CN106645920A - Clamped beam T-junction indirect heating microwave signal detector - Google Patents
Clamped beam T-junction indirect heating microwave signal detector Download PDFInfo
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- CN106645920A CN106645920A CN201710052668.4A CN201710052668A CN106645920A CN 106645920 A CN106645920 A CN 106645920A CN 201710052668 A CN201710052668 A CN 201710052668A CN 106645920 A CN106645920 A CN 106645920A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
- G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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Abstract
The invention relates to a clamped beam T-junction indirect heating microwave signal detector composed of a six-port clamped beam coupler, a channel selection switch, a microwave frequency detector and a microwave phase detector which are in cascaded connection; the six-port clamped beam coupler is composed of a coplanar waveguide, a dielectric layer, an air layer, and a clamped beam. The first port to the third port, the fourth port, and the first port to the fifth port, the sixth port of the six-port clamped beam coupler have the same power coupling degree. A signal to be tested is input into the first port and output from the second port to a first indirect heating microwave power sensor, is output from the fourth port and the sixth port to the microwave phase detector, and is output from the third port and the fifth port to the channel selection switch. The seventh port and the eighth port of the channel selection switch are connected with an indirect heating microwave power sensor. The ninth port and the tenth port of the channel selection switch are connected with the microwave frequency detector so as to realize the microwave signal power, phase, frequency detection.
Description
Technical field
The present invention proposes clamped beam T junction indirect heating type microwave signal detector, belongs to microelectromechanical systems
Technical field.
Background technology
Microwave signal phase measurement occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is progressively close to various component sizes in circuit, in circuit voltage, electric current all in the form of ripple, the phase place of signal
Postpone to cause in circuit that not only the voltage of various location, electric current are different in synchronization amplitude, and at same position
Voltage, electric current also not different in the same time.Therefore grasp in microwave frequency band and the phase place of control signal is necessary
's.The present invention is to realize the clamped beam of detection microwave power, phase place, frequency simultaneously based on a kind of one single chip of Si technological designs
T junction indirect heating type microwave signal detector.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of clamped beam T junction indirect heating type microwave signal detector, should
The detection functional module for being of coupled connections different with six port clamped beam Coupler ports a, it is achieved thereby that chip is simultaneously right
The power of microwave signal, phase place, the detection of three kinds of microwave parameters of frequency, the benefit with low-power consumption, low cost.
Technical scheme：The clamped beam T junction indirect heating type microwave signal detector of the present invention is by six port clamped beam couplings
Clutch, channel selector switch, microwave frequency detector, microwave phase detector device composition；
The first port of six port clamped beam couplers is to the 3rd port, the 4th port and first port to the 5th end
Mouthful, the power degree of coupling of the 6th port it is identical, the input of measured signal Jing first ports, by second port output to first indirectly plus
Hot type microwave power detector, the first T junction power exported to microwave phase detector device by the 4th port and the 6th port is closed
Grow up to be a useful person and the second T junction power combiner, and the 4th is connect by the first T junction power combiner and the second T junction power combiner
Indirect heating type microwave power detector and the 5th connects heated microwave power sensor；Exported by the 3rd port and fifth port
To channel selector switch；7th port of channel selector switch and the 8th port connect respectively the second indirect heating type microwave power biography
Sensor and the 3rd indirect heating type microwave power detector, the 9th port of channel selector switch and the tenth port connect microwave frequency
3rd T junction power combiner of detector, by the 3rd T junction power combiner the 6th indirect heating type microwave power sensing is connect
Device；It is achieved thereby that to microwave signal power, phase place, frequency detection.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
Into；Co-planar waveguide is produced on SiO2On layer, anchor area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky
Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
Beneficial effect：
1) clamped beam T junction indirect heating type microwave signal detector of the invention is by the power of microwave signal, phase place, frequency
Three kinds of rate is surveyed module and is integrated together, and input signal is coupled to different inspections using the clamped beam of six port clamped beam couplers
Brake module, realizes power, phase place, the detection of frequency three kind microwave parameter, tool of the chip simultaneously to microwave signal
There are low-power consumption, the benefit of low cost；
2) clamped beam T junction indirect heating type microwave signal detector application indirect heating type microwave power of the invention is passed
Sensor detects the power of microwave signal, with preferable microwave property and without DC power；
3) clamped beam T junction indirect heating type microwave signal detector of the invention is realized to microwave signal using T junction
Power combing and distribution, it is to avoid shadow of the processing of isolation resistance to microwave property in traditional Wilkinson power dividers
Ring；
4) two T junction power combiners of microwave phase detector module application in the present invention, a T junction power distribution
Device and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Description of the drawings
Fig. 1 is clamped beam T junction indirect heating type microwave signal detector concept block diagram of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figures of the port clamped beam couplers of Fig. 2 six,
Fig. 4 is the top view of channel selector switch,
Fig. 5 is AA ' the directional profile figures of Fig. 4 channel selector switch,
Fig. 6 is the top view of T junction power divider/synthesizer,
Fig. 7 is the top view of indirect heating type microwave power detector,
Fig. 8 is AA ' the directional profile figures of Fig. 7 indirect heating type microwave power detectors.
