CN104037027A - MEMS capacitive switch - Google Patents
MEMS capacitive switch Download PDFInfo
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Abstract
The invention belongs to the technical field of electronic science, and relates to an MEMS capacitive switch. The MEMS capacitive switch comprises a substrate with an insulation layer, a signal transmission line and ground electrodes on the two sides, a dielectric layer is arranged on the surface of the signal transmission line, three metal coverage areas are arranged on the surface of the dielectric layer, the two ground electrodes are respectively provided with a fixed anchor point, and the two fixed anchor points support a drive electrode structure. The drive electrode structure is of a two-wing type phase step structure, and comprises a first drive electrode in the middle, a second drive electrode and a third electrode, the second drive electrode and the third electrode are arranged on the two wings, the two sides of the first drive electrode are connected with the fixed anchor points through clamped beams, the second drive electrode and the third drive electrode are connected with the first drive electrode through cantilever beams, and the distance between the second drive electrode and the third drive electrode and the signal transmission line is larger than the distance between the first drive electrode and the signal transmission line. The areas of the three drive electrodes are increased in sequence. Three work frequency bands can be achieved, and the MEMS capacitive switch has the advantages of being low in insertion loss, high in isolation degree and low in drop-down voltage and can be applied to a radio-frequency or microwave communication system.
Description
Technical field
The invention belongs to electronic science and technology field, relate to MEMS (micro electro mechanical system) (MEMS), especially a kind of MEMS capacitance switch.
Technical background
Switch is the basic element of character in radio frequency (RF) and microwave telecommunication system, and radio-frequency micro electromechanical (RF MEMS) switch is in radio frequency and microwave components level and system-levelly have a very large application space.Can use radio-frequency micro electromechanical (RF MEMS) switch structure voltage controlled oscillator, filter (capacitance switch, inductance) and phase shifter etc. in component level, be the indispensable element of modern radar and communication system.Radio-frequency micro electromechanical (RF MEMS) switch has than traditional FET and pin diode switch that DC power is little, insertion loss is low, isolation is high, intermodulation distortion is little, working band is wide and low cost, is easy to the features such as integrated.
American documentation literature US7, 265, 647B2 discloses a kind of adjustable MEMS capacitance switch, as shown in Figure 1 to Figure 3, this adjustable MEMS capacitance switch is provided with metal level 108 as transmission line at the surperficial zone line of substrate base 110, there is respectively metal level 104 and 106 in transmission line both sides as ground electrode (height of ground electrode 104 and 106 exceedes the height of transmission line 108), there is dielectric layer 109 in metal level 108 surface coverage as transmission line, and ground electrode 106 surface coverage have dielectric layer 402 therein, three suspension beam structures 112 are set directly over transmission line 108, 120 and 122, three suspension beam structures are across transmission line 108, two ends are placed in respectively two ground electrode surfaces, and form tunable capacitor with the electrode that covers insulating medium layer.This structure loads the leave behind switch beam of transmission line top of certain driving voltage and realizes the transformation of switch from up to down state.In the time of down, to realize the change of total capacitance, make switch have different resonance frequencys by the variable capacitance between change electrode and overarm, make the acquisition high isolation degree at different frequency range.But all switch beam of this structure are all put at same plane, if the distance between switch beam and transmission line is too small, the up state electric capacity of switch is larger, cause the insertion loss of switch to increase, if increase the distance between switch beam and transmission line, due to the quadratic relationship of driving voltage and spacing, the driving voltage of switch can sharply increase, in addition, the roughness of dielectric layer produces larger impact to the radio-frequency performance of switch, and these are all by the range of application of the RF mems switch seriously limiting.
Summary of the invention
The invention provides a kind of 3 the adjustable high-isolation/filter with low insertion loss of the frequency range in frequency range MEMS capacitance switchs that work in, have insertion loss low, isolation is high, and the feature that actuation voltage is low can be applicable in radio frequency or microwave telecommunication system.
