CN203313159U - Frequency divider based on micro mechanical direct thermoelectric power sensor - Google Patents
Frequency divider based on micro mechanical direct thermoelectric power sensor Download PDFInfo
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- CN203313159U CN203313159U CN2013203523399U CN201320352339U CN203313159U CN 203313159 U CN203313159 U CN 203313159U CN 2013203523399 U CN2013203523399 U CN 2013203523399U CN 201320352339 U CN201320352339 U CN 201320352339U CN 203313159 U CN203313159 U CN 203313159U
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Abstract
The utility model discloses a frequency divider based on a micro mechanical direct thermoelectric power sensor. The frequency divider comprises a substrate, a ground wire arranged on the substrate, an MEMS power combiner, a coplanar waveguide transmission wire, two groups of MEMS clamped beam structures, an MEMS direct thermoelectric microwave power sensor, an external voltage controlled oscillator and an external multiplier. The MEMS power combiner is used for carrying out vector synthesis on two input signals. The MEMS direct thermoelectric microwave power sensor detects the power of a synthesized microwave signal. Finally direct current voltage is output. According to the utility model, the provided frequency divider based on the micro mechanical direct thermoelectric power sensor has a novel structure; the composition module of a general frequency divider is simplified; two modules of a discriminator and a low pass filter are directly simplified into a module composed of the MEMS power combiner and the MEMS direct thermoelectric microwave power sensor; the integration degree of the frequency divider is improved; and the frequency divider can be compatible with a GaAs monolithic microwave integration circuit.
Description
Technical field
The utility model relates to a kind of frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, belongs to microelectron-mechanical (MEMS) technology.
Background technology
Along with the development of information technology, frequency divider is widely used in the fields such as communication, frequency synthesis, measurement and sound equipment, and it also is widely used in frequency synthesizer, phase-locked oscillator and audio signal such as separate at the technology.Frequency divider is a kind of nonlinear device that can be produced as the frequency of oscillation of the whole approximate number of its incoming frequency, and frequency divider has that stability is high, noise is low, simple in structure, volume is little and be easy to integrated advantage.Along with the use of Monolithic Microwave Integrated Circuit Technology and constantly perfect, frequency divider is also in fast development.The current primary study direction of frequency divider is how to increase work efficiency, reduce power consumption, reduce conversion loss, reduce chip area.Along with the development of MEMS technology, and, nowadays for deepening continuously that the direct Thermoelectric Microwave Power Sensor of MEMS is studied, make to utilize the MEMS technology to realize becoming possibility based on the frequency divider of the direct thermoelectric (al) type power sensor of micromechanics.
The utility model content
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides a kind of frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics and preparation method thereof, by phase discriminator and two module reductions of low pass filter, be directly one and close by the MEMS merit module that device and the direct Thermoelectric Microwave Power Sensor of MEMS form, to improve the integrated level of frequency divider.
Technical scheme: for achieving the above object, the technical solution adopted in the utility model is:
Frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics, comprise substrate, be arranged on ground wire, MEMS merit on substrate and close device, co-planar waveguide (CPW) transmission line, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier, axis of symmetry of definition on substrate;
Described ground wire forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (ACPS) and the isolation resistance of axis of symmetry both sides, the input of described two sections asymmetric coplanar striplines by isolation resistance isolate, output is connected;
Described coplanar waveguide transmission line forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input of two sections asymmetric coplanar striplines respectively, and conduct is with reference to signal input port and feedback signal input port respectively; The output of the described two sections asymmetric coplanar striplines rear access output coplanar waveguide transmission line that is connected, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam He Mao district, and top, two ends that described MEMS clamped beam is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by the anchor district respectively; Described MEMS clamped beam forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance, semiconductor thermocouple arm and direct current IOB, described signal output port is divided into two-way and by one group of tantalum nitride resistance, is connected with two sections side ground wires with the semiconductor thermocouple arm respectively, wherein one section side ground wire is by a direct current IOB access voltage controlled oscillator, and another section side ground wire is by another direct current IOB ground connection; Described two groups of tantalum nitride resistance and semiconductor thermocouple arm form cascaded structure;
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator.
Preferably, the part surface that is positioned at MEMS clamped beam below on described input coplanar waveguide transmission line is coated with the silicon nitride medium layer.
Preferably, between the double layer of metal of the connecting line between one of them direct current IOB and side ground wire, the silicon nitride medium layer is arranged.
Preferably, the power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and on the direct current IOB with the formal output measurement result of direct voltage.
