CN203398032U - RF-MEMS switch based on photonic crystal - Google Patents
RF-MEMS switch based on photonic crystal Download PDFInfo
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- CN203398032U CN203398032U CN201320529312.2U CN201320529312U CN203398032U CN 203398032 U CN203398032 U CN 203398032U CN 201320529312 U CN201320529312 U CN 201320529312U CN 203398032 U CN203398032 U CN 203398032U
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- dielectric layer
- silicon dioxide
- layer
- mems switch
- switch based
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Abstract
The utility model relates to an RF-MEMS switch, in particular to an RF-MEMS switch based on photonic crystals, for solving the problems of the existing RF-MEMS such as fixed working frequency range, large return loss during signal transmission process, strong interference on signals and reduced switch working efficiency. The RF-MEMS switch based on photonic crystals comprises a silicon substrate, a silicon dioxide layer, two Al electrodes, a dielectric layer, a metal electrode and a transmission line, wherein the silicon dioxide layer is completely covered on the upper surface of the silicon substrate; both sides of the upper surface of the silicon dioxide layer are respectively coated with one Al electrode; the metal electrode is an N type, and both ends of the metal electrode are arranged on the upper surfaces of the Al electrodes; the dielectric layer is covered in the middle of the upper surface of the silicon dioxide layer; the transmission line is covered in the middle of the silicon dioxide layer and the dielectric layer; and the dielectric layer is of an photonic crystal structure comprising a Si3N4 dielectric layer and a SiO2 dielectric layer, and the two dielectric layers are arranged parallelly and alternately. The RF-MEMS switch based on photonic crystal is used as the switch for the RF-MEMS.
Description
Technical field
The utility model relates to a kind of RF-MEMS switch based on photonic crystal.
Background technology
RF radio frequency, Radio Frequency, is called for short RF.Radio frequency is exactly radio-frequency current, and it is that a kind of high-frequency ac changes electromagnetic abbreviation.
So-called RF-MEMS is the RF product with the processing of MEMS technology.RF-MEMS technology be expected to realize and the height of MMIC integrated, make to make collection, processing, the transmission of collection information, the system integrated chip (SOC) of processing and be executed in one becomes possibility.By the theory of microelectric technique, not only can carry out wafer level production, product mass, and have that low price, volume are little, lightweight, high reliability.RF-MEMS device mainly can be divided into two large classes: a class is called passive MEMS, and its structure is without movable part; Another kind ofly be called active MEMS, have movable structure, under electric stress effect, can there is deformation or movement in movable part.Its key technology of processing is divided into four large classes: plane machining technology, bulk silicon etching technology, solid phase bonding techniques, LIGA technology.
Tradition RF-MEMS operating frequency range is more fixing, and in signals transmission, return loss is larger, easily produces harmonic wave, and signal is had compared with strong jamming, has reduced switch efficiency.
Utility model content
The utility model object is to fix in order to solve existing RF-MEMS operating frequency range, in signals transmission, return loss is larger, easily produces harmonic wave, and signal is had compared with strong jamming, reduced the problem of switch efficiency, a kind of RF-MEMS switch based on photonic crystal is provided.
RF-MEMS switch based on photonic crystal described in the utility model, it comprises silicon substrate, silicon dioxide layer, two Al electrodes, dielectric layer, metal electrode and transmission lines; Silicon substrate is positioned at bottom, and silicon dioxide layer covers on the upper surface of silicon substrate completely; The both sides of the upper surface of silicon dioxide layer are covered with respectively an Al electrode; Metal electrode is N-shaped, and the two ends of metal electrode are arranged on the upper surface of Al electrode; Dielectric layer overlays on the centre of the upper surface of silicon dioxide layer, and dielectric layer is wide identical with silicon dioxide layer, the center superposition of dielectric layer and silicon dioxide layer; The centre of silicon dioxide layer and dielectric layer is covered with transmission line;
Described dielectric layer is photon crystal structure, and this photon crystal structure comprises Si
3n
4dielectric layer and SiO
2dielectric layer, and Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged.
