CN106872767A - Clamped beam indirect heating type microwave signal detector device - Google Patents

Clamped beam indirect heating type microwave signal detector device Download PDF

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CN106872767A
CN106872767A CN201710052685.8A CN201710052685A CN106872767A CN 106872767 A CN106872767 A CN 106872767A CN 201710052685 A CN201710052685 A CN 201710052685A CN 106872767 A CN106872767 A CN 106872767A
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microwave
power
indirect heating
detector
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CN106872767B (en
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廖小平
闫浩
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Southeast University
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)

Abstract

Clamped beam indirect heating type microwave signal detector device of the invention is made up of sensor, analog-to-digital conversion, MCS51 single-chip microcomputers and liquid crystal display four module, sensor is by six port clamped beam couplers, channel selector switch, microwave frequency detector, microwave phase detector device is constituted；The first port of six port clamped beam couplers is identical to fifth port, the power degree of coupling of the 6th port difference to the 3rd port, the 4th port and first port, measured signal is input into through first port, indirect heated microwave power detector is exported by second port, by the 4th port and the 6th port output indirect heating type microwave phase detector device, by the 3rd port and fifth port selecting switch；7th port of channel selector switch and the 8th connects indirect heating type microwave power detector, and the 9th port of channel selector switch and the tenth port connect microwave frequency detector；Final power, phase, three kinds of detections of microwave parameter of frequency for realizing a chip simultaneously to microwave signal.

Description

Clamped beam indirect heating type microwave signal detector device
Technical field
The present invention proposes clamped beam indirect heating type microwave signal detector device, belongs to the technology of microelectromechanical systems Field.
Background technology
The parameters such as amplitude, power, the frequency of microwave signal are traditional measurement parameters.Microwave signal phase measurement not only with Power measurement is related, and itself also occupies highly important status in microwave measurement.With the increase of frequency, signal Wavelength is progressively approached with various component sizes in circuit, and voltage, electric current exist all in the form of ripple in circuit, the phase of signal Postpone to cause that not only the voltage of various location, electric current are different in synchronization amplitude in circuit, and at same position Voltage, electric current also not different in the same time.Therefore grasped in microwave frequency band and the phase of control signal is necessary , the phase of microwave signal is also just into an important measurement parameter.The present invention is single based on Si technological design one kind Chip realizes detection microwave power, phase, the clamped beam indirect heating type microwave signal detector device of frequency simultaneously.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of clamped beam indirect heating type microwave signal detector device, application Six port clamped beam Coupler ports come the detection functional module that is of coupled connections different, and by analog-to-digital conversion by parameter to be measured It is directly displayed on LCD screen, it is achieved thereby that a chip is simultaneously to power, phase, three kinds of microwaves of frequency of microwave signal The detection of parameter, the benefit with low-power consumption, low cost.
Technical scheme：Clamped beam indirect heating type microwave signal detector device of the invention be by sensor, analog-to-digital conversion, MCS51 single-chip microcomputers and the big module composition of liquid crystal display four, this four big modules are again by some basic little modules and circuit structure Into.
Wherein Sensor section is by six port clamped beam couplers, channel selector switch, microwave frequency detector, microwave phase Bit detector constitutes the first port of six port clamped beam couplers to the 3rd port, the 4th port and first port to the 5th Port, the power degree of coupling of the 6th port distinguish identical, and measured signal is input into through first port, by second port output to first Indirect heating type microwave power detector, the first of microwave phase detector device is respectively outputted to by the 4th port and the 6th port Wilkinson power combiners and the 2nd Wilkinson power combiners, and by a Wilkinson power combiners and Two Wilkinson power combiners connect the second indirect heating type microwave power detector and the inspection of the 3rd indirect heating type microwave power Survey device；Connect to the 7th port of channel selector switch channel selector switch and the 8th port by the 3rd port and fifth port output Second indirect heating type microwave power detector and the 3rd indirect heating type microwave power detector, the 9th of channel selector switch the Port and the tenth port connect the 3rd Wilkinson power combiners of microwave frequency detector, are closed by the 3rd Wilkinson power Grow up to be a useful person and connect the 5th indirect heating type microwave power detector, it is achieved thereby that to microwave signal power, phase, frequency detection.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it Into；Co-planar waveguide is produced on SiO2On layer, anchor area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
Second big module is analog-to-digital conversion part, and its Main Function is the work(that will be exported in three little modules of sensor Rate is directly changed into data signal, and this part is mainly the peripheral circuit constituted by STM32 microprocessors and by AD620 chips Constituted.
