CN103795365B - Micromechanics clamped beam type four state reconfigurable microwave band filter and preparation method - Google Patents
Micromechanics clamped beam type four state reconfigurable microwave band filter and preparation method Download PDFInfo
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- CN103795365B CN103795365B CN201410052170.4A CN201410052170A CN103795365B CN 103795365 B CN103795365 B CN 103795365B CN 201410052170 A CN201410052170 A CN 201410052170A CN 103795365 B CN103795365 B CN 103795365B
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Abstract
The micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention, gallium arsenide substrate (20) is provided with the CPW(1 of horizontal positioned), one planar spiral inductor (2), the first MIM capacitor (3) that two are parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4), two the 3rd MIM capacitor (5) being connected in series to CPW holding wire and the 4th MIM capacitor (6), four the 5th MIM capacitor (7) connected by lead-in wire, 6th MIM capacitor (8), 7th MIM capacitor (9) and the 8th MIM capacitor (10), oneth MEMS clamped beam (14) and the 2nd MEMS clamped beam (15)；When the salient point (13) of MEMS clamped beam with two lead-in wires (12) below contacts, the MIM capacitor connected by lead-in wire of both sides before and after CPW holding wire can be made to be connected with CPW ground wire, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor, it is achieved that there is the mid frequency of four states and the change of bandwidth.
Description
Technical field
The present invention proposes micromechanics clamped beam type four state reconfigurable microwave band filter and preparation method, belongs to the technical field of microelectromechanical systems (MEMS).
Background technology
In microwave telecommunication system, reconfigurable filter is the important component part realizing reconfigurable microwave transmitting-receiving subassembly front-end circuit.In recent years, along with the fast development of microwave integrated circuit and MEMS technology, by utilizing micromachined and easy and traditional IC process compatible feature, it is possible to produce high performance upper passive inductance.It is said that in general, the quality factor of parallel plate capacitor are higher on sheet, and occupy less chip area compared with inductance.Owing to passive inductance and electric capacity are to realize the simplest method of plate upper filter, thus the microwave LC passive filter based on MEMS technology is possible not only to accurately select and reconfiguration frequency, and can be greatly enhanced level of integrated system, reduce cost of manufacture.But, existing restructural LC microwave filter needs multiple inductance when realizing the change of multiple mid frequency and bandwidth, and inductance value is relatively big, this increases not only size and increases conductor and the substrate loss of parasitism.In order to meet the development of current miniature microwave communication system, modern microwave transmitting-receiving subassembly front-end circuit requires to adopt a planar spiral inductor and several parallel plate capacitor to constitute reconfigurable microwave band filter, is capable of the mid frequency of four states and the change of bandwidth simultaneously.Nowadays MEMS fixed beam structure is conducted in-depth research, make the clamped beam type four state reconfigurable microwave band filter realizing above-mentioned functions based on MEMS technology be possibly realized.
Summary of the invention
Technical problem: in order to overcome the deficiencies in the prior art, the invention provides a kind of clamped beam type four state reconfigurable microwave band filter based on MEMS technology and preparation method, realize this reconfigurable microwave band filter and there is the mid frequency of four states and the change of bandwidth, there is less chip area, improve integrated level.
Technical scheme: the present invention by being respectively symmetrically two metal-insulator-metal (MIM) parallel plate capacitors of placement in the left and right sides of planar spiral inductor, two MIM capacitor in any side of the left and right sides of planar spiral inductor are placed along the front and back lateral symmetry of co-planar waveguide (CPW) holding wire and have different capacitance size, two MIM capacitor in any side of the both sides, front and back of CPW holding wire have identical capacitance size being connected in series respectively through two lead-in wires and are transitioned near CPW ground wire and close to each other, end at every lead-in wire makes a salient point, and across a MEMS clamped beam above the salient point of two lead terminal close to each other of any side of the both sides, front and back of CPW holding wire, the Liang Gemao district of each MEMS clamped beam is respectively positioned on the CPW ground wire of phase the same side, below each MEMS clamped beam, drive electrode is placed in the outside of two lead-in wires close to each other；By applying driving voltage between MEMS clamped beam and drive electrode so that MEMS clamped beam contacts with salient point thereunder, thus realizing this reconfigurable microwave band filter have the mid frequency of four states and the change of bandwidth；This micromechanics clamped beam type four state reconfigurable microwave band filter is because adopting a planar spiral inductor.
