CN103812467B - Micromachine cantilever beam formula 16 state reconfigurable microwave band filter - Google Patents
Micromachine cantilever beam formula 16 state reconfigurable microwave band filter Download PDFInfo
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- CN103812467B CN103812467B CN201410053258.8A CN201410053258A CN103812467B CN 103812467 B CN103812467 B CN 103812467B CN 201410053258 A CN201410053258 A CN 201410053258A CN 103812467 B CN103812467 B CN 103812467B
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Abstract
The micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention utilizes the planar spiral inductor of a small electric sensibility reciprocal and the MIM capacitor of eight small electric capacitances to achieve the change of mid frequency and the bandwidth with 16 states, thus breaches the restriction that in traditional reconfigurable band filter, inductance quantity is many and inductance value is bigger.By two MIM capacitor that are parallel-connected to CPW holding wire and ground wire between the most symmetrically placed in the left and right sides of a planar spiral inductor and two MIM capacitor being connected in series to CPW holding wire, constitute π type microwave band-pass filter；The MIM capacitor that four are connected by lead-in wire is symmetrically disposed at the left and right sides of planar spiral inductor and between two MIM capacitor being parallel-connected between CPW holding wire and ground wire；Four MIM capacitor connected by lead-in wire are respectively provided with different capacitances；Control whether four MIM capacitor connected by lead-in wire are connected with CPW ground wire respectively by four MEMS cantilever beams, it is achieved the restructural change of this wave filter.
Description
Technical field
The present invention proposes micromachine cantilever beam formula 16 state reconfigurable microwave band filter, belongs to the technical field of microelectromechanical systems (MEMS).
Background technology
Wave filter is one of most important device in microwave engineering.In the design of passive filter, being most widely used of filter synthesis method/insertion-loss method.This method includes following step: design has the prototype lowpass filter of expection pass-band performance；According to the mid frequency specified and/or band edge frequency, prototype network is converted into the type (low pass, high pass, band are logical or band hinders) of required wave filter；Network is realized with lump and/or distributed circuit element.But, the band filter obtained through frequency transformation from prototype lowpass filter in the method, the quantity not only needing inductance is more, and the inductance value of inductance is relatively big, typically up to tens nH, and uses on-chip inductor to be difficult to reach the highest inductance value.Therefore, at the application conditions that some are more relaxed, the band filter of simple topological form can be used, this greatly reduces quantity and the inductance value of inductance, thus reduce chip area and the parasitic drain caused by on-chip inductor.And MEMS technology is the optimum selection realizing restructural band filter.Reconfigurable microwave communication system growing is miniaturized along with current, planar inductor and metal-insulator-metal (MIM) electric capacity on the sheet that requirement need to use quantity few when designing reconfigurable microwave band filter as far as possible and numerical value is little, particularly inductance, to reduce chip area and parasitic drain, and it is capable of the mid frequency of 16 states and the change of bandwidth.Along with the fast development of MEMS technology, and the further investigation to MEMS cantilever beam, make the beam type 16 state reconfigurable microwave band filter realizing above-mentioned functions based on MEMS technology be possibly realized.
Summary of the invention
Technical problem: in order to overcome the deficiencies in the prior art, the invention provides a kind of beam type based on MEMS technology 16 state reconfigurable microwave band filter, realize this reconfigurable microwave band filter and there is the mid frequency of 16 states and the change of bandwidth, and there is less chip area.
Technical scheme: the present invention is parallel-connected to the co-planar waveguide (CPW) MIM capacitor between holding wire and ground wire and two MIM capacitor being connected in series to CPW holding wire by the most symmetrically placed two in the left and right sides of a planar spiral inductor, thus constitutes the microwave band-pass filter of a π type topological structure；By the MIM capacitor that four are connected by lead-in wire being symmetrically disposed at the left and right sides of planar spiral inductor and between two MIM capacitor being parallel-connected between CPW holding wire and ground wire, simultaneously two MIM capacitor connected by lead-in wire in any side of the left and right sides of planar spiral inductor are placed along lateral symmetry before and after CPW holding wire；These four MIM capacitor connected by lead-in wire are respectively provided with different capacitances；Article four, lead-in wire is connected in series four MIM capacitor connected by lead-in wire respectively, and wherein one end of every lead-in wire is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point on the end；Four MEMS cantilever beams are respectively above the salient point four lead terminal, and wherein one end of MEMS cantilever beam is fixed on CPW ground wire by anchor district that the other end is in free state；A drive electrode is had near lead-in wire below MEMS cantilever beam；By applying driving voltage between one or several MEMS cantilever beam and corresponding drive electrode, one or several MEMS cantilever beam is contacted with salient point thereunder, thus realizes this reconfigurable microwave band filter and there is the mid frequency of 16 states and the change of bandwidth.
The micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention, it is arranged above with CPW in gallium arsenide substrate, the centre position of CPW is CPW holding wire, the both sides of CPW holding wire are CPW ground wires, planar spiral inductor is positioned at the centre of this wave filter plane, the most symmetrically placed two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor and two the 3rd MIM capacitor being connected in series to CPW holding wire and the 4th MIM capacitor in the left and right sides of planar spiral inductor, constitute the microwave band-pass filter of π type topographical form；Four the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor connected by lead-in wire are symmetrically disposed at the left and right sides of planar spiral inductor and between two the first MIM capacitor being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor, and simultaneously two the 5th MIM capacitor connected by lead-in wire of any side in the left and right sides of planar spiral inductor and the 7th MIM capacitor or the 6th MIM capacitor and the 8th MIM capacitor are placed along lateral symmetry before and after CPW holding wire；Article four, lead-in wire is connected in series four the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor connected by lead-in wire respectively, wherein one end of every lead-in wire is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point on the end；Four MEMS cantilever beams are respectively above the salient point four lead terminal；Go between below each MEMS cantilever beam is placed around a drive electrode, and this drive electrode is connected with the press welding block of CPW ground outside by a connecting line；Thus by utilizing the salient point on the microwave band-pass filter of a π type topographical form and four MEMS cantilever beams whether contact lead-wire to control whether four the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor connected by lead-in wire are connected with CPW ground wire respectively, it is achieved that the mid frequency of 16 states of this reconfigurable microwave band filter and the change of bandwidth.
The quantity of planar spiral inductor is 1 and is positioned at the middle part of this reconfigurable microwave band filter；Planar spiral inductor includes coil and lower channel two parts of inductance；The coil of planar spiral inductor is maked somebody a mere figurehead on gallium arsenide substrate, and lower channel is positioned in gallium arsenide substrate；The external lug of the coil of inductance is connected with CPW holding wire and its internal connection is connected with lower channel；The other end of lower channel is connected with CPW holding wire.
Described the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor are respectively provided with different capacitances.
The number of MEMS cantilever beam is 4；Wherein, one end of each MEMS cantilever beam is fixed on CPW ground wire by anchor district, and the other end is in free state.
The micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention is by the most symmetrically placed two MIM capacitor being parallel-connected between CPW holding wire and ground wire and two MIM capacitor being connected in series to CPW holding wire in the left and right sides of a planar spiral inductor；By the MIM capacitor that four are connected by lead-in wire being symmetrically disposed at the left and right sides of planar spiral inductor and between two MIM capacitor being parallel-connected between CPW holding wire and ground wire, simultaneously two MIM capacitor connected by lead-in wire in any side of the left and right sides of planar spiral inductor are placed along lateral symmetry before and after CPW holding wire；These four MIM capacitor connected by lead-in wire are respectively provided with different capacitances；Article four, lead-in wire is connected in series four the 5th MIM capacitor, the 6th MIM capacitor, the 7th MIM capacitor and the 8th MIM capacitor connected by lead-in wire respectively, wherein one end of every lead-in wire is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point on the end；Four MEMS cantilever beams are respectively above the salient point four lead terminal, and wherein one end of MEMS cantilever beam is fixed on CPW ground wire by anchor district that the other end is in free state；Below MEMS cantilever beam, there is a drive electrode near lead-in wire, drive electrode covers Si3N4Insulating medium layer.When not applying driving voltage between four MEMS cantilever beams and respective drive electrode, four MEMS cantilever beams are in UP state, the most each MEMS cantilever beam does not contacts with the salient point gone between below, now four MIM capacitor connected by lead-in wire are not connected with CPW ground wire, then the MIM capacitor size in parallel in the left and right sides of planar spiral inductor does not the most change, it is achieved thereby that the mid frequency of the first of this