CN103116073B - Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof - Google Patents
Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof Download PDFInfo
- Publication number
- CN103116073B CN103116073B CN201310028471.9A CN201310028471A CN103116073B CN 103116073 B CN103116073 B CN 103116073B CN 201310028471 A CN201310028471 A CN 201310028471A CN 103116073 B CN103116073 B CN 103116073B
- Authority
- CN
- China
- Prior art keywords
- microwave
- mems
- signal
- direct
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a cantilever beam and direct-type power sensor based microwave detecting system and a detecting method thereof. The detecting system comprises an MEMS (micro-electromechanical system) reconfigurable antenna, an MEMS adjustable filter, a control circuit and a microwave detector, the microwave detector is manufactured on a GaAs substrate and comprises a CPW (coplanar waveguide) transmission line, four structurally identical MEMS cantilever beam structures, a power combiner and four structurally identical MEMS direct-type microwave power sensors. The cantilever beam and direct-type power sensor based microwave detecting system has the advantages of novel structure and small size, can achieve integration of microwave signal frequency and power detection, and can be compatible with a GaAs monolithic microwave integrated circuit.
Description
Technical field
The invention belongs to microelectromechanical systems MEMS technology field, is a kind of online microwave frequency detector based on semi-girder and direct-type power sensor and detection method thereof.
Background technology
Along with the fast development of science and technology, the research of microwave technology is more and more deep, thus the power of microwave signal and the detection of these two important parameters of frequency also essential.The detecting device of microwave signal frequency and power has application widely in military affairs, business and scientific research etc.Current microwave frequency detection technique is mainly based on process of heterodyning, counting method, phase comparing method and resonance method principle, and microwave power detection technology is mainly based on the method for diode, thermopair and thermistor.But these methods are all discrete, this just brings a unavoidable defect: the system integration that cannot realize frequency detecting and power detection.Along with the development of science and technology, the requirement of modern PCS Personal Communications System and radar system is more and more higher: low-power consumption, miniaturization and can become new trend by single chip integrated microwave frequency detector.In recent years, along with MEMS technology is in the extensive utilization in radar communication field, and deepening continuously to MEMS cantilever beam structure and the research of MEMS direct-type microwave power detector, make to become possibility based on semi-girder and the microwave frequency of direct-type power sensor and the system integration of power detection.
Summary of the invention
The problem to be solved in the present invention is: existing microwave signal detects cannot system integration frequency detecting and power detection, and user needs simple structure, less volume and can microwave frequency, the power detector of on-line checkingi.
Technical scheme of the present invention is: based on the microwave detection system of semi-girder and direct-type power sensor, described microwave detection system comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, MEMS reconfigurable antenna receives microwave signal, after MEMS adjustable filter, obtain microwave signal to be measured input microwave detector, control circuit connects MEMS reconfigurable antenna and MEMS adjustable filter respectively
Described microwave detector is provided with measured signal transmission line on gaas substrates, four identical MEMS cantilever beam structures of structure, a merit closes device and four structure identical MEMS direct-type microwave power detectors, measured signal transmission line is CPW transmission line, described CPW transmission line is made up of signal wire and ground wire, microwave signal to be measured inputs a MEMS direct-type microwave power detector by measured signal transmission line, it is two right that four MEMS cantilever beam structures are divided into, symmetry is suspended from above the signal wire of measured signal transmission line, two, the signal wire the same side MEMS cantilever beam structure being wherein positioned at measured signal transmission line connects a MEMS direct-type microwave power detector respectively, two MEMS cantilever beam structures of opposite side symmetry are connected to merit respectively and close device, the output terminal that merit closes device connects a MEMS direct-type microwave power detector.
As preferably, microwave detector along measured signal transmission line direction, centered by the distance L between two pairs of MEMS cantilever beam structures wavelength corresponding to Frequency point 1/4, described center frequency points refers to the center frequency points of the frequency detection range of described microwave frequency detector.
