CN108011605A - One kind miniaturization is high to suppress LTCC bandpass filters - Google Patents
One kind miniaturization is high to suppress LTCC bandpass filters Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011159 matrix material Substances 0.000 claims abstract description 27
- 230000001629 suppression Effects 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000010923 batch production Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 7
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 208000002599 Smear Layer Diseases 0.000 description 1
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
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Abstract
The invention belongs to wave filter technology field, discloses a kind of high suppression LTCC bandpass filters of miniaturization, including matrix, interior electrode and termination electrode, described matrix include top layer substrate, secondary top layer substrate, second bottom substrate and the underlying substrate stacked gradually；The interior electrode includes the first capacitance and the 4th capacitance being embedded in top layer substrate；The first inductance and the 4th inductance being embedded in the secondary top layer substrate；The second inductance and the 3rd inductance being embedded in the second bottom substrate；And it is embedded in the second capacitance and the 3rd capacitance in the underlying substrate；First capacitance, the first inductance, the second inductance and the second capacitance are symmetrical arranged with the 4th capacitance, the 4th inductance, the 3rd inductance and the 3rd capacitance respectively；The termination electrode includes input terminal electrode, output terminal electrode and ground connection termination electrode；The present invention has small, achievable automatic batch production, cost is low, band internal loss is small, Out-of-band rejection degree height and high reliability.
Description
Technical field
The invention belongs to wave filter technology field, more particularly to a kind of high suppression LTCC bandpass filters of miniaturization.
Background technology
Bandpass filter is an important passive device in microwave circuit, its major function is to filter out high-frequency letter
Number and low-frequency signals, extract center section frequency signal.
It is the chip of electronic component, small as electronic system is continued to develop to miniaturization, lightweight and highly reliable direction
Type chemical conversion is current mainstream development direction.The Miniaturization Research of bandpass filter is unfolded in recent decades, numerous scholars one after another.
So far, centre frequency is in 30MHZ~1GHZ frequency ranges, and has the high bandpass filter suppressed at the same time, existing
It is patent " three-dimensionally integrated microminiature bandpass filter (publication number that level is highest in technology：CN 104966868A) ", its body
Product is 4mm × 3.4mm × 1.5mm, dielectric loss angle tangent 0.002.
But the structure design of the interior electrode of the three-dimensionally integrated microminiature bandpass filter is not optimal design, it every
Capacitance and inductance in a resonant element are the same level height being juxtaposed in matrix, although relative to packaging
Bandpass filter, its volume have reduced, but the size is small not enough, and the size is not the mainstream standard ruler of LTCC wave filters
It is very little, if being produced in batches in LTCC processing lines, frock will be faced and do not matched, can not realize automated production problem.
Therefore, traditional bandpass filter it is big there are volume and when being produced in batches asking of not matching of meet casual labourer dress
Topic.
The content of the invention
It is an object of the invention to provide one kind to minimize high suppression LTCC bandpass filters, solves traditional bandpass filtering
Volume existing for device is big and meet casual labourer fills the problem of not matching when being produced in batches.
One kind miniaturization is high to suppress LTCC bandpass filters, including matrix, interior electrode and termination electrode, described matrix include according to
The top layer substrate of secondary stacking, secondary top layer substrate, second bottom substrate and underlying substrate；The interior electrode include the first resonant element,
Second resonant element, the 3rd resonant element and the 4th resonant element；First resonant element includes being embedded in the top layer base
The first capacitance in plate and the first inductance being embedded in the secondary top layer substrate；Second resonant element includes being embedded in institute
State the second inductance in second bottom substrate and the second capacitance being embedded in the underlying substrate；3rd resonant element includes
The 3rd inductance being embedded in the second bottom substrate and the 3rd capacitance being embedded in the underlying substrate, the 3rd resonance
Unit is symmetrical arranged with second resonant element；4th resonant element includes the 4th be embedded in the top layer substrate
Capacitance and the 4th inductance being embedded in the secondary top layer substrate, the 4th resonant element and first resonant element are symmetrical
Set；The termination electrode includes input terminal electrode, output terminal electrode and ground connection termination electrode；First resonant element one terminates institute
State input terminal electrode, another termination ground connection termination electrode；First inductance and second inductance form the first coupling electricity
Sense；One end of second resonant element and one end of the 3rd resonant element are humorous by the 5th capacitive coupling, described second
Shake the other end of unit and another termination ground connection termination electrode of the 3rd resonant element；3rd inductance and described
Four inductance form the second coupling inductance；The one of 4th resonant element terminates the output terminal electrode, is connect described in another termination
Ground termination electrode.
