A kind of multilayer structure making with filtering performance
Technical field
The invention belongs to electronic technology field, particularly the multilayer structure making of a kind of miniaturization and filtering performance excellence.
Background technology
In RF application, a lot of local devices that all need miniaturisation high-performance and have filter function, wish that the energy of required frequency can pass through network, and maximum inhibition disturbs or other does not wish the frequency of seeing in terminal.
Along with the fast development of wireless communication technology and monolithic integrated microwave circuit, require electronic product to miniaturization, low cost, high-performance, the trend development of high integration.The stacked elements that how script is accounted for to a large amount of areas at planar circuit, in 3-D solid structure, is also the problem that will solve at present thereby filtering device is realized under minimum area.Multilayer structure making is with stacked circuit structure, to realize the function of filter circuit, technically by LTCC technique, realize, LTCC technology can provide for passive and active device the integrated platform of 3 D stereo, can realize the requirement of circuit three-dimensional, and ceramic component has good characteristic, can meet existing market to miniaturization, low cost, high performance requirement.
At present the filter structure body of domestic and international design has been carried out to a large amount of research, it is too large that most of structure low-frequency ranges take volume, and integrated level is not high, can not meet the requirement of miniaturization far away.In addition, current most of filter constructions, if suppress near clutter frequency passband, it is not enough that the decay in stopband just seems.Therefore, how to realize a kind of multilayer structure making with filtering performance, become one of industry urgent problem, prior art there is no associated description.
Summary of the invention
Technical problem to be solved by this invention is to provide the multilayer structure making with filtering performance that a kind of Out-of-band rejection degree is excellent, in-band insertion loss is little, reliability is high, integrated level is high, size is little.
It is as follows that the present invention solves the problems of the technologies described above taked technical scheme: a kind of multilayer structure making with filtering performance, this multilayer structure making integral body is a ceramic body, a plurality of dielectric layers are laminated in this ceramic body, specifically comprise top-level metallic ground G1, underlying metal ground G2, the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6,
Wherein top-level metallic ground G1, underlying metal ground G2 are single flat sheetmetal structure; the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 are double-deck rectangular coil loop construction, and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6 are double-level-metal plate structure;
The first coupling line inductance L 1 and the first capacity plate antenna C1 are in parallel, one end of the first coupling line inductance L 1 is connected with one end of the first capacity plate antenna C1, the other end of the other end of the first coupling line inductance L 1 and the first capacity plate antenna C1 is ground connection respectively, and above-mentioned two devices form the first resonator;
The second coupling line inductance L 2 and the second capacity plate antenna C2 are in parallel, one end of the second coupling line inductance L 2 is connected with one end of the second capacity plate antenna C2, the other end of the other end of the second coupling line inductance L 2 and the second capacity plate antenna C2 is ground connection respectively, and above-mentioned two devices form the second resonator;
The 3rd coupling line inductance L 3 and the 3rd capacity plate antenna C3 are in parallel, one end of the 3rd coupling line inductance L 3 is connected with one end of the 3rd capacity plate antenna C3, the other end of the other end of the 3rd coupling line inductance L 3 and the 3rd capacity plate antenna C3 is ground connection respectively, and above-mentioned two devices form the 3rd resonator;
The 4th coupling line inductance L 4 Yu Siping City plate capacitor C 4 are in parallel, one end of Yu Siping City, one end plate capacitor C 4 of the 4th coupling line inductance L 4 is connected, the other end of other end He Siping City plate capacitor C 4 of the 4th coupling line inductance L 4 is ground connection respectively, and above-mentioned two devices form the 4th resonator;
The 5th coupling line inductance L 5 and the 5th capacity plate antenna C5 are in parallel, and one end of the 5th coupling line inductance L 5 is connected with one end of the 5th capacity plate antenna C5, and the other end of the other end of the 5th coupling line inductance L 5 and the 5th capacity plate antenna C5 is ground connection respectively.Above-mentioned two devices form the 5th resonator;
The 6th coupling line inductance L 6 and the 6th capacity plate antenna C6 are in parallel, one end of the 6th coupling line inductance L 6 is connected with one end of the 6th capacity plate antenna C6, the other end of the other end of the 6th coupling line inductance L 6 and the 6th capacity plate antenna C6 is ground connection respectively, and above-mentioned two devices form sixth resonator.
