CN1598600A - Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof - Google Patents
Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof Download PDFInfo
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- CN1598600A CN1598600A CN 200410041882 CN200410041882A CN1598600A CN 1598600 A CN1598600 A CN 1598600A CN 200410041882 CN200410041882 CN 200410041882 CN 200410041882 A CN200410041882 A CN 200410041882A CN 1598600 A CN1598600 A CN 1598600A
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Abstract
The invention discloses indirect heating terminal type microwave power tiny machine sensor and its producing method, it is the product and method which uses terminal load type to achieve power-quantity of heat-voltage transferring to detect microwave power. There are coplane wave-guide and thermopile set on the underlay, and terminal resistance are set on them, a contact pads is set on the outer end of the thermopile; The producing method of the invention is: epitaxial growing GaAs on the underlay, mixing AlGaAS at the same time; photolithography AlGaAs and getting thermal couple arm, sending metal layer Ni/AuGe, and curving metal layer, annealing and getting contact area, depositing SiON dielectric layer, and photolithography, curving to get interconnection dactylopore of thermopile, depositing Au and photolithography coplanar wave-guide and metal interties; curving to get terminal resistance, photolithography and curving dielectric layer, to get insulating dielectric layer between terminal resistance and thermopile.
Description
Technical field
The present invention utilizes the form of terminator to realize that the conversion regime of power-heat (temperature)-voltage records microelectron mechanical structure product of microwave power and preparation method thereof, belongs to technical field of microelectronic devices.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature.In the research of each links such as generation, transmission and reception of microwave signal, microwave power measurement is absolutely necessary, and it has become the important component part of electromagnetic measurement.Big quantity research is all arranged both at home and abroad in this field, but with the microstructure microwave power detector of MEMS (micro electro mechanical system (MEMS) technology) development also seldom, the existing in this respect years of researches of China.
In communication and integrated circuit, more and more higher system frequency has proposed new requirement to microwave device low-cost, miniaturization, and the complanation of various transmission lines such as microstrip line, strip line, co-planar waveguide (CPW) etc., feasible design has more dirigibility, and can reduce weight, volume and manufacturing cost.It is simply integrated to require microwave device energy and digital-to-analog circuit to carry out in many application, but the small size plane component makes that manufacturing is more difficult, cost is higher.Along with micromachining technology constantly develops, it is applied in the microwave regime now more and more, and this just makes various passive microwave elements can use the micromachining technology manufacturing, thereby realizes the simply integrated of microwave component and digital-to-analog circuit.The sensor assembly that breaks away from the power meter sensing element has been adopted in present microwave power measurement.Indirect heating terminal type microwave power micro mechanical sensor is exactly a kind of sensor assembly wherein.
Traditional power meter adopts the thermoelectric (al) power sensor of waveguide form: bismuth-antimony commonly used is made thermocouple, adopts concentric cable as transmission line, and its major defect is a low-response, the level of burning is low, will use attenuator when measuring high power.
Summary of the invention
Technical matters: the purpose of this invention is to provide and a kind ofly utilize thermoelectric conversion to measure indirect heating terminal type microwave power micro mechanical sensor of microwave power and preparation method thereof.Use the shortcoming that this structure can overcome the thermoelectric (al) power sensor of conventional waveguide form, have that production cost is low, a reliability and repeatable high and can carry out advantages such as simple integrated.
Technical scheme: indirect heating terminal type microwave power micro mechanical sensor of the present invention is different from the thermoelectric (al) power sensor of traditional waveguide form, this structure utilizes the micromechanics co-planar waveguide of 50 Ω to come power input, connected a terminal resistance that matches in the co-planar waveguide terminal, this resistance is by the sheet resistance of two 100 Ω and be unified into 50 Ω, it near the resistance micro mechanical thermopile, it is the heat that is used for measuring the terminal resistance that absorbed microwave power and generated heat, according to the VD of thermoelectric pile, we can correspondingly learn the size of power input.