The present invention makes miniaturization height using LTCC (low-temperature co-fired ceramics) technique and suppresses bandpass filter, its centre frequency
In 30MHZ~1GHZ frequency ranges, by being designed to the structure of bandpass filter, make its (3.2mm × 1.6mm in small size
× 0.9mm~3.2mm × 1.6mm × 1.2mm) realize quaternary structure bandpass filter, filter more equal than prior art minimum dimension
Ripple body product reduces 70%, can save Material Cost, increases quantum of output.Simultaneously as the bandpass filter that the present invention designs
Size be LTCC wave filter mainstream standard sizes, therefore, automatic batch production can be realized in LTCC processing lines, is carried significantly
High efficiency, reduces cost.And the wave filter has band internal loss small, Out-of-band rejection degree height, high reliability, meets
The minimizing, is highly reliable of downstream electronic complete machine, high performance requirement.
Brief description of the drawings
Fig. 1, which is that the present invention is a kind of, minimizes the high circuit diagram for suppressing LTCC bandpass filters.
Fig. 2, which is that the present invention is a kind of, minimizes the high perspective view for suppressing LTCC bandpass filters.
Fig. 3 is the high perspective for suppressing LTCC bandpass filters of miniaturization that one embodiment of the invention centre frequency is 175MHZ
Structure diagram.
Fig. 4 is that the high cross section structure for suppressing LTCC bandpass filters of miniaturization that centre frequency shown in Fig. 3 is 175MHZ shows
It is intended to.
Fig. 5 be the high insertion loss for suppressing LTCC bandpass filters of miniaturization that centre frequency shown in Fig. 3 is 175MHZ and
Return loss plot.
Fig. 6 is the saturating of the high suppression LTCC bandpass filters of miniaturization that another embodiment of the present invention centre frequency is 450MHZ
Depending on structure diagram.
Fig. 7 is that the high cross section structure for suppressing LTCC bandpass filters of miniaturization that centre frequency shown in Fig. 6 is 450MHZ shows
It is intended to.
Fig. 8 be the high insertion loss for suppressing LTCC bandpass filters of miniaturization that centre frequency shown in Fig. 6 is 450MHZ and
Return loss plot.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Please refer to Fig.1 to Fig. 8, a kind of miniaturization is high in presently preferred embodiments of the present invention suppresses LTCC bandpass filters, bag
Matrix, interior electrode and termination electrode are included, matrix includes top layer substrate 1, secondary top layer substrate 2, second bottom substrate 3 and the bottom stacked gradually
Laminar substrate 4.
In order to preferably explain the present invention, first LTCC Technology is explained below：So-called low temperature co-fired pottery
Porcelain technology, is exactly made the accurate and fine and close green band of thickness, as circuit base material, in green by low-temperature sintered ceramics powder
Take and make required circuitous pattern using techniques such as laser boring, micropore slip casting, accurate conductor paste printings, and will be multiple
Passive element is embedded to wherein, is then overlapped together, and is sintered at 900 DEG C, and the passive integration component of three-dimensional circuit network is made,
The three-dimensional circuit substrate of built-in passive element is can be made into, IC and active device can be mounted on its surface, passive/active collection is made
Into function module.
In embodiments of the present invention, top layer substrate 1 is laminated by multilayer single layer substrate, secondary top layer substrate 2, second bottom base
Plate 3 and underlying substrate 4 are similar, and the present invention uses LTCC (Low Temperature Co-fired Ceramic, low temperature co-fired pottery
Porcelain) technique realization, matrix is low-temperature co-fired ceramic medium, and passive device is embedded into substrate, and then high temperature sintering makes multilayer base
Plate forms matrix, and relative dielectric constant is 20~40, dielectric loss tan α≤0.001.
As shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6, it is humorous that interior electrode includes the first resonant element 10, the second resonant element the 20, the 3rd
Shake 30 and the 4th resonant element 40 of unit；First resonant element 10 includes being embedded in the first capacitance C1 in top layer substrate 1 and interior
The first inductance L1 in secondary top layer substrate 2；Second resonant element 20 includes the second inductance being embedded in second bottom substrate 3
L2 and the second capacitance C2 being embedded in underlying substrate 4；3rd resonant element 30 includes the 3rd be embedded in second bottom substrate 3
Inductance L3 and the 3rd capacitance C3 being embedded in underlying substrate 4, the 3rd resonant element 30 are symmetrical arranged with the second resonant element 20；
The 4th electricity that 4th resonant element 40 includes the 4th capacitance C4 being embedded in top layer substrate 1 and is embedded in time top layer substrate 2
Feel L4, the 4th resonant element 40 is symmetrical arranged with the first resonant element 10.Interior electrode conductor is silver.
As illustrated in fig. 1 and 2, termination electrode includes input terminal electrode 11 (PIN), output terminal electrode 12 (POUT) and ground terminal electricity
Pole 13 (GND)；First resonant element 10 1 terminates input terminal electrode 11, other end connection input terminal electrode 13；First inductance L1
The first coupling inductance is formed with the second inductance L2；One end of second resonant element 20 and one end of the 3rd resonant element 30 pass through
Five capacitance C5 are coupled, the other end of the second resonant element 20 and the other end connection input terminal electrode 13 of the 3rd resonant element 30；
3rd inductance and the 4th inductance form the second coupling inductance；One termination input terminal electrode of the 4th resonant element 40
12, other end connection input terminal electrode 13.
In embodiments of the present invention, can be adjusted by adjusting the capacitance of the first capacitance C1 and the 4th capacitance C4 outside band
The position of two zero points.Specifically, first is changed by adjusting spacing between the pole plate of the first capacitance C1 and the 4th capacitance C4
The capacitance of capacitance C1 and the 4th capacitance C4, so as to adjust the position with outer two zero points.
The present invention makes miniaturization height using LTCC (low-temperature co-fired ceramics) technique and suppresses bandpass filter, has one solely
Stone structure, its centre frequency by being designed to the structure of bandpass filter, make it in corpusculum in 30MHz~1GHz frequency ranges
(3.2mm × 1.6mm × 0.9mm~3.2mm × 1.6mm × 1.2mm) realizes quaternary structure bandpass filter in product, than existing skill
The equal wave filter volume of art minimum dimension reduces 70%, can save Material Cost, increases quantum of output.It is simultaneously as of the invention
The size of the bandpass filter of design is LTCC wave filter mainstream standard sizes, therefore, can be realized in LTCC processing lines automatic
Change batch production, greatly improve production efficiency, reduce cost., can and the wave filter has, Out-of-band rejection degree height small with internal loss
By property it is high the advantages that, can be widely applied to the fields such as microwave communication, radar navigation, satellite communication, automotive electronics, electronic countermeasure,
Meet the minimizing, is highly reliable of downstream electronic complete machine, high-performance, patch installation requirement.
Further, the capacitance of the first capacitance C1 and the 4th capacitance C4 is identical, the appearance of the second capacitance C2 and the 3rd capacitance C3
It is worth identical；The length of first inductance L1 and the 4th inductance L4 is identical, and the length of the second inductance L2 and the 3rd inductance L3 are identical.