Followed by MCS51 single chip parts, its Main Function is exactly to carry out formula to each magnitude of voltage to be calculated need The numerical value of frequency, phase and the power wanted.
It is exactly finally liquid-crystal display section, its Main Function is exactly that the data signal that will be obtained directly carries out showing defeated Go out, draw the reading of frequency, phase and the power of measured signal.
Beneficial effect：
1) clamped beam indirect heating type microwave signal detector device of the invention is by the power of microwave signal, phase, frequency Survey module for three kinds to be integrated together, input signal to different detections is coupled using the clamped beam of six port clamped beam couplers Functional module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of detections of microwave parameter of frequency, have Low-power consumption, the benefit of low cost；
2) clamped beam indirect heating type microwave signal detector device application indirect heating type microwave power sensing of the invention Device detects the power of microwave signal, with preferable microwave property and without DC power；
3) the two Wilkinson power combiners of microwave phase detector module application in the present invention, a Wilkinson Power divider and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Brief description of the drawings
Fig. 1 is the structured flowchart of clamped beam indirect heating type microwave signal detector device of the present invention,
Fig. 2 is the theory diagram of clamped beam indirect heating type microwave signal detector device of the present invention,
Fig. 3 is the top view of six port clamped beam couplers,
Fig. 4 is AA ' the directional profile figures of the port clamped beam couplers of Fig. 3 six,
Fig. 5 is the top view of channel selector switch,
Fig. 6 is AA ' the directional profile figures of Fig. 5 channel selector switch,
Fig. 7 is the top view of Wilkinson power divider/synthesizers,
Fig. 8 is the top view of indirect heating type microwave power detector,
Fig. 9 is AA ' the directional profile figures of Fig. 8 indirect heating type microwave power detectors,
Figure 10 is the circuit diagram of Fig. 1 analog-to-digital conversion modules.
Figure includes：Six port clamped beam couplers 1, channel selector switch 2, microwave frequency detector, 3, microwave phase Detector 4, the first indirect heating type microwave power detector 5-1, the second indirect heating type microwave power detector 5-2, the 3rd Indirect heating type microwave power detector 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirectly heat declines Wave power sensor 5-5, the 6th indirect heating type microwave power detector 5-6, a Wilkinson power combiner 6-1, the Two Wilkinson power combiners 6-2, the 3rd Wilkinson power combiner 6-3, Wilkinson power divider 7, Si linings Bottom 8, SiO2Layer 9, co-planar waveguide 10, anchor area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16 are non- Symmetrical coplanar striplines 17, isolation resistance 18, terminal resistance 19, P-type semiconductor arm 20, N-type semiconductor arm 21, output electrode 22, Hot junction 23, cold end 24, substrate film structure 25, pull-down electrode 26, first port 1-1, second port 1-2, the 3rd port 1-3, 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth Port 2-4, the tenth Single port 6-1, the tenth Two-port netwerk 6-2, the 13rd port 6-3.
