CN103812465B - The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics - Google Patents
The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics Download PDFInfo
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- CN103812465B CN103812465B CN201410052364.4A CN201410052364A CN103812465B CN 103812465 B CN103812465 B CN 103812465B CN 201410052364 A CN201410052364 A CN 201410052364A CN 103812465 B CN103812465 B CN 103812465B
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Abstract
The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present invention are parallel-connected to MIM electric capacity between CPW holding wire and ground wire and two by two and are connected in series to the MIM electric capacity symmetrical left and right sides that is placed on a planar spiral inductor successively of CPW holding wire, thereby form the bandpass characteristics of this wave filter; Four MIM electric capacity symmetries that connected by lead-in wire are placed on to the left and right sides of planar spiral inductor and between two the MIM electric capacity being parallel-connected between CPW holding wire and ground wire; Each MIM electric capacity being connected by lead-in wire has different capacitances; Whether control respectively four MIM electric capacity that connected by lead-in wire by four MEMS clamped beams is connected with CPW ground wire, thereby utilize the planar spiral inductor of a small electric sensibility reciprocal and the MIM electric capacity of several small electric capacitances to realize this reconfigurable microwave bandpass filter to have the variation of centre frequency and the bandwidth of 16 states, broken through the inductance of traditional reconfigurable microwave bandpass filter and electric capacity quantity is many and the larger restriction of its value.
Description
Technical field
The present invention proposes the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics, belong to micro-electricityThe technical field of sub-mechanical system (MEMS).
Background technology
Wave filter is one of most important device in microwave engineering. Desirable wave filter is a two-port network:In free transmission range, it can make microwave signal transmit completely, and it makes microwave signal completely not in stopband rangeCan transmission. At present, due to more and more general with multi-frequency working in the field such as communicate by letter at radar, and to frequentlyThe selection of rate and inhibition require also corresponding raising, so need a large amount of high performance filters. According to substantially electricRoad theory, wave filter is generally four classes: low pass, high pass, band lead to and bandstop filter. Bandpass filterBe most widely used, there is important Research Significance. At present, on the sheet of design GHz frequency, the passive band of LC is logicalWave filter mainly adopts transmission line theory and two kinds of methods of on-chip inductor. Method based on transmission line theory refers toGo out passive bandpass filters at microwave frequency band by stray inductance and the capacitor design of utilizing transmission line. The methodBe operated in the wave filter of several GHz frequencies for making, need to take sizable chip area, be not suitable forThe application of high integration. Method based on on-chip inductor refers to by utilizing several on-chip inductors and electric capacityDesign passive bandpass filters. The method has limited passive filter because the quality factor of on-chip inductor are not highThe performance of ripple device, but its integrated level is higher. Along with the fast development of MEMS technology, MEMS technology is to improve sheetThe quality factor of upper microwave inductance and realize the important method of restructural wave filter. The present invention is based on sheetThe 16 state reconfigurable microwave bandpass filters that the method for upper inductance and MEMS technology realize.
Summary of the invention
Technical problem: in order to overcome the deficiencies in the prior art, the invention provides a kind of micromechanics solidProp up beam type 16 state reconfigurable microwave bandpass filters, this reconfigurable microwave bandpass filter is because adopting oneThere is planar spiral inductor and several MIM electric capacity with small electric capacitance of small electric sensibility reciprocal, so occupyLess chip area, improved integrated level.
Technical scheme: the present invention by two be parallel-connected to co-planar waveguide (CPW) holding wire and ground wire itBetween metal-insulator-metal (MIM) electric capacity and two MIM electric capacity that are connected in series to CPW holding wireThe symmetrical left and right sides that is placed on a planar spiral inductor successively, thus form a π type topological structureMicrowave band-pass filter; Be placed on snail electricity by the MIM electric capacity symmetry that four are connected by lead-in wireSense the left and right sides and between two the MIM electric capacity being parallel-connected between CPW holding wire and ground wire,While is on two MIM electric capacity edges that connected by lead-in wire of any side of the left and right sides of planar spiral inductorThe front and back bilateral symmetry of CPW holding wire is placed; These four the MIM electric capacity that connected by lead-in wire have respectively differentCapacitance; Each MIM electric capacity being connected by lead-in wire is connected in series by a lead-in wire, wherein every lead-in wireOne end be connected with CPW holding wire, and the other end make near CPW ground wire and on its end one protrudingPoint; Above the salient point of every lead terminal across a MEMS clamped beam, two of this MEMS clamped beamGe Mao district is positioned on the CPW ground wire of phase the same side, and the both sides that go between below each MEMS clamped beam are placed and drivenMoving electrode; By apply driving voltage between one or several MEMS clamped beam and corresponding drive electrode,One or several MEMS clamped beam is contacted with salient point thereunder, thereby realize this reconfigurable microwaveBandpass filter has the change of centre frequency and the bandwidth of 16 states.
