US6107721A - Piezoelectric resonators on a differentially offset reflector - Google Patents

Piezoelectric resonators on a differentially offset reflector Download PDF

Info

Publication number
US6107721A
US6107721A US09/361,645 US36164599A US6107721A US 6107721 A US6107721 A US 6107721A US 36164599 A US36164599 A US 36164599A US 6107721 A US6107721 A US 6107721A
Authority
US
United States
Prior art keywords
layer
material
substrate
resonators
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/361,645
Inventor
Kenneth Meade Lakin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
TFR Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TFR Technologies Inc filed Critical TFR Technologies Inc
Priority to US09/361,645 priority Critical patent/US6107721A/en
Assigned to TFR TECHNOLOGIES, INC. reassignment TFR TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LAKIN, KENNETH MEADE
Application granted granted Critical
Publication of US6107721A publication Critical patent/US6107721A/en
Assigned to TRIQUINT SEMICONDUCTOR, INC. reassignment TRIQUINT SEMICONDUCTOR, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: TFR TECHNOLOGIES, INC.
Assigned to QORVO US, INC. reassignment QORVO US, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: TRIQUINT SEMICONDUCTOR, INC.
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56Monolithic crystal filters
    • H03H9/564Monolithic crystal filters implemented with thin-film techniques

Abstract

Piezoelectric resonators utilizing a differentially offset reflector. One or more piezoelectric resonators are supported upon a substrate by one or more intervening layers of material, which intervening layers of material act as a reflector. The reflector isolates the resonators from the substrate. A portion of one or more of the intervening layers of material includes a differential layer of material, which differential layer shifts the resonant frequencies of the resonators that overlie the differential layer as compared with the resonant frequencies of those resonators that do not overlie the differential layer of material.

Description

1. BACKGROUND OF THE INVENTION

a. Field of the Invention

This invention pertains to the fabrication of piezoelectric resonators which resonate at microwave frequencies. More particularly this invention pertains to the fabrication of multiple resonators on a single substrate, where the resonant frequency of one or more resonators is shifted by a small amount relative to the resonant frequency of one or more of the other resonators on the same substrate.

b. Description of the Prior Art

The fabrication of one or more piezoelectric resonators for use at microwave frequencies by the deposition of metal electrodes upon a piezoelectric substrate is well known in the art. FIGS. 1 and 2 depict a piezoelectric substrate 11 upon which conducting metal electrodes 12, 13, 14 and 15 have been deposited. The electrodes, together with the piezoelectric material that is sandwiched between the overlapping portions of the electrodes form piezoelectric, bulk-wave resonators 16 and 17. Although FIGS. 1 and 2 depict only two resonators, many resonators can be fabricated at one time upon a single wafer. Such devices and fabrication techniques are described in "High-Q Microwave Acoustic Resonators and Filters," by Lakin, Kline and McCarron, IEEE Trans. on Microwave Theory and Techniques, Vo. 41, No. 12, December 1993, p. 2139; Guttwein, Ballato and Lukaszek, U.S. Pat. No. 3,694,677; and "Acoustic Bulk Wave Composite Resonators", Applied Physics Letters 38(3) by Lakin and Wang, Feb. 1, 1981.

U.S. Pat. No. 5,894,647 describes prior art methods for fabricating two or more piezoelectric resonators on a substrate such that the resonant frequency of one resonator is shifted by a small amount from the resonant frequency of other resonators. The prior art methods include the fabrication of a slightly thicker electrode that forms part of a first resonator as compared to the thickness of a similar electrode forming part of a second resonator on the same substrate. The difference in the thicknesses of the electrodes shifts the resonant frequency of the first resonator relative to the resonant frequency of the second resonator.

In a first method of the prior art, the difference in the thicknesses of the two electrodes is obtained by depositing the metal for the two electrodes in two, separate steps, e.g. electrode 15 of FIGS. 1 and 2 is deposited in one step in the fabrication process and electrode 13 is deposited in a different step in the process. However, when the two electrodes, having different thicknesses, are fabricated in two separate steps, it is difficult to control the depositions such that the electrode thicknesses will differ by only a small, controlled amount.

In a second method, the metal for both electrodes 13 and 15 are deposited in a single operation and then a thin, differential layer of metal is added by depositing a second, differential layer of metal upon electrode 15. Because the differential layer is deposited separately, the difference in the thicknesses of the two electrodes can be carefully controlled. As described in U.S. Pat. No. 5,894,647 ("647"), slight misalignments of the mask that is used to spatially define the differential layer often produce an electrode having a narrow strip of metal along one or more edges that does not have the thickness of the original layer of metal plus the differential layer, but, instead, has the thickness of only the original layer of metal or has the thickness of the differential layer alone. These narrow strips of metal produce parasitic resonators that degrade the operation of the basic resonator. The "647" patent discloses a method for trimming the edges of the electrodes so as to remove variations in electrode thickness that cause such degradation.

In a different, but related area of the prior art, U.S., Pat. Nos. 3,414,832, 5,373,268 and 5,821,833 disclose resonators which are fabricated upon, and mechanically supported by, a substrate comprising a number of layers of different materials. See also "Solidly Mounted Resonators and Filters", 1995 IEEE Proc. Ultrasonics Symposium, pp. 905-908 and U.S. Pat. Nos. 5,821,833, 5,373,268 and 3,414,832. FIG. 3 depicts such a resonator of the prior art. Resonator 20, which is formed by piezoelectric layer 21 and electrodes 22 and 23, is mechanically supported on substrate 24 by means of a series of intervening layers 25 through 29 of material. As viewed normal to the surfaces of layers 25 thru 29, the area that is common to both electrodes 22 and 23, i.e. the are of overlap, defines the approximate active region of piezoelectric layer 21, which together with electrodes 22 and 23, acts as resonator 20.

Intervening layers 25, 26, 27, 28, and 29 have mechanical properties which alternate from one layer to the next and, at the microwave frequency of interest, each intervening layer has a thickness that is approximately equal to a quarter wave-length of a thickness-mode wave propagating through the layer or an odd integral multiple thereof. By selecting the mechanical properties and thickness of each layer, and the number of layers, one can control the mechanical impedance with respect to thickness-mode vibrations that the uppermost surface 30 of the intervening layers presents to resonator 20, e.g. a very low impedance that approximates suspension of resonator 20 in free space, or a very high impedance that approximates a clamped or rigid surface. For a clamped surface, i.e. when surface 30 provides a high mechanical impedance, resonator 20 exhibits a resonance when substrate 21 is approximately one-quarter wave in thickness, and for a free surface, i.e. when surface 30 provides a low mechanical impedance, resonator 20 exhibits a resonance when substrate 21 is approximately one-half wavelength in thickness.

Although five intervening layers 25 through 29 are depicted, larger and smaller numbers of layers have been used in the prior art. The intervening layers 25 thru 29 are collectively referred to herein as an acoustic reflector, or simply a reflector, and the surface of the reflector can be characterized as having a coefficient of reflection for impinging acoustic waves. As one example of the prior art, layer 21 is a 3 micrometer-thick layer of piezoelectric aluminum nitride, electrodes 22 and 23 are 3000 Angstrom thick layers of aluminum, substrate 24 is sapphire, and the intervening layers of materials 25 thru 29 are alternating layers of silicon dioxide and aluminum nitride having thicknesses of 0.7 and 1.8 micrometers respectively. The aluminum nitride in the intervening layers is normally fabricated so as not to be piezoelectric. Although FIG. 5 depicts five intervening layers, the prior art device referred to above uses nine alternating layers of silicon dioxide and aluminum nitride to obtain the desired coefficient of reflection at the surface of the reflector. The resonant frequency of the resonator(s) is approximately 1,600 MHz. U.S. Pat. No. 5,821,833 further describes the analysis and design of such reflectors.

