CN103346788B - Based on the frequency divider and preparation method thereof of micro-mechanical direct thermoelectric type power sensor - Google Patents
Based on the frequency divider and preparation method thereof of micro-mechanical direct thermoelectric type power sensor Download PDFInfo
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Abstract
The invention discloses a kind of frequency divider based on micro-mechanical direct thermoelectric type power sensor and preparation method thereof, comprise substrate, the ground wire be arranged on substrate, MEMS merit close device, coplanar waveguide transmission line, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier; MEMS merit is closed device and is used for the two paths of signals of input to carry out Vector modulation, is then detected the power of the microwave signal after synthesis by the direct Thermoelectric Microwave Power Sensor of MEMS, last output dc voltage.Frequency divider based on micro-mechanical direct thermoelectric type power sensor provided by the invention not only has novel structure, and simplified the comprising modules of general frequency divider, phase discriminator and low pass filter two module reductions are directly a module be made up of MEMS merit conjunction device and the direct Thermoelectric Microwave Power Sensor of MEMS by it, improve the integrated level of frequency divider, and can be compatible with GaAs monolithic integrated microwave circuit.
Description
Technical field
The present invention relates to a kind of frequency divider based on micro-mechanical direct thermoelectric type power sensor and preparation method thereof, belong to microelectron-mechanical (MEMS) technology.
Background technology
Along with the development of information technology, frequency divider is widely used in the fields such as communication, frequency synthesis, measurement and sound equipment, and it have also been obtained and applies widely in frequency synthesizer, phase-locked oscillator and the technology such as audio signal is separated.Frequency divider is a kind of nonlinear device that can be produced as the frequency of oscillation of the whole approximate number of its incoming frequency, and frequency divider has that stability is high, noise is low, structure is simple, volume is little and be easy to integrated advantage.Along with the use of Monolithic Microwave Integrated Circuit Technology and constantly perfect, frequency divider is also in fast development.How to increase work efficiency, reduce power consumption, reduce conversion loss, reduce chip area in the current primary study direction of frequency divider.Along with the development of MEMS technology, and deepening continuously nowadays for the direct Thermoelectric Microwave Power Sensor research of MEMS, make to utilize MEMS technology to realize becoming possibility based on the frequency divider of micro-mechanical direct thermoelectric type power sensor.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of frequency divider based on micro-mechanical direct thermoelectric type power sensor and preparation method thereof, be directly a module be made up of MEMS merit conjunction device and the direct Thermoelectric Microwave Power Sensor of MEMS by phase discriminator and low pass filter two module reductions, to improve the integrated level of frequency divider.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
Based on the frequency divider of micro-mechanical direct thermoelectric type power sensor, comprise substrate, the ground wire be arranged on substrate, MEMS merit close device, co-planar waveguide (CPW) transmission line, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier, substrate defines an axis of symmetry;
Described ground wire is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted and symmetry are positioned at one section of common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise two sections of asymmetric coplanar striplines (ACPS) and isolation resistance that symmetry is positioned at axis of symmetry both sides, the input of described two sections of asymmetric coplanar striplines is connected by isolation resistance isolation, output;
Described coplanar waveguide transmission line is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected input coplanar waveguide transmission lines and symmetry one section of being positioned on the axis of symmetry exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with the input of two sections of asymmetric coplanar striplines, respectively respectively as reference signal input port and feedback signal input port; After the output of described two sections of asymmetric coplanar striplines is connected, access exports coplanar waveguide transmission line, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described MEMS fixed beam structure comprises MEMS clamped beam and anchor district, described MEMS clamped beam is connected across the top of the input coplanar waveguide transmission line being positioned at the same side, two ends be fixed on respectively by anchor district be positioned at the same side side ground wire and common ground on; Described MEMS clamped beam and the input coplanar waveguide transmission line be positioned at below it form building-out capacitor;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance, semiconductor thermocouple arm and direct current IOB, described signal output port is divided into two-way and is connected with two sections of side ground wires with semiconductor thermocouple arm respectively by one group of tantalum nitride resistance, wherein one section of side ground wire is by a direct current IOB access voltage controlled oscillator, and another section of side ground wire is by another direct current IOB ground connection; Described two groups of tantalum nitride resistance and semiconductor thermocouple arm form cascaded structure;
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator.
