CN100423276C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN100423276C
CN100423276C CNB2004100072063A CN200410007206A CN100423276C CN 100423276 C CN100423276 C CN 100423276C CN B2004100072063 A CNB2004100072063 A CN B2004100072063A CN 200410007206 A CN200410007206 A CN 200410007206A CN 100423276 C CN100423276 C CN 100423276C
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optical semiconductor
semiconductor device
coating layer
sealing resin
semiconductor
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CN1532938A (zh
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龟山工次郎
三田清志
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Northeast Sanyo Semi-Conductive Co Ltd
Sanyo Electric Co Ltd
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Abstract

一种半导体装置及其制造方法，其为薄型及小型，且机械强度及耐湿性优异。半导体装置(10A)由密封树脂(13)密封具有受光部或发光部的光半导体元件(14)，形成包覆光半导体元件(14)的表面的包覆层(12)由密封树脂(13)的表面露出的结构。因此，和利用透明树脂密封整体的现有例比较，可以形成薄的密封树脂(13)，可以使装置整体的厚度变薄。而且使用混入了填料的密封树脂，构成半导体装置(10)。由此可以形成具有优异的机械强度和耐湿性的半导体装置。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种内装有受光元件或发光元件的半导体装置。
背景技术
参照图29，说明现有型号的光半导体装置100的结构(例如参照专利文献1)。图29(A)是半导体装置100的平面图，图29(B)是半导体装置100的剖面图。
参照图29(A)和图29(B)，光半导体元件103固定在由铜等导电部件构成的着陆层(ランド)102上。在此，光半导体元件103可以采用CCD(chargedcoupled device电荷耦合装置)图像传感器等受光元件或LED(light emittingdiode)等发光元件形成于表面的半导体元件。靠近着陆层102，设有多个引线101，光半导体元件103的周围设有的电极和引线101通过金属细线104进行电连接。
透明树脂105密封光半导体元件103、着陆层102、金属细线104和引线101。透明树脂105由光学透明的热硬性树脂或热塑性树脂构成。因而光半导体元件103通过包覆其上部的透明树脂105，和外部进行光信号的输入输出。
专利文献1：专利文献特开平5-102449号公报(第三页、第一图)
但是，现有型号的光半导体装置100中所用的透明树脂105为了保持其透明度没有添加填充物。为此光半导体元件103产生的热在放热性方面存在问题，还存在由于使用状态下的温度变化，在透明树脂105上出现龟裂的问题。而且透明树脂105在耐湿性、机械强度以及和导电部件的粘附性上也存在问题。这也导致光半导体装置100的可靠性降低。
为了防止进行树脂密封的模制模型和透明树脂105的过度粘附，在透明树脂105中混入了离型剂等添加物。由于这些添加物的存在使透明树脂105的透明度存在不充分的问题。而且因为透明树脂105本身也是树脂，因而和玻璃等比较透明度差。因此光半导体元件103为CCD时，从外部入射的光由透明树脂105衰减反射，存在不能充分发挥CCD的性能的问题。
透明树脂105形成得很厚，不仅在光半导体元件103的表面，在金属细线104的顶部也包覆。为此光半导体元件103整体的厚度增加，限制了小型化和薄型化。
本发明是鉴于上述问题而开发的，其目的在于提供一种耐湿性和机械强度优异而且薄型的光半导体装置及其制造方法。
本发明的半导体装置是一种包含受光部或发光部的光半导体元件由密封树脂密封的半导体装置，其特征在于，包覆所述光半导体元件表面的包覆层从所述密封树脂的表面露出。
本发明的半导体装置的特征在于，包括具有受光部或发光部的光半导体元件、包覆所述光半导体元件表面的包覆层、固定所述光半导体元件的着陆层、通过金属细线和所述光半导体元件进行电连接并形成外部电极的引线、密封所述光半导体元件、所述金属细线、所述着陆层和所述引线的密封树脂，所述包覆层从所述密封树脂露出。
本发明的半导体装置的特征在于，包括具有受光部或发光部的光半导体元件、包覆所述光半导体元件表面的包覆层、在表面形成导电路而且装载所述光半导体元件的安装衬底、使所述光半导体元件和所述导电路进行电连接的金属细线、密封所述光半导体元件和所述金属细线的密封树脂，所述包覆层从所述密封树脂露出。
本发明的半导体装置的特征在于，包括具有受光部或发光部的光半导体元件、包覆所述光半导体元件表面的包覆层、利用分离槽分离而且上部固定有所述光半导体元件的导电图案、使所述导电图案的背面露出来包覆所述光半导体元件和所述导电图案并填充所述分离槽的密封树脂，所述包覆层由所述密封树脂露出。