2. SUMMARY OF THE INVENTION

The present invention fabricates a plurality of resonators upon a single substrate, which resonators are supported upon the substrate by one or more intervening layers of material. The resonant frequencies of one or more of the resonators is shifted relative to the resonant frequencies of other resonators by slightly altering the thickness of one of the intervening layers. The thickness need only be altered on that portion of the intervening layer that underlies those resonators whose resonant frequencies are to be shifted relative to the resonant frequencies of those resonators under which the thickness of the intervening layer has not been altered.

3. BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 depict a piezoelectric resonator of the prior art.

FIG. 3 depicts a piezoelectric resonator of the prior art that is supported upon a substrate by a number of intervening layers of material that act as a reflector.

FIG. 4 depicts a first embodiment of the invention, and

FIG. 5 depicts a second embodiment of the invention.

4. DETAILED DESCRIPTION

Referring now to FIG. 4, a layer 41 of piezoelectric material is supported on substrate 40 by one or more intervening layers 42 of material. Conducting metal electrodes 43 and 44, together with the portion of piezoelectric layer 41 that is sandwiched between these two electrodes comprise resonator 45. Similarly, electrodes 46 and 47, together with the portion of piezoelectric layer 41 that is sandwiched between them comprise resonator 48. Resonators 45 and 48 and piezoelectric layer 41 are supported upon substrate 40 by intervening layers 42. In a similar manner to that described above, the mechanical properties and thicknesses of the intervening layers are selected so as to obtain a reflector surface 49 that provides either a high or low mechanical impedance to acoustic waves propagating normally to these layers.

As depicted in FIG. 4, in the present invention an additional, thin, differential layer 50 of material is added to the uppermost intervening layer of material over those portions of the intervening layer that underlies the resonators whose resonant frequencies are to be shifted, e.g. underlying resonator 48. The addition of the differential layer of supporting material alters the mechanical impedance that the reflector surface 49 provides to resonator 48. As a consequence, the resonant frequency of resonator 48 is shifted by a small amount.

Typically, the bandwidth of the reflection coefficient substantially exceeds the bandwidth of the resonators that it supports. The phase of the reflection coefficient at the surface of the reflector depends upon the reflections of the acoustic waves from the underlying layers. This dependence, however, decreases with respect to lower layers that are further removed from the surface of the reflector. For methods of analysis and further descriptions of reflectors and resonators see Lakin, "Solidly Mounted Resonators and Filters", 1995 IEEE Proc. Ultrasonics Symposium, pp. 905-908 and Lakin et al. "Development of Miniature Filters for Wireless Applications", IEEE Trans. on Microwave Theory and Techniques, Vol. 43, No. 12, December 1996, pp. 2933-2939.

The differential thickness of the underlying layer of material that must be added to shift the resonant frequency of the overlying resonator is much greater than the thickness of metal that otherwise would have had to be added to a resonator electrode to obtain the same shift. The differential layer of supporting material need not necessarily be added to the uppermost layer of the reflector but as depicted in FIG. 5, the differential layer 51 could, instead, be added to an underlying layer, e.g. layer 52 so as to effect a change in the reflection coefficient exhibited by the reflector at surface 53. The configuration depicted in FIG. 5 is similar to that depicted in FIG. 4 except for the location of the differential layer. Because layer 52 is more distant from surface 53, the change in the reflection coefficient due to a given thickness of differential layer 51 is diminished. Thus, to obtain the same shift in the resonant frequency of the overlying resonator 54, a greater differential thicknesses must be added when the layer of material to which the differential thickness is added is further removed from the reflector surface. As a consequence, for a given shift in resonant frequency, the dimensional accuracy required for the thickness of the differential layer is less when the location of the differential layer is more remote from the surface of the reflector. Although the word "differential" is used, it should be understood that, particularly with differential layers that are separated by a number of intervening layers from the reflector surface, the thickness of the differential layer may be sustantial fraction of the thicknesses of the overlaying layers.

An important advantage of this invention is that the thickness of the differential layer of supporting material need not be controlled nearly as accurately as the thickness of a differential layer of metal that would have been added to the electrode to cause the same shift in resonant frequency for the resonator. For example, for a resonant frequency of 3,500 MHz, 50 angstroms of aluminum added to the electrode will cause about the same shift in resonant frequency as adding approximately 1400 angstroms of silicon dioxide to the third layer of material below the surface of the resonator.

The differential layers that are depicted in FIGS. 4 an 5 normally consist of a material that is the same as the layer of material upon which the differential layer is deposited or that has acoustic properties that are approximately the same as the properties of the layer of material upon which the differential material deposited. In practice, however, because of the suseptibility of some materials to various etchants used in the masking and deposition process, it is often simpler and easier to deposit the differential layer of material underneath the layer of similar material instead of on top of the layer of similar material. In either case, the presence of the differential layer of material shifts the resonant frequency of the overlying resonators.

Although FIGS. 4 and 5 each depict the addition of only a single layer of differential material, it should be understood that differential layers of material can be added to more than one of the underlying layers of material. Furthermore, over one area of wafer, a differential layer of material may be added to one layer of underlying material, and over a different area of the wafer, a differential layer of material may be added instead to a different layer of underlying material.

The present invention thus provides a means for fabricating a substantial number of resonators upon a single wafer wherein the resonant frequencies of one set of the resonators can be shifted relative to the remaining resonators on the wafer by adding a differential thickness to that portion of an underlying, intervening layer that underlies the set of resonators whose frequencies are to be shifted. Multiple sets of resonators, having differing resonant frequencies also can be fabricated upon one wafer by underlying the various sets with different, differential layers of intervening material having appropriate differential thicknesses. The invention can thus provide resonators having differing resonant frequencies, which resonators can be combined to provide desirable filtering characteristics.

The invention also provides a method for fabricating upon a single wafer, different sets of resonators, each set of resonators having a specific resonant frequency. The different sets can be fabricated in one operation and then be cut from the it wafer for use in particular different applications, thus reducing the cost of fabricating such resonators.

Claims (2)

I claim:
1. A piezoelectric resonator device supported upon a substrate, the resonator device having a shifted resonant frequency, comprising:
a substrate,
a piezoelectric resonator,
a reflector comprising at least one intervening layer of material, the reflector intervening between the resonator and the substrate and the reflector supporting the resonator upon the substrate, the intervening layer of material located immediately adjacent to the resonator being substantially non-conductive,
one intervening layer of material including a differential layer of material, whereby the differential layer of material shifts the resonant frequency of the piezoelectric resonator device.
2. A combination of piezoelectric resonators supported upon a substrate comprising:
a substrate,
a first piezoelectric resonator having a resonant frequency,
a second piezoelectric resonator having a resonant frequency,
a reflector comprising at least one intervening layer of material, the reflector intervening between the first piezoelectric resonator and the substrate, and the reflector intervening between the second piezoelectric resonator and the substrate, and the reflector supporting the first and second piezoelectric resonators upon the substrate, the intervening layer of material located immediately adjacent to the resonator being substantially non-conductive,
a portion of one intervening layer of material including a differential layer of material, said portion intervening between the first piezoelectric resonator and the substrate and said portion not intervening between the second piezoelectric resonator and the substrate, whereby the resonant frequency of the first piezoelectric resonator is shifted relative to the resonant frequency of the second piezoelectric resonator.
US09/361,645 1999-07-27 1999-07-27 Piezoelectric resonators on a differentially offset reflector Expired - Lifetime US6107721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/361,645 US6107721A (en) 1999-07-27 1999-07-27 Piezoelectric resonators on a differentially offset reflector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/361,645 US6107721A (en) 1999-07-27 1999-07-27 Piezoelectric resonators on a differentially offset reflector

