TWI493634B - 晶片封裝體及其形成方法 - Google Patents

晶片封裝體及其形成方法 Download PDF

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Publication number
TWI493634B
TWI493634B TW102125347A TW102125347A TWI493634B TW I493634 B TWI493634 B TW I493634B TW 102125347 A TW102125347 A TW 102125347A TW 102125347 A TW102125347 A TW 102125347A TW I493634 B TWI493634 B TW I493634B
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Taiwan
Prior art keywords
substrate
chip package
conductive pads
layer
forming
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TW102125347A
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English (en)
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TW201405676A (zh
Inventor
Yen Shih Ho
Shih Chin Chen
Yi Ming Chang
Chien Hui Chen
Chia Ming Cheng
Wei Luen Suen
Chen Han Chiang
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Xintex Inc
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Publication of TW201405676A publication Critical patent/TW201405676A/zh
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Publication of TWI493634B publication Critical patent/TWI493634B/zh

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Description

晶片封裝體及其形成方法
本發明係有關於晶片封裝體，且特別是有關於以晶圓級封裝製程所製得之晶片封裝體。
晶片封裝製程是形成電子產品過程中之一重要步驟。晶片封裝體除了將晶片保護於其中，使免受外界環境污染外，還提供晶片內部電子元件與外界之電性連接通路。
由於晶片尺寸的縮小與接墊數目的提升，在晶片封裝體中形成電性連接至接墊的線路更為困難。此外，晶片之切割製程的精準度會顯著影響所形成之晶片封裝體的可靠度與效能。因此，業界亟需改良的晶片封裝技術。
本發明一實施例提供一種晶片封裝體，包括：一半導體基底，具有一第一表面及相反之一第二表面；一元件區，設置於該半導體基底之中；一介電層，位於該半導體基底之該第一表面上；複數個導電墊，位於該介電層中，且電性連接該元件區；至少一對準標記，設置於該半導體基底之中，且自該第二表面朝該第一表面延伸。
本發明一實施例提供一種晶片封裝體的形成方法，包括：提供一基底，該基底由複數個預定切割道劃分成複數個晶粒區域，每一晶粒區域中形成有至少一元件區，其中一 介電層形成於該基底之一第一表面上，且複數個導電墊形成於該介電層之中，該些導電墊大抵沿著該些預定切割道排列；自該基底之一第二表面部分移除該基底以形成朝該第一表面延伸之複數個對準標記，其中該基底之每一該些晶粒區形成有至少一該些對準標記；於該基底之該第二表面上形成一絕緣層；於該絕緣層上形成複數個線路層，其中各該些線路層電性接觸對應的該些導電墊；以及透過該些對準標記之輔助，沿著該些預定切割道進行一切割製程以形成彼此分離之複數個晶片封裝體。