In embodiments of the present invention, the first capacitance C1 and the 4th capacitance C4 mirror symmetries；Second capacitance C2 and the 3rd capacitance
C3 mirror symmetries.Specifically, the polar plate area of the first capacitance C1 and the 4th capacitance C4 is identical, pole spacing between plates is identical, capacitance phase
Together；The polar plate area of second capacitance C2 and the 3rd capacitance C3 is identical, pole spacing between plates is identical, capacitance is identical.First resonant element
10 and 20 face of the second resonant element, the second resonant element 20 be located at the underface of the first resonant element 10, the first capacitance C1
In the surface of the first inductance L1, the second inductance L2 is located at the underface of the first inductance L1, and the second capacitance C2 is located at the second inductance
The underface of L2；The area of first capacitance C1 and the second capacitance C2 may be the same or different, the electricity of the first inductance L1 and second
The length of sense L2 may be the same or different, and be set according to actual needs.3rd resonant element 30 and the 4th resonant element
40 faces, the 3rd resonant element 30 are located at the underface of the 4th resonant element 40, and the 4th capacitance C4 is being located at the 4th inductance L4 just
Top, the 3rd inductance L3 are located at the underface of the 4th inductance L4, and the 3rd capacitance C3 is located at the underface of the 3rd inductance L3；4th electricity
The area for holding C4 and the 3rd capacitance C3 may be the same or different, and the length of the 3rd inductance L3 and the 4th inductance L4 can phases
Together, can not also be same, set according to actual needs.It is worth noting that, in embodiments of the present invention, for the first resonance list
The description of position relationship between first 10, second resonant element 20, the 3rd resonant element 30 and the 4th resonant element 40 be in order to
Picture in Figure of description is corresponded to, for the first resonant element 10, the second resonant element 20,30 and of the 3rd resonant element
The description of position relationship between 4th resonant element 40 is the description of relative position relation, rather than absolute positional relation is retouched
State, therefore, the first resonant element 10 and the 4th resonant element 40 are embedded in top layer substrate 1 and time top layer substrate 2, the second resonance list
20 and the 3rd resonant element 30 of member is embedded in second bottom substrate 3 and underlying substrate 4, it is understood that is the second resonant element 20
Top layer substrate 1 and time top layer substrate 2 are embedded in the 3rd resonant element 30, in the first resonant element 10 and the 4th resonant element 40
Embedded in second bottom substrate 3 and underlying substrate 4.
Further, the first capacitance C1, the second capacitance C2, the 3rd capacitance C3 and the 4th capacitance C4 are multi-layer planar capacitance.
In embodiments of the present invention, the first capacitance C1, the second capacitance C2, the 3rd capacitance C3 and the 4th capacitance C4 put down for multilayer
Plate capacitance.Preferably, the first capacitance C1, the second capacitance C2, the 3rd capacitance C3 and the 4th capacitance C4 are three layer flat plate capacitance, capacitance
Middle plate ground connection, using three layer flat plate capacitance can realize in the case where meeting capability value size reduce product body
Product, in the case that capacity area is identical, the capability value of the capacitance of three-decker is about the capability value of the capacitance of double-layer structure
Twice.
Further, the first inductance L1, the second inductance L2, the 3rd inductance L3 and the 4th inductance L4 are spiral inductance.
In embodiments of the present invention, the first inductance L1, the second inductance L2, the 3rd inductance L3 and the 4th inductance L4 are spiral electricity
Sense, the bandpass filter of different center frequency are corresponding with the number of plies and the number of turns of different spiral inductances, and the number of plies of spiral inductance is not
Together, you can be interpreted as the length of spiral inductance difference, i.e. the bandpass filter of different center frequency is corresponding with different spiral
The length and the number of turns of inductance.In embodiments of the present invention, the length of the first inductance L1 and the 4th inductance L4 is identical with the number of turns, and second
The length of inductance L2 and the 3rd inductance L3 are identical with the number of turns.The centre frequency of bandpass filter of the present invention be by the first capacitance C1,
Second capacitance C2, the 3rd capacitance C3, the 4th capacitance C4, the first inductance L1, the second inductance L2, the 3rd inductance L3 and the 4th inductance L4
Together decide on.
Further, same feeling vertical vias connects between inductance and capacitance, and specifically, the first inductance and the first capacitance pass through
Vertical vias is attached；Second inductance and the second capacitance are connected by vertical vias；3rd inductance and the 3rd capacitance are by hanging down
Straight via is attached；4th inductance and the 4th capacitance are attached by vertical vias.Further, the hole depth of vertical vias
Not less than 0.9mm.
In the present invention is implemented, the hole depth of vertical vias can impact overall performance, be set according to actual needs.
Further, input terminal electrode 11 and input terminal electrode 12 are respectively arranged on the opposite end on length thereof direction,
Input terminal electrode 13 is arranged on the outside of the middle part on length thereof direction；Input terminal electrode 11, input terminal electrode 12 and input terminal electricity
Pole 13 includes three layers of coating, and coating is followed successively by silvering, nickel coating and tin coating from inside to outside.
In embodiments of the present invention, which includes 11,12 and of input terminal electrode of an input terminal electrode
Two input terminal electrodes 13, the left side that input terminal electrode 11 is arranged on matrix are connected with the first resonant element 10, input terminal electrode 12
It is connected arranged on the right side of matrix with the 4th resonant element 40, two input terminal electrodes 13 are respectively arranged on the front and back of matrix.