本发明的半导体装置的特征在于，包括具有受光部或发光部的光半导体元件、设置在所述光半导体元件的下方而且和所述光半导体元件通过金属细线连接的外部电极、由透明材料构成的包覆层设置在上部而且内部收纳所述光半导体元件和所述金属细线的框体、填充在所述框体的内部和所述光半导体元件之间的间隙的透明树脂。
本发明的半导体装置的制造方法包括用密封树脂密封具有受光部或发光部的光半导体元件的工序，其特征在于，包覆所述光半导体元件的表面的包覆层的上面用薄片保护，然后通过密封所述密封树脂，使所述包覆层由所述密封树脂露出。
本发明的半导体装置的制造方法的特征在于，包含：加工导电部件构成的衬底、在所述衬底上设置着陆层和引线的工序，将所述衬底的下面粘贴在第一薄片的工序，由包覆层覆盖光半导体元件的表面的工序，将所述光半导体元件固定在所述着陆层的工序，用第二薄片保护所述包覆层的上面的工序，利用密封树脂密封所述衬底的所述着陆层、所述引线和所述光半导体元件的工序。
本发明的半导体装置的制造方法的特征在于，包含：通过在导电箔的除形成导电图案的区域之外的区域形成分离槽形成导电图案的工序，由包覆层覆盖光半导体元件的表面的工序，将所述光半导体元件固定在所述导电图案上的工序，用薄片保护所述包覆层的上面的工序，包覆所述光半导体元件并填充在所述分离槽中而形成密封树脂的工序，使所述各导电图案电分离的工序。
本发明的半导体装置的制造方法的特征在于，包含：准备由透明材料构成的包覆层设在其上部的框体的工序，在光半导体元件的背面形成外部电极、用金属细线将所述光半导体元件和所述外部电极进行电连接的工序，通过用透明树脂密封所述光半导体元件和所述金属细线使所述透明树脂的外形做成符合所述框体内部形状的工序，使所述透明树脂嵌合在所述框体的内部的工序。
本发明的半导体装置的特征在于，包括具有受光部或发光部的光半导体元件、包覆所述光半导体元件的表面的包覆层、和所述光半导体元件电连接的半导体元件、和所述半导体元件电连接并和外部进行电信号的输入输出的外部电极、密封所述光半导体元件和所述半导体元件的密封树脂，所述包覆层由所述密封树脂露出。
本发明的半导体装置包括半导体元件、密封所述半导体元件的密封材料、构成和所述半导体元件进行电连接而且从所述密封材料露出的外部电极的导电部件，其特征在于，所述半导体元件具有半导体衬底、设置在所述半导体衬底的表面上的电路部、设置在所述半导体衬底的周边部的凹部、与所述电路部连接并在所述凹部构成电极的金属配线。
本发明的半导体装置的制造方法的特征在于，包括：在晶片表面上形成多个电路部的工序；将所述各电路部的周边部部分切除来设置凹部的工序，形成金属配线，以在所述凹部构成和所述电路部进行电连接的电极的工序；在所述凹部的位置分割所述晶片，从而分割成各半导体元件的工序；使所述电极和其他的导电部件进行电连接的工序；密封所述半导体元件的工序。
附图说明
图1是说明本发明的半导体装置的立体图(A)、背面图(B)；
图2是说明本发明的半导体装置的剖面图(A)、剖面图(B)、剖面图(C)；
图3是说明本发明的半导体装置的剖面图(A)、剖面图(B)、剖面图(C)；
图4是说明本发明的半导体装置的制造方法的平面图；
图5是说明本发明的半导体装置的制造方法的平面图(A)、剖面图(B)；
图6是说明本发明的半导体装置的制造方法的平面图(A)、剖面图(B)；
图7是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)；
图8是说明本发明的半导体装置的立体图(A)、背面图(B)；
图9是说明本发明的半导体装置的剖面图(A)、剖面图(B)、剖面图(C)；
图10是说明本发明的半导体装置的制造方法的剖面图；
图11是说明本发明的半导体装置的剖面图(A)、剖面图(B)；
图12是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)；
图13是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)；
图14是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)；
图15是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)；
图16是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)、剖面图(C)；
图17是说明本发明的半导体装置的立体图(A)、剖面图(B)、剖面图(C)；
图18是说明本发明的半导体装置的剖面图(A)、剖面图(B)；
图19是说明本发明的半导体装置的制造方法的平面图(A)、剖面图(B)；
图20是说明本发明的半导体装置的制造方法的剖面图(A)、剖面图(B)、剖面图(C)、剖面图(D)；
图21是说明内装于本发明的半导体装置的光半导体元件的剖面图(A)、剖面图(B)、剖面图(C)；
图22是说明内装于本发明的半导体装置的光半导体元件的制造方法的立体图(A)、剖面图(B)、剖面图(C)、剖面图(D)；
图23是说明内装于本发明的半导体装置的光半导体元件的制造方法的剖面图；
图24是说明内装于本发明的半导体装置的光半导体元件的制造方法的剖面图；
图25是说明内装于本发明的半导体装置的光半导体元件的制造方法的剖面图；
图26是说明本发明的半导体装置的剖面图(A)、剖面图(B)；
图27是说明本发明的半导体装置的剖面图；
图28是说明本发明的半导体装置的剖面图；
图29是说明现有半导体装置的平面图(A)、剖面图(B)。
具体实施方式
实施例1
参照图1到图7，说明本实施例的半导体装置10A的构成和制造方法。首先参照图1到图3，说明光半导体装置10A的结构。图1(A)是光半导体装置10A的立体图，图1(B)是其背面图。图2(A)、(B)和图3(A)、(B)是图1(A)的X-X线剖面图。