10‧‧‧晶片
100‧‧‧基底
100a、100b‧‧‧表面
102‧‧‧元件區
104‧‧‧介電層
106‧‧‧導電墊
108‧‧‧孔洞
110‧‧‧絕緣層
112‧‧‧線路層
114‧‧‧保護層
116‧‧‧導電凸塊
200‧‧‧基底
200a、200b‧‧‧表面
200c‧‧‧側面
202‧‧‧元件區
204、204a‧‧‧介電層
205‧‧‧微透鏡
206‧‧‧導電墊
207‧‧‧密封環結構
208、208c‧‧‧開口
208’‧‧‧凹陷
210‧‧‧絕緣層
212‧‧‧線路層
214‧‧‧保護層
216‧‧‧導電凸塊
218‧‧‧間隔層
220‧‧‧蓋層
222‧‧‧空腔
502、602‧‧‧對準標記
SC‧‧‧切割道
第1A顯示本案發明人所知之一種晶片封裝體的剖面圖。
第1B顯示本案發明人所知之一種晶片的上視圖。
第2A-2B圖顯示根據本發明一實施例之晶片封裝體的製程上視圖。
第3A-3F圖顯示根據本發明一實施例之晶片封裝體的製程剖面圖。
第4A-4C圖顯示根據本發明一實施例之晶片封裝體的製程立體圖。
第5A-5B圖顯示根據本發明一實施例之晶片封裝體的製程上視圖，用以說明本發明實施例之對準標記的形成。
第6圖顯示本案發明人所知之一晶圓的上視圖。
第7圖顯示根據本發明一實施例之晶片封裝體的上視圖。
以下將詳細說明本發明實施例之製作與使用方式。然應注意的是，本發明提供許多可供應用的發明概念，其可以多種特定形式實施。文中所舉例討論之特定實施例僅為製造與使用本發明之特定方式，非用以限制本發明之範圍。此外，在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本發明，不代表所討論之不同實施例及/或結構之間必然具有任何關連性。再者，當述及一第一材料層位於一第二材料層上或之上時，包括第一材料層與第二材料層直接接觸或間隔有一或更多其他材料層之情形。
本發明一實施例之晶片封裝體可用以封裝各種晶片。例如，在本發明之晶片封裝體的實施例中，其可應用於各種包含主動元件或被動元件(active or passive elements)、數位電路或類比電路(digital or analog circuits)等積體電路的電子元件(electronic components)，例如是有關於光電元件(opto electronic devices)、微機電系統(Micro Electro Mechanical System；MEMS)、微流體系統(micro fluidic systems)、或利用熱、光線及壓力等物理量變化來測量的物理感測器(Physical Sensor)。特別是可選擇使用晶圓級封裝(wafer scale package；WSP)製程對影像感測元件、發光二極體(light-emitting diodes；LEDs)、太陽能電池(solar cells)、射頻元件(RF circuits)、加速計(accelerators)、陀螺儀(gyroscopes)、微制動器(micro actuators)、表面聲波元件(surface acoustic wave devices)、壓力感測器(process sensors)噴墨頭(ink printer heads)、或功率金氧半場效電晶體模組(power MOSFET modules)等半導體晶片 進行封裝。
其中上述晶圓級封裝製程主要係指在晶圓階段完成封裝步驟後，再予以切割成獨立的封裝體，然而，在一特定實施例中，例如將已分離之半導體晶片重新分布在一承載晶圓上，再進行封裝製程，亦可稱之為晶圓級封裝製程。另外，上述晶圓級封裝製程亦適用於藉堆疊(stack)方式安排具有積體電路之多片晶圓，以形成多層積體電路(multi-layer integrated circuit devices)之晶片封裝體。在一實施中，上述切割後的封裝體係為一晶片尺寸封裝體(CSP；chip scale package)。晶片尺寸封裝體(CSP)之尺寸可僅略大於所封裝之晶片。例如，晶片尺寸封裝體之尺寸不大於所封裝晶片之尺寸的120%。
第1A顯示本案發明人所知之一種晶片封裝體的剖面圖，而第1B顯示本案發明人所知之一種晶片10的上視圖，其用以說明發明人所發現之問題。第1A圖係顯示沿著第1B圖之切線I-I’的剖面圖。
