CN203313123U - Frequency multiplier based on micro mechanical indirect thermoelectric power sensor - Google Patents
Frequency multiplier based on micro mechanical indirect thermoelectric power sensor Download PDFInfo
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- CN203313123U CN203313123U CN2013203544446U CN201320354444U CN203313123U CN 203313123 U CN203313123 U CN 203313123U CN 2013203544446 U CN2013203544446 U CN 2013203544446U CN 201320354444 U CN201320354444 U CN 201320354444U CN 203313123 U CN203313123 U CN 203313123U
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Abstract
The utility model discloses a frequency multiplier based on a micro mechanical indirect thermoelectric power sensor. The frequency multiplier comprises a substrate which is made of gallium arsenide (GaAs), a power combiner, an MEMS indirect microwave power sensor, an external voltage controlled oscillator and an external divider, wherein the power combiner and the MEMS indirect microwave power sensor are arranged on the substrate. An output signal of the voltage controlled oscillator passes through the divider and then is fed back to an input end of the power combiner. A reference signal is applied to the other input end of the power combiner. Through the detection of the indirect thermoelectric power sensor, a voltage which is proportional to the phase difference between the reference signal and the output signal of the voltage controlled oscillator is acquired. The voltage is applied to the input end of the voltage controlled oscillator, so that the local oscillator signal frequency of the voltage controlled oscillator changes with the change of the input voltage. The frequency multiplier provided by the utility model has the advantages of simple structure, small volume, high precision and good practicality.
Description
Technical field
The utility model relates to the technical field of microelectromechanical systems (MEMS), especially relates to a kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics.
Background technology
Frequency multiplier (frequency multiplier) is to make output signal frequency equal the circuit of frequency input signal integral multiple.Utilize nonlinear circuit produce high order harmonic component or utilize frequency control-loop can form frequency multiplier.Frequency multiplier also can consist of a voltage controlled oscillator and control loop.Frequency multiplier has application in various fields, as radio communication, radar, Digital Television, broadcast etc.The Phase Locked Loop Frequency Doubler of current extensive employing has advantages of that precision is very high, and circuit structure is complicated, larger-size shortcoming but also have.Along with advancing by leaps and bounds of microelectric technique, new material, new technology, new technology continue to bring out, impel the requirement to electronic equipments such as wireless communication system and radar systems to improve constantly: simple structure, the frequency multiplier circuit that less volume and precision are higher becomes a kind of trend.Current, the MEMS technology is developed rapidly, and the research of thermoelectric (al) type power sensor reaches its maturity indirectly, therefore is necessary to design a kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics.
The utility model content
The deficiency existed for solving current frequency multiplier, the utility model proposes a kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics, and this frequency multiplier is simple in structure, volume is less, precision is higher.
For achieving the above object, the utility model adopts following technical scheme:
A kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics, the merit that comprise substrate, is arranged on substrate is closed device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and divider, axis of symmetry of definition on substrate; Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire, coplanar waveguide transmission line, two sections asymmetric coplanar striplines, isolation resistance, two groups of clamped beam He Mao districts; The MEMS indirect-type microwave power sensor comprises two groups of terminal resistances, metal thermocouple arm, semiconductor thermocouple arm, metal connecting line and two direct current IOB.
Described ground wire forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires, symmetries are positioned at one section common ground on the axis of symmetry.
Described coplanar waveguide transmission line forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar stripline inputs respectively; Described two sections asymmetric coplanar stripline inputs are isolated by isolation resistance, described two sections asymmetric coplanar stripline outputs rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines and isolation resistance form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port.
Described two groups of clamped beams are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on the ground wire side ground wire and common ground that is positioned at the same side by the anchor district respectively.
Described output coplanar waveguide transmission line is connected by one group of terminal resistance with two sections side ground wires respectively, and described two groups of terminal resistances correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by the metal connecting line, and the other end is connected with the direct current IOB by the metal connecting line respectively; One of them direct current IOB is connected with the voltage controlled oscillator input, another direct current IOB ground connection; Described thermocouple is comprised of metal thermocouple arm and semiconductor thermocouple arm.
The output of described voltage controlled oscillator is connected with the divider input, and the output of described divider is connected with the feedback signal input port.
The coplanar waveguide transmission line that merit is closed device clamped beam and below forms building-out capacitor, and the size of dwindling power splitter when the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency multiplier higher.The output signal of voltage controlled oscillator feeds back to by a divider (÷ N) input that merit is closed device again, reference signal is added in another input that merit is closed device, through thermoelectric (al) type power sensor detection indirectly, obtain and the proportional voltage of the phase difference of reference signal and voltage controlled oscillator output signal, this voltage is added to the input of voltage controlled oscillator, and the local oscillation signal frequency of voltage controlled oscillator is changed along with the variation of the voltage of inputting.Appropriate loop design, this variation can make the frequency of voltage controlled oscillator output signal be reference signal N doubly.
