CN203398032U - RF-MEMS switch based on photonic crystal - Google Patents

RF-MEMS switch based on photonic crystal Download PDF

Info

Publication number
CN203398032U
CN203398032U CN201320529312.2U CN201320529312U CN203398032U CN 203398032 U CN203398032 U CN 203398032U CN 201320529312 U CN201320529312 U CN 201320529312U CN 203398032 U CN203398032 U CN 203398032U
Authority
CN
China
Prior art keywords
dielectric layer
rf
silicon dioxide
mems switch
dioxide layer
Prior art date
Application number
CN201320529312.2U
Other languages
Chinese (zh)
Inventor
宋明歆
吴蕊
Original Assignee
哈尔滨理工大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 哈尔滨理工大学 filed Critical 哈尔滨理工大学
Priority to CN201320529312.2U priority Critical patent/CN203398032U/en
Application granted granted Critical
Publication of CN203398032U publication Critical patent/CN203398032U/en

Links

Abstract

The utility model relates to an RF-MEMS switch, in particular to an RF-MEMS switch based on photonic crystals, for solving the problems of the existing RF-MEMS such as fixed working frequency range, large return loss during signal transmission process, strong interference on signals and reduced switch working efficiency. The RF-MEMS switch based on photonic crystals comprises a silicon substrate, a silicon dioxide layer, two Al electrodes, a dielectric layer, a metal electrode and a transmission line, wherein the silicon dioxide layer is completely covered on the upper surface of the silicon substrate; both sides of the upper surface of the silicon dioxide layer are respectively coated with one Al electrode; the metal electrode is an N type, and both ends of the metal electrode are arranged on the upper surfaces of the Al electrodes; the dielectric layer is covered in the middle of the upper surface of the silicon dioxide layer; the transmission line is covered in the middle of the silicon dioxide layer and the dielectric layer; and the dielectric layer is of an photonic crystal structure comprising a Si3N4 dielectric layer and a SiO2 dielectric layer, and the two dielectric layers are arranged parallelly and alternately. The RF-MEMS switch based on photonic crystal is used as the switch for the RF-MEMS.

Description

RF-MEMS switch based on photonic crystal

Technical field

The utility model relates to a kind of RF-MEMS switch based on photonic crystal.

Background technology

RF radio frequency, Radio Frequency, is called for short RF.Radio frequency is exactly radio-frequency current, and it is that a kind of high-frequency ac changes electromagnetic abbreviation.

So-called RF-MEMS is the RF product with the processing of MEMS technology.RF-MEMS technology be expected to realize and the height of MMIC integrated, make to make collection, processing, the transmission of collection information, the system integrated chip (SOC) of processing and be executed in one becomes possibility.By the theory of microelectric technique, not only can carry out wafer level production, product mass, and have that low price, volume are little, lightweight, high reliability.RF-MEMS device mainly can be divided into two large classes: a class is called passive MEMS, and its structure is without movable part; Another kind ofly be called active MEMS, have movable structure, under electric stress effect, can there is deformation or movement in movable part.Its key technology of processing is divided into four large classes: plane machining technology, bulk silicon etching technology, solid phase bonding techniques, LIGA technology.

Tradition RF-MEMS operating frequency range is more fixing, and in signals transmission, return loss is larger, easily produces harmonic wave, and signal is had compared with strong jamming, has reduced switch efficiency.

Utility model content

The utility model object is to fix in order to solve existing RF-MEMS operating frequency range, in signals transmission, return loss is larger, easily produces harmonic wave, and signal is had compared with strong jamming, reduced the problem of switch efficiency, a kind of RF-MEMS switch based on photonic crystal is provided.

RF-MEMS switch based on photonic crystal described in the utility model, it comprises silicon substrate, silicon dioxide layer, two Al electrodes, dielectric layer, metal electrode and transmission lines; Silicon substrate is positioned at bottom, and silicon dioxide layer covers on the upper surface of silicon substrate completely; The both sides of the upper surface of silicon dioxide layer are covered with respectively an Al electrode; Metal electrode is N-shaped, and the two ends of metal electrode are arranged on the upper surface of Al electrode; Dielectric layer overlays on the centre of the upper surface of silicon dioxide layer, and dielectric layer is wide identical with silicon dioxide layer, the center superposition of dielectric layer and silicon dioxide layer; The centre of silicon dioxide layer and dielectric layer is covered with transmission line;

Described dielectric layer is photon crystal structure, and this photon crystal structure comprises Si 3n 4dielectric layer and SiO 2dielectric layer, and Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged.

Advantage of the present utility model: a kind of RF-MEMS switch based on photonic crystal the utility model proposes, by Si 3n 4uniform period distribution SiO in dielectric layer 2, forming photon crystal structure, return loss obviously reduces, and the harmonic wave effectively producing in Inhibitory signal transmitting procedure reduces high order harmonic component and disturbs, thereby improves effectiveness.