如第1B圖所示，所封裝之晶片10包括基底100。基底100中形成有元件區102。基底100之表面100a上設置有複數個導電墊106，其分別電性連接元件區102中之元件。導電墊106可設置於基底100的周邊區域上。如第1A圖之剖面圖所示，導電墊106可形成於基底100之表面100a上所形成之介電層104之中。此外，基底100中可形成有複數個由基底100之表面100b朝表面100a延伸之孔洞108。這些孔洞108可分別露出其下對應的導電墊106。
如第1A圖所示，可於基底100之表面100b上形成絕 緣層110，其可延伸於孔洞108之側壁上。複數個線路層112可形成於絕緣層110之上，並分別延伸進入對應的孔洞108之中而電性接觸對應的導電墊106。這些線路層112還可電性連接穿過保護層114之導電凸塊116。
然而，隨著晶片10中元件區102中的元件越來越密集，所需之導電墊106的數量也隨之增加。此外，隨著晶片10之尺寸的縮小化，每一導電墊106之面積亦隨之縮小，所形成露出導電墊106之孔洞108也需隨之縮小。因此，本案發明人認為，當孔洞108縮小至一定程度時，將面臨圖案化製程上之困難。此外，由於孔洞108之深寬比的提高，於孔洞108中形成材料層(例如，絕緣層110及導電層112)亦會更為困難。
第6圖顯示本案發明人所知之一晶圓的上視圖。如第6圖所示，為了使沿著基底200(例如，晶圓)之預定切割道SC的切割製程可準確且順利地進行，可於基底200之位於預定切割道SC的部分形成對準標記602。對準標記602可為形成於基底200中之孔洞或開口。由於對準標記602係形成於預定切割道SC之中，對準標記602不會受到晶粒區中之材料層覆蓋，且其位置亦不因材料層之堆疊而偏移。因此，基於對準標記602之標示，切割製程可準確地進行，可避免切割刀傷害晶粒區。
然而，在一些實施例中，需於預定切割道SC形成貫穿基底200或貫穿基底200及其下介電層之凹陷，其導致原先形成於預定切割道SC之對準標記602隨著基底200之移除而消失，使後續的切割製程難以對準。
因此，為了解決及/或改善上述可能將發生的問 題，發明人提出改良的晶片封裝技術。以下，將配合圖式說明本發明實施例以介紹本發明之晶片封裝技術。
第2A-2B圖顯示根據本發明一實施例之晶片封裝體的製程上視圖。第3A-3F圖顯示相應於第2A-2B圖實施例之製程剖面圖。第4A-4C圖顯示相應於第2A-2B圖實施例之製程立體圖。第5A-5B圖顯示根據本發明一實施例之晶片封裝體的製程上視圖，用以說明本發明實施例之對準標記的形成。在第2A-5B圖之實施例中，相同或相似之標號將用以標示相同或相似之元件。
在一實施例中，晶片封裝體之製程包括了前段晶片(晶圓)製程及後段封裝製程。透過例如是沈積、蝕刻、顯影等前段(front end)半導體製程，可以在晶圓上完成各種形式之積體電路的製作。之後，可對此完成積體電路製作之晶圓進行後段晶圓級封裝製程，再進行後續切割步驟以完成複數個彼此分離之晶片尺寸的封裝體。
如第3A圖所示，在一實施例中，首先在前段晶片製程中，提供基底200，其具有表面200a及表面200b。基底200例如為半導體基底。在一實施例中，基底200為半導體晶圓(例如是矽晶圓)。基底200可由複數個預定切割道SC劃分成複數個晶粒區域(die regions)。
基底200中可形成有或設置有複數個元件區202。在一實施例中，基底200之由預定切割道SC所劃分之複數個晶粒區域中，皆分別具有至少一元件區202及分別且對應圍繞每一元件區202之複數個周邊區。元件區202可包括各種包含主動 元件或被動元件、數位電路或類比電路等積體電路的電子元件，例如是光電元件、微機電系統、微流體系統、利用熱、光線及壓力等物理量變化來測量的物理感測器、或功率金氧半場效電晶體模組等。在第2圖實施例中，元件區202可包括光電元件，例如是影像感測元件或發光元件。
如第2A圖所示，基底200之表面上可形成有至少一介電層以作為絕緣披覆用途，其例如包括介電層204a及介電層204。介電層204與基底200之間可形成有複數個導電墊206。這些導電墊206可例如設置於基底200之周邊區上，並於周邊區上沿著鄰近預定切割道SC之位置排列。導電墊206可透過內連線結構(未顯示)而電性連接元件區202中之元件。在一實施例中，每一導電墊206可包括形成於介電層204中之複數個導電層之堆疊。這些堆疊的導電層可例如透過金屬內連線結構(未顯示)而彼此電性連接。