Further, between described coplanar waveguide transmission line (3) and clamped beam (12), be provided with silicon nitride medium layer (11), it is upper that described silicon nitride medium layer (11) covers coplanar waveguide transmission line (3), and the coplanar waveguide transmission line that makes merit close device clamped beam and below forms building-out capacitor.
The utility model also proposes a kind of preparation method of the frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics, comprises following steps:
(1) make gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate the N of extension
+GaAs, figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: removal will retain the photoresist in tantalum nitride place;
(8) sputter tantalum nitride, its thickness are 1 μ m;
(9) peel off;
(10) photoetching: removal will retain the photoresist in the place of ground floor gold;
(11) evaporation ground floor gold, its thickness is 0.3 μ m;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam De Mao district, direct current IOB and metal connecting line;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
(15) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride on MEMS clamped beam below coplanar waveguide transmission line (CPW);
(16) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below distance between the upper silicon nitride medium layer of main line coplanar waveguide transmission line (CPW); The photoetching polyimide sacrificial layer, only retain the sacrifice layer of clamped beam below;
(17) evaporation titanium/gold/titanium, its thickness is
The down payment of evaporation for electroplating;
(18) photoetching: removal will be electroplated local photoresist;
(19) electrogilding, its thickness are 2 μ m;
(20) remove photoresist: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal connecting line;
(22) by this gallium arsenide substrate thinning back side to 100 μ m;
(23) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(24) external voltage controlled oscillator and divider.
Beneficial effect: (1) frequency multiplier of the present utility model, based on the indirect thermoelectric (al) type power sensor of micromechanics, has novel structure, the advantage that circuit size is little, and have higher precision; (2) frequency multiplier of the present utility model be easy to integrated, and with GaAs monolithic integrated microwave circuit compatibility; (3) merit in frequency multiplier of the present utility model is closed the coplanar waveguide transmission line formation building-out capacitor of device clamped beam and its below, the size of dwindling power splitter when the design of this building-out capacitor can realize the circuit impedance coupling, make the integrated level of whole frequency multiplier higher.
The accompanying drawing explanation
Fig. 1 is frequency multiplier structure vertical view of the present utility model;
Fig. 2 is the A-A' profile of Fig. 1;
Fig. 3 is the B-B' profile of Fig. 1;
Embodiment:
Below in conjunction with accompanying drawing, the utility model is done further and explained.
As shown in Figure 1, a kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics the utility model proposes, comprise that take GaAs (GaAs) closes device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and divider as the substrate 1 of material, the merit be arranged on substrate 1, axis of symmetry of definition on substrate 1, as shown in Figure 2.
Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire 2, coplanar waveguide transmission line 3, two sections asymmetric coplanar striplines 4, isolation resistance 5, two groups of clamped beam 12He Mao districts 13; The effect that merit is closed device is with reference to signal and through the signal that divider (÷ N) feedback control loop is exported, carries out vector and synthesize.Carry out having a phase difference between two synthetic microwave signals of vector, there are the relation of a cosine function in the power of composite signal and this phase difference.
The MEMS indirect-type microwave power sensor comprises two groups of terminal resistances 6, metal thermocouple arm 7, semiconductor thermocouple arm 8, metal connecting line 9 and two direct current IOB 10; The MEMS indirect-type microwave power sensor detects the size of composite signal power based on the Seebeck principle, and exports with voltage form.
Coplanar waveguide transmission line 3 forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar stripline 4 inputs respectively; Described two sections asymmetric coplanar stripline 4 inputs are by isolation resistance 5 isolation, described two sections asymmetric coplanar stripline 4 outputs rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines 4 and isolation resistance 5 form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port; As shown in Figure 3, be provided with silicon nitride medium layer 11 between described coplanar waveguide transmission line 3 and clamped beam 12, described silicon nitride medium layer 11 covers on coplanar waveguide transmission line 3, and the coplanar waveguide transmission line that makes merit close device clamped beam and below forms building-out capacitor.
Two groups of clamped beams 12 are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam 12 is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on the ground wire 2 side ground wires and common ground that are positioned at the same side by anchor district 13 respectively;
The output coplanar waveguide transmission line is connected by one group of terminal resistance 6 with two sections side ground wires respectively, and described two groups of terminal resistances 6 correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal connecting line 9, and the other end is connected with direct current IOB 10 by metal connecting line 9 respectively; One of them direct current IOB 10 is connected with the voltage controlled oscillator input, another direct current IOB 10 ground connection; Described thermocouple is comprised of metal thermocouple arm 7 and semiconductor thermocouple arm 8;
The output of voltage controlled oscillator is connected with the divider input, and the output of described divider is connected with the feedback signal input port.Voltage controlled oscillator and divider can consist of the sheet external circuit.The output signal of voltage controlled oscillator feeds back to merit by a divider (÷ N) again and closes one of them input of device, reference signal is added in another input that merit is closed device, merit is closed device, and to carry out vector synthetic, the microwave signal power delivery obtained is to indirect thermoelectric (al) type power sensor, export the voltage that a phase difference with reference signal and voltage controlled oscillator output signal is ratio, this voltage is added to the input of voltage controlled oscillator, the local frequency of voltage controlled oscillator changes along with the variation of this input voltage, if loop design is proper, when loop-locking, the frequency of voltage controlled oscillator output signal is N times of reference signal frequency.