Publications (1)

Publication Number Publication Date
US6107721A true US6107721A (en) 2000-08-22

Family

ID=23422904

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/361,645 Expired - Lifetime US6107721A (en) 1999-07-27 1999-07-27 Piezoelectric resonators on a differentially offset reflector

Country Status (1)

Country Link
US (1) US6107721A (en)

Cited By (187)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297515B1 (en) * 1998-09-11 2001-10-02 Texas Instruments Incorporated Integrated acoustic thin film resonator
US6407649B1 (en) * 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
US6437667B1 (en) * 2000-02-04 2002-08-20 Agere Systems Guardian Corp. Method of tuning thin film resonator filters by removing or adding piezoelectric material
US6441703B1 (en) * 2000-01-18 2002-08-27 Texas Instruments Incorporated Multiple frequency acoustic reflector array and monolithic cover for resonators and method
US6469597B2 (en) * 2001-03-05 2002-10-22 Agilent Technologies, Inc. Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
US6483229B2 (en) * 2001-03-05 2002-11-19 Agilent Technologies, Inc. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6518860B2 (en) * 2001-01-05 2003-02-11 Nokia Mobile Phones Ltd BAW filters having different center frequencies on a single substrate and a method for providing same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6617249B2 (en) * 2001-03-05 2003-09-09 Agilent Technologies, Inc. Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US20030218518A1 (en) * 2002-05-21 2003-11-27 Samsung Electro-Mechanics Co., Ltd. Film bulk acoustic resonator (FBAR) device and method for fabricating the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20040145430A1 (en) * 2003-01-15 2004-07-29 Epcos Ag Component operating with bulk acoustic waves and a method for producing the component
US20040150293A1 (en) * 2002-12-05 2004-08-05 Michael Unterberger Component operating with bulk acoustic waves, and having asymmetric/symmetrical circuitry
US20050093656A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Thin-film acoustically-coupled transformer
US20050093655A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Film acoustically-coupled transformer
US20050093653A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
US20050140466A1 (en) * 2003-10-30 2005-06-30 Larson John D.Iii Decoupled stacked bulk acoustic resonator-based band-pass filter
US20050200433A1 (en) * 2004-03-09 2005-09-15 Infineon Technologies Ag Bulk acoustic wave filter and method for eliminating unwanted side passbands
US20060185139A1 (en) * 2003-10-30 2006-08-24 Larson John D Iii Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements
US20070171002A1 (en) * 2006-01-23 2007-07-26 Unkrich Mark A Dual path acoustic data coupling system and method
US20070170815A1 (en) * 2006-01-23 2007-07-26 Unkrich Mark A Acoustic data coupling system and method
US20070279153A1 (en) * 2006-05-31 2007-12-06 Ruby Richard C Piezoelectric resonator structures and electrical filters
US20070290767A1 (en) * 2006-06-19 2007-12-20 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
US7332985B2 (en) 2003-10-30 2008-02-19 Avago Technologies Wireless Ip (Singapore) Pte Ltd. Cavity-less film bulk acoustic resonator (FBAR) devices
US20080055020A1 (en) * 2006-08-31 2008-03-06 Infineon Technologies Ag Acoustic Resonator
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US7391286B2 (en) 2005-10-06 2008-06-24 Avago Wireless Ip Pte Ltd Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
US7423503B2 (en) 2005-10-18 2008-09-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating film acoustically-coupled transformer
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7427819B2 (en) 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US7436269B2 (en) 2005-04-18 2008-10-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonators and method of making the same
US7443269B2 (en) 2005-07-27 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
US7463499B2 (en) 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US7508286B2 (en) 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
DE102008048454A1 (en) 2007-09-24 2009-04-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Hybridakustikresonator-based filters
DE102008048906A1 (en) 2007-09-28 2009-04-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. The single-stack coupled resonators with differential output
US7525398B2 (en) 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7561009B2 (en) 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
US20090179714A1 (en) * 2006-06-19 2009-07-16 Ali-Ahmad Walid Y Harmonic Termination Of Power Amplifiers Using BAW Filter Output Matching Circuits
US7612636B2 (en) 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
WO2010004534A1 (en) * 2008-07-11 2010-01-14 Nxp B.V. Bulk acoustic wave resonator using acoustic reflector layers as inductive or capacitive circuit element
DE102009038452A1 (en) 2008-08-29 2010-03-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Einzelkavitätsakustikresonatoren and electrical filter comprising Einzelkavitätsakustikresonatoren
US7675390B2 (en) 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US20100107389A1 (en) * 2002-01-11 2010-05-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating an electrode for a bulk acoustic resonator
US20100107400A1 (en) * 2006-05-17 2010-05-06 Avago Technologies Wireless Ip (Singapore) Pte.Ltd Method of manufacturing an acoustic mirror
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US20100212127A1 (en) * 2009-02-24 2010-08-26 Habbo Heinze Process for Adapting Resonance Frequency of a BAW Resonator
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7802349B2 (en) 2003-03-07 2010-09-28 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
DE102010030454A1 (en) 2009-06-24 2010-12-30 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Akustikresonatorstruktur having a bridge
US20100327995A1 (en) * 2009-06-30 2010-12-30 Commissariat a L'Energie Atomique at aux Energies Alternatives Guided Acoustic Wave Resonant Device and Method for Producing the Device
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
CN102056037A (en) * 2010-12-20 2011-05-11 张�浩 Acoustical coupling apparatus
DE102010043797A1 (en) 2009-11-25 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator of electric filter used in duplexer, has cantilevered portion that is provided in one side among several sides of electrode
US20110121689A1 (en) * 2009-11-23 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Polarity determining seed layer and method of fabricating piezoelectric materials with specific c-axis
US20110180391A1 (en) * 2010-01-22 2011-07-28 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US20110204995A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators
US20110204997A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
US20110204996A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer
US20110237204A1 (en) * 2010-03-29 2011-09-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structure comprising hybrid electrodes
US8143082B2 (en) 2004-12-15 2012-03-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
DE102012205033A1 (en) 2011-03-29 2012-10-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator structure i.e. double bulk acoustic resonator structure, for ladder filter of e.g. portable communication device, has top electrode placed over piezoelectric layer, and bridge placed between two electrodes
US8330325B1 (en) 2011-06-16 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer
DE102012210239A1 (en) 2011-06-16 2012-12-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. having Bulkakustikresonator having a non-piezoelectric layer and a bridge
DE102012214323A1 (en) 2011-08-12 2013-02-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator used in electrical filter, has electrodes that are respectively located over piezoelectric layer, and bridge that is positioned between electrodes
DE102012213892A1 (en) 2011-02-28 2013-02-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator structure for use in e.g. voltage transformer, has top electrode arranged over piezoelectric layer, and bridge formed in layer, where bridge is surrounded by piezoelectric material of layer
DE102012219838A1 (en) 2011-10-31 2013-05-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
US8436516B2 (en) 2010-04-29 2013-05-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
DE102012223303A1 (en) 2011-12-15 2013-06-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Vote of a MEMS oscillator
DE102012224460A1 (en) 2011-12-27 2013-06-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Solid-mount bulk acoustic wave resonator (SMR) used in wireless communication device, has active area of acoustic reflector that is formed by overlapping of acoustic reflector, electrodes and piezoelectric layer
US20130249648A1 (en) * 2012-03-20 2013-09-26 Commissariat A L'Energie Atomique Et Aux Energies Alternatives HBAR Resonator Comprising A Structure For Amplifying The Amplitude Of At Least One Resonance Of Said Resonator And Methods For Producing Such A Resonator
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8633781B2 (en) 2010-12-21 2014-01-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Combined balun and impedance matching circuit
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
DE102013221030A1 (en) 2012-10-18 2014-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US8797123B2 (en) 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US20140312994A1 (en) * 2011-11-11 2014-10-23 Teknologian tutkimuskeskut VTT Laterally coupled bulk acoustic wave filter with improved passband characteristics
US8872604B2 (en) 2011-05-05 2014-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor
US8896395B2 (en) 2011-09-14 2014-11-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having multiple lateral features
DE102014107592A1 (en) 2013-05-31 2014-12-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having a piezoelectric layer with varying amounts of dopant
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
DE102014109715A1 (en) 2013-07-10 2015-01-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface passivation of a substrate by mechanical damage of the surface layer
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US9065421B2 (en) 2012-01-31 2015-06-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9083311B2 (en) 2011-12-30 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Apparatus having double phase-matched configuration for reducing magnitude of intermodulation products
US9088265B2 (en) 2013-05-17 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer
US9093979B2 (en) 2012-06-05 2015-07-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally-coupled acoustic resonators
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
DE102014105952A1 (en) 2014-02-26 2015-08-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic wave resonators with doped piezoelectric material and frame members
DE102014105947A1 (en) 2014-02-27 2015-08-27 Avago Technologies General Ip (Singapore) Pte. Ltd. And magnetron sputtering process for producing a thin film using a magnetron sputtering
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9136819B2 (en) 2012-10-27 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
DE102014105949A1 (en) 2014-03-19 2015-09-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally coupled resonator filter with apodized shape
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
DE102014105951A1 (en) 2014-03-26 2015-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. the same acoustic resonator with a planarizing layer and a method for producing
DE102014105950A1 (en) 2014-03-28 2015-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device having a trench for providing a voltage discharge
US9154111B2 (en) 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
DE102015106724A1 (en) 2014-04-30 2015-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator with an air wing and a temperature compensating layer
DE102015107569A1 (en) 2014-05-15 2015-11-19 Avago Technologies General Ip Pte. Ltd. A process for producing rare earth-doped piezo-electric material with different amounts of dopant and a C-axis orientation selected
US9197185B2 (en) 2010-04-29 2015-11-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrodes with buried temperature compensating layers
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
DE102015108508A1 (en) 2014-05-30 2015-12-03 Avago Technologies General Ip (Singapore) Pte. Ltd. An acoustic resonator with a vertically extended acoustic cavity
DE102015108517A1 (en) 2014-05-29 2015-12-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitively coupled resonator means with air gap, the electrode and piezoelectric layer separates
DE102015108446A1 (en) 2014-05-28 2015-12-03 Avago Technologies General Ip Pte. Ltd. An acoustic resonator disposed with an underlying in a dielectric, the electrical connection
US9219517B2 (en) 2013-10-02 2015-12-22 Triquint Semiconductor, Inc. Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers
US9219464B2 (en) 2009-11-25 2015-12-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants
US9225313B2 (en) 2012-10-27 2015-12-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics
US9246473B2 (en) 2011-03-29 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector
DE102015114224A1 (en) 2014-08-28 2016-03-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic layer volume resonators with back vias
US9306511B2 (en) 2013-07-30 2016-04-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Power amplifier and distributed filter
DE102015117953A1 (en) 2014-10-22 2016-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. A bulk acoustic wave resonator, which includes a temperature compensation device comprising a layer of low acoustic impedance
US20160164489A1 (en) * 2014-12-08 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter
DE102015122834A1 (en) 2014-12-27 2016-06-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonators split-flow
US9385684B2 (en) 2012-10-23 2016-07-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having guard ring
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9438288B2 (en) 2012-12-07 2016-09-06 Avago Technologies General Ip (Singapore) Pte. Ltd. System providing reduced intermodulation distortion
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9450167B2 (en) 2013-03-28 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature compensated acoustic resonator device having an interlayer
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US9455681B2 (en) 2014-02-27 2016-09-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having doped piezoelectric layer
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9490770B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
DE102016109826A1 (en) 2015-05-29 2016-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having a plurality of acoustic reflectors
DE102016109829A1 (en) 2015-05-29 2016-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having a plurality of contacts on connection sides
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9525397B2 (en) 2011-03-29 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic reflector, frame and collar
US9548438B2 (en) 2014-03-31 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers
US9571063B2 (en) 2014-10-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with structures having different apodized shapes
US9571064B2 (en) 2011-02-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with at least one air-ring and frame
US9577603B2 (en) 2011-09-14 2017-02-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Solidly mounted acoustic resonator having multiple lateral features
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9608192B2 (en) 2013-03-28 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature compensated acoustic resonator device
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
US9691963B2 (en) 2014-05-29 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator and filter device with comb electrodes and support pillars separating piezoelectric layer
US9698754B2 (en) 2014-05-29 2017-07-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator and filter device with comb electrodes and support frame separation from piezoelectric layer
DE102017101602A1 (en) 2016-01-29 2017-08-03 Avago Technologies General Ip (Singapore) Pte. Ltd. A multiplexer wide bandwidth based on LC and acoustic resonator circuits for performing Carrier Aggregation
US9748918B2 (en) 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9762208B2 (en) 2015-09-30 2017-09-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Very wide bandwidth composite bandpass filter with steep roll-off
DE102017106582A1 (en) 2016-03-29 2017-10-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature-compensated acoustic resonator device with thinner Impfzwischenschicht
US9793877B2 (en) 2013-12-17 2017-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Encapsulated bulk acoustic wave (BAW) resonator device
DE102017108340A1 (en) 2016-04-21 2017-10-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator
WO2017191499A1 (en) 2016-05-06 2017-11-09 Waseda University Piezoelectric layer and piezoelectric device comprising the piezoelectric layer
US9835595B2 (en) 2013-05-23 2017-12-05 Qorvo Us, Inc. Sensors, methods of making and devices
US9853626B2 (en) 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
DE102017109102A1 (en) 2016-06-29 2018-01-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with at least one air ring and a frame
US9893713B2 (en) 2015-09-30 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
US9991871B2 (en) 2011-02-28 2018-06-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a ring
DE102018107674A1 (en) 2017-03-31 2018-10-04 Avago Technologies General Ip (Singapore) Pte. Ltd. An acoustic resonator with expanded cavity
US10164605B2 (en) 2016-01-26 2018-12-25 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator with piezoelectric layer comprising lithium niobate or lithium tantalate
US10263601B2 (en) 2016-10-31 2019-04-16 Avago Technologies International Sales Pte. Limited Tunable bulk acoustic resonator device with improved insertion loss
US10263587B2 (en) 2016-12-23 2019-04-16 Avago Technologies International Sales Pte. Limited Packaged resonator with polymeric air cavity package
US10284168B2 (en) 2016-10-27 2019-05-07 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator
US10284173B2 (en) 2011-02-28 2019-05-07 Avago Technologies International Sales Pte. Limited Acoustic resonator device with at least one air-ring and frame
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
US10367472B2 (en) 2016-02-29 2019-07-30 Avago Technologies International Sales Pte. Limited Acoustic resonator having integrated lateral feature and temperature compensation feature