The present invention is a kind of micromechanics clamped beam type four state reconfigurable microwave band filter, this wave filter is produced in gallium arsenide substrate, has the CPW of horizontal positioned, a planar spiral inductor, two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor, two the 3rd MIM capacitor being connected in series to CPW holding wire and the 4th MIM capacitor, four the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor, a MEMS clamped beam and the 2nd MEMS clamped beams connected by going between in gallium arsenide substrate；The centre of CPW is CPW holding wire, the both sides of CPW holding wire are CPW ground wire, planar spiral inductor is positioned at the middle part of this reconfigurable microwave band filter, the coil of planar spiral inductor is maked somebody a mere figurehead lower channel on gallium arsenide substrate and is positioned in gallium arsenide substrate, and the lower channel below the coil of planar spiral inductor covers Si3N4Insulating medium layer；Two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor are symmetrically positioned in the left and right sides at planar spiral inductor；Two the 3rd MIM capacitor being connected in series to CPW holding wire and the 4th MIM capacitor are symmetrically positioned in the left and right sides of planar spiral inductor equally；Four left and right sides being not only symmetrically disposed at planar spiral inductor by the 5th MIM capacitor of lead-in wire connection, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor, and be located between two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor；The upper bottom crown of all MIM capacitor is each through Si3N4Insulating medium layer separates；Oneth MEMS clamped beam and the 2nd MEMS clamped beam are individually positioned in the both sides, front and back of planar spiral inductor；Thereby through a planar spiral inductor, two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor and two the 3rd MIM capacitor being connected in series to CPW holding wire, 4th MIM capacitor constitutes the microwave band-pass filter of π type, and utilize the microwave band-pass filter of this π type and a MEMS clamped beam and the 2nd MEMS clamped beam to control four the 5th MIM capacitor connected by lead-in wire respectively, 6th MIM capacitor, 7th MIM capacitor and the 8th MIM capacitor, achieve the mid frequency of four states of this reconfigurable microwave band filter and the change of bandwidth.
One end of described every lead-in wire is connected with CPW holding wire, and the other end gone between is close to CPW ground wire and has a salient point on end；On front side of CPW holding wire two lead-in wires CPW ground wire on front side of planar spiral inductor respectively is close and close to each other, and the CPW ground wire on rear side of planar spiral inductor respectively that goes between of two on rear side of CPW holding wire is close and close to each other.
Across a MEMS clamped beam or the 2nd MEMS clamped beam above the salient point of the lead terminal two articles close to each other of any side of the both sides, front and back of CPW holding wire, the Liang Gemao district of each MEMS clamped beam or the 2nd MEMS clamped beam is respectively positioned on the CPW ground wire of phase the same side；Drive electrode is placed in the outside of lead-in wire two articles close to each other below a MEMS clamped beam and the 2nd MEMS clamped beam, and this drive electrode is connected with the press welding block of CPW ground outside by a connecting line；Drive electrode below a MEMS clamped beam and the 2nd MEMS clamped beam covers Si3N4Insulating medium layer；Air bridges, for interconnecting connected line CPW ground wire separately, the connecting line below air bridges covers Si3N4Insulating medium layer.
Two of any side the 5th MIM capacitor connected by lead-in wire in the left and right sides of planar spiral inductor and the 7th MIM capacitor or the 6th MIM capacitor and the 8th MIM capacitor are placed along the front and back lateral symmetry of CPW holding wire, and have different capacitance size；And two of any side the 5th MIM capacitor connected by lead-in wire in the both sides, front and back of CPW holding wire and the 6th MIM capacitor, or the 7th MIM capacitor and the 8th MIM capacitor have identical capacitance size.
In frame for movement, CPW, planar spiral inductor, MIM capacitor, lead-in wire, salient point, MEMS clamped beam, drive electrode, connecting line, press welding block and air bridges are produced on same GaAs substrate.
The micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention is by four MIM capacitor that by lead-in wire connect symmetrically placed in the left and right sides of planar spiral inductor, and these four MIM capacitor connected by lead-in wire are between two MIM capacitor in parallel being symmetrically disposed at the planar spiral inductor left and right sides；Two of any side MIM capacitor connected by lead-in wire in the left and right sides of planar spiral inductor are placed along the front and back lateral symmetry of CPW holding wire, and have different capacitance size；And two of any side MIM capacitor connected by lead-in wire in the both sides, front and back of CPW holding wire have an identical capacitance size, and being connected in series respectively through two lead-in wires and be transitioned near CPW ground wire and close to each other, the end at every lead-in wire makes a salient point；Across a MEMS clamped beam above the salient point of two lead terminal close to each other of any side of the both sides, front and back of CPW holding wire, the Liang Gemao district of each MEMS clamped beam is respectively positioned on the CPW ground wire of phase the same side, below each MEMS clamped beam, drive electrode is placed in the outside of two lead-in wires close to each other, covers Si on drive electrode3N4Insulating medium layer.When not applying driving voltage between two MEMS clamped beams and respective drive electrode, two MEMS clamped beams are in UP state, namely each MEMS clamped beam does not all contact with the salient point of below two lead-in wires, now four MIM capacitor connected by lead-in wire are not all connected with CPW ground wire, then all do not change in the MIM capacitor size in parallel of the left and right sides of planar spiral inductor, it is achieved thereby that the mid frequency of the first of this microwave band-pass filter state and bandwidth；When only applying driving voltage between a MEMS clamped beam and corresponding drive electrode, this MEMS clamped beam is in DOWN state and another does not apply the MEMS clamped beam of driving voltage still in UP state, namely only have a MEMS clamped beam to contact with the salient point of two lead-in wires below, now it is connected with CPW ground wire in two MIM capacitor connected by lead-in wire of the front side of CPW holding wire or rear side, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor, again because the MIM capacitor of the both sides, front and back being positioned at CPW holding wire has different capacitance size, it is achieved thereby that the mid frequency of the second of this microwave band-pass filter and the 3rd state and bandwidth；When all applying driving voltage between two MEMS clamped beams and respective drive electrode, two MEMS clamped beams are in DOWN state, namely two MEMS clamped beams all contact with the salient point of two lead-in wires below, now all it is connected with CPW ground wire two of any side of the both sides, front and back of the CPW holding wire MIM capacitor connected by lead-in wire, then increase the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor, it is achieved thereby that the mid frequency of the 4th of this microwave band-pass filter the state and bandwidth.