Specific embodiment
Sensor section is coupled by six port clamped beams in clamped beam indirect heating type microwave signal detector device of the present invention Device 1, channel selector switch 2, microwave frequency detector 3, the cascade of microwave phase detector device 4 is constituted；Six port clamped beam couplers 1 By co-planar waveguide 10, dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, clamped beam 13 anchor area 11 is produced on co-planar waveguide 10, and the lower section of clamped beam 13 deposition has a dielectric layer 12, and with air layer 15, clamped beam 13 collectively form coupled capacitor structure, and the length of co-planar waveguide 10 between two clamped beams 13 is λ/4；Channel selector switch 2 by Co-planar waveguide 10, anchor area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26 is constituted；The anchor area 11 of cantilever beam 14 is produced on altogether In face waveguide 10, the lower section of cantilever beam 14 makes pull-down electrode 26, and collectively forms switch with the upper dielectric layer 12 of pull-down electrode 26 Structure；Microwave frequency detector 3 is sensed by the 3rd Wilkinson power combiners 6-3 and the 6th indirect heating type microwave power Device 5-6 cascades are constituted；Microwave phase detector device 4 is by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type Microwave power detector 5-5, Wilkinson power combiner 6-1, a 2nd Wilkinson power combiner 6-2, Wilkinson power dividers 7 are constituted；Wilkinson power combiners, the topological structure phase of Wilkinson power dividers Together, it is made up of co-planar waveguide 10, asymmetrical coplanar stripline 17 and air bridges 15, isolation resistance 18, signal is from the tenth Single port 6-1 It is Wilkinson power dividers to be input into, and from the tenth Two-port netwerk 6-2, it is Wilkinson work(that the 13rd port 6-3 is input into signal Rate synthesizer；
The port 1-3 of first port 1-1 to the 3rd, the 4th port 1-4 and first port of six port clamped beam couplers 1 1-1 to fifth port 1-5, the power degree of coupling of the 6th port 1-6 distinguish identical；Measured signal is through six port clamped beam couplers 1 first port 1-1 inputs, by second port 1-2 outputs to the first indirect heating type microwave power detector 5-1, by the 4th Port 1-4 and the 6th port 1-6 outputs to microwave phase detector device 4, by the 3rd port 1-3 and fifth port 1-5 outputs to leading to Road selecting switch 2；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 connect the second indirectly heat type micro-wave work(respectively Rate sensor 5-2, the 3rd indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selector switch 2 and the tenth Port 2-4 connects microwave frequency detector 3, and analog-to-digital conversion mould is connected to after each indirect heating type microwave power detector Block, the data signal for then obtaining these analog-to-digital conversions all accesses MCS51 single-chip microcomputers and carries out formula calculating, finally by liquid crystal The numerical values recited of display screen display output frequency, phase and power, realizes power, phase of the chip simultaneously to microwave signal Position, three kinds of detections of microwave parameter of frequency, the benefit with low-power consumption, low cost.Its microwave power, phase, the detection of frequency Principle can be explained as follows：
Power detection：Microwave power as shown in Figure 7 is input into from input port, and terminal resistance is input to by co-planar waveguide 10 19 are converted to heat；P-type semiconductor arm 20 and N-type semiconductor arm 21 constitute thermocouple, and thermocouple is near the area of terminal resistance 19 Used as hot junction 23, thermocouple is near the region of output electrode 22 as cold end 24 in domain；According to Seebeck effects, exported by measuring The thermoelectrical potential of electrode 22 understands input microwave power size；Substrate thinning is constituted substrate film knot by the back of hot junction 23 of thermocouple Structure 25 is sensitive to improve detection；Watt level P can be expressed by following formula：
Frequency detecting：Threeth port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1 Channel selector switch 2 is arrived in mouth 1-5 outputs；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 connect between second respectively Meet heated microwave power sensor 5-2, the 3rd indirect heating type microwave power detector 5-3, the 9th of channel selector switch 2 the Port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selector switch 2 is grounded, pull-down electrode 26 Driving voltage is connect, when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and passage is strobed；Work as channel selecting The 7th port 2-1 and the 8th port 2-2 of switch 2 be when being strobed, and can test out the output coupling of six port clamped beam couplers 1 Close power P3And P5.The length of co-planar waveguide 10 between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, now the The phase difference of three port 1-3 and fifth port 1-5 is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for being input into microwave signal, and c is the light velocity, εerFor effective dielectric constant is only relevant with structure.Work as channel selecting When the 9th port 2-3 and the tenth port 2-4 of switch 2 are strobed, two way microwave signals are by the 3rd Wilkinson power combings Device 6-3 carries out power combing, and the 6th indirect heating type microwave power detector 5-6 of application detects composite signal power PsGreatly It is small, the frequency of input microwave signal can be drawn according to formula (2).