Structurally, the clamped beam type 16 state reconfigurable microwave bandpass filters of this micromechanics serve as a contrast at GaAsThe end, is provided with the CPW of horizontal positioned, planar spiral inductor, two and is parallel-connected to CPW holding wire and groundA MIM electric capacity between line and the 2nd MIM electric capacity, two the 3rd MIM that are connected in series to CPW holding wireElectric capacity and the 4th MIM electric capacity, four the 5th MIM electric capacity, the 6th MIM electric capacity, the 7th that are connected by lead-in wireMIM electric capacity and the 8th MIM electric capacity, lead-in wire, salient point, MEMS clamped beam, drive electrode, connecting line, pressureWelding block and air bridges; The centre of CPW is CPW holding wire, and the both sides of CPW holding wire are CPW ground wire, twoIndividually be parallel-connected to a MIM electric capacity between CPW holding wire and ground wire and the 2nd MIM electric capacity and twoBe connected in series to the 3rd MIM electric capacity of CPW holding wire and the 4th MIM electric capacity successively symmetry be placed on plane spiral shellRevolve the left and right sides of inductance, form the microwave band-pass filter of π type; Four the 5th MIM that connected by lead-in wireElectric capacity, the 6th MIM electric capacity, the 7th MIM electric capacity and the 8th MIM electric capacity symmetry are placed on planar spiral inductorThe left and right sides and at two MIM electric capacity and that are parallel-connected between CPW holding wire and ground wireBetween two MIM electric capacity, simultaneously two in any side of the left and right sides of planar spiral inductor are connected by lead-in wireThe 5th MIM electric capacity connecing and the 7th MIM electric capacity, or the 6th MIM electric capacity and the 8th MIM electric capacity are believed along CPWThe front and back bilateral symmetry of number line is placed; Each MIM electric capacity being connected by lead-in wire is to be connected in series by a lead-in wire, wherein one end of every lead-in wire is connected with CPW holding wire, and the other end is near CPW ground wire and at itOn end, make a salient point; Above the salient point of every lead terminal across a MEMS clamped beam,A drive electrode is placed respectively in the both sides of each MEMS clamped beam below lead-in wire; At each MEMS clamped beamTwo drive electrodes of below interconnect and pass through a connecting line and are connected with the press welding block of CPW ground outsideConnect; Thereby control respectively four by the microwave band-pass filter and four the MEMS clamped beams that utilize a π typeIndividual the 5th MIM electric capacity, the 6th MIM electric capacity, the 7th MIM electric capacity and the 8th MIM electric capacity being connected by lead-in wireWhether be connected with CPW ground wire, realized the center frequency of 16 states of this reconfigurable microwave bandpass filterThe change of rate and bandwidth.
Planar spiral inductor is positioned at the middle part of this reconfigurable microwave bandpass filter; Planar spiral inductor bagDraw together coil and lower floor's passage two parts of inductance; The coil of planar spiral inductor is suspended on gallium arsenide substrate,And lower floor's passage is positioned in gallium arsenide substrate; The external lug of the coil of inductance be connected with CPW holding wire andIts internal connection is connected with lower floor passage; The other end of lower floor's passage is connected with CPW holding wire; FlatOn lower floor's passage of the coil below of surface helix inductance, cover Si3N4Insulating medium layer.
Described the 5th MIM electric capacity, the 6th MIM electric capacity, the 7th MIM electric capacity and the 8th MIM electric capacity are respectivelyThere is different capacitances.
The number of MEMS clamped beam is 4; Wherein, the two ends of each MEMS clamped beam are respectively by two anchorsDistrict is fixed on the CPW ground wire of phase the same side of CPW holding wire; Below MEMS clamped beam on drive electrodeCover Si3N4Insulating medium layer.
Described MEMS clamped beam, whether this MEMS clamped beam contacts with the salient point on lead-in wire thereunderControl respectively four the 5th MIM electric capacity, the 6th MIM electric capacity, the 7th MIM electric capacity that connected by lead-in wire orWhether the 8th MIM electric capacity is connected with CPW ground wire.
