DE602004018452D1 - Kristall eines Nitrids der Gruppe III, Verfahren zur dessen Herstellung und Vorrichtung zur Herstellung eines Kristalls eines Nitrids der Gruppe III - Google Patents

Kristall eines Nitrids der Gruppe III, Verfahren zur dessen Herstellung und Vorrichtung zur Herstellung eines Kristalls eines Nitrids der Gruppe III

Info

Publication number
DE602004018452D1
DE602004018452D1 DE602004018452T DE602004018452T DE602004018452D1 DE 602004018452 D1 DE602004018452 D1 DE 602004018452D1 DE 602004018452 T DE602004018452 T DE 602004018452T DE 602004018452 T DE602004018452 T DE 602004018452T DE 602004018452 D1 DE602004018452 D1 DE 602004018452D1
Authority
DE
Germany
Prior art keywords
producing
group iii
iii nitride
nitride crystal
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004018452T
Other languages
German (de)
English (en)
Inventor
Ryu Hirota
Seiji Nakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602004018452D1 publication Critical patent/DE602004018452D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602004018452T 2003-10-31 2004-10-01 Kristall eines Nitrids der Gruppe III, Verfahren zur dessen Herstellung und Vorrichtung zur Herstellung eines Kristalls eines Nitrids der Gruppe III Expired - Lifetime DE602004018452D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003373025 2003-10-31
JP2004195666A JP4534631B2 (ja) 2003-10-31 2004-07-01 Ｉｉｉ族窒化物結晶の製造方法

Publications (1)

Publication Number Publication Date
DE602004018452D1 true DE602004018452D1 (de) 2009-01-29

Family

ID=34467811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018452T Expired - Lifetime DE602004018452D1 (de) 2003-10-31 2004-10-01 Kristall eines Nitrids der Gruppe III, Verfahren zur dessen Herstellung und Vorrichtung zur Herstellung eines Kristalls eines Nitrids der Gruppe III

Country Status (7)