光半导体装置10A中具有受光部或发光部的光半导体元件14由密封树脂13密封，形成包覆光半导体元件14的表面的包覆层12由密封树脂13的表面露出的结构。更详细地说，本实施例的光半导体装置10A包括：具有受光部或发光部的光半导体元件14，包覆光半导体元件14表面的包覆层12，固定光半导体元件14的着陆层16，介由金属细线15和光半导体元件14电连接并形成外部电极的引线11，密封光半导体元件14、金属细线15、着陆层16和引线11的密封树脂13，形成包覆层12由密封树脂13露出的结构。下面说明这种结构。
参照图1(A)，包覆层12形成由密封树脂13的表面露出的结构。这里在光半导体装置10A的中央部附近配置光半导体元件14，包覆其表面的包覆层12由密封树脂13露出。包覆层12的材料使用相对输入光半导体元件14的光或由光半导体元件14输出的光透明的物质。例如若光半导体元件14是感知可视光线的元件，则相对可视光线具有透明性的材料就可以作为包覆层使用。具体地说，可以将玻璃或聚丙烯板等作为包覆层12使用。而且光半导体元件14是CCD图像传感器等摄像元件时，可添加滤光器等。
参照图1(B)在光半导体装置10A的背面的周边部位上，部分露出的引线11形成外部电极。也就是在光半导体装置10A的表面上露出包覆层12，在背面露出由引线11构成的外部电极端子。
参照图2(A)，光半导体元件14固定在着陆层16上。光半导体元件14和引线11通过金属细线15电连接。在此，光半导体元件14可以采用受光元件或发光元件。作为受光元件可以将CCD(电荷耦合装置)图像传感器或CMOS(Complemehtary Metal Oxide Semiconductor)图像传感器等固体摄像元件、或光电二极管或光电晶体管等光敏器件用作光半导体元14。作为发光元件可以将发光二极管或半导体激光器作为光半导体元件14使用。而且也可以取代光半导体元件14，使用MEMS(Micro Electro Mechanical System)。
凹部14A是使光半导体元件14的周边部同样凹入而成的区域，其表面上形成由镀膜等构成的金属配线14B。凹部14A的表面形成由金属配线14B构成的焊盘，该焊盘上连接金属细线15。下面说明设置凹部14A的优点。本发明中，包覆光半导体元件14的包覆层12由密封树脂13的表面露出。因此，由光半导体元件14的上面到密封树脂13的表面的距离与包覆层12的厚度(d1)相等。由此，在金属细线15的凸起的高度(d2)比包覆层12的厚度(d1)高时存在如何确保d2高度的问题。在此，通过设置上述凹部14A，在该凹部14A上引线接合金属细线15，解决了上述问题。也就是，包覆层12的厚度(d1)和凹部14A的深度相加的长度比金属细线15的凸起的高度(d2)设定得长，由此确保了金属细线15的形成区域。另外在与金属细线15的凸起的高度(d2)相比，包覆层12的厚度(d1)厚时，也可以形成省去凹部14A的结构。
也可以将包覆层12的侧面做成倾斜的结构，这时利用锚固效应可以提高包覆层12和密封树脂13的粘附。
着陆层16考虑焊剂的粘付性、接合性、镀覆性，选择其材料。该材料由以Cu为主材料的金属、Al为主材料的金属或Fe-Ni等合金构成。在此，着陆层16配置在光半导体装置10A的中央部，其表面介由粘接剂，固定有光半导体元件14。并且着陆层16的背面由密封树脂13包覆，从而提高了装置的耐湿性。另外也可以使着陆层16的背面由密封树脂13露出。由此，可以提高光半导体元件14发出的热的散热性能。
引线11可包围着陆层16设置多个，各自由着陆层16的近旁至光半导体装置10A的周边部位延伸设置。接近着陆层16侧的引线11的端部介由金属细线15和光半导体元件14进行电连接。引线11的另一端附近的背面由密封树脂13露出，形成外部电极。在此，引线11成形为鸥翼(ガルウイング)形状。
密封树脂13露出包覆层12的表面，密封着陆层16、引线11、金属细线15、光半导体元件14和包覆层12。另外密封树脂13为了提高机械强度和耐湿性，混入无机填充物而具有遮光性。无机填充物例如可以采用铝化合物、钙化合物、钾化合物、镁化合物以及硅化合物。另外，用于密封树脂13的树脂可以全部采用热塑性树脂或热硬性树脂两种。本发明中可以使用的热塑性树脂例如有：ABS树脂、聚丙烯、聚乙烯、聚苯乙烯、聚丙烯酸、聚对苯二甲酸乙二醇酯、聚苯醚、尼龙、聚酰胺、聚碳酸酯、聚甲醛、聚对苯二甲酸丁二醇酯、聚二苯硫醚、聚醚醚酮、液晶聚合物、氟树脂、氨基甲酸乙酯树脂以及弹性体。本发明可使用的热硬性树脂例如有：尿素、苯酚、三聚氰胺、呋喃、醇酸、不饱和聚酯、邻苯二甲酸二烯丙基酯、环氧化物、硅树脂以及聚氨基甲酸酯。
参照图2(B)，说明另一形态的半导体装置10A的结构。同图所示的光半导体装置10A的基本结构和如上所述的相同，不同点在于具有半导体元件17，下面详细说明其不同点。
半导体元件17固定在着陆层16上，在该半导体元件17的上部还设置着光半导体元件14。并且半导体元件17和引线11介由金属细线15进行电连接。因此，半导体元件17和光半导体元件14可通过金属细线15和引线11进行电连接。半导体元件17可以使用进行光半导体元件14的控制或半导体元件17输出的电信号的处理的元件。
光半导体元件14为CCD图像传感器或CMOS图像传感器的场合，可以在半导体元件17上形成用于驱动CCD的驱动电路或A/D转换器、信号处理电路等。而且也可以使具有图像压缩功能或色素补偿功能的电路形成于半导体元件17上。另外，在光半导体元件14为发光二极管等发光元件时，控制该发光元件的电路可以形成在半导体元件17上。将这样的半导体元件17与光半导体元件14一起内装在半导体装置10A内，可以提高光半导体装置10A的附加价值。