The preparation method of the micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention is:
1) gallium arsenide substrate is prepared: selection semi-insulating GaAs is substrate；
2) on substrate, it is coated with photoresist, removes preparation and make the photoresist at the salient point place being positioned on lead-in wire；
3) sputtering gold germanium ni au on substrate, its thickness is altogether
4) peel off removal step 2) in the photoresist that stays, the related gold germanium ni au eliminated on photoresist, preliminarily form the salient point on lead-in wire；
5) on the substrate that step 4) obtains, it is coated with photoresist, removes preparation and make the photoresist at the salient point place being positioned on lead-in wire；
6) on substrate, tantalum nitride is sputtered；
7) photoresist lift off stayed in step 5) is removed, the tantalum nitride above related removal photoresist, again preliminarily form the salient point on lead-in wire；
8) in gallium arsenide substrate, it is coated with photoresist, removes preparation and make the photoresist that CPW, the lower channel of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire, salient point, drive electrode, connecting line and press welding block are local；
9) growing titanium/platinum/gold/titanium by evaporation mode on substrate, its thickness is 0.44 μm altogether；
10) photoresist step 8) stayed is removed, related titanium/platinum/gold/the titanium eliminated above photoresist, preliminarily form CPW and press welding block, and form the lower channel of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire, salient point, drive electrode and connecting line completely；
11) deposit photoetching Si3N4Insulating medium layer: in the gallium arsenide substrate that step 10) obtains, grows one layer by plasma-enhanced chemical vapor deposition processThick Si3N4Insulating medium layer, photoetching Si3N4Insulating medium layer, is retained in the Si on the lower channel of planar spiral inductor, lower floor's pole plate of MIM capacitor, drive electrode and connecting line3N4Insulating medium layer；
12) deposit photoetching polyimide sacrificial layer: process the polyimide sacrificial layer being coated with 1.6 μ m-thick in the gallium arsenide substrate obtained in preceding step, photoetching polyimide sacrificial layer, only retains the polyimide sacrificial layer below the coil of planar spiral inductor, MEMS clamped beam and air bridges；
13) down payment electroplated it is used for by evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is
14) in the gallium arsenide substrate that step 13) obtains, it is coated with photoresist, removes preparation and make the photoresist that CPW, the coil of planar spiral inductor, the top crown of MIM capacitor, MEMS clamped beam, air bridges and press welding block are local；
15) one layer of gold of plating, its thickness is 2 μm；
16) removal step 14) in the photoresist that stays；
17) anti-carve titanium/gold/titanium, corrode down payment, form CPW, the coil of planar spiral inductor, the top crown of MIM capacitor, MEMS clamped beam, air bridges and press welding block；
18) release polyimide sacrificial layer: developer solution soaks, removes the polyimide sacrificial layer below the coil of planar spiral inductor, MEMS clamped beam and air bridges, and deionized water soaks slightly, dehydrated alcohol dehydration, volatilizees, dry under room temperature.
Beneficial effect: the micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention, breach reconfigurable microwave LC band filter on tradition sheet and must adopt multiple restriction with the relatively on-chip inductor of big inductance quantity, achieve and constitute bandpass characteristics merely with a planar spiral inductor and four MIM capacitor, and achieved the mid frequency of four states and the change of bandwidth by two MEMS clamped beams.And, this reconfigurable microwave band filter has low loss, good Out-of-band rejection, wide band tuning, little chip area, high integrated level and the advantage compatible with GaAs single-chip microwave integration circuit.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of micromechanics clamped beam type four state reconfigurable microwave band filter；
Fig. 2 is the A-A profile of micromechanics clamped beam type four state reconfigurable microwave band filter；
Fig. 3 is the B-B profile of micromechanics clamped beam type four state reconfigurable microwave band filter；
Figure includes: CPW1, planar spiral inductor 2, lower channel 2-1, coil 2-2, the first MIM capacitor 3, the second MIM capacitor 4, the 3rd MIM capacitor 5, the 4th MIM capacitor 6, the 5th MIM capacitor 7, the 6th MIM capacitor 8, the 7th MIM capacitor 9, the 8th MIM capacitor 10, Si3N4Insulating medium layer 11, lead-in wire 12, salient point the 13, the oneth MEMS clamped beam 14, the 2nd MEMS clamped beam 15, drive electrode 16, connecting line 17, press welding block 18, air bridges 19, gallium arsenide substrate 20.