Input terminal electrode 11, input terminal electrode 12 and input terminal electrode 13 include three layers of coating, and coating is followed successively by silver-colored plating from inside to outside
Layer, nickel coating and tin coating, silvering are smear layer, and nickel coating and tin coating are electrodeposited coating.
Below in conjunction with Fig. 2~5, to the high suppression LTCC bands of miniaturization that one embodiment of the invention centre frequency is 175MHZ
Bandpass filter is described in more detail：
In embodiments of the present invention, the size of wave filter is 3.2mm × 1.6mm × 1.2mm, the dielectric of ceramic matrix material
Constant is 35 ± 1, and material medium fissipation factor is tan α≤0.001.
Interior electrode is made of four parallel resonance units, including first be made of the first inductance L1 and the first capacitance C1 is humorous
Shake unit 10, the second resonant element 20 being made of the second inductance L2 and the second capacitance C2, by the 3rd inductance L3 and the 3rd capacitance
3rd resonant element 30 of C3 compositions, the 4th resonant element 40 being made of the 4th inductance L4 and the 4th capacitance C4.Wherein, first
10 and second resonant element 20 of resonant element is attached by the Space Coupling of the first inductance L1 and the second inductance L2.Second is humorous
20 and the 3rd resonant element 30 of unit that shakes is attached by the 5th capacitance C5.
The inductance of resonant element is made of spiral inductance.The capacitance of each resonant element build in the surface of inductance or
Underface, inductance and capacitance are attached by vertical vias.Spiral inductance is six layers, and the number of turns is four circles half, is situated between every layer
Matter layer thickness is 35~40 μm.Spiral inductance interlamellar spacing is bigger, and ghost effect is smaller, can reduce pass-band loss.Capacitance is by three layers
Tablet forms, and ground connection tablet is in centre.Inductance and capacitance are attached by vertical vias, and vertical vias height 0.14mm~
0.16mm, vertical vias have three effects, first, connection inductance and capacitance, second, capacitance and inductance are kept apart, avoid producing
Ghost effect, third, the distance of increase inductance and ground plane, inductance virtual value and Q values are improved so as to increase.
Four resonant element location arrangements are as follows, the first resonant element 10 and 40 mirror symmetry of the 4th resonant element, i.e., and
One capacitance C1 and the 4th capacitance C4 mirror symmetries, the first inductance L1 and the 4th inductance L4 mirror symmetries, 20 He of the second resonant element
3rd resonant element, 30 mirror symmetry, i.e. the second capacitance C2 and the 3rd capacitance C3 mirror symmetries, the second inductance L2 and the 3rd inductance
L3 mirror symmetries.First resonant element 10 and the 4th resonant element 40 are above matrix, the second resonant element 20 and the 3rd resonance
Unit 30 is below matrix, 20 face of the first resonant element 10 and the second resonant element, the 3rd resonant element 30 and the 4th resonance
40 face of unit.First capacitance C1 and the 4th capacitance C4 is arranged in matrix the top, the second capacitance C2 and the 3rd capacitance C3 arrangements
In matrix bottom, the first inductance L1, the second inductance L2, the 3rd inductance L3 and the 4th inductance L4 are arranged in centre, the first inductance
L1 and the 4th inductance L4 is in the lower section of the first capacitance C1 and the 4th capacitance C4, and the second inductance L2 and the 3rd inductance L3 are in the second capacitance
The top of C2 and the 3rd capacitance C3, in the lower section of the first inductance L1 and the 4th inductance L4.First inductance L1 and the second inductance L2 are just
It is right, the 3rd inductance L3 and the 4th inductance L4 faces.This arrangement can make product structure compacter, so as to be substantially reduced product
Size.Between first inductance L1 and the 4th inductance L4, make band outer by inductive coupling between the second inductance L2 and the 3rd inductance L3
Zero point is produced, so as to improve Out-of-band rejection degree, dead-center position can be adjusted by adjusting the spacing between them.
The insertion loss of bandpass filter and return loss plot in the embodiment of the present invention are as shown in figure 5, the bandpass filtering
The centre frequency of device is 175MHz, passband width 40MHz, leads to in-band insertion loss≤2.5dB, Out-of-band rejection >=40dB.