Structurally, indirect heating terminal type microwave power micro mechanical sensor of the present invention is provided with co-planar waveguide and thermoelectric pile on substrate, (two of this micro mechanical sensor length direction is the outer end in the inner of co-planar waveguide and thermoelectric pile, in the middle of it for inner) above be provided with terminal resistance, be provided with contact mat in the outer end of thermoelectric pile; Wherein thermoelectric pile is made up of thermopair arm, SiON medium, metal interconnecting wires, contact region metal, thermopair arm and SiON medium are that strip is spaced along the length direction of this sensor, on the thermopair arm, be provided with the contact region metal, be provided with metal interconnecting wires at the SiON medium with above the contact region metal; Be provided with insulating medium at co-planar waveguide with above metal interconnecting wires the inner, on insulating medium, be provided with terminal resistance; Co-planar waveguide is connected with terminal resistance.
Wherein: substrate adopts the GaAs material; The thermopair arm adopts the AlGaAs material.
Co-planar waveguide has three strip metal bands, and the two strip metal bands on both sides directly are connected with terminal resistance by the both sides of co-planar waveguide respectively; A middle strip metal band is connected with terminal resistance by an intermediate throughholes.
The concrete grammar of realizing this structure is:
1, prepare the GaAs substrate,
2, epitaxial growth GaAs on the GaAs substrate, as cushion,
3, extension AlGaAs (gallium aluminium arsenic) on GaAs mixes to AlGaAs simultaneously,
4, photoetching AlGaAs and etch the thermocouple arm,
5, send out metal level Ni/AuGe (nickel/golden germanium),
6, photoetching and etching sheet metal,
7, annealing obtains the contact region,
8, deposit SiON (silica nitrogen) dielectric layer, and photoetching, etching, the interconnection contact hole that in the acquisition thermoelectric pile metal interconnecting wires 8 is connected with contact region 9,
9, depositing metal (Au) and make co-planar waveguide by lithography and metal interconnecting wires,
10, deposit insulating medium layer,
11, depositing metal (such as nickel-chrome), and etching obtains terminal resistance,
12, photoetching, etching dielectric layer obtain the insulating medium layer between terminal resistance and the thermoelectric pile.
Beneficial effect:, the research and development of such device only are confined to scientific research field for a long time because the singularity of microwave power MEMS sensor construction.Microwave power MEMS sensor application exists and a series of obstacles such as incompatible, the repeatable poor reliability of main flow technology, production cost height in the large-scale production of integrated circuit.Indirect heating terminal type microwave power micro mechanical sensor structure among the present invention, the thermoelectric (al) power sensor construction of traditional waveguide form and the thinking restriction of technology have been broken through, searched out can with the integrated implementation method of simple digital-to-analog circuit, repeatable reliability all is greatly improved, and production cost significantly reduces.And it is good that this sensor has the linearity, and frequency band range is wide, power precision height, and response speed is fast, can measure advantages such as smaller power.
Indirect heating terminal type microwave power micro mechanical sensor among the present invention is different from the thermoelectric (al) power sensor of traditional waveguide form, this structure utilizes the micromechanics co-planar waveguide of 50 Ω to come power input, connected a terminal resistance that matches in the co-planar waveguide terminal, this resistance is by the sheet resistance of two 100 Ω and be unified into 50 Ω, it near the resistance micro mechanical thermopile, it is the heat that is used for measuring the terminal resistance that absorbed power and generated heat, according to the VD of thermoelectric pile, we can correspondingly learn the size of power input.Comparatively speaking, indirect heating terminal type microwave power micro mechanical sensor has following principal feature: one, the frequency of this metering system and input and waveform are irrelevant, so entire device particularly terminator and frequency-independent; Two, indirect heating terminal type microwave power micro mechanical sensor can adopt the manufacturing of GaAs MMIC technology, thereby realization and digital-to-analog circuit is simply integrated.
Characteristics based on above indirect heating terminal type microwave power micro mechanical sensor structure, the present invention has as can be seen clearly well solved the variety of issue that the thermoelectric (al) power sensor of traditional waveguide form of above mentioning is run into, and be easy to realize high reliability, high duplication, the low production cost of device satisfy simple integrated requirement well.Therefore, indirect heating terminal type microwave power micro mechanical sensor structure has using value and vast market potentiality preferably.
Indirect heating terminal type microwave power micro mechanical sensor structure provides support and assurance for the real commercial application of power measurement structure in integrated circuit that realize.
Description of drawings
Fig. 1 is an indirect heating terminal type microwave power micro mechanical sensor entity structure diagram.Wherein have: co-planar waveguide 1, terminal resistance 2, thermoelectric pile 3, contact mat 4.
