its center touches insulating barrier) it
Before, the capacitance of measurement capacitor determines, in formula, ε, A, d are interelectrode dielectric constant, effective area respectively by C=ε A/d
And polar plate spacing.The change of the polar plate spacing d that pressure loading causes will necessarily make electric capacity C that corresponding change occurs.When pressure p continues
During continuous increase, after reaching contact point, measurement capacitance is then determined by non-contact capacitive and hand capacity.Under polar coordinate system
The integral expression of non-contact capacitive amount isε in formula0For permittivity of vacuum；εaFor air
Relative dielectric constant；εiRelative dielectric constant for insulating layer material；T is the thickness of insulating barrier；G is primary clearance；W (r) is
Radius is the deformation on the circle of r.Using the center of circular film as zero during calculating.Contact area in certain scope
Linearly increase with pressure, so that capacitance produces linear change.By selecting size, thickness and the electricity of suitable diaphragm
The device parameters of the spacing of pole etc., can improve the sensitivity and linear measurement range of sensor.As can be seen here, traditional condenser type
MEMS pressure sensor is to improve sensitivity, is by increasing the size of detection thin film, the thickness reducing detection thin film and contracting
Small electrode pole spacing between plates is realizing, but thus introduces the deterioration of the indexs such as non-linear and device dynamic response range；By
In increasing film dimensions so that the size of device increases further, and cost increases.
Content of the invention
In order to overcome the problems referred to above, the invention discloses one kind is evaded from device architecture, conventional pressure sensor is above-mentioned to ask
The capacitive MEMS pressure transducer of topic.
The present invention adopt concrete technical scheme be, a kind of capacitive MEMS pressure transducer, including：
Substrate；
Detection thin film, fixation is layed on the upper surface of described substrate；Described substrate is provided with makes detection thin film and the external world
Working media contacts and bears through hole or the groove of its pressure；
There is the electric pole plate of lead, its be fixedly connected on the upper surface of described substrate or described detection thin film on, and
Form gap above described detection thin film and and described detection thin film between；
There is the bottom electrode plate of lead, it is fixedly installed on described detection thin film, and is located at described detection thin film and institute
State in the gap between electric pole plate, described bottom electrode plate constitutes electric capacity, the middle part of described bottom electrode plate with described electric pole plate
It is connected with described detection film point or by a raised or cylinder connection.
Preferably, described detection thin film is conductor, and is provided with lead, shape between described electric pole plate and described detection thin film
Become chamber, described electric pole plate is provided with the release aperture that at least one runs through, described bottom electrode plate is located in described chamber simultaneously
It is connected by insulant with described detection thin film, described electric pole plate is fixedly connected on the upper surface of described substrate or passes through
Insulant is connected on described detection thin film.
Preferably, it is downwardly extending electrode plate connection parts at described bottom electrode plate lower surface geometric center, described
Bottom electrode plate connecting portion is fixedly connected by insulating barrier with the geometric center of the work department upper surface of described detection thin film.
Preferably, described substrate is followed successively by silicon nitride layer, silicon dioxide layer and silicon substrate, described detection thin film from top to bottom
It is arranged on described silicon nitride layer.
Preferably, described detection thin film is polysilicon membrane.
Preferably, described electric pole plate and bottom electrode plate are polysilicon and make.
Preferably, described insulating barrier is made up of silicon nitride.
Preferably, the longitudinal central axis section of described electric pole plate is n shape, and described bottom electrode plate is covered in its inner chamber,
Its internal upper bottom surface is plane, and constitutes electric capacity with described bottom electrode plate.
The invention has the beneficial effects as follows, due to thin film and electric capacity upper/lower electrode will be detected separately, not as wherein it
One, during device work, extraneous working media detects thin film with detection film contacts, compressing, drives detecting electrode bottom crown action,
Change upper/lower electrode pole spacing between plates, produce capacitance variations, and then external capacitor testing circuit is led to by lead, by detecting
The knots modification of electric capacity draws the change of upper/lower electrode pole spacing between plates, and then is converted into the pressure value of working media.Due to upper
Bottom electrode no longer stress deformation, its effective area substantially constant, capacitance is determined by spacing, simultaneously detection thin film and detection electric capacity
Area can separate regulation, when designing device under the device parameters of regulation can more flexible adjusting device size, with
Reduces cost.