参照图2(C)，这里，金属细线15连接处的引线11被埋入密封树脂13中，由密封树脂13的侧面导出引线11。参照图3，说明另一形态的光半导体装置10A的结构。同图所示的光半导体装置10A的基本结构和参照图1说明的相同，不同点在于引线11平坦地形成。图3(A)中，只有光半导体元件14装在光半导体装置10A中，图3(B)中除光半导体元件14外，还内装半导体元件14。
参照图3(C)，在此，利用金属细线15连接光半导体元件14和焊盘11A，焊盘11A的背面由密封树脂13的背面露出，形成外部电极。
下面参照图4到图7，说明本实施形态的光半导体装置10A的制造方法。光半导体装置10A采用下述光半导体装置的制造方法制造，该方法包括用密封树脂13密封具有受光部或发光部的光半导体元件14的工序，包覆所述光半导体元件的表面的包覆层的上面用薄片保护，然后用所述密封树脂进行密封，自所述密封树脂露出所述包覆层。更详细地说，光半导体装置10A的制造方法包括：加工导电部件构成的衬底41，在衬底上设置着陆层16和引线11的工序；将衬底41的整个下面粘贴在第一薄片51A上的工序；将表面具有包覆层12的光半导体元件14固定在衬底41的着陆层16上的工序；用第二薄片51B保护包覆层12的上面的工序；利用密封树脂13密封衬底41的着陆层16、引线11和光半导体元件14的工序。下面参照附图详细说明上述工序。
参照图4，首先加工导电部件构成的衬底41，在衬底41上设置着陆层16和引线11。衬底41例如由以厚度约100～250μm的铜为主体的板状体构成。但是也可以使用以Fe-Ni为主体的金属，也可以采用其他金属材料。并且衬底41上矩阵状地形成多个显示点划线所示的一个光半导体装置对应的单元的搭载部42。同图中，设置了4个搭载部，但只要至少设置1个即可。该搭载部42由相对纸面沿左右方向延伸的一对第一连接条体43和相对纸面沿上下方向延伸的一对第二连接条体44包围着。利用该第一和第二连接条体43、44将多个搭载部42设置在1张衬底41上。
图5(A)是图4显示的搭载部42的放大图。如图所示，搭载部42主要包括着陆层16和支承着陆层16的提升引线16A和多个引线11。这里，引线11一端位于着陆层16的4侧边的附近，另一端包围该4侧边，向第一和第二连接条体43、44延伸。
下面参照图5(B)将衬底41整个下面贴在第一薄片51A上。第一薄片51A由相对于机械力和热伸缩性低的材料构成。例如本实施例中使用PET(聚对苯二甲酸乙二醇酯)材料，但只要满足上述条件也可以使用其他材料。
然后，参照图6，将表面具有包覆层12的光半导体元件14固定在衬底41的着陆层16上。图6(A)是本工序中1个搭载部42的平面图，图6(B)是其剖面图。
表面上设置有包覆层12的光半导体元件14介由粘接剂固定在着陆层16的上部。光半导体元件14和引线11通过金属细线15电连接。光半导体元件14的周边部位上设置有凹部14A，形成将金属细线15连接在该凹部14A上的焊盘。
下面参照图7，在用第二薄片51B保护包覆层12的上面之后，利用密封树脂13密封衬底41的着陆层16，引线11和光半导体元件14。图7(A)是说明本工序的剖面图，图7(B)是说明另一形态的本工序的剖面图。
参照图7(A)，在本工序中，使用上模50A和下模50B构成的模制模型进行树脂密封。密封方法可以采用使用热硬性树脂的传递模模制或使用热塑性树脂的注射模制等。粘贴在衬底41下面的第一薄片51A与下模50B接触。另外为了维持第一薄片51A的平坦性，也可以利用下模50B设置的吸引装置，固定第一薄片51A。
第二薄片51B具有保护包覆层12的上面不被密封树脂包覆的作用。这里上模50A的内壁几乎都被第二薄片51B的上面包覆。而且，第二薄片51B的下面与包覆层12的上面接触。该状态下，通过从设置在金属模型上的浇口封入密封树脂13，进行密封工序。密封工序结束之后，第一薄片51A和第二薄片51B剥落。
第二薄片51B可以使用和上述第一薄片相同的物质，但只要是满足耐热性等也可以使用其它材料。另外在和包覆层12接触的第二薄片51B的面上涂敷粘接剂，则可以提高第二薄片51B和包覆层12的粘接性，可以防止密封树脂13侵入两者的界面。另外，为了提高上模50A的内壁和第二薄片51B的粘接力，可在上模50A设置吸引装置，利用该吸引装置，保持第二薄片51B。
参照图7(B)，说明另一形态的密封方法。这里只在包覆层12的上面对应的部位设置有第二薄片51B。因此，当在树脂密封工序结束之后，剥离第二薄片51B时，在设置第二薄片51B的部位形成凹状。
在上述说明中，对每个搭载部42，用单独的型腔进行树脂密封，但也可以用1个型腔对多个搭载部42进行树脂密封，然后利用切割等分割成各个搭载部42。这样的工序通常称作MAP(Multi Area Package)。
上述工序之后，经过使树脂硬化的模制固化工序、用镀膜包覆露出外部的引线11的镀敷工序、分离各搭载部42的切割工序、测定电特性以及判定良否的工序，制造光半导体装置10A。
参照图1，本发明的特征在于包覆光半导体元件14的上面的包覆层12由密封树脂13露出。换言之，介由包覆层12，光半导体元件14由密封树脂13露出。因此，和通过透明树脂使整体密封的现有例相比较，密封树脂13可以薄薄地形成，可以使装置整体厚度变薄。而且由于介由包覆层12光半导体元件14露出到外部，故在光半导体元件14为受光元件时，可以抑制由外部输入的光信号的衰减而受光。而在光半导体元件14为发光元件时，可以抑制发出的光信号的衰减。
另外，本发明的特征在于使用混入了填料的密封树脂构成光半导体装置10。由此可以构成机械强度和耐湿性优异的光半导体装置。
实施例2
参照图8到图10，说明本实施例的半导体装置10B的结构和制造方法。首先参照图8及图9，说明光半导体装置10B的结构。