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414832A (en) * 1964-12-04 1968-12-03 Westinghouse Electric Corp Acoustically resonant device
US3487318A (en) * 1967-11-08 1969-12-30 Motorola Inc Mode coupled discriminator
US4211947A (en) * 1977-02-09 1980-07-08 Kabushiki Kaisha Seikosha Thickness-shear mode quartz oscillator with an added non-circular mass
US5373268A (en) * 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
US5892318A (en) * 1997-01-02 1999-04-06 Motorola Inc. Piezoelectric transformer with multiple output
US5894647A (en) * 1997-06-30 1999-04-20 Tfr Technologies, Inc. Method for fabricating piezoelectric resonators and product
US5962955A (en) * 1996-03-19 1999-10-05 Fujitsu Limited Piezoelectric device and method for fabricating the same, and ink jet printer head and method for fabricating the same
US5969463A (en) * 1996-07-10 1999-10-19 Matsushita Electric Industrial Co., Ltd. Energy trapping piezoelectric device and producing method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414832A (en) * 1964-12-04 1968-12-03 Westinghouse Electric Corp Acoustically resonant device
US3487318A (en) * 1967-11-08 1969-12-30 Motorola Inc Mode coupled discriminator
US4211947A (en) * 1977-02-09 1980-07-08 Kabushiki Kaisha Seikosha Thickness-shear mode quartz oscillator with an added non-circular mass
US5373268A (en) * 1993-02-01 1994-12-13 Motorola, Inc. Thin film resonator having stacked acoustic reflecting impedance matching layers and method
US5962955A (en) * 1996-03-19 1999-10-05 Fujitsu Limited Piezoelectric device and method for fabricating the same, and ink jet printer head and method for fabricating the same
US5969463A (en) * 1996-07-10 1999-10-19 Matsushita Electric Industrial Co., Ltd. Energy trapping piezoelectric device and producing method thereof
US5892318A (en) * 1997-01-02 1999-04-06 Motorola Inc. Piezoelectric transformer with multiple output
US5894647A (en) * 1997-06-30 1999-04-20 Tfr Technologies, Inc. Method for fabricating piezoelectric resonators and product