MEMS cantilever beam structure and the merit of microwave detector are closed between device and MEMS direct-type microwave power detector and are connected by CPW transmission line, and merit is closed device and is connected by CPW transmission line with between MEMS direct-type microwave power detector; Cantilever beam structure comprises semi-girder and anchor district, is provided with insulating medium layer between the signal wire of the measured signal transmission line of semi-girder and below.
The merit of microwave detector is closed device and is comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, and it is asymmetric coplanar stripline ACPS signal wire that merit is closed between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
A detection method for the above-mentioned microwave detection system based on semi-girder and direct-type power sensor, receives microwave signal by MEMS reconfigurable antenna, after MEMS adjustable filter, obtains microwave signal to be measured, in input microwave detector; In microwave detector, microwave signal to be measured, through measured signal transmission line, is transferred to the MEMS direct-type microwave power detector being positioned at measured signal line end, detects the power P of microwave signal to be measured; Microwave signal to be measured from measured signal transmission line through out-of-date, two the MEMS cantilever beam structures being positioned at signal wire the same side of measured signal transmission line are coupled out the microwave signal that two amplitudes are equal, there is certain phase differential online, input a MEMS direct-type microwave power detector respectively, measure the microwave signal power P be coupled out separately by cantilever beam structure
1, P
2; Two the MEMS cantilever beam structures being positioned at described signal wire opposite side are coupled out two same microwave signals online, and input work is closed device and carried out Vector modulation, then inputs a MEMS direct-type microwave power detector, measures by the power P of composite signal
3; There is a phase differential be directly proportional to microwave signal frequency to be measured in described two microwave signals
merit closes the power P of the composite signal of device
3with this phase differential
there is the relation of a cosine function,
The power P of the microwave signal that four MEMS direct-type microwave power detectors detect the power P of microwave signal to be measured based on Seebeck principle, MEMS semi-girder is coupled out
1, P
2and merit closes the power P of device composite signal
3size, and with DC voltage form V, V
1, V
2and V
3export measurement result, based on formula (1), the frequency of microwave signal to be measured is:
Wherein, c is the light velocity, ε
erfor the effective dielectric constant of CPW transmission line.
Further, the voltage in MEMS reconfigurable antenna and MEMS adjustable filter on drive electrode is changed by control circuit, thus adjustment MEMS reconfigurable antenna and the centre frequency of MEMS adjustable filter, to realize the detection of microwave signal frequency in a certain characteristic frequency situation and power.
The invention provides a kind of microwave frequency based on semi-girder and direct-type power sensor and power detecting system, the microwave signal received by MEMS reconfigurable antenna, after MEMS adjustable filter, again through one section of CPW transmission line, be transferred to the MEMS direct-type microwave power detector being positioned at CPW line end, the power of microwave signal can be detected.To be positioned at above CPW transmission line and four structure identical MEMS semi-girders are in a distance coupled out the microwave signal that the two pairs of amplitudes are equal, there is a phase differential online, the supported signal getting wherein every centering closes device through merit and carries out Vector modulation, is detected the watt level of the rear microwave signal of synthesis and other two microwave signals by MEMS direct-type microwave power detector.According to the size of the DC voltage exported, infer the frequency of measured signal.The voltage on drive electrode can be changed, thus adjustment MEMS reconfigurable antenna and the centre frequency of MEMS adjustable filter, to realize the detection of microwave signal frequency in a certain characteristic frequency situation and power by control circuit.
Microwave frequency based on semi-girder and direct-type power sensor of the present invention and power detecting system not only have novel structure, be easy to the advantage measured, and it is integrated to realize microwave signal frequency and power detection, and compatible with GaAs monolithic integrated microwave circuit.
Accompanying drawing explanation
Fig. 1 the present invention is based on the microwave frequency of semi-girder and direct-type power sensor and the structural representation of power detecting system.
Fig. 2 is the A-A' sectional view in Fig. 1.
Fig. 3 is the B-B' sectional view in Fig. 1.
