CN105515572A - Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method - Google Patents
Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method Download PDFInfo
- Publication number
- CN105515572A CN105515572A CN201510815302.9A CN201510815302A CN105515572A CN 105515572 A CN105515572 A CN 105515572A CN 201510815302 A CN201510815302 A CN 201510815302A CN 105515572 A CN105515572 A CN 105515572A
- Authority
- CN
- China
- Prior art keywords
- frequency mixer
- waveguide transmission
- transmission line
- mems
- coplanar waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
Abstract
The invention discloses a phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and the frequency mixer comprises a substrate (1), a power combiner disposed on the substrate (1), the MEMS indirect-type microwave power sensor, an external voltage-controlled oscillator, a frequency mixer, and an intermediate frequency amplifier circuit, wherein a symmetric axis is defined on the substrate (1). The power combiner forms a structure which is symmetric relative to the symmetric axis, and comprises a ground line (2), a coplanar waveguide transmission line (3), an isolating resistor (5), two groups of fixed supporting beams (12), and an anchor region (13). The MEMS indirect-type microwave power sensor comprises two groups of terminal resistors (6), a metal thermocouple arm (7), a semiconductor thermocouple arm (8), a metal connection line (9), and two DC output blocks (10). The frequency mixer is novel in structure, is small in circuit size, and is higher in precision.
Description
Technical field
The present invention proposes the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor and preparation method, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
Phase-locked frequency mixer (phaselockedmixer) has been the phase-locked loop of mixing function.Frequency mixer is inserted and intermediate frequency amplifier can form phase-locked frequency mixer in the feedback network of phase-locked loop.Phase-locked frequency mixer can realize output signal frequency and equal two frequency input signal sums, difference or be both other combination, and the frequency of output signal can be made to follow the frequency change of input signal and change.Phase-locked frequency mixer is used widely in frequency synthesis and phase-locked receive.Current most of phase-locked frequency mixer has the very high advantage of precision, but also has circuit structure complexity, larger-size shortcoming.Along with advancing by leaps and bounds of microelectric technique, new material, new technology, new technology continue to bring out, impel and improve constantly the requirement of the electronic equipment such as wireless communication system and radar system: simple structure, less volume and the higher phase-locked mixer of precision become a kind of trend.Current, MEMS technology is developed rapidly, and the research of MEMS indirect-type microwave power sensor reaches its maturity, and making becomes possibility based on the phase-locked frequency mixer of MEMS indirect-type microwave power sensor and preparation method.
Summary of the invention
For solving the deficiency that current phase-locked frequency mixer exists, the present invention proposes the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor, and this phase-locked mixer architecture is simple, volume is less, precision is higher.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
Based on the phase-locked frequency mixer of MEMS indirect-type microwave power sensor, comprise substrate, be arranged on merit on substrate and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator, frequency mixer and IF amplifier circuit, substrate defines an axis of symmetry; Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire, coplanar waveguide transmission line, two sections of asymmetric coplanar striplines, isolation resistance, two groups of clamped beams and anchor districts; MEMS indirect-type microwave power sensor comprises two groups of terminal resistances, metal thermocouple arm, semiconductor thermocouple arm, metal contact wires and two direct current IOB.
Described ground wire is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry.
Described coplanar waveguide transmission line is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected input coplanar waveguide transmission lines, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline inputs respectively; Described two sections of asymmetric coplanar stripline inputs are isolated by isolation resistance, and after described two sections of asymmetric coplanar stripline outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines and isolation resistance are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port.
Described two groups of clamped beams are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district be positioned at the same side ground wire side ground wire and common ground on.
Described output coplanar waveguide transmission line is connected by one group of terminal resistance with two sections of side ground wires respectively, and described two groups of terminal resistances respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires, and the other end is connected with direct current IOB respectively by metal contact wires; One of them direct current IOB is connected with voltage controlled oscillator input, another direct current IOB ground connection; Described thermocouple is made up of metal thermocouple arm and semiconductor thermocouple arm.
The output of described voltage controlled oscillator is connected with frequency mixer input, another input of described frequency mixer is as the input of mixed frequency signal, the input of the output termination intermediate frequency amplifier of described frequency mixer, the output of described intermediate frequency amplifier is connected with feedback signal input port.