图8(A)是光半导体装置10B的立体图，图8(B)是其背面图。由同图可知，光半导体装置10B的基本结构和实施例1说明的光半导体装置10A相同，不同点在于光半导体装置10B的背面露出包覆层12。具体地说，从引线11露出构成外部电极的面的密封树脂13露出包覆层12。
参照图9，对光半导体装置10B的剖面结构进行说明。图9(A)和图9(B)是图8(A)的X-X线的剖面图。
参照图9(A)，光半导体元件14固定在着陆层16的下面。光半导体元件14和引线11由金属细线15连接，这里，金属细线15的一端连接在引线11的下面。金属细线15的另一端连接在设于半导体元件14的周围的凹部14A的金属配线14B上。
参照图9(B)，这里，在光半导体元件14之外，半导体元件14也装在光半导体装置10B内。在半导体元件17上形成的电路的种类和内装半导体元件17的效果和实施例1相同。
参照图9(C)，说明上述光半导体装置10B的安装结构。光半导体装置10B介由焊锡等焊剂，固定在衬底52上。具体地说，衬底52上设置的导电路和引线11的露出部由焊剂连接。另外为了可以使光半导体元件14和外部进行光的输出输入，衬底52上设置着与光半导体元件14的位置和大小对应的开口部53。
参照图10，说明上述光半导体装置10B的制造方法。这里，对与实施例1说明的光半导体装置10A的制造方法重复的工序，省略说明。具体地说，在导电性的衬底41上形成着陆层16和引线11的工序、在衬底41上粘贴第一薄片的工序、光半导体元件14的固定和金属细线15的引线接合的工序和实施例1基本相同。另外，在此，在进行光半导体元件14的固定和引线接合之后，粘贴薄片51。实施例1中，是使用第一薄片51A和第二薄片51B两张薄片进行模制密封的工序，但这里使用一张薄片51，进行模制密封的工序。
参照图10，说明模制密封的工序。露出外部的部分的引线11的下面粘贴在薄片51上。并且薄片51由下模50B支承。而且包覆半导体元件14的包覆层12也粘贴在薄片51上。因而本工序在粘贴有形成引线11和着陆层16的衬底41的薄片51上也粘贴有包覆层12。在该状态下，进行密封树脂13的封入。因此可以实现使用一张薄片的模制密封工序。
在上述工序之后，经过使树脂硬化的模制固化工序、将外部露出的引线11通过镀膜包覆的镀敷工序、分离各搭载部42的切割工序、测定电特性以及判定良否的工序，制造光半导体装置10B。
实施例3
参照图11及图12，说明本实施例的半导体装置10C的结构和制造方法。首先参照图11，说明本实施例的光半导体装置10C的结构。
参照图11，光半导体装置10C包括具有受光部或发光部的光半导体元件14、包覆光半导体元件14的表面的包覆层12、在表面上形成导电路20而且装载光半导体元件14的安装衬底18、将光半导体元件14和导电路20电连接的金属细线15、密封光半导体元件14和金属细线15的密封树脂13，形成包覆层12由密封树脂13露出的结构。
如上所述，本实施例的光半导体装置10C的基本结构和实施例1及2说明的相同，不同点在于使用安装衬底18作为衬底(插入式衬底)。
参照图11(A)，光半导体元件14介由粘接剂，固定在安装衬底18的上面。在安装衬底18的表面上设置构成焊盘等的导电路20，贯通安装衬底18，外部电极19在下面露出。另外也可以设置介由绝缘部件层积的多层配线。
参照图11(B)，这里，在光半导体元件14之外，半导体元件17也装在光半导体装置10C内。
下面参照图12(C)，说明上述光半导体装置10C的制造方法。参照图12(A)，在安装衬底18上固定光半导体元件14，介由金属细线15，使导电路20和光半导体元件14连接。然后将固定有光半导体元件14的安装衬底18设置在下模50B中。薄片51的上面与上模50A的内壁几乎所有区域接触，薄片51B的下面与包覆层12接触。在该状态下，进行密封树脂13的封入。由于安装衬底18与下模50B整个面接触，故使用一张薄片51，进行模制密封工序。
参照图12(B)，这里，使用和包覆层12相同程度大小的薄片51，保护包覆层12。在密封树脂13封入之后，剥离薄片51。因此，露出的包覆层12的上面形成比密封树脂13构成的上面向内侧凹入薄片51厚度的形状。
在上述工序之后，经过使树脂硬化的模制固化工序、测定电特性以及判定良否的工序，制造光半导体装置10C。
实施例4
参照图13到图16，说明本实施例的半导体装置10D的结构和制造方法。首先参照图13，说明本实施例的光半导体装置10D的结构。
参照图13(A)，光半导体装置10D包括具有受光部或发光部的光半导体元件14、包覆光半导体元件14表面的包覆层12、利用分离槽24分离而且光半导体元件14固定在上部的导电图案21、使导电图案21的背面露出而包覆光半导体元件14和导电图案且在分离槽24填充的密封树脂13，形成包覆层12由密封树脂13露出的结构。下面说明这些构成要素。
导电图案21由第一导电图案21A和第二导电图案21B构成。第一导电图案21A形成着陆层形状，其上部安装光半导体元件14。第二导电图案21B设在接近第一导电图案21A的部位，具有焊盘的作用。在第二导电图案21B的背面设有由焊锡等焊剂构成的外部电极23。
第一导电图案21A和第二导电图案21B的侧面形成向内侧弯曲的形状。因此，通过导电图案21弯曲的侧面部和密封树脂13嵌合，使两者的结合力增强。
密封树脂13可以采用与实施例1所述的相同的树脂。这里，形成导电图案21埋入密封树脂13中的结构。因此，光半导体装置10D利用密封树脂13的刚性被整体支承。
对于光半导体元件14、包覆层12、金属细线等其他的构成要素，由于和上述实施例1相同，故省略其说明。
参照图13(B)，这里，除光半导体元件14之外，半导体元件17也装在光半导体装置10D内。