Cited By (282)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297515B1 (en) * 1998-09-11 2001-10-02 Texas Instruments Incorporated Integrated acoustic thin film resonator
US6441703B1 (en) * 2000-01-18 2002-08-27 Texas Instruments Incorporated Multiple frequency acoustic reflector array and monolithic cover for resonators and method
US6437667B1 (en) * 2000-02-04 2002-08-20 Agere Systems Guardian Corp. Method of tuning thin film resonator filters by removing or adding piezoelectric material
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6518860B2 (en) * 2001-01-05 2003-02-11 Nokia Mobile Phones Ltd BAW filters having different center frequencies on a single substrate and a method for providing same
US6407649B1 (en) * 2001-01-05 2002-06-18 Nokia Corporation Monolithic FBAR duplexer and method of making the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6483229B2 (en) * 2001-03-05 2002-11-19 Agilent Technologies, Inc. Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method
US6469597B2 (en) * 2001-03-05 2002-10-22 Agilent Technologies, Inc. Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
DE10207329B4 (en) * 2001-03-05 2009-04-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. A process for the mass loading of acoustic thin film bulk resonators (FBARs) for producing resonators with different frequencies and apparatus incorporating the method
US6617249B2 (en) * 2001-03-05 2003-09-09 Agilent Technologies, Inc. Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method
DE10207328B4 (en) * 2001-03-05 2009-12-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. A method for providing different frequency settings for an acoustic Dünnfilmvolumenresonator- (FBAR) filters, and apparatus incorporating the method
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
US6650204B2 (en) 2001-06-29 2003-11-18 Intel Corporation Resonator frequency correction by modifying support structures
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20100107389A1 (en) * 2002-01-11 2010-05-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating an electrode for a bulk acoustic resonator
US6842089B2 (en) * 2002-05-21 2005-01-11 Samsung Electro-Mechanics Co., Ltd. Film bulk acoustic resonator (FBAR) device
US20030218518A1 (en) * 2002-05-21 2003-11-27 Samsung Electro-Mechanics Co., Ltd. Film bulk acoustic resonator (FBAR) device and method for fabricating the same
DE10256937B4 (en) * 2002-12-05 2018-02-01 Snaptrack, Inc. With bulk acoustic waves working component with asymmetrical / symmetrical wiring
US20040150293A1 (en) * 2002-12-05 2004-08-05 Michael Unterberger Component operating with bulk acoustic waves, and having asymmetric/symmetrical circuitry
US6917261B2 (en) * 2002-12-05 2005-07-12 Epcos Ag Component operating with bulk acoustic waves, and having asymmetric/symmetrical circuitry
US6998940B2 (en) * 2003-01-15 2006-02-14 Epcos Inc. Component operating with bulk acoustic waves and a method for producing the component
US20040145430A1 (en) * 2003-01-15 2004-07-29 Epcos Ag Component operating with bulk acoustic waves and a method for producing the component
US7802349B2 (en) 2003-03-07 2010-09-28 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
US20050140466A1 (en) * 2003-10-30 2005-06-30 Larson John D.Iii Decoupled stacked bulk acoustic resonator-based band-pass filter
US20050128030A1 (en) * 2003-10-30 2005-06-16 Larson John D.Iii Impedance transformation ratio control in film acoustically-coupled transformers
US20050093653A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
US6987433B2 (en) 2003-10-30 2006-01-17 Agilent Technologies, Inc. Film acoustically-coupled transformer with reverse C-axis piezoelectric material
US20050093657A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Film acoustically-coupled transformer with reverse C-axis piezoelectric material
US7019605B2 (en) 2003-10-30 2006-03-28 Larson Iii John D Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
US7091649B2 (en) 2003-10-30 2006-08-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements
US20060185139A1 (en) * 2003-10-30 2006-08-24 Larson John D Iii Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements
US7173504B2 (en) 2003-10-30 2007-02-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transformation ratio control in film acoustically-coupled transformers
US7242270B2 (en) 2003-10-30 2007-07-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Decoupled stacked bulk acoustic resonator-based band-pass filter
US20050093655A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Film acoustically-coupled transformer
DE112004002027B4 (en) * 2003-10-30 2011-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically coupled film transformer
DE112004002035B4 (en) * 2003-10-30 2010-11-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Impedance transformation ratio control in acoustically coupled film Transformers
DE112004001968B4 (en) * 2003-10-30 2010-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Decoupled, stacked, acoustic volume resonator bandpass filter with controllable pass bandwidth
US7332985B2 (en) 2003-10-30 2008-02-19 Avago Technologies Wireless Ip (Singapore) Pte Ltd. Cavity-less film bulk acoustic resonator (FBAR) devices
US20050093396A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements
US20050093656A1 (en) * 2003-10-30 2005-05-05 Larson John D.Iii Thin-film acoustically-coupled transformer
US7362198B2 (en) 2003-10-30 2008-04-22 Avago Technologies Wireless Ip (Singapore) Pte. Ltd Pass bandwidth control in decoupled stacked bulk acoustic resonator devices
DE112004001996B4 (en) * 2003-10-30 2010-07-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Passband-width control in decoupled stacked bulk acoustic Volumenresonatorvorrichtungen
US7367095B2 (en) 2003-10-30 2008-05-06 Avago Technologies General Ip Pte Ltd Method of making an acoustically coupled transformer
US7424772B2 (en) 2003-10-30 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
US7388455B2 (en) 2003-10-30 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Film acoustically-coupled transformer with increased common mode rejection
US6946928B2 (en) 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US7391285B2 (en) 2003-10-30 2008-06-24 Avago Technologies Wireless Ip Pte Ltd Film acoustically-coupled transformer
US7400217B2 (en) 2003-10-30 2008-07-15 Avago Technologies Wireless Ip Pte Ltd Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith
US7408428B2 (en) 2003-10-30 2008-08-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Temperature-compensated film bulk acoustic resonator (FBAR) devices
DE112004002038B4 (en) * 2003-10-30 2010-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically coupled film transformer with increased common-mode rejection
US7358831B2 (en) 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
CN100586010C (en) 2004-03-09 2010-01-27 安华高科技无线Ip(新加坡)私人有限公司 Bulk acoustic wave filter and method for eliminating unwanted side passbands
US20050200433A1 (en) * 2004-03-09 2005-09-15 Infineon Technologies Ag Bulk acoustic wave filter and method for eliminating unwanted side passbands
US7439824B2 (en) 2004-03-09 2008-10-21 Infineon Technologies Ag Bulk acoustic wave filter and method for eliminating unwanted side passbands
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US7714684B2 (en) 2004-10-01 2010-05-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using alternating frame structure
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US8143082B2 (en) 2004-12-15 2012-03-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US8188810B2 (en) 2004-12-22 2012-05-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
US7427819B2 (en) 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US8230562B2 (en) 2005-04-06 2012-07-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating an acoustic resonator comprising a filled recessed region
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7436269B2 (en) 2005-04-18 2008-10-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonators and method of making the same
US7443269B2 (en) 2005-07-27 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7391286B2 (en) 2005-10-06 2008-06-24 Avago Wireless Ip Pte Ltd Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
US7675390B2 (en) 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7737807B2 (en) 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7525398B2 (en) 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7423503B2 (en) 2005-10-18 2008-09-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating film acoustically-coupled transformer
US7852644B2 (en) 2005-10-31 2010-12-14 Avago Technologies General Ip (Singapore) Pte. Ltd. AC-DC power converter
US7463499B2 (en) 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7561009B2 (en) 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
US7514844B2 (en) 2006-01-23 2009-04-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic data coupling system and method
US20070170815A1 (en) * 2006-01-23 2007-07-26 Unkrich Mark A Acoustic data coupling system and method
US20070171002A1 (en) * 2006-01-23 2007-07-26 Unkrich Mark A Dual path acoustic data coupling system and method
US7586392B2 (en) 2006-01-23 2009-09-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Dual path acoustic data coupling system and method
US7612636B2 (en) 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US8238129B2 (en) 2006-03-09 2012-08-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US8080854B2 (en) 2006-03-10 2011-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
US20100107400A1 (en) * 2006-05-17 2010-05-06 Avago Technologies Wireless Ip (Singapore) Pte.Ltd Method of manufacturing an acoustic mirror
US8256093B2 (en) 2006-05-17 2012-09-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of manufacturing an acoustic mirror
US20070279153A1 (en) * 2006-05-31 2007-12-06 Ruby Richard C Piezoelectric resonator structures and electrical filters
US7629865B2 (en) 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
US7728696B2 (en) 2006-06-19 2010-06-01 Maxim Integrated Products, Inc. Harmonic termination of power amplifiers using BAW filter output matching circuits
US7598827B2 (en) 2006-06-19 2009-10-06 Maxim Integrated Products Harmonic termination of power amplifiers using BAW filter output matching circuits
US20090179714A1 (en) * 2006-06-19 2009-07-16 Ali-Ahmad Walid Y Harmonic Termination Of Power Amplifiers Using BAW Filter Output Matching Circuits