在一實施例中，導電墊206係於前段晶片製程中形成於介電層204內之既有導電墊，其與切割道SC邊緣可相隔一既定距離。亦即，在本例中，不需額外形成延伸至預定切割道SC邊緣或之上的延伸導電墊。由於導電墊206皆不延伸進入預定切割道SC，因此可避免接觸預定切割道SC上所設置之測試結構。
在一實施例中，介電層204中還可形成有複數個連續的密封環結構207或複數個不連續的密封環結構207，其可分別設置於基底200之晶粒區域的外圍上(或周邊區之外圍)，並圍繞內部之部分的周邊區與元件區202。在一實施例中，密封環 結構207可與導電墊206同時定義形成。因此，密封環結構207可與導電墊206為大抵相同之導電結構。此外，密封環結構207可設置於導電墊206之外圍或介於兩相鄰導電墊206與切割道SC邊緣所圍繞之區域中。因此，當後續沿著預定切割道進行切割製程時，密封環結構207可保護晶粒內部免受切割製程所造成之應力自切割道傳入而破壞所圍繞之元件或電路結構。
在完成前段晶片製程後，接續可對已形成有積體電路之晶圓進行後段封裝製程。對於光學晶片而言，可選擇性先行設置若干輔助光學元件。如第3A圖所示，在一實施例中，可於這些元件區202上分別設置微透鏡205。微透鏡205可包括微透鏡陣列。微透鏡205可用以輔助光線傳入元件區202之中或將來自元件區202所發出之光線導出。在一實施例中，可選擇性於微透鏡205上設置彩色濾光片(未顯示)。彩色濾光片例如可設置於微透鏡205與元件區202之間。
接著，可選擇性於基底200之表面200a上設置蓋層220。蓋層220可為一基底，如玻璃基底、石英基底、透明高分子基底、或前述之組合。在一實施例中，可於蓋層220與基底200之間設置間隔層218。間隔層218可選擇性設置為部分或完全覆蓋導電墊206，進而可橫跨於預定切割道SC上。間隔層218之材質例如為可感光之高分子材料，並可藉由曝光顯影步驟定義形成。間隔層218、蓋層220、及基底200可於元件區202上定義出大抵密閉之空腔222。空腔222可容納微透鏡205。在一實施例中，可先將間隔層218形成於蓋層220之上，接著接合於基底200上之介電層204之上。在一實施例中，間隔層218於曝光 顯影後仍具有黏性而可直接接合於基底200之上。在一實施例中，在將間隔層218接合至基底200之後，可對間隔層218進行固化製程，例如可對間隔層218加熱。或者，可透過黏著膠(未顯示)將間隔層218接合於基底200之上。在另一實施例中，亦可先將間隔層218形成於基底200之上，接著接合間隔層218與蓋層220。
接著，可選擇性薄化基底200。例如，可以蓋層220為支撐基底，並自基底200之表面200b進行薄化製程以將基底200薄化至適當厚度。適合的薄化製程例如包括機械研磨製程、化學機械研磨製程、蝕刻製程、或前述之組合。
接著，如第3B圖所示，可例如透過微影及蝕刻製程移除部分的基底200以形成自基底200之表面200b朝表面200a延伸之複數個開口208。接著，還可進一步移除部分的介電層204a而露出導電墊206。開口208可朝對應的預定切割道SC延伸，並超出對應的導電墊206。在一實施例中，開口208可分別露出對應的導電墊206及密封環結構207。
在一實施例中，可選擇性例如透過微影及蝕刻製程移除部分的基底200以形成自基底200之表面200b朝表面200a延伸之複數個凹陷208’(其例如為溝槽)。凹陷208’可位於預定切割道SC中。或者，凹陷208’可重疊預定切割道SC。在一實施例中，凹陷208’可與上述開口208相連通。在一實施例中，開口208與凹陷208’可於相同的圖案化製程中形成。
第2A圖及第4A圖分別顯示相應於第3B圖之結構的上視圖及立體圖。如第2A及4A圖所示，在一實施例中，這 些開口208分別由對應的導電墊206延伸進入對應的預定切割道SC之中而與所形成之凹陷208’相連通，並可進一步朝預定切割道SC另一側之導電墊206延伸以露出另一側之導電墊206。即，開口208可橫跨預定切割道SC而與凹陷208’相連通，並延伸至另一晶粒區域中之導電墊206以露出相鄰兩晶粒區域的導電墊206。在一實施例中，開口208之一寬度小於或等於導電墊206之寬度。由於開口208自導電墊206延伸進入預定切割道SC而與凹陷208’連通，且延伸至另一側之導電墊206，開口(包含開口208及凹陷208’)之深寬比可因而降低，有助於後續將形成於開口中沉積各種材料層。