下面参照图14到图16，说明上述光半导体装置10D的制造方法。光半导体装置10D的制造方法由如下工序构成：通过在导电箔40的除形成导电图案21的部位之外的区域形成分离槽24，形成导电图案21的工序；将表面具有包覆层12的光半导体元件14固定在导电图案21上的工序；用薄片51保护包覆层12的上面的工序；为了包覆光半导体元件14填充分离槽24形成密封树脂13的工序；电分离各导电图案21的工序。下面说明这些工序。
参照图14(A)，准备以铜或铝为主成分的导电箔40，设置分离槽24，由此形成导电图案21。具体地说，利用蚀刻用保护层R包覆导电箔40的形成导电图案21部位的表面，进行湿式蚀刻形成分离槽24。由蚀刻构成的分离槽24的侧面弯曲且形成粗糙面，所以和密封树脂13的粘附更坚固。在形成分离槽24后，剥离除去保护层R。在导电图案21的表面形成镀膜。
参照图14(B)，在导电图案21上安装光半导体元件14。这里，将光半导体元件14固定在第一导电图案21A上，利用金属细线15将光半导体元件14和第二导电图案21B电连接。
然后，参照图15，用第二薄片保护包覆层的上面，形成密封树脂，包覆光半导体元件14，并在分离槽24中填充。以下说明本工序。
参照图15(A)，将光半导体元件14固定在表面上的导电箔40装载在下模50B中。薄片51的上面与上模50A的内壁的几乎所有部位接触，薄片51的下面与包覆层12的上面接触。在该状态下形成密封树脂13，包覆光半导体元件14和金属细线15，并填充在分离槽24中。
在图15(B)中，利用和包覆层12相同程度大小的薄片51，保护包覆层12。该方法也可以保护包覆层12的上面。
下面参照图16，说明电分离各导电图案21的工序。
参照图16(A)，将导电箔40从背面整面除去，将各导电图案21电分离。具体地说，通过将导电箔40的背面整面蚀刻，可以电分离各导电图案21。因此，形成填充在分离槽24的密封树脂13由导电图案21露出的结构。在同图中，由背面蚀刻导电箔40到用点划线显示的部位，由此进行本工序。
图16(B)显示通过本工序使各导电图案21电分离的状态。
参照图16(C)，用包覆树脂22包覆背面露出的导电图案21。在包覆树脂22的所希望的位置设置开口部，形成外部电极23。最后将形成矩阵状的各电路装置，通过切割密封树脂，分割成各个光半导体装置10D。
本工序的优点在于包覆密封树脂13之前，形成导电图案21的导电箔40构成支承衬底。本发明中，形成支承衬底的导电箔40为作为电极材料必要的材料。因此，具有可最大限度节省材料进行操作的优点，也可以降低成本。
实施例5
参照图17到图20，说明本实施例的半导体装置10E的结构和制造方法。首先参照图17和图18，说明本实施例的光半导体装置10E的结构。
图17(A)是光半导体装置10E的立体图。图17(B)和图17(C)是其剖面图。参照同图，光半导体装置10E包括具有受光部或发光部的光半导体元件14、设置在光半导体元件的下方且和所述光半导体元件介由金属细线15连接的外部电极、由透明材料构成的包覆层12设置在上部且在内部容纳光半导体元件14和金属细线15的框体、所述框体的内部和所述光半导体元件之间的间隙中填充的透明树脂。下面详细说明各要素。
参照图17(A)和图17(B)，框体25形成光半导体装置10E的外形，其上部设有透明材料构成的包覆层12。框体25的内部形成空洞部。该空洞部的大小在其内装有的光半导体元件14的大小以上。框体25的材料，可以采用和上述密封树脂13材料相同的树脂。也就是可以采用遮光性树脂作为框体25的材料。而且也可以采用陶瓷或金属等作为框体25的材料。
光半导体元件14可以采用与实施例1说明的同样的元件。光半导体元件14和引线11通过金属细线15连接。在此，在半导体元件17的周边部也设置凹部14A，在该凹部14A接合金属细线15。因而可以使透明树脂26的厚度变薄，可实现光半导体装置10E整体的薄型化。
引线11在半导体元件17的下方形成，其表面形成连接金属细线15的焊盘，其背面部分露出，形成外部电极。引线11除去形成外部电极的位置，也可以用包覆树脂22包覆。
透明树脂26填充在框体25的空洞部，将光半导体元件14和金属细线15密封。透明树脂26可以采用具有和包覆层12相同以上透明度的树脂。
参照图17(C)，在此，在光半导体元件14的下方装载半导体元件17。半导体元件17可以采用与所述的实施例1相同的元件。
参照图18，说明另一形态的光半导体装置10E的结构。参照图18(A)，同图显示的光半导体装置10E的基本结构和图17所示的相同，不同点在于具有安装衬底18。具体地说，在安装衬底18的表面上形成导电路20，设置有贯通安装衬底18和导电路20电连接的外部电极19。在此，外部电极19由银或铜等金属构成。参照图18(B)，在光半导体装置10E之外，也可以使半导体元件17装在光半导体装置10E内。
下面参照图19和图20，说明上述光半导体装置10E的制造方法。光半导体装置10E的制造方法由如下工序构成：准备由透明材料构成的包覆层12设置在上部的框体25的工序、在光半导体元件14的背面形成外部电极由金属细线15将光半导体元件14和外部电极电连接的工序、由透明树脂26密封光半导体元件14和金属细线15，将透明树脂26的外形做成符合框体25的内部的形状的工序、使透明树脂26嵌合在框体25内部的工序。下面说明各工序。
首先参照图19，准备由透明材料构成的包覆层12设置在上部的框体25。框体25为好象在内部具有空洞部27的盒的形状，装在其内的光半导体元件14将用于光信号的输入输出的包覆层12设在上部。空洞部27的大小形成比光半导体元件14大一些的空间，确保内装的光半导体元件14和其连接区域。
然后，参照图20(A)，在光半导体元件14的下方设置引线11，引线11的表面和光半导体元件14用金属细线15电连接。金属细线15接合在光半导体元件14的凹部14A，由此可以极大地降低金属细线15的最顶部的高度。