The present invention also avoided from device architecture in conventional pressure sensor for improve sensitivity and adjust film dimensions
The problem that introduced non-linear and responding range changes.
Brief description
Fig. 1 is the structural representation of the embodiment of the present invention 1.
Fig. 2 to Fig. 8 is the structural representation of the embodiment of the present invention 2, wherein, be respectively from top to bottom (the 4th layer is substrate,
It is not separately shown, but illustrates its position in Fig. 2 to Fig. 4)：
Fig. 2 is the schematic diagram of the present invention first Rotating fields；
Fig. 3 is the schematic diagram of the present invention second Rotating fields；
Fig. 4 is the schematic diagram of third layer structure of the present invention；
Fig. 5 is the top view and section view mark figure after the present invention three stacking adds；
Fig. 6 is a-a sectional view；
Fig. 7 is b-b sectional view；
Fig. 8 is c-c sectional view.
In figure, 1, substrate；11st, silicon substrate；12nd, silicon dioxide layer；13rd, silicon nitride layer；14th, through hole；2nd, detect thin film；3、
Bottom electrode plate；31st, bottom electrode plate connecting portion；4th, electric pole plate；41st, release aperture；5th, silicon dioxide layer；6 insulating barriers；8th, gap
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.First of the present invention shown in Fig. 1 is real
Apply example.
A kind of capacitive MEMS pressure transducer, is sequentially provided with from top to bottom：
Substrate 1, detection thin film 2 and bottom electrode plate 3 and the electric pole plate 4 with lead.
Detection thin film 2 fixation is layed on the upper surface of substrate 1；Substrate 1 is provided with makes detection thin film 2 be situated between with extraneous work
Matter contacts and bears the through hole 14 (can also be arbitrary shape or groove) of its pressure；
Have lead electric pole plate 4 be fixedly connected on detection thin film 2 on (can also be fixed on the upper surface of substrate 1,
Size according to detection thin film 2 or design production technology need to determine), and positioned at detection thin film 2 top and thin with detecting
Form gap 8 between film 2；The work department of electric pole plate 4 is a flat board, can be the arbitrary shapes such as rectangle, polygon, circle,
Its edge be downwardly extending electric pole plate connecting portion and be fixedly connected on detection thin film 2 on (the upper of substrate 1 can also be fixed on
On surface), simultaneously work as the effect in support works portion, to bear during pressure electric pole plate 4 thin in detecting in order to be released in detection thin film 2
Compressed air in gap between film 2, arranges at least one on electric pole plate connecting portion or in electric pole plate work department
Individual release aperture 41 or other shapes of through hole and opening, the present embodiment is using being uniformly arranged 7 sides in electric pole plate work department
Shape release aperture, as shown in Figure 5.
There is the bottom electrode plate 3 of lead, it is fixedly installed on detection thin film 2, and is located at detection thin film 2 and electric pole plate
In gap 8 between 4, bottom electrode plate 3 constitutes electric capacity with electric pole plate 4.
In order to when detecting thin film 2 compressive deformation, bottom electrode plate 3 can keep horizontality to shift up, to improve electric capacity
The range of linearity that between measuring with upper/lower electrode plate electrode, spacing changes and changes, the middle part of bottom electrode plate 3 and detection thin film 2 are by a post
Body connects (can also be connect or other shapes of projection is connecting), the present embodiment be in the middle part of bottom electrode plate lower surface downwards
Extend the bottom electrode plate connecting portion 31 being formed.
The operation principle of the present embodiment is that outside working media passes through through hole 14 and applies pressure to detection thin film 2 lower surface,
Lead to its depressed deformation upwards, promote bottom electrode plate 3 to move up so that the gap between power-on and power-off pole plate diminishes, so that
Therebetween capacitance changes, and by detecting this capacitance change, converses pressure value, the present invention will detect thin film and
Battery lead plate separates, and first, battery lead plate no longer stress deformation, the range of linearity of detection greatly improves；Second, can divide as needed
The size of thin film and power-on and power-off pole plate Tiao Zheng not detected, be that the design of pressure transducer brings more degree of freedom, facilitate implementation
Balance between technical specification and cost.
