CN106932636A - Three capacitance microwave power sensors for referring to cross structure - Google Patents
Three capacitance microwave power sensors for referring to cross structure Download PDFInfo
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- CN106932636A CN106932636A CN201710312055.XA CN201710312055A CN106932636A CN 106932636 A CN106932636 A CN 106932636A CN 201710312055 A CN201710312055 A CN 201710312055A CN 106932636 A CN106932636 A CN 106932636A
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- mems cantilever
- cantilever beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
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Abstract
The invention discloses the capacitance microwave power sensor that a kind of three refer to cross structure, with GaAs substrate, coplanar waveguide transmission line, online capacitance microwave power sensor are designed with substrate, online capacitance microwave power sensor is included on substrate alternately fixed three MEMS cantilever beams, two of which MEMS cantilever beam lower surfaces are coated with insulating barrier silicon nitride, middle MEMS cantilever beams naked layer, as the dielectric for forming by two nakeds layer MEMS cantilever beams electric capacity.When microwave signal is in coplanar wave guide transmission, an electrostatic force can be produced beam is produced displacement on the MEMS cantilever beams of naked layer, and the electrostatic force produced on the MEMS cantilever beams of insulating barrier is coated with two and is insufficient to allow its drop-down；The dielectric constant of the electric capacity formed between causing two MEMS cantilever beams for being coated with insulating barrier changes, and the variable quantity of electric capacity is detected by capacitive detection circuit, so as to release the power magnitude of microwave signal.
Description
Technical field
The present invention relates to the capacitance microwave power sensor that a kind of three refer to cross structure, belong to microelectromechanical systems skill
Art field.
Background technology
In microelectromechanical systems（MEMS）Microwave study in, microwave power be characterize microwave signal an important ginseng
Number.Generation in microwave signal, transmission and receive the research of links, the detection of microwave power is essential.Most
Common microwave power detector is the terminal power sensor based on heat to electricity conversion principle, and they have low-loss and highly sensitive
The advantage of degree, but have the disadvantage to consume input power completely when microwave power is measured.
With the development of microelectric technique, online microwave power detector is occurred in that so that the microwave letter when power is measured
Number or it is available.
The content of the invention
The technical problems to be solved by the invention are to provide the capacitance microwave power sensor of three finger cross structures, in lining
Alternately fixed three MEMS cantilever beams on bottom, two lower surfaces are coated with the electric capacity that the MEMS cantilever beams of insulating barrier are formed, in
Between MEMS cantilever beams serve as the part dielectric of electric capacity, when microwave signal is conducted, make the cantilever beam of naked layer drop-down, electric capacity
Dielectric change；In the case where microwave signal transmission is not influenceed, can just be realized to micro- by measuring the capacitance for changing
The on-line checking of wave power.The present invention can carry out on-line measurement to the power of microwave signal, and microwave signal still can use during measurement, by mistake
Difference is smaller, and structure is novel, and is easy to integrated.
The present invention uses following technical scheme to solve above-mentioned technical problem：
The present invention provide it is a kind of three refer to cross structure capacitance microwave power sensors, the sensor with GaAs substrate,
Co-planar waveguide CPW transmission lines, online capacitance microwave power sensor are provided with substrate；The co-planar waveguide CPW transmission lines
Including CPW holding wires and it is arranged on first ground wire and the second ground wire of holding wire both sides；The online capacitance microwave power
Sensor is made up of three MEMS cantilever beams being staggeredly fixed on substrate, wherein, a MEMS cantilever beams are arranged on CPW signals
Between line and the first ground wire, second, third MEMS cantilever beam is arranged between CPW holding wires and the second ground wire, second, first,
3rd MEMS cantilever beams refer to staggered arranged distribution into three successively；The lower surface of second, third MEMS cantilever beam is coated with absolutely respectively
Edge layer, forms an electric capacity, and the lower surface of a MEMS cantilever beams is not coated with insulating barrier, used as the dielectric of the electric capacity；From
2nd, the 3rd MEMS cantilever beams draw two electrodes respectively, used as capacitance detecting port.
Used as further prioritization scheme of the invention, each described MEMS cantilever beam is fixed on substrate by bridge pier.
Used as further prioritization scheme of the invention, bridge pier is fabricated to by gold.
Used as further prioritization scheme of the invention, each described MEMS cantilever beam is made by gold.
