CN104037027B - A kind of MEMS capacitance switch - Google Patents

A kind of MEMS capacitance switch Download PDF

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Publication number
CN104037027B
CN104037027B CN201410298495.0A CN201410298495A CN104037027B CN 104037027 B CN104037027 B CN 104037027B CN 201410298495 A CN201410298495 A CN 201410298495A CN 104037027 B CN104037027 B CN 104037027B
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China
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drive electrode
coverage
area
metal area
signal transmssion
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CN201410298495.0A
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Chinese (zh)
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CN104037027A (en
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鲍景富
王秋苹
邓迪
杜亦佳
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电子科技大学
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Abstract

A kind of MEMS capacitance switch, belongs to electronic science and technology field.Comprise the substrate of tape insulation layer, the ground electrode of signal transmssion line and both sides, there is dielectric layer on signal transmssion line surface, and dielectric layer surface has three metal areas of coverage, two ground electrodes have respectively a fixed anchor point, two fixed anchor points support drive electrode structure; Drive electrode structure is " both wings " type step structure, comprise the first middle drive electrode and second and third drive electrode of both wings, first drive electrode both sides adopt clamped beam to be connected with fixed anchor point, second and third drive electrode adopts cantilever beam to be connected with the first drive electrode respectively, and the distance between second and third drive electrode and signal transmssion line is greater than the distance between the first drive electrode and signal transmssion line; The area of three drive electrodes increases successively.The present invention can realize 3 working frequency range, and has the advantages that insertion loss is low, isolation is high, actuation voltage is low, can be applicable in radio frequency or microwave telecommunication system.

Description

A kind of MEMS capacitance switch

Technical field

The invention belongs to electronic science and technology field, relate to MEMS (micro electro mechanical system) (MEMS), especially a kind of MEMS capacitance switch.

Technical background

Switch is the basic element of character in radio frequency (RF) and microwave telecommunication system, and radio-frequency micro electromechanical (RFMEMS) switch is in radio frequency and microwave components level and system-levelly have very large application space.Can use radio-frequency micro electromechanical (RFMEMS) switch structure voltage controlled oscillator, filter (capacitance switch, inductance) and phase shifter etc. in component level, be the indispensable element of modern radar and communication system.Radio-frequency micro electromechanical (RFMEMS) switch has compared to traditional FET and pin diode switch that DC power is little, insertion loss is low, isolation is high, intermodulation distortion is little, working band is wide and low cost, is easy to the feature such as integrated.

American documentation literature US7, 265, 647B2 discloses a kind of adjustable MEMS capacitance switch, as shown in Figure 1 to Figure 3, this adjustable MEMS capacitance switch is provided with metal level 108 as transmission line at the surperficial zone line of substrate base 110, there is metal level 104 and 106 respectively as ground electrode (height of ground electrode 104 and 106 exceedes the height of transmission line 108) in transmission line both sides, dielectric layer 109 is had in metal level 108 surface coverage as transmission line, and ground electrode 106 surface coverage has dielectric layer 402 wherein, three suspension beam structures 112 are set directly over transmission line 108, 120 and 122, three suspension beam structures are across transmission line 108, two ends are placed in two ground electrode surfaces respectively, and form tunable capacitor with the electrode covering insulating medium layer.This structure loads switch beam that certain driving voltage leaves behind above transmission line to realize the transformation of switch state from up to down.When down, by the variable capacitance between change electrode and overarm to realize the change of total capacitance, make switch have different resonance frequencys, make the acquisition high isolation degree at different frequency range.But all switch beam of this structure is all put at same plane, if the distance between switch beam and transmission line is too small, then the up state electric capacity of switch is larger, the insertion loss of switch is caused to increase, if increase the distance between switch beam and transmission line, due to the quadratic relationship of driving voltage and spacing, then the driving voltage of switch can sharply increase, in addition, the roughness of dielectric layer produces larger impact to the radio-frequency performance of switch, these ranges of application of RFMEMS switch all will seriously limited.

Summary of the invention

The invention provides a kind of frequency range worked in 3 frequency ranges adjustable high-isolation/filter with low insertion loss MEMS capacitance switch, have insertion loss low, isolation is high, the feature that actuation voltage is low, can be applicable in radio frequency or microwave telecommunication system.