The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present invention are by two in parallel companiesReceive the MIM that MIM electric capacity between CPW holding wire and ground wire and two are connected in series to CPW holding wireElectric capacity is the symmetrical left and right sides that is placed on a planar spiral inductor successively; By what four were connected by lead-in wireMIM electric capacity symmetry is placed on the left and right sides of planar spiral inductor and is positioned at two and is parallel-connected to CPW signalBetween MIM electric capacity between line and ground wire, simultaneously in any side of the left and right sides of planar spiral inductorTwo MIM electric capacity that connected by lead-in wire are placed along the front and back bilateral symmetry of CPW holding wire; These four by going betweenThe MIM electric capacity connecting has respectively different capacitances; Each MIM electric capacity being connected by lead-in wire is by oneLead-in wire is connected in series, and wherein one end of every lead-in wire is connected with CPW holding wire, and the other end is near CPWGround wire and make a salient point on its end; Above the salient point of every lead terminal across a MEMSClamped beam, this MEMS clamped beam Liang Gemao district is positioned on the CPW ground wire of phase the same side, at each MEMSDrive electrode is placed in the both sides of clamped beam below lead-in wire, below MEMS clamped beam, on drive electrode, covers Si3N4Insulating medium layer. When do not apply driving voltage between four MEMS clamped beams and drive electrode separately time,Four MEMS clamped beams are all in UP state, each MEMS clamped beam all not with the salient point phase of its below lead-in wireContact, now four MIM electric capacity that connected by lead-in wire are not all connected with CPW ground wire, at snailThe MIM capacitance size in parallel of the left and right sides of inductance does not all change, thereby has realized this reconfigurable microwave bandThe centre frequency of first state of bandpass filter and bandwidth; When only at a MEMS clamped beam with drive accordinglyBetween moving electrode, apply driving voltage, this MEMS clamped beam in DOWN state and other three do not apply and driveThe MEMS clamped beam of moving voltage, still in UP state, only has the protruding of a MEMS clamped beam and its below lead-in wirePoint contacts, now in the left side of planar spiral inductor or MIM electric capacity being connected by lead-in wire on right side withCPW ground wire is connected, and has changed in the left side of planar spiral inductor or the MIM electric capacity in parallel on right side largeLittle, again because be positioned at four MIM electric capacity that connected by lead-in wire tool respectively of the left and right sides of planar spiral inductorThere is different capacitances, thereby realized second, the 3rd, of this reconfigurable microwave bandpass filterCentre frequency and the bandwidth of four and the 5th states; When driving with corresponding at any two MEMS clamped beamsBetween electrode, apply driving voltage, these two MEMS clamped beams are in DOWN state and two other does not applyThe MEMS clamped beam of driving voltage, still in UP state, has the protruding of two MEMS clamped beams and its below lead-in wirePoint contacts, now at two of the left side of planar spiral inductor or right side two or each sideThe MIM electric capacity being connected by lead-in wire is connected with CPW ground wire, has changed the left side at planar spiral inductorThe size of the MIM electric capacity in parallel of side or right side or the left and right sides, again because these four MIM that connected by lead-in wireElectric capacity has respectively different capacitances, thus realized the 6th of this reconfigurable microwave bandpass filter,Centre frequency and the bandwidth of the 7th, the 8th, the 9th, the tenth and the 11 state; When in officeAnticipate and apply driving voltage, these three MEMS clamped beams between three MEMS clamped beams and corresponding drive electrodeIn DOWN state and another one does not apply the MEMS clamped beam of driving voltage still in UP state, have threeIndividual MEMS clamped beam contacts with the salient point of its below lead-in wire, now two of the left side of planar spiral inductorWith one of right side or right side two MIM electric capacity and CPW ground wires that are connected by lead-in wire with left sideBe connected, changed the size at the MIM electric capacity in parallel of the left and right sides of planar spiral inductor, again becauseThese four the MIM electric capacity that connected by lead-in wire have respectively different capacitances, thereby it is micro-to have realized this restructuralThe centre frequency of the 12, the 13, the 14 of wavestrip bandpass filter and the 15 state andBandwidth; When all apply driving voltage between four MEMS clamped beams and drive electrode separately time, fourMEMS clamped beam is all in DOWN state, and four MEMS clamped beams all contact with the salient point of its below lead-in wire,Now four MIM electric capacity that connected by lead-in wire of the left and right sides of planar spiral inductor all with CPW ground wire phaseConnect, changed the size at the MIM electric capacity in parallel of the left and right sides of planar spiral inductor, thereby realizeCentre frequency and the bandwidth of the 16 state of this reconfigurable microwave bandpass filter.
Beneficial effect: the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present invention, noBut realized 16 states centre frequency variation and also changed its corresponding bandwidth; Adopt oneLess and the several MIM electric capacity with small electric capacitance of planar spiral inductor and its inductance value, thus break throughTraditional reconfigurable microwave bandpass filter in the time changing its centre frequency and bandwidth, must adopt and multiplely haveThe inductance of big inductance quantity or there is the restriction of the electric capacity of larger capacitance; This reconfigurable microwave bandpass filtering utensilHave less chip area and with GaAs single-chip microwave integration circuit compatibility.