Used as further prioritization scheme of the invention, the co-planar waveguide CPW transmission lines are arranged on the centre of substrate.
Used as further prioritization scheme of the invention, two electrode ports are made by gold.
Used as further prioritization scheme of the invention, the insulating barrier of second, third MEMS cantilever beam lower surface is nitridation
Silicon.
Using above technical scheme compared with prior art, the present invention three refers to the electric capacity type micro-wave work(of cross structure to the present invention
Rate sensor has following significant advantage：
1st, structure is novel：Compared to the microwave power detector of traditional MEMS cantilever beam structures, the present invention is interlocked by three
MEMS cantilever beams are constituted, and two of which MEMS cantilever beam lower surfaces are coated with insulating barrier, middle MEMS cantilever beams naked layer,
Structure is novel；
2nd, sensitivity is high：When signal transmission comes, an electrostatic force is produced on the MEMS cantilever beams of naked layer, under making beam
Draw, two such is coated with the dielectric change of formation electric capacity between the MEMS cantilever beams of insulating barrier, and capacitance change is than traditional
Capacitive MEMS microwave power detector is big；And the present invention uses cantilever beam structure, can subtract compared to traditional fixed beam structure
Influence of the residual stress on beam to microwave property less, sensitivity is high；
3rd, on-line measurement：When microwave signal just makes the MEMS cantilever beams of naked layer drop-down when holding wire is transmitted, and then change
Two are coated between the MEMS cantilever beams of insulating barrier the dielectrics for forming electric capacity；The present invention is extracted and measurement is carried out simultaneously, and
Do not consume microwave power completely, make microwave signal incoming terminal or available, be easy to integrated on the piece with other microwave systems
（On-chip Integration）；
4th, the present invention is that the principal advantages with MEMS, such as small volume, lightweight, power consumption are low based on MEMS technology；
5th, structure of the invention is entirely that passive device is constituted, it is not necessary to consume dc power；And with the integrated electricity of monolithic microwave
Road（MMIC）Technique is completely compatible, is easy to integrated, and this series of advantages is that traditional microwave power detector is incomparable, because
This it there is research and application value well.
Brief description of the drawings
Fig. 1 is the structural representation of the capacitance microwave power sensor that the present invention three refers to cross structure.
Fig. 2 is Local map of the present invention when power is measured.
In figure：1- gallium arsenide substrates, 2-CPW holding wires, 3,4-CPW ground wires, 5,8,9-MEMS cantilever beams, 6,7- insulating barriers
Silicon nitride, 10- film bridges, 11,12- electrodes, MEMS cantilever beams when 13- works, the MEMS cantilevers of naked layer when 14- is static
Beam.
Specific embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings：
Of the invention three capacitance microwave power sensors for referring to cross structure, as shown in figure 1, by GaAs substrate, lining
Co-planar waveguide CPW transmission lines, online capacitance microwave power sensor composition that bottom is provided with.Co-planar waveguide CPW transmission lines are
It is made up of CPW center signals line and CPW ground wires.Capacitance microwave power sensor is alternately fixed three on substrate
MEMS cantilever beams, two of which MEMS cantilever beam lower surfaces are coated with insulating barrier silicon nitride, and the two MEMS cantilever beams form one
Electric capacity；Middle MEMS cantilever beams naked layer, the MEMS cantilever beams of naked layer may act as a part of dielectric of electric capacity；From
Two MEMS cantilever beams for being coated with insulating barrier draw two electrodes, used as capacitance detecting port.When microwave signal is in co-planar waveguide
During transmission, an electrostatic force can be produced to make beam drop-down on the MEMS cantilever beams of naked layer, and insulating barrier is coated with two
The electrostatic force produced on MEMS cantilever beams is insufficient to allow its drop-down；So, formed between two MEMS cantilever beams for being coated with insulating barrier
Electric capacity dielectric constant change, the variable quantity of electric capacity is measured by capacitive detection circuit, so as to measure power.