Detailed description of the invention
The specific embodiments of the micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention is as follows:
Gallium arsenide substrate 20 is provided with the CPW1 that port diagnostic impedance is 50 Ω, one planar spiral inductor 2, two the first MIM capacitor 3 and the second MIM capacitor 4 being parallel-connected between CPW holding wire and ground wire, two the 3rd MIM capacitor 5 and the 4th MIM capacitor 6 being connected in series to CPW holding wire, four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9, 8th MIM capacitor 10, lead-in wire 12, salient point 13, oneth MEMS clamped beam 14, 2nd MEMS clamped beam 15, drive electrode 16, connecting line 17, press welding block 18 and air bridges 19:
CPW1 is made up of three lines in the same plane, and the wherein centrally located holding wire that a line is CPW is positioned at the two lines of both sides and is the ground wire of CPW；CPW1 horizontal positioned on a substrate 20, is used for realizing the transmission of microwave signal and the electrical connection of planar spiral inductor 2 and MIM capacitor.For the ease of the measurement of instrument, the port diagnostic impedance of this CPW1 is designed to 50 Ω.
Planar spiral inductor 2 is positioned at the middle part of this reconfigurable microwave band filter, its coil 2-2 mainly including inductance and lower channel 2-1 two parts.Wherein, the coil 2-2 of planar spiral inductor is suspended on GaAs substrate 20, and lower channel 2-1 is positioned on GaAs substrate 20；The external lug of inductance coil 2-2 is connected with CPW1 holding wire and its internal connection is connected with lower channel 2-1；The other end of lower channel 2-1 is connected with CPW holding wire.Lower channel 2-1 below the coil 2-2 of planar spiral inductor covers Si3N4Insulating medium layer 11.
Two the first MIM capacitor 3 being parallel-connected between CPW holding wire and ground wire, the second MIM capacitor 4 is symmetrically positioned in the left and right sides of planar spiral inductor 2.Wherein, the bottom crown of this each MIM capacitor is connected with CPW ground wire, and its top crown is connected with CPW holding wire, is Si between upper bottom crown3N4Insulating medium layer 11.
Two the 3rd MIM capacitor 5 being connected in series to CPW holding wire, the 4th MIM capacitor 6 is symmetrically positioned in the left and right sides of planar spiral inductor 2 equally.Wherein, Si is passed through between the upper bottom crown of this each MIM capacitor3N4Insulating medium layer 11 separates.
The first MIM capacitor 3 that one planar spiral inductor 2, two is parallel-connected between CPW holding wire and ground wire, second MIM capacitor 4 and two the 3rd MIM capacitor 5 being connected in series to CPW holding wire, the 4th MIM capacitor 6 constitutes the basic structure of this microwave band-pass filter.This structure is a π type topological structure with bandpass characteristics.Wherein, the change of planar spiral inductor 2 size mainly makes the mid frequency of this microwave band-pass filter offset；Two the first MIM capacitor 3 in parallel, the change of the second MIM capacitor 4 size mainly makes the mid frequency of this microwave band-pass filter skew occur and change the bandwidth of its band filter；3rd MIM capacitor 5 of two series connection, the main bandwidth changing this microwave band-pass filter of change of the 4th MIM capacitor 6 size.
Four the 5th MIM capacitor 7 connected by lead-in wire, the 6th MIM capacitor 8, the 7th MIM capacitor 9,8th MIM capacitor 10, not only it is symmetrically disposed at the left and right sides of planar spiral inductor 2, and is located at those two the first MIM capacitor 3 being connected in parallel, between the second MIM capacitor 4；Wherein, two the 5th MIM capacitor 7 and the 7th MIM capacitor 9 connected by lead-in wire in any side of the left and right sides of planar spiral inductor 2, or the 6th MIM capacitor 8 and the 8th MIM capacitor 10, it is symmetrically disposed at the both sides, front and back of CPW holding wire, and two of any side of both sides the 5th MIM capacitor 7 and the 6th MIM capacitor 8 connected by lead-in wire before and after CPW holding wire, or the 7th MIM capacitor 9 and the 8th MIM capacitor 10, there is identical capacitance size.
Lead-in wire 12 is four, and wherein every lead-in wire 12 is connected in series the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 or the 8th MIM capacitor 10 connected by lead-in wire respectively, each by the upper bottom crown of the MIM capacitor of lead-in wire 12 connection each through Si3N4Insulating medium layer 11 separates.One end of every lead-in wire 12 is connected with CPW holding wire, and go between 12 the other end close to CPW ground wire and there is a salient point 13 on end.On front side of CPW holding wire two lead-in wires 12 CPW ground wire on front side of planar spiral inductor 2 respectively is close and close to each other, and two on rear side of CPW holding wire go between 12, and CPW ground wire on rear side of planar spiral inductor 2 is close and close to each other respectively.
Salient point 13 lays respectively on the end of every lead-in wire 12, for reducing the driving voltage that MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 is connected with lead-in wire 12 because of electrostatic force.
