CN101931380A - 包括桥部的声学谐振器结构 - Google Patents

包括桥部的声学谐振器结构 Download PDF

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CN101931380A
CN101931380A CN2010102154063A CN201010215406A CN101931380A CN 101931380 A CN101931380 A CN 101931380A CN 2010102154063 A CN2010102154063 A CN 2010102154063A CN 201010215406 A CN201010215406 A CN 201010215406A CN 101931380 A CN101931380 A CN 101931380A
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acoustic resonator
piezoelectric layer
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CN101931380B (zh
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约翰·克伊
克里斯·冯
菲尔·尼克尔
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Avago Technologies International Sales Pte Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps

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  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明提供了包括桥部的声学谐振器结构。该声学谐振器包括第一电极、第二电极和设置在所述第一电极与所述第二电极之间的压电层。该声学谐振器还包括设置在所述第一电极、所述第二电极和所述压电层下方的反射性元件。所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域。该声学谐振器也包括与所述声学谐振器的所述活性区域的末端相邻的桥部。

Description

包括桥部的声学谐振器结构
技术领域
本发明涉及包括桥部的声学谐振器结构。
背景技术
电谐振器使用在许多电子应用中。例如，在许多无线通信器件中，将射频(RF)和微波频率谐振器用作滤波器，来改善信号的接收和发送。滤波器通常包括电感器和电容器，并且近来包括谐振器。
如将会被认识到的，期望减小电子装置的组件的尺寸。许多公知的滤波器技术对于整体系统的小型化造成了障碍。由于减小组件尺寸的需要，已经出现了基于压电效应的一类谐振器。在基于压电效应的谐振器中，在压电材料中产生声学谐振模式。这些声波被转换为用于电子应用的电波。
一种类型的压电谐振器是薄膜体声波谐振器(FBAR)。FBAR具有小尺寸的优点，并且适于集成电路(IC)制造工具和技术。FBAR包括声学堆，该声学堆具有设置在两个电极之间的压电材料层以及其他部件。声波通过声学堆实现谐振，波的谐振频率由声学堆内的材料确定。
FBAR与诸如石英的体声学谐振器的原理非常类似，但是尺寸减小以在GHz频率处进行谐振。因为FBAR具有微米数量级的厚度以及毫米数量级的长度和宽度，所以FBAR相对于公知的谐振器有利地提供了相对紧凑的替代品。
理想地，体声学谐振器仅激发厚度方向(TE)模，这些模是具有沿着传播方向的传播矢量(k)的纵向机械波。TE模理想地沿着压电层的厚度方向(例如，z方向)传播。