Technical scheme of the present invention is as follows:

A kind of MEMS capacitance switch, as shown in Figures 3 to 5, comprise the substrate 7 that a surface has insulating barrier 8, there is in the centre position on insulating barrier 8 surface the signal transmssion line 9 that electric conducting material makes, on insulating barrier 8 surface of signal transmssion line 9 both sides, there is ground electrode 13-1 and 13-2 that is parallel to signal transmssion line 9 respectively, one deck dielectric layer 10 is coated with at the surperficial holostrome of signal transmssion line 9, the first metal area of coverage 11-2 is provided with on the surface of dielectric layer 10, second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, wherein the first metal area of coverage 11-2 is between the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, first ground electrode 13-1 surface is provided with the first fixed anchor point 12-1, the second ground electrode 13-2 surface is provided with the second fixed anchor point 12-2, between the first fixed anchor point 12-1 and the second fixed anchor point 12-2, is connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode 4 is positioned at above the first metal area of coverage 11-2, second drive electrode 5 is positioned at above the second metal area of coverage 11-1,3rd drive electrode 6 is positioned at above the 3rd metal area of coverage 11-3, and the area of the first drive electrode 4 is less than the area of the second drive electrode 5, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6, and the area of three drive electrodes is less than the area of metal cladding corresponding with it respectively, in two limits that first drive electrode 4 is corresponding with signal transmssion line 9 both sides, adopt the first clamped beam 1-1 to be connected with the first fixed anchor point 12-1, another side adopts the second clamped beam 1-2 to be connected with the second fixed anchor point 12-2, adopt the first cantilever beam 2 to be connected between second drive electrode 5 with the first drive electrode 4, between the 3rd drive electrode 6 with the first drive electrode 4, adopt two the second cantilever beams 3 to be connected, Distance geometry the 3rd drive electrode 6 between second drive electrode 5 with the second metal area of coverage 11-1 is equal with the distance between the 3rd metal area of coverage 11-3, and is greater than the distance between the first drive electrode 4 and the first metal area of coverage 11-2.

Operation principle of the present invention is:

MEMS capacitance switch provided by the invention, there are three and drive pole plate, wherein the first drive electrode 4 is a clamped beam electrode, second drive electrode 5 and the 3rd drive electrode 6 are for being positioned at the cantilever beam electrode of clamped beam electrode " both wings ", its equivalent electric circuit is as shown in Figure 6: signal transmssion line 9, dielectric layer 10 and the first metal area of coverage 11-2 form fixed capacity C1, signal transmssion line 9, dielectric layer 10 and the second metal area of coverage 11-1 form fixed capacity C2, signal transmssion line 9, dielectric layer 10 and the 3rd metal area of coverage 11-3 form fixed capacity C3, first metal area of coverage 11-2 and the first drive electrode 4 and air layer therebetween form variable capacitance C1 ', second metal area of coverage 11-1 and the second drive electrode 5 and air layer therebetween form variable capacitance C2 ', 3rd metal area of coverage 11-3 and the 3rd drive electrode 6 and air layer therebetween form variable capacitance C3 ', whole MEMS capacitance switch is when Up state, and the existence of the cantilever beam drive electrode of " both wings " is equivalent to increase the relative spacing between drive electrode and holding wire 9, reduces the electric capacity of Up state, and then the insertion loss of whole MEMS capacitance switch is reduced.When applying bias voltage on three drive electrodes, (biased actuation voltage is actual is applied between ground electrode and signal transmssion line, because ground electrode is electrically identical with three drive electrodes, so bias voltage is alternatively be applied on three drive electrodes), whole MEMS capacitance switch is changed by Up state phase Down state: when the bias voltage applied is greater than the actuation voltage of the first drive electrode 4, first drive electrode 4 is pulled down to contact with the first metal area of coverage 11-2, simultaneously also by a segment distance of leaving behind, (area due to the first drive electrode 4 is less than the area of the second drive electrode 5 for the second drive electrode 5 of the first drive electrode 4 both wings and the 3rd drive electrode 6, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6, so the actuation voltage of the first drive electrode 4 is less than the actuation voltage of the second drive electrode 5, the actuation voltage of the second drive electrode 5 is less than the actuation voltage of the 3rd drive electrode 6), but do not contact with the metal area of coverage below, now whole MEMS capacitance switch is in a Down state (equivalent electric circuit is as shown in Fig. 7 (a), equivalent capacity is electric capacity C1), continue to increase bias voltage, when bias voltage is greater than the actuation voltage of the second drive electrode 5, second drive electrode is left behind and to be contacted with the second metal area of coverage 11-1, but the 3rd drive electrode 6 is not eventually pulled completely down yet, now whole MEMS capacitance switch is in the 2nd Down state (as shown in Fig. 7 (b), equivalent capacity is the parallel connection of electric capacity C1 and electric capacity C2 to equivalent electric circuit), continue again to increase bias voltage, when bias voltage is greater than the actuation voltage of three drive electrodes 6,3rd drive electrode 6 is also left behind and to be contacted with the 3rd metal area of coverage 11-3, now whole MEMS capacitance switch is in the 3rd Down state (as shown in Fig. 7 (c), equivalent capacity is the parallel connection of electric capacity C1, electric capacity C2 and electric capacity C3 to equivalent electric circuit).Because whole MEMS capacitance switch has three Down states, corresponding three different equivalent capacitys, and then can obtain three different resonance frequencys, make whole MEMS capacitance switch can be operated in three different frequency ranges.In addition, after clamped beam electrode is left behind, the effective depth of the drive electrode relative signal transmission line 9 of both wings decreases, apply to drive to two other electrode respectively again, namely completing on the basis once driven, carrying out secondary driving, the voltage needed for disposable driving can be reduced greatly; The insulating medium layer that signal transmssion line 9 surface is corresponding with each drive electrode covers the metal cladding that one deck area is greater than respective drive electrode area, when each drive electrode left behind contact with metal cladding time, the effective area of each drive electrode is converted into the area of each metal cladding, be equivalent to the relative area increasing electric capacity, increase capacitance, improve isolation; Simultaneously, due to the existence of metal cladding, as long as drive electrode is pulled to the part contact with metal level, is just equivalent to whole pole plate and contacts with metal level, be eventually pulled completely down without the need to whole drive electrode, while raising switching capacity ratio, greatly can reduce driving voltage.