Oneth MEMS clamped beam the 14, the 2nd MEMS clamped beam 15 is individually positioned in rear side and the front side of planar spiral inductor 2.Oneth MEMS clamped beam 14 and the 2nd MEMS clamped beam 15 are respectively across on rear side of CPW holding wire and above the salient point 13 of two articles of lead-in wire 12 ends of front side, and wherein the Liang Gemao district of MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 is all located on the CPW ground wire of phase the same side.Below MEMS clamped beam the 14, a 2nd MEMS clamped beam 15, the outside of two lead-in wires 12 close to each other placed two drive electrodes 16, and two of which drive electrode 16 is connected with each other and passes through a connecting line 17 and is connected with the press welding block 18 of CPW ground outside；Drive electrode 16 below a MEMS clamped beam 14 and the 2nd MEMS clamped beam 15 covers Si3N4Insulating medium layer 11.
The CPW ground wire that the press welding block 18 that drive electrode 16 below MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 is connected is connected with the anchor district of its MEMS clamped beam constitutes two direct-flow input ends, for applying the driving voltage of MEMS clamped beam the 14, a 2nd MEMS clamped beam 15.
Air bridges 19, for interconnecting connected line 17 CPW ground wire separately, the connecting line 17 below air bridges 19 covers Si3N4Insulating medium layer 11.
In frame for movement, CPW1, planar spiral inductor 2, MIM capacitor, lead-in wire 12, salient point the 13, the oneth MEMS clamped beam the 14, the 2nd MEMS clamped beam 15, drive electrode 16, connecting line 17, press welding block 18 and air bridges 19 are produced on same GaAs substrate 20.
The micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention is by four fiveth MIM capacitor 7 and seventh MIM capacitor 9, sixth MIM capacitor 8 and eightth MIM capacitor 10 that by lead-in wire connect symmetrically placed in the left and right sides of planar spiral inductor 2, and these four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8,7th MIM capacitor 9, the 8th MIM capacitor 10 is between two that are symmetrically disposed at planar spiral inductor 2 left and right sides the first MIM capacitor 3 and the second MIM capacitor 4 in parallel；Two the 5th MIM capacitor 7 and the 7th MIM capacitor 9 connected by lead-in wire in any side of the left and right sides of planar spiral inductor 2, or the 6th MIM capacitor 8 and the 8th MIM capacitor 10, front and back lateral symmetry along CPW holding wire is placed, and has different capacitance size；And two the 5th MIM capacitor 7 and the 6th MIM capacitor 8 connected by lead-in wire of any side in the both sides, front and back of CPW holding wire, or the 7th MIM capacitor 9 and the 8th MIM capacitor 10 there is identical capacitance size, and go between respectively through two and 12 to be connected in series and be transitioned near CPW ground wire and close to each other, every go between 12 end make a salient point 13；Across one the oneth MEMS clamped beam 14 or the 2nd MEMS clamped beam 15 above the salient point 13 of lead-in wire 12 ends two articles close to each other of any side of the both sides, front and back of CPW holding wire, the Liang Gemao district of the oneth MEMS clamped beam the 14, the 2nd MEMS clamped beam 15 is respectively positioned on the CPW ground wire of phase the same side, and drive electrode 16 is placed in the outside of lead-in wire 12 two articles close to each other below MEMS clamped beam the 14, a 2nd MEMS clamped beam 15.When at a MEMS clamped beam 14, when not applying driving voltage between the 2nd MEMS clamped beam 15 and respective drive electrode 16, oneth MEMS clamped beam 14 and the 2nd MEMS clamped beam 15 are in UP state, an i.e. MEMS clamped beam 14, 2nd MEMS clamped beam 15 all contacts with the salient point 13 of below two bars of lead-in wires 12, now four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9, 8th MIM capacitor 10 is not all connected with CPW ground wire, then all do not change in the MIM capacitor size in parallel of the left and right sides of planar spiral inductor 2, it is achieved thereby that the mid frequency of the first of this microwave band-pass filter state and bandwidth；When only applying driving voltage between a MEMS clamped beam 14 or the 2nd MEMS clamped beam 15 and corresponding drive electrode 16, oneth MEMS clamped beam 14 or the 2nd MEMS clamped beam 15 are in DOWN state and another the 2nd MEMS clamped beam 15 not applying driving voltage or a MEMS clamped beam 14 still in UP state, namely only have a MEMS clamped beam 14 or the 2nd MEMS clamped beam 15 to contact with the salient point 13 of two bars of lead-in wires 12 below, now in two the 5th MIM capacitor 7 and the 6th MIM capacitor 8 connected by lead-in wire of the rear side of CPW holding wire or front side, or the 7th MIM capacitor 9 be connected with CPW ground wire with the 8th MIM capacitor 10, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor 2, again because being positioned at the 5th MIM capacitor 7 of the rear front both sides of CPW holding wire, 6th MIM capacitor 8,7th MIM capacitor 9 and the 8th MIM capacitor 10 have different capacitance size, it is achieved thereby that the mid frequency of the second of this microwave band-pass filter and the 3rd state and bandwidth；When at a MEMS clamped beam 14, when all applying driving voltage between the 2nd MEMS clamped beam 15 and respective drive electrode 16, oneth MEMS clamped beam 14, 2nd MEMS clamped beam 15 is in DOWN state, an i.e. MEMS clamped beam 14, 2nd MEMS clamped beam 15 all contacts with the salient point 13 of two bars of lead-in wires 12 below, now two of any side of the both sides, front and back of CPW holding wire the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9, 8th MIM capacitor 10 is all connected with CPW ground wire, then increase the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor 2, it is achieved thereby that the mid frequency of the 4th of this microwave band-pass filter the state and bandwidth.
