CN103346789B - A kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making - Google Patents
A kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making Download PDFInfo
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- CN103346789B CN103346789B CN201310245644.2A CN201310245644A CN103346789B CN 103346789 B CN103346789 B CN 103346789B CN 201310245644 A CN201310245644 A CN 201310245644A CN 103346789 B CN103346789 B CN 103346789B
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Abstract
The invention discloses a kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making, the substrate that it is material that this frequency divider comprises with GaAs (GaAs), the merit be arranged on substrate closes device and MEMS indirect-type microwave power sensor, and external voltage controlled oscillator and multiplier, the output signal of voltage controlled oscillator feeds back to by a multiplier input that merit closes device again, reference signal is added in another input that merit closes device, detect through indirect thermal electric-type power sensor, obtain the voltage proportional with the phase difference of reference signal and voltage controlled oscillator output signal, this voltage is added to the input of voltage controlled oscillator, the local oscillation signal frequency of voltage controlled oscillator is changed along with the change of inputted voltage, the invention also discloses a kind of preparation method of the frequency divider based on micromachine indirect thermoelectric type power sensor on this basis.This invention structure is simple, volume is less, precision is higher, has good practicality.
Description
Technical field
The present invention relates to the technical field of microelectromechanical systems (MEMS), especially relate to a kind of frequency divider based on micromachine indirect thermoelectric type power sensor.
Background technology
Frequency divider (frequency divider) makes output signal frequency be the circuit of the whole approximate number of its incoming frequency.Frequency divider has application in various fields, as radio communication, radar, Digital Television, broadcast etc.The phase-locked loop frequency divider of current extensive employing has the very high advantage of precision, but also has circuit structure complexity, larger-size shortcoming.Along with advancing by leaps and bounds of microelectric technique, new material, new technology, new technology continue to bring out, impel and improve constantly the requirement of the electronic equipment such as wireless communication system and radar system: simple structure, less volume and the higher divider circuit of precision become a kind of trend.Current, MEMS technology is developed rapidly, the research of indirect thermal electric-type power sensor reaches its maturity, and makes the frequency divider based on micromachine indirect thermoelectric type power sensor become possibility, is therefore necessary to design a kind of frequency divider based on micromachine indirect thermoelectric type power sensor.
Summary of the invention
For solving the deficiency that current frequency divider exists, the present invention proposes a kind of frequency divider based on micromachine indirect thermoelectric type power sensor, and this fraction frequency device is simple, volume is less, precision is higher.
For achieving the above object, the present invention adopts following technical scheme:
Based on a frequency divider for micromachine indirect thermoelectric type power sensor, comprise substrate, be arranged on merit on substrate and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier, substrate defines an axis of symmetry; Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire, coplanar waveguide transmission line, two sections of asymmetric coplanar striplines, isolation resistance, two groups of clamped beams and anchor districts; MEMS indirect-type microwave power sensor comprises two groups of terminal resistances, metal thermocouple arm, semiconductor thermocouple arm, metal contact wires and two direct current IOB.
Described ground wire is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry.
Described coplanar waveguide transmission line is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected input coplanar waveguide transmission lines, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline inputs respectively; Described two sections of asymmetric coplanar stripline inputs are isolated by isolation resistance, and after described two sections of asymmetric coplanar stripline outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines and isolation resistance are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port.
Described two groups of clamped beams are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district be positioned at the same side ground wire side ground wire and common ground on.
Described output coplanar waveguide transmission line is connected by one group of terminal resistance with two sections of side ground wires respectively, and described two groups of terminal resistances respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires, and the other end is connected with direct current IOB respectively by metal contact wires; One of them direct current IOB is connected with voltage controlled oscillator input, another direct current IOB ground connection; Described thermocouple is made up of metal thermocouple arm and semiconductor thermocouple arm.
The output of described voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with feedback signal input port.
The coplanar waveguide transmission line that merit closes device clamped beam and below forms building-out capacitor, and the design of this building-out capacitor can reduce the size of power splitter while realizing circuit impedance matching, makes the integrated level of whole frequency divider higher.The output signal of voltage controlled oscillator feeds back to by a multiplier (× N) input that merit closes device again, reference signal is added in another input that merit closes device, detect through indirect thermal electric-type power sensor, obtain the voltage proportional with the phase difference of reference signal and voltage controlled oscillator output signal, this voltage is added to the input of voltage controlled oscillator, and the local oscillation signal frequency of voltage controlled oscillator is changed along with the change of inputted voltage.Appropriate loop design, this change can make the frequency of voltage controlled oscillator output signal be N/mono-of reference signal.
Further, silicon nitride medium layer (11) is provided with between described coplanar waveguide transmission line (3) and clamped beam (12), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3), and the coplanar waveguide transmission line making merit close device clamped beam and below forms building-out capacitor.