reconfigurable microwave band filter state and bandwidth；When only applying driving voltage between a MEMS cantilever beam and corresponding drive electrode, this MEMS cantilever beam is in DOWN state and the other three does not apply the MEMS cantilever beam of driving voltage still in UP state, i.e. only have a MEMS cantilever beam to contact with the salient point gone between below, now a MIM capacitor connected by lead-in wire on the left side of planar spiral inductor or right side is connected with CPW ground wire, then change in the left side of planar spiral inductor or the size of the MIM capacitor in parallel on right side, again because four MIM capacitor connected by lead-in wire of the left and right sides being positioned at planar spiral inductor are respectively provided with different capacitances, it is achieved thereby that the second of this reconfigurable microwave band filter, 3rd, the mid frequency of the 4th and the 5th state and bandwidth；nullWhen applying driving voltage between any two MEMS cantilever beam and corresponding drive electrode，The two MEMS cantilever beam is in DOWN state and two other does not apply the MEMS cantilever beam of driving voltage still in UP state，Two MEMS cantilever beams are i.e. had to contact with the salient point gone between below，Now two of the left side of planar spiral inductor or two of right side or each side a MIM capacitor connected by lead-in wire be connected with CPW ground wire，Then change in the left side of planar spiral inductor or the size of the MIM capacitor in parallel of right side or the left and right sides，Again because these four MIM capacitor connected by lead-in wire are respectively provided with different capacitances，It is achieved thereby that the 6th of this reconfigurable microwave band filter the、7th、8th、9th、Tenth and the mid frequency of the 11st state and bandwidth；When applying driving voltage between any three MEMS cantilever beams and corresponding drive electrode, these three MEMS cantilever beam is in DOWN state and another one does not apply the MEMS cantilever beam of driving voltage still in UP state, three MEMS cantilever beams are i.e. had to contact with the salient point gone between below, now it is connected with CPW ground wire with the MIM capacitor connected by lead-in wire in left side with of right side or two of right side at two of the left side of planar spiral inductor, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor, again because these four MIM capacitor connected by lead-in wire are respectively provided with different capacitances, it is achieved thereby that the 12nd of this reconfigurable microwave band filter the, 13rd, 14th and the mid frequency of the 15th state and bandwidth；When all applying driving voltage between four MEMS cantilever beams and respective drive electrode, four MEMS cantilever beams are in DOWN state, i.e. four MEMS cantilever beams all contact with the salient point gone between below, now four MIM capacitor connected by lead-in wire in the left and right sides of planar spiral inductor are all connected with CPW ground wire, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor, it is achieved thereby that the mid frequency of the 16th of this reconfigurable microwave band filter the state and bandwidth.
Beneficial effect:
1) achieve the change of the mid frequency of 16 states of this reconfigurable microwave band filter, and achieve the change of bandwidth in each state；
2) compared with MEMS clamped beam, use MEMS cantilever beam to contact with salient point thereunder, there is less driving voltage, thus reduce dc power；
2) have employed π type topographical form and constitute bandpass characteristics, reduce the quantity of inductance and reduce inductance value, thus reduce chip area and parasitic loss；
3) traditional reconfigurable microwave band-pass filter is breached changing mid frequency and the restriction that the capacitance of multiple inductance and the inductance value of inductance and electric capacity is bigger must be applied during bandwidth；
4) completely compatible with GaAs single-chip microwave integration circuit technique.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of micromachine cantilever beam formula 16 state reconfigurable microwave band filter；
Fig. 2 is the A-A profile of micromachine cantilever beam formula 16 state reconfigurable microwave band filter；
Fig. 3 is the B-B profile of micromachine cantilever beam formula 16 state reconfigurable microwave band filter；
Figure includes: CPW1, planar spiral inductor 2, lower channel 2-1, coil 2-2, first MIM capacitor the 3, second MIM capacitor the 4, the 3rd MIM capacitor the 5, the 4th MIM capacitor the 6, the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor the 9, the 8th MIM capacitor 10, Si3N4Insulating medium layer 11, lead-in wire 12, salient point 13, MEMS cantilever beam 14, drive electrode 15, connecting line 16, press welding block 17, air bridges 18 and gallium arsenide substrate 19.