Advantage of the present utility model: a kind of RF-MEMS switch based on photonic crystal the utility model proposes, by Si
3n
4uniform period distribution SiO in dielectric layer
2, forming photon crystal structure, return loss obviously reduces, and the harmonic wave effectively producing in Inhibitory signal transmitting procedure reduces high order harmonic component and disturbs, thereby improves effectiveness.
Accompanying drawing explanation
Fig. 1 and Fig. 2 are the structural representations of the RF-MEMS switch based on photonic crystal described in the utility model;
Fig. 3 is the structural representation of embodiment four;
Fig. 4 is the structural representation of embodiment two and embodiment three;
Fig. 5 is that dielectric layer is Si
3n
4time microwave parameters;
Fig. 6 is that dielectric layer is SiO
2time microwave parameters;
Fig. 7 is the microwave parameters of dielectric layer described in the utility model.
Embodiment
Embodiment one: below in conjunction with Fig. 1, present embodiment is described, the RF-MEMS switch based on photonic crystal described in present embodiment, it comprises silicon substrate 1, silicon dioxide layer 2, two Al electrodes 3, dielectric layer 4, metal electrode 5 and transmission lines 6; Silicon substrate 1 is positioned at bottom, and silicon dioxide layer 2 covers on the upper surface of silicon substrate 1 completely; The both sides of the upper surface of silicon dioxide layer 2 are covered with respectively an Al electrode 3; Metal electrode 5 is N-shaped, and the two ends of metal electrode 5 are arranged on the upper surface of Al electrode 3; Dielectric layer 4 overlays on the centre of the upper surface of silicon dioxide layer 2, and dielectric layer 4 is wide identical with silicon dioxide layer 2, the center superposition of dielectric layer 4 and silicon dioxide layer 2; The centre of silicon dioxide layer 2 and dielectric layer 4 is covered with transmission line 6;
Described dielectric layer 4 is photon crystal structure, and this photon crystal structure comprises Si
3n
4dielectric layer and SiO
2dielectric layer, and Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged.
Embodiment two: below in conjunction with Fig. 4, present embodiment is described, present embodiment is described further execution mode one, Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged, described Si
3n
4the width of dielectric layer is 25 μ m.
Embodiment three: below in conjunction with Fig. 4, present embodiment is described, present embodiment is described further execution mode one, Si3N4 dielectric layer and SiO
2dielectric layer time-interleaved is arranged, described SiO
2the width of dielectric layer is 25 μ m.
Embodiment four: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further execution mode one, described metal electrode 5 WeinXing， two ends are Al post, the Al beam hanging above can move up and down along Al post.
Embodiment five: below in conjunction with Fig. 1, present embodiment is described, present embodiment is described further execution mode one, described transmission line 6 is CPW co-planar waveguide.
The course of work: making alive between metal electrode 5 and silicon substrate 1, when metal electrode 5 moves downward, contact with dielectric layer 4, signal is derived by metal electrode 5; Making alive not, signal passes to the other end from switch one end.
In prior art, conventionally use Si
3n
4as dielectric material, but common can only reach-24dB of return loss, even if use SiO
2as dielectric material, also cannot reach-25dB, because return loss has been reacted the transmission characteristic of signal, affect to a great extent switch performance, so wish switch return loss to be reduced to minimum.And harmonic wave and first-harmonic difference very little, high order harmonic component can produce be disturbed signal equally.
In the present invention, utilize at Si
3n
4middle period profile SiO
2, reducing switch return loss, can reach-28dB, effectively suppress high order harmonic component, thereby improve switch performance.
As shown in Figure 5, dielectric layer is Si
3n
4, first-harmonic is-24.86dB that second harmonic is-20.2dB that return loss is larger, and difference is only 4.66dB.
As shown in Figure 6, dielectric layer is SiO
2, first-harmonic is-24.89dB that second harmonic is-20.2dB that return loss is larger, and difference is only 4.69dB.
As shown in Figure 7, dielectric layer is at Si
3n
4uniform period distribution SiO in dielectric layer
2, first-harmonic is-28dB, and second harmonic is-21.8dB, and return loss is less, and difference reaches 6.2dB, has effectively suppressed harmonic wave.
In dielectric layer, Si
3n
4and SiO
2periodic arrangement, experiment shows, and along with the cycle increases, first-harmonic reflection first diminishes and becomes afterwards large, and when the cycle is 50 μ m, return loss reaches minimum.So select the suitable cycle can effectively suppress harmonic wave, produce, improve effectiveness.
Alternative: Si
3n
4and SiO
2dielectric layer can adopt SMD, and in paster situation, circular have good forbidden band characteristic compared with triangle and square.
Claims (5)
1. the RF-MEMS switch based on photonic crystal, is characterized in that, it comprises silicon substrate (1), silicon dioxide layer (2), two Al electrodes (3), dielectric layer (4), metal electrode (5) and transmission line (6); Silicon substrate (1) is positioned at bottom, and silicon dioxide layer (2) covers on the upper surface of silicon substrate (1) completely; The both sides of the upper surface of silicon dioxide layer (2) are covered with respectively an Al electrode (3); Metal electrode (5) is N-shaped, and the two ends of metal electrode (5) are arranged on the upper surface of Al electrode (3); Dielectric layer (4) overlays on the centre of the upper surface of silicon dioxide layer (2), and dielectric layer (4) is wide identical with silicon dioxide layer (2), the center superposition of dielectric layer (4) and silicon dioxide layer (2); The centre of silicon dioxide layer (2) and dielectric layer (4) is covered with transmission line (6);
Described dielectric layer (4) is photon crystal structure, and this photon crystal structure comprises Si
3n
4dielectric layer and SiO
2dielectric layer, and Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged.
2. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged, described Si
3n
4the width of dielectric layer is 25 μ m.
3. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that Si
3n
4dielectric layer and SiO
2dielectric layer time-interleaved is arranged, described SiO
2the width of dielectric layer is 25 μ m.
4. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that, described metal electrode (5) WeinXing， two ends are Al post, and the Al beam hanging above can move up and down along Al post.
5. the RF-MEMS switch based on photonic crystal according to claim 1, is characterized in that, described transmission line (6) is CPW co-planar waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320529312.2U CN203398032U (en) | 2013-08-28 | 2013-08-28 | RF-MEMS switch based on photonic crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320529312.2U CN203398032U (en) | 2013-08-28 | 2013-08-28 | RF-MEMS switch based on photonic crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203398032U true CN203398032U (en) | 2014-01-15 |
Family
ID=49909545
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320529312.2U Expired - Fee Related CN203398032U (en) | 2013-08-28 | 2013-08-28 | RF-MEMS switch based on photonic crystal |
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|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037027A (en) * | 2014-06-26 | 2014-09-10 | 电子科技大学 | MEMS capacitive switch |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN108206319A (en) * | 2017-12-05 | 2018-06-26 | 中国科学院微电子研究所 | A kind of suspension structure microwave filter and preparation method thereof |
-
2013
- 2013-08-28 CN CN201320529312.2U patent/CN203398032U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037027A (en) * | 2014-06-26 | 2014-09-10 | 电子科技大学 | MEMS capacitive switch |
| CN104037027B (en) * | 2014-06-26 | 2016-02-03 | 电子科技大学 | A kind of MEMS capacitance switch |
| CN105788971A (en) * | 2016-03-16 | 2016-07-20 | 上海交通大学 | Silicon substrate based compact MEMS capacitive radio-frequency switch and production method |
| CN108206319A (en) * | 2017-12-05 | 2018-06-26 | 中国科学院微电子研究所 | A kind of suspension structure microwave filter and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140115 Termination date: 20140828 |
|
| EXPY | Termination of patent right or utility model |