Described substrate is gallium arsenide substrate.
In above-mentioned frequency divider, the CPW transmission line is for realizing the transmission of microwave signal.The MEMS clamped beam forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, and the design of this building-out capacitor can be dwindled the size that the MEMS merit is closed device when realizing the circuit impedance coupling, make the integrated level of whole frequency divider higher.The MEMS merit is closed device, and for the two paths of signals (reference signal and feedback signal) that will input, to carry out vector synthetic, then by the direct Thermoelectric Microwave Power Sensor of MEMS, detected the power of the microwave signal after synthetic, last output dc voltage; The direct voltage of output directly is linked into the input of voltage controlled oscillator, produces output signal by voltage controlled oscillator; The output signal that voltage controlled oscillator produces accesses feedback signal terminal after multiplier, form negative feed back control system, thereby realizes the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics.By this frequency divider, can realize the function of output signal with respect to the frequency division of the frequency output of reference signal.
A kind of preparation method of the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics, comprise the steps:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate extension N
+GaAs, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will retain the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, MEMS clamped beam De Mao district;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(12) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
: the down payment of evaporation for electroplating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(21) external voltage controlled oscillator and multiplier.
Beneficial effect: the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics that the utility model provides not only has novel structure, and simplified the composition module of general frequency divider, it by phase discriminator and two module reductions of low pass filter is directly one and closes by the MEMS merit module that device and the direct Thermoelectric Microwave Power Sensor of MEMS form, improved the integrated level of frequency divider, and can with GaAs monolithic integrated microwave circuit compatibility.
The accompanying drawing explanation
Fig. 1 is plan structure schematic diagram of the present utility model;
Fig. 2 is that the A-A' of Fig. 1 is to profile;
Fig. 3 is that the B-B' of Fig. 1 is to profile.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
Be the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics as shown in Figure 1, Figure 2, Figure 3 shows, comprise substrate 1, be arranged on ground wire 2, MEMS merit on substrate 1 and close device, coplanar waveguide transmission line 3, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multipliers, axis of symmetry of definition on substrate 1; Below with regard to each part, illustrated.
Described ground wire 2 forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry.
Described MEMS merit is closed device, and for the two paths of signals (reference signal and feedback signal) that will input, to carry out vector synthetic, it forms along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines 4 and the isolation resistance 5 of axis of symmetry both sides, the input of described two sections asymmetric coplanar striplines 4 is connected by isolation resistance 5 isolation, output.
Described coplanar waveguide transmission line 3 is be used to realizing the transmission of microwave signal, it forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input of two sections asymmetric coplanar striplines 4 respectively, and conduct is with reference to signal input port and feedback signal input port respectively; The output of the described two sections asymmetric coplanar striplines 4 rear access output coplanar waveguide transmission line that is connected, as signal output port.
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam 10He Mao district 11, and top, two ends that described MEMS clamped beam 10 is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district 11 respectively; The part surface that is positioned at MEMS clamped beam 10 belows on described input coplanar waveguide transmission line is coated with silicon nitride medium layer 9, described MEMS clamped beam 10 forms building-out capacitor with the input coplanar waveguide transmission line that is positioned at its below, the design of this building-out capacitor can be dwindled the MEMS power splitter when realizing the circuit impedance coupling size, make the integrated level of whole frequency divider higher.
The direct Thermoelectric Microwave Power Sensor of described MEMS detects and output dc voltage for the power that the MEMS merit is closed to the microwave signal after device synthesizes, it comprises two groups of tantalum nitride resistance 7, semiconductor thermocouple arm 6 and direct current IOB 8, described signal output port is divided into two-way and by one group of tantalum nitride resistance 7, is connected with two sections side ground wires with semiconductor thermocouple arm 6 respectively, wherein one section side ground wire is by a direct current IOB 8 access voltage controlled oscillators, and another section side ground wire is by another direct current IOB 8 ground connection; Described two groups of tantalum nitride resistance 7 and semiconductor thermocouple arm 6 form cascaded structure; Between the double layer of metal of the connecting line between one of them direct current IOB 8 and side ground wire, silicon nitride medium layer 9 is arranged.The power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and on direct current IOB 8 with the formal output measurement result of direct voltage.
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator, form negative feed back control system, thereby realize the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics.By this frequency divider, can realize the function of output signal with respect to the frequency division of the frequency output of reference signal.