Embodiment
As Fig. 1, the present invention includes MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, MEMS reconfigurable antenna receives microwave signal, after MEMS adjustable filter, obtain microwave signal to be measured input microwave detector, control circuit connects MEMS reconfigurable antenna and MEMS adjustable filter respectively.The present invention is produced on GaAs substrate 1, and microwave detector comprises co-planar waveguide CPW transmission line, four structure identical MEMS cantilever beam structures, merits close device and four structure identical MEMS direct-type microwave power detectors.CPW transmission line is as the signal transmssion line of frequency detector of the present invention, for the transmission of microwave signal to be measured, and MEMS cantilever beam structure, merit close the transmission of signal between device and MEMS direct-type microwave power detector, CPW transmission line is made up of signal wire and ground wire.
In microwave detector, four identical MEMS semi-girders of structure are positioned at the top of the insulating medium layer 6 on the signal wire 2 of measured signal transmission line.When microwave signal to be measured is through measured signal transmission line, two amplitudes are coupled out identical but there is the microwave signal of certain phase differential along two cantilever beam structures that measured signal transmission line is separated by a distance, closing device Vector modulation through merit again, there is cosine function relationship in power and the microwave signal phase difference to be measured of composite signal.In order to measure the size of the microwave signal power be coupled out by cantilever beam structure, two identical cantilever beam structures of structure are devised symmetrically at the opposite side of the signal wire of measured signal transmission line, thereafter be connected to MEMS direct-type microwave power detector respectively, measure the signal power that cantilever beam structure is coupled out.Utilize direct-type microwave power detector to detect the size of synthesis power, detect while finally realizing microwave signal frequency to be measured and power.
The specific embodiments of detection system of the present invention is as follows:
As Fig. 1-3, the present invention is arranged on GaAs substrate 1, comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, microwave detector comprises CPW signal wire 2, ground wire 3, MEMS semi-girder 4, anchor district 5, insulating medium layer 6, power splitter isolation resistance 7, ACPS signal wire 8, semiconductor thermocouple arm 9, tantalum nitride resistance 10, direct current IOB 11 and isolated DC capacitor 12.Gallium arsenide substrate 1 is provided with MEMS reconfigurable antenna, MEMS adjustable filter, control circuit, co-planar waveguide CPW transmission line, four identical MEMS semi-girders, merits conjunction device and four MEMS direct-type microwave power detectors.
MEMS reconfigurable antenna and MEMS adjustable filter are prior art, no longer describe in detail.
In microwave detector, CPW transmission line comprises signal wire 2 and ground wire 3.Measured signal transmission line adopts CPW transmission line, the microwave signal to be measured received by MEMS reconfigurable antenna is after MEMS adjustable filter, CPW transmission line is entered from the input end of measured signal transmission line, export a MEMS direct-type microwave power detector to by output terminal again, detect the power obtaining microwave signal to be measured.
MEMS cantilever beam structure comprises semi-girder 4 and anchor district 5.Along measured signal transmission line, the top of insulating medium layer 6 on the signal wire 2 that the semi-girder 4 of two couples of L is in a distance suspended from measured signal transmission line, as preferably, centered by distance L wavelength corresponding to Frequency point 1/4, described center frequency points refers to the center frequency points of the frequency detection range of described microwave frequency detector.When measured signal from the signal wire of measured signal transmission line through out-of-date, four structure identical MEMS semi-girders 4 are coupled out the microwave signal that the two pairs of amplitudes are equal, there is certain phase differential online, and an input work of getting in often pair of microwave signal closes device Vector modulation.In order to measure the microwave signal power be coupled out by semi-girder 4, another in often pair of microwave signal connects a MEMS direct-type microwave power detector respectively.