Preferably, on described input coplanar waveguide transmission line, the part surface be positioned at below MEMS clamped beam is coated with silicon nitride medium layer.
Preferably, silicon nitride medium layer is had between the double layer of metal of the connecting line between one of them direct current IOB and side ground wire.
Preferably, the direct Thermoelectric Microwave Power Sensor of described MEMS detects the power that MEMS merit closes the synthesis microwave signal that device exports based on Seebeck principle, and exports measurement result with the form of direct voltage in direct current IOB.
Described substrate is gallium arsenide substrate.
In above-mentioned frequency divider, CPW transmission line is for realizing the transmission of microwave signal.MEMS clamped beam and the input coplanar waveguide transmission line be positioned at below it form building-out capacitor, and the design of this building-out capacitor can reduce the size that MEMS merit closes device while realizing circuit impedance matching, makes the integrated level of whole frequency divider higher.MEMS merit is closed device and is used for the two paths of signals (reference signal and feedback signal) of input to carry out Vector modulation, is then detected the power of the microwave signal after synthesis by the direct Thermoelectric Microwave Power Sensor of MEMS, last output dc voltage; The direct voltage exported directly is linked into the input of voltage controlled oscillator, produces output signal by voltage controlled oscillator; The output signal that voltage controlled oscillator produces accesses feedback signal terminal after multiplier, forms negative feed back control system, thus realizes the frequency divider based on micro-mechanical direct thermoelectric type power sensor.Can be realized by this frequency divider outputing signal the function exported relative to the frequency division of the frequency of reference signal.
Based on a preparation method for the frequency divider of micro-mechanical direct thermoelectric type power sensor, comprise the steps:
(1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate extension N
+gaAs, forms the figure of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove the photoresist that will retain tantalum nitride place;
(5) sputter tantalum nitride, thickness is 1 μm;
(6) peel off;
(7) photoetching: remove the photoresist that will retain the place of ground floor gold;
(8) evaporate ground floor gold, thickness is 0.3 μm;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
(12) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride medium layer below MEMS clamped beam on coplanar waveguide transmission line, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit, determine MEMS clamped beam and the distance below it between silicon nitride medium layer by the thickness of polyimide sacrificial layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below MEMS clamped beam;
(14) evaporate titanium/gold/titanium, thickness is
the down payment of evaporation for electroplating;
(15) photoetching: remove and will electroplate local photoresist;
(16) electrogilding, thickness is 2 μm;
(17) photoresist is removed: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μm;
(20) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(21) external voltage controlled oscillator and multiplier.
Beneficial effect: the frequency divider based on micro-mechanical direct thermoelectric type power sensor provided by the invention not only has novel structure, and simplified the comprising modules of general frequency divider, phase discriminator and low pass filter two module reductions are directly a module be made up of MEMS merit conjunction device and the direct Thermoelectric Microwave Power Sensor of MEMS by it, improve the integrated level of frequency divider, and can be compatible with GaAs monolithic integrated microwave circuit.
Accompanying drawing explanation
Fig. 1 is plan structure schematic diagram of the present invention;
Fig. 2 is that the A-A' of Fig. 1 is to profile;
Fig. 3 is that the B-B' of Fig. 1 is to profile.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be the frequency divider based on micro-mechanical direct thermoelectric type power sensor as shown in Figure 1, Figure 2, Figure 3 shows, comprise substrate 1, setting ground wire 2 on substrate 1, MEMS merit conjunction device, coplanar waveguide transmission line 3, two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier, define an axis of symmetry on substrate 1; Illustrated with regard to each part below.
Described ground wire 2 is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted and symmetry are positioned at one section of common ground on the axis of symmetry.
Described MEMS merit is closed device and is used for the two paths of signals (reference signal and feedback signal) of input to carry out Vector modulation, it is formed along axis of symmetry symmetrical structure, comprise two sections of asymmetric coplanar striplines 4 and isolation resistance 5 that symmetry is positioned at axis of symmetry both sides, the input of described two sections of asymmetric coplanar striplines 4 is isolated by isolation resistance 5, output is connected.
Described coplanar waveguide transmission line 3 is for realizing the transmission of microwave signal, it is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected input coplanar waveguide transmission lines and symmetry are positioned on the axis of symmetry one section exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with the input of two sections of asymmetric coplanar striplines 4, respectively respectively as reference signal input port and feedback signal input port; After the output of described two sections of asymmetric coplanar striplines 4 is connected, access exports coplanar waveguide transmission line, as signal output port.