Figure includes：Six port clamped beam couplers 1, channel selector switch 2, microwave frequency detector 3, microwave phase inspection
Survey device 4, first indirect heating type microwave power detector 5-1 the second indirect heating type microwave power detector 5-2, the 3rd is indirect
Heated microwave power sensor 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirectly heat type micro-wave work(
The T junction power combiner 6-1 of rate sensor 5-5, the 6th indirect heating type microwave power detector 5-6, first, the second T junction
Power combiner 6-2, the 3rd T junction power combiner 6-3, T junction power divider 7, Si substrates 8, SiO2Layer 9, coplanar ripple
Lead 10, anchor area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16, terminal resistance 17, P-type semiconductor
Arm 18, N-type semiconductor arm 19, output electrode 20, hot junction 21, cold end 22, substrate film structure 23, pull-down electrode 24, first end
Mouth 1-1, second port 1-2, the 3rd port 1-3, the 4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-
1, the 8th port 2-2, the 9th port 2-3, the tenth port 2-4, the tenth Single port 6-1, the tenth Two-port netwerk 6-2, the 13rd port
6-3。
Specific embodiment
Clamped beam T junction indirect heating type microwave signal detector of the present invention is by six port clamped beam couplers 1, passage choosing
Switch 2 is selected, microwave frequency detector 3, the cascade of microwave phase detector device 4 is constituted；Six port clamped beam couplers 1 are by co-planar waveguide
10, dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, the anchor area 11 of clamped beam 13
It is produced on co-planar waveguide 10, the lower section deposition of clamped beam 13 has dielectric layer 12, and collectively forms with air layer 15, clamped beam 13
Coupled capacitor structure, the length of co-planar waveguide 10 between two clamped beams 13 is λ/4；Channel selector switch 2 by co-planar waveguide 10,
Anchor area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26 is constituted；The anchor area 11 of cantilever beam 14 is produced on co-planar waveguide 10, is hanged
The lower section of arm beam 14 makes pull-down electrode 24, and collectively forms construction of switch with the upper dielectric layer 12 of pull-down electrode 24；Microwave frequency
Detector 3 is made up of the 3rd T junction power combiner 6-3 and the 6th indirect heating type microwave power detector 5-6 cascades；Microwave
Phase detectors 4 by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type microwave power detector 5-5,
First T junction power combiner 6-1, the second T junction power combiner 6-2, T junction power divider 7 is constituted；T junction power
Synthesizer, the topological structure of T junction power divider is identical, is made up of co-planar waveguide 10 and air bridges 15, and signal is from the 11st
6-1 inputs in port are T junction power divider 7, and signal is T junction work(from the tenth Two-port netwerk 6-2, the 13rd port 6-3 inputs
Rate synthesizer；
First port 1-1 of six port clamped beam couplers 1 is to the 3rd port 1-3, the 4th port 1-4 and first port 1-
1 is identical to fifth port 1-5, the power degree of coupling of the 6th port 1-6 difference；The port clamped beam couplers 1 of measured signal Jing six
First port 1-1 input, and by second port 1-2 export to the first indirect heating type microwave power detector 5-1, by the 4th
Port 1-4 and the 6th port 1-6 outputs to microwave phase detector device 4, by the 3rd port 1-3 and the output of fifth port 1-5 to leading to
Road selecting switch 2；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 connect respectively the second indirectly heat type micro-wave work(
Rate sensor 5-2 and the 3rd indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selector switch 2 and the tenth
Port 2-4 connects microwave frequency detector 3；Realize power, phase place, the three kinds of microwaves of frequency of a chip simultaneously to microwave signal
The detection of parameter, the benefit with low-power consumption, low cost.Its microwave power, phase place, the Cleaning Principle of frequency can be explained such as
Under：
Power detection：As shown in Figure 7 microwave power is input into from input port, and by co-planar waveguide 10 terminal resistance is input to
17 are converted to heat；P-type semiconductor arm 18 and N-type semiconductor arm 19 constitute thermocouple, and thermocouple is near the area of terminal resistance 17
Used as hot junction 21, thermocouple is near the region of output electrode 20 as cold end 22 in domain；According to Seebeck effects, by measuring output
The thermoelectrical potential of electrode 20 understands input microwave power size；Substrate thinning is constituted substrate film structure by the back of pyrometer fire-end 21
23 to improve detection sensitivity.