不幸的是，除了期望的TE模之外，还存在产生在声学堆中的横向模(公知为瑞利-拉姆(Rayleigh-Lamb)模)。瑞利-拉姆模是具有与TE模(期望工作模式)的方向垂直的k向量的机械波。这些横向模沿着压电材料的面积维度(本示例的x、y方向)传播。除了其他不利效果外，横向模还不利地影响FBAR器件的质量因子(Q)。特别地，瑞利-拉姆模的能量在FBAR器件的界面处损失。如将会被认识到的，这种损失到伪模式(spurious mode)的能量损失损失了所需的纵模的能量，并且最终导致Q因子的降低。
FBAR包括活性区域，并且与所述活性区域相连的连接部可能增加损失，并且由此使得Q因子降低。例如，在活性区域与连接部之间的过渡区域中，在制作过程中可能在压电层中形成缺陷。这些缺陷可能导致声学损失，并且导致Q因子减小。
因此，所需要的是至少克服上述缺点的声学谐振结构电滤波器。
发明内容
根据本发明的代表实施例，声学谐振器包括第一电极、第二电极和设置在所述第一电极与所述第二电极之间的压电层。该声学谐振器还包括设置在所述第一电极、所述第二电极和所述压电层下方的反射性元件。所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域。该声学谐振器也包括与所述声学谐振器的所述活性区域的末端相邻的桥部。
根据本发明的另一个代表实施例，薄膜体声学谐振器(FBAR)包括第一电极、第二电极和设置在所述第一电极与所述第二电极之间的压电层。该FBAR还包括设置在所述第一电极、所述第二电极和所述压电层下方的、包括腔或布拉格反射器的反射性元件。所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成声学谐振器的活性区域。该FBAR也包括与所述声学谐振器的所述活性区域的末端相邻的桥部。
根据本发明的另一个代表实施例，电滤波器包括声学谐振器。该声学谐振器包括第一电极、第二电极和设置在所述第一电极与所述第二电极之间的压电层。该声学谐振器还包括设置在所述第一电极、所述第二电极和所述压电层下方的反射性元件。所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域。该声学谐振器也包括与所述声学谐振器的所述活性区域的末端相邻的桥部。
附图说明
在与附图一同阅读时，可以从以下的详细描述中最好地理解说明性的实施例。强调一下，各种特征没有必要按照比例绘制。实际上，为了讨论的清楚，可以任意地增加或减小尺寸。在可适用并且可实现的情况下，相似的附图标记表示相似的元件。
图1示出了根据典型实施例的声学谐振器的截面图。
图2示出了根据典型实施例的声学谐振器的俯视图。
图3示出了根据典型实施例的Q因子与空气桥部和FBAR的下电极之间的间隔的关系图。
图4示出了根据典型实施例的有效耦合系数(kt2)与空气桥部和声学谐振器的下电极之间的间隔的关系图。
图5示出了根据典型实施例的FBAR的截面图。
图6示出了包括典型实施例的特定FBAR的FBAR的并联阻抗(Rp)的图。
图7示出了包括典型实施例的特定FBAR的FBAR的有效耦合系数(kt2)的图。
具体实施方式
术语定义
注意，这里使用的术语仅是为了描述特定实施例，并且不是为了进行限制。所定义的术语是对在本教导的技术领域中一般理解并接受的限定术语的技术和科学含义的补充。
如在说明书和权利要求书中使用的，除非上下文中清楚地表明其他情况之外，未指明数目的对象包括单数和复数的对象。例如，因此“装置”包括一个装置以及多个装置。
如在说明书和权利要求书中使用的，除了一般的含义之外，术语“基本”和“基本上”表示具有可接受的限度或程度。例如，“基本上抵消”意味着本领域技术人员可以认为该抵消是可以接受的。
如在说明书和权利要求书中使用的，除了其一般的意义之外，术语“大致”意味着在本领域技术人员可以接受的限度或量之内。例如，“大致相同”意味着本领域技术人员将会认为这些项目比较来说相同。
详细描述
在特定描述中，为了解释的目的而不是限制的目的而给出了特定的细节，以提供根据本教导的图示实施例的透彻理解。然而，对于已经受益于本公开的本领域技术人员来说，离开这里公开的特定细节仍然在权利要求的范围内。此外，可以省略对于公知的设备和方法的描述，使其不使得示例性实施例的描述变得模糊。这种方法和设备明显在本教导的范围内。