The coplanar waveguide transmission line that merit closes device clamped beam and below forms building-out capacitor, and the design of this building-out capacitor can reduce the size of power splitter while realizing circuit impedance matching, makes the integrated level of whole phase-locked frequency mixer higher.Mixed frequency signal is added in an input of frequency mixer, the output signal of voltage controlled oscillator feeds back to another input of frequency mixer, make the output of frequency mixer be difference frequency or and frequently signal, the output of frequency mixer is added in through intermediate frequency amplifier the input that merit closes device, reference signal is added in another input that merit closes device, detect through MEMS indirect-type microwave power sensor, obtain the voltage proportional with the phase difference of reference signal and voltage controlled oscillator output signal, this voltage is added to the input of voltage controlled oscillator, the output signal frequency of voltage controlled oscillator is changed along with the change of inputted voltage, if loop design is proper, when loop-locking, the frequency of voltage controlled oscillator output signal equals difference frequency or and the frequency of reference signal and mixed frequency signal.
Further, silicon nitride medium layer (11) is provided with between described coplanar waveguide transmission line (3) and clamped beam (12), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3), and the coplanar waveguide transmission line making merit close device clamped beam and below forms building-out capacitor.
The present invention also proposes the preparation method of the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor, comprises following steps:
(1) make gallium arsenide substrate: the semi-insulating GaAs substrate selecting extension, wherein the doping content of extension N+ GaAs is 1018cm-3, and its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N+ GaAs of extension, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) anti-carve N+ GaAs, form the semiconductor thermocouple arm that its doping content is the thermoelectric pile of 1017cm-3;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the silicon nitride medium layer of plasma-enhanced chemical vapour deposition technique grow thick;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line (CPW) below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and goes up the distance between silicon nitride medium layer at main line coplanar waveguide transmission line (CPW) below it; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is 500/1500/
the down payment of evaporation for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator, frequency mixer and intermediate frequency amplifier.
Beneficial effect: (1) phase-locked frequency mixer of the present invention based on MEMS indirect-type microwave power sensor, has novel structure, the advantage that circuit size is little, and has higher precision; (2) phase-locked frequency mixer of the present invention is easy to integrated, and compatible with GaAs monolithic integrated microwave circuit; (3) merit in phase-locked frequency mixer of the present invention closes device clamped beam and the coplanar waveguide transmission line below it forms building-out capacitor, the design of this building-out capacitor can reduce the size of power splitter while realizing circuit impedance matching, makes the integrated level of whole phase-locked frequency mixer higher.
Accompanying drawing explanation
Fig. 1 is phase-locked mixer architecture vertical view of the present invention;
Fig. 2 is the A-A' profile of Fig. 1;
Fig. 3 is the B-B' profile of Fig. 1.
Embodiment:
Below in conjunction with accompanying drawing the present invention done and further explain.
As shown in Figure 1, the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor that the present invention proposes, comprise and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator, frequency mixer and IF amplifier circuit with GaAs (GaAs) substrate 1 that is material, the merit arranged on substrate 1, define an axis of symmetry on substrate 1, as shown in Figure 2.
Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire 2, coplanar waveguide transmission line 3, two sections of asymmetric coplanar striplines 4, isolation resistance 5, two groups of clamped beams 12 and anchor district 13; The effect that merit closes device is Reference Signal and carries out Vector modulation through the signal that intermediate frequency amplifier exports.There is a phase difference between two microwave signals of carrying out Vector modulation, there is the relation of a cosine function in the power of composite signal and this phase difference.
MEMS indirect-type microwave power sensor comprises two groups of terminal resistances 6, metal thermocouple arm 7, semiconductor thermocouple arm 8, metal contact wires 9 and two direct current IOB 10; MEMS indirect-type microwave power sensor detects the size of composite signal power based on Seebeck principle, and exports in the form of voltage.
Ground wire 2 is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry;
Coplanar waveguide transmission line 3 is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected inputs coplanar waveguide transmission line, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline 4 inputs respectively; Described two sections of asymmetric coplanar stripline 4 inputs are isolated by isolation resistance 5, and after described two sections of asymmetric coplanar stripline 4 outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines 4 and isolation resistance 5 are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port; As shown in Figure 3, be provided with silicon nitride medium layer 11 between described coplanar waveguide transmission line 3 and clamped beam 12, described silicon nitride medium layer 11 covers on coplanar waveguide transmission line 3, and the coplanar waveguide transmission line making merit close device clamped beam and below forms building-out capacitor.
Two groups of clamped beams 12 are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam 12 is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district 13 be positioned at the same side ground wire 2 side ground wire and common ground on;
Export coplanar waveguide transmission line to be connected by one group of terminal resistance 6 with two sections of side ground wires respectively, described two groups of terminal resistances 6 respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires 9, and the other end is connected with direct current IOB 10 respectively by metal contact wires 9; One of them direct current IOB 10 is connected with voltage controlled oscillator input, another direct current IOB 10 ground connection; Described thermocouple is made up of metal thermocouple arm 7 and semiconductor thermocouple arm 8;
Voltage controlled oscillator, frequency mixer and IF amplifier circuit can be made up of sheet external circuit.An input of frequency mixer is connected with the output of voltage controlled oscillator, another input of frequency mixer adds mixed frequency signal, frequency mixer exports difference frequency or is added in the input of intermediate frequency amplifier with frequency signal, the output signal of intermediate frequency amplifier is added in the input that merit closes device, reference signal is added in another input that merit closes device, merit is closed device and is carried out Vector modulation, the microwave signal power delivery obtained is to MEMS indirect-type microwave power sensor, exporting one with the phase difference of reference signal and voltage controlled oscillator output signal is the voltage of ratio, this voltage is added to the input of voltage controlled oscillator, then the output signal frequency of voltage controlled oscillator changes along with the change of this input voltage, if loop design is proper, when loop-locking, the frequency of voltage controlled oscillator output signal equals difference frequency or and the frequency of reference signal and mixed frequency signal.
The preparation method that present invention also offers based on the phase-locked frequency mixer of MEMS indirect-type microwave power sensor is:
(1) prepare gallium arsenide substrate: the semi-insulating GaAs substrate selecting extension, wherein the doping content of extension N+ GaAs is 1018cm-3, and its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N+ GaAs of extension, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) anti-carve N+ GaAs, form the semiconductor thermocouple arm that its doping content is the thermoelectric pile of 1017cm-3;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the silicon nitride medium layer of plasma-enhanced chemical vapour deposition technique (PECVD) grow thick;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line (CPW) below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and goes up the distance between silicon nitride medium layer at main line coplanar waveguide transmission line (CPW) below it; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is 500/1500/
the down payment of evaporation for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator, frequency mixer and intermediate frequency amplifier.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. based on the phase-locked frequency mixer of MEMS indirect-type microwave power sensor, it is characterized in that: comprise substrate (1), be arranged on merit on substrate (1) and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator, frequency mixer and IF amplifier circuit, at the upper definition axis of symmetry of substrate (1); Described merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire (2), coplanar waveguide transmission line (3), two sections of asymmetric coplanar striplines (4), isolation resistance (5), two groups of clamped beams (12) and anchor district (13); Described MEMS indirect-type microwave power sensor comprises two groups of terminal resistances (6), metal thermocouple arm (7), semiconductor thermocouple arm (8), metal contact wires (9) and two direct current IOB (10).
2. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: described ground wire (2) is formed along axis of symmetry symmetrical structure, comprise symmetry and be positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry.
3. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: described coplanar waveguide transmission line (3) is formed along axis of symmetry symmetrical structure, comprise and be positioned at axis of symmetry both sides and two sections that are not connected inputs coplanar waveguide transmission line, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline (4) inputs respectively; Described two sections of asymmetric coplanar stripline (4) inputs are by isolation resistance (5) isolation, and after described two sections of asymmetric coplanar stripline (4) outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines (4) and isolation resistance (5) are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port.
4. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: described two groups of clamped beams (12) are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam (12) is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district (13) be positioned at the same side ground wire (2) side ground wire and common ground on.
5. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: described output coplanar waveguide transmission line (3) is connected by one group of terminal resistance (6) with two sections of side ground wires respectively, and described two groups of terminal resistances (6) respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires (9), and the other end is connected with direct current IOB (10) respectively by metal contact wires (9); One of them direct current IOB (10) is connected with the input of voltage controlled oscillator, another direct current IOB (10) ground connection; Described thermocouple is made up of metal thermocouple arm (7) and semiconductor thermocouple arm (8).
6. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: the output of described voltage controlled oscillator is connected with frequency mixer input, another input of described frequency mixer is as the input of mixed frequency signal, the input of the output termination intermediate frequency amplifier of described frequency mixer, the output of described intermediate frequency amplifier is connected with feedback signal input port.
7. the phase-locked frequency mixer based on MEMS indirect-type microwave power sensor according to claim 1, it is characterized in that: be provided with silicon nitride medium layer (11) between described coplanar waveguide transmission line (3) and clamped beam (12), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3).