Brief description of the drawings
Fig. 1 is the schematic diagram of the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics;
Fig. 2 is the A-A profile of the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics;
Fig. 3 is the B-B profile of the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics;
Figure comprises: CPW1, planar spiral inductor 2, the passage 2-1 of lower floor, coil 2-2, a MIM electricityHold 3, the 2nd MIM electric capacity 4, the 3rd MIM electric capacity 5, the 4th MIM electric capacity 6, the 5th MIM electric capacity 7, theSix MIM electric capacity 8, the 7th MIM electric capacity 9, the 8th MIM electric capacity 10, Si3N4Insulating medium layer 11, lead-in wire12, salient point 13, MEMS clamped beam 14, drive electrode 15, connecting line 16, press welding block 17, air bridges 18And gallium arsenide substrate 19.
Specific embodiments
The specific embodiments of the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present inventionAs follows:
In gallium arsenide substrate 19, be provided with CPW1 that port diagnostic impedance is 50 Ω, planar spiral inductor 2,Two are parallel-connected to a MIM electric capacity 3 between CPW holding wire and ground wire and the 2nd MIM electric capacity 4, twoThe 3rd MIM electric capacity 5 of the individual CPW of being connected in series to holding wire and the 4th MIM electric capacity 6, four be connected by lead-in wireThe 5th MIM electric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10, lead-in wire12, salient point 13, MEMS clamped beam 14, drive electrode 15, connecting line 16, press welding block 17 and air bridges18：
CPW1, by forming at conplane three lines, is wherein positioned at a middle letter that line is CPWNumber line and two lines being positioned at both sides are the ground wire of CPW; CPW1 lies in a horizontal plane on substrate 19, for realityThe existing transmission of microwave signal and the electrical connection of planar spiral inductor 2 and MIM electric capacity. For the ease of instrumentMeasure, the port diagnostic impedance of this CPW1 is designed to 50 Ω.
Planar spiral inductor 2 is positioned at the middle part of this reconfigurable microwave bandpass filter, and it mainly comprises electricityCoil 2-2 and the passage 2-1 of lower floor two parts of sense. Wherein, the coil 2-2 of planar spiral inductor is suspended inOn GaAs substrate 19, and the passage 2-1 of lower floor is positioned on GaAs substrate 19; Outside the coil 2-2 of inductancePortion's joint is connected with CPW holding wire and its internal connection is connected with the passage 2-1 of lower floor; The passage 2-1 of lower floorThe other end be connected with CPW holding wire. The passage 2-1 of lower floor below the coil 2-2 of planar spiral inductorUpper covering Si3N4Insulating medium layer 11.
A two MIM electric capacity 3 and the 2nd MIM electric capacity 4 that are parallel-connected between CPW holding wire and ground wireSymmetry is located at the left and right sides of planar spiral inductor 2. Wherein, the bottom crown of this MIM electric capacity and CPW groundLine is connected, and its top crown is connected with CPW holding wire, is Si between upper bottom crown3N4DielectricLayer 11.
Two the 3rd MIM electric capacity 5 and the 4th MIM electric capacity 6 that are connected in series to CPW holding wire are same symmetricalBe located at the left and right sides of planar spiral inductor 2. Wherein, between the upper bottom crown of this MIM electric capacity, pass through Si3N4Insulating medium layer 11 separates.
Planar spiral inductor 2, two are parallel-connected to the MIM between CPW holding wire and ground wireElectric capacity 3 and the 2nd MIM electric capacity 4 and two are connected in series to the 3rd MIM electric capacity 5 Hes of CPW holding wireThe 4th MIM electric capacity 6 has formed the basic structure of this microwave band-pass filter. This structure is one, and to have band logicalThe π type topological structure of characteristic, and planar spiral inductor 2 and a MIM electric capacity 3, the 2nd MIM electric capacity4, the 3rd MIM electric capacity 5 and the 4th MIM electric capacity 6 have respectively less inductance value and capacitance, therebyWhile having avoided employing filter synthesis method/insertion loss method design microwave band-pass filter, not only need quantityMany inductance and the inductance value of inductance are more greatly, adopt planar spiral inductor difficulty on sheets up to tens nH(conventionallyTo reach so high inductance value) drawback. Wherein, the variation of the inductance value of planar spiral inductor 2 is mainThe centre frequency of this microwave band-pass filter is offset; Two MIM electric capacity 3 and second in parallelThe variation of the capacitance of MIM electric capacity 4 mainly makes the centre frequency of this microwave band-pass filter skew occur and changeBecome the bandwidth of its bandpass filter; The 3rd MIM electric capacity 5 of two series connection and the electricity of the 4th MIM electric capacity 6The variation of capacitance mainly changes the bandwidth of this microwave band-pass filter.