US20070290767A1 (en) * 2006-06-19 2007-12-20 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
US7586389B2 (en) 2006-06-19 2009-09-08 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
US7515018B2 (en) 2006-08-31 2009-04-07 Martin Handtmann Acoustic resonator
US20080055020A1 (en) * 2006-08-31 2008-03-06 Infineon Technologies Ag Acoustic Resonator
US7508286B2 (en) 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
DE102008048454A1 (en) 2007-09-24 2009-04-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Hybridakustikresonator-based filters
DE102008048906A1 (en) 2007-09-28 2009-04-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. The single-stack coupled resonators with differential output
US7791435B2 (en) 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
WO2010004534A1 (en) * 2008-07-11 2010-01-14 Nxp B.V. Bulk acoustic wave resonator using acoustic reflector layers as inductive or capacitive circuit element
DE102009038452A1 (en) 2008-08-29 2010-03-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Einzelkavitätsakustikresonatoren and electrical filter comprising Einzelkavitätsakustikresonatoren
US20100052815A1 (en) * 2008-08-29 2010-03-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single cavity acoustic resonators and electrical filters comprising single cavity acoustic resonators
US7889024B2 (en) 2008-08-29 2011-02-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single cavity acoustic resonators and electrical filters comprising single cavity acoustic resonators
US8291559B2 (en) * 2009-02-24 2012-10-23 Epcos Ag Process for adapting resonance frequency of a BAW resonator
US20100212127A1 (en) * 2009-02-24 2010-08-26 Habbo Heinze Process for Adapting Resonance Frequency of a BAW Resonator
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
DE102010030454A1 (en) 2009-06-24 2010-12-30 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Akustikresonatorstruktur having a bridge
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8692630B2 (en) * 2009-06-30 2014-04-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Guided acoustic wave resonant device and method for producing the device
US20100327995A1 (en) * 2009-06-30 2010-12-30 Commissariat a L'Energie Atomique at aux Energies Alternatives Guided Acoustic Wave Resonant Device and Method for Producing the Device
US20110121689A1 (en) * 2009-11-23 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Polarity determining seed layer and method of fabricating piezoelectric materials with specific c-axis
US9847768B2 (en) 2009-11-23 2017-12-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis
US9219464B2 (en) 2009-11-25 2015-12-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants
DE102010043797A1 (en) 2009-11-25 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator of electric filter used in duplexer, has cantilevered portion that is provided in one side among several sides of electrode
US9450561B2 (en) 2009-11-25 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US20110180391A1 (en) * 2010-01-22 2011-07-28 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8283999B2 (en) 2010-02-23 2012-10-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
US20110204995A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators
US20110204997A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
US8508315B2 (en) 2010-02-23 2013-08-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically coupled resonator filter with impedance transformation ratio controlled by resonant frequency difference between two coupled resonators
DE102011004553A1 (en) 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Volumenakustikresonatorstrukturen containing a single acoustic coupling material layer having an inhomogeneous acoustic characteristic
US20110204996A1 (en) * 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer
DE102011004528A1 (en) 2010-02-23 2011-08-25 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic coupling layer for coupled resonator filter, and method of fabricating an acoustic coupling layer
US8587391B2 (en) 2010-02-23 2013-11-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer
US8390397B2 (en) 2010-03-29 2013-03-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structure comprising hybrid electrodes
US20110237204A1 (en) * 2010-03-29 2011-09-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structure comprising hybrid electrodes
US9479139B2 (en) 2010-04-29 2016-10-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
US9197185B2 (en) 2010-04-29 2015-11-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrodes with buried temperature compensating layers
US8436516B2 (en) 2010-04-29 2013-05-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Resonator device including electrode with buried temperature compensating layer
CN102056037B (en) 2010-12-20 2014-08-13 张�浩 Acoustical coupling apparatus
CN102056037A (en) * 2010-12-20 2011-05-11 张�浩 Acoustical coupling apparatus
US8633781B2 (en) 2010-12-21 2014-01-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Combined balun and impedance matching circuit
US9859205B2 (en) 2011-01-31 2018-01-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9099983B2 (en) 2011-02-28 2015-08-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector
US10284173B2 (en) 2011-02-28 2019-05-07 Avago Technologies International Sales Pte. Limited Acoustic resonator device with at least one air-ring and frame
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9571064B2 (en) 2011-02-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with at least one air-ring and frame
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9991871B2 (en) 2011-02-28 2018-06-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a ring
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
DE102012213892A1 (en) 2011-02-28 2013-02-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator structure for use in e.g. voltage transformer, has top electrode arranged over piezoelectric layer, and bridge formed in layer, where bridge is surrounded by piezoelectric material of layer
US9246473B2 (en) 2011-03-29 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9490770B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector
US9525397B2 (en) 2011-03-29 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic reflector, frame and collar
DE102012205033A1 (en) 2011-03-29 2012-10-04 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator structure i.e. double bulk acoustic resonator structure, for ladder filter of e.g. portable communication device, has top electrode placed over piezoelectric layer, and bridge placed between two electrodes
US8872604B2 (en) 2011-05-05 2014-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor
US9154111B2 (en) 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
DE102012210160A1 (en) 2011-06-16 2012-12-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulkakustikresonator having a non-piezoelectric layer
US8330325B1 (en) 2011-06-16 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
DE102012210239A1 (en) 2011-06-16 2012-12-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. having Bulkakustikresonator having a non-piezoelectric layer and a bridge
DE102012214323A1 (en) 2011-08-12 2013-02-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator used in electrical filter, has electrodes that are respectively located over piezoelectric layer, and bridge that is positioned between electrodes
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9577603B2 (en) 2011-09-14 2017-02-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Solidly mounted acoustic resonator having multiple lateral features
US8797123B2 (en) 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US8896395B2 (en) 2011-09-14 2014-11-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having multiple lateral features
US9525399B2 (en) 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
DE102012219838A1 (en) 2011-10-31 2013-05-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US20140312994A1 (en) * 2011-11-11 2014-10-23 Teknologian tutkimuskeskut VTT Laterally coupled bulk acoustic wave filter with improved passband characteristics
US9219466B2 (en) * 2011-11-11 2015-12-22 Teknologian Tutkimuskeskus Vtt Oy Laterally coupled bulk acoustic wave filter with improved passband characteristics
US8692624B2 (en) 2011-12-15 2014-04-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Tuning of MEMS oscillator
DE102012223303A1 (en) 2011-12-15 2013-06-20 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Vote of a MEMS oscillator
DE102012224460A1 (en) 2011-12-27 2013-06-27 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Solid-mount bulk acoustic wave resonator (SMR) used in wireless communication device, has active area of acoustic reflector that is formed by overlapping of acoustic reflector, electrodes and piezoelectric layer
US9083311B2 (en) 2011-12-30 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Apparatus having double phase-matched configuration for reducing magnitude of intermodulation products
US9154103B2 (en) 2012-01-30 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9667220B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising heater and sense resistors
US9667218B2 (en) 2012-01-30 2017-05-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator comprising feedback circuit
DE102013201429B4 (en) 2012-01-30 2018-12-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature-controlled acoustical resonator
US9762205B2 (en) 2012-01-30 2017-09-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature controlled acoustic resonator
US9065421B2 (en) 2012-01-31 2015-06-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making
US9099984B2 (en) * 2012-03-20 2015-08-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives HBAR resonator comprising a structure for amplifying the amplitude of at least one resonance of said resonator and methods for producing such a resonator
US20130249648A1 (en) * 2012-03-20 2013-09-26 Commissariat A L'Energie Atomique Et Aux Energies Alternatives HBAR Resonator Comprising A Structure For Amplifying The Amplitude Of At Least One Resonance Of Said Resonator And Methods For Producing Such A Resonator
US9093979B2 (en) 2012-06-05 2015-07-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally-coupled acoustic resonators
DE102013221030A1 (en) 2012-10-18 2014-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator device for cellular telephone, has bridge that is formed within acoustic impedance layers of acoustic reflector and resonator stack, and piezoelectric layer that is formed over bottom electrode