Merit is closed device and is comprised asymmetric coplanar stripline ACPS signal wire 8, ground wire 3 and isolation resistance 7.The effect that merit closes device is two the microwave signal Vector modulation be coupled out by MEMS cantilever beam structure.When microwave signal to be measured passes through the signal wire of measured signal transmission line, because two semi-girders of the same side on signal wire have certain distance L, there is a phase differential be directly proportional to microwave signal frequency to be measured in two microwave signals be coupled out, described phase differential be that L is corresponding, when L fixes, phase differential is a definite value, and merit closes the power P of the composite signal that device exports
3the relation of a cosine function is there is with this phase differential:
Wherein, P
1, P
2be respectively the power of the microwave signal that the MEMS semi-girder being positioned at the same side on signal wire is coupled out.Therefore the power that MEMS direct-type microwave power detector obtains is corresponding with microwave signal to be measured.
MEMS direct-type microwave power detector comprises semiconductor thermocouple arm 9, tantalum nitride resistance 10, direct current IOB 11 and isolated DC capacitor 12.The power P of the microwave signal that four MEMS direct-type microwave power detectors detect the power P of microwave signal to be measured based on Seebeck principle, MEMS semi-girder is coupled out
1, P
2and merit closes the power P of device composite signal
3size, and with DC voltage form V, V
1, V
2and V
3export measurement result, based on formula (1), the frequency of microwave signal to be measured is:
Wherein, c is the light velocity, ε
erfor the effective dielectric constant of CPW transmission line.
Further, the voltage in MEMS reconfigurable antenna and MEMS adjustable filter on drive electrode is changed by control circuit, thus adjustment MEMS reconfigurable antenna and the centre frequency of MEMS adjustable filter, to realize the detection of microwave signal frequency in a certain characteristic frequency situation and power.
The preparation method that the present invention is based on the online microwave frequency detector of semi-girder and direct-type power sensor is:
1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of gallium arsenide is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
2) photoetching isolate the N of extension
+gallium arsenide, forms the figure of the semiconductor thermocouple arm of thermoelectric pile;
3) N is anti-carved
+gallium arsenide, forming its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
4) photoetching: remove the photoresist that will retain tantalum nitride place;
5) sputter tantalum nitride, its thickness is 1 μm;
6) peel off;
7) photoetching: remove the photoresist that will retain the place of ground floor gold;
8) evaporate ground floor gold, its thickness is 0.3 μm;
9) peel off, form CPW signal wire and ground wire, the anchor district of MEMS semi-girder;
10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
11) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
12) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on CPW signal wire below MEMS semi-girder, and MEMS direct-type microwave power detector completely cuts off the dielectric nitridation silicon of DC capacitor;
13) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS semi-girder and the distance below it on main line CPW between silicon nitride medium layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below semi-girder;
14) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
15) photoetching: remove and will electroplate local photoresist;
16) electrogilding, its thickness is 2 μm;
17) photoresist is removed: remove and do not need to electroplate local photoresist;
18) anti-carve titanium/gold/titanium, corrosion down payment, forms CPW signal wire, ground wire, MEMS semi-girder, direct current IOB;
19) by this gallium arsenide substrate thinning back side to 100 μm;
20) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS semi-girder, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Above-mentioned steps adopts the processes well known in MEMS technology, no longer describes in detail.
Whether distinguish is that the standard of structure of the present invention is as follows:
The online microwave frequency detector detection system of microelectron-mechanical of the present invention comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, and microwave detector comprises four identical MEMS cantilever beam structures and four identical MEMS direct-type microwave power detectors.The microwave signal received by MEMS reconfigurable antenna, after MEMS adjustable filter, then through one section of CPW transmission line, is transferred to the MEMS direct-type microwave power detector being positioned at CPW line end, can detects the power of microwave signal.When microwave signal to be measured is through CPW transmission line, to be positioned at above CPW transmission line the microwave signal that the two pairs of amplitudes and four structure identical MEMS semi-girders are in a distance coupled out online are equal, there is a phase differential, the supported signal getting wherein every centering closes device through merit and carries out Vector modulation, detected the power of the rear microwave signal of synthesis by MEMS direct-type microwave power detector, the power of other two supported signals is detected by MEMS direct-type microwave power detector simultaneously respectively.By detecting the size of the DC voltage exported, thus inferring the frequency of measured signal, realizing the detection of microwave signal frequency to be measured and power.The voltage on drive electrode can be changed, thus adjustment MEMS reconfigurable antenna and the centre frequency of MEMS adjustable filter, to realize the detection of microwave signal frequency in a certain characteristic frequency situation and power by control circuit.