如第5A圖所示，在一實施例中，可選擇性例如透過微影及蝕刻製程移除部分的基底200以形成自基底200之表面200b朝表面200a延伸之複數個對準標記502。對準標記502可為形成於基底200中之孔洞或開口。對準標記502之開口形狀可為圓形、矩形、多邊形、橢圓形、或其他適合的形狀。
對準標記502有別於第6圖所示之對準標記602。對準標記502不設置於預定切割道SC之中，而是位於晶粒區中之邊緣角落區域。因此，即使如第2A、3B、及4A圖所示，預定切割道SC上之基底200已被移除而形成凹陷208’，對準標記502仍可保留，如第5A圖所示。此外，雖然第5A圖於交叉的預定切割道SC附近設置了四個對準標記502，但本發明實施例不限於此。在其他實施例中，於交叉的預定切割道SC附近可僅設置三個或更少的對準標記502。舉凡可輔助後續切割製程順利進行之對準標記502設置方式，皆在本發明實施例涵蓋範圍之內。
在一實施例中，對準標記502可於形成了開口208及凹陷208’之後才形成。在另一實施例中，對準標記502可與開口208及凹陷208’於相同的圖案化製程(例如，微影製程及蝕刻製程)中同時形成。在一實施例中，對準標記502之口徑小於開口208。在此情形下，對準標記502之深度會小於開口208之深度或凹陷208’之深度。例如，開口208可貫穿基底200而露出正下方之導電墊206。對準標記502則可不貫穿基底200而具有較淺的深度。此外，在一實施例中，對準標記502之正下方不具有導電墊206。一般而言，對準標記502可設置於晶粒區之四個角落。在一實施例中，對準標記502可彼此對稱。例如，預定切割道SC之中心線可為對準標記502之對稱中心線。即，預定切割道SC之其中之一為晶粒區之兩相鄰晶粒區中的兩相鄰的對準標記502的對稱中心線。
接著，如第3C圖所示，可於基底200之表面200b上形成絕緣層210，其可延伸至開口208之內。絕緣層210可例如包括氧化物、氮化物、氮氧化物、高分子材料、或前述之組合。絕緣層210可藉由化學氣相沉積製程、物理氣相沉積製程、熱氧化製程、或塗佈製程而形成。接著，可透過微影及蝕刻製程移除開口208底部上之部分的絕緣層210而露出導電墊206。在另一實施例中，絕緣層210採用光阻材料。因此，可對絕緣層210進行曝光及顯影製程而將絕緣層210圖案化以露出導電墊206。在一實施例中，絕緣層210較佳仍完全覆蓋密封環結構207以避免後續形成之線路層接觸密封環結構207而造成短路。
在一實施例中，可不於對準標記502之中形成任何 的絕緣層。例如，在形成絕緣層210的過程中，絕緣材料可能會沉積於對準標記502之側壁及/或底部上。接著，可於絕緣層210的圖案化製程中，亦移除對準標記502之中的絕緣材料。
如第3D圖所示，接著於基底200之表面200b上的絕緣層210之上形成複數個線路層212。每一線路層212可自基底200之表面200b延伸進入對應的開口208而電性接觸對應的導電墊206。線路層212之材質可為導電材料，例如是金屬材料或其他適合的導電材料。在一實施例中，線路層212之材質可例如是銅、鋁、金、鉑、或前述之組合。線路層212的形成方法可包括物理氣相沉積、化學氣相沉積、塗佈、電鍍、無電鍍、或前述之組合。
在一實施例中，可先於基底200之表面200b上的絕緣層210之上形成導電層，接著透過微影及蝕刻製程將導電層圖案化為複數個線路層212。在另一實施例中，可先於基底200之表面200b上的絕緣層210之上形成晶種層(未顯示)。接著，可於晶種層上形成圖案化遮罩層(未顯示)。圖案化遮罩層可具有複數個露出部分晶種層之開口。接著，可透過電鍍製程於圖案化遮罩層之開口所露出之晶種層上電鍍導電材料。接著，可移除圖案化遮罩層，並可透過蝕刻製程移除原由圖案化遮罩層所覆蓋之晶種層以完成線路層212之製作。