Country Link
US (1) US20050098090A1 (enExample)
EP (2) EP1538241B1 (enExample)
JP (1) JP4534631B2 (enExample)
KR (5) KR20050041994A (enExample)
CN (1) CN100550303C (enExample)
DE (1) DE602004018452D1 (enExample)
TW (1) TWI399796B (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298269A (ja) * 2004-04-12 2005-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
EP1930294A4 (en) * 2005-08-24 2012-12-26 Mitsubishi Chem Corp METHOD FOR PRODUCING GROUP 13 METAL NITRIDE CRYSTAL, METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SOLUTION AND MELT USED THEREOF
JP4788524B2 (ja) * 2005-08-24 2011-10-05 三菱化学株式会社 第１３族金属窒化物結晶の製造方法およびこれらの製造方法に用いる溶液と融液
EP1775356A3 (en) 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4863264B2 (ja) * 2006-03-17 2012-01-25 豊田合成株式会社 半導体結晶の製造方法
WO2007057892A2 (en) * 2005-11-17 2007-05-24 Mosaic Crystals Ltd. Gan crystal sheet
WO2007108338A1 (ja) 2006-03-23 2007-09-27 Ngk Insulators, Ltd. 窒化物単結晶の製造方法および装置
CN101405438B (zh) 2006-03-23 2012-06-27 日本碍子株式会社 氮化物单晶的制造装置
JP5187848B2 (ja) 2006-03-23 2013-04-24 日本碍子株式会社 単結晶の製造方法
JP2007254201A (ja) * 2006-03-23 2007-10-04 Ngk Insulators Ltd 単結晶の製造方法
JP4827107B2 (ja) 2006-03-24 2011-11-30 日本碍子株式会社 窒化物単結晶の製造方法
JP4936310B2 (ja) * 2006-04-07 2012-05-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造装置
JP2007284267A (ja) * 2006-04-13 2007-11-01 Sumitomo Electric Ind Ltd ＧａＮ結晶の製造方法
JP4720672B2 (ja) * 2006-08-14 2011-07-13 住友金属工業株式会社 窒化アルミニウム単結晶の製造方法
JPWO2008117571A1 (ja) * 2007-03-26 2010-07-15 日本碍子株式会社 窒化物単結晶の製造方法
JP5235864B2 (ja) 2007-03-27 2013-07-10 日本碍子株式会社 窒化物単結晶の製造方法
JP4881496B2 (ja) * 2007-04-24 2012-02-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
US8361222B2 (en) 2007-04-24 2013-01-29 Toyoda Gosei Co., Ltd. Method for producing group III nitride-based compound semiconductor
US9281438B2 (en) * 2007-09-28 2016-03-08 Ricoh Company, Ltd. Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal
JP4941448B2 (ja) * 2007-10-26 2012-05-30 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置
JP2009114035A (ja) * 2007-11-08 2009-05-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体製造装置および製造方法
JP5560528B2 (ja) * 2008-01-28 2014-07-30 住友電気工業株式会社 Ｉｉｉ族窒化物単結晶インゴットの製造方法、及びｉｉｉ族窒化物単結晶基板の製造方法
JP5229792B2 (ja) * 2008-03-25 2013-07-03 国立大学法人大阪大学 Ｉｉｉ族元素窒化物結晶の製造方法およびそれにより得られるｉｉｉ族元素窒化物結晶
JP4886722B2 (ja) * 2008-03-25 2012-02-29 日本碍子株式会社 窒化物単結晶の製造方法
JP5056688B2 (ja) * 2008-09-15 2012-10-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
JP5310257B2 (ja) * 2009-05-21 2013-10-09 株式会社リコー 窒化物結晶製造方法
JP2010077022A (ja) * 2009-11-30 2010-04-08 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
JP5729182B2 (ja) 2010-08-31 2015-06-03 株式会社リコー ｎ型ＩＩＩ族窒化物単結晶の製造方法、ｎ型ＩＩＩ族窒化物単結晶および結晶基板
CN102618920A (zh) * 2012-04-25 2012-08-01 浙江华友电子有限公司 一种单晶炉熔料过程中的热能控制方法
JP5522204B2 (ja) * 2012-06-14 2014-06-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
CN103603031A (zh) * 2013-12-06 2014-02-26 北京大学东莞光电研究院 一种通过调控釜体内部流场制备高质量单晶体材料的方法
CN106460228B (zh) * 2014-03-03 2019-04-26 国立大学法人大阪大学 Iii族氮化物结晶的制造方法及iii族氮化物结晶制造装置
JP6534030B2 (ja) * 2014-08-28 2019-06-26 国立大学法人名古屋大学 ＡｌＮ単結晶の作製方法
CN104878451B (zh) * 2015-06-16 2017-07-28 北京大学东莞光电研究院 一种氮化物单晶生长装置
CN111052415B (zh) 2017-08-24 2023-02-28 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
WO2019038892A1 (ja) 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
WO2019039189A1 (ja) * 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
JP6851486B2 (ja) * 2017-08-24 2021-03-31 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
US11309455B2 (en) 2017-08-24 2022-04-19 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
WO2019039208A1 (ja) * 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
CN111052413B (zh) * 2017-08-24 2023-08-15 日本碍子株式会社 13族元素氮化物层、自立基板以及功能元件
JP6851485B2 (ja) * 2017-08-24 2021-03-31 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
JP7051094B2 (ja) * 2018-05-01 2022-04-11 国立大学法人東北大学 窒化アルミニウム結晶の製造方法
CN109706524A (zh) * 2019-03-07 2019-05-03 中国电子科技集团公司第四十六研究所 一种降低氮化镓单晶氧原子浓度的方法
JP7063293B2 (ja) * 2019-03-18 2022-05-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US11280024B2 (en) * 2019-03-18 2022-03-22 Toyoda Gosei Co., Ltd. Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere
JP7147644B2 (ja) * 2019-03-18 2022-10-05 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
JPH07277897A (ja) * 1994-04-04 1995-10-24 Katsutoshi Yoneya 窒化アルミニウム単結晶の合成方法
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
TW428331B (en) * 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP4011828B2 (ja) 1999-06-09 2007-11-21 株式会社リコー Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法
JP3929657B2 (ja) 1999-09-29 2007-06-13 株式会社リコー 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
JP4094780B2 (ja) 1999-08-24 2008-06-04 株式会社リコー 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置
JP2001128587A (ja) 1999-11-05 2001-05-15 Kochi Prefecture 付着性水産生物飼育装置およびこれを用いた飼育方法
JP2001338887A (ja) * 2000-05-26 2001-12-07 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族窒化物系半導体の成長方法及び成長装置
US20020148402A1 (en) * 2001-04-13 2002-10-17 Sindo Kou Growing of homogeneous crystals by bottom solid feeding
US7001457B2 (en) * 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2003137698A (ja) * 2001-10-26 2003-05-14 Ulvac Japan Ltd Ｉｉｉ−ｖ族半導体材料
US6949140B2 (en) * 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7097707B2 (en) * 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP4216612B2 (ja) * 2003-01-29 2009-01-28 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP4248276B2 (ja) * 2003-03-17 2009-04-02 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法

Also Published As

Publication number Publication date
TW200515488A (en) 2005-05-01
EP1538241A3 (en) 2005-06-22
KR101075931B1 (ko) 2011-10-21
CN1612295A (zh) 2005-05-04
KR101117364B1 (ko) 2012-03-07
KR20050041994A (ko) 2005-05-04
CN100550303C (zh) 2009-10-14
KR20110043560A (ko) 2011-04-27
KR101187999B1 (ko) 2012-10-08
EP1538241A2 (en) 2005-06-08
EP1942211A1 (en) 2008-07-09
JP2005154254A (ja) 2005-06-16
JP4534631B2 (ja) 2010-09-01
EP1538241B1 (en) 2008-12-17
TWI399796B (zh) 2013-06-21
EP1942211B1 (en) 2011-09-14
KR20110043563A (ko) 2011-04-27
US20050098090A1 (en) 2005-05-12
KR20110043562A (ko) 2011-04-27
KR20110043561A (ko) 2011-04-27
KR101122327B1 (ko) 2012-03-23

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