Four the 5th MIM electric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electric capacity 9 being connected by lead-in wire and theEight MIM electric capacity 10 are the symmetrical left and right sides that is placed on planar spiral inductor 2 not only, and is located at those twoBe parallel-connected between the MIM electric capacity 3 and the 2nd MIM electric capacity 4 between CPW holding wire and ground wire;Wherein, at two the 5th MIM that connected by lead-in wire of any side of the left and right sides of planar spiral inductor 2Electric capacity 7 and the 7th MIM electric capacity 9, or the 6th MIM electric capacity 8 and the 8th MIM electric capacity 10 symmetries are placed on CPWThe both sides, front and back of holding wire; These four the 5th MIM electric capacity 7 being connected by lead-in wire, the 6th MIM electric capacity 8, theSeven MIM electric capacity 9 and the 8th MIM electric capacity 10 have respectively different capacitances; Each MIM being connected by lead-in wireThe upper bottom crown of electric capacity passes through Si3N4Insulating medium layer 11 separates.
Lead-in wire 12 is four, and wherein every lead-in wire 12 is connected in series the MIM electric capacity being connected by lead-in wire.One end of every lead-in wire 12 is connected with CPW holding wire, and the other end of lead-in wire 12 is close to CPW ground wireAnd on its end, there is a salient point 13. The end of two of CPW holding wire front side lead-in wires 12 respectively toThe CPW ground wire of planar spiral inductor 2 front sides is close, and at the end of two of CPW holding wire rear side lead-in wires 12Hold close to the CPW ground wire of planar spiral inductor 2 rear sides respectively.
Salient point 13 lays respectively on the end of every lead-in wire 12, for reducing MEMS clamped beam 14 because of staticPower effect and lead-in wire 12 driving voltage being connected and contact resistances.
Four identical MEMS clamped beams 14 lie in a horizontal plane in respectively the front and back two of planar spiral inductor 2 between twoSide. Each MEMS clamped beam 14 across every lead-in wire 12 ends salient point 13 above, wherein each MEMSClamped beam 14 Liang Gemao districts are positioned on the CPW ground wire of phase the same side. Below each MEMS clamped beam 14A drive electrode 15 is placed respectively in the both sides of lead-in wire 12, and wherein two drive electrodes 15 interconnect and lead toCrossing a connecting line 16 is connected with the press welding block 17 of CPW ground outside; Below MEMS clamped beam 14On drive electrode 15, cover Si3N4Insulating medium layer 11.
Press welding block 17 and its MEMS clamped beam that drive electrode 15 below MEMS clamped beam 14 is connectedThe CPW ground wire that 14Mao district is connected has formed two direct-flow input ends, for applying MEMS clamped beam 14Driving voltage.
Air bridges 18 is connected the CPW ground wire that line 16 separates, the connection below air bridges 18 for interconnectingOn line 16, cover Si3N4Insulating medium layer 11.
In frame for movement, CPW1, planar spiral inductor 2, MIM electric capacity, lead-in wire 12, salient point 13, MEMSClamped beam 14, drive electrode 15, connecting line 16, press welding block 17 and air bridges 18 are produced on same arsenicChange on gallium substrate 19.
The clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present invention, by two parallel connectionsBe connected to a MIM electric capacity 3 and the 2nd MIM electric capacity 4 and two strings between CPW holding wire and ground wireConnection be connected to the 3rd MIM electric capacity 5 of CPW holding wire and the 4th MIM electric capacity 6 successively symmetry be placed on oneThe left and right sides of planar spiral inductor 2; By the 5th MIM electric capacity 7, the 6th that four are connected by lead-in wireMIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 symmetries are placed on planar spiral inductor 2The left and right sides and at two MIM electric capacity 3 and that are parallel-connected between CPW holding wire and ground wireBetween two MIM electric capacity 4, simultaneously two of any side of the left and right sides of planar spiral inductor 2 by drawingThe 5th MIM electric capacity 7 and the 7th MIM electric capacity 9 that line connects, or the 6th MIM electric capacity 8 and the 8th MIM electric capacity10 place along the front and back bilateral symmetry of CPW holding wire; These four by lead-in wire connect the 5th MIM electric capacity 7,The 6th MIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 have respectively different capacitances;Each MIM electric capacity being connected by lead-in wire 12 is connected in series by a lead-in wire, wherein every lead-in wire 12One end is connected with CPW holding wire, and the other end is made a salient point near CPW ground wire and on its end13; Above the salient point 13 of every