图1是根据说明性实施例的声学谐振器100的截面图。示意性地，结构100是FBAR结构。声学谐振器100包括衬底101。设有第一电极102和压电层103，该压电层103具有与第一电极102相接触的第一表面以及与第二电极104相接触的第二表面。电极102、104包括导电材料并且沿着y方向提供振荡电场，其中y方向是层101的厚度方向。在图示的示例性实施例中，y轴是谐振器的(一个或多个)TE(纵向)模的轴线。
压电层103和电极102、104悬挂在通过对衬底101进行选择性蚀刻而形成的腔105上方。腔可以由许多公知方法来形成，例如共同转让的授予Ruby等人的美国专利6,384,697中描述的方法。电极102、104、压电层103以及腔105的重叠区域被称作声学谐振器100的活性区域。因此，谐振器100是可以经由压电层103电耦合的机械谐振器。可以想到通过FBAR来促进机械谐振的其他的悬挂方案。例如，谐振器100可以定位在形成在衬底101中或其上的失配的声学布拉格反射器(未示出)上方。这种类型的FBAR有时也称作实心安装型谐振器(SMR)，并且例如可以如授权给Lakin的美国专利No.6,107,712所述，通过引用将其公开的内容特别全部结合在这里。
对比之下，声学谐振器的非活性区域包括电极102、电极104或这二者与没有设置在腔105上方的压电层103的重叠区域，或其他悬挂结构。如下文中更完全地描述的，在可行的程度内减小声学谐振器100的非活性区域的面积有利于谐振器的性能。
在以所选择的形貌进行连接时，多个声学谐振器100可以作为电滤波器。例如，声学谐振器100可以设置为梯形滤波器布置，诸如授权给Ella的美国专利5,910,756和授权给Bradley等人的美国专利6,262,637等。电滤波器可以用在许多应用(诸如，双工器)中。
可以根据公知的半导体制作方法并使用公知的材料来制造声学谐振器100。例如，可以根据授权给Ruby等人的美国专利5,587,620；5,873,153；6,384,697；6,507,983和7,272,292以及授权给Bradley等人的美国专利6,828,713的教导来制造结构100。通过引用将这些专利的公开详细地结合在这里。强调一下，这些专利中描述的方法和材料是代表性的，并且可以预料到本领域技术人员的视野内的其他制作方法和材料。
声学谐振器100也包括设置在声学谐振器的边上的桥部106，该桥部106连接到接触部107。接触部107连接到信号线(未示出)以及为了声学谐振器100的特定应用而选择的电子组件(未示出)。声学谐振器100的这个部分通常被称作声学谐振器100的互连侧。相比之下，第二电极104在腔105上方的位置108处终止，以使得声学谐振器的非活性面积如下所述地最小化。位置108与声学谐振器100的互连侧相反。
桥部106包括形成在部分第二电极104下方的间隙109。示意性地并且如下所述，在移除在形成间隙109的过程中设置的牺牲层(未示出)之后，间隙109包括空气。然而，间隙109可以由包括低声学阻抗材料的其他材料构成，诸如也被称作黑钻石的掺杂碳(C)的SiO2；或者商业上公知为SiLK的电介质树脂；或者苯并环丁烯(BCB)。可以通过公知的方法将这种低声学阻抗材料设置在间隙109中。低声学阻抗材料可以在移除用于形成间隙的牺牲层之后设置(如下所述)，或者可以被用于代替间隙109中的牺牲层材料并且不被移除。
在代表性实施例中，通过将牺牲材料(未示出)设置在互连侧上的第一电极102和压电层的一部分上方并且在牺牲层上方形成第二电极104，来形成桥106。示意性地，牺牲材料包括磷硅酸盐玻璃(PSG)，其示意性地包括8％的磷和92％的二氧化硅。诸如压电层103和第二电极104的随后的层顺序地沉积在PSG上，直到形成最终结构。特别地，可以在沉积压电层103之前将种子层(未示出)设置在第一电极102上，并且可以将钝化层(未示出)沉积在第二电极104上。在形成包括桥部106的结构之后，通过示意性地使用氢氟酸来蚀刻掉PSG牺牲层，而留下独立的桥部106。在代表性的实施例中，在同一处理步骤中移除设置腔105中的牺牲层以及桥106下方的牺牲层，使得后者留下由空气构成的间隙109。