Frequency detecting：As shown in Figure 1 the 3rd port 1-3 of the port clamped beam coupler 1 of microwave signal Jing six and the 5th end
Mouth 1-5 outputs are to channel selector switch 2；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 are connect respectively between second
Meet heated microwave power sensor 5-2 and the 3rd indirect heating type microwave power detector 5-3, the of channel selector switch 2
Nine port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selector switch 2 is grounded, pull-down electrode
24 connect driving voltage, and when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and passage is strobed；When passage choosing
The port 7 and port 8 of switch 2 are selected when being strobed, the output coupling power P of six port clamped beam couplers 1 can be tested out3With
P5.The length of co-planar waveguide 10 between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, now port 3 and port
5 phase difference is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for being input into microwave signal, and c is the light velocity, εerIt is only relevant with structure for effective dielectric constant.Work as channel selecting
When the 9th port 2-3 and the tenth port 2-4 of switch 2 is strobed, two way microwave signals are carried out through T junction power combiner 5
Power combing, and detect composite signal power P using indirect heating type microwave power detector 5sSize, can according to formula (2)
Draw the frequency of input microwave signal.
P3, P5For the power that the 3rd port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power
Sensor 5-2 and the 3rd indirect heating type microwave power detector 5-3 detections are obtained.
Phase detectors：As shown in Figure 1 the 4th port 1-4 and the 6th of the port clamped beam coupler 1 of microwave signal Jing six
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between the length of co-planar waveguide 10 be λ/4, now by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
For 90 °；Input power Pr, the reference signal of f (microwave frequency detector 3 is measured) identical with measured signal frequency, reference signal
Jing T junctions power divider 7 is divided into two-way power and phase place identical signal, two with the 4th port 1-4 and the 6th port 1-6
Road measured signal Jing the first T junction power combiner 6-1 and the second T junction power combiner 6-2 carry out power combing；Between 4th
After heated microwave power sensor 5-4 and the 5th indirect heating type microwave power detector 5-5 are met to the synthesis of left and right two-way
Power Pcs1, Pcs2Detected, and the phase difference and reference signal between to be measured is drawn by formula (3)
P4, P6For the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
The preparation method of clamped beam T junction indirect heating type microwave signal detector includes following step：
1) 4 inches of high resistant Si substrates 8 are prepared, resistivity is 4000 Ω cm, and thickness is 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 9；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, and thickness is 0.4mm；
4) one layer of photoresist and photoetching are coated, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and note
Enter phosphorus (P) ion, doping content is 1015cm-2, form terminal resistance 17；
5) one layer of photoresist is coated, uses P+Photolithography plate carries out photoetching, in addition to the region of P-type semiconductor arm 18, other regions
Glue protection is photo-etched, boron (B) ion is then poured into, doping content is 1016cm-2, form the P-type semiconductor arm 18 of thermocouple；
6) one layer of photoresist is coated, uses N+Photolithography plate carries out photoetching, in addition to the region of N-type semiconductor arm 19, other regions
Glue protection is photo-etched, phosphorus (P) ion is then poured into, doping content is 1016cm-2, form the N-type semiconductor arm 19 of thermocouple；
7) one layer of photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) one layer of photoresist is coated, photoetching removes co-planar waveguide 10, metal interconnecting wires output electrode 20 and pull-down electrode
Photoresist at 24；
9) electron beam evaporation (EBE) forms ground floor gold (Au), and thickness is 0.3mm, removes on photoresist and photoresist
Au, stripping forms ground floor Au, output electrode 20, thermoelectric pile metal interconnecting wires and the pull-down electrode 24 of co-planar waveguide 10；
10) (LPCVD) one layer of Si is deposited3N4, thickness is 0.1mm；
11) one layer of photoresist is coated, photoetching simultaneously retains clamped beam 13 and the photoresist below cantilever beam 14, dry etching
Si3N4, form dielectric layer 12；
12) the layer of air layer 15 of uniform coating one and litho pattern, thickness is 2mm, under retaining clamped beam 13 and cantilever beam 14
The polyimides of side is used as sacrifice layer；
13) photoresist is coated, photoetching removes clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide 10, pull-down electrode 24
And the photoresist of the position of output electrode 20；
14) Seed Layer of the Ti/Au/Ti of A ° of evaporation 500/1500/300, re-plating thick layer after the Ti layers at the top of removal
Spend the Au layers for 2mm；
15) photoresist and the Au on photoresist are removed, clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide is formed
10th, pull-down electrode 24 and output electrode 22；
16) deep reaction ion etching (DRIE) the backing material back side, makes membrane structure 23；
17) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, volatilizees under normal temperature, dries.