lead-in wire 12 ends, across a MEMS clamped beam 14, this MEMS is solidStrutbeam 14 Liang Gemao districts are positioned on the CPW ground wire of phase the same side, below each MEMS clamped beam 14, drawDrive electrode 15 is placed in the both sides of line 12; On drive electrode 15, cover Si3N4Insulating medium layer 11. WhenDo not apply driving voltage between four MEMS clamped beams 14 and drive electrode separately 15 time, fourMEMS clamped beam 14 is all in UP state, i.e. all protruding with its below lead-in wire 12 not of each MEMS clamped beam 14Point 13 contacts, now four the 5th MIM electric capacity 7 being connected by lead-in wire, the 6th MIM electric capacity 8, the 7thMIM electric capacity 9 is not all connected with CPW ground wire with the 8th MIM electric capacity 10, at planar spiral inductor 2The MIM capacitance size in parallel of the left and right sides does not all change, thereby has realized this reconfigurable microwave bandpass filteringThe centre frequency of first state of device and bandwidth; When only driving with corresponding at a MEMS clamped beam 14Between electrode 15, apply driving voltage, this MEMS clamped beam 14 in DOWN state and other three do not executeAdd the MEMS clamped beam 14 of driving voltage still in UP state, only have a MEMS clamped beam 14 with its underThe salient point 13 of side lead-in wire 12 contacts, now in the left side of planar spiral inductor 2 or of right side by drawingThe MIM electric capacity that line connects is connected with CPW ground wire, has changed left side or the right side at planar spiral inductor 2The size of the MIM electric capacity in parallel of side, again because four of the left and right sides that are positioned at planar spiral inductor 2 by drawingThe 5th MIM electric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 that line connectsThere is respectively different capacitances, thereby realized second, the 3rd of this reconfigurable microwave bandpass filterCentre frequency and the bandwidth of individual, the 4th and the 5th state; When any two MEMS clamped beam 14 HesBetween corresponding drive electrode 15, apply driving voltage, these two MEMS clamped beams 14 in DOWN state andTwo other MEMS clamped beam 14 that does not apply driving voltage, still in UP state, has two MEMS solidStrutbeam 14 contacts with the salient point 13 of its below lead-in wire 12, now in two of the left side of planar spiral inductor 2Two of individual or right side or each side the MIM electric capacity being connected by lead-in wire be connected with CPW ground wireConnect, changed in the left side of planar spiral inductor 2 or the MIM electric capacity in parallel of right side or the left and right sides largeLittle, again because these four the 5th MIM electric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electricity that connected by lead-in wireAppearance 9 and the 8th MIM electric capacity 10 have respectively different capacitances, thereby it is logical to have realized this reconfigurable microwave bandThe 6th, the 7th, the 8th, the 9th, the tenth and the center frequency of the 11 state of wave filterRate and bandwidth; When applying and drive electricity between any three MEMS clamped beams 14 and corresponding drive electrode 15Press, these three MEMS clamped beams 14 are in DOWN state and another one does not apply the MEMS of driving voltageClamped beam 14, still in UP state, has the salient point 13 of three MEMS clamped beams 14 and its below lead-in wire 12Contact, now at two of the left side of planar spiral inductor 2 and right side one or right side two andThe MIM electric capacity being connected by lead-in wire in left side is connected with CPW ground wire, has changed at snail electricityThe size of the MIM electric capacity in parallel of the left and right sides of sense 2, again because these four the 5th MIM that connected by lead-in wireElectric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 have respectively differentCapacitance, thus realize the 12, the 13, the 14 of this reconfigurable microwave bandpass filterCentre frequency and the bandwidth of individual and the 15 state; When in four MEMS clamped beams 14 and driving separatelyWhile all applying driving voltage between electrode 15, four MEMS clamped beams 14 are all in DOWN state, fourMEMS clamped beam 14 all contacts with the salient point 13 of its below lead-in wire 12, now at planar spiral inductor 2Four of the left and right sides the 5th MIM electric capacity 7, the 6th MIM electric capacity 8, the 7th MIM electricity that connected by lead-in wireHold 9 and be all connected with CPW ground wire with the 8th MIM electric capacity 10, changed the left side at planar spiral inductor 2The size of the MIM electric capacity in parallel of right both sides, thus realize the 16 of this reconfigurable microwave bandpass filterThe centre frequency of individual state and bandwidth.
