JP5202822B2 - 硬化性オルガノポリシロキサン組成物および半導体装置 - Google Patents

硬化性オルガノポリシロキサン組成物および半導体装置 Download PDF

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Publication number
JP5202822B2
JP5202822B2 JP2006173777A JP2006173777A JP5202822B2 JP 5202822 B2 JP5202822 B2 JP 5202822B2 JP 2006173777 A JP2006173777 A JP 2006173777A JP 2006173777 A JP2006173777 A JP 2006173777A JP 5202822 B2 JP5202822 B2 JP 5202822B2
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sio
curable organopolysiloxane
organopolysiloxane composition
component
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Japanese (ja)
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JP2008001828A (ja
JP2008001828A5 (enExample
Inventor
好次 森田
匡慶 寺田
博司 江南
誠 吉武
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Priority to JP2006173777A priority Critical patent/JP5202822B2/ja
Priority to TW096119562A priority patent/TWI425053B/zh
Priority to PCT/JP2007/062649 priority patent/WO2007148812A1/en
Priority to EP07767457A priority patent/EP2032653B1/en
Priority to MYPI20085206A priority patent/MY147862A/en
Priority to US12/306,049 priority patent/US8080614B2/en
Priority to CN2007800215923A priority patent/CN101466795B/zh
Priority to KR1020087031182A priority patent/KR101436800B1/ko
Priority to AT07767457T priority patent/ATE451426T1/de
Priority to DE602007003724T priority patent/DE602007003724D1/de
Publication of JP2008001828A publication Critical patent/JP2008001828A/ja
Publication of JP2008001828A5 publication Critical patent/JP2008001828A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Led Device Packages (AREA)
JP2006173777A 2006-06-23 2006-06-23 硬化性オルガノポリシロキサン組成物および半導体装置 Active JP5202822B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2006173777A JP5202822B2 (ja) 2006-06-23 2006-06-23 硬化性オルガノポリシロキサン組成物および半導体装置
TW096119562A TWI425053B (zh) 2006-06-23 2007-05-31 硬化性有機聚矽氧烷組合物及半導體裝置
DE602007003724T DE602007003724D1 (de) 2006-06-23 2007-06-18 Härtbare organopolysiloxan-zusammensetzung und halbleiterbauelement
MYPI20085206A MY147862A (en) 2006-06-23 2007-06-18 Curable organopolysiloxane composition and semiconductor device
US12/306,049 US8080614B2 (en) 2006-06-23 2007-06-18 Curable organopolysiloxane composition and semiconductor device
CN2007800215923A CN101466795B (zh) 2006-06-23 2007-06-18 可固化的有机基聚硅氧烷组合物和半导体器件
PCT/JP2007/062649 WO2007148812A1 (en) 2006-06-23 2007-06-18 Curable organopolysiloxane composition and semiconductor device
AT07767457T ATE451426T1 (de) 2006-06-23 2007-06-18 Härtbare organopolysiloxan-zusammensetzung und halbleiterbauelement
EP07767457A EP2032653B1 (en) 2006-06-23 2007-06-18 Curable organopolysiloxane composition and semiconductor device
KR1020087031182A KR101436800B1 (ko) 2006-06-23 2007-06-18 경화성 오가노폴리실록산 조성물 및 반도체 디바이스

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006173777A JP5202822B2 (ja) 2006-06-23 2006-06-23 硬化性オルガノポリシロキサン組成物および半導体装置

Publications (3)

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JP2008001828A JP2008001828A (ja) 2008-01-10
JP2008001828A5 JP2008001828A5 (enExample) 2009-07-30
JP5202822B2 true JP5202822B2 (ja) 2013-06-05