The second embodiment of the present invention shown in Fig. 2-Fig. 8.
On the basis of embodiment 1, described detection thin film 2 is conductor (the present embodiment selection polysilicon), and is provided with lead,
Form chamber (i.e. gap described in embodiment 1) between electric pole plate 4 and described detection thin film 2, electric pole plate 4 is provided with
The release aperture 41 (the present embodiment is uniformly arranged 7) that at least one runs through, bottom electrode plate 3 in a chamber and with detection thin film 2
Connected by insulating barrier 6 (the present embodiment is silicon nitride layer), for optimisation technique index, bottom electrode plate 3 lower surface geometric center
Place is downwardly extending electrode plate connection parts 31 (and embodiment 1 take identical form), bottom electrode plate connecting portion 31 with
It is fixedly connected by insulating barrier 6 at the geometric center of work department upper surface of detection thin film 2.Make bottom electrode plate 3 and detection thin
Film 2 is dielectrically separated from.
Electric pole plate 4 pass through insulant (the present embodiment be silicon dioxide layer 5) be fixedly connected on detection thin film 2 (
Can be fixedly connected on as needed on the upper surface of described substrate 1) so that electric pole plate 4 and detection thin film 2 between insulate every
From.
In actual applications, by applying constant bias between electric pole plate 4 and detection thin film, may be constructed a method
Draw electromagnetism cage, effectively completely cut off the impact to bottom electrode for the external electromagnetic field, realize EMI protection.
In above-described embodiment, optimize structure further, substrate 1 is followed successively by silicon nitride layer 13, silicon dioxide layer from top to bottom
12 and silicon substrate 11, detection thin film is arranged on described silicon nitride layer 13.Detection thin film is polysilicon membrane.Electric pole plate and under
Battery lead plate is polysilicon and makes.Insulating barrier is made up of silicon nitride.The longitudinal central axis section of electric pole plate is n shape, by bottom electrode
Plate covers in its inner chamber, and its internal upper bottom surface is plane, and constitutes electric capacity with bottom electrode plate.
The invention has the beneficial effects as follows, due to thin film and electric capacity upper/lower electrode will be detected separately, not as wherein it
One, during device work, extraneous working media detects thin film with detection film contacts, compressing, drives detecting electrode bottom crown action,
Change upper/lower electrode pole spacing between plates, produce capacitance variations, and then external capacitor testing circuit is led to by lead, by detecting
The knots modification of electric capacity draws the change of upper/lower electrode pole spacing between plates, and then is converted into the pressure value of working media.Due to upper
Bottom electrode no longer stress deformation, its effective area substantially constant, capacitance is determined by spacing, simultaneously detection thin film and detection electric capacity
Area can separate regulation, when designing device under the device parameters of regulation can more flexible adjusting device size, with
Reduces cost.
The present invention also avoided from device architecture in conventional pressure sensor for improve sensitivity and adjust film dimensions
The problem that introduced non-linear and responding range changes.Pass through to apply between electric pole plate 4 and detection thin film simultaneously
Plus constant bias, may be constructed faraday's electromagnetism cage, effectively completely cut off the impact to bottom electrode for the external electromagnetic field, realize
EMI protects.
Claims (8)
1. capacitive MEMS pressure transducer is it is characterised in that include：
Substrate；
Detection thin film, fixation is layed on the upper surface of described substrate；Described substrate is provided with makes detection thin film and extraneous work
Medium contacts and bears through hole or the groove of its pressure；
There is the electric pole plate of lead, its be fixedly connected on the upper surface of described substrate or described detection thin film on, and be located at
Above described detection thin film and and described detection thin film between formed gap；
There is the bottom electrode plate of lead, its be fixedly installed on described detection thin film on, and be located at described detection thin film with described on
In gap between battery lead plate, described bottom electrode plate constitutes electric capacity, the middle part of described bottom electrode plate and institute with described electric pole plate
State detection film point to connect or by a raised or cylinder connection.