Technical scheme of the present invention is as follows:
A kind of MEMS capacitance switch, as shown in Figures 3 to 5, comprise that a surface has the substrate 7 of insulating barrier 8, there is the signal transmssion line 9 that electric conducting material is made in the centre position on insulating barrier 8 surfaces, there is respectively ground electrode 13-1 and a 13-2 who is parallel to signal transmssion line 9 on insulating barrier 8 surfaces of signal transmssion line 9 both sides, be coated with one deck dielectric layer 10 at the surperficial holostrome of signal transmssion line 9, be provided with the first metal area of coverage 11-2 on the surface of dielectric layer 10, the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, wherein the first metal area of coverage 11-2 is between the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, be provided with the first fixed anchor point 12-1 on the first ground electrode 13-1 surface, be provided with the second fixed anchor point 12-2 on the second ground electrode 13-2 surface, between the first fixed anchor point 12-1 and the second fixed anchor point 12-2, be connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode 4 is positioned at the first metal area of coverage 11-2 top, the second drive electrode 5 is positioned at the second metal area of coverage 11-1 top, the 3rd drive electrode 6 is positioned at the 3rd metal area of coverage 11-3 top, and the area of the first drive electrode 4 is less than the area of the second drive electrode 5, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6, and the area of three drive electrodes is less than respectively the area of corresponding with it metal cladding, in the first drive electrode 4 two limits corresponding with signal transmssion line 9 both sides, adopt the first clamped beam 1-1 to be connected with the first fixed anchor point 12-1 on one side, another side adopts the second clamped beam 1-2 to be connected with the second fixed anchor point 12-2, between the second drive electrode 5 and the first drive electrode 4, adopt the first cantilever beam 2 to be connected, between the 3rd drive electrode 6 and the first drive electrode 4, adopt two the second cantilever beams 3 to be connected, distance between distance between the second drive electrode 5 and the second metal area of coverage 11-1 and the 3rd drive electrode 6 and the 3rd metal area of coverage 11-3 equates, and is greater than the distance between the first drive electrode 4 and the first metal area of coverage 11-2.
Operation principle of the present invention is:
MEMS capacitance switch provided by the invention, there are three and drive pole plate, wherein the first drive electrode 4 is a clamped beam electrode, the second drive electrode 5 and the 3rd drive electrode 6 are for being positioned at the cantilever beam electrode of clamped beam electrode " both wings ", its equivalent electric circuit is as shown in Figure 6: signal transmssion line 9, dielectric layer 10 and the first metal area of coverage 11-2 form fixed capacity C1, signal transmssion line 9, dielectric layer 10 and the second metal area of coverage 11-1 form fixed capacity C2, signal transmssion line 9, dielectric layer 10 and the 3rd metal area of coverage 11-3 form fixed capacity C3, the first metal area of coverage 11-2 and the first drive electrode 4 and the air layer between the two form variable capacitance C1 ', the second metal area of coverage 11-1 and the second drive electrode 5 and the air layer between the two form variable capacitance C2 ', the 3rd metal area of coverage 11-3 and the 3rd drive electrode 6 and the air layer between the two form variable capacitance C3 ', whole MEMS capacitance switch is in the time of Up state, and the existence of the cantilever beam drive electrode of " both wings " has been equivalent to increase the relative spacing between drive electrode and holding wire 9, has reduced the electric capacity of Up state, and then the insertion loss of whole MEMS capacitance switch is reduced.When apply bias voltage on three drive electrodes time, (setovering, actuation voltage is actual to be applied between ground electrode and signal transmssion line, because ground electrode is electric identical with three drive electrodes, so also can be described as, bias voltage is applied on three drive electrodes), whole MEMS capacitance switch is changed by Up state phase Down state: in the time that the bias voltage applying is greater than the actuation voltage of the first drive electrode 4, the first drive electrode 4 is pulled down with the first metal area of coverage 11-2 and is contacted, simultaneously the second drive electrode 5 of the first drive electrode 4 both wings and the 3rd drive electrode 6 also by the segment distance of leaving behind (because the area of the first drive electrode 4 is less than the area of the second drive electrode 5, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6, so the actuation voltage of the first drive electrode 4 is less than the actuation voltage of the second drive electrode 5, the actuation voltage of the second drive electrode 5 is less than the actuation voltage of the 3rd drive electrode 6), but do not contact with the metal area of coverage below, now (equivalent electric circuit is as shown in Fig. 7 (a) in a Down state for whole MEMS capacitance switch, equivalent capacity is capacitor C 1), continue to increase bias voltage, in the time that bias voltage is greater than the actuation voltage of the second drive electrode 