The present invention also proposes a kind of preparation method of the frequency divider based on micromachine indirect thermoelectric type power sensor, comprises following steps:
(1) gallium arsenide substrate is made: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N of extension
+gaAs, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
;
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line (CPW) below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and goes up the distance between silicon nitride medium layer at main line coplanar waveguide transmission line (CPW) below it; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is
: evaporate the down payment for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator and multiplier.
Beneficial effect: (1) frequency divider of the present invention, based on micromachine indirect thermoelectric type power sensor, has novel structure, the advantage that circuit size is little, and has higher precision; (2) frequency divider of the present invention is easy to integrated, and compatible with GaAs monolithic integrated microwave circuit; (3) merit in frequency divider of the present invention closes device clamped beam and the coplanar waveguide transmission line below it forms building-out capacitor, and the design of this building-out capacitor can reduce the size of power splitter while realizing circuit impedance matching, makes the integrated level of whole frequency divider higher.
Accompanying drawing explanation
Fig. 1 is fraction frequency device vertical view of the present invention;
Fig. 2 is the A-A' profile of Fig. 1;
Fig. 3 is the B-B' profile of Fig. 1;
Embodiment:
Below in conjunction with accompanying drawing the present invention done and further explain.
As shown in Figure 1, a kind of frequency divider based on micromachine indirect thermoelectric type power sensor that the present invention proposes, comprise and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier with GaAs (GaAs) substrate 1 that is material, the merit arranged on substrate 1, define an axis of symmetry on substrate 1, as shown in Figure 2.
Merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire 2, coplanar waveguide transmission line 3, two sections of asymmetric coplanar striplines 4, isolation resistance 5, two groups of clamped beams 12 and anchor district 13; The effect that merit closes device is Reference Signal and carries out Vector modulation through the signal that multiplier (× N) feedback control loop exports.There is a phase difference between two microwave signals of carrying out Vector modulation, there is the relation of a cosine function in the power of composite signal and this phase difference.
MEMS indirect-type microwave power sensor comprises two groups of terminal resistances 6, metal thermocouple arm 7, semiconductor thermocouple arm 8, metal contact wires 9 and two direct current IOB 10; MEMS indirect-type microwave power sensor detects the size of composite signal power based on Seebeck principle, and exports in the form of voltage.
Ground wire 2 is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry;
Coplanar waveguide transmission line 3 is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected inputs coplanar waveguide transmission line, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline 4 inputs respectively; Described two sections of asymmetric coplanar stripline 4 inputs are isolated by isolation resistance 5, and after described two sections of asymmetric coplanar stripline 4 outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines 4 and isolation resistance 5 are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port; As shown in Figure 3, be provided with silicon nitride medium layer 11 between described coplanar waveguide transmission line 3 and clamped beam 12, described silicon nitride medium layer 11 covers on coplanar waveguide transmission line 3, and the coplanar waveguide transmission line making merit close device clamped beam and below forms building-out capacitor.
Two groups of clamped beams 12 are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam 12 is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district 13 be positioned at the same side ground wire 2 side ground wire and common ground on;
Export coplanar waveguide transmission line to be connected by one group of terminal resistance 6 with two sections of side ground wires respectively, described two groups of terminal resistances 6 respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires 9, and the other end is connected with direct current IOB 10 respectively by metal contact wires 9; One of them direct current IOB 10 is connected with voltage controlled oscillator input, another direct current IOB 10 ground connection; Described thermocouple is made up of metal thermocouple arm 7 and semiconductor thermocouple arm 8;
The output of voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with feedback signal input port.Voltage controlled oscillator and multiplier can be made up of sheet external circuit.The output signal of voltage controlled oscillator feeds back to merit again by a multiplier (× N) and closes one of them input of device, reference signal is added in another input that merit closes device, merit is closed device and is carried out Vector modulation, the microwave signal power delivery obtained is to indirect thermal electric-type power sensor, exporting one with the phase difference of reference signal and voltage controlled oscillator output signal is the voltage of ratio, this voltage is added to the input of voltage controlled oscillator, then the local frequency of voltage controlled oscillator changes along with the change of this input voltage, if loop design is proper, when loop-locking, the frequency of voltage controlled oscillator output signal is N/mono-of reference signal.