然后，参照图20(B)，用透明树脂26密封光半导体元件14和金属细线15，将透明树脂26的外形做成符合框体25的内部的形状。本工序可以通过使用热硬性树脂的传递模或使用热塑性树脂的注射模进行。如上所述，通过设置凹部14A，使金属细线15的最顶部位置极大地降低。因此，可以使包覆光半导体元件14的表面的透明树脂26变薄。
接着，参照图20(C)，利用粘接剂使透明树脂26嵌合在框体25的内部。由此将光半导体元件14收容在框体25的内部。用于使透明树脂26嵌合在框体25内部的粘接剂使用具有透明性的粘接剂。
最后，参照图20(D)，利用包覆树脂22包覆光半导体装置10E的背面。使用遮光性树脂作为包覆树脂22，可以防止噪音从背面侵入到光半导体装置10E内部。
实施例6
参照图21到图25，对上述各实施例中装在光半导体装置10内的光半导体元件14的结构和制造方法进行说明。首先说明本实施例的光半导体装置10E的结构和制造方法。
首先，参照图21(A)，说明本实施例的光半导体元件14的结构。光半导体元件14在其表面具有受光部或发光部，周边部设有同样凹陷的凹部14A。在元件的表面上设有包覆层12。
作为光半导体元件14的表面形成的受光元件可以采用CCD(chargedCoupled Device)图像传感器或CMOS(Complementary Metal OxideSemiconductor)图像传感器等固体摄像元件或光电二极管或光电晶体管等光敏器件作为光半导体元件14。作为发光元件可以采用发光二极管或半导体激光器作为光半导体元件14。而且也可以取代光半导体元件14使用MEMS(Micro Electro Mechanical System)。
包覆层12的材料可以使用对输入光半导体元件14的光或光半导体元件14输出的光透明的物质。例如若光半导体元件14是感知可视光线的元件，则将相对可视光线具有透明性的材料用作包覆层12。具体地说可以使用玻璃或聚丙烯板作为包覆层12。另外，在光半导体元件14为CCD图像传感器等摄像元件时，附加滤光器。
凹部14A为使光半导体元件14的周边部相同凹陷的区域，其表面形成由镀膜等构成的金属配线14B。该凹部14A的表面形成由金属配线14B构成的焊盘，该焊盘连接金属细线。通过设置凹部14A，相对光半导体元件14可以降低其接合的金属细线15的最顶部的高度。另外，在此，凹部14A的侧面相对光半导体元件14的面方向形成垂直。金属配线14B具有使半导体衬底14C的表面上形成的电路再配线到周边部设置的凹部14A的作用。
参照图21(B)，同图所示的光半导体元件14做成在凹部14A的侧面具有倾斜的形状。由此使角部14D的角度α形成钝角，在利用镀敷法等对金属配线14B制图的工序中，可以利用该角部14D防止发生断线等。
在图21(C)中所示的光半导体元件14中，凹部14A的剖面为曲面。因此，在利用镀敷法等对金属配线14B制图的工序中，可以利用该角部防止发生断线等。
下面参照图22到图25，说明光半导体元件14的制造方法。
参照图22，首先使用切割锯46进行半划片，形成凹部14A。图22(A)是显示本工序概况的立体图，图22(B)、(C)、(D)是使用刀尖形状不同的切割锯46进行半划片的状态的剖面图。
参照图22(A)，在投入本工序的晶片45上，含有受光元件或发光元件的各个电路以矩阵状形成，沿着各电路的边界对应的切割线D进行半划片。
参照图22(B)，在此，使用具有平坦刀尖的切割锯46进行半划片。因此，凹部14A的剖面形状如同图右侧所示，侧面形成直角。
参照图22(C)，在此，使用刀尖的两端具有倾斜部的切割锯46进行半划片。因此，凹部14A的剖面形状如同图右侧显示，形成曲线。
然后，参照图23，将与晶片45的表面上形成的电路电连接的金属配线14B设置在凹部14A。金属配线14B的材料为Ag、Au、Pt或Pd等，利用蒸镀、喷溅、CVD等低真空、或高真空下的包覆、电镀、非电解镀敷或烧结等进行包覆。
接着，参照图24，为了保护晶片45表面上形成的各电路，将包覆层12粘贴在各电路的上部。加工包覆层12的金属配线14B对应的部位以不与金属配线14B干扰。包覆层12使用环氧树脂等粘接剂进行粘贴。
然后，参照图25使用切割锯47，对进行整体划片，分离各光半导体元件14。利用切割锯47切断凹部14A的中央部的、晶片45的剩余的厚度部分和金属配线14B。在此使用的切割锯47的宽度比前述的切割锯46窄。通过上述工序制造本实施例的光半导体元件14。
实施例7
参照图26和图27，对本实施例的光半导体装置10F的结构和制造方法进行说明。光半导体装置10F包括具有受光部或发光部的光半导体元件14、包覆光半导体元件14的表面的包覆层12、和光半导体元件14电连接的半导体元件17、和半导体元件17电连接并与外部进行电信号的输出输入的外部电极、密封光半导体元件14和半导体元件17的密封树脂13，形成包覆层12由密封树脂13露出的结构。外部电极例如可以采用一端由密封树脂17露出的引线等作为外部电极。
如上所述，本实施例的光半导体装置10F的基本结构和实施例1中说明的相同，不同点在于具有和光半导体元件14电连接的半导体元件17。而且介由贯通电极14E进行两者电连接。
参照图26(A)，光半导体元件14具有从其表面到背面贯通形成的贯通电极14E，介由贯通电极14E，和半导体元件17电连接。
贯通电极14E和光半导体元件14的表面上形成的电路电连接，通过在贯通孔中埋入铜等金属而形成。在此，光半导体元件14的表面的中央部附近形成包含受光元件或发光元件的电路，和该电路连接的贯通电极14E在周边部形成。并且在光半导体元件14的背面露出的贯通电极14E上形成补片电极14F。