5, the second drive electrode is left behind to contact with the second metal area of coverage 11-1, but the 3rd drive electrode 6 is not left behind yet completely, now whole MEMS capacitance switch is in the 2nd Down state (equivalent electric circuit is as shown in Fig. 7 (b), and equivalent capacity is the parallel connection of capacitor C 1 and capacitor C 2), continue again to increase bias voltage, in the time that bias voltage is greater than the actuation voltage of three drive electrodes 6, the 3rd drive electrode 6 is also left behind to contact with the 3rd metal area of coverage 11-3, now whole MEMS capacitance switch is in the 3rd Down state (equivalent electric circuit is as shown in Fig. 7 (c), and equivalent capacity is the parallel connection of capacitor C 1, capacitor C 2 and capacitor C 3).Because whole MEMS capacitance switch has three Down states, corresponding three different equivalent capacitys, and then can obtain three different resonance frequencys, whole MEMS capacitance switch can be operated in three different frequency ranges.In addition, after clamped beam electrode is left behind, the effective depth of the drive electrode relative signal transmission line 9 of both wings decreases, respectively two other electrode is applied to driving again, completing on the basis once driving, carry out secondary driving, can reduce greatly the required voltage of disposable driving; On the insulating medium layer corresponding with each drive electrode of signal transmssion line 9 surfaces, cover the metal cladding that one deck area is greater than respective drive electrode area, when each drive electrode is left behind while contacting with metal cladding, the effective area of each drive electrode is converted into the area of each metal cladding, be equivalent to increase the relative area of electric capacity, strengthen capacitance, improved isolation; Simultaneously, due to the existence of metal cladding, as long as drive electrode is pulled to the part of metal level and contacts, be just equivalent to whole pole plate and contact with metal level, left behind completely without whole drive electrode, can in improving switching capacity ratio, greatly be reduced driving voltage.
In the time of Down state, the actuation voltage V of drive electrode
pcan be expressed as:
wherein k is the coefficient of elasticity of drive electrode and brace summer composition structure, ε
0for permittivity of vacuum, W is the width of signal transmssion line 9, the width that w is drive electrode, and h is the distance between drive electrode and signal transmssion line.
Switch be operated in ON state (up state) time, S
21the insertion loss of Parametric Representation is:
Switch is when OFF state (down state), if switch frequency is away from its resonance frequency, because the inductance value L of switch is generally the prosperous magnitude of skin, capacitor C is pico farad magnitude, so 1/j ω C is much larger than j ω L, the therefore S of switch
21parameter is mainly by OFF state (down state) the capacitance C of switch
downdetermine, when OFF state, S
21the switch isolation degree of Parametric Representation is:
In sum, MEMS capacitance switch provided by the invention has following beneficial effect:
The structure that MEMS capacitance switch provided by the invention adopts clamped drive electrode to combine with cantilever drive electrode, two kinds of electrodes are in different level heights, form a kind of " both wings " type step structure, and traditional switch pole plate is all in same level, this makes MEMS capacitance switch provided by the invention reduce up state electric capacity, and then reduces insertion loss, simultaneously because use repeatedly downdraw process, reduce actuation voltage, alleviated the contradiction between insertion loss and driving voltage.Simultaneously, MEMS capacitance switch provided by the invention has increased and three metal claddings that drive electrode is corresponding on the dielectric layer 10 on signal transmssion line 9 surfaces, be equivalent to increase the relative area between capacitor plate, increase down state electric capacity, improve isolation, can effectively reduce actuation voltage simultaneously.
Brief description of the drawings
Fig. 1 is american documentation literature US7, the disclosed MEMS capacitance switch of 265,647B2 plan structure schematic diagram.
Fig. 2 is american documentation literature US7, the A-A line sectional structure schematic diagram of the disclosed MEMS capacitance switch of 265,647B2 in Fig. 1.
Fig. 3 is the plan structure schematic diagram of MEMS capacitance switch provided by the invention.
Fig. 4 is MEMS capacitance switch provided by the invention A-A line sectional structure schematic diagram in Fig. 3.
Fig. 5 is MEMS capacitance switch provided by the invention B-B line sectional structure schematic diagram in Fig. 3.
Fig. 6 is MEMS capacitance switch Up state equivalent circuit diagram provided by the invention.
Fig. 7 (a) is MEMS capacitance switch the one Down state equivalent circuit diagram provided by the invention.
Fig. 7 (b) is MEMS capacitance switch the 2nd Down state equivalent circuit diagram provided by the invention.
Fig. 7 (c) is MEMS capacitance switch the 3rd Down state equivalent circuit diagram provided by the invention.
Fig. 8 is the insertion loss the simulation results of MEMS capacitance switch Up state provided by the invention.
Fig. 9 is MEMS capacitance switch Down state isolation the simulation results provided by the invention.