第4B圖顯示對應於第3D圖之結構的立體圖。如第3D圖與第4B圖所示，複數個線路層212自基底200之表面200b上的絕緣層210之上分別延伸進入對應的開口208而電性接觸對應的開口208下方的對應的導電墊206。在一實施例中，每一 線路層212皆不延伸進入預定切割道SC之中或是與預定切割道SC相隔有一距離。如此，在後續沿著這些預定切割道SC進行切割製程時，切割刀片將不會碰觸到線路層212而造成線路層212受損或脫層。此外，線路層212與密封環結構207之間隔有絕緣層210線路層212與密封環結構207之間隔有絕緣層210，因而這些線路層212彼此之間不會發生短路。在此實施例中，由於開口208橫跨預定切割道SC並與溝槽208’連通而具有較大的口徑，因此於開口208中形成絕緣層及/或線路層將更為容易。
相似地，在一實施例中，可不於對準標記502之中形成任何的線路層。例如，在形成線路層212的過程中，導電材料可能會沉積於對準標記502之側壁及/或底部上。接著，可於線路層212的圖案化製程中，亦移除對準標記502之中的導電材料。因此，在一實施例中，對準標記502之中可不包含金屬材料。
接著，如第3E圖所示，於基底200之表面200b上形成保護層214。保護層214可包括防銲材料、綠漆、聚醯亞胺(polyimide)、或其他適合的絕緣材料。保護層214可例如藉由塗佈製程或噴塗製程而形成。保護層214可覆蓋基底200、線路層212、開口208及凹陷208’。接著，可將保護層214圖案化使之具有露出部分線路層212之開口。在一實施例中，亦可透過保護層214之圖案化製程而使保護層214不延伸進入預定切割道SC中(未顯示)。在一實施例中，保護層214可不覆蓋對準標記502。在另一實施例中，由於保護層214之厚度不會太厚，因此保護層214可覆蓋對準標記502。在此情形下，觀察者仍可辨 識保護層214下方之對準標記502。在一實施例中，保護層214可部分填充對準標記502。在另一實施例中，保護層214完全不填入對準標記502。
接著，可於露出的線路層212上形成導電凸塊216，其例如可為銲球。在一實施例中，可先於露出的線路層212上形成凸塊下金屬層(未顯示)以利導電凸塊216之形成。
接著，透過對準標記502之輔助，可精準地沿著預定切割道SC進行切割製程以形成彼此分離之複數個晶片封裝體。第3F圖顯示其中一晶片封裝體的剖面圖，而第2B圖及第4C圖分別顯示相應於第3F圖之結構的上視圖及立體圖。在切割製程之後，開口208之一部分成為晶片封裝體之基底的側面200c上之開口208c，如第2B或4C圖所示。
在一實施例中，開口208c露出對應的導電墊206，且沿著與基底200之側面200c交叉之一方向朝基底200之側面200c延伸而超出導電墊206的範圍。在一實施例中，開口208c係延伸至基底200之側面200c，如第4C圖所示。
第5B圖顯示晶片封裝體之上視圖，用以說明對準標記502之位置。為了清楚顯示對準標記502，開口208c及其中之絕緣層210與線路層212不顯示於第5B圖之中。如第5B圖所示，用於對準之對準標記502可位於晶片封裝體之基底200的邊緣角落區域。一般而言，對準標記502可形成於基底200之中，且位於晶片封裝體之基底200的四個邊緣角落區域。然而，本發明實施例不限於此。在其他實施例中，對準標記502可僅位於晶片封裝體之基底200的二個、三個、或單個邊緣角落區域。 在一實施例中，晶片封裝體具有多個對準標記502，且這些可彼此對稱。例如，晶片封裝體之基底200的中心點可為這些對準標記502之對稱中心。即，這些對準標記502以基底200之一中心點而彼此對稱。在一實施例中，晶片封裝體之基底200之一側邊附近的兩個對準標記502之連線可大抵平行於晶片封裝體之基底200之該側邊。
有別於一般晶片中於前段晶片製程所形成之對準標記，其由基底200之表面200a朝表面200b延伸，本發明實施例之對準標記502由於是在後段封裝製程中形成，對準標記502係由基底200之表面200b朝表面200a延伸。在一實施例中，對準標記502中不具有絕緣材料或金屬材料。此外，對準標記502之正下方可不具有導電墊206。再者，保護層214可覆蓋對準標記502。在另一實施例中，可透過圖案化製程使保護層214不覆蓋對準標記502，如第7圖所示。
本發明實施例所述之對準標記502除了可應用於上述實施例之外，還可應用於如第1A-1B圖所示之情形(TSV)，端視需求而定。
本發明實施例所述之封裝技術可有效減輕在晶片封裝體中形成電性連接至導電墊之線路的製程難度。本發明實施例係採用晶圓級封裝。透過於晶粒區設置對準標記，可確保後續的切割製程可準確且順利地進行。再者，隨著晶圓中晶粒之密度的提升，預定切割道之預留寬度可能隨之縮小。在此情形下，採用本發明實施例所述之對準標記為輔助而進行之晶圓級切割製程可更為準確，可確保所形成之晶片封裝體之可靠度 與品質。