半导体元件17在其上部固定着光半导体元件14。并且光半导体元件14具有的贯通电极14E对应的位置上设有第一焊盘17A。第一焊盘17A和半导体元件17的表面上形成的电路相连接。和外部进行连接的第二焊盘17B设在半导体元件11表面的周边部。在此，构成外部电极的引线11和第二焊盘17B介由金属细线15电连接。在半导体元件17上构成的电路如实施例1中说明的可以采用对由光半导体元件14得到的信号进行处理等的电路。半导体元件17固定在着陆层16上。
参照图26(B)，在此，引线11和半导体元件17直接连接。引线11的一端由密封树脂13的背面露出，形成外部电极。并且引线11的另一端介由焊锡等焊剂直接连接在半导体元件17的周边部设置的第二焊盘17B上。通过这样的引线11的连接结构使半导体元件17机械性固定在引线11上。由此也可以省略着陆层16，形成整体装置。
参照图27，在此，设置在半导体元件17的周边部的第二焊盘17B连接在衬底52上。具体地说，大小为可以容纳光半导体元件14的大小以上的开口部53设在衬底52上。开口部53的周边部设有第二焊盘17B的位置对应的导电路52A的焊盘部。并且半导体元件17的第二焊盘17B和导电路52A通过焊锡等焊剂连接。半导体元件17和光半导体元件14的连接结构和图26所示的相同。导电路52A也可以贯通衬底52延伸到其相对面。
填充树脂3A填充在光半导体元件14和开口部53的间隙或半导体元件17和光半导体元件14的间隙中。也可以形成填充树脂13A以保护包覆层12的侧面部。密封树脂13用以包覆半导体元件17。
参照图28，说明另一形态的光半导体装置10F的结构。同图所示的光半导体装置10F的基本结构和图26所示的相同，主要差别在于不用引线11，而具有导电图案21。下面以该不同点为中心详细说明光半导体装置10F的结构。
上部装载光半导体元件14的半导体元件17固定在着陆层状的第一导电图案21A上。包围第一导电图案21A形成第二导电图案21B，第一导电图案21A和第二导电图案21B由金属细线15连接。填充有密封树脂31的分离槽24将各导电图案21电分离。
利用密封树脂13密封光半导体元件14、半导体元件17、导电图案21和金属细线15。并且导电图案21的背面由密封树脂13露出。形成外部电极23的位置之外的光半导体装置10F的背面利用包覆树脂22包覆。从形成外部电极23的面的相对面上的密封树脂13露出包覆层12。
上述光半导体装置10F中，利用设在光半导体元件14上的贯通电极14E，将光半导体元件14和半导体元件17电连接，因此和用金属细线连接两者的情况相比较，可以进行高速动作。
上述对本发明的光半导体装置和其制造方法进行了说明，在不脱离本发明的要旨的范围内，可以进行各种变换。具体地说，参照图2等，上述中光半导体元件14和引线11介由金属细线15连接，但也可以通过补片等其他连接装置使两者进行连接。也就是可以使用ILB(Inner Lead Bonding内部引线接合)或TAB(Tape Automated Bonding)连接光半导体元件14和引线11。
本发明具有如下效果。
本发明的半导体装置可以使包覆光半导体元件14上面的包覆层12由密封树脂13露出。因此，和由透明树脂密封整体的现有例相比较可以薄薄地形成密封树脂13。可以使装置整体的厚度变薄。而且由于介由包覆层12，光半导体元件14露出外部，故在光半导体元件14为受光元件的场合可以抑制由外部输入的光信号的衰减来接收光。在光半导体元件14为发光元件的情况下，可以抑制发出的光信号的衰减。
使用混入了填料的遮光性密封树脂构成半导体装置10。由此可以形成机械强度和耐湿性优异的半导体装置。
根据本发明的半导体装置的制造方法，在用薄片51覆盖包覆层12的上部之后，利用密封树脂13进行密封。薄片51通过粘接剂粘贴在包覆层12上。因此，通过模制密封工序可以防止包覆层12的表面上粘附密封树脂13。

Claims (9)

1. 一种半导体装置，半导体元件和具有受光部或发光部的光半导体元件由密封树脂密封，其特征在于，包覆所述光半导体元件表面的包覆层自所述密封树脂的表面露出，由传递模模制形成的所述密封树脂的外面与所述包覆层的露出面位于同一平面上，所述光半导体元件和所述半导体元件经由贯通所述光半导体元件而设置的贯通电极电连接。
2. 如权利要求1所述的半导体装置，其特征在于，所述包覆层由透明的材料构成。
3. 如权利要求1所述的半导体装置，其特征在于，具有和外部进行电信号的输出输入的外部电极，所述外部电极设在与所述包覆层露出的面相对的面上。
4. 如权利要求1所述的半导体装置，其特征在于，具有和外部进行电信号的输出输入的外部电极，所述外部电极设在与所述包覆层露出的面相同的面上。
5. 如权利要求1所述的半导体装置，其特征在于，所述密封树脂为遮光性树脂。
6. 一种半导体装置，其特征在于，包括：光半导体元件，其具有受光部或发光部；包覆层，其包覆所述光半导体元件的表面；半导体元件，其与所述光半导体元件重叠地配置；着陆层，其固定所述半导体元件；引线，其介由金属细线和所述半导体元件电连接并形成外部电极；密封树脂，其密封所述光半导体元件、所述半导体元件、所述金属细线、所述着陆层和所述引线，所述包覆层自所述密封树脂露出，由传递模模制形成的所述密封树脂的外面与所述包覆层的露出面位于同一平面上，所述光半导体元件和所述半导体元件经由贯通所述光半导体元件而设置的贯通电极电连接。
7. 如权利要求6所述的半导体装置，其特征在于，所述外部电极设在和所述包覆层露出的面相对的面上。
8. 如权利要求6所述的半导体装置，其特征在于，所述密封树脂为遮光性树脂。
9. 如权利求6所述的半导体装置，其特征在于，所述包覆层由透明的材料构成。
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