Accompanying drawing explanation

Fig. 1 and Fig. 2 are the structural representations of the RF-MEMS switch based on photonic crystal described in the utility model;

Fig. 3 is the structural representation of embodiment four;

Fig. 4 is the structural representation of embodiment two and embodiment three;

Fig. 5 is that dielectric layer is Si 3n 4time microwave parameters;

Fig. 6 is that dielectric layer is SiO 2time microwave parameters;

Fig. 7 is the microwave parameters of dielectric layer described in the utility model.

Embodiment

Embodiment one: below in conjunction with Fig. 1, present embodiment is described, the RF-MEMS switch based on photonic crystal described in present embodiment, it comprises silicon substrate 1, silicon dioxide layer 2, two Al electrodes 3, dielectric layer 4, metal electrode 5 and transmission lines 6; Silicon substrate 1 is positioned at bottom, and silicon dioxide layer 2 covers on the upper surface of silicon substrate 1 completely; The both sides of the upper surface of silicon dioxide layer 2 are covered with respectively an Al electrode 3; Metal electrode 5 is N-shaped, and the two ends of metal electrode 5 are arranged on the upper surface of Al electrode 3; Dielectric layer 4 overlays on the centre of the upper surface of silicon dioxide layer 2, and dielectric layer 4 is wide identical with silicon dioxide layer 2, the center superposition of dielectric layer 4 and silicon dioxide layer 2; The centre of silicon dioxide layer 2 and dielectric layer 4 is covered with transmission line 6;

Described dielectric layer 4 is photon crystal structure, and this photon crystal structure comprises Si 3n 4dielectric layer and SiO 2dielectric layer, and Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged.

Embodiment two: below in conjunction with Fig. 4, present embodiment is described, present embodiment is described further execution mode one, Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged, described Si 3n 4the width of dielectric layer is 25 μ m.

Embodiment three: below in conjunction with Fig. 4, present embodiment is described, present embodiment is described further execution mode one, Si3N4 dielectric layer and SiO 2dielectric layer time-interleaved is arranged, described SiO 2the width of dielectric layer is 25 μ m.

Embodiment four: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further execution mode one, described metal electrode 5 WeinXing, two ends are Al post, the Al beam hanging above can move up and down along Al post.

Embodiment five: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further execution mode one, described transmission line 6 is CPW co-planar waveguide.

The course of work: making alive between metal electrode 5 and silicon substrate 1, when metal electrode 5 moves downward, contact with dielectric layer 4, signal is derived by metal electrode 5; Making alive not, signal passes to the other end from switch one end.

In prior art, conventionally use Si 3n 4as dielectric material, but common can only reach-24dB of return loss, even if use SiO 2as dielectric material, also cannot reach-25dB, because return loss has been reacted the transmission characteristic of signal, affect to a great extent switch performance, so wish switch return loss to be reduced to minimum.And harmonic wave and first-harmonic difference very little, high order harmonic component can produce be disturbed signal equally.

In the present invention, utilize at Si 3n 4middle period profile SiO 2, reducing switch return loss, can reach-28dB, effectively suppress high order harmonic component, thereby improve switch performance.

As shown in Figure 5, dielectric layer is Si 3n 4, first-harmonic is-24.86dB that second harmonic is-20.2dB that return loss is larger, and difference is only 4.66dB.

As shown in Figure 6, dielectric layer is SiO 2, first-harmonic is-24.89dB that second harmonic is-20.2dB that return loss is larger, and difference is only 4.69dB.

As shown in Figure 7, dielectric layer is at Si 3n 4uniform period distribution SiO in dielectric layer 2, first-harmonic is-28dB, and second harmonic is-21.8dB, and return loss is less, and difference reaches 6.2dB, has effectively suppressed harmonic wave.

In dielectric layer, Si 3n 4and SiO 2periodic arrangement, experiment shows, and along with the cycle increases, first-harmonic reflection first diminishes and becomes afterwards large, and when the cycle is 50 μ m, return loss reaches minimum.So select the suitable cycle can effectively suppress harmonic wave, produce, improve effectiveness.

Alternative: Si 3n 4and SiO 2dielectric layer can adopt SMD, and in paster situation, circular have good forbidden band characteristic compared with triangle and square.