P3, P5It is the power that the 3rd port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power Sensor 5-2 and the 3rd indirect heating type microwave power detector 5-3 detections are obtained.
Phase detectors：Microwave signal as shown in Figure 1 through six port clamped beam couplers 1 the 4th port 1-4 and the 6th Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it Between the length of co-planar waveguide 10 be λ/4, now by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6 It is 90 °；Input power Pr, the reference signal of f (microwave frequency detector 3 is measured) identical with measured signal frequency, reference signal It is divided into two-way power and phase identical signal through Wilkinson power dividers 7, with the 4th port 1-4 and the 6th port 1-6 Two-way measured signal carry out work(through a Wilkinson power combiners 6-1 and the 2nd Wilkinson power combiners 6-2 Rate synthesizes；4th indirect heating type microwave power detector 5-4 and the 5th indirect heating type microwave power detector 5-5 is to left and right Power P after two-way synthesiscs1, Pcs2Detected, and the phase difference and reference signal between to be measured is drawn by formula (3)
P4, P6It is the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
Second big module is analog-to-digital conversion part, and its Main Function is the work(that will be exported in three little modules of sensor Rate is directly changed into data signal, and this part is mainly the peripheral circuit constituted by STM32 microprocessors and by AD620 chips Constituted, then according to formula (1), (2), (3), (4), counter can be released the size of corresponding frequency f, phase Φ and power P：
The preparation method of sensor assembly includes following step in clamped beam indirect heating type microwave signal detector device Suddenly：
1) 4 inches of high resistant Si substrates 8 are prepared, resistivity is 4000 Ω cm, and thickness is 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 9；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, and thickness is 0.4mm；
4) one layer of photoresist and photoetching are coated, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and note Enter phosphorus (P) ion, doping concentration is 1015cm-2, form isolation resistance 18 and terminal resistance 19；
5) one layer of photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to the region of P-type semiconductor arm 20, other regions Glue protection is photo-etched, boron (B) ion is then poured into, doping concentration is 1016cm-2, form the P-type semiconductor arm 20 of thermocouple；
6) one layer of photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to the region of N-type semiconductor arm 21, other regions Glue protection is photo-etched, phosphorus (P) ion is then poured into, doping concentration is 1016cm-2, form the N-type semiconductor arm 21 of thermocouple；
7) one layer of photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching Arm and polysilicon resistance；
8) one layer of photoresist, photoetching removal co-planar waveguide 10, asymmetrical coplanar stripline 17, metal interconnecting wires output electricity are coated Photoresist at pole 22 and pull-down electrode 26；
9) electron beam evaporation (EBE) forms ground floor gold (Au), and thickness is 0.3mm, on removal photoresist and photoresist Au, stripping forms ground floor Au, output electrode 22, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetric coplanar strip 17 And pull-down electrode 26；
10) (LPCVD) one layer of Si is deposited3N4, thickness is 0.1mm；
11) one layer of photoresist is coated, photoetching simultaneously retains the photoresist below clamped beam 13 and cantilever beam 14, dry etching Si3N4, form dielectric layer 12；
12) one layer of air of uniform coating layer 15 and litho pattern, thickness is 2mm, is retained under clamped beam 13 and cantilever beam 14 The polyimides of side is used as sacrifice layer；
13) photoresist is coated, it is photoetching removal clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide 10, asymmetric coplanar Photoresist with line 17 and the position of output electrode 22；
14) Seed Layer of 500/1500/300A ° of Ti/Au/Ti, the thickness of re-plating one after Ti layers at the top of removal are evaporated Spend is Au layers of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide is formed 10th, asymmetrical coplanar stripline 17 and output electrode 22；
16) deep reaction ion etching (DRIE) the backing material back side, makes membrane structure 25；
17) polyimide sacrificial layer is discharged：Developer solution soaks, the polyimide sacrificial layer under removal clamped beam, deionization Water soaks slightly, absolute ethyl alcohol dehydration, is volatilized under normal temperature, dries.