Namely the structure meeting above condition is considered as the online microwave frequency detector based on semi-girder and direct-type power sensor of the present invention and detection method.
Claims (7)
1. based on the microwave detection system of semi-girder and direct-type power sensor, it is characterized in that described microwave detection system comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, MEMS reconfigurable antenna receives microwave signal, after MEMS adjustable filter, obtain microwave signal to be measured input microwave detector, control circuit connects MEMS reconfigurable antenna and MEMS adjustable filter respectively
Described microwave detector is provided with measured signal transmission line on gaas substrates, four identical MEMS cantilever beam structures of structure, a merit closes device and four structure identical MEMS direct-type microwave power detectors, measured signal transmission line is CPW transmission line, described CPW transmission line is made up of signal wire and ground wire, microwave signal to be measured inputs a MEMS direct-type microwave power detector by measured signal transmission line, it is two right that four MEMS cantilever beam structures are divided into, symmetry is suspended from above the signal wire of measured signal transmission line, two, the signal wire the same side MEMS cantilever beam structure being wherein positioned at measured signal transmission line connects a MEMS direct-type microwave power detector respectively, two MEMS cantilever beam structures of opposite side symmetry are connected to merit respectively and close device, the output terminal that merit closes device connects a MEMS direct-type microwave power detector.
2. the microwave detection system based on semi-girder and direct-type power sensor according to claim 1, it is characterized in that microwave detector is along measured signal transmission line direction, centered by distance L between two pairs of MEMS cantilever beam structures wavelength corresponding to Frequency point 1/4, described center frequency points refers to the center frequency points of the frequency detection range of microwave frequency detector.
3. the microwave detection system based on semi-girder and direct-type power sensor according to claim 1 and 2, it is characterized in that the MEMS cantilever beam structure of microwave detector and merit are closed between device and MEMS direct-type microwave power detector to be connected by CPW transmission line, merit is closed device and is connected by CPW transmission line with between MEMS direct-type microwave power detector; Cantilever beam structure comprises semi-girder and anchor district, is provided with insulating medium layer between the signal wire of the measured signal transmission line of semi-girder and below.
4. the microwave detection system based on semi-girder and direct-type power sensor according to claim 1 and 2, it is characterized in that the merit of microwave detector is closed device and comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, it is asymmetric coplanar stripline ACPS signal wire that merit is closed between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
5. the microwave detection system based on semi-girder and direct-type power sensor according to claim 3, it is characterized in that the merit of microwave detector is closed device and comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, it is asymmetric coplanar stripline ACPS signal wire that merit is closed between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
6. the detection method of the microwave detection system based on semi-girder and direct-type power sensor described in an any one of claim 1-5, it is characterized in that receiving microwave signal by MEMS reconfigurable antenna, microwave signal to be measured is obtained, in input microwave detector after MEMS adjustable filter; In microwave detector, microwave signal to be measured, through measured signal transmission line, is transferred to the MEMS direct-type microwave power detector being positioned at measured signal line end, detects the power P of microwave signal to be measured; Microwave signal to be measured from measured signal transmission line through out-of-date, two the MEMS cantilever beam structures being positioned at signal wire the same side of measured signal transmission line are coupled out the microwave signal that two amplitudes are equal, there is certain phase differential online, input a MEMS direct-type microwave power detector respectively, measure the microwave signal power P be coupled out separately by cantilever beam structure
1, P
2; Two the MEMS cantilever beam structures being positioned at described signal wire opposite side are coupled out two same microwave signals online, and input work is closed device and carried out Vector modulation, then inputs a MEMS direct-type microwave power detector, measures the power P of composite signal
3; There is a phase differential be directly proportional to microwave signal frequency to be measured in described two microwave signals
merit closes the power P of the composite signal of device
3with this phase differential
there is the relation of a cosine function,
The power P of the microwave signal that four MEMS direct-type microwave power detectors detect the power P of microwave signal to be measured based on Seebeck principle, MEMS semi-girder is coupled out
1, P
2and merit closes the power P of device composite signal
3size, and with DC voltage form V, V
1, V
2and V
3export measurement result, based on formula (1), the frequency of microwave signal to be measured is:
Wherein, c is the light velocity, ε
erfor the effective dielectric constant of CPW transmission line, L is the distance between two semi-girders of the same side on signal wire.