Detailed description of the invention
The specific embodiments of the micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention is as follows:
Gallium arsenide substrate 19 is provided with the CPW1 that port diagnostic impedance is 50 Ω, one planar spiral inductor 2, two the first MIM capacitor 3 and the second MIM capacitor 4 being parallel-connected between CPW holding wire and ground wire, two the 3rd MIM capacitor 5 and the 4th MIM capacitor 6 being connected in series to CPW holding wire, four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9 and the 8th MIM capacitor 10, lead-in wire 12, salient point 13, MEMS cantilever beam 14, drive electrode 15, connecting line 16, press welding block 17 and air bridges 18:
CPW1 is constituted by conplane three lines, is wherein positioned at the holding wire that a line is CPW of centre and is positioned at the two lines of both sides and is the ground wire of CPW；CPW1 lies in a horizontal plane on substrate 19, is used for realizing the transmission of microwave signal and planar spiral inductor 2 and the electrical connection of MIM capacitor.For the ease of the measurement of instrument, the port diagnostic impedance of this CPW1 is designed to 50 Ω.
Planar spiral inductor 2 is positioned at the middle part of this reconfigurable microwave band filter, its coil 2-2 mainly including inductance and lower channel 2-1 two parts.Wherein, the coil 2-2 of planar spiral inductor is suspended on GaAs substrate 19, and lower channel 2-1 is positioned on GaAs substrate 19；The external lug of the coil 2-2 of inductance is connected with CPW holding wire and its internal connection is connected with lower channel 2-1；The other end of lower channel 2-1 is connected with CPW holding wire.Si is covered on lower channel 2-1 below the coil 2-2 of planar spiral inductor3N4Insulating medium layer 11.
Two the first MIM capacitor 3 being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor 4 are symmetrically positioned in the left and right sides of planar spiral inductor 2.Wherein, the bottom crown of this MIM capacitor is connected with CPW ground wire, and its top crown is connected with CPW holding wire, is Si between upper bottom crown3N4Insulating medium layer 11.
Two the 3rd MIM capacitor 5 being connected in series to CPW holding wire and the 4th MIM capacitor 6 are symmetrically positioned in equally in the left and right sides of planar spiral inductor 2.Wherein, Si is passed through between the upper bottom crown of this MIM capacitor3N4Insulating medium layer 11 separates.
The first MIM capacitor 3 that one planar spiral inductor 2, two is parallel-connected between CPW holding wire and ground wire and the second MIM capacitor 4 and two the 3rd MIM capacitor 5 being connected in series to CPW holding wire and the 4th MIM capacitor 6 constitute the basic structure of this microwave band-pass filter.This structure is a π type topological structure with bandpass characteristics, and planar spiral inductor 2 and first MIM capacitor the 3, second MIM capacitor the 4, the 3rd MIM capacitor 5 and the 4th MIM capacitor 6 are respectively provided with less inductance value and capacitance, thus avoid and not only need the quantity of inductance many when using filter synthesis method/insertion-loss method design microwave band-pass filter and inductance value is relatively big, typically up to tens nH(use planar spiral inductor on sheets to be difficult to reach the highest inductance value) drawback.Wherein, the inductance value change of planar spiral inductor 2 mainly makes the mid frequency of this microwave band-pass filter offset；The change of the capacitance of two the first MIM capacitor 3 in parallel and the second MIM capacitor 4 mainly makes the mid frequency of this microwave band-pass filter skew occur and change the bandwidth of its band filter；The main bandwidth changing this microwave band-pass filter of change of the 3rd MIM capacitor 5 of two series connection and the capacitance of the 4th MIM capacitor 6.
Four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 connected by lead-in wire and the 8th MIM capacitor 10 are not only symmetrically disposed at the left and right sides of planar spiral inductor 2, and are located between those two the first MIM capacitor 3 and the second MIM capacitor 4 being parallel-connected between CPW holding wire and ground wire；Wherein, in two the 5th MIM capacitor 7 and the 7th MIM capacitor 9 connected by lead-in wire of any side of the left and right sides of planar spiral inductor 2, or the 6th MIM capacitor 8 and the 8th MIM capacitor 10 are symmetrically disposed at both sides before and after CPW holding wire；These four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 and the 8th MIM capacitor 10 connected by lead-in wire are respectively provided with different capacitances；The upper bottom crown of each MIM capacitor connected by lead-in wire passes through Si3N4Insulating medium layer 11 separates.
Article four, lead-in wire 12 is connected in series four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 and the 8th MIM capacitor 10 connected by lead-in wire respectively.One end of every lead-in wire 12 is connected with CPW holding wire, and go between 12 the other end close to CPW ground wire and there is a salient point 13 on the end.The end of on front side of CPW holding wire two lead-in wires 12 CPW ground wire on front side of planar spiral inductor 2 respectively is close, and the end of two lead-in wires 12 on rear side of CPW holding wire CPW ground wire on rear side of planar spiral inductor 2 respectively is close.