Described two groups of MEMS fixed beam structures are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, described MEMS fixed beam structure comprises MEMS clamped beam 10 and anchor district 11, described MEMS clamped beam 10 is connected across the top of the input coplanar waveguide transmission line being positioned at the same side, two ends be fixed on respectively by anchor district 11 be positioned at the same side side ground wire and common ground on; On described input coplanar waveguide transmission line, the part surface be positioned at below MEMS clamped beam 10 is coated with silicon nitride medium layer 9, described MEMS clamped beam 10 and the input coplanar waveguide transmission line be positioned at below it form building-out capacitor, the design of this building-out capacitor can reduce the size of MEMS power splitter while realizing circuit impedance matching, makes the integrated level of whole frequency divider higher.
The power that the direct Thermoelectric Microwave Power Sensor of described MEMS is used for the microwave signal after closing device synthesis to MEMS merit carries out detection and output dc voltage, it comprises two groups of tantalum nitride resistance 7, semiconductor thermocouple arm 6 and direct current IOB 8, described signal output port is divided into two-way and is connected with two sections of side ground wires with semiconductor thermocouple arm 6 respectively by one group of tantalum nitride resistance 7, wherein one section of side ground wire accesses voltage controlled oscillator by a direct current IOB 8, and another section of side ground wire is by another direct current IOB 8 ground connection; Described two groups of tantalum nitride resistance 7 and semiconductor thermocouple arm 6 form cascaded structure; Silicon nitride medium layer 9 is had between the double layer of metal of the connecting line between one of them direct current IOB 8 and side ground wire.The direct Thermoelectric Microwave Power Sensor of described MEMS detects the power that MEMS merit closes the synthesis microwave signal that device exports based on Seebeck principle, and exports measurement result with the form of direct voltage in direct current IOB 8.
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator, forms negative feed back control system, thus realizes the frequency divider based on micro-mechanical direct thermoelectric type power sensor.Can be realized by this frequency divider outputing signal the function exported relative to the frequency division of the frequency of reference signal.
Based on a preparation method for the frequency divider of micro-mechanical direct thermoelectric type power sensor, comprise the steps:
(1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate extension N
+gaAs, forms the figure of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove the photoresist that will retain tantalum nitride place;
(5) sputter tantalum nitride, thickness is 1 μm;
(6) peel off;
(7) photoetching: remove the photoresist that will retain the place of ground floor gold;
(8) evaporate ground floor gold, thickness is 0.3 μm;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
(12) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride medium layer below MEMS clamped beam on coplanar waveguide transmission line, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit, determine MEMS clamped beam and the distance below it between silicon nitride medium layer by the thickness of polyimide sacrificial layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below MEMS clamped beam;
(14) evaporate titanium/gold/titanium, thickness is
the down payment of evaporation for electroplating;
(15) photoetching: remove and will electroplate local photoresist;
(16) electrogilding, thickness is 2 μm;
(17) photoresist is removed: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μm;
(20) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(21) external voltage controlled oscillator and multiplier.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. based on the frequency divider of micro-mechanical direct thermoelectric type power sensor, it is characterized in that: comprise substrate (1), the ground wire (2) be arranged on substrate (1), MEMS merit close device, coplanar waveguide transmission line (3), two groups of MEMS fixed beam structures and the direct Thermoelectric Microwave Power Sensor of MEMS and external voltage controlled oscillator and multiplier, at the upper definition axis of symmetry of substrate (1);
Described ground wire (2) is formed along axis of symmetry symmetrical structure, comprises symmetry and is positioned at axis of symmetry both sides and the two sections of side ground wires do not contacted and symmetry are positioned at one section of common ground on the axis of symmetry;
Described MEMS merit is closed device and is formed along axis of symmetry symmetrical structure, comprise two sections of asymmetric coplanar striplines (4) and isolation resistance (5) that symmetry is positioned at axis of symmetry both sides, the input of described two sections of asymmetric coplanar striplines (4) is connected by isolation resistance (5) isolation, output;