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Country Link
US (1) US8080614B2 (enExample)
EP (1) EP2032653B1 (enExample)
JP (1) JP5202822B2 (enExample)
KR (1) KR101436800B1 (enExample)
CN (1) CN101466795B (enExample)
AT (1) ATE451426T1 (enExample)
DE (1) DE602007003724D1 (enExample)
MY (1) MY147862A (enExample)
TW (1) TWI425053B (enExample)
WO (1) WO2007148812A1 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148088B2 (ja) * 2006-08-25 2013-02-20 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP4680274B2 (ja) * 2008-03-10 2011-05-11 信越化学工業株式会社 高硬度シリコーンゴムを与える組成物およびそれを封止材として用いた半導体装置
JP5136963B2 (ja) * 2008-03-24 2013-02-06 信越化学工業株式会社 硬化性シリコーンゴム組成物及び半導体装置
JP5000566B2 (ja) * 2008-03-27 2012-08-15 信越化学工業株式会社 硬化性シリコーンゴム組成物、およびそれを封止材料として用いた光半導体装置
JP5628474B2 (ja) 2008-03-31 2014-11-19 東レ・ダウコーニング株式会社 オルガノポリシロキサン、その製造方法、硬化性シリコーン組成物、およびその硬化物
JP5972511B2 (ja) 2008-03-31 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物およびその硬化物
JP5667740B2 (ja) * 2008-06-18 2015-02-12 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP5972512B2 (ja) * 2008-06-18 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP2010001358A (ja) * 2008-06-19 2010-01-07 Shin-Etsu Chemical Co Ltd 付加硬化型シリコーン組成物、その硬化物及び該組成物からなる光学素子封止材
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
EP2352794A1 (en) 2008-10-31 2011-08-10 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
CN102449761A (zh) * 2009-04-22 2012-05-09 萨特-R-盾公司 涂覆聚硅氧烷的发光二极管
US8697458B2 (en) * 2009-04-22 2014-04-15 Shat-R-Shield, Inc. Silicone coated light-emitting diode
TWI435895B (zh) 2009-10-28 2014-05-01 Indial Technology Co Ltd Package material composition
WO2011090366A2 (ko) * 2010-01-25 2011-07-28 (주)Lg화학 광전지 모듈
CN102725863B (zh) * 2010-01-25 2016-06-29 Lg化学株式会社 用于光伏电池的薄板
US9410018B2 (en) 2010-01-25 2016-08-09 Lg Chem, Ltd. Curable composition
KR101064584B1 (ko) * 2010-01-25 2011-09-15 주식회사 엘지화학 광전지용 시트
US9379296B2 (en) 2010-01-25 2016-06-28 Lg Chem, Ltd. Silicone resin
DE202011110489U1 (de) * 2010-01-25 2014-04-17 Lg Chem, Ltd. Härtbare Zusammensetzung
JP5761647B2 (ja) * 2010-01-25 2015-08-12 エルジー・ケム・リミテッド 光電池モジュール
KR101152867B1 (ko) * 2010-01-25 2012-06-12 주식회사 엘지화학 경화성 조성물
JP5826767B2 (ja) * 2010-01-25 2015-12-02 エルジー・ケム・リミテッド シリコーン樹脂
JP5377401B2 (ja) * 2010-04-20 2013-12-25 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物
KR101277722B1 (ko) * 2010-07-14 2013-06-24 제일모직주식회사 하이브리드 실록산 중합체, 상기 하이브리드 실록산 중합체로부터 형성된 봉지재 및 상기 봉지재를 포함하는 전자 소자
KR20120078606A (ko) * 2010-12-31 2012-07-10 제일모직주식회사 봉지재 및 상기 봉지재를 포함하는 전자 소자
JP5522111B2 (ja) 2011-04-08 2014-06-18 信越化学工業株式会社 シリコーン樹脂組成物及び当該組成物を使用した光半導体装置
WO2012150850A2 (ko) * 2011-05-04 2012-11-08 주식회사 엘지화학 경화성 조성물
KR20140035368A (ko) 2011-05-11 2014-03-21 헨켈 차이나 컴퍼니 리미티드 개선된 장벽 특성을 갖는 실리콘 수지
BR112013029263A2 (pt) * 2011-05-16 2017-01-31 Shat-R-Shield Inc processo para fixação de uma lente óptica em uma placa de circuito impresso com fonte de luz eletrônica
JP5992666B2 (ja) 2011-06-16 2016-09-14 東レ・ダウコーニング株式会社 架橋性シリコーン組成物及びその架橋物
JP5893874B2 (ja) 2011-09-02 2016-03-23 信越化学工業株式会社 光半導体装置
JP5912600B2 (ja) * 2011-09-16 2016-04-27 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
KR101493131B1 (ko) * 2011-11-25 2015-02-13 주식회사 엘지화학 오가노폴리실록산
KR101560037B1 (ko) * 2011-11-25 2015-10-15 주식회사 엘지화학 경화성 조성물
EP2784128B1 (en) * 2011-11-25 2016-05-25 LG Chem, Ltd. Curable composition