The preparation method of the micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention is:
1) gallium arsenide substrate 20 is prepared: selection semi-insulating GaAs is substrate；
2) it is coated with photoresist on a substrate 20, removes preparation and make the photoresist at salient point 13 place being positioned on lead-in wire 12；
3) sputtering gold germanium ni au on a substrate 20, its thickness is altogether
4) peel off removal step 2) in the photoresist that stays, the related gold germanium ni au eliminated on photoresist, preliminarily form the salient point 13 on lead-in wire 12；
5) on the substrate 20 that step 4) obtains, it is coated with photoresist, removes preparation and make the photoresist at salient point 13 place being positioned on lead-in wire 12；
6) tantalum nitride is sputtered on a substrate 20；
7) photoresist lift off stayed in step 5) is removed, the tantalum nitride above related removal photoresist, again preliminarily form the salient point 13 on lead-in wire 12；
8) in gallium arsenide substrate 20, it is coated with photoresist, removes preparation and make the photoresist in CPW1, the lower channel 2-1 of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire 12, salient point 13, drive electrode 16, connecting line 17 and press welding block 18 place；
9) growing titanium/platinum/gold/titanium by evaporation mode on a substrate 20, its thickness is 0.44 μm altogether；
10) photoresist step 8) stayed is removed, related titanium/platinum/gold/the titanium eliminated above photoresist, preliminarily form CPW1 and press welding block 18, and form the lower channel 2-1 of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire 12, salient point 13, drive electrode 16 and connecting line 17 completely；
11) deposit photoetching Si3N4Insulating medium layer 11: in the gallium arsenide substrate 20 that step 10) obtains, grows one layer by plasma-enhanced chemical vapor deposition processThick Si3N4Insulating medium layer 11, photoetching Si3N4Insulating medium layer 11, is retained in the Si on the lower channel 2-1 of planar spiral inductor, lower floor's pole plate of MIM capacitor, drive electrode 16 and connecting line 173N4Insulating medium layer 11；
12) deposit photoetching polyimide sacrificial layer: process the polyimide sacrificial layer being coated with 1.6 μ m-thick in the gallium arsenide substrate 20 obtained in preceding step, photoetching polyimide sacrificial layer, only retains the polyimide sacrificial layer below the coil 2-2 of planar spiral inductor, MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 and air bridges 19；
13) down payment electroplated it is used for by evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is
14) in the gallium arsenide substrate 20 that step 13) obtains, it is coated with photoresist, removes preparation and make the photoresist in CPW1, the coil 2-2 of planar spiral inductor, the top crown of MIM capacitor, MEMS clamped beam the 14, a 2nd MEMS clamped beam 15, air bridges 19 and press welding block 18 place；
15) one layer of gold of plating, its thickness is 2 μm；
16) removal step 14) in the photoresist that stays；
17) anti-carve titanium/gold/titanium, corrode down payment, form CPW1, the coil 2-2 of planar spiral inductor, the top crown of MIM capacitor, MEMS clamped beam the 14, a 2nd MEMS clamped beam 15, air bridges 19 and press welding block (18)；
18) release polyimide sacrificial layer: developer solution soaks, removing the polyimide sacrificial layer below the coil 2-2 of planar spiral inductor, MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 and air bridges 19, deionized water soaks slightly, dehydrated alcohol dehydration, volatilize under room temperature, dry.