In embodiments of the invention, as shown in figure 1, CPW center signals line 2 is provided with the centre of gallium arsenide substrate 1,
CPW center signals line 2 is respectively provided on two sides with CPW ground wires 3 and CPW ground wires 4, is logical between CPW ground wires 3 and CPW center signals line 2
Cross bridge pier（Bridge pier is made by gold）The fixed MEMS cantilever beams 5 made by gold, CPW ground wires 4 and CPW center signals line 2
Between be two by bridge pier fix by gold make MEMS cantilever beams 8,9, plated respectively in the lower surface of MEMS cantilever beams 8,9
There is insulating barrier silicon nitride 6,7.MEMS cantilever beams 8,9 form an electric capacity, and MEMS cantilever beams 5 serve as the dielectric of the electric capacity.From
MEMS cantilever beams 8,9 draw two electrodes 11,12, as the port at capacitance detecting end, wherein, electrode 11,12 is made by gold
Into.Three MEMS cantilever beams 5,8,9 refer to staggered arranged distribution, fixed MEMS between MEMS cantilever beams 8,9 into three successively
Cantilever beam 5.
The electrode 11,12 as capacitance detecting port drawn from MEMS cantilever beams 8,9 can typically have two kinds of realization sides
Formula：One kind is that two electrodes are directly passed through between CPW ground wires 4 and CPW center signals line 2；Another kind is as shown in figure 1, first
From 4 taken intermediate of CPW ground wires, two breach so that two electrodes are passed through（Electrode is non-intersect with CPW ground wires 4）, again pass through film bridge 10
The CPW ground wires 4 that will be blocked are coupled together.
The present invention three refers to the capacitance microwave power sensor of cross structure when working as shown in Fig. 2 MEMS cantilever beams 8,9
Lower surface be coated with insulating barrier silicon nitride, the two MEMS cantilever beams formed an electric capacity；The middle naked of MEMS cantilever beams 5
Layer, the MEMS cantilever beams 5 of naked layer may act as a part of dielectric of electric capacity.When microwave signal is in coplanar wave guide transmission,
An electrostatic force can be produced, make naked layer MEMS cantilever beams 5 it is drop-down, and be coated with two insulating barrier MEMS cantilever beams 8,
The electrostatic force produced on 9 is insufficient to allow its drop-down；So, the electric capacity for being formed between two MEMS cantilever beams 8,9 for being coated with insulating barrier
Dielectric constant change, the variable quantity of electric capacity is measured by capacitive detection circuit, so as to measure microwave power.
The above, the only specific embodiment in the present invention, but protection scope of the present invention is not limited thereto, and appoints
What be familiar with the people of the technology disclosed herein technical scope in, it will be appreciated that the conversion or replacement expected, should all cover
It is of the invention include within the scope of, therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (7)
1. three refer to cross structures capacitance microwave power sensor, it is characterised in that the sensor with GaAs substrate,
Substrate is provided with co-planar waveguide CPW transmission lines, online capacitance microwave power sensor；The co-planar waveguide CPW transmission line bags
Include CPW holding wires and be arranged on first ground wire and the second ground wire of holding wire both sides；The online capacitance microwave power is passed
Sensor is made up of three MEMS cantilever beams being staggeredly fixed on substrate, wherein, a MEMS cantilever beams are arranged on CPW holding wires
And first between ground wire, second, third MEMS cantilever beam is arranged between CPW holding wires and the second ground wire, second, first,
Three MEMS cantilever beams refer to staggered arranged distribution into three successively；The lower surface of second, third MEMS cantilever beam is coated with insulation respectively
Layer, forms an electric capacity, and the lower surface of a MEMS cantilever beams is not coated with insulating barrier, used as the dielectric of the electric capacity；From second,
3rd MEMS cantilever beams draw two electrodes respectively, used as capacitance detecting port.
2. according to claim 1 three refer to the capacitance microwave power sensor of cross structure, it is characterised in that each institute
MEMS cantilever beams are stated to be fixed on substrate by bridge pier.
3. it is according to claim 2 three refer to cross structure capacitance microwave power sensor, it is characterised in that bridge pier by
Gold is fabricated to.
4. according to claim 1 three refer to the capacitance microwave power sensor of cross structure, it is characterised in that each institute
MEMS cantilever beams are stated to be made by gold.
5. according to claim 1 three refer to the capacitance microwave power sensor of cross structure, it is characterised in that described common
Waveguide CPW transmission lines in face are arranged on the centre of substrate.
6. according to claim 1 three refer to the capacitance microwave power sensor of cross structure, it is characterised in that two institutes
Electrode is stated to be made by gold.