When Down state, the actuation voltage V of drive electrode pcan be expressed as:

wherein k is the coefficient of elasticity of drive electrode and brace summer composition structure, ε 0for permittivity of vacuum, W is the width of signal transmssion line 9, and w is the width of drive electrode, and h is the distance between drive electrode and signal transmssion line.

Switch be operated in ON state (up state) time, S 21the insertion loss of Parametric Representation is:

S 21 = 20 log 1 1 + jω C up Z 0 / 2

Switch is when OFF state (down state), if switch operating frequency is away from its resonance frequency, the inductance value L due to switch is generally the prosperous magnitude of skin, and electric capacity C is picofarad range, so 1/j ω C is much larger than j ω L, the therefore S of switch 21parameter is primarily of OFF state (down state) the capacitance C of switch downdetermine, during OFF state, S 21the switch isolation degree of Parametric Representation is:

S 21 = 20 log 1 1 + jω C down Z 0 / 2

In sum, MEMS capacitance switch provided by the invention has following beneficial effect:

The structure that MEMS capacitance switch provided by the invention adopts clamped drive electrode to combine with cantilever drive electrode, two kinds of electrodes are in different level heights, form a kind of " both wings " type step structure, and traditional switch pole plate is all in same level, this makes MEMS capacitance switch provided by the invention reduce up state electric capacity, and then reduces insertion loss, simultaneously because use repeatedly downdraw process, reduce actuation voltage, alleviate the contradiction between insertion loss and driving voltage.Simultaneously, MEMS capacitance switch provided by the invention adds the metal cladding corresponding with three drive electrodes on the dielectric layer 10 on signal transmssion line 9 surface, be equivalent to the relative area added between capacitor plate, increase down state electric capacity, improve isolation, effectively can reduce actuation voltage simultaneously.

Accompanying drawing explanation

Fig. 1 is american documentation literature US7, MEMS capacitance switch plan structure schematic diagram disclosed in 265,647B2.

Fig. 2 is american documentation literature US7, the A-A line sectional structure schematic diagram in FIG of MEMS capacitance switch disclosed in 265,647B2.

Fig. 3 is the plan structure schematic diagram of MEMS capacitance switch provided by the invention.

Fig. 4 is MEMS capacitance switch provided by the invention A-A line sectional structure schematic diagram in figure 3.