Whether distinguish is that the standard of this structure is as follows:
The micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention, by being respectively symmetrically placement the 5th MIM capacitor 7, the 6th MIM capacitor 8, the 7th MIM capacitor 9, the 8th MIM capacitor 10 in the left and right sides of planar spiral inductor 2；The 5th MIM capacitor 7 and the 7th MIM capacitor 9 in any side of the left and right sides of planar spiral inductor 2, or the 6th MIM capacitor 8 and the 8th MIM capacitor 10 place along the front and back lateral symmetry of CPW holding wire and there is different capacitance size, the 5th MIM capacitor 7 and the 6th MIM capacitor 8 in any side of the both sides, front and back of CPW holding wire, or the 7th MIM capacitor 9 and the 8th MIM capacitor 10 there is identical capacitance size and go between respectively through two articles and 12 be connected in series and be transitioned near CPW ground wire and close to each other, end at every lead-in wire 12 makes a salient point 13, and across one the oneth MEMS clamped beam 14 or the 2nd MEMS clamped beam 15 above the salient point 13 of lead-in wire 12 ends two articles close to each other of any side of the both sides, front and back of CPW holding wire, oneth MEMS clamped beam 14, the Liang Gemao district of the 2nd MEMS clamped beam 15 is respectively positioned on the CPW ground wire of phase the same side, at a MEMS clamped beam 14, drive electrode 16 is placed in the outside of lead-in wire 12 two articles close to each other below the 2nd MEMS clamped beam 15, drive electrode 16 covers Si3N4Insulating medium layer 11；By applying driving voltage between MEMS clamped beam the 14, a 2nd MEMS clamped beam 15 and drive electrode 16, oneth MEMS clamped beam the 14, the 2nd MEMS clamped beam 15 is contacted, thus realizing this reconfigurable microwave band filter have the mid frequency of four states and the change of bandwidth with salient point 13 thereunder；Meanwhile, this micromechanics clamped beam type four state reconfigurable microwave band filter, because adopting a planar spiral inductor 2, so having less chip area, improves integrated level；Namely the structure meeting conditions above is considered as the micromechanics clamped beam type four state reconfigurable microwave band filter of the present invention.
Claims (5)
1. a micromechanics clamped beam type four state reconfigurable microwave band filter, it is characterized in that: this wave filter is produced in gallium arsenide substrate (20), gallium arsenide substrate (20) is provided with CPW (1), one planar spiral inductor (2), the first MIM capacitor (3) that two are parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4), two the 3rd MIM capacitor (5) being connected in series to CPW holding wire and the 4th MIM capacitor (6), four the 5th MIM capacitor (7) connected by lead-in wire, 6th MIM capacitor (8), 7th MIM capacitor (9) and the 8th MIM capacitor (10), oneth MEMS clamped beam (14) and the 2nd MEMS clamped beam (15)；The centre of CPW (1) is CPW holding wire, and the both sides of CPW holding wire are CPW ground wire；Planar spiral inductor (2) is positioned at the middle part of this reconfigurable microwave band filter, the coil (2-2) of planar spiral inductor makes somebody a mere figurehead on gallium arsenide substrate (20) that lower channel (2-1) is positioned in gallium arsenide substrate (20), covers Si on the lower channel (2-1) of coil (2-2) lower section of planar spiral inductor3N4Insulating medium layer (11)；The first MIM capacitor (3) and the second MIM capacitor (4) that two are parallel-connected between CPW holding wire and ground wire are symmetrically positioned in the left and right sides in planar spiral inductor (2)；Two the 3rd MIM capacitor (5) being connected in series to CPW holding wire and the 4th MIM capacitor (6) are symmetrically positioned in the left and right sides of planar spiral inductor (2) equally；Four the 5th MIM capacitor (7), the 6th MIM capacitor (8), the 7th MIM capacitor (9) and the 8th MIM capacitor (10) connected by lead-in wire (12) are not only symmetrically disposed at the left and right sides of planar spiral inductor (2), and are located between two the first MIM capacitor (3) being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4)；The upper bottom crown of all MIM capacitor is each through Si3N4Insulating medium layer (11) separates；Oneth MEMS clamped beam (14) and the 2nd MEMS clamped beam (15) are individually positioned in rear side and the front side of planar spiral inductor (2)；Thereby through a planar spiral inductor (2), the first MIM capacitor (3) that two are parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4) and two the 3rd MIM capacitor (5) being connected in series to CPW holding wire and the 4th MIM capacitor (6) constitute the microwave band-pass filter of π type, and utilize the microwave band-pass filter of this π type and a MEMS clamped beam (14) and the 2nd MEMS clamped beam (15) to control four the 5th MIM capacitor (7) connected by lead-in wire respectively, 6th MIM capacitor (8), 7th MIM capacitor (9) and the 8th MIM capacitor (10), achieve the mid frequency of four states of this reconfigurable microwave band filter and the change of bandwidth.
2. micromechanics according to claim 1 clamped beam type four state reconfigurable microwave band filter, it is characterized in that: one end of described lead-in wire (12) is connected with CPW holding wire, and the other end of go between (12) is close to CPW ground wire and has a salient point (13) on end；Two lead-in wires (12) on front side of CPW holding wire are close and close to each other to the CPW ground wire of planar spiral inductor (2) front side respectively, and two lead-in wires (12) on rear side of CPW holding wire are close and close to each other to the CPW ground wire of planar spiral inductor (2) rear side respectively.
3. micromechanics according to claim 1 clamped beam type four state reconfigurable microwave band filter, it is characterized in that: across a MEMS clamped beam (14) or the 2nd MEMS clamped beam (15) above the salient point (13) of lead-in wire two articles close to each other (12) end of any side of the both sides, front and back of CPW holding wire, the Liang Gemao district of each MEMS clamped beam (14) or the 2nd MEMS clamped beam (15) is respectively positioned on the CPW ground wire of phase the same side；Drive electrode (16) is placed in the outside of lead-in wire (12) two articles close to each other below a MEMS clamped beam (14) and the 2nd MEMS clamped beam (15), and this drive electrode (16) is connected with the press welding block (18) of CPW ground outside by a connecting line (17)；The drive electrode (16) of a MEMS clamped beam (14) and the 2nd MEMS clamped beam (15) lower section covers Si3N4Insulating medium layer (11)；Air bridges (19) is used for interconnecting connected line (17) CPW ground wire separately, covers Si on the connecting line (17) of air bridges (19) lower section3N4Insulating medium layer (11).