7. the detection method of the microwave detection system based on semi-girder and direct-type power sensor according to claim 6, it is characterized in that by the voltage on drive electrode in control circuit change MEMS reconfigurable antenna and MEMS adjustable filter, thus adjustment MEMS reconfigurable antenna and the centre frequency of MEMS adjustable filter, to realize the detection of microwave signal frequency in a certain characteristic frequency situation and power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310028471.9A CN103116073B (en) | 2013-01-18 | 2013-01-18 | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310028471.9A CN103116073B (en) | 2013-01-18 | 2013-01-18 | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103116073A CN103116073A (en) | 2013-05-22 |
| CN103116073B true CN103116073B (en) | 2015-06-10 |
Family
ID=48414498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310028471.9A Expired - Fee Related CN103116073B (en) | 2013-01-18 | 2013-01-18 | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103116073B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103344831B (en) * | 2013-06-19 | 2015-04-29 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103401067B (en) * | 2013-08-08 | 2015-02-18 | 电子科技大学 | Eight-frequency band reconfigurable intelligent mobile phone antenna |
| CN106199173A (en) * | 2016-07-19 | 2016-12-07 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure and method |
| CN106841783B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | Silicon substrate cantilever beam T junction indirect heating type unknown frequency millimeter wave phase detectors |
| CN106841802B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Based on the online millimeter wave phase detectors of silicon substrate cantilever beam T junction indirect heating |
| CN106841797B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula T junction direct-type millimeter wave phase detectors |
| CN106771604B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate given frequency slot-coupled formula T junction indirect type millimeter wave phase detectors |
| CN106771601B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Silicon substrate cantilever beam T junction direct-heating type unknown frequency millimeter wave phase detectors |
| CN106841784B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon-base micro-mechanical cantilever beam couples the online millimeter wave phase detectors of indirect heating |
| CN106841791B (en) * | 2017-01-24 | 2019-01-25 | 东南大学 | Silicon substrate unknown frequency slot-coupled formula direct-type millimeter wave phase detectors |
| CN106841792B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Online microwave phase detector device and detection method based on cantilever beam |
| CN106841786B (en) * | 2017-01-24 | 2019-03-05 | 东南大学 | Based on silicon substrate cantilever beam T junction indirect heating type millimeter-wave signal detector |
| CN107659320A (en) * | 2017-08-15 | 2018-02-02 | 东南大学 | The cantilever beam receiver front end that internet of things oriented excess energy and release model are collected |
| CN107659281A (en) * | 2017-08-15 | 2018-02-02 | 东南大学 | The cantilever beam perseverance width device that the excess energy of the Autonomous test of internet of things oriented is collected |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463310A (en) * | 1991-11-25 | 1995-10-31 | Marconi Instruments Limited | Instrument for measuring the frequency and power of a microwave signal |
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN102176679A (en) * | 2011-01-07 | 2011-09-07 | 东南大学 | Reconfigurable microwave receiver front-end based on micro-electro-mechanical microwave power sensor |
| CN102175909A (en) * | 2011-03-08 | 2011-09-07 | 东南大学 | Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5698660A (en) * | 1980-01-09 | 1981-08-08 | Advantest Corp | Frequency measuring device |
| US20090201034A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
| CN102735925B (en) * | 2012-06-20 | 2014-05-07 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