Embodiment
A kind of MEMS capacitance switch, as shown in Figures 3 to 5, comprise that a surface has the substrate 7 of insulating barrier 8, there is the signal transmssion line 9 that electric conducting material is made in the centre position on insulating barrier 8 surfaces, there is respectively ground electrode 13-1 and a 13-2 who is parallel to signal transmssion line 9 on insulating barrier 8 surfaces of signal transmssion line 9 both sides, be coated with one deck dielectric layer 10 at the surperficial holostrome of signal transmssion line 9, be provided with the first metal area of coverage 11-2 on the surface of dielectric layer 10, the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, wherein the first metal area of coverage 11-2 is between the second metal area of coverage 11-1 and the 3rd metal area of coverage 11-3, be provided with the first fixed anchor point 12-1 on the first ground electrode 13-1 surface, be provided with the second fixed anchor point 12-2 on the second ground electrode 13-2 surface, between the first fixed anchor point 12-1 and the second fixed anchor point 12-2, be connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode 4 is positioned at the first metal area of coverage 11-2 top, the second drive electrode 5 is positioned at the second metal area of coverage 11-1 top, the 3rd drive electrode 6 is positioned at the 3rd metal area of coverage 11-3 top, and the area of the first drive electrode 4 is less than the area of the second drive electrode 5, the area of the second drive electrode 5 is less than the area of the 3rd drive electrode 6,, the area of three drive electrodes is less than respectively the area of corresponding with it metal cladding, in the first drive electrode 4 two limits corresponding with signal transmssion line 9 both sides, adopt the first clamped beam 1-1 to be connected with the first fixed anchor point 12-1 on one side, another side adopts the second clamped beam 1-2 to be connected with the second fixed anchor point 12-2, between the second drive electrode 5 and the first drive electrode 4, adopt the first cantilever beam 2 to be connected, between the 3rd drive electrode 6 and the first drive electrode 4, adopt two the second cantilever beams 3 to be connected, distance between distance between the second drive electrode 5 and the second metal area of coverage 11-1 and the 3rd drive electrode 6 and the 3rd metal area of coverage 11-3 equates, and is greater than the distance between the first drive electrode 4 and the first metal area of coverage 11-2.
In such scheme, each several part size is as follows:
The length of signal transmssion line 9 × wide × thick be 1 μ m × 2, ㎜ × 100 μ m, insulating medium layer 10 for thickness be that 0.35 μ m, material are silicon nitride (Si
3n
4), article two, ground electrode 12-1, the length of 12-2 × wide × thick is 1 μ m × 2, ㎜ × 60 μ m, the length of the first drive electrode 4 × wide × thick is 40 μ m × 2, μ m × 60 μ m, two clamped beam 1-1, the length of 1-2 × wide × thick is 60 μ m × 2, μ m × 10 μ m, the length of the second drive electrode 5 × wide × thick is 60 μ m × 2, μ m × 60 μ m, the length of cantilever beam 2 or 3 × wide × thick is 60 μ m × 2, μ m × 10 μ m, the length of the 3rd drive electrode 6 × wide × thick is 100 μ m × 2, μ m × 60 μ m, the first drive electrode 4 is 2 μ m with the spacing of signal transmssion line 9, second and the spacing of the 3rd drive electrode and signal transmssion line 9 be 6 μ m, the thickness of three metal claddings is 0.05 μ m, the length of the first metal cladding × wide is 100 μ m × 100 μ m, second, the length of three metal claddings × wide is 400 μ m × 100 μ m.
As shown in Figure 8 and Figure 9, this MEMS capacitance switch can work in 3 frequency ranges the performance parameter simulation result of switch in 30GHz, and the Insertion Loss of each frequency range is all less than 0.25dB, and isolation is all higher than 37dB.