压电层103包括在将压电层103形成在第一电极102和衬底101上方的过程中形成的过渡部110。在过渡部110处的压电层103通常包括材料缺陷和空隙(void)，特别地包括诸如晶格缺陷和空隙的结构缺陷。这些缺陷和空隙可以导致在压电材料中传播的机械波的声学能量的损失。应当认识到，声学能量的损失导致谐振结构100的Q因子减小。然而，如下所述，通过在间隙109的、出现过渡部110的位置处的区域111中将第二电极104与压电层103分开，声学谐振器100的该部分活性区域中必定不包括缺陷和空隙。因此，减小了由于在过渡部110处的压电层103中的缺陷和空隙而引起的声学损失，并且相比于公知的谐振器(诸如公知的FBAR)改善了Q因子。
此外并且有利地，桥部106在声学谐振器100的互连侧上的活性区域的边界处提供声学阻抗失配。这种声学阻抗失配导致在边界处的声波反射，否则该声波将会传播到活性区域之外并且损失掉而导致能量损失。通过防止这种损失，桥部106导致Q因子增加。此外，在位置108处的第二电极104的终止部使得谐振器100的活性区域终止，并且通过产生声学阻抗失配来减小损失。这也提供了Q因子的改善。
除了在过渡部110之前终止声学谐振器100的活性区域之外，桥部106也减小声学谐振器100的非活性区域的面积。FBAR 100的非活性区域产生在等效电路中与FBAR的活性区域的固有电容并联的寄生电容。该寄生电容降低有效耦合系数(kt2)，并且因此有利于减小寄生电容。减小非活性区域的面积减小了寄生电容并且由此改善了有效耦合系数(kt2)。
图1也示出了由距离‘d’分离的第一线112和第二线113。距离‘d’表示在第一线112处的第一电极102的边缘(对于该讨论将其任意地选择为x＝0)到在第二线113处的桥部106的起点之间的距离。随着第二线113的位置变得更大(更负)，Q因子增加。有效耦合系数(kt2)也随着线112和113的分离而增加一定程度。因此，特定距离‘d’的选择由于减小了声学损失而导致Q的改善并且通过减小寄生电容而改善了kt2，其中由于减小了非活性FBAR面积而减小了声学损失。
图2示出了图1的声学谐振器的俯视图。特别地，图1中示出的声学谐振器100的截面图是沿着线1-1取的。本实施例的第二电极104是切趾的(apodized)，以减小声学损失。此外，可以在以下文献中找到在声学谐振器中使用切趾的其他细节：授权给Larson III等人的共有美国专利6,215,375；或者2006年5月31日递交的、Richard C Ruby的题为“Piezoelectric Resonator Structure and Electrical Filters”的美国专利申请公开20070279153。通过引用将这些专利和专利申请公报的公开全部特别结合在这里。
声学谐振器100的基本模式是纵向伸展模式或“活塞”模式。通过以谐振器100的谐振频率向两个电极施加时变电压来激发该模式。压电材料将电能形式的能量转换为机械能形式的能量。在具有无穷薄电极的理想FBAR中，所施加的频率等于压电介质的声速除以压电介质厚度的两倍：f＝vac/(2*T)，其中T是压电介质的厚度并且Vac为声学相速度。对于具有有限厚度电极的谐振器来说，通过经加权的声速和电极厚度来调整该公式。
对于在谐振频率处阻抗等于系统阻抗的FBAR谐振器来说，对于一个电极连接到接地并且另一个电极连接到信号的情况，可以通过将随着频率变化的、经反射的能量与施加的能量的比率画在史密斯图上而获得谐振器的Q的定量和定性理解。随着所施加的能量的频率增加，FBAR谐振器的大小/相位在史密斯图上扫描出圆形。这被称作是Q圆。其中Q圆首先穿过实轴(水平轴)，这对应于串联谐振频率fs。实阻抗(以欧姆来计)为Rs。随着Q圆围绕史密斯图的周长延伸，其再次穿过实轴。Q圆穿过实轴的第二个点被标记为fp——FBAR的并联或反谐振频率。在fp处的实阻抗为Rp。