| CN102735932B (en) * | 2012-06-20 | 2014-08-13 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
-
2013
- 2013-01-18 CN CN201310028471.9A patent/CN103116073B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463310A (en) * | 1991-11-25 | 1995-10-31 | Marconi Instruments Limited | Instrument for measuring the frequency and power of a microwave signal |
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101332971A (en) * | 2008-07-29 | 2008-12-31 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN102176679A (en) * | 2011-01-07 | 2011-09-07 | 东南大学 | Reconfigurable microwave receiver front-end based on micro-electro-mechanical microwave power sensor |
| CN102175909A (en) * | 2011-03-08 | 2011-09-07 | 东南大学 | Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| MEMS FREQUENCY DETECTOR AT X-BAND BASED ON MMIC TECHNOLOGY;Di Hua;《Solid-State Sensors,Actuators and Microsystems Conference》;20091231;第1405页右栏第2段至1406页右栏第3段 * |
| 一种新型MEMS微波功率传感器的设计与模拟;田涛;《传感技术学报》;20080430;第21卷(第4期);全文 * |
| 对称式微波功率传感器的设计;王德波;《光学精密工程》;20110131;第19卷(第1期);全文 * |
| 直接加热终端式MEMS微波功率传感器的设计与模拟;陈宁娟;《中国机械工程》;20050731;第16卷;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103116073A (en) | 2013-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103116073B (en) | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof | |
| CN103048540B (en) | Based on online microwave frequency detector and the detection method thereof of semi-girder and direct-type power sensor | |
| CN103105531B (en) | The online microwave frequency detector of microelectron-mechanical and detection method thereof | |
| CN103048536B (en) | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor | |
| CN103344831B (en) | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof | |
| CN101788605B (en) | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof | |
| CN103116067B (en) | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors | |
| CN203310915U (en) | Phase detector based on micro mechanical direct thermoelectric power sensor | |
| CN102243268B (en) | Micro-electro-mechanical directional coupling microwave power sensor and preparation method thereof | |
| CN103116070B (en) | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors | |
| CN103116071B (en) | Micro-electromechanical microwave frequency and power detecting system and detecting method thereof | |
| CN103364636B (en) | Micro-machinery cantilever capacitance type power sensor-based phase detector and manufacturing method of phase detector | |
| CN103116072B (en) | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system | |
| CN102411086A (en) | Five-port capacitance type microwave power sensor based on micro mechanical clamped beam | |
| CN103346785B (en) | Based on the phase-locked loop and preparation method thereof of micro-mechanical direct thermoelectric type power sensor | |
| CN103326668B (en) | Based on frequency multiplier and the preparation method of micromechanics clamped beam condenser type power sensor | |
| CN103344833B (en) | Phase detector based on micromachine indirect thermoelectric type power sensor and manufacturing method | |
| CN103336175B (en) | Phase detector based on micro-machinery clamped beam capacitance type power sensor and manufacture method thereof | |
| CN203310918U (en) | Phase detector based on micromechanical indirect thermoelectric power sensor | |
| CN203310916U (en) | Phase detector based on micromechanical cantilever capacitive power sensor | |
| CN106814260B (en) | The direct-type millimeter-wave signal detector of silicon substrate slot-coupled formula | |
| CN106841782B (en) | Silicon substrate cantilever beam couples direct-heating type unknown frequency millimeter wave phase detectors | |
| CN106814252A (en) | Online microwave phase detector device based on clamped beam | |
| CN203313160U (en) | Frequency divider based on micromechanical indirect thermoelectric power sensor | |
| CN106645924B (en) | Silicon substrate given frequency slot-coupled formula indirect type millimeter wave phase detectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20180118 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |