CN203313160U - Frequency divider based on micromechanical indirect thermoelectric power sensor - Google Patents
Frequency divider based on micromechanical indirect thermoelectric power sensor Download PDFInfo
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- CN203313160U CN203313160U CN2013203523632U CN201320352363U CN203313160U CN 203313160 U CN203313160 U CN 203313160U CN 2013203523632 U CN2013203523632 U CN 2013203523632U CN 201320352363 U CN201320352363 U CN 201320352363U CN 203313160 U CN203313160 U CN 203313160U
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- coplanar waveguide
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Abstract
The utility model discloses a frequency divider based on a micromechanical indirect thermoelectric power sensor. The frequency divider comprises a substrate which is made of gallium arsenide (GaAs), a power combiner, an MEMS indirect microwave power sensor, an external voltage controlled oscillator and an external multiplier, wherein the power combiner and the MEMS indirect microwave power sensor are arranged on the substrate. An output signal of the voltage controlled oscillator passes through the multiplier and then is fed back to an input end of the power combiner. A reference signal is applied to the other input end of the power combiner. Through the detection of the indirect thermoelectric power sensor, a voltage which is proportional to the phase difference between the reference signal and the output signal of the voltage controlled oscillator is acquired. The voltage is applied to the input end of the voltage controlled oscillator, so that the local oscillator signal frequency of the voltage controlled oscillator changes with the change of the input voltage. The frequency divider provided by the utility model has the advantages of simple structure, small volume, high precision and good practicality.
Description
Technical field
The utility model relates to the technical field of microelectromechanical systems (MEMS), especially relates to a kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics.
Background technology
Frequency divider (frequency divider) is that to make output signal frequency be the circuit of the whole approximate number of its incoming frequency.Frequency divider has application in various fields, as radio communication, radar, Digital Television, broadcast etc.The phase-locked loop frequency divider of current extensive employing has advantages of that precision is very high, and circuit structure is complicated, larger-size shortcoming but also have.Along with advancing by leaps and bounds of microelectric technique, new material, new technology, new technology continue to bring out, impel the requirement to electronic equipments such as wireless communication system and radar systems to improve constantly: simple structure, the divider circuit that less volume and precision are higher becomes a kind of trend.Current, the MEMS technology is developed rapidly, the research of thermoelectric (al) type power sensor reaches its maturity indirectly, and making becomes possibility based on the frequency divider of the indirect thermoelectric (al) type power sensor of micromechanics, therefore is necessary to design a kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics.
The utility model content
The deficiency existed for solving current frequency divider, the utility model proposes a kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics, and this fraction frequency device is simple, volume is less, precision is higher.
For achieving the above object, the utility model adopts following technical scheme:
A kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics, the merit that comprise substrate, is arranged on substrate is closed device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier, axis of symmetry of definition on substrate; Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire, coplanar waveguide transmission line, two sections asymmetric coplanar striplines, isolation resistance, two groups of clamped beam He Mao districts; The MEMS indirect-type microwave power sensor comprises two groups of terminal resistances, metal thermocouple arm, semiconductor thermocouple arm, metal connecting line and two direct current IOB.
Described ground wire forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires, symmetries are positioned at one section common ground on the axis of symmetry.
Described coplanar waveguide transmission line forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar stripline inputs respectively; Described two sections asymmetric coplanar stripline inputs are isolated by isolation resistance, described two sections asymmetric coplanar stripline outputs rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines and isolation resistance form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port.
Described two groups of clamped beams are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on the ground wire side ground wire and common ground that is positioned at the same side by the anchor district respectively.
Described output coplanar waveguide transmission line is connected by one group of terminal resistance with two sections side ground wires respectively, and described two groups of terminal resistances correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by the metal connecting line, and the other end is connected with the direct current IOB by the metal connecting line respectively; One of them direct current IOB is connected with the voltage controlled oscillator input, another direct current IOB ground connection; Described thermocouple is comprised of metal thermocouple arm and semiconductor thermocouple arm.
The output of described voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with the feedback signal input port.
The coplanar waveguide transmission line that merit is closed device clamped beam and below forms building-out capacitor, and the size of dwindling power splitter when the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency divider higher.The output signal of voltage controlled oscillator by a multiplier (* N) feed back to again the input that merit is closed device, reference signal is added in another input that merit is closed device, through thermoelectric (al) type power sensor detection indirectly, obtain and the proportional voltage of the phase difference of reference signal and voltage controlled oscillator output signal, this voltage is added to the input of voltage controlled oscillator, and the local oscillation signal frequency of voltage controlled oscillator is changed along with the variation of the voltage of inputting.It is the N/of reference signal that appropriate loop design, this variation can make the frequency of voltage controlled oscillator output signal.
Further, between described coplanar waveguide transmission line (3) and clamped beam (12), be provided with silicon nitride medium layer (11), it is upper that described silicon nitride medium layer (11) covers coplanar waveguide transmission line (3), and the coplanar waveguide transmission line that makes merit close device clamped beam and below forms building-out capacitor.
The utility model also proposes a kind of preparation method of the frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics, comprises following steps:
(1) make gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate the N of extension
+GaAs, figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: removal will retain the photoresist in tantalum nitride place;
(8) sputter tantalum nitride, its thickness are 1 μ m;
(9) peel off;
(10) photoetching: removal will retain the photoresist in the place of ground floor gold;
(11) evaporation ground floor gold, its thickness is 0.3 μ m;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam De Mao district, direct current IOB and metal connecting line;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(15) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride on MEMS clamped beam below coplanar waveguide transmission line (CPW);
(16) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below distance between the upper silicon nitride medium layer of main line coplanar waveguide transmission line (CPW); The photoetching polyimide sacrificial layer, only retain the sacrifice layer of clamped beam below;
(17) evaporation titanium/gold/titanium, its thickness is
: the down payment of evaporation for electroplating;
(18) photoetching: removal will be electroplated local photoresist;
(19) electrogilding, its thickness are 2 μ m;
(20) remove photoresist: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal connecting line;
(22) by this gallium arsenide substrate thinning back side to 100 μ m;
(23) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(24) external voltage controlled oscillator and multiplier.
Beneficial effect: (1) frequency divider of the present utility model, based on the indirect thermoelectric (al) type power sensor of micromechanics, has novel structure, the advantage that circuit size is little, and have higher precision; (2) frequency divider of the present utility model be easy to integrated, and with GaAs monolithic integrated microwave circuit compatibility; (3) merit in frequency divider of the present utility model is closed the coplanar waveguide transmission line formation building-out capacitor of device clamped beam and its below, the size of dwindling power splitter when the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency divider higher.
The accompanying drawing explanation
Fig. 1 is fraction frequency device vertical view of the present utility model;
Fig. 2 is the A-A' profile of Fig. 1;
Fig. 3 is the B-B' profile of Fig. 1;
Embodiment:
Below in conjunction with accompanying drawing, the utility model is done further and explained.
As shown in Figure 1, a kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics the utility model proposes, comprise that take GaAs (GaAs) closes device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier as the substrate 1 of material, the merit be arranged on substrate 1, axis of symmetry of definition on substrate 1, as shown in Figure 2.
Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire 2, coplanar waveguide transmission line 3, two sections asymmetric coplanar striplines 4, isolation resistance 5, two groups of clamped beam 12He Mao districts 13; The effect that merit is closed device be with reference to signal and through multiplier (* that N) signal of feedback control loop output carries out vector is synthetic.Carry out having a phase difference between two synthetic microwave signals of vector, there are the relation of a cosine function in the power of composite signal and this phase difference.
The MEMS indirect-type microwave power sensor comprises two groups of terminal resistances 6, metal thermocouple arm 7, semiconductor thermocouple arm 8, metal connecting line 9 and two direct current IOB 10; The MEMS indirect-type microwave power sensor detects the size of composite signal power based on the Seebeck principle, and exports with voltage form.
Ground wire 2 forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires, symmetries are positioned at one section common ground on the axis of symmetry;
Coplanar waveguide transmission line 3 forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar stripline 4 inputs respectively; Described two sections asymmetric coplanar stripline 4 inputs are by isolation resistance 5 isolation, described two sections asymmetric coplanar stripline 4 outputs rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines 4 and isolation resistance 5 form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port; As shown in Figure 3, be provided with silicon nitride medium layer 11 between described coplanar waveguide transmission line 3 and clamped beam 12, described silicon nitride medium layer 11 covers on coplanar waveguide transmission line 3, and the coplanar waveguide transmission line that makes merit close device clamped beam and below forms building-out capacitor.
Two groups of clamped beams 12 are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam 12 is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on the ground wire 2 side ground wires and common ground that are positioned at the same side by anchor district 13 respectively;
The output coplanar waveguide transmission line is connected by one group of terminal resistance 6 with two sections side ground wires respectively, and described two groups of terminal resistances 6 correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal connecting line 9, and the other end is connected with direct current IOB 10 by metal connecting line 9 respectively; One of them direct current IOB 10 is connected with the voltage controlled oscillator input, another direct current IOB 10 ground connection; Described thermocouple is comprised of metal thermocouple arm 7 and semiconductor thermocouple arm 8;
The output of voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with the feedback signal input port.Voltage controlled oscillator and multiplier can consist of the sheet external circuit.The output signal of voltage controlled oscillator by a multiplier (* N) feed back to again merit to close one of them input of device, reference signal is added in another input that merit is closed device, merit is closed device, and to carry out vector synthetic, the microwave signal power delivery obtained is to indirect thermoelectric (al) type power sensor, export the voltage that a phase difference with reference signal and voltage controlled oscillator output signal is ratio, this voltage is added to the input of voltage controlled oscillator, the local frequency of voltage controlled oscillator changes along with the variation of this input voltage, if loop design is proper, when loop-locking, the frequency of voltage controlled oscillator output signal is the N/of reference signal.