8., based on the preparation method of the phase-locked frequency mixer of MEMS indirect-type microwave power sensor, it is characterized in that comprising following steps:
(1) make gallium arsenide substrate: the semi-insulating GaAs substrate selecting extension, wherein the doping content of extension N+ GaAs is 1018cm-3, and its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N+ GaAs of extension, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) anti-carve N+ GaAs, form the semiconductor thermocouple arm that its doping content is the thermoelectric pile of 1017cm-3;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line, asymmetric coplanar stripline, ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the silicon nitride medium layer of plasma-enhanced chemical vapour deposition technique grow thick;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and the distance below it on coplanar waveguide transmission line between silicon nitride medium layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line, asymmetric coplanar stripline, ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator, frequency mixer and intermediate frequency amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510815302.9A CN105515572A (en) | 2015-11-20 | 2015-11-20 | Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510815302.9A CN105515572A (en) | 2015-11-20 | 2015-11-20 | Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105515572A true CN105515572A (en) | 2016-04-20 |
Family
ID=55723290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510815302.9A Pending CN105515572A (en) | 2015-11-20 | 2015-11-20 | Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105515572A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6094102A (en) * | 1999-04-30 | 2000-07-25 | Rockwell Science Center, Llc | Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method |
| CN1620225A (en) * | 2003-11-20 | 2005-05-25 | 松下电器产业株式会社 | Laminated circuit board and its manufacturing method, and manufacturing method for module using the laminated circuit board and its manufacturing apparatus |
| CN103116067A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors |
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN104880705A (en) * | 2014-02-27 | 2015-09-02 | 北京大学 | Frequency-modulated continuous-wave radar based on numerically controlled oscillator |
-
2015
- 2015-11-20 CN CN201510815302.9A patent/CN105515572A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6094102A (en) * | 1999-04-30 | 2000-07-25 | Rockwell Science Center, Llc | Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method |
| CN1620225A (en) * | 2003-11-20 | 2005-05-25 | 松下电器产业株式会社 | Laminated circuit board and its manufacturing method, and manufacturing method for module using the laminated circuit board and its manufacturing apparatus |
| CN103116067A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors |
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN104880705A (en) * | 2014-02-27 | 2015-09-02 | 北京大学 | Frequency-modulated continuous-wave radar based on numerically controlled oscillator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103281074B (en) | A kind of phase-locked loop based on micromachine indirect thermoelectric type power sensor and method for making | |
| CN103344831B (en) | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof | |
| CN103048540B (en) | Based on online microwave frequency detector and the detection method thereof of semi-girder and direct-type power sensor | |
| CN203310915U (en) | Phase detector based on micro mechanical direct thermoelectric power sensor | |
| CN103116073B (en) | Cantilever beam and direct-type power sensor based microwave detecting system and detecting method thereof | |
| CN103048536B (en) | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor | |
| CN103105531A (en) | Micro electro-mechanical online microwave frequency detector and detecting method thereof | |
| CN103116067B (en) | On-line microwave frequency detector and detection method thereof based on clamped beams and indirect-type power sensors | |
| CN103281078B (en) | Based on frequency divider and the preparation method of micromechanics clamped beam condenser type power sensor | |
| CN103116071B (en) | Micro-electromechanical microwave frequency and power detecting system and detecting method thereof | |
| CN103346785B (en) | Based on the phase-locked loop and preparation method thereof of micro-mechanical direct thermoelectric type power sensor | |
| CN103344833B (en) | Phase detector based on micromachine indirect thermoelectric type power sensor and manufacturing method | |
| CN203313160U (en) | Frequency divider based on micromechanical indirect thermoelectric power sensor | |
| CN203313123U (en) | Frequency multiplier based on micro mechanical indirect thermoelectric power sensor | |
| CN103326668B (en) | Based on frequency multiplier and the preparation method of micromechanics clamped beam condenser type power sensor | |
| CN203313158U (en) | Phase locked loop based on micro mechanical indirect thermoelectric power sensor | |
| CN203313122U (en) | Frequency multiplier based on micro mechanical direct thermoelectric power sensor | |
| CN103346789B (en) | A kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making | |
| CN105515572A (en) | Phase-locking frequency mixer based on MEMS indirect-type microwave power sensor, and preparation method | |
| CN103346738B (en) | A kind of frequency multiplier based on micromachine indirect thermoelectric type power sensor and method for making | |
| CN103116070A (en) | Microwave detection system and detection method thereof based on clamped beams and direct-type power sensors | |
| CN203310918U (en) | Phase detector based on micromechanical indirect thermoelectric power sensor | |
| CN106841792B (en) | Online microwave phase detector device and detection method based on cantilever beam | |
| CN106059577B (en) | Frequency divider based on MEMS wideband phase detectors | |
| CN203313157U (en) | Phase locked loop based on micro mechanical direct thermoelectric power sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160420 |
|
| RJ01 | Rejection of invention patent application after publication |