2. capacitive MEMS pressure transducer according to claim 1 it is characterised in that described detection thin film be conductor,
And it is provided with lead, form chamber between described electric pole plate and described detection thin film, described electric pole plate is provided with least one
The individual release aperture running through, described bottom electrode plate is located in described chamber and is connected by insulant with described detection thin film, institute
State electric pole plate to be fixedly connected on the upper surface of described substrate or be connected on described detection thin film by insulant.
3. capacitive MEMS pressure transducer according to claim 2 is it is characterised in that described bottom electrode plate lower surface is several
What center is downwardly extending a connecting portion, the geometric center of the work department upper surface of described connecting portion and described detection thin film
Place is fixedly connected by insulating barrier.
4. capacitive MEMS pressure transducer according to claim 2 it is characterised in that described substrate from top to bottom successively
For silicon nitride layer, silicon dioxide layer and silicon, described detection thin film is arranged on described silicon nitride layer.
5. capacitive MEMS pressure transducer according to claim 2 is it is characterised in that described detection thin film is polysilicon
Thin film.
6. capacitive MEMS pressure transducer according to claim 2 is it is characterised in that described electric pole plate and bottom electrode
Plate is polysilicon and makes.
7. capacitive MEMS pressure transducer according to claim 3 is it is characterised in that described insulating barrier is silicon nitride system
Become.
8. capacitive MEMS pressure transducer according to claim 7 is it is characterised in that in the longitudinal direction of described electric pole plate
Axle section is n shape, and described bottom electrode plate is covered in its inner chamber, and its internal upper bottom surface is plane, and with described bottom electrode plate
Constitute electric capacity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310463120.0A CN104515640B (en) | 2013-10-08 | 2013-10-08 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
| PCT/CN2014/087935 WO2015051729A1 (en) | 2013-10-08 | 2014-09-30 | Capacitive type mems pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310463120.0A CN104515640B (en) | 2013-10-08 | 2013-10-08 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
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| Publication Number | Publication Date |
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| CN104515640A CN104515640A (en) | 2015-04-15 |
| CN104515640B true CN104515640B (en) | 2017-02-22 |
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| CN201310463120.0A Active CN104515640B (en) | 2013-10-08 | 2013-10-08 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
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| WO (1) | WO2015051729A1 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016203106A1 (en) * | 2015-06-15 | 2016-12-22 | Teknologian Tutkimuskeskus Vtt Oy | Mems capacitive pressure sensor and manufacturing method |
| JP6309498B2 (en) * | 2015-09-11 | 2018-04-11 | 株式会社鷺宮製作所 | Capacitance detection pressure switch and pressure sensor |
| CN106896970B (en) * | 2017-03-15 | 2019-06-21 | 上海大学 | A kind of touch sensing and preparation method |
| CN107830966B (en) * | 2017-12-05 | 2023-08-29 | 苏州科技大学 | MEMS gas pressure sensor and manufacturing process thereof |
| CN107957273B (en) * | 2018-01-16 | 2024-05-03 | 北京先通康桥医药科技有限公司 | Sensor with touch-press and ultrasonic functions |
| US11027967B2 (en) * | 2018-04-09 | 2021-06-08 | Invensense, Inc. | Deformable membrane and a compensating structure thereof |
| CN109238518B (en) * | 2018-09-17 | 2021-11-05 | 胡耿 | Micro-polar distance capacitance type force-sensitive sensor and manufacturing method thereof |
| US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
| CN109212328A (en) * | 2018-10-24 | 2019-01-15 | 清华大学 | High-precision high field intensity capacitance type minitype electric field measurement senser element based on piezoelectric effect |
| CN109974926B (en) * | 2019-05-06 | 2024-03-01 | 深圳市湃科集成技术有限公司 | Multi-gear output differential pressure sensor |
| CN110482475A (en) * | 2019-07-12 | 2019-11-22 | 电子科技大学 | A kind of capacitance pressure transducer, based on MEMS |
| CN110683507B (en) * | 2019-08-27 | 2023-05-26 | 华东光电集成器件研究所 | Anti-interference MEMS device |
| CN111060231B (en) * | 2019-12-31 | 2021-12-21 | 捷普电子(新加坡)公司 | Capacitive pressure sensor and method for manufacturing the same |
| CN112924056B (en) * | 2020-02-26 | 2023-03-17 | 钛深科技(深圳)有限公司 | Film pressure sensor |
| CN112397479B (en) * | 2020-11-25 | 2022-07-22 | 思瑞浦微电子科技（苏州）股份有限公司 | Isolation capacitor and preparation method thereof |
| CN113237585B (en) * | 2021-03-29 | 2022-08-23 | 湖南久钰电子有限公司 | Capacitive torque sensor and intelligent vehicle monitoring system |
| CN114754904B (en) * | 2022-03-30 | 2023-09-29 | 青岛歌尔智能传感器有限公司 | MEMS capacitive sensor and preparation method thereof |
| CN115307788A (en) * | 2022-07-08 | 2022-11-08 | 重庆大学 | Method for determining capacitance of non-contact type round conductive film variable capacitor |
| CN115307789A (en) * | 2022-07-08 | 2022-11-08 | 重庆大学 | Method for determining capacitance of contact type circular conductive film variable capacitor |
| CN116659711B (en) * | 2023-07-28 | 2023-09-29 | 苏州敏芯微电子技术股份有限公司 | MEMS pressure sensor and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355422A (en) * | 2000-11-23 | 2002-06-26 | 大连理工大学 | Pressure sensor and its planar compound differnetiating method |
| CN101680813A (en) * | 2007-06-04 | 2010-03-24 | 恩德莱斯和豪瑟尔两合公司 | Capacitive pressure sensor |
| CN102183335A (en) * | 2011-03-15 | 2011-09-14 | 迈尔森电子（天津）有限公司 | Mems pressure sensor and manufacturing method thereof |
| CN102944352A (en) * | 2012-11-12 | 2013-02-27 | 中国航天科技集团公司第五研究院第五一〇研究所 | Capacitance film type pressure sensor capable of enhancing stability of electrode plate |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07318445A (en) * | 1994-05-26 | 1995-12-08 | Yazaki Corp | Capacitance type pressure sensor and manufacture thereof |
| US6912910B2 (en) * | 2002-12-19 | 2005-07-05 | Anelva Corporation | Capacitive pressure sensor |
| US20090160462A1 (en) * | 2007-12-23 | 2009-06-25 | Divyasimha Harish | Microelectromechanical capacitor based device |
| US8334159B1 (en) * | 2009-03-30 | 2012-12-18 | Advanced Numicro Systems, Inc. | MEMS pressure sensor using capacitive technique |
| CN102062662B (en) * | 2010-11-05 | 2012-10-10 | 北京大学 | Monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and production method thereof |
| CN202150936U (en) * | 2011-05-18 | 2012-02-22 | 上海丽恒光微电子科技有限公司 | MEMS sensor |
| CN102249177B (en) * | 2011-05-18 | 2014-02-05 | 上海丽恒光微电子科技有限公司 | Micro-electromechanical sensor and forming method thereof |
| CN202153165U (en) * | 2011-07-14 | 2012-02-29 | 无锡芯感智半导体有限公司 | Capacitive MEMS (Micro-Electro-Mechanical System) pressure sensor |
| EP2637007B1 (en) * | 2012-03-08 | 2020-01-22 | ams international AG | MEMS capacitive pressure sensor |
-
2013
- 2013-10-08 CN CN201310463120.0A patent/CN104515640B/en active Active
-
2014
- 2014-09-30 WO PCT/CN2014/087935 patent/WO2015051729A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355422A (en) * | 2000-11-23 | 2002-06-26 | 大连理工大学 | Pressure sensor and its planar compound differnetiating method |
| CN101680813A (en) * | 2007-06-04 | 2010-03-24 | 恩德莱斯和豪瑟尔两合公司 | Capacitive pressure sensor |
| CN102183335A (en) * | 2011-03-15 | 2011-09-14 | 迈尔森电子（天津）有限公司 | Mems pressure sensor and manufacturing method thereof |
| CN102944352A (en) * | 2012-11-12 | 2013-02-27 | 中国航天科技集团公司第五研究院第五一〇研究所 | Capacitance film type pressure sensor capable of enhancing stability of electrode plate |
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| CN104515640A (en) | 2015-04-15 |
| WO2015051729A1 (en) | 2015-04-16 |
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