The utility model also provides a kind of preparation method of the frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics to be:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate the N of extension
+GaAs, figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: removal will retain the photoresist in tantalum nitride place;
(8) sputter tantalum nitride, its thickness are 1 μ m;
(9) peel off;
(10) photoetching: removal will retain the photoresist in the place of ground floor gold;
(11) evaporation ground floor gold, its thickness is 0.3 μ m;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam De Mao district, direct current IOB and metal connecting line;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Thick silicon nitride medium layer;
(15) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride on MEMS clamped beam below coplanar waveguide transmission line (CPW);
(16) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below distance between the upper silicon nitride medium layer of main line coplanar waveguide transmission line (CPW); The photoetching polyimide sacrificial layer, only retain the sacrifice layer of clamped beam below;
(17) evaporation titanium/gold/titanium, its thickness is
: the down payment of evaporation for electroplating;
(18) photoetching: removal will be electroplated local photoresist;
(19) electrogilding, its thickness are 2 μ m;
(20) remove photoresist: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal connecting line;
(22) by this gallium arsenide substrate thinning back side to 100 μ m;
(23) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(24) external voltage controlled oscillator and multiplier.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (2)
1. frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics, it is characterized in that: the merit that comprise substrate (1), is arranged on substrate (1) is closed device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier, at axis of symmetry of the upper definition of substrate (1); Described merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire (2), coplanar waveguide transmission line (3), two sections asymmetric coplanar striplines (4), isolation resistance (5), two groups of clamped beams (12) He Mao districts (13); Described MEMS indirect-type microwave power sensor comprises two groups of terminal resistances (6), metal thermocouple arm (7), semiconductor thermocouple arm (8), metal connecting line (9) and two direct current IOB (10);
Described ground wire (2) forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires, symmetries are positioned at one section common ground on the axis of symmetry;
Described coplanar waveguide transmission line (3) forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar striplines (4) input respectively; Described two sections asymmetric coplanar striplines (4) input is by isolation resistance (5) isolation, described two sections asymmetric coplanar striplines (4) output rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines (4) and isolation resistance (5) form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port;
Described two groups of clamped beams (12) are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam (12) is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on ground wire (2) the side ground wire and common ground that is positioned at the same side by anchor district (13) respectively;
Described output coplanar waveguide transmission line is connected by one group of terminal resistance (6) with two sections side ground wires respectively, and described two groups of terminal resistances (6) correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal connecting line (9), and the other end is connected with direct current IOB (10) by metal connecting line (9) respectively; One of them direct current IOB (10) is connected with the input of voltage controlled oscillator, another direct current IOB (10) ground connection; Described thermocouple is comprised of metal thermocouple arm (7) and semiconductor thermocouple arm (8);
The output of described voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with the feedback signal input port.
2. a kind of frequency divider based on the indirect thermoelectric (al) type power sensor of micromechanics according to claim 1, it is characterized in that: between described coplanar waveguide transmission line (3) and clamped beam (12), be provided with silicon nitride medium layer (11), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203523632U CN203313160U (en) | 2013-06-19 | 2013-06-19 | Frequency divider based on micromechanical indirect thermoelectric power sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203523632U CN203313160U (en) | 2013-06-19 | 2013-06-19 | Frequency divider based on micromechanical indirect thermoelectric power sensor |
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| Publication Number | Publication Date |
|---|---|
| CN203313160U true CN203313160U (en) | 2013-11-27 |
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ID=49619329
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|---|---|---|---|
| CN2013203523632U Withdrawn - After Issue CN203313160U (en) | 2013-06-19 | 2013-06-19 | Frequency divider based on micromechanical indirect thermoelectric power sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346789A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency divider based on micromachine indirect thermoelectric type power sensor and manufacturing method |
-
2013
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346789A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency divider based on micromachine indirect thermoelectric type power sensor and manufacturing method |
| CN103346789B (en) * | 2013-06-19 | 2015-09-09 | 东南大学 | A kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131127 Effective date of abandoning: 20150909 |
|
| RGAV | Abandon patent right to avoid regrant |