The utility model also provides a kind of preparation method of the frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics to be:
(1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
(2) photoetching isolate the N of extension
+GaAs, figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
(3) anti-carve N
+GaAs, forming its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: removal will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: removal will retain the photoresist in tantalum nitride place;
(8) sputter tantalum nitride, its thickness are 1 μ m;
(9) peel off;
(10) photoetching: removal will retain the photoresist in the place of ground floor gold;
(11) evaporation ground floor gold, its thickness is 0.3 μ m;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam De Mao district, direct current IOB and metal connecting line;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Thick silicon nitride medium layer;
(15) photoetching etch silicon nitride dielectric layer: be retained in the silicon nitride on MEMS clamped beam below coplanar waveguide transmission line (CPW);
(16) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply the thick polyimide sacrificial layer of 1.6 μ m, pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below distance between the upper silicon nitride medium layer of main line coplanar waveguide transmission line (CPW); The photoetching polyimide sacrificial layer, only retain the sacrifice layer of clamped beam below;
(17) evaporation titanium/gold/titanium, its thickness is
The down payment of evaporation for electroplating;
(18) photoetching: removal will be electroplated local photoresist;
(19) electrogilding, its thickness are 2 μ m;
(20) remove photoresist: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, the corrosion down payment, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal connecting line;
(22) by this gallium arsenide substrate thinning back side to 100 μ m;
(23) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries;
(24) external voltage controlled oscillator and divider.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (2)
1. frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics, it is characterized in that: the merit that comprise substrate (1), is arranged on substrate (1) is closed device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and divider, at axis of symmetry of the upper definition of substrate (1); Described merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire (2), coplanar waveguide transmission line (3), two sections asymmetric coplanar striplines (4), isolation resistance (5), two groups of clamped beams (12) He Mao districts (13); Described MEMS indirect-type microwave power sensor comprises two groups of terminal resistances (6), metal thermocouple arm (7), semiconductor thermocouple arm (8), metal connecting line (9) and two direct current IOB (10);
Described ground wire (2) forms along axis of symmetry symmetrical structure, comprises that symmetry is positioned at axis of symmetry both sides and not contacted two sections side ground wires, symmetries are positioned at one section common ground on the axis of symmetry;
Described coplanar waveguide transmission line (3) forms along axis of symmetry symmetrical structure, comprises that two sections input coplanar waveguide transmission lines, symmetries being positioned at axis of symmetry both sides and not being connected are positioned at one section output coplanar waveguide transmission line on the axis of symmetry; Described two sections input coplanar waveguide transmission lines are connected with two sections asymmetric coplanar striplines (4) input respectively; Described two sections asymmetric coplanar striplines (4) input is by isolation resistance (5) isolation, described two sections asymmetric coplanar striplines (4) output rear access output coplanar waveguide transmission line that is connected; Described two sections asymmetric coplanar striplines (4) and isolation resistance (5) form along axis of symmetry symmetrical structure; Conduct is with reference to signal input port and feedback signal input port respectively for described two sections input coplanar waveguide transmission lines, and described output coplanar waveguide transmission line is as signal output port;
Described two groups of clamped beams (12) are separately positioned on both sides and the relative axis of symmetry symmetry of the axis of symmetry, described clamped beam (12) is connected across the top of the input co-planar waveguide hop that is positioned at the same side, and two ends are fixed on ground wire (2) the side ground wire and common ground that is positioned at the same side by anchor district (13) respectively;
Described output coplanar waveguide transmission line is connected by one group of terminal resistance (6) with two sections side ground wires respectively, and described two groups of terminal resistances (6) correspondence respectively are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal connecting line (9), and the other end is connected with direct current IOB (10) by metal connecting line (9) respectively; One of them direct current IOB (10) is connected with the input of voltage controlled oscillator, another direct current IOB (10) ground connection; Described thermocouple is comprised of metal thermocouple arm (7) and semiconductor thermocouple arm (8);
The output of described voltage controlled oscillator is connected with the divider input, and the output of described divider is connected with the feedback signal input port.
2. a kind of frequency multiplier based on the indirect thermoelectric (al) type power sensor of micromechanics according to claim 1, it is characterized in that: between described coplanar waveguide transmission line (3) and clamped beam (12), be provided with silicon nitride medium layer (11), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203544446U CN203313123U (en) | 2013-06-19 | 2013-06-19 | Frequency multiplier based on micro mechanical indirect thermoelectric power sensor |
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| CN2013203544446U CN203313123U (en) | 2013-06-19 | 2013-06-19 | Frequency multiplier based on micro mechanical indirect thermoelectric power sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346738A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency multiplier based on micromachine indirect thermoelectric type power sensor and manufacturing method |
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2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346738A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency multiplier based on micromachine indirect thermoelectric type power sensor and manufacturing method |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131127 Effective date of abandoning: 20150909 |
|
| RGAV | Abandon patent right to avoid regrant |