Fig. 5 is MEMS capacitance switch provided by the invention B-B line sectional structure schematic diagram in figure 3.

Fig. 6 is MEMS capacitance switch Up state equivalent circuit diagram provided by the invention.

Fig. 7 (a) is MEMS capacitance switch the one Down state equivalent circuit diagram provided by the invention.

Fig. 7 (b) is MEMS capacitance switch the 2nd Down state equivalent circuit diagram provided by the invention.

Fig. 7 (c) is MEMS capacitance switch the 3rd Down state equivalent circuit diagram provided by the invention.

Fig. 8 is the insertion loss the simulation results of MEMS capacitance switch Up state provided by the invention.

Fig. 9 is MEMS capacitance switch Down state isolation the simulation results provided by the invention.

Embodiment

A kind of MEMS capacitance switch, as shown in Figures 3 to 5, comprise the substrate 7 that a surface has insulating barrier 8, there is in the centre position on insulating barrier 8 surface the signal transmssion line 9 that electric conducting material makes, on insulating barrier 8 surface of signal transmssion line 9 both sides, there is ground electrode 13-1 and 13-2 that is parallel to signal transmssion line 9 respectively, one deck dielectric layer 10 is coated with at the surperficial holostrome of signal transmssion line 9, the first metal area of coverage 11-2 is provided with on the surface of dielectric layer 10, second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, wherein the first metal area of coverage 11-2 is between the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, first ground electrode 13-1 surface is provided with the first fixed anchor point 12-1, the second ground electrode 13-2 surface is provided with the second fixed anchor point 12-2, between the first fixed anchor point 12-1 and the second fixed anchor point 12-2, is connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode 4 is positioned at above the first metal area of coverage 11-2, second drive electrode 5 is positioned at above the second metal area of coverage 11-1,3rd drive electrode 6 is positioned at above the 3rd metal area of coverage 11-3, and the area of the first drive electrode 4 is less than the area of the second drive electrode 5, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6,, the area of three drive electrodes is less than the area of metal cladding corresponding with it respectively, in two limits that first drive electrode 4 is corresponding with signal transmssion line 9 both sides, adopt the first clamped beam 1-1 to be connected with the first fixed anchor point 12-1, another side adopts the second clamped beam 1-2 to be connected with the second fixed anchor point 12-2, adopt the first cantilever beam 2 to be connected between second drive electrode 5 with the first drive electrode 4, between the 3rd drive electrode 6 with the first drive electrode 4, adopt two the second cantilever beams 3 to be connected, Distance geometry the 3rd drive electrode 6 between second drive electrode 5 with the second metal area of coverage 11-1 is equal with the distance between the 3rd metal area of coverage 11-3, and is greater than the distance between the first drive electrode 4 and the first metal area of coverage 11-2.

In such scheme, each several part size is as follows:

The length of signal transmssion line 9 × wide × thick is 1 ㎜ × 100 μm × 2 μm, insulating medium layer 10 for thickness be 0.35 μm, material is silicon nitride (Si 3n 4), article two, ground electrode 12-1, the length of 12-2 × wide × thick is 1 ㎜ × 60 μm × 2 μm, the length of the first drive electrode 4 × wide × thick is 40 μm × 60 μm × 2 μm, two clamped beam 1-1, the length of 1-2 × wide × thick is 60 μm × 10 μm × 2 μm, the length of the second drive electrode 5 × wide × thick is 60 μm × 60 μm × 2 μm, the length of cantilever beam 2 or 3 × wide × thick is 60 μm × 10 μm × 2 μm, the length of the 3rd drive electrode 6 × wide × thick is 100 μm × 60 μm × 2 μm, first drive electrode 4 is 2 μm with the spacing of signal transmssion line 9, second and the 3rd the spacing of drive electrode and signal transmssion line 9 be 6 μm, the thickness of three metal claddings is 0.05 μm, the length of the first metal cladding × wide is 100 μm × 100 μm, second, the length of three metal claddings × wide is 400 μm × 100 μm.

As shown in Figure 8 and Figure 9, this MEMS capacitance switch can work in 3 frequency ranges the performance parameter simulation result of switch in 30GHz, and the Insertion Loss of each frequency range is all less than 0.25dB, and isolation is all higher than 37dB.