KR101562091B1 (ko) * 2011-11-25 2015-10-21 주식회사 엘지화학 경화성 조성물
KR101560036B1 (ko) * 2011-11-25 2015-10-15 주식회사 엘지화학 경화성 조성물
CN104066771B (zh) * 2011-11-25 2016-12-28 Lg化学株式会社 制备有机聚硅氧烷的方法
JP5652387B2 (ja) * 2011-12-22 2015-01-14 信越化学工業株式会社 高信頼性硬化性シリコーン樹脂組成物及びそれを使用した光半導体装置
CN104583278B (zh) 2012-05-14 2018-04-10 莫门蒂夫性能材料股份有限公司 高折射率材料
GB201212782D0 (en) * 2012-07-18 2012-08-29 Dow Corning Organosiloxane compositions
JP5819787B2 (ja) * 2012-07-19 2015-11-24 信越化学工業株式会社 硬化性シリコーン樹脂組成物
EP2878633B1 (en) 2012-07-27 2020-12-30 LG Chem, Ltd. Hardening composition
JP2014031394A (ja) * 2012-08-01 2014-02-20 Shin Etsu Chem Co Ltd 付加硬化型シリコーン組成物、及び該組成物の硬化物により半導体素子が被覆された半導体装置
KR20150037956A (ko) 2012-08-02 2015-04-08 헨켈 차이나 컴퍼니 리미티드 폴리카르보실란 및 이를 포함하는 ｌｅｄ 캡슐화제 용의 경화성 조성물
WO2014019195A1 (en) 2012-08-02 2014-02-06 Henkel (China) Company Limited Curable compositions for LED encapsulants comprising a polycarbosilane and a hydrosilicone
JP6059472B2 (ja) 2012-09-07 2017-01-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および光半導体装置
WO2014062843A1 (en) * 2012-10-16 2014-04-24 Brewer Science Inc. Silicone polymers with high refractive indices and extended pot life
JP5819866B2 (ja) * 2013-01-10 2015-11-24 信越化学工業株式会社 付加硬化型シリコーン組成物、光学素子封止材および光学素子
JP6256780B2 (ja) * 2013-04-04 2018-01-10 エルジー・ケム・リミテッド 硬化性組成物
CN105492539B (zh) * 2013-08-29 2019-05-07 美国陶氏有机硅公司 可固化有机硅组合物、其固化产物及光学半导体器件
TWI624510B (zh) 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
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KR101714715B1 (ko) 2014-03-11 2017-03-09 제일모직 주식회사 봉지재 조성물, 봉지재, 및 전자 소자
KR102419245B1 (ko) * 2014-09-01 2022-07-11 듀폰 도레이 스페셜티 머티리얼즈 가부시키가이샤 경화성 실리콘 조성물, 경화성 핫 멜트 실리콘, 및 광 디바이스
JP6678388B2 (ja) * 2014-12-25 2020-04-08 信越化学工業株式会社 硬化性シリコーン樹脂組成物
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102136686B1 (ko) * 2018-09-21 2020-08-13 주식회사 케이씨씨 실리콘 조성물
CN110272627B (zh) * 2019-07-24 2021-11-23 杭州之江新材料有限公司 一种高折光指数的有机硅凝胶及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3574226B2 (ja) 1994-10-28 2004-10-06 東レ・ダウコーニング・シリコーン株式会社 硬化性シリコーン組成物およびその硬化物
CN1086713C (zh) * 1996-06-28 2002-06-26 罗纳·布朗克化学公司 可交联成粘性凝胶的硅氧烷组合物
JP3638746B2 (ja) * 1997-01-30 2005-04-13 東レ・ダウコーニング・シリコーン株式会社 電気・電子部品封止・充填用シリコーンゲル組成物およびシリコーンゲル
JP3344286B2 (ja) 1997-06-12 2002-11-11 信越化学工業株式会社 付加硬化型シリコーン樹脂組成物
US6432137B1 (en) * 1999-09-08 2002-08-13 Medennium, Inc. High refractive index silicone for use in intraocular lenses
JP2001261963A (ja) * 2000-03-17 2001-09-26 Dow Corning Toray Silicone Co Ltd シリコーンゴム組成物
JP2003128992A (ja) 2001-10-18 2003-05-08 Matsushita Electric Ind Co Ltd 親水性塗料
JP4040858B2 (ja) * 2001-10-19 2008-01-30 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
DE10204893A1 (de) * 2002-02-06 2003-08-14 Ge Bayer Silicones Gmbh & Co Selbsthaftende additionsvernetzende Silikonkautschukmischungen, ein Verfahren zu deren Herstellung, Verfahren zur Herstellung von Verbund-Formteilen und deren Verwendung
JP4409160B2 (ja) * 2002-10-28 2010-02-03 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2004359756A (ja) * 2003-06-03 2004-12-24 Wacker Asahikasei Silicone Co Ltd Ｌｅｄ用封止剤組成物
JP4908736B2 (ja) * 2003-10-01 2012-04-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2006063092A (ja) * 2004-07-29 2006-03-09 Dow Corning Toray Co Ltd 硬化性オルガノポリシロキサン組成物、その硬化方法、光半導体装置および接着促進剤

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