CN100550303C - 第ⅲ族氮化物晶体及其制备方法 - Google Patents

第ⅲ族氮化物晶体及其制备方法 Download PDF

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Publication number
CN100550303C
CN100550303C CNB2004100896735A CN200410089673A CN100550303C CN 100550303 C CN100550303 C CN 100550303C CN B2004100896735 A CNB2004100896735 A CN B2004100896735A CN 200410089673 A CN200410089673 A CN 200410089673A CN 100550303 C CN100550303 C CN 100550303C
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group iii
melt
iii nitride
crystal
nitrogen
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Chinese (zh)
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CN1612295A (zh
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弘田龙
中畑成二
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNB2004100896735A 2003-10-31 2004-10-29 第ⅲ族氮化物晶体及其制备方法 Expired - Fee Related CN100550303C (zh)

Applications Claiming Priority (4)

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JP2003373025 2003-10-31
JP2003373025 2003-10-31
JP2004195666 2004-07-01
JP2004195666A JP4534631B2 (ja) 2003-10-31 2004-07-01 Ｉｉｉ族窒化物結晶の製造方法

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CN1612295A CN1612295A (zh) 2005-05-04
CN100550303C true CN100550303C (zh) 2009-10-14

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US (1) US20050098090A1 (enExample)
EP (2) EP1538241B1 (enExample)
JP (1) JP4534631B2 (enExample)
KR (5) KR20050041994A (enExample)
CN (1) CN100550303C (enExample)
DE (1) DE602004018452D1 (enExample)
TW (1) TWI399796B (enExample)

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JP4881496B2 (ja) * 2007-04-24 2012-02-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
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JP5056688B2 (ja) * 2008-09-15 2012-10-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
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JP2010077022A (ja) * 2009-11-30 2010-04-08 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
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JP5522204B2 (ja) * 2012-06-14 2014-06-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
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CN106460228B (zh) * 2014-03-03 2019-04-26 国立大学法人大阪大学 Iii族氮化物结晶的制造方法及iii族氮化物结晶制造装置
JP6534030B2 (ja) * 2014-08-28 2019-06-26 国立大学法人名古屋大学 ＡｌＮ単結晶の作製方法
CN104878451B (zh) * 2015-06-16 2017-07-28 北京大学东莞光电研究院 一种氮化物单晶生长装置
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WO2019038892A1 (ja) 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
WO2019039189A1 (ja) * 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
JP6851486B2 (ja) * 2017-08-24 2021-03-31 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
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WO2019039208A1 (ja) * 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
CN111052413B (zh) * 2017-08-24 2023-08-15 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
JP6851485B2 (ja) * 2017-08-24 2021-03-31 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
JP7051094B2 (ja) * 2018-05-01 2022-04-11 国立大学法人東北大学 窒化アルミニウム結晶の製造方法
CN109706524A (zh) * 2019-03-07 2019-05-03 中国电子科技集团公司第四十六研究所 一种降低氮化镓单晶氧原子浓度的方法
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TW200515488A (en) 2005-05-01
EP1538241A3 (en) 2005-06-22
KR101075931B1 (ko) 2011-10-21
CN1612295A (zh) 2005-05-04
KR101117364B1 (ko) 2012-03-07
KR20050041994A (ko) 2005-05-04
KR20110043560A (ko) 2011-04-27
KR101187999B1 (ko) 2012-10-08
EP1538241A2 (en) 2005-06-08
EP1942211A1 (en) 2008-07-09
JP2005154254A (ja) 2005-06-16
JP4534631B2 (ja) 2010-09-01
EP1538241B1 (en) 2008-12-17
TWI399796B (zh) 2013-06-21
EP1942211B1 (en) 2011-09-14
KR20110043563A (ko) 2011-04-27
US20050098090A1 (en) 2005-05-12
KR20110043562A (ko) 2011-04-27
KR20110043561A (ko) 2011-04-27
DE602004018452D1 (de) 2009-01-29
KR101122327B1 (ko) 2012-03-23

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