CN107369866A - A kind of high-isolation novel capacitor switch - Google Patents
A kind of high-isolation novel capacitor switch Download PDFInfo
- Publication number
- CN107369866A CN107369866A CN201710554854.8A CN201710554854A CN107369866A CN 107369866 A CN107369866 A CN 107369866A CN 201710554854 A CN201710554854 A CN 201710554854A CN 107369866 A CN107369866 A CN 107369866A
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- CN
- China
- Prior art keywords
- switch
- insulating barrier
- signal wire
- ground wire
- wire
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
Abstract
The present invention relates to a kind of high-isolation novel capacitor switch, belong to RF switch technical field.Including co-plane waveguide CPW transmission lines and switch beam, the co-plane waveguide transmission line is by substrate, insulating barrier, ground wire and signal line group into, insulating barrier is located above substrate, signal wire is located at centre position above insulating barrier, ground wire is spaced apart with signal wire and is arranged symmetrically in the both ends above insulating barrier, the switch beam by clamped beam and anchor district's groups into, it is connected across by anchor area between ground wire, the signal wire is located at switch beam underlying surfaces and is provided with dielectric layer, the capacitance switch uses electrostatic drive, its ground wire connects direct current ground terminal, signal wire on-load voltage, on the clamped beam four size identical circular arc gap are surrounded by close to anchor area；The present invention increases inductance, realizes the reduction of resonant frequency and the lifting of isolation by changing fixed beam structure.
Description
Technical field
The present invention relates to RF switch technical field, more particularly to a kind of high-isolation novel capacitor to switch.
Background technology
Under the promotion of globalization of world economy, the information industry using wireless communication technology as core enters booming
Stage.People for the demand more and more higher of communication, urgently wish can it is efficient, convenient, obtain information exactly.So
And a large amount of passive splitter parts include the resistance that switch, wave filter, antenna, variable capacitance, inductance etc. but turn into system compact
Hinder.
Frequency-adjustable device can effectively transmit the useful signal of special frequency channel, reduce mutually dry between each communication channel
Disturb, fully using frequency spectrum resource, reduce frequency spectrum waste and ensure communication equipment normal work.The core composition of adjustable device is penetrated
The research of frequency switch is an important directions of wireless communication devices development.The performance of RF switch to adjustable device, or even it is whole
Individual communication system plays the role of important.The effective exploitation of high band is utilized adjustable to tunable filter, reconfigurable antenna etc.
Radio-frequency devices design proposes higher requirement.Therefore, it is necessary to which more advanced and mature switching technique ensures its realization.
RF MEMSs have the advantages that inexpensive, in light weight and small size, can efficiently solve passive device quality
Greatly, bulky problem.Meanwhile with the rise of working frequency, radio-frequency devices are to size, precision, firing frequency performance and Gao Ke
Higher requirement is proposed by property etc..Its excellent performance is applied in many fields.RF MEMS technologies can be realized
The miniaturization of each communication component and integrated, the processing speed of signal can be improved and reduce the power consumption and body of communication system
Product, by more and more extensive concern.
RF mems switch small volumes, light weight is insensitive to acceleration, no DC power, can low cost silicon or
Manufactured on person's glass, than GaAs technology cut-off frequency high power, there is excellent isolation and insertion loss in microwave frequency.
But existing capacitance switch structure, the switch beam portion of electrical current density between ground wire and signal wire is very high, and this is right
Reduce the insertion loss of switch and improve isolation and suffer from serious influence.
The content of the invention
The problem of for shortcomings and deficiencies in the prior art, the present invention propose a kind of high-isolation novel capacitor switch,
By changing fixed beam structure, inductance is increased, realizes the reduction of resonant frequency and the lifting of isolation.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of high-isolation novel capacitor switch, including co-plane waveguide CPW transmission lines and switch beam, the co-plane waveguide pass
Defeated line is by substrate, insulating barrier, ground wire and signal line group into insulating barrier is located above substrate, during signal wire is located above insulating barrier
Between position, ground wire is spaced apart with signal wire and is arranged symmetrically in the both ends above insulating barrier, and the switch beam is by clamped beam and anchor
District's groups are between being connected across ground wire by anchor area, the signal wire is located at switch beam underlying surfaces and is provided with dielectric layer, the electric capacity
Switch use electrostatic drive, its ground wire connection direct current ground terminal, signal wire on-load voltage, and close anchor area surrounding is set on the clamped beam
There are four size identical circular arc gap.
Further, the clamped beam is provided with square release aperture.
The present invention has the advantages that：By setting circular arc gap on clamped beam, change traditional switch beam electricity
The high structure of current density so that capacitance switch insertion loss reduces, isolation is higher；High isolation degree can be reached on high band,
Frequency spectrum resource is fully utilized, frequency spectrum waste is reduced and ensures communication equipment normal work；Using electrostatic drive, power consumption is lower, rings
Should be faster smaller；The present invention also has the advantages that the linearity is good, microwave property is good, more lighting.