The preparation method of the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics of the present invention is:
1) prepare gallium arsenide substrate 19: selecting semi-insulating GaAs is substrate;
2) in gallium arsenide substrate 19, apply photoresist, remove preparation and make the salient point 13 being positioned on lead-in wire 12The photoresist at place;
3) sputter gold germanium nickel/gold in gallium arsenide substrate 19, its thickness is altogether
4) peel off and remove step 2) in the photoresist that stays, relatedly removed the gold germanium nickel/gold on photoresist,Begin to take shape the salient point 13 on lead-in wire 12;
5) in the gallium arsenide substrate 19 obtaining in step 4), apply photoresist, remove preparation making and be positioned at lead-in wireThe photoresist at salient point 13 places on 12;
6) sputter tantalum nitride in gallium arsenide substrate 19;
7) photoresist lift off staying in step 5) is removed, the tantalum nitride above related removal photoresist,Again begin to take shape the salient point 13 on lead-in wire 12;
8) in gallium arsenide substrate 19, apply photoresist, removal preparation making CPW1, planar spiral inductorThe bottom crown of the passage 2-1 of lower floor, MIM electric capacity, lead-in wire 12, salient point 13, drive electrode 15, connecting line 16And the photoresist in press welding block 17 places;
9) in gallium arsenide substrate 19 by the evaporation mode titanium/platinum/gold/titanium of growing, its thickness is altogether0.44μm；
10) photoresist that step 8) stayed is removed, and has relatedly removed the titanium/platinum/gold/titanium above photoresist,Begin to take shape CPW1 and press welding block 17, and be completed into the passage 2-1 of lower floor, the MIM of planar spiral inductorBottom crown, lead-in wire 12, salient point 13, drive electrode 15 and the connecting line 16 of electric capacity;
11) deposit photoetching Si3N4Insulating medium layer 11: in the gallium arsenide substrate 19 obtaining in step 10),By plasma-enhanced chemical vapor deposition process growth one deckThick Si3N4Insulating medium layer 11,Photoetching Si3N4Insulating medium layer 11, is retained in the passage 2-1 of lower floor of planar spiral inductor, the lower floor of MIM electric capacitySi on pole plate, drive electrode 15 and connecting line 163N4Insulating medium layer 11;
12) deposit photoetching polyimide sacrificial layer: in the gallium arsenide substrate 19 obtaining in preceding step processingApply the thick polyimide sacrificial layer of 1.6 μ m, photoetching polyimide sacrificial layer, only retains planar spiral inductorThe polyimide sacrificial layer of coil 2-2, MEMS clamped beam 14 and air bridges 18 belows;
13) grow for the down payment of electroplating by evaporation mode: evaporation titanium/gold/titanium, as down payment, it is thickDegree is 500/1500/300
14) in the gallium arsenide substrate 19 obtaining in step 13), apply photoresist, removal preparation making CPW1,The coil 2-2 of planar spiral inductor, the top crown of MIM electric capacity, MEMS clamped beam 14, air bridges 18 and pressureThe photoresist in welding block 17 places;
15) electroplate layer of gold, its thickness is 2 μ m;
16) remove the photoresist staying in step 14);
17) anti-carve titanium/gold/titanium, corrosion down payment, coil 2-2, the MIM of formation CPW1, planar spiral inductorTop crown, MEMS clamped beam 14, air bridges 18 and the press welding block 17 of electric capacity;
18) discharge polyimide sacrificial layer: developer solution soaks, remove coil 2-2, the MEMS of planar spiral inductorThe polyimide sacrificial layer of clamped beam 14 and air bridges 18 belows, deionized water is soaked slightly, absolute ethyl alcoholDehydration, volatilizees under normal temperature, dries.
Whether distinguish is that the standard of this structure is as follows: the clamped beam type 16 state restructurals of micromechanics of the present inventionMicrowave band-pass filter, by two MIM electric capacity 3 that are parallel-connected between CPW holding wire and ground wireBe connected in series to the 3rd MIM electric capacity 5 and the 4th MIM of CPW holding wire with the 2nd MIM electric capacity 4 and twoElectric capacity 6 is the symmetrical left and right sides that is placed on a planar spiral inductor 2 successively, has small electric thereby utilizeThe planar spiral inductor of sensibility reciprocal has formed the π type with bandpass characteristics with the MIM electric capacity with small electric capacitanceThe microwave band-pass filter of topological structure; By the 5th MIM electric capacity 7, the 6th that four are connected by lead-in wireMIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 symmetries are placed on a planar spiral inductor 2The left and right sides and two MIM electric capacity 3 Hes that are parallel-connected between CPW holding wire and ground wireBetween the 2nd MIM electric capacity 4, simultaneously two of any side of the left and right sides of planar spiral inductor 2 byThe 5th MIM electric capacity 7 and the 7th MIM electric capacity 9 that lead-in wire connects, or the 6th MIM electric capacity 8 and the 8th MIMElectric capacity 10 is placed along the front and back bilateral symmetry of CPW holding wire; These four the 5th MIM electric capacity that connected by lead-in wire7, the 6th MIM electric capacity 8, the 7th MIM electric capacity 9 and the 8th MIM electric capacity 10 have respectively different capacitances;Each MIM electric capacity being connected by lead-in wire 12 is connected in series by a lead-in wire, wherein every lead-in wire 12One end is connected with CPW holding wire, and the other end is made a salient point near CPW ground wire and on its end13; Above the salient point 13 of every lead-in wire 12 ends, across a MEMS clamped beam 14, this MEMS is solidStrutbeam 14 Liang Gemao districts are positioned on the CPW ground wire of phase the same side, below each MEMS clamped beam 14, drawDrive electrode 15 is placed in the both sides of line 12, has 16 states thereby realize this reconfigurable microwave bandpass filterCentre frequency and the change of bandwidth; On drive electrode 15, cover Si3N4Insulating medium layer 11; Meet withThe structure of upper condition is considered as the clamped beam type 16 state reconfigurable microwave bandpass filterings of micromechanics of the present inventionDevice.