Difference with the prior art of the present invention is：
Six port clamped beam coupled structures of novelty are present invention employs, this clamped beam coupled structure is from co-planar waveguide
A part is coupled out in the microwave signal of transmission, and power, frequency and the phase of microwave signal are detected using the signal being coupled out
Position size；Realized to the power combing of microwave signal and distribution using T junction, it is to avoid traditional Wilkinson power dividers
Impact of the processing of middle isolation resistance to microwave property；Microwave signal is detected using indirect heating type microwave power detector
Power, with preferable microwave property and without DC power；The clamped beam T junction indirect heating type microwave signal detection of the present invention
Device realize power of the chip simultaneously to microwave signal, phase place, the detection of three kinds of microwave parameters of frequency, with low-power consumption,
The benefit of low cost.
The structure for meeting conditions above is considered as the clamped beam T junction indirect heating type microwave signal detector of the present invention.
Claims (3)
1. a kind of clamped beam T junction indirect heating type microwave signal detector, it is characterised in that the phase detectors are by six ports
Clamped beam coupler (1), channel selector switch (2), microwave frequency detector (3), microwave phase detector device (4) cascade is constituted；
Wherein, the first port (1-1) of six ports clamped beam coupler (1) is to the 3rd port (1-3), the 4th port (1-4) and
Single port (1-1) is identical to fifth port (1-5), the power degree of coupling of the 6th port (1-6), measured signal Jing first ports
(1-1) it is input into, is exported to the first indirect heating type microwave power detector (5-1) by second port (1-2), by the 4th port
(1-4) with the first T junction power combiner (6-1) and the 2nd T of the 6th port (1-6) output to microwave phase detector device (4)
Type knot power combiner (6-2), and connect by the first T junction power combiner (6-1) and the second T junction power combiner (6-2)
4th indirect heating type microwave power detector (5-4) and the 5th connects heated microwave power sensor (5-5)；By the 3rd port
(1-3) export to channel selector switch (2) with fifth port (1-5)；7th port (2-1) of channel selector switch (2) and
Eight ports (2-2) connect respectively the second indirect heating type microwave power detector (5-2) and the 3rd indirect heating type microwave power is passed
Sensor (5-3), the 9th port (2-3) of channel selector switch (2) and the tenth port (2-4) connect microwave frequency detector (3)
3rd T junction power combiner (6-3), connects the 6th indirect heating type microwave power and passes by the 3rd T junction power combiner (6-3)
Sensor (5-6)；It is achieved thereby that to microwave signal power, phase place, frequency detection；
Wherein, six ports clamped beam coupler (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchor area (11) are produced on co-planar waveguide (10)
On, the lower section metallization medium layer (12) of clamped beam (13), and collectively form coupled capacitor knot with air layer (15), clamped beam (13)
Structure, co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. clamped beam T junction indirect heating type microwave signal detector as described in claim 1, it is characterised in that passage is selected
Switch (2) is selected by co-planar waveguide (10), anchor area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (24) is constituted；Cantilever
The anchor area (11) of beam (14) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (24), and with
Pulling electrode (24) upper dielectric layer (12) collectively forms construction of switch；Cantilever beam (14) ground connection of channel selector switch (2) is drop-down
Electrode (24) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and passage is strobed.
3. the clamped beam T junction indirect heating type microwave signal detector as described in claim 1,2, it is characterised in that indirectly plus
Hot type microwave work(sensor (5) is by Si substrates (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (17), P-type semiconductor
Arm (18), N-type semiconductor arm (19), output electrode (20) is constituted；Microwave power is input to terminal electricity by co-planar waveguide (10)
Resistance (17) is converted to heat；P-type semiconductor arm (18) and N-type semiconductor arm (19) constitute thermocouple；Imitated according to Seebeck
Should, understand input microwave power size by measuring the thermoelectrical potential of output electrode (20).
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| CN201710052668.4A CN106645920B (en) | 2017-01-24 | 2017-01-24 | Clamped beam T junction indirect heating type microwave signal detector |
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| CN201710052668.4A CN106645920B (en) | 2017-01-24 | 2017-01-24 | Clamped beam T junction indirect heating type microwave signal detector |
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Cited By (1)
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| CN110632671A (en) * | 2019-09-20 | 2019-12-31 | 西南大学 | Microwave detector and system based on metal medium metal waveguide |
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