Salient point 13 lays respectively on the end of every lead-in wire 12, for reducing driving voltage and the contact resistance that MEMS cantilever beam 14 is connected with lead-in wire 12 because of electrostatic force.
Four identical MEMS cantilever beams 14 lie in a horizontal plane in both sides before and after planar spiral inductor 2 the most two-by-two.Each MEMS cantilever beam 14 is above the salient point 13 at every lead-in wire 12 ends, one end of MEMS cantilever beam 14 is fixed on CPW ground wire by anchor district that the other end is in free state, wherein at the free end that surface is MEMS cantilever beam 14 of salient point 13 of lead-in wire 12 ends.Go between below each MEMS cantilever beam 14 12 be placed around a drive electrode 15, this drive electrode 15 is connected with the press welding block 17 of CPW ground outside by a connecting line 16；Si is covered on drive electrode 15 below MEMS cantilever beam 143N4Insulating medium layer 11.
The CPW ground wire that the press welding block 17 that drive electrode 15 below MEMS cantilever beam 14 is connected is connected with the anchor district of its MEMS cantilever beam 14 constitutes two direct-flow input ends, for applying the driving voltage of MEMS cantilever beam 14.
Air bridges 18 is used for interconnecting connected line 16 separate CPW ground wire, and the connecting line 16 below air bridges 18 covers Si3N4Insulating medium layer 11.
In frame for movement, CPW1, planar spiral inductor 2, MIM capacitor, lead-in wire 12, salient point 13, MEMS cantilever beam 14, drive electrode 15, connecting line 16, press welding block 17 and air bridges 18 are produced on same GaAs substrate 19.
The micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention is by the most symmetrically placed two the first MIM capacitor 3 being parallel-connected between CPW holding wire and ground wire in the left and right sides of a planar spiral inductor 2 and the second MIM capacitor 4 and two the 3rd MIM capacitor 5 and the 4th MIM capacitor 6 being connected in series to CPW holding wire；By four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 connected by lead-in wire and the 8th MIM capacitor 10 are symmetrically disposed at the left and right sides of planar spiral inductor 2 and between two the first MIM capacitor 3 and the second MIM capacitor 4 being parallel-connected between CPW holding wire and ground wire, simultaneously two the 5th MIM capacitor 7 connected by lead-in wire of any side in the left and right sides of planar spiral inductor 2 and the 7th MIM capacitor 9 or the 6th MIM capacitor 8 and the 8th MIM capacitor 10 are placed along lateral symmetry before and after CPW holding wire；These four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 and the 8th MIM capacitor 10 connected by lead-in wire are respectively provided with different capacitances；Article four, lead-in wire 12 is connected in series four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 and the 8th MIM capacitor 10 connected by lead-in wire respectively, wherein one end of every lead-in wire 12 is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point 13 on the end；Four MEMS cantilever beams 14 are respectively above the salient point 13 at four lead-in wire 12 ends, and wherein one end of MEMS cantilever beam 14 is fixed on CPW ground wire by anchor district that the other end is in free state；A drive electrode is had near lead-in wire below MEMS cantilever beam 14；Si is covered on drive electrode 15 below MEMS cantilever beam 143N4Insulating medium layer 11.When not applying driving voltage between four MEMS cantilever beams 14 and respective drive electrode 15, four MEMS cantilever beams 14 are in UP state, the most each MEMS cantilever beam 14 the most not with go between below 12 salient point 13 contact, now four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9 is not connected with CPW ground wire with the 8th MIM capacitor 10, then the MIM capacitor size in parallel in the left and right sides of planar spiral inductor 2 does not the most change, it is achieved thereby that the mid frequency of the first of this reconfigurable microwave band filter state and bandwidth；nullWhen only applying driving voltage between a MEMS cantilever beam 14 and corresponding drive electrode 15，This MEMS cantilever beam 14 is in DOWN state and the other three does not apply the MEMS cantilever beam 14 of driving voltage still in UP state，I.e. only have a MEMS cantilever beam 14 to contact with the salient point 13 of lead-in wire 12 below，Now a MIM capacitor connected by lead-in wire on the left side of planar spiral inductor 2 or right side is connected