DE102013221030B4 (en) 2012-10-18 2019-03-07 Avago Technologies International Sales Pte. Limited Volume acoustic waves (BAW) resonator device comprising an acoustic reflector and a bridge
US9385684B2 (en) 2012-10-23 2016-07-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having guard ring
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9225313B2 (en) 2012-10-27 2015-12-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics
US9136819B2 (en) 2012-10-27 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9438288B2 (en) 2012-12-07 2016-09-06 Avago Technologies General Ip (Singapore) Pte. Ltd. System providing reduced intermodulation distortion
US9748918B2 (en) 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9450167B2 (en) 2013-03-28 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature compensated acoustic resonator device having an interlayer
US9608192B2 (en) 2013-03-28 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature compensated acoustic resonator device
US9088265B2 (en) 2013-05-17 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer
US9835595B2 (en) 2013-05-23 2017-12-05 Qorvo Us, Inc. Sensors, methods of making and devices
DE102014107592A1 (en) 2013-05-31 2014-12-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having a piezoelectric layer with varying amounts of dopant
US9602073B2 (en) 2013-05-31 2017-03-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with varying amounts of dopant
DE102014109715A1 (en) 2013-07-10 2015-01-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface passivation of a substrate by mechanical damage of the surface layer
US9306511B2 (en) 2013-07-30 2016-04-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Power amplifier and distributed filter
US9219517B2 (en) 2013-10-02 2015-12-22 Triquint Semiconductor, Inc. Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers
US9793877B2 (en) 2013-12-17 2017-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Encapsulated bulk acoustic wave (BAW) resonator device
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9520855B2 (en) 2014-02-26 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonators having doped piezoelectric material and frame elements
DE102014105952A1 (en) 2014-02-26 2015-08-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic wave resonators with doped piezoelectric material and frame members
DE102014105947A1 (en) 2014-02-27 2015-08-27 Avago Technologies General Ip (Singapore) Pte. Ltd. And magnetron sputtering process for producing a thin film using a magnetron sputtering
US9455681B2 (en) 2014-02-27 2016-09-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having doped piezoelectric layer
DE102014105949A1 (en) 2014-03-19 2015-09-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally coupled resonator filter with apodized shape
DE102014105949B4 (en) 2014-03-19 2018-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally coupled resonator filter with apodized shape
US9698753B2 (en) 2014-03-19 2017-07-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally coupled resonator filter having apodized shape
DE102014105951A1 (en) 2014-03-26 2015-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. the same acoustic resonator with a planarizing layer and a method for producing
US9680439B2 (en) 2014-03-26 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating acoustic resonator with planarization layer
US9876483B2 (en) 2014-03-28 2018-01-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device including trench for providing stress relief
DE102014105950A1 (en) 2014-03-28 2015-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device having a trench for providing a voltage discharge
US9853626B2 (en) 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US9548438B2 (en) 2014-03-31 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers
DE102015106724A1 (en) 2014-04-30 2015-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator with an air wing and a temperature compensating layer
US9401691B2 (en) 2014-04-30 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with air-ring and temperature compensating layer
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
DE102015107569A9 (en) 2014-05-15 2016-04-07 Avago Technologies General Ip Pte. Ltd. A process for producing rare earth-doped piezo-electric material with different amounts of dopant and a C-axis orientation selected
DE102015107569A1 (en) 2014-05-15 2015-11-19 Avago Technologies General Ip Pte. Ltd. A process for producing rare earth-doped piezo-electric material with different amounts of dopant and a C-axis orientation selected
DE102015108446A1 (en) 2014-05-28 2015-12-03 Avago Technologies General Ip Pte. Ltd. An acoustic resonator disposed with an underlying in a dielectric, the electrical connection
DE102015108446B4 (en) 2014-05-28 2018-12-06 Avago Technologies General Ip Pte. Ltd. An acoustic resonator disposed with an underlying in a dielectric, the electrical connection
US9793874B2 (en) 2014-05-28 2017-10-17 Avago Technologies General Ip Singapore (Singapore) Pte. Ltd. Acoustic resonator with electrical interconnect disposed in underlying dielectric
US9691963B2 (en) 2014-05-29 2017-06-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator and filter device with comb electrodes and support pillars separating piezoelectric layer
US9608594B2 (en) 2014-05-29 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer
US9698754B2 (en) 2014-05-29 2017-07-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitive coupled resonator and filter device with comb electrodes and support frame separation from piezoelectric layer
DE102015108517B4 (en) 2014-05-29 2018-12-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitively coupled resonator means with air gap, the electrode and piezoelectric layer separates
DE102015108517A1 (en) 2014-05-29 2015-12-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Capacitively coupled resonator means with air gap, the electrode and piezoelectric layer separates
DE102015108508B4 (en) 2014-05-30 2018-12-06 Avago Technologies General Ip (Singapore) Pte. Ltd. An acoustic resonator with a vertically extended acoustic cavity
US9634642B2 (en) 2014-05-30 2017-04-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising vertically extended acoustic cavity
DE102015108508A1 (en) 2014-05-30 2015-12-03 Avago Technologies General Ip (Singapore) Pte. Ltd. An acoustic resonator with a vertically extended acoustic cavity
DE102015114224A1 (en) 2014-08-28 2016-03-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic layer volume resonators with back vias
US9444428B2 (en) 2014-08-28 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonators comprising backside vias
US9621126B2 (en) 2014-10-22 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer
DE102015117953A1 (en) 2014-10-22 2016-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. A bulk acoustic wave resonator, which includes a temperature compensation device comprising a layer of low acoustic impedance
DE102015117953B4 (en) 2014-10-22 2018-10-11 Avago Technologies General Ip (Singapore) Pte. Ltd. A bulk acoustic wave resonator, which includes a temperature compensation device comprising a layer of low acoustic impedance
US9571063B2 (en) 2014-10-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with structures having different apodized shapes
US20160164489A1 (en) * 2014-12-08 2016-06-09 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter
US10110197B2 (en) * 2014-12-08 2018-10-23 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter
DE102015122834A1 (en) 2014-12-27 2016-06-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonators split-flow
DE102016109829A1 (en) 2015-05-29 2016-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having a plurality of contacts on connection sides
DE102016109826A1 (en) 2015-05-29 2016-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having a plurality of acoustic reflectors
US10084425B2 (en) 2015-05-29 2018-09-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having comprising a plurality of connection-side contacts
US10177736B2 (en) 2015-05-29 2019-01-08 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator comprising multiple acoustic reflectors
US9762208B2 (en) 2015-09-30 2017-09-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Very wide bandwidth composite bandpass filter with steep roll-off
US9893713B2 (en) 2015-09-30 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation
US10164605B2 (en) 2016-01-26 2018-12-25 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator with piezoelectric layer comprising lithium niobate or lithium tantalate
DE102017101602A1 (en) 2016-01-29 2017-08-03 Avago Technologies General Ip (Singapore) Pte. Ltd. A multiplexer wide bandwidth based on LC and acoustic resonator circuits for performing Carrier Aggregation
US10367472B2 (en) 2016-02-29 2019-07-30 Avago Technologies International Sales Pte. Limited Acoustic resonator having integrated lateral feature and temperature compensation feature
DE102017106582A1 (en) 2016-03-29 2017-10-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Temperature-compensated acoustic resonator device with thinner Impfzwischenschicht
DE102017108340A1 (en) 2016-04-21 2017-10-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (BAW) resonator
US10128813B2 (en) 2016-04-21 2018-11-13 Avago Technologies International Sales Pte. Limited Bulk acoustic wave (BAW) resonator structure
WO2017191499A1 (en) 2016-05-06 2017-11-09 Waseda University Piezoelectric layer and piezoelectric device comprising the piezoelectric layer
DE102017109102A1 (en) 2016-06-29 2018-01-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with at least one air ring and a frame
US10284168B2 (en) 2016-10-27 2019-05-07 Avago Technologies International Sales Pte. Limited Bulk acoustic wave resonator
US10263601B2 (en) 2016-10-31 2019-04-16 Avago Technologies International Sales Pte. Limited Tunable bulk acoustic resonator device with improved insertion loss
US10263587B2 (en) 2016-12-23 2019-04-16 Avago Technologies International Sales Pte. Limited Packaged resonator with polymeric air cavity package
DE102018107674A1 (en) 2017-03-31 2018-10-04 Avago Technologies General Ip (Singapore) Pte. Ltd. An acoustic resonator with expanded cavity
US10256788B2 (en) 2017-03-31 2019-04-09 Avago Technologies International Sales Pte. Limited Acoustic resonator including extended cavity