Fig. 2 is the cut-open view of A among Fig. 1～A face, and substrate 5 is wherein arranged, thermopair arm 6, and SiON medium 7, metal interconnecting wires 8, contact region 9, insulating medium 10,
Fig. 3 is the partial sectional view of B among Fig. 1～B face.
Fig. 4 is under the fixed frequency condition, the graph of a relation of output and power.
Fig. 5 is under the constant power condition, the graph of a relation of output and frequency.
Embodiment
The concrete structure of indirect heating terminal type microwave power micro mechanical sensor of the present invention is as follows: be provided with co-planar waveguide 1 and thermoelectric pile 3 on substrate 5, on the inner of co-planar waveguide 1 and thermoelectric pile 3, be provided with terminal resistance 2, be provided with contact mat 4 in the outer end of thermoelectric pile 3; Wherein thermoelectric pile 3 is made up of thermopair arm 6, SiON medium 7, metal interconnecting wires 8, contact region 9, thermopair arm 6 and SiON medium 7 are that strip is spaced along the length direction of this sensor, on thermopair arm 6, be provided with contact region 9, be provided with metal interconnecting wires 8 at SiON medium 7 with above the contact region 9; Be provided with insulating medium 10 at co-planar waveguide 1 with above metal interconnecting wires 8 the inners, on insulating medium 10, be provided with terminal resistance 2; Co-planar waveguide 1 is connected with terminal resistance 2.
Co-planar waveguide 1 has three strip metal bands, and the two strip metal bands on both sides directly are connected with terminal resistance 2 by the both sides of co-planar waveguide 1 respectively; A middle strip metal band is connected with terminal resistance 2 by an intermediate throughholes.
The implementation of having designed with us based on GaAs MMIC technology.The concrete processing step and the parameter that realize indirect heating terminal type microwave power micro mechanical sensor organization plan based on GaAs MMIC technology are as follows:
1) prepares GaAs substrate (thick 400um)
2) extension GaAs (0.05um does not mix) on substrate is as cushion
3) extension AlGaAs (gallium aluminium arsenic) (1um, n=10 on GaAs
17Cm
-3)
4) photoetching AlGaAs and etch the thermocouple arm
5) evaporated metal layer Ni/AuGe (nickel/golden germanium) (0.2um)
6) photoetching and etching sheet metal
7) annealing obtains ohmic contact regions
8) deposit SiON (silica nitrogen) dielectric layer, and etching etching, the interconnection contact hole that in the acquisition thermoelectric pile metal interconnecting wires 8 is connected with contact region 9,
9) depositing metal (Au) and make co-planar waveguide by lithography and the thermoelectric pile interconnection line
10) deposit insulating medium layer
11) depositing metal (such as NiCr), and etching obtains 100 ohm terminal resistance of two parallel connections
12) photoetching, etching dielectric layer obtain the medium between resistance and the thermoelectric pile
In addition, note also some problems in the whole technical proposal, comprising: the resistance of terminal resistance must be very accurate, so the control of size is extremely important.In addition, in order to strengthen the mechanical stability of micro mechanical thermopile, the distance between its nonmetal arm must equate; The roughness of the etching surface of co-planar waveguide has very big influence to the performance of co-planar waveguide, and this has just proposed than higher requirement to etching process, and the quality of etching effect is crucial to whole sensor.
Make a general survey of the technological process of this indirect heating terminal type microwave power micro mechanical sensor of whole realization, wherein do not introduce any complicated special technology, compatible mutually with existing GaAs MMIC (monolithic integrated microwave circuit) technology fully.Therefore, the indirect heating terminal type microwave power micro mechanical sensor structure of using among the present invention can realize the commercial application of power measurement structure in integrated circuit, and then promotes the development of whole IC industry.
Claims (5)
1, a kind of indirect heating terminal type microwave power micro mechanical sensor, it is characterized in that on substrate (5), being provided with co-planar waveguide (1) and thermoelectric pile (3), on the inner of co-planar waveguide (1) and thermoelectric pile (3), be provided with terminal resistance (2), be provided with contact mat (4) in the outer end of thermoelectric pile (3); Wherein thermoelectric pile (3) is made up of thermopair arm (6), SiON medium (7), metal interconnecting wires (8), contact region metal (9), thermopair arm (6) and SiON medium (7) are that strip is spaced along the length direction of this sensor, on thermopair arm (6), be provided with contact region metal (9), be provided with metal interconnecting wires (8) at SiON medium (7) with above the contact region metal (9); Be provided with insulating medium (10) at co-planar waveguide (1) with above metal interconnecting wires (8) the inner, on insulating medium (10), be provided with terminal resistance (2); Co-planar waveguide (1) is connected with terminal resistance (2).
