CN101466795B - 可固化的有机基聚硅氧烷组合物和半导体器件 - Google Patents

可固化的有机基聚硅氧烷组合物和半导体器件 Download PDF

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CN101466795B
CN101466795B CN2007800215923A CN200780021592A CN101466795B CN 101466795 B CN101466795 B CN 101466795B CN 2007800215923 A CN2007800215923 A CN 2007800215923A CN 200780021592 A CN200780021592 A CN 200780021592A CN 101466795 B CN101466795 B CN 101466795B
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organopolysiloxane
composition
sio
aryl
cured body
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CN101466795A (zh
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森田好次
寺田匡庆
江南博司
吉武诚
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Led Device Packages (AREA)
CN2007800215923A 2006-06-23 2007-06-18 可固化的有机基聚硅氧烷组合物和半导体器件 Active CN101466795B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006173777A JP5202822B2 (ja) 2006-06-23 2006-06-23 硬化性オルガノポリシロキサン組成物および半導体装置
JP173777/2006 2006-06-23
PCT/JP2007/062649 WO2007148812A1 (en) 2006-06-23 2007-06-18 Curable organopolysiloxane composition and semiconductor device

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CN101466795A CN101466795A (zh) 2009-06-24
CN101466795B true CN101466795B (zh) 2011-08-17

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US (1) US8080614B2 (enExample)
EP (1) EP2032653B1 (enExample)
JP (1) JP5202822B2 (enExample)
KR (1) KR101436800B1 (enExample)
CN (1) CN101466795B (enExample)
AT (1) ATE451426T1 (enExample)
DE (1) DE602007003724D1 (enExample)
MY (1) MY147862A (enExample)
TW (1) TWI425053B (enExample)
WO (1) WO2007148812A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9593277B2 (en) 2014-02-04 2017-03-14 Dow Corning Toray Co., Ltd. Curable silicone composition, cured product therefrom, and optical semiconductor device
US9944759B2 (en) 2014-02-04 2018-04-17 Dow Corning Toray Co., Ltd. Curable silicone composition, cured product therefrom, and optical semiconductor device

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JP5148088B2 (ja) * 2006-08-25 2013-02-20 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP4680274B2 (ja) * 2008-03-10 2011-05-11 信越化学工業株式会社 高硬度シリコーンゴムを与える組成物およびそれを封止材として用いた半導体装置
JP5136963B2 (ja) * 2008-03-24 2013-02-06 信越化学工業株式会社 硬化性シリコーンゴム組成物及び半導体装置
JP5000566B2 (ja) * 2008-03-27 2012-08-15 信越化学工業株式会社 硬化性シリコーンゴム組成物、およびそれを封止材料として用いた光半導体装置
JP5972511B2 (ja) 2008-03-31 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物およびその硬化物
JP5628474B2 (ja) 2008-03-31 2014-11-19 東レ・ダウコーニング株式会社 オルガノポリシロキサン、その製造方法、硬化性シリコーン組成物、およびその硬化物
JP5667740B2 (ja) * 2008-06-18 2015-02-12 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP5972512B2 (ja) * 2008-06-18 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP2010001358A (ja) * 2008-06-19 2010-01-07 Shin-Etsu Chemical Co Ltd 付加硬化型シリコーン組成物、その硬化物及び該組成物からなる光学素子封止材
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
WO2010050625A1 (en) 2008-10-31 2010-05-06 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
CA2759638A1 (en) * 2009-04-22 2010-10-28 Shat-R-Shield, Inc. Silicone coated light-emitting diode
US8697458B2 (en) 2009-04-22 2014-04-15 Shat-R-Shield, Inc. Silicone coated light-emitting diode
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WO2011090364A2 (ko) * 2010-01-25 2011-07-28 (주)Lg화학 경화성 조성물
CN102725866A (zh) * 2010-01-25 2012-10-10 Lg化学株式会社 用于光伏电池的薄板
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KR101074505B1 (ko) 2010-01-25 2011-10-17 주식회사 엘지화학 광전지 모듈
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CN104479359B (zh) * 2010-01-25 2018-04-03 Lg化学株式会社 可固化组合物
US9379296B2 (en) 2010-01-25 2016-06-28 Lg Chem, Ltd. Silicone resin
US9410018B2 (en) 2010-01-25 2016-08-09 Lg Chem, Ltd. Curable composition
JP5377401B2 (ja) * 2010-04-20 2013-12-25 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物
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KR20120078606A (ko) * 2010-12-31 2012-07-10 제일모직주식회사 봉지재 및 상기 봉지재를 포함하는 전자 소자
JP5522111B2 (ja) 2011-04-08 2014-06-18 信越化学工業株式会社 シリコーン樹脂組成物及び当該組成物を使用した光半導体装置
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KR20140035368A (ko) 2011-05-11 2014-03-21 헨켈 차이나 컴퍼니 리미티드 개선된 장벽 특성을 갖는 실리콘 수지
JP2014522550A (ja) * 2011-05-16 2014-09-04 シャット−アール−シールド インコーポレイテッド 電子光源を持つ印刷回路板に光学レンズを取り付けるための方法
JP5992666B2 (ja) 2011-06-16 2016-09-14 東レ・ダウコーニング株式会社 架橋性シリコーン組成物及びその架橋物
JP5893874B2 (ja) 2011-09-02 2016-03-23 信越化学工業株式会社 光半導体装置
JP5912600B2 (ja) * 2011-09-16 2016-04-27 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
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KR102419245B1 (ko) * 2014-09-01 2022-07-11 듀폰 도레이 스페셜티 머티리얼즈 가부시키가이샤 경화성 실리콘 조성물, 경화성 핫 멜트 실리콘, 및 광 디바이스
JP6678388B2 (ja) * 2014-12-25 2020-04-08 信越化学工業株式会社 硬化性シリコーン樹脂組成物
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US6001943A (en) * 1997-01-30 1999-12-14 Dow Corning Toray Silicone Co., Ltd. Silicone gel composition and silicone gel for use in sealing and filling of electrical and electronic parts
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US9593277B2 (en) 2014-02-04 2017-03-14 Dow Corning Toray Co., Ltd. Curable silicone composition, cured product therefrom, and optical semiconductor device
US9944759B2 (en) 2014-02-04 2018-04-17 Dow Corning Toray Co., Ltd. Curable silicone composition, cured product therefrom, and optical semiconductor device

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MY147862A (en) 2013-01-31
WO2007148812A1 (en) 2007-12-27
US20090179180A1 (en) 2009-07-16
TW200808908A (en) 2008-02-16
JP2008001828A (ja) 2008-01-10
EP2032653B1 (en) 2009-12-09
JP5202822B2 (ja) 2013-06-05
KR101436800B1 (ko) 2014-09-02
US8080614B2 (en) 2011-12-20
CN101466795A (zh) 2009-06-24
TWI425053B (zh) 2014-02-01
KR20090028720A (ko) 2009-03-19
EP2032653A1 (en) 2009-03-11
DE602007003724D1 (de) 2010-01-21
ATE451426T1 (de) 2009-12-15

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