Claims (5)

1. the RF-MEMS switch based on photonic crystal, is characterized in that, it comprises silicon substrate (1), silicon dioxide layer (2), two Al electrodes (3), dielectric layer (4), metal electrode (5) and transmission line (6); Silicon substrate (1) is positioned at bottom, and silicon dioxide layer (2) covers on the upper surface of silicon substrate (1) completely; The both sides of the upper surface of silicon dioxide layer (2) are covered with respectively an Al electrode (3); Metal electrode (5) is N-shaped, and the two ends of metal electrode (5) are arranged on the upper surface of Al electrode (3); Dielectric layer (4) overlays on the centre of the upper surface of silicon dioxide layer (2), and dielectric layer (4) is wide identical with silicon dioxide layer (2), the center superposition of dielectric layer (4) and silicon dioxide layer (2); The centre of silicon dioxide layer (2) and dielectric layer (4) is covered with transmission line (6);
Described dielectric layer (4) is photon crystal structure, and this photon crystal structure comprises Si 3n 4dielectric layer and SiO 2dielectric layer, and Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged.
2. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged, described Si 3n 4the width of dielectric layer is 25 μ m.
3. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that Si 3n 4dielectric layer and SiO 2dielectric layer time-interleaved is arranged, described SiO 2the width of dielectric layer is 25 μ m.
4. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that, described metal electrode (5) WeinXing, two ends are Al post, and the Al beam hanging above can move up and down along Al post.
5. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that, described transmission line (6) is CPW co-planar waveguide.
CN201320529312.2U 2013-08-28 2013-08-28 RF-MEMS switch based on photonic crystal CN203398032U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320529312.2U CN203398032U (en) 2013-08-28 2013-08-28 RF-MEMS switch based on photonic crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320529312.2U CN203398032U (en) 2013-08-28 2013-08-28 RF-MEMS switch based on photonic crystal

Publications (1)

Publication Number Publication Date
CN203398032U true CN203398032U (en) 2014-01-15

Family

ID=49909545

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320529312.2U CN203398032U (en) 2013-08-28 2013-08-28 RF-MEMS switch based on photonic crystal

Country Status (1)

Country Link
CN (1) CN203398032U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037027A (en) * 2014-06-26 2014-09-10 电子科技大学 MEMS capacitive switch
CN105788971A (en) * 2016-03-16 2016-07-20 上海交通大学 Silicon substrate based compact MEMS capacitive radio-frequency switch and production method
CN108206319A (en) * 2017-12-05 2018-06-26 中国科学院微电子研究所 A kind of suspension structure microwave filter and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037027A (en) * 2014-06-26 2014-09-10 电子科技大学 MEMS capacitive switch
CN104037027B (en) * 2014-06-26 2016-02-03 电子科技大学 A kind of MEMS capacitance switch
CN105788971A (en) * 2016-03-16 2016-07-20 上海交通大学 Silicon substrate based compact MEMS capacitive radio-frequency switch and production method
CN108206319A (en) * 2017-12-05 2018-06-26 中国科学院微电子研究所 A kind of suspension structure microwave filter and preparation method thereof

Similar Documents

Publication Publication Date Title
Li et al. A multi-band/UWB MIMO/diversity antenna with an enhance isolation using radial stub loaded resonator
Wu et al. Design of novel dual-band bandpass filter with microstrip meander-loop resonator and CSRR DGS
US20120229233A1 (en) Dielectric Waveguide Filter
US9455392B2 (en) Method of fabricating a coplanar waveguide device including removal of spurious microwave modes via flip-chip crossover
Lee et al. Low-loss LTCC cavity filters using system-on-package technology at 60 GHz
US7692516B2 (en) Phase shifter with photonic band gap structure using ferroelectric thin film
Xue et al. Novel 1-D microstrip PBG cells
EP2203976B1 (en) Lamb wave resonator
Zhang et al. Design of microstrip dual-mode filters based on source-load coupling
US20110001584A1 (en) Radio-frequency filter device using dielectric waveguide with multiple resonant modes
KR100546759B1 (en) Distributed Analog phase shifter using etched ferroelectric thin film and method for manufacturing the same
US7847669B2 (en) Micro-electromechanical switched tunable inductor
CN101304108B (en) Dual frequency resonator and dual frequency filter
Wu et al. Design of a substrate integrated waveguide balun filter based on three-port coupled-resonator circuit model
US9685696B2 (en) Antenna and electronic device
US8198953B2 (en) Two-dimensional left-handed metamaterial
JP5510694B1 (en) Elastic wave filter device and duplexer
CN102157792B (en) Electric control radiation directional diagram reconfigurable antenna
US6549097B2 (en) Electrical resonator with a ribbon loop and variable capacitors formed at the parallel ends
CN101308946B (en) Novel wideband microband coupler based on defect place structure
US9608564B2 (en) Metamaterial resonator based device
KR102066313B1 (en) Passive microelectronic components, capable of allowing a radio-frequency or hyper-frequency signal to travel in a single direction
Gong et al. Precision fabrication techniques and analysis on high-Q evanescent-mode resonators and filters of different geometries
Bonache et al. Super compact split ring resonators CPW band pass filters
DE102012224460B4 (en) Stable-Mounting-Volume Acoustic Wave Resonator arrangement with a bridge

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EXPY Termination of patent right or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140115

Termination date: 20140828