Claims (1)

1. a micro mechanical system capacitance switch, comprise the substrate (7) that a surface has insulating barrier (8), there is in the centre position on insulating barrier (8) surface the signal transmssion line (9) that electric conducting material makes, there is on insulating barrier (8) surface of signal transmssion line (9) both sides first ground electrode being parallel to signal transmssion line (9) (13 ?1) and the second ground electrode (13 ?2) respectively, be coated with one deck dielectric layer (10) at signal transmssion line (9) surperficial holostrome;
It is characterized in that:
Be provided with the first metal area of coverage (11 ?2), the second metal area of coverage (11 ?1) and the 3rd metal area of coverage (11 ?3) on the surface of dielectric layer (10), wherein the first metal area of coverage (11 ?2) is positioned between the second metal area of coverage (11 ?1) and the 3rd metal area of coverage (11 ?3), the first fixed anchor point (12 ?1) is provided with on the first ground electrode (13 ?1) surface, be provided with the second fixed anchor point (12 ?2) on the second ground electrode (13 ?2) surface, between the first fixed anchor point (12 ?1) and the second fixed anchor point (12 ?2), be connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode (4) is positioned at the first metal area of coverage (11 ?2) top, second drive electrode (5) is positioned at the second metal area of coverage (11 ?1) top, 3rd drive electrode (6) is positioned at the 3rd metal area of coverage (11 ?3) top, and the area of the first drive electrode (4) is less than the area of the second drive electrode (5), the area of the second drive electrode (5) is less than the area of the 3rd drive electrode (6), the area of three drive electrodes is less than the area of the metal area of coverage corresponding with it respectively, in two limits that first drive electrode (4) is corresponding with signal transmssion line (9) both sides, while adopt the first clamped beam (1 ?1) and the first fixed anchor point (12 ?1) to be connected, another side adopts the second clamped beam (1 ?2) and the second fixed anchor point (12 ?2) to be connected, adopt the first cantilever beam (2) to be connected between second drive electrode (5) with the first drive electrode (4), the 3rd drive electrode (6) is connected with adopting two the second cantilever beams (3) between the first drive electrode (4), distance between Distance geometry the 3rd drive electrode (6) between second drive electrode (5) and the second metal area of coverage (11 ?1) and the 3rd metal area of coverage (11 ?3) is equal, and is greater than the distance between the first drive electrode (4) and the first metal area of coverage (11 ?2).
CN201410298495.0A 2014-06-26 2014-06-26 A kind of MEMS capacitance switch CN104037027B (en)

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JP2018509757A (en) * 2015-02-05 2018-04-05 キャベンディッシュ・キネティックス・インコーポレイテッドＣａｖｅｎｄｉｓｈ Ｋｉｎｅｔｉｃｓ， Ｉｎｃ． DVC using MIMS in anchor
CN104821800B (en) * 2015-04-28 2017-10-17 电子科技大学 A kind of utilization double resonance unit offsets the MEMS piezo-electric resonators of feedthrough amount
CN104916502B (en) * 2015-05-15 2017-04-05 电子科技大学 A kind of DC contact Series MEMS Switchs of horizontal twin beams
CN105575734B (en) * 2015-12-23 2018-11-06 北京时代民芯科技有限公司 A kind of RF MEMS Switches and its manufacturing method
CN106373830A (en) * 2016-11-21 2017-02-01 清华大学 Capacitive radio-frequency micro-electromechanical system switch with signal lines and drive lines separated
CN109346381A (en) * 2018-11-26 2019-02-15 清华大学 A kind of trapezoidal RF MEMS Switches with upper FGS floating gate structure

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US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
CN101226856A (en) * 2007-01-18 2008-07-23 富士通株式会社 Micro-switching device and method of manufacturing the same
CN101620952A (en) * 2008-12-19 2010-01-06 清华大学 Ohm contact type radio frequency switch and integration process thereof
CN203398032U (en) * 2013-08-28 2014-01-15 哈尔滨理工大学 RF-MEMS switch based on photonic crystal

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US7265647B2 (en) * 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch

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Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
CN101226856A (en) * 2007-01-18 2008-07-23 富士通株式会社 Micro-switching device and method of manufacturing the same
CN101620952A (en) * 2008-12-19 2010-01-06 清华大学 Ohm contact type radio frequency switch and integration process thereof
CN203398032U (en) * 2013-08-28 2014-01-15 哈尔滨理工大学 RF-MEMS switch based on photonic crystal

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