Claims (1)
1. a MEMS capacitance switch, comprise that a surface has the substrate of insulating barrier (8) (7), centre position on insulating barrier (8) surface has the signal transmssion line (9) that electric conducting material is made, there is respectively a ground electrode that is parallel to signal transmssion line (9) (13 ?1 and 13 ?2) on insulating barrier (8) surface of signal transmssion line (9) both sides, be coated with one deck dielectric layer (10) at the surperficial holostrome of signal transmssion line (9), be provided with the first metal area of coverage (11 ?2) on the surface of dielectric layer (10), the second metal area of coverage (11 ?1) and the 3rd metal area of coverage (11 ?3), wherein the first metal area of coverage (11 ?2) is positioned between the second metal area of coverage (11 ?1) and the 3rd metal area of coverage (11 ?3), be provided with the first fixed anchor point (12 ?1) on the first ground electrode (13 ?1) surface, be provided with the second fixed anchor point (12 ?2) on the second ground electrode (13 ?2) surface, between the first fixed anchor point (12 ?1) and the second fixed anchor point (12 ?2), be connected with a drive electrode structure, described drive electrode structure comprises three drive electrodes, wherein the first drive electrode (4) is positioned at the first metal area of coverage (11 ?2) top, the second drive electrode (5) is positioned at the second metal area of coverage (11 ?1) top, the 3rd drive electrode (6) is positioned at the 3rd metal area of coverage (11 ?3) top, and the area of the first drive electrode (4) is less than the area of the second drive electrode (5), the area of the second drive electrode (5) is less than the area of the 3rd drive electrode (6), the area of three drive electrodes is less than respectively the area of corresponding with it metal cladding, in the first drive electrode (4) two limits corresponding with signal transmssion line (9) both sides, adopt on one side the first clamped beam (1 ?1) and the first fixed anchor point (12 ?1) to be connected, another side adopts the second clamped beam (1 ?2) and the second fixed anchor point (12 ?2) to be connected, between the second drive electrode (5) and the first drive electrode (4), adopt the first cantilever beam (2) to be connected, between the 3rd drive electrode (6) and the first drive electrode (4), adopt two the second cantilever beams (3) to be connected, distance between distance between the second drive electrode (5) and the second metal area of coverage (11 ?1) and the 3rd drive electrode (6) and the 3rd metal area of coverage (11 ?3) equates, and is greater than the distance between the first drive electrode (4) and the first metal area of coverage (11 ?2).
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| CN104821800A (en) * | 2015-04-28 | 2015-08-05 | 电子科技大学 | Micro-electromechanical system (MEMS) piezoelectric resonator utilizing double resonance elements to offset feed-through flux |
| CN104916502A (en) * | 2015-05-15 | 2015-09-16 | 电子科技大学 | Horizontal double-beam DC contact type series MEMS switch |
| CN105575734A (en) * | 2015-12-23 | 2016-05-11 | 北京时代民芯科技有限公司 | Radio frequency micro-electro-mechanical system (MEMS) switch and fabrication method thereof |
| CN106373830A (en) * | 2016-11-21 | 2017-02-01 | 清华大学 | Capacitive radio-frequency micro-electromechanical system switch with signal lines and drive lines separated |
| CN107430963A (en) * | 2015-02-05 | 2017-12-01 | 卡文迪什动力有限公司 | Utilize the DVC of the MIM in anchoring piece |
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| US10163566B2 (en) | 2015-02-05 | 2018-12-25 | Cavendish Kinetics, Inc. | DVC utilizing MIMS in the anchor |
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| CN105575734A (en) * | 2015-12-23 | 2016-05-11 | 北京时代民芯科技有限公司 | Radio frequency micro-electro-mechanical system (MEMS) switch and fabrication method thereof |
| CN105575734B (en) * | 2015-12-23 | 2018-11-06 | 北京时代民芯科技有限公司 | A kind of RF MEMS Switches and its manufacturing method |
| CN106373830A (en) * | 2016-11-21 | 2017-02-01 | 清华大学 | Capacitive radio-frequency micro-electromechanical system switch with signal lines and drive lines separated |
| CN109346381A (en) * | 2018-11-26 | 2019-02-15 | 清华大学 | A kind of trapezoidal RF MEMS Switches with upper FGS floating gate structure |
| CN110419562A (en) * | 2019-09-02 | 2019-11-08 | 四川长虹电器股份有限公司 | The changeable radio frequency thawing apparatus for accessing parallel plate suqare |
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| US11811121B2 (en) | 2019-11-29 | 2023-11-07 | Beijing Boe Sensor Technology Co., Ltd. | Electronic device comprising a dielectric substrate having a voltage adjustable phase shifter disposed with respect to the substrate and a manufacturing method |
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| CN115176382B (en) * | 2021-01-28 | 2023-10-27 | 京东方科技集团股份有限公司 | Phase shifter and antenna |
| WO2023159342A1 (en) * | 2022-02-22 | 2023-08-31 | 京东方科技集团股份有限公司 | Micro-electro-mechanical system switch and manufacturing method therefor |
| CN117497990A (en) * | 2024-01-02 | 2024-02-02 | 上海安其威微电子科技有限公司 | Slow wave delay line and chip |
| CN117497990B (en) * | 2024-01-02 | 2024-03-08 | 上海安其威微电子科技有限公司 | Slow wave delay line and chip |
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