The embodiment of the present invention makes the high suppression bandpass filter of miniaturization using LTCC (low-temperature co-fired ceramics) technique, wherein
Frequency of heart by being designed to the structure of bandpass filter, makes its (3.2mm × 1.6mm in small size in 175MHz frequency ranges
× 1.2mm) realize quaternary structure bandpass filter, Material Cost can be saved, realizes automatic batch production, reduces cost.And
The wave filter has, Out-of-band rejection degree height small with internal loss, high reliability.
Below in conjunction with Fig. 6~8, to the high suppression LTCC bands of miniaturization that one embodiment of the invention centre frequency is 450MHz
Bandpass filter is described in more detail：
In embodiments of the present invention, filter size is 3.2mm × 1.6mm × 1.1mm, and the dielectric of ceramic matrix material is normal
Number is 35 ± 1, and material medium fissipation factor is tan α≤0.001；
Interior electrode is made of four parallel resonance units, including first be made of the first inductance L1 and the first capacitance C1 is humorous
Shake unit 10, the second resonant element 20 being made of the second inductance L2 and the second capacitance C2, by the 3rd inductance L3 and the 3rd capacitance
3rd resonant element 30 of C3 compositions, the 4th resonant element 40 being made of the 4th inductance L4 and the 4th capacitance C4.Wherein, first
10 and second resonant element 20 of resonant element is attached by the Space Coupling of the first inductance L1 and the second inductance L2.Second is humorous
20 and the 3rd resonant element 30 of unit that shakes is attached by the 5th capacitance C5.
The inductance of resonant element is made of spiral inductance, and capacitance is made of multi-layer planar capacitance.The electricity of each resonant element
Appearance is built to be attached in the surface of inductance or underface, inductance and capacitance by vertical vias.Spiral inductance is two layers,
The number of turns is a circle half, and thickness of dielectric layers is 25~30 μm between every layer.Capacitance is made of three layer flat plate, and ground connection tablet is in centre.
Inductance and capacitance are attached by vertical vias, vertical vias height 0.16mm~0.18mm.
Four resonant element location arrangements are as follows, the first resonant element 10 and 40 mirror symmetry of the 4th resonant element, i.e., and
One capacitance C1 and the 4th capacitance C4 mirror symmetries, the first inductance L1 and the 4th inductance L4 mirror symmetries, 20 He of the second resonant element
3rd resonant element, 30 mirror symmetry, i.e. the second capacitance C2 and the 3rd capacitance C3 mirror symmetries, the second inductance L2 and the 3rd inductance
L3 mirror symmetries.First resonant element 10 and the 4th resonant element 40 are above matrix, the second resonant element 20 and the 3rd resonance
Unit 30 is below matrix, 20 face of the first resonant element 10 and the second resonant element, the 3rd resonant element 30 and the 4th resonance
40 face of unit.First capacitance C1 and the 4th capacitance C4 is arranged in matrix the top, the second capacitance C2 and the 3rd capacitance C3 arrangements
In matrix bottom, the first inductance L1, the second inductance L2, the 3rd inductance L3 and the 4th inductance L4 are arranged in centre, the first inductance
L1 and the 4th inductance L4 is in the lower section of the first capacitance C1 and the 4th capacitance C4, and the second inductance L2 and the 3rd inductance L3 are in the second capacitance
The top of C2 and the 3rd capacitance C3, in the lower section of the first inductance L1 and the 4th inductance L4.First inductance L1 and the second inductance L2 are just
It is right, the 3rd inductance L3 and the 4th inductance L4 faces.
The insertion loss of bandpass filter and return loss plot in the embodiment of the present invention are as shown in figure 8, the bandpass filtering
The centre frequency of device is 450MHz, passband width 80MHz, leads to in-band insertion loss≤2.5dB, Out-of-band rejection >=50dB.