2, indirect heating terminal type microwave power micro mechanical sensor according to claim 1 is characterized in that substrate (5) adopts the GaAs material.
3, indirect heating terminal type microwave power micro mechanical sensor according to claim 1 is characterized in that thermopair arm (6) adopts the AlGaAs material.
4, indirect heating terminal type microwave power micro mechanical sensor according to claim 1 is characterized in that co-planar waveguide (1) has three strip metal bands, and the two strip metal bands on both sides directly are connected with terminal resistance (2) by the both sides of co-planar waveguide (1) respectively; A middle strip metal band is connected with terminal resistance (2) by an intermediate throughholes.
5, a kind of preparation method of indirect heating terminal type microwave power micro mechanical sensor as claimed in claim 1 is characterized in that the concrete grammar of realizing this structure is:
1) prepare GaAs substrate (5),
2) epitaxial growth GaAs on the GaAs substrate, as cushion,
3) extension AlGaAs on GaAs mixes to AlGaAs simultaneously,
4) photoetching AlGaAs and etch thermocouple arm (6),
5) send out metal level Ni/AuGe,
6) photoetching and etching sheet metal,
7) annealing obtains the contact region
8) deposit SiON dielectric layer, and photoetching, etching, the interconnection contact hole that in the acquisition thermoelectric pile metal interconnecting wires 8 is connected with contact region 9,
9) depositing metal Au and make co-planar waveguide (1) by lithography and metal interconnecting wires (8),
10) deposit insulating medium layer (10),
11) depositing metal, and etching acquisition terminal resistance (2),
12) photoetching, etching dielectric layer obtain the insulating medium layer (10) between terminal resistance and the thermoelectric pile.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200410041882 CN1275044C (en) | 2004-09-07 | 2004-09-07 | Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof |
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| CN 200410041882 CN1275044C (en) | 2004-09-07 | 2004-09-07 | Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof |
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| CN1598600A true CN1598600A (en) | 2005-03-23 |
| CN1275044C CN1275044C (en) | 2006-09-13 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100498348C (en) * | 2007-01-17 | 2009-06-10 | 东南大学 | Two-end heated microwave power sensor |
| CN101218503B (en) * | 2005-07-08 | 2012-01-04 | 芬兰国立技术研究中心 | Micromechanical sensor, sensor array and method |
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN103346738A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency multiplier based on micromachine indirect thermoelectric type power sensor and manufacturing method |
| CN103346789A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency divider based on micromachine indirect thermoelectric type power sensor and manufacturing method |
| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
-
2004
- 2004-09-07 CN CN 200410041882 patent/CN1275044C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101218503B (en) * | 2005-07-08 | 2012-01-04 | 芬兰国立技术研究中心 | Micromechanical sensor, sensor array and method |
| CN100498348C (en) * | 2007-01-17 | 2009-06-10 | 东南大学 | Two-end heated microwave power sensor |
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN103346738A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency multiplier based on micromachine indirect thermoelectric type power sensor and manufacturing method |
| CN103346789A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Frequency divider based on micromachine indirect thermoelectric type power sensor and manufacturing method |
| CN103281074B (en) * | 2013-06-19 | 2015-07-29 | 东南大学 | A kind of phase-locked loop based on micromachine indirect thermoelectric type power sensor and method for making |
| CN103346789B (en) * | 2013-06-19 | 2015-09-09 | 东南大学 | A kind of frequency divider based on micromachine indirect thermoelectric type power sensor and method for making |
| CN117470413A (en) * | 2023-12-27 | 2024-01-30 | 山东大学 | Film type heat flow sensor and preparation method thereof |
| CN117470413B (en) * | 2023-12-27 | 2024-03-29 | 山东大学 | Film type heat flow sensor and preparation method thereof |
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| CN1275044C (en) | 2006-09-13 |
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