with CPW ground wire，Then change in the left side of planar spiral inductor 2 or the size of the MIM capacitor in parallel on right side，Again because being positioned at four the 5th MIM capacitor 7 connected by lead-in wire of the left and right sides of planar spiral inductor 2、6th MIM capacitor 8、7th MIM capacitor 9 and the 8th MIM capacitor 10 are respectively provided with different capacitances，It is achieved thereby that the second of this reconfigurable microwave band filter、3rd、The mid frequency of the 4th and the 5th state and bandwidth；nullWhen applying driving voltage between any two MEMS cantilever beam 14 and corresponding drive electrode 15，The two MEMS cantilever beam 14 is in DOWN state and two other does not apply the MEMS cantilever beam 14 of driving voltage still in UP state，Two MEMS cantilever beams 14 are i.e. had to contact with the salient point 13 of lead-in wire 12 below，Now two of the left side of planar spiral inductor 2 or two of right side or each side a MIM capacitor connected by lead-in wire be connected with CPW ground wire，Then change in the left side of planar spiral inductor 2 or the size of the MIM capacitor in parallel of right side or the left and right sides，Again because of these four the 5th MIM capacitor 7 connected by lead-in wire、6th MIM capacitor 8、7th MIM capacitor 9 and the 8th MIM capacitor 10 are respectively provided with different capacitances，It is achieved thereby that the 6th of this reconfigurable microwave band filter the、7th、8th、9th、Tenth and the mid frequency of the 11st state and bandwidth；nullWhen applying driving voltage between any three MEMS cantilever beams 14 and corresponding drive electrode 15，These three MEMS cantilever beam 14 is in DOWN state and another one does not apply the MEMS cantilever beam 14 of driving voltage still in UP state，Three MEMS cantilever beams 14 are i.e. had to contact with the salient point 13 of lead-in wire 12 below，Now it is connected with CPW ground wire with the MIM capacitor connected by lead-in wire in left side with of right side or two of right side at two of the left side of planar spiral inductor 2，Then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor 2，Again because of these four the 5th MIM capacitor 7 connected by lead-in wire、6th MIM capacitor 8、7th MIM capacitor 9 and the 8th MIM capacitor 10 are respectively provided with different capacitances，It is achieved thereby that the 12nd of this reconfigurable microwave band filter the、13rd、14th and the mid frequency of the 15th state and bandwidth；When all applying driving voltage between four MEMS cantilever beams 14 and respective drive electrode 15, four MEMS cantilever beams 14 are in DOWN state, i.e. four MEMS cantilever beams 14 all salient points 13 with lead-in wire 12 below contact, now in four the 5th MIM capacitor 7 connected by lead-in wire of the left and right sides of planar spiral inductor 2, 6th MIM capacitor 8, 7th MIM capacitor 9 is all connected with CPW ground wire with the 8th MIM capacitor 10, then change the size of MIM capacitor in parallel in the left and right sides of planar spiral inductor 2, it is achieved thereby that the mid frequency of the 16th of this reconfigurable microwave band filter the state and bandwidth.
The preparation method of the micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention is:
1) gallium arsenide substrate 19 is prepared: selection semi-insulating GaAs is substrate；
2) in gallium arsenide substrate 19, coat photoresist, remove preparation and make the photoresist at the salient point 13 being positioned on lead-in wire 12；
3) sputtering gold germanium ni au in gallium arsenide substrate 19, its thickness is altogether
4) peel off removal step 2) in the photoresist that stays, the related gold germanium ni au eliminated on photoresist, preliminarily form the salient point 13 on lead-in wire 12；
5) in the gallium arsenide substrate 19 that step 4) obtains, coat photoresist, remove preparation and make the photoresist at the salient point 13 being positioned on lead-in wire 12；
6) in gallium arsenide substrate 19, tantalum nitride is sputtered；
7) photoresist lift off stayed in step 5) is removed, the tantalum nitride above related removal photoresist, again preliminarily form the salient point 13 on lead-in wire 12；
8) in gallium arsenide substrate 19, coat photoresist, remove preparation and make CPW1, the lower channel 2-1 of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire 12, salient point 13, drive electrode 15, connecting line 16 and the photoresist in press welding block 17 place；
9) growing titanium/platinum/gold/titanium by evaporation mode in gallium arsenide substrate 19, its thickness is 0.44 μm altogether；
