JP5620698B2 - 半導体構成体及び半導体構成体の製造方法 - Google Patents
半導体構成体及び半導体構成体の製造方法 Download PDFInfo
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- JP5620698B2 JP5620698B2 JP2010075099A JP2010075099A JP5620698B2 JP 5620698 B2 JP5620698 B2 JP 5620698B2 JP 2010075099 A JP2010075099 A JP 2010075099A JP 2010075099 A JP2010075099 A JP 2010075099A JP 5620698 B2 JP5620698 B2 JP 5620698B2
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011347 resin Substances 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 35
- 238000007789 sealing Methods 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 22
- 238000009713 electroplating Methods 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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Description
半導体ウエハと、
前記半導体ウエハ上の所定領域を囲むように形成され、導電性材料からなる壁と、
前記半導体ウエハ上の前記所定領域の外部に設けられた複数の配線と、
前記複数の配線上にそれぞれ設けられた複数の外部接続用電極と、
前記壁の外部に充填され、前記配線を封止する封止樹脂と、
前記壁の内部に充填され、前記所定領域を封止する透明樹脂と、
を備え、
前記複数の配線のうち何れかの配線が前記壁の下まで延在しており、その配線上に設けられた外部接続用電極がその配線を介して前記壁と導通することを特徴とする。
前記所定領域には、電子回路が設けられていることが好ましい。
前記壁及び前記外部接続用電極は、同一材料で形成されていることが好ましい。
前記壁及び前記外部接続用電極は、同じ高さに設定されていることが好ましい。
前記壁と前記半導体ウエハとの間には、保護絶縁膜が介在されていることが好ましい。
本発明の半導体構成体の製造方法において、
半導体ウエハ上の所定領域の外部に配置された配線層上に外部接続用電極を形成すると同時に、前記所定領域を囲む壁を形成し、
前記所定領域以外の上部空間を塞ぐ蓋を前記壁の上部に載置し、
前記所定領域を封止する透明樹脂を前記壁の内部に充填し、
前記蓋を除去し、
前記接続パッド及び前記配線を封止する封止樹脂を前記壁の外部に充填し、
前記透明樹脂とともに前記封止樹脂、前記外部接続用電極及び前記壁の上面を切削することを特徴とする。
半導体デバイスウエハ10は、図1に示すように、シリコン等からなる半導体基板(半導体ウエハ)11と、金属等の導電性材料からなる複数の接続パッド12と、酸化シリコンまたは窒化シリコン等の絶縁性材料からなる保護絶縁膜13と、等を備える。
また、保護絶縁膜13には、接続パッド12を露出させる開口13a、電子回路2を露出させる開口13bが設けられている。図1、図2に示すように、開口13aは接続パッド12よりも小さく、開口13bは電子回路2よりも大きい。
めっき層19は電解めっき用シード層16より厚く、例えば1μm〜15μmの厚さが好ましい。配線15における接続パッド12とは反対側の端部のランド上面には、銅等の導電性材料からなる柱状電極21が形成されている。柱状電極21の直径は50〜500μmである。柱状電極21の高さは45〜99μm程度であり、配線15の厚さと合わせて50〜100μm程度である。
次に、図5に示すように、電解めっき用シード層16上の配線層19を形成する領域を除き、配線レジスト17を形成する。
次に、図6に示すように、配線レジスト17が形成されていない部分に、電解めっき用シード層16を陰極とする電解めっきにより配線層19を堆積する。
その後、図7に示すように、配線レジスト17を除去する。
次に、図10に示すように、レジスト20を除去する。
なお、この時、配線層19、柱状電極21、壁層24の表面も電解めっき用シード層16の厚さと同程度にエッチングされるが、配線層19、柱状電極21、壁層24は電解めっき用シード層16と比較して充分に厚いため、影響はない。
次に、透明樹脂26が硬化した後、図17、図18に示すように、蓋25Bを除去する。
2 電子回路
10 半導体デバイスウエハ
11 半導体基板
12 接続パッド
13 保護絶縁膜
13a、13b、14a、14b、20a、20b、201 開口
14、214 絶縁膜
15 配線
16 電解めっき用シード層
17 配線レジスト
19、219 配線層
20 レジスト
21 柱状電極
22 封止樹脂
23 壁
25B 蓋
26 透明樹脂
200 基板
223 半田端子
Claims (6)
- 半導体ウエハと、
前記半導体ウエハ上の所定領域を囲むように形成され、導電性材料からなる壁と、
前記半導体ウエハ上の前記所定領域の外部に設けられた複数の配線と、
前記複数の配線上にそれぞれ設けられた複数の外部接続用電極と、
前記壁の外部に充填され、前記配線を封止する封止樹脂と、
前記壁の内部に充填され、前記所定領域を封止する透明樹脂と、
を備え、
前記複数の配線のうち何れかの配線が前記壁の下まで延在しており、その配線上に設けられた外部接続用電極がその配線を介して前記壁と導通することを特徴とする半導体構成体。 - 前記所定領域には、電子回路が設けられていることを特徴とする請求項1記載の半導体構成体。
- 前記壁及び前記外部接続用電極は、同一材料で形成されていることを特徴とする請求項1又は2に記載の半導体構成体。
- 前記壁及び前記外部接続用電極は、同じ高さに設定されていることを特徴とする請求項1〜3のいずれかに記載の半導体構成体。
- 前記壁と前記半導体ウエハとの間には、保護絶縁膜が介在されていることを特徴とする請求項1〜4のいずれかに記載の半導体構成体。
- 半導体ウエハ上の所定領域の外部に配置された配線層上に外部接続用電極を形成すると同時に、前記所定領域を囲む壁を形成し、
前記所定領域以外の上部空間を塞ぐ蓋を前記壁の上部に載置し、
前記所定領域を封止する透明樹脂を前記壁の内部に充填し、
前記蓋を除去し、
前記接続パッド及び前記配線を封止する封止樹脂を前記壁の外部に充填し、
前記透明樹脂とともに前記封止樹脂、前記外部接続用電極及び前記壁の上面を切削することを特徴とする半導体構成体の製造方法。
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