The preparation method that present invention also offers a kind of frequency divider based on micromachine indirect thermoelectric type power sensor is:
(1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N of extension
+gaAs, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
;
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line (CPW) below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and goes up the distance between silicon nitride medium layer at main line coplanar waveguide transmission line (CPW) below it; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is
: evaporate the down payment for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line (CPW), asymmetric coplanar stripline (ACPS), ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator and multiplier.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. the frequency divider based on micromachine indirect thermoelectric type power sensor, it is characterized in that: comprise substrate (1), be arranged on merit on substrate (1) and close device and MEMS indirect-type microwave power sensor and external voltage controlled oscillator and multiplier, at the upper definition axis of symmetry of substrate (1); Described merit is closed device and is formed along axis of symmetry symmetrical structure, comprises ground wire (2), coplanar waveguide transmission line (3), two sections of asymmetric coplanar striplines (4), isolation resistance (5), two groups of clamped beams (12) and anchor district (13); Described MEMS indirect-type microwave power sensor comprises two groups of terminal resistances (6), metal thermocouple arm (7), semiconductor thermocouple arm (8), metal contact wires (9) and two direct current IOB (10);
Described ground wire (2) is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted, symmetry are positioned at one section of common ground on the axis of symmetry;
Described coplanar waveguide transmission line (3) is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected inputs coplanar waveguide transmission line, symmetries one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with two sections of asymmetric coplanar stripline (4) inputs respectively; Described two sections of asymmetric coplanar stripline (4) inputs are by isolation resistance (5) isolation, and after described two sections of asymmetric coplanar stripline (4) outputs are connected, access exports coplanar waveguide transmission line; Described two sections of asymmetric coplanar striplines (4) and isolation resistance (5) are formed along axis of symmetry symmetrical structure; Described two sections of input coplanar waveguide transmission lines are respectively as reference signal input port and feedback signal input port, and described output coplanar waveguide transmission line is as signal output port;
Described two groups of clamped beams (12) are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described clamped beam (12) is connected across the top of the input coplanar wave guide transmission part being positioned at the same side, two ends be fixed on respectively by anchor district (13) be positioned at the same side ground wire (2) side ground wire and common ground on;
Described output coplanar waveguide transmission line is connected by one group of terminal resistance (6) with two sections of side ground wires respectively, and described two groups of terminal resistances (6) respectively correspondence are provided with one group of thermocouple; One end of described two groups of thermocouples is connected in series by metal contact wires (9), and the other end is connected with direct current IOB (10) respectively by metal contact wires (9); One of them direct current IOB (10) is connected with the input of voltage controlled oscillator, another direct current IOB (10) ground connection; Described thermocouple is made up of metal thermocouple arm (7) and semiconductor thermocouple arm (8);
The output of described voltage controlled oscillator is connected with multiplier input, and the output of described multiplier is connected with feedback signal input port.
2. a kind of frequency divider based on micromachine indirect thermoelectric type power sensor according to claim 1, it is characterized in that: be provided with silicon nitride medium layer (11) between described coplanar waveguide transmission line (3) and clamped beam (12), described silicon nitride medium layer (11) covers on coplanar waveguide transmission line (3).
3., as claimed in claim 1 based on a preparation method for the frequency divider of micromachine indirect thermoelectric type power sensor, it is characterized in that comprising following steps:
(1) gallium arsenide substrate is made: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate the N of extension
+gaAs, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove and will retain the local photoresist of gold germanium nickel/gold;
(5) sputter gold germanium nickel/gold, its thickness is altogether
(6) peel off, form the metal thermocouple arm of thermoelectric pile;
(7) photoetching: remove the photoresist that will retain tantalum nitride place;
(8) sputter tantalum nitride, its thickness is 1 μm;
(9) peel off;
(10) photoetching: remove the photoresist that will retain the place of ground floor gold;
(11) evaporate ground floor gold, its thickness is 0.3 μm;
(12) peel off, form coplanar waveguide transmission line, asymmetric coplanar stripline, ground wire, the anchor district of MEMS clamped beam, direct current IOB and metal contact wires;
(13) anti-carve tantalum nitride, form terminal resistance, its square resistance is 25 Ω/;
(14) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
(15) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on coplanar waveguide transmission line below MEMS clamped beam;
(16) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer determines MEMS clamped beam and the distance below it on coplanar waveguide transmission line between silicon nitride medium layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
(17) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
(18) photoetching: remove and will electroplate local photoresist;
(19) electrogilding, its thickness is 2 μm;
(20) photoresist is removed: remove and do not need to electroplate local photoresist;
(21) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line, asymmetric coplanar stripline, ground wire, MEMS clamped beam, direct current IOB and metal contact wires;
(22) by this gallium arsenide substrate thinning back side to 100 μm;
(23) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(24) external voltage controlled oscillator and multiplier.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598600A (en) * | 2004-09-07 | 2005-03-23 | 东南大学 | Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof |
| CN2725900Y (en) * | 2004-09-27 | 2005-09-14 | 东南大学 | Direct heating terminal type microwave power sensor of microelectronic mechanical system |
| CN203313160U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Frequency divider based on micromechanical indirect thermoelectric power sensor |
-
2013
- 2013-06-19 CN CN201310245644.2A patent/CN103346789B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1598600A (en) * | 2004-09-07 | 2005-03-23 | 东南大学 | Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof |
| CN2725900Y (en) * | 2004-09-27 | 2005-09-14 | 东南大学 | Direct heating terminal type microwave power sensor of microelectronic mechanical system |
| CN203313160U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Frequency divider based on micromechanical indirect thermoelectric power sensor |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City, Patentee before: Southeast University |
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