通常期望在使得Rp尽可能大的同时，使得Rs尽可能小。定性地，Q圆越近地“靠近(hug)”史密斯图的外缘，器件的Q因子就越高。理想的无损谐振器的Q环的半径为1并且将会处于史密斯图的边缘。然而，如上所述，存在影响器件的Q的能量损失。例如，并且除了上述声学损失的来源之外，瑞利-拉姆(横向或伪)模式在压电层101的x、y维度中。这些横向模是由于沿着z方向传播的纵向模的界面模转换而产生的；并且是由于TE模和各种横向模的非零传播向量kx和ky(例如，S0模和第零级和第一级弯曲模，A0和A1)而产生的，其中非零传播向量kx和ky是由于设置电极的区域与没有电极的谐振器周围区域之间的有效速率差而产生的。
横向模寄生在许多谐振器应用中，无论其来源于哪里。例如，寄生横向模在谐振器的界面处耦合并且移除可以用于纵模的能量，并且由此减小谐振器器件的Q因子。特别地，由于寄生横向模和其他声学损失，可以在S11参数的斯密斯图的Q环上观察到Q的急剧减小。这些Q因子的急剧减小被公知为在本申请中示出并描述的“振动(rattle)”或者“环减小(loop-de-loop)”。
如在所结合的‘375专利和专利公报中更全面地描述的，经过切趾的第一和第二电极102、104在谐振器的界面处以相消关系引起横向模的反射，因此减小了横向模的大小，否则横向模会导致更多粘滞能量损耗。有益地，因为这些横向模不耦合到谐振器之外并发展到更高的数量，所以可以通过将经反射的横向模的一部分经过模转换而转换为纵向模，而减轻能量损失。最终，这导致Q因子的整体改善。
图3示出了根据代表性实施例的声学谐振器100的Q因子关于桥部106与第一电极103之间的间隔(图1中的‘d’)的关系的图。当间隔‘d’被选择为零时，线113与线112对准，并且消除了区域111。在将间隔‘d’选择为正时，线113现在具有正的x坐标(即，图1中线113位于线112的右侧)。在这两种情况下，由于过渡部110中的缺陷而引起的声学损失与谐振器100的非活性区域的面积的相对增加相结合，而产生相对低的Q因子。对比来说，在将间隔‘d’选择为负时(即，图1中线113位于线112的左侧)，非活性面积减小，而桥部106和区域111包括相对增加的尺寸。如图3的区域302所示，Q因子在303处增加到最大值。应当理解，谐振器100的互连侧上的声学谐振器的非活性区域越减小，就越形成区域111。如上所述，这使得由于缺陷而引起的损失减小，以及在声学谐振器100的互连侧处的声学谐振器100的活性区域的边界处的声学阻抗失配。
图4示出了根据代表性实施例的声学谐振器100的有效耦合系数(kt2)关于空气桥部与下电极之间的间隔(图1中的‘d’)的关系的图。在将间隔选择为零时，线113与线112对准，并且消除了区域111。在将间隔‘d’选择为正时，线113现在具有正的x坐标(即，图1中线113位于的线112的右侧)。在这两种情况下，非活性区域的面积导致寄生电容的增加。如图4的区域401所示，增加的寄生电容提供相对减小的有效耦合系数(kt2)。对比来说，在将间隔d选择为‘负’时(即，图1中线113位于的线112的左侧)，非活性面积减小，而桥部106和区域111尺寸增加。如图4的区域402所示，这导致了寄生电容的减小以及有效耦合系数(kt2)相对的增加。有效耦合系数(kt2)在403处到达最大值。在图4的区域404中，有效耦合系数(kt2)开始降低。这很可能是由于以下事实：区域111进一步增加到区域105中，导致由桥部106和间隙109所形成的寄生电容的面积增加，因此增加与声学谐振器100的固有电容相并联的寄生电容。此外，随着区域111在区域105内增加，活性谐振器区域也减小，导致kt2降低。因此，在区域404中，有效耦合系数(kt2)随着区域111的增加而减小。通过图3和图4的讨论可以认识到，图1中的间距‘d’的选择允许选择Q因子和有效耦合系数(kt2)二者的可接受的增加。