Difference with the prior art of the present invention is：
Present invention employs six novel port clamped beam coupled structures, this clamped beam coupled structure is from co-planar waveguide A part is coupled out in the microwave signal of transmission, and power, frequency and the phase of microwave signal are detected using the signal being coupled out Position size application indirect heating type microwave power detector detects the power of microwave signal, with preferable microwave property and nothing DC power；Clamped beam indirect heating type microwave signal detector device of the invention realizes a chip to be believed microwave simultaneously Number power, phase, three kinds of detections of microwave parameter of frequency, with low-power consumption, low cost benefit
The structure for meeting conditions above is considered as clamped beam indirect heating type microwave signal detector device of the invention.

Claims (3)

1. a kind of clamped beam indirect heating type microwave signal detector device, it is characterised in that the Sensor section of the phase detectors By six ports clamped beam coupler (1), channel selector switch (2), microwave frequency detector (3) and microwave phase detector device (4) Cascade is constituted；The first port of six ports clamped beam coupler (1) is to the 3rd port, the 4th port and first port to the 5th Port, the power degree of coupling of the 6th port distinguish identical, and measured signal is input into through first port (1-1), by second port (1-2) Export to the first indirect heating type microwave power detector (5-1), it is defeated respectively by the 4th port (1-4) and the 6th port (1-6) Go out to a Wilkinson power combiners (6-1) of microwave phase detector device (4) and the 2nd Wilkinson power combiners (6-2), and connect between second by a Wilkinson power combiners (6-1) and the 2nd Wilkinson power combiners (6-2) Connect heated microwave power detector (5-2) and the 3rd indirect heating type microwave power detector (5-3)；By the 3rd port (1- 3) with the 7th port (2-1) and the 8th end of fifth port (1-5) output to channel selector switch (2) channel selector switch (2) Mouth (2-2) meets the second indirect heating type microwave power detector (5-2) and the 3rd indirect heating type microwave power detector (5- 3), the 9th port (2-3) and the tenth port (2-4) of channel selector switch (2) connect the 3rd of microwave frequency detector (3) Wilkinson power combiners (6-3), the 5th indirectly heat type micro-wave work(is connect by the 3rd Wilkinson power combiners (6-3) Rate detector (5-5)；Analog-to-digital conversion module is connected to after each indirect type thermoelectric (al) type power sensor, then by these The data signal that analog-to-digital conversion is obtained all accesses MCS51 single-chip microcomputers and carries out formula calculating, shows defeated finally by LCDs Go out the numerical values recited of frequency, phase and power, it is achieved thereby that to microwave signal power, phase, frequency detection；
Wherein, six ports clamped beam coupler (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchor area (11) are produced on co-planar waveguide (10) On, the lower section metallization medium layer (12) of clamped beam (13), and collectively form coupled capacitor knot with air layer (15), clamped beam (13) Structure, co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. clamped beam indirect heating type microwave signal detector device as described in claim 1, it is characterised in that channel selecting Switch (2) is made up of co-planar waveguide (10), anchor area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26)；Cantilever beam (14) anchor area (11) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (26), and with it is drop-down Electrode (26) upper dielectric layer (12) collectively form construction of switch；Cantilever beam (14) ground connection of channel selector switch (2), drop-down electricity Pole (26) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and passage is strobed.
3. the clamped beam indirect heating type microwave signal detector device as described in claim 1,2, it is characterised in that indirectly plus Hot type microwave work(sensor is by Si substrates (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (19), P-type semiconductor arm (20), N-type semiconductor arm (21), output electrode (22) is constituted；Microwave power is input to terminal resistance by co-planar waveguide (10) (19) it is converted to heat；P-type semiconductor arm (20) and N-type semiconductor arm (21) constitute thermocouple；According to Seebeck effects, Input microwave power size is understood by the thermoelectrical potential for measuring output electrode (22).
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