Coupling line inductance in described the first resonator, the second resonator, the 3rd resonator, the 4th resonator, the 5th resonator, sixth resonator and capacity plate antenna all with top-level metallic ground G1 and the parallel placement of underlying metal ground G2; Between coupling line inductance, be not all connected mutually, between capacity plate antenna, be not all connected mutually yet.
The first coupling line inductance L 1 and the 6th coupling line inductance L 6 are identical structures, the second coupling line inductance L 2 and the 5th coupling line inductance L 5 are identical structures, the 3rd coupling line inductance L 3 and the 4th coupling line inductance L 4 are identical structures, the first capacity plate antenna C1 and the 6th capacity plate antenna C6 are identical structures, the second capacity plate antenna C2 and the 5th capacity plate antenna C5 are identical structures, and the 3rd capacity plate antenna C3 Yu Siping City plate capacitor C 4 is identical structures.
Top-level metallic ground G1, underlying metal ground G2, the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6 are the device that multilayer LTCC technique is fired.
Compared with prior art, its remarkable advantage is in the present invention: structure of the present invention has been used multilayer dielectric substrate, takes full advantage of 3-dimensional multi-layered space, thereby it is volume required significantly to have reduced element, be suitable for automation surface and mount production, and excellent performance.
Below in conjunction with accompanying drawing, describe the present invention.
Accompanying drawing explanation
Fig. 1 is a kind of three-dimensional structure front view with the multilayer structure making of filtering performance of the present invention.
Fig. 2 is a kind of three-dimensional structure end view with the multilayer structure making of filtering performance of the present invention.
Fig. 3 is a kind of three-dimensional structure vertical view with the multilayer structure making of filtering performance of the present invention.
Fig. 4 is a kind of S parameters simulation curve with the multilayer structure making of filtering performance of the present invention.
Fig. 5 is a kind of equivalent circuit diagram with the multilayer structure making of filtering performance of the present invention.
embodiment:
In conjunction with Fig. 1, Fig. 2, Fig. 3, the present invention is a kind of multilayer structure making with filtering performance, has adopted sandwich construction realization, has the function of bandpass filtering.
The present invention is a kind of multilayer structure making with filtering performance, and this multilayer structure making integral body is a ceramic body, and a plurality of dielectric layers are laminated in this ceramic body.Specifically comprise top-level metallic ground G1, underlying metal ground G2, the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6;
Wherein top-level metallic ground G1, underlying metal ground G2 are single flat sheetmetal structure; the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 are double-deck rectangular coil loop construction, and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6 are double-level-metal plate structure;
The first coupling line inductance L 1 and the first capacity plate antenna C1 are in parallel, one end of the first coupling line inductance L 1 is connected with one end of the first capacity plate antenna C1, the other end of the other end of the first coupling line inductance L 1 and the first capacity plate antenna C1 is ground connection respectively, and above-mentioned two devices form the first resonator;
The second coupling line inductance L 2 and the second capacity plate antenna C2 are in parallel, one end of the second coupling line inductance L 2 is connected with one end of the second capacity plate antenna C2, the other end of the other end of the second coupling line inductance L 2 and the second capacity plate antenna C2 is ground connection respectively, and above-mentioned two devices form the second resonator;
The 3rd coupling line inductance L 3 and the 3rd capacity plate antenna C3 are in parallel, one end of the 3rd coupling line inductance L 3 is connected with one end of the 3rd capacity plate antenna C3, the other end of the other end of the 3rd coupling line inductance L 3 and the 3rd capacity plate antenna C3 is ground connection respectively, and above-mentioned two devices form the 3rd resonator;
The 4th coupling line inductance L 4 Yu Siping City plate capacitor C 4 are in parallel, one end of Yu Siping City, one end plate capacitor C 4 of the 4th coupling line inductance L 4 is connected, the other end of other end He Siping City plate capacitor C 4 of the 4th coupling line inductance L 4 is ground connection respectively, and above-mentioned two devices form the 4th resonator;
The 5th coupling line inductance L 5 and the 5th capacity plate antenna C5 are in parallel, and one end of the 5th coupling line inductance L 5 is connected with one end of the 5th capacity plate antenna C5, and the other end of the other end of the 5th coupling line inductance L 5 and the 5th capacity plate antenna C5 is ground connection respectively.Above-mentioned two devices form the 5th resonator;
The 6th coupling line inductance L 6 and the 6th capacity plate antenna C6 are in parallel, and one end of the 6th coupling line inductance L 6 is connected with one end of the 6th capacity plate antenna C6, and the other end of the other end of the 6th coupling line inductance L 6 and the 6th capacity plate antenna C6 is ground connection respectively.Above-mentioned two devices form sixth resonator;
Coupling line inductance in the first resonator, the second resonator, the 3rd resonator, the 4th resonator, the 5th resonator, sixth resonator and capacity plate antenna all with top-level metallic ground G1 and the parallel placement of underlying metal ground G2, on same dielectric layer, be provided with a plurality of coupling line inductance and a plurality of capacity plate antenna, and described a plurality of coupling line inductance is not all connected mutually, a plurality of capacity plate antennas are not all connected mutually yet.
The first coupling line inductance L 1 is identical with the 6th coupling line inductance L 6, the second coupling line inductance L 2 is identical with the 5th coupling line inductance L 5, the 3rd coupling line inductance L 3 is identical with the 4th coupling line inductance L 4, the first capacity plate antenna C1 is identical with the 6th capacity plate antenna C6, the second capacity plate antenna C2 is identical with the 5th capacity plate antenna C5, and the 3rd capacity plate antenna C3 Yu Siping City plate capacitor C 4 is identical.
Top-level metallic ground G1, underlying metal ground G2, the first coupling line inductance L 1, the second coupling line inductance L 2, the 3rd coupling line inductance L 3, the 4th coupling line inductance L 4, the 5th coupling line inductance L 5, the 6th coupling line inductance L 6 and the first capacity plate antenna C1, the second capacity plate antenna C2, the 3rd capacity plate antenna C3, Siping City's plate capacitor C 4, the 5th capacity plate antenna C5, the 6th capacity plate antenna C6 are the device that multilayer LTCC technique is fired.
The present invention has adopted sandwich construction to realize filtering performance, wherein sandwich construction adopts LTCC technique to realize, this technology is compared with other multi-layer substrate, be easier to realize multilayer wiring and encapsulation integral structure, further reduce volume and weight, improve reliability, so this technology can significantly reduce device volume realizing under the prerequisite of identical index, improve device integrated level.
The present invention have filtering performance multilayer structure making overall structure schematic diagram as shown in Figure 1, the volume of whole device is 6.5mm*3.2mm*1.5mm, the relative dielectric constant of the LTCC cover ceramic dielectric adopting is 65, dielectric loss angle tangent is 0.002, the metallic conductor of realizing sandwich construction adopts silver, and wherein the thickness of every layer of ceramic dielectric substrate is 0.01mm, in order to improve rate of finished products, distance is between layers 0.04mm, and the cylindrical hole height connecting is between layers also 0.04mm.
The present invention have filtering performance multilayer structure making simulation curve as shown in Figure 4: the centre frequency of this multilayer structure making is 144MHz, and pass band width is 24MHz.Insertion loss in passband is less than 4dB, owing to respectively having produced a transmission zero at upper and lower sideband, make upper and lower sideband very precipitous, when DC<f<75 MHz, Out-of-band rejection is better than 60 dB, during 260 MHz<f<1.0 GHz, Out-of-band rejection is better than 60 dB, and visible Out-of-band rejection degree is high.
To sum up, the multilayer structure making with filtering performance provided by the invention has that volume is little, lightweight, selecting frequency characteristic is good, integrated level advantages of higher, be convenient to other microwave device integrated, in addition, this multilayer structure making, based on LTCC technique, has the low advantage of batch production cost, makes applied product have better serviceability, have the market competitiveness, its application prospect is boundless.