Similar Documents

Publication Publication Date Title
KR100799391B1 (en) Thin film acoustic resonator and method of manufacturing the resonator
JP5099151B2 (en) Method for manufacturing a boundary acoustic wave device
JP3940932B2 (en) FBAR, a thin film piezoelectric device and manufacturing method thereof
US6507983B1 (en) Method of making tunable thin film acoustic resonators
CN100440730C (en) Electronic component and method for manufacturing the same
US6812619B1 (en) Resonator structure and a filter comprising such a resonator structure
US7128941B2 (en) Method for fabricating film bulk acoustic resonator (FBAR) device
JP4063765B2 (en) Piezoelectric elements, and generating method thereof
US6424237B1 (en) Bulk acoustic resonator perimeter reflection system
US7791432B2 (en) Contour-mode piezoelectric micromechanical resonators
KR100676151B1 (en) Film bulk acoustic resonator and method of manufacturing the same
US6924717B2 (en) Tapered electrode in an acoustic resonator
US20030128081A1 (en) Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers
EP1227582B1 (en) Solidly mounted multiresonator bulk acoustic wave filter with a patterned acoustic mirror
US7482737B2 (en) Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same
JP4039322B2 (en) Piezoelectric filter, a duplexer, a composite piezoelectric resonator and a communication device, as well, the piezoelectric filter frequency adjustment method
JP4318653B2 (en) Method of removing the bulk acoustic wave filter and undesired side-passband
JP4455817B2 (en) Piezoelectric lamina resonator device comprising a detuning layer sequence
JP4661958B2 (en) The piezoelectric resonator and piezoelectric filter
KR101130145B1 (en) Resonator structure and method of producing it
CN100542022C (en) Resonator, filter and fabrication of resonator
US6943647B2 (en) Bulk acoustic wave filter with a roughened substrate bottom surface and method of fabricating same
Lakin et al. Solidly mounted resonators and filters
US5432392A (en) Surface wave device
JP5817673B2 (en) The method of manufacturing a piezoelectric thin-film resonator and a piezoelectric thin film

Legal Events

Date Code Title Description
AS Assignment

Owner name: TFR TECHNOLOGIES, INC., OREGON

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LAKIN, KENNETH MEADE;REEL/FRAME:010139/0638

Effective date: 19990726

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: TRIQUINT SEMICONDUCTOR, INC., OREGON

Free format text: MERGER;ASSIGNOR:TFR TECHNOLOGIES, INC.;REEL/FRAME:016844/0147

Effective date: 20041214

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: QORVO US, INC., NORTH CAROLINA

Free format text: MERGER;ASSIGNOR:TRIQUINT SEMICONDUCTOR, INC.;REEL/FRAME:039050/0193

Effective date: 20160330