Described coplanar waveguide transmission line (3) is formed along axis of symmetry symmetrical structure, comprises being positioned at axis of symmetry both sides and two sections that are not connected input coplanar waveguide transmission lines and symmetry are positioned on the axis of symmetry one section exports coplanar waveguide transmission line; Described two sections of input coplanar waveguide transmission lines are connected with the input of two sections of asymmetric coplanar striplines (4), respectively respectively as reference signal input port and feedback signal input port; After the output of described two sections of asymmetric coplanar striplines (4) is connected, access exports coplanar waveguide transmission line, as signal output port;
Described two groups of MEMS fixed beam structures are separately positioned on the both sides of the axis of symmetry and relative symmetry axisymmetrical, often organize MEMS fixed beam structure and include a MEMS clamped beam (10) and Liang Gemao district (11), described MEMS clamped beam (10) is connected across the top of the input coplanar waveguide transmission line being positioned at the same side, two ends be fixed on respectively by anchor district (11) be positioned at the same side side ground wire and common ground on; Described MEMS clamped beam (10) and the input coplanar waveguide transmission line be positioned at below it form building-out capacitor;
The direct Thermoelectric Microwave Power Sensor of described MEMS comprises two groups of tantalum nitride resistance (7), semiconductor thermocouple arm (6) and direct current IOB (8), described signal output port is divided into two-way and is connected with two sections of side ground wires with semiconductor thermocouple arm (6) respectively by one group of tantalum nitride resistance (7), wherein one section of side ground wire is by direct current IOB (8) access voltage controlled oscillator, and another section of side ground wire is by another direct current IOB (8) ground connection; Described two groups of tantalum nitride resistance (7) and semiconductor thermocouple arm (6) form cascaded structure;
The frequency-doubled signal access feedback signal input port produced after the output signal access multiplier of described voltage controlled oscillator.
2. the frequency divider based on micro-mechanical direct thermoelectric type power sensor according to claim 1, is characterized in that: the part surface described input coplanar waveguide transmission line being positioned at MEMS clamped beam (10) below is coated with silicon nitride medium layer (9).
3. the frequency divider based on micro-mechanical direct thermoelectric type power sensor according to claim 1, is characterized in that: have silicon nitride medium layer (9) between the double layer of metal of the connecting line between one of them direct current IOB (8) and side ground wire.
4. the frequency divider based on micro-mechanical direct thermoelectric type power sensor according to claim 1, it is characterized in that: the direct Thermoelectric Microwave Power Sensor of described MEMS detects the power that MEMS merit closes the synthesis microwave signal that device exports based on Seebeck principle, and export measurement result with the form of direct voltage in direct current IOB (8).
5. a preparation method for the frequency divider based on micro-mechanical direct thermoelectric type power sensor according to claim 1, is characterized in that: comprise the steps:
(1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
(2) photoetching isolate extension N
+gaAs, forms the figure of the semiconductor thermocouple arm of thermoelectric pile;
(3) N is anti-carved
+gaAs, forming doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
(4) photoetching: remove the photoresist that will retain tantalum nitride place;
(5) sputter tantalum nitride, thickness is 1 μm;
(6) peel off;
(7) photoetching: remove the photoresist that will retain the place of ground floor gold;
(8) evaporate ground floor gold, thickness is 0.3 μm;
(9) peel off, form coplanar waveguide transmission line and ground wire, the anchor district of MEMS clamped beam;
(10) anti-carve tantalum nitride, form tantalum nitride resistance and isolation resistance, its square resistance is 25 Ω/;
(11) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
(12) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride medium layer below MEMS clamped beam on coplanar waveguide transmission line, and the silicon nitride medium layer of isolation MEMS direct thermoelectric (al) type power sensor output and ground wire junction;
(13) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, pit is filled up in requirement, determines MEMS clamped beam and the distance below it between silicon nitride medium layer by the thickness of polyimide sacrificial layer; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below MEMS clamped beam;
(14) evaporate titanium/gold/titanium, thickness is
the down payment of evaporation for electroplating;
(15) photoetching: remove and will electroplate local photoresist;
(16) electrogilding, thickness is 2 μm;
(17) photoresist is removed: remove and do not need to electroplate local photoresist;
(18) anti-carve titanium/gold/titanium, corrosion down payment, forms coplanar waveguide transmission line, ground wire, MEMS clamped beam, direct current IOB;
(19) by this gallium arsenide substrate thinning back side to 100 μm;
(20) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature;
(21) external voltage controlled oscillator and multiplier.
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2013
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| US8093967B1 (en) * | 2006-03-16 | 2012-01-10 | University Of South Florida | MEMS high speed switching converter |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
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