图5是根据示意性实施例的声学谐振器500的截面图。声学谐振器500(其示意性地为FBAR)与前述声学谐振器100共享许多公共特征。为了避免使得现在描述的实施例变得模糊，不重复许多这些公共细节。
声学谐振器包括选择性的凹陷部(通常被称作‘innie’)和框架元件502(也被称作‘outie’)。凹陷部501和框架元件502在第二电极104的周边提供声学失配，改善信号反射并且减小声学损失。最终，减小的损失转换为器件的改善的Q值。虽然凹陷部501和框架元件502示出为在第二电极104上，但是这些特征可以改为设置在第一电极102上，或者选择性地既在第一电极102上也在第二电极104上。其他的使用细节、凹陷部501和框架元件502的形成和优点例如可以在以下文件中找到：授权给Feng等人的题为“Thin Film Bulk Acoustic Resonator with a Mass LoadedPerimeter”的共同所有的美国专利7,280,007；以及授权给Jamneala等人的题为“Piezoelectric Resonator Structure and Electronic Filters having FrameElement”的共同拥有的美国专利申请公报20070205850。将这些专利和专利申请的内容通过引用特别结合在这里。
图6示出了包括代表性实施例的某些声学谐振器的FBAR的并联谐振时阻抗Rp的曲线图。特别地，公知谐振器的Rp在601处示出；具有桥部106的声学谐振器(例如，图1的声学谐振器100)的Rp在602处示出；具有凹陷部和框架元件(不具有桥部)的声学谐振器的Rp在603处示出；具有桥部106以及凹陷部501和框架元件502的声学谐振器的Rp在604处示出(例如，图5的声学谐振器500)。
公知的谐振器通常具有约2000欧姆的Rp(在图601处示出)。如602所示，将凹陷部和框架元件增加到公知的FBAR中将Rp增加了约1kΩ。类似地，如603所示，增加桥部106而不增加凹陷部501和框架元件502将Rp增加了约1kΩ。然而，如604所示，在将桥部106以及凹陷部和框架元件502这些特征相结合地增加时，整体并联谐振Rp改善了约3kΩ(比公知谐振器)。因此，通过比较图6中的601和604可以证明，桥部106以及凹陷部501和框架元件502提供了并联谐振Rp的互相促进的增加。在FBAR中具有相对高的Rp以提供相对低的插入损耗以及包括这种FBAR的相对‘快’的滚降滤波器(roll off filter)是有利的。
如所公知的，虽然使用诸如凹陷部501的凹陷部导致有效耦合系数(kt2)相对小的增加，但是可能存在由于框架元件和凹陷部而引起的有效耦合系数(kt2)的劣化。在一些应用中，即使Q因子的改善可能不那么大，减轻这种劣化也是有用的。例如，已知FBAR的带宽与kt2相关。因此，kt2的劣化可以减小FBAR滤波器的带宽。现在描述的某些代表性实施例提供了可接受的Q因子和可接受的kt2劣化的某种折衷。
图7示出了包括代表性实施例的某些声学谐振器的FBAR的有效耦合系数(kt2)的图。在701示出了公知的谐振器的有效耦合系数(kt2)；在702处示出了包括桥部的声学谐振器(例如，图1的声学谐振器100)的有效耦合系数(kt2)；在703处示出了包括凹陷部和框架元件(但是不具有桥部)的公知声学谐振器的有效耦合系数(kt2)；在704处示出了包括桥部106以及凹陷部501和框架元件502(例如，图5的声学谐振器500)的公知声学谐振器的有效耦合系数(kt2)。
公知的谐振器的有效耦合系数(kt2)如701所示约为5.3。如702所示，增加桥部106将有效耦合系数(kt2)改善到5.4。然而，如703所示，增加凹陷部和框架元件而不增加空气桥部将会产生约5.15的有效耦合系数(kt2)。最终，桥部106以及凹陷部501和框架元件502的结合产生基本与公知的FBAR相同的有效耦合系数(kt2)(在704示出)。因此，必须使桥部106对于有效耦合系数(kt2)的积极影响与凹陷部和框架元件对于有效耦合系数(kt2)的负面影响形成对比。