The embodiment of the present invention makes the high suppression bandpass filter of miniaturization using LTCC (low-temperature co-fired ceramics) technique, wherein
Frequency of heart by being designed to the structure of bandpass filter, makes its (3.2mm × 1.6mm in small size in 450MHz frequency ranges
× 1.1mm) realize quaternary structure bandpass filter, Material Cost can be saved, realizes automatic batch production, reduces cost.And
The wave filter has, Out-of-band rejection degree height small with internal loss, high reliability.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. one kind miniaturization is high to suppress LTCC bandpass filters, it is characterised in that described including matrix, interior electrode and termination electrode
Matrix includes top layer substrate, secondary top layer substrate, second bottom substrate and the underlying substrate stacked gradually；
The interior electrode includes the first resonant element, the second resonant element, the 3rd resonant element and the 4th resonant element；
First resonant element includes the first capacitance being embedded in the top layer substrate and is embedded in the secondary top layer substrate
In the first inductance；
Second resonant element includes the second inductance being embedded in the second bottom substrate and is embedded in the underlying substrate
In the second capacitance；
3rd resonant element includes the 3rd inductance being embedded in the second bottom substrate and is embedded in the underlying substrate
In the 3rd capacitance, the 3rd resonant element is symmetrical arranged with second resonant element；
4th resonant element includes the 4th capacitance being embedded in the top layer substrate and is embedded in the secondary top layer substrate
In the 4th inductance, the 4th resonant element is symmetrical arranged with first resonant element；
The termination electrode includes input terminal electrode, output terminal electrode and ground connection termination electrode；
First resonant element one terminates the input terminal electrode, another termination ground connection termination electrode；
First inductance and second inductance form the first coupling inductance；
One end of second resonant element and one end of the 3rd resonant element are humorous by the 5th capacitive coupling, described second
Shake the other end of unit and another termination ground connection termination electrode of the 3rd resonant element；
3rd inductance and the 4th inductance form the second coupling inductance；
The one termination output terminal electrode of the 4th resonant element, another termination ground connection termination electrode.
2. miniaturization as claimed in claim 1 is high to suppress LTCC bandpass filters, it is characterised in that first capacitance and institute
State that the capacitance of the 4th capacitance is identical, second capacitance is identical with the capacitance of the 3rd capacitance.
3. miniaturization as claimed in claim 1 or 2 is high to suppress LTCC bandpass filters, it is characterised in that first capacitance,
Second capacitance, the 3rd capacitance and the 4th capacitance are multi-layer planar capacitance.
4. miniaturization as claimed in claim 1 is high to suppress LTCC bandpass filters, it is characterised in that first inductance, institute
It is spiral inductance to state the second inductance, the 3rd inductance and the 4th inductance.
5. the high suppression LTCC bandpass filters of miniaturization as described in claim 1 or 4, it is characterised in that first inductance
Identical with the length of the 4th inductance, second inductance is identical with the length of the 3rd inductance.
6. the high suppression LTCC bandpass filters of miniaturization as described in claim 1,2 or 4, it is characterised in that first electricity
Sense and first capacitance are attached by vertical vias；Second inductance and second capacitance are connected by vertical vias
Connect；3rd inductance and the 3rd capacitance are attached by vertical vias；4th inductance and the 4th capacitance
It is attached by vertical vias.
7. miniaturization as claimed in claim 6 is high to suppress LTCC bandpass filters, it is characterised in that the hole of the vertical vias
It is deep to be not less than 0.9mm.
8. miniaturization as claimed in claim 1 is high to suppress LTCC bandpass filters, it is characterised in that the input terminal electrode and
The output terminal electrode is respectively arranged on the opposite end on described matrix length direction, and the ground connection termination electrode is arranged on described matrix
On the outside of middle part on length direction.
9. miniaturization as claimed in claim 1 is high to suppress LTCC bandpass filters, it is characterised in that the bandpass filter is adopted
Realize that described matrix is low-temperature co-fired ceramic medium with low-temperature co-fired ceramics technique.
10. miniaturization as claimed in claim 1 is high to suppress LTCC bandpass filters, it is characterised in that the input terminal electrode,
The output terminal electrode and the ground connection termination electrode include three layers of coating, and the coating is followed successively by silvering, nickel from inside to outside
Coating and tin coating.
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| CN201711274292.8A CN108011605A (en) | 2017-12-06 | 2017-12-06 | One kind miniaturization is high to suppress LTCC bandpass filters |
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| CN201711274292.8A CN108011605A (en) | 2017-12-06 | 2017-12-06 | One kind miniaturization is high to suppress LTCC bandpass filters |
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| CN113098423A (en) * | 2021-04-16 | 2021-07-09 | 苏州汉天下电子有限公司 | LC filter |
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Application publication date: 20180508 |