Claims (4)
1. the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics, is characterized in that:CPW (1), a planar spiral inductor (2), two that gallium arsenide substrate (19) is provided with horizontal positioned are alsoConnection is connected to a MIM electric capacity (3) and the 2nd MIM electric capacity (4), two between CPW holding wire and ground wireThe 3rd MIM electric capacity (5) of the individual CPW of being connected in series to holding wire and the 4th MIM electric capacity (6), four by drawingThe 5th MIM electric capacity (7), the 6th MIM electric capacity (8), the 7th MIM electric capacity (9) and the 8th MIM that line connectsElectric capacity (10), lead-in wire (12), salient point (13), MEMS clamped beam (14), drive electrode (15), connectionLine (16), press welding block (17) and air bridges (18); The centre of CPW (1) is CPW holding wire, CPWThe both sides of holding wire are CPW ground wire, two MIM that are parallel-connected between CPW holding wire and ground wireElectric capacity (3) and the 2nd MIM electric capacity (4) and two are connected in series to the 3rd MIM electric capacity of CPW holding wire(5) the and four MIM electric capacity (6) successively symmetry is placed on the left and right sides of planar spiral inductor (2), structureBecome the microwave band-pass filter of π type; Four the 5th MIM electric capacity (7), the 6th MIM electric capacity that connected by lead-in wire(8), the 7th MIM electric capacity (9) and the 8th MIM electric capacity (10) symmetry are placed on planar spiral inductor (2)The left and right sides and at two MIM electric capacity (3) that are parallel-connected between CPW holding wire and ground wireWith the 2nd between MIM electric capacity (4), simultaneously in any side of the left and right sides of planar spiral inductor (2)Two the 5th MIM electric capacity (7) and the 7th MIM electric capacity (9) that connected by lead-in wire, or the 6th MIM electric capacity (8)Place along the front and back bilateral symmetry of CPW holding wire with the 8th MIM electric capacity (10); Each by lead-in wire connectMIM electric capacity is connected in series by a lead-in wire (12), wherein one end of every lead-in wire (12) and CPW letterNumber line is connected, and the other end is made a salient point (13) near CPW ground wire and on its end; At everySalient point (13) top of lead-in wire (12) end is across a MEMS clamped beam (14), at each MEMSA drive electrode (15) is placed respectively in the both sides of clamped beam (14) below lead-in wire (12); At each MEMSTwo drive electrodes of clamped beam (14) below interconnect and pass through a connecting line (16) and CPW ground wireThe press welding block (17) in outside is connected; Thereby by utilizing the microwave band-pass filter of a π type and fourMEMS clamped beam (14) is controlled respectively four the 5th MIM electric capacity (7), the 6th MIM electricity that are connected by lead-in wireWhether appearance (8), the 7th MIM electric capacity (9) are connected with CPW ground wire with the 8th MIM electric capacity (10), realThe centre frequency of 16 states and the change of bandwidth of this reconfigurable microwave bandpass filter are showed;
Described the 5th MIM electric capacity (7), the 6th MIM electric capacity (8), the 7th MIM electric capacity (9) and the 8thMIM electric capacity (10) has respectively different capacitances.
2. the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics according to claim 1,It is characterized in that: planar spiral inductor (2) is positioned at the middle part of this reconfigurable microwave bandpass filter; FlatSurface helix inductance (2) comprises coil (2-2) and lower floor's passage (2-1) two parts of inductance; SnailThe coil (2-2) of inductance is suspended on gallium arsenide substrate (19), and lower floor's passage (2-1) is positioned at arsenicOn gallium substrate (19); The external lug of the coil (2-2) of inductance is connected and its inside with CPW holding wireJoint is connected with lower floor passage (2-1); The other end of lower floor's passage (2-1) is connected with CPW holding wire;The upper Si that covers of lower floor's passage (2-1) below the coil (2-2) of planar spiral inductor3N4Insulating medium layer(11)。
3. the clamped beam type 16 state reconfigurable microwave bandpass filters of micromechanics according to claim 1,It is characterized in that: the number of MEMS clamped beam (14) is 4; Wherein, the two ends of each MEMS clamped beamBe fixed on the CPW ground wire of phase the same side of CPW holding wire by Liang Gemao district respectively; At MEMS clamped beam(14) the upper Si that covers of below drive electrode (15)3N4Insulating medium layer (11).
4. according to the logical filter of the clamped beam type 16 state reconfigurable microwave bands of the micromechanics described in claim 1 or 3Ripple device, is characterized in that: described MEMS clamped beam (14), whether this MEMS clamped beam is with thereunderThe salient point (13) of lead-in wire on (12) contact control respectively four the 5th MIM electric capacity (7) that connected by lead-in wire,The 6th MIM electric capacity (8), the 7th MIM electric capacity (9) and the 8th MIM electric capacity (10) whether with CPW ground wireBe connected.
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