根据示意性实施例，将用于各种应用(诸如应用到电滤波器)的声学谐振器描述为具有桥部。本领域技术人员认识到可能有各种结合到本教导中的变化并且仍然在权利要求的范围内。在参看说明书、附图以及权利要求书之后，这些和其他变化对于本领域技术人员将会变得清楚。因此，除了限制在权利要求的精神和范围内之外，本发明不受到限制。

Claims (20)

1.一种声学谐振器，包括：
第一电极；
第二电极；
设置在所述第一电极与所述第二电极之间的压电层；
反射性元件，其设置在所述第一电极、所述第二电极和所述压电层下方，其中，所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域；以及
桥部，其与所述声学谐振器的所述活性区域的末端相邻。
2.根据权利要求1所述的声学谐振器，还包括与所述第二电极的多个边中的一个边电连接的连接部，其中，所述桥部设置在所述连接部与所述第二电极的所述一个边之间。
3.根据权利要求1所述的声学谐振器，其中，在与所述声学谐振器的所述活性区域的末端相邻的位置处，所述压电层包括具有缺陷的过渡部。
4.根据权利要求3所述的声学谐振器，其中，所述第二电极不与所述过渡部相接触。
5.根据权利要求1所述的声学谐振器，其中，所述桥部包括间隙。
6.根据权利要求5所述的声学谐振器，其中，所述间隙包括所述第二电极与所述压电层之间的区域。
7.根据权利要求6所述的声学谐振器，其中，在与所述声学谐振器的所述活性区域的末端相邻的位置处，所述压电层包括具有缺陷的过渡部，并且所述过渡部设置在所述间隙的区域下方。
8.根据权利要求1所述的声学谐振器，其中，所述第二电极包括具有边的上表面，并且凹陷部沿着所述边设置。
9.根据权利要求1所述的声学谐振器，其中，所述第二电极包括具有边的上表面，并且框架元件沿着所述边设置。
10.一种薄膜体声学谐振器(FBAR)，包括：
第一电极；
第二电极；
设置在所述第一电极与所述第二电极之间的压电层；
包括腔或布拉格反射器的反射性元件，其设置在所述第一电极、所述第二电极和所述压电层下方，其中，所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域；以及
桥部，其与所述声学谐振器的所述活性区域的末端相邻。
11.根据权利要求10所述的FBAR，还包括与所述第二电极的多个边中的一个边电连接的连接部，其中，所述桥部设置在所述连接部与所述第二电极的所述一个边之间。
12.根据权利要求10所述的FBAR，其中，在与所述声学谐振器的所述活性区域的末端相邻的位置处，所述压电层包括具有缺陷的过渡部。
13.根据权利要求12所述的FBAR，其中，所述第二电极不与所述过渡部相接触。
14.根据权利要求10所述的FBAR，其中，所述桥部包括间隙。
15.根据权利要求14所述的FBAR，其中，所述间隙包括所述第二电极与所述压电层之间的区域。
16.根据权利要求15所述的FBAR，其中，在与所述声学谐振器的所述活性区域的末端相邻的位置处，所述压电层包括具有缺陷的过渡部，并且所述过渡部设置在所述间隙的区域下方。
17.根据权利要求10所述的FBAR，其中，所述第二电极包括具有边的上表面，并且凹陷部沿着所述边设置。
18.根据权利要求10所述的FBAR，其中，所述第二电极包括具有边的上表面，并且框架元件沿着所述边设置。
19.根据权利要求10所述的FBAR，还包括所述桥部下方的低声学阻抗材料。
20.一种包括声学谐振器的滤波器元件，所述声学谐振器包括：第一电极；第二电极；设置在所述第一电极与所述第二电极之间的压电层；设置在所述第一电极、所述第二电极和所述压电层下方的反射性元件，其中，所述反射性元件、所述第一电极、所述第二电极和所述压电层的重叠部分构成所述声学谐振器的活性区域；与所述声学谐振器的所述活性区域的末端相邻的桥部。
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