10) photoresist step 8) stayed is removed, related titanium/platinum/gold/the titanium eliminated above photoresist, preliminarily form CPW1 and press welding block 17, and form the lower channel 2-1 of planar spiral inductor, the bottom crown of MIM capacitor, lead-in wire 12, salient point 13, drive electrode 15 and connecting line 16 completely；
11) deposit photoetching Si3N4Insulating medium layer 11: in the gallium arsenide substrate 19 that step 10) obtains, grows one layer by plasma-enhanced chemical vapor deposition processThick Si3N4Insulating medium layer 11, photoetching Si3N4Insulating medium layer 11, is retained in the Si on the lower channel 2-1 of planar spiral inductor, lower floor's pole plate of MIM capacitor, drive electrode 15 and connecting line 163N4Insulating medium layer 11；
12) deposit photoetching polyimide sacrificial layer: process the polyimide sacrificial layer coating 1.6 μ m-thick in the gallium arsenide substrate 19 obtained in preceding step, photoetching polyimide sacrificial layer, only retains the polyimide sacrificial layer below coil 2-2, MEMS cantilever beam 14 of planar spiral inductor and air bridges 18；
13) by evaporation mode growth for the down payment electroplated: evaporation titanium/gold/titanium, as down payment, its thickness is
14) in the gallium arsenide substrate 19 that step 13) obtains, coat photoresist, remove preparation and make CPW1, the coil 2-2 of planar spiral inductor, the top crown of MIM capacitor, MEMS cantilever beam 14, air bridges 18 and the photoresist in press welding block 17 place；
15) one layer of gold of plating, its thickness is 2 μm；
16) removal step 14) in the photoresist that stays；
17) anti-carve titanium/gold/titanium, corrode down payment, form CPW1, the coil 2-2 of planar spiral inductor, the top crown of MIM capacitor, MEMS cantilever beam 14, air bridges 18 and press welding block 17；
18) release polyimide sacrificial layer: developer solution soaks, the polyimide sacrificial layer below coil 2-2, MEMS cantilever beam 14 of removal planar spiral inductor and air bridges 18, deionized water soaks slightly, and dehydrated alcohol is dehydrated, and volatilizees, dry under room temperature.
Whether distinguish is that the standard of this structure is as follows:
1) CPW1 lies in a horizontal plane in the transmission line in gallium arsenide substrate 19 as microwave signal；
2) the most symmetrically placed two the first MIM capacitor 3 being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor 4 and two the 3rd MIM capacitor 5 and the 4th MIM capacitor 6 being connected in series to CPW holding wire in the left and right sides of a planar spiral inductor 2, constitute the microwave band-pass filter of π type topographical form；
3) by four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9 and the 8th MIM capacitor 10 are symmetrically disposed at the left and right sides of planar spiral inductor 2 and between two the first MIM capacitor 3 and the second MIM capacitor 4 being parallel-connected between CPW holding wire and ground wire, simultaneously two the 5th MIM capacitor 7 connected by lead-in wire of any side in the left and right sides of planar spiral inductor 2 and the 7th MIM capacitor 9 or the 6th MIM capacitor 8 and the 8th MIM capacitor 10 are placed along lateral symmetry before and after CPW holding wire, these four the 5th MIM capacitor 7 connected by lead-in wire, 6th MIM capacitor 8, 7th MIM capacitor 9 and the 8th MIM capacitor 10 are respectively provided with different capacitances；
4) four bars of lead-in wires 12 are connected in series four the 5th MIM capacitor the 7, the 6th MIM capacitor the 8, the 7th MIM capacitor 9 and the 8th MIM capacitor 10 connected by lead-in wire respectively, wherein one end of every lead-in wire 12 is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point 13 on the end；
5) four MEMS cantilever beams 14 are respectively above the salient point 13 at four lead-in wire 12 ends, wherein one end of MEMS cantilever beam 14 is fixed on CPW ground wire by anchor district that the other end is in free state, below MEMS cantilever beam 14, there is a drive electrode near lead-in wire, drive electrode 15 covers Si3N4Insulating medium layer 11；6) in this reconfigurable microwave band filter, the quantity of planar spiral inductor 2 is one and the quantity of MIM capacitor is eight, and they are respectively provided with less inductance value and capacitance；
The structure meeting conditions above is i.e. considered as the micromachine cantilever beam formula 16 state reconfigurable microwave band filter of the present invention.