Brief description of the drawings
Fig. 1 is overall structure diagram of the present invention；
Fig. 2 is switch beam top view of the present invention；
Fig. 3 is simulation curve figure of the present invention；
Fig. 4 is parameter computational chart of the present invention.
Embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content of the invention lectured has been read, people in the art
Member can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Scope.
As illustrated, a kind of high-isolation novel capacitor switchs a kind of high-isolation novel capacitor switch, including copline
Waveguide CPW transmission lines 1 and switch beam 2, the co-plane waveguide transmission line 1 is by substrate 11, insulating barrier 12, ground wire 13 and signal wire
14 compositions, insulating barrier 12 are located at the top of substrate 11, and signal wire 14 is located at the top centre position of insulating barrier 12, ground wire 13 and signal wire
14 are spaced apart and are arranged symmetrically in the both ends of the top of insulating barrier 12, and the switch beam 2 is made up of clamped beam 21 and anchor area 22, passed through
Anchor area 22 is connected across between ground wire 13, and the signal wire 14 is located at the underlying surfaces of switch beam 2 and is provided with dielectric layer 31, and the electric capacity is opened
Pass uses electrostatic drive, its ground wire 13 connection direct current ground terminal, the on-load voltage of signal wire 14.
On the clamped beam 21 four size identical circular arc gap are surrounded by close to anchor area 22；Set on clamped beam 21
There is square release aperture 41.
Specifically, the action of switch is provided by direct-current static electric power, wherein ground wire 13 connects direct current ground terminal, while makes switch beam
2 are similarly in ground state, are Top electrode；It is bottom electrode and signal wire 14 loads high voltage or low-voltage.When signal wire 14 adds
When carrying high voltage, voltage difference is produced between signal wire 14 and switch beam 2, due to the attraction of electrostatic force, clamped beam 21 is by elastic shape
Change is close on dielectric layer 31, completes the drop-down of switch beam 2.Wherein, dielectric layer 31 is provided to underground state when switch beam 2 pulls down
Electric capacity.
The state on switch（Up states）When, electric capacity is smaller between signal wire 14 and the switch beam 2 for being connected across ground wire 13, radio frequency letter
Number pass through the structure onwards transmission of transmission line 1.When switch is pulled down by electrostatic force to be closed（Down states), switch beam 2 is close to
Dielectric layer 31, capacitance structure is formed, causes radiofrequency signal shorted to earth, so as to realize the blocking of radiofrequency signal.
From its simulation result, it is apparent that this it is novel switched can reach very high isolation on high band,
Especially in 35GHz resonant frequencies, switch isolation degree emulates the isolation for reaching 82dB.
The present invention reduces the portion of electrical current of switch beam 2 between ground wire 13 and signal wire 14 by changing the structure of clamped beam 21
Density, inductance is increased, it is achieved thereby that the reduction of resonant frequency and the lifting of isolation.
Claims (2)
- A kind of 1. high-isolation novel capacitor switch, it is characterised in that：Including co-plane waveguide CPW transmission lines and switch beam, institute Co-plane waveguide transmission line is stated by substrate, insulating barrier, ground wire and signal line group into insulating barrier is located above substrate, signal wire position The centre position above insulating barrier, ground wire are spaced apart with signal wire and are arranged symmetrically in the both ends above insulating barrier, the switch Beam is by clamped beam with anchor district's groups between being connected across ground wire by anchor area, the signal wire is located at switch beam underlying surfaces and is provided with Dielectric layer, the capacitance switch use electrostatic drive, its ground wire connection direct current ground terminal, signal wire on-load voltage, the clamped beam It is upper to be surrounded by four size identical circular arc gap close to anchor area.
- A kind of 2. high-isolation novel capacitor switch according to claim 1, it is characterised in that：The clamped beam is provided with Square release aperture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710554854.8A CN107369866A (en) | 2017-07-10 | 2017-07-10 | A kind of high-isolation novel capacitor switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710554854.8A CN107369866A (en) | 2017-07-10 | 2017-07-10 | A kind of high-isolation novel capacitor switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107369866A true CN107369866A (en) | 2017-11-21 |
Family
ID=60306414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710554854.8A Pending CN107369866A (en) | 2017-07-10 | 2017-07-10 | A kind of high-isolation novel capacitor switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107369866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112332049A (en) * | 2020-10-28 | 2021-02-05 | 京东方科技集团股份有限公司 | Phase shifter and method for manufacturing the same |
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
-
2017
- 2017-07-10 CN CN201710554854.8A patent/CN107369866A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112332049A (en) * | 2020-10-28 | 2021-02-05 | 京东方科技集团股份有限公司 | Phase shifter and method for manufacturing the same |
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
| CN115377631B (en) * | 2022-09-16 | 2023-11-03 | 北京邮电大学 | Radio frequency MEMS switch |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171121 |
|
| WD01 | Invention patent application deemed withdrawn after publication |