7. according to claim 1 three refer to the capacitance microwave power sensor of cross structure, it is characterised in that second,
The insulating barrier of the 3rd MEMS cantilever beam lower surfaces is silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710312055.XA CN106932636B (en) | 2017-05-05 | 2017-05-05 | Capacitive microwave power sensor with three-finger staggered structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710312055.XA CN106932636B (en) | 2017-05-05 | 2017-05-05 | Capacitive microwave power sensor with three-finger staggered structure |
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| Publication Number | Publication Date |
|---|---|
| CN106932636A true CN106932636A (en) | 2017-07-07 |
| CN106932636B CN106932636B (en) | 2023-04-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107632193A (en) * | 2017-09-28 | 2018-01-26 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN110579643A (en) * | 2019-09-16 | 2019-12-17 | 南京邮电大学 | Microwave power sensor based on arc-shaped clamped beam |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119257A (en) * | 1999-10-07 | 2001-04-27 | Lg Electronics Inc | Very high frequency variable filter using microelectronic mechanical system |
| US20020124385A1 (en) * | 2000-12-29 | 2002-09-12 | Asia Pacific Microsystem, Inc. | Micro-electro-mechanical high frequency switch and method for manufacturing the same |
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101414701A (en) * | 2008-11-19 | 2009-04-22 | 东南大学 | Microelectron mechanical socle beam type microwave power coupler and preparation method thereof |
| US7583169B1 (en) * | 2007-03-22 | 2009-09-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MEMS switches having non-metallic crossbeams |
| US20100084721A1 (en) * | 2008-10-02 | 2010-04-08 | Mingching Wu | Micro-Electromechanical System Microstructure |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103364636A (en) * | 2013-06-19 | 2013-10-23 | 东南大学 | Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104953980A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaN-based low-current-leakage switched capacitor filter provided with cantilever beams and preparation method |
| CN106199173A (en) * | 2016-07-19 | 2016-12-07 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure and method |
| CN206756928U (en) * | 2017-05-05 | 2017-12-15 | 南京邮电大学 | Three refer to the capacitance microwave power sensor of cross structure |
-
2017
- 2017-05-05 CN CN201710312055.XA patent/CN106932636B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119257A (en) * | 1999-10-07 | 2001-04-27 | Lg Electronics Inc | Very high frequency variable filter using microelectronic mechanical system |
| US20020124385A1 (en) * | 2000-12-29 | 2002-09-12 | Asia Pacific Microsystem, Inc. | Micro-electro-mechanical high frequency switch and method for manufacturing the same |
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| US7583169B1 (en) * | 2007-03-22 | 2009-09-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MEMS switches having non-metallic crossbeams |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| US20100084721A1 (en) * | 2008-10-02 | 2010-04-08 | Mingching Wu | Micro-Electromechanical System Microstructure |
| CN101414701A (en) * | 2008-11-19 | 2009-04-22 | 东南大学 | Microelectron mechanical socle beam type microwave power coupler and preparation method thereof |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN101915870A (en) * | 2010-07-12 | 2010-12-15 | 东南大学 | MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and production method thereof |
| CN103048540A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on cantilever beam and direct-type power sensor |
| CN103364636A (en) * | 2013-06-19 | 2013-10-23 | 东南大学 | Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector |
| CN103777066A (en) * | 2014-01-03 | 2014-05-07 | 南京邮电大学 | Microelectronic mechanical dual channel microwave power detection system and preparation method thereof |
| CN104655921A (en) * | 2015-02-16 | 2015-05-27 | 南京邮电大学 | Microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and preparation method of microwave power detection system |
| CN104953980A (en) * | 2015-07-01 | 2015-09-30 | 东南大学 | GaN-based low-current-leakage switched capacitor filter provided with cantilever beams and preparation method |
| CN106199173A (en) * | 2016-07-19 | 2016-12-07 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure and method |
| CN206756928U (en) * | 2017-05-05 | 2017-12-15 | 南京邮电大学 | Three refer to the capacitance microwave power sensor of cross structure |
Non-Patent Citations (1)
| Title |
|---|
| 王德波等: "双通道MEMS微波功率传感器的悬臂梁设计" * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107632193A (en) * | 2017-09-28 | 2018-01-26 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN107632193B (en) * | 2017-09-28 | 2019-05-07 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN110579643A (en) * | 2019-09-16 | 2019-12-17 | 南京邮电大学 | Microwave power sensor based on arc-shaped clamped beam |
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| CN106932636B (en) | 2023-04-25 |
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