4. micromechanics according to claim 1 clamped beam type four state reconfigurable microwave band filter, it is characterized in that: in two the 5th MIM capacitor (7) and the 7th MIM capacitor (9) connected by going between of any side of the left and right sides of planar spiral inductor (2), or the 6th MIM capacitor (8) and the 8th MIM capacitor (10) place along the front and back lateral symmetry of CPW holding wire, and there is different capacitance size；And two of any side the 5th MIM capacitor (7) connected by lead-in wire in the both sides, front and back of CPW holding wire and the 6th MIM capacitor (8), or the 7th MIM capacitor (9) and the 8th MIM capacitor (10) have identical capacitance size.
5. the preparation method of a micromechanics as claimed in claim 1 clamped beam type four state reconfigurable microwave band filter, it is characterised in that this preparation method is:
1) gallium arsenide substrate (20) is prepared: selection semi-insulating GaAs is substrate；
2) on substrate (20), it is coated with photoresist, removes the photoresist at salient point (13) place that preparation making is positioned on lead-in wire (12)；
3) in substrate (20) upper sputtering gold germanium ni au, its thickness is altogether
4) peel off removal step 2) in the photoresist that stays, the related gold germanium ni au eliminated on photoresist, preliminarily form the salient point (13) on lead-in wire (12)；
5) in step 4) substrate (20) that obtains is coated with photoresist, remove the photoresist at salient point (13) place that preparation making is positioned on lead-in wire (12)；
6) on substrate (20), tantalum nitride is sputtered；
7) by step 5) in the photoresist lift off that stays remove, the tantalum nitride above related removal photoresist, again preliminarily form the salient point (13) on lead-in wire (12)；
8) in gallium arsenide substrate (20), it is coated with photoresist, removes preparation and make the photoresist that CPW (1), the lower channel (2-1) of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire (12), salient point (13), drive electrode (16), connecting line (17) and press welding block (18) are local；
9) growing titanium/platinum/gold/titanium by evaporation mode on substrate (20), its thickness is 0.44 μm altogether；
10) by step 8) photoresist that stays removes, related titanium/platinum/gold/the titanium eliminated above photoresist, preliminarily form CPW (1) and press welding block (18), and form the lower channel (2-1) of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire (12), salient point (13), drive electrode (16) and connecting line (17) completely；
11) deposit photoetching Si3N4Insulating medium layer (11): in step 10) in the gallium arsenide substrate (20) that obtains, grow one layer by plasma-enhanced chemical vapor deposition processThick Si3N4Insulating medium layer (11), photoetching Si3N4Insulating medium layer (11), is retained in the Si on the lower channel (2-1) of planar spiral inductor, lower floor's pole plate of MIM capacitor, drive electrode (16) and connecting line (17)3N4Insulating medium layer (11)；
12) deposit photoetching polyimide sacrificial layer: process the upper polyimide sacrificial layer being coated with 1.6 μ m-thick of the gallium arsenide substrate (20) obtained in preceding step, photoetching polyimide sacrificial layer, only retains the polyimide sacrificial layer of the coil (2-2) of planar spiral inductor, a MEMS clamped beam (14), the 2nd MEMS clamped beam (15) and air bridges (19) lower section；
13) down payment electroplated it is used for by evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is
14) in step 13) gallium arsenide substrate (20) that obtains is coated with photoresist, remove preparation and make the photoresist in CPW (1), the coil (2-2) of planar spiral inductor, the top crown of MIM capacitor, a MEMS clamped beam (14), the 2nd MEMS clamped beam (15), air bridges (19) and press welding block (18) place；
15) one layer of gold of plating, its thickness is 2 μm；
16) removal step 14) in the photoresist that stays；
17) titanium/gold/titanium is anti-carved, corrosion down payment, forms CPW (1), the coil (2-2) of planar spiral inductor, the top crown of MIM capacitor, a MEMS clamped beam (14), the 2nd MEMS clamped beam (15), air bridges (19) and press welding block (18)；
18) release polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer of the coil (2-2) of planar spiral inductor, a MEMS clamped beam (14), the 2nd MEMS clamped beam (15) and air bridges (19) lower section, deionized water soaks slightly, dehydrated alcohol dehydration, volatilize under room temperature, dry.
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| CN107565999A (en) * | 2017-08-15 | 2018-01-09 | 东南大学 | The clamped beam receiver front end of the clutter collection of energy of internet of things oriented |
| CN107634723A (en) * | 2017-08-15 | 2018-01-26 | 东南大学 | The clamped beam mixing system of the clutter collection of energy of internet of things oriented |
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