A kind of preparation method of the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics, comprise the steps:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate extension N
+GaAs, the figure of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the photoresist in tantalum nitride place;
(5) sputter tantalum nitride, thickness are 1 μ m;
(6) peel off;
(7) photoetching: removal will retain the photoresist in the place of ground floor gold;
(8) evaporation ground floor gold, thickness is 0.3 μ m;
(9) peel off, form coplanar waveguide transmission line and ground wire, MEMS clamped beam De Mao district;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(12) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride medium layer on the coplanar waveguide transmission line of MEMS clamped beam below, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, require to fill up pit, by the thickness decision MEMS clamped beam of polyimide sacrificial layer and the distance between its below silicon nitride medium layer; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS clamped beam below;
(14) evaporation titanium/gold/titanium, thickness is
: the down payment of evaporation for electroplating;
(15) photoetching: removal will be electroplated local photoresist;
(16) electrogilding, thickness are 2 μ m;
(17) remove photoresist: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μ m;
(20) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(21) external voltage controlled oscillator and multiplier.
The above is only preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (4)
1. based on the frequency divider of the direct thermoelectric (al) type power sensor of micromechanics, it is characterized in that: comprise substrate (1), be arranged on ground wire (2), MEMS merit on substrate (1) and close device, coplanar waveguide transmission line (3), two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier, at axis of symmetry of the upper definition of substrate (1);
Described ground wire (2) forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires and symmetry and is positioned at one section common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise that symmetry is positioned at two sections asymmetric coplanar striplines (4) and the isolation resistance (5) of axis of symmetry both sides, the input of described two sections asymmetric coplanar striplines (4) is connected by isolation resistance (5) isolation, output;
Described coplanar waveguide transmission line (3) forms along axis of symmetry symmetrical structure, comprises the two sections input coplanar waveguide transmission lines and the symmetrical one section output coplanar waveguide transmission line be positioned on the axis of symmetry that are positioned at axis of symmetry both sides and are not connected; Described two sections input coplanar waveguide transmission lines are connected with the input of two sections asymmetric coplanar striplines (4) respectively, and conduct is with reference to signal input port and feedback signal input port respectively; The output of described two sections asymmetric coplanar striplines (4) the rear access output coplanar waveguide transmission line that is connected, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described MEMS fixed beam structure comprises MEMS clamped beam (10) He Mao district (11), and top, two ends that described MEMS clamped beam (10) is connected across the input coplanar waveguide transmission line that is positioned at the same side are fixed on the side ground wire and common ground that is positioned at the same side by anchor district (11) respectively; Described MEMS clamped beam (10) and the input coplanar waveguide transmission line that is positioned at its below form building-out capacitor;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance (7), semiconductor thermocouple arm (6) and direct current IOB (8), described signal output port is divided into two-way and by one group of tantalum nitride resistance (7), is connected with two sections side ground wires with semiconductor thermocouple arm (6) respectively, wherein one section side ground wire is by a direct current IOB (8) access voltage controlled oscillator, and another section side ground wire is by another direct current IOB (8) ground connection; Described two groups of tantalum nitride resistance (7) and semiconductor thermocouple arm (6) form cascaded structure;
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator.
2. the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1 is characterized in that: the part surface that is positioned at MEMS clamped beam (10) below on described input coplanar waveguide transmission line is coated with silicon nitride medium layer (9).
3. the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1, is characterized in that: between the double layer of metal of the connecting line between one of them direct current IOB (8) and side ground wire, silicon nitride medium layer (9) is arranged.
4. the frequency divider based on the direct thermoelectric (al) type power sensor of micromechanics according to claim 1, it is characterized in that: the power that the direct Thermoelectric Microwave Power Sensor of described MEMS closes the synthetic microwave signal of device output based on the Seebeck principle to the MEMS merit detects, and in the upper formal output measurement result with direct voltage of direct current IOB (8).
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| CN2013203523399U CN203313159U (en) | 2013-06-19 | 2013-06-19 | Frequency divider based on micro mechanical direct thermoelectric power sensor |
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| CN2013203523399U CN203313159U (en) | 2013-06-19 | 2013-06-19 | Frequency divider based on micro mechanical direct thermoelectric power sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346788A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency diverter based on micromechanical direct thermoelectric power sensors and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346788A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency diverter based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| CN103346788B (en) * | 2013-06-19 | 2015-09-09 | 东南大学 | Based on the frequency divider and preparation method thereof of micro-mechanical direct thermoelectric type power sensor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131127 Effective date of abandoning: 20150909 |
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