Claims (3)
1. a micromachine cantilever beam formula 16 state reconfigurable microwave band filter, it is characterized in that: be arranged above with CPW (1) in gallium arsenide substrate (19), the centre position of CPW (1) is CPW holding wire, the both sides of CPW holding wire are CPW ground wires, planar spiral inductor (2) is positioned at the centre of this wave filter plane, the most symmetrically placed two the first MIM capacitor (3) being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4) and two the 3rd MIM capacitor (5) being connected in series to CPW holding wire and the 4th MIM capacitor (6) in the left and right sides of planar spiral inductor (2), constitute the microwave band-pass filter of π type topographical form；Four the 5th MIM capacitor (7) connected by lead-in wire, 6th MIM capacitor (8), 7th MIM capacitor (9) and the 8th MIM capacitor (10) are symmetrically disposed at the left and right sides of planar spiral inductor (2) and between two the first MIM capacitor (3) being parallel-connected between CPW holding wire and ground wire and the second MIM capacitor (4), simultaneously in two the 5th MIM capacitor (7) connected by lead-in wire of any side and the 7th MIM capacitor (9) of the left and right sides of planar spiral inductor (2), or the 6th MIM capacitor (8) and the 8th MIM capacitor (10) place along lateral symmetry before and after CPW holding wire；Described the 5th MIM capacitor (7), the 6th MIM capacitor (8), the 7th MIM capacitor (9) and the 8th MIM capacitor (10) are respectively provided with different capacitances；Article four, lead-in wire (12) is connected in series four the 5th MIM capacitor (7), the 6th MIM capacitor (8), the 7th MIM capacitor (9) and the 8th MIM capacitor (10) connected by lead-in wire respectively, wherein one end of every lead-in wire (12) is connected with CPW holding wire, and the other end near CPW ground wire and makes a salient point (13) on the end；Four MEMS cantilever beams (14) are respectively across salient point (13) top at four lead-in wire (12) ends；Being placed around a drive electrode (15) each MEMS cantilever beam (14) lower section lead-in wire (12), this drive electrode (15) is connected with the press welding block (17) of CPW ground outside by a connecting line (16)；MEMS cantilever beam (14) lower section drive electrode (15) covers Si3N4Insulating medium layer (11)；Thus by utilizing the salient point on the microwave band-pass filter of a π type topographical form and four MEMS cantilever beams (14) whether contact lead-wire to control whether four the 5th MIM capacitor (7) connected by lead-in wire, the 6th MIM capacitor (8), the 7th MIM capacitor (9) are connected with CPW ground wire with the 8th MIM capacitor (10) respectively, it is achieved that the mid frequency of 16 states of this reconfigurable microwave band filter and the change of bandwidth.
Micromachine cantilever beam formula 16 state reconfigurable microwave band filter the most according to claim 1, it is characterised in that: the quantity of planar spiral inductor (2) is 1 and is positioned at the middle part of this reconfigurable microwave band filter；Planar spiral inductor (2) includes coil (2-2) and lower channel (2-1) two parts of inductance；The coil (2-2) of planar spiral inductor is maked somebody a mere figurehead on gallium arsenide substrate (19), and lower channel (2-1) is positioned in gallium arsenide substrate (19)；The external lug of the coil (2-2) of inductance is connected with CPW holding wire and its internal connection is connected with lower channel (2-1)；The other end of lower channel (2-1) is connected with CPW holding wire.
Micromachine cantilever beam formula 16 state reconfigurable microwave band filter the most according to claim 1, it is characterised in that: the number of MEMS cantilever beam (14) is 4；Wherein, one end of each MEMS cantilever beam is fixed on CPW ground wire by anchor district, and the other end is in free state.
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| CN201430576Y (en) * | 2009-05-27 | 2010-03-24 | 北京中石伟业技术有限公司 | Filter with integrated harmonic and conduction suppression |
| CN103281075A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5485131A (en) * | 1994-10-13 | 1996-01-16 | Motorola, Inc. | Transmission line filter for MIC and MMIC applications |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201430576Y (en) * | 2009-05-27 | 2010-03-24 | 北京中石伟业技术有限公司 | Filter with integrated harmonic and conduction suppression |
| CN103281075A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor |
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| Title |
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| Tunable Band-Pass Filter Using RF MEMs Capacitance And Transmission Line;S.C.Saha;《Progress In Electromagnetics Research C》;20111231;第23卷;第233-247页 * |
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