本發明雖以較佳實施例揭露如上，然其並非用以限定本發明的範圍，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可做些許的更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
200‧‧‧基底
202‧‧‧元件區
214‧‧‧保護層
216‧‧‧導電凸塊
502‧‧‧對準標記

Claims (19)

  1. 一種晶片封裝體，包括：一半導體基底，具有一第一表面及相反之一第二表面；一元件區，設置於該半導體基底之中；一介電層，位於該半導體基底之該第一表面上；複數個導電墊，位於該介電層中，且電性連接該元件區；至少一對準標記，設置於該半導體基底之中，且自該第二表面朝該第一表面延伸，其中該至少一對準標記位於該半導體基底之一邊緣角落區域。
  2. 如申請專利範圍第1項所述之晶片封裝體，更包括：複數個開口，自該半導體基底之該第二表面朝該第一表面延伸，且分別露出對應的該些導電墊，且係朝向該半導體基底之一側面延伸而分別超出對應的該些導電墊；複數個線路層，位於該半導體基底之該第二表面上，且分別且對應地延伸進入該些開口而電性接觸該些導電墊；以及一絕緣層，設置於該半導體基底與該些線路層之間。
  3. 如申請專利範圍第2項所述之晶片封裝體，其中該些開口分別連通該半導體基底之該側面。
  4. 如申請專利範圍第2項所述之晶片封裝體，其中該至少一對準標記之中不具有該些線路層及該絕緣層。
  5. 如申請專利範圍第2項所述之晶片封裝體，其中該至少一對準標記之深度小於其中一該些開口之深度。
  6. 如申請專利範圍第1項所述之晶片封裝體，更包括一保護 層，該保護層覆蓋該半導體基底，其中該保護層覆蓋該至少一對準標記。
  7. 如申請專利範圍第6項所述之晶片封裝體，其中該保護層部分填充該至少一對準標記。
  8. 如申請專利範圍第1項所述之晶片封裝體，更包括一保護層，該保護層覆蓋該半導體基底，其中該保護層不覆蓋該至少一對準標記。
  9. 如申請專利範圍第1項所述之晶片封裝體，其中該至少一對準標記為複數個對準標記。
  10. 如申請專利範圍第9項所述之晶片封裝體，其中該半導體基底之一側邊附近的至少兩個該些對準標記的連線平行於該半導體基底之該側邊。
  11. 如申請專利範圍第9項所述之晶片封裝體，其中該些對準標記以該半導體基底之一中心點而彼此對稱。
  12. 如申請專利範圍第1項所述之晶片封裝體，其中至少一對準標記之正下方不具有任何的導電墊。
  13. 一種晶片封裝體的形成方法，包括：提供一基底，該基底由複數個預定切割道劃分成複數個晶粒區域，每一晶粒區域中形成有至少一元件區，其中一介電層形成於該基底之一第一表面上，且複數個導電墊形成於該介電層之中，該些導電墊沿著該些預定切割道排列；自該基底之一第二表面部分移除該基底以形成朝該第一表面延伸之複數個對準標記，其中該基底之每一該些晶粒區形成有至少一該些對準標記； 於該基底之該第二表面上形成一絕緣層；於該絕緣層上形成複數個線路層，其中各該些線路層電性接觸對應的該些導電墊；以及透過該些對準標記之輔助，沿著該些預定切割道進行一切割製程以形成彼此分離之複數個晶片封裝體。
  14. 如申請專利範圍第13項所述之晶片封裝體的形成方法，更包括：在形成該絕緣層之前，自該基底之該第二表面部分移除該基底以於該基底之中形成朝該第一表面延伸的複數個開口，其中該些開口分別對應地露出該些導電墊，且分別由對應的該些導電墊朝對應的該些預定切割道延伸，並超出對應的該些導電墊，其中在形成該絕緣層之後，該絕緣層延伸進入該些開口之中而覆蓋該些導電墊；以及在形成該些線路層之前，部分移除該絕緣層而露出該些導電墊，其中在形成該些線路層之後，各該些線路層延伸進入對應的該些開口中而電性接觸對應的該些導電墊。
  15. 如申請專利範圍第14項所述之晶片封裝體的形成方法，更包括自該基底之該第二表面部分移除該基底以於該基底之中形成朝該第一表面延伸的複數個凹陷，其中該些凹陷位於該些預定切割道之中，且與該些開口連通。
  16. 如申請專利範圍第15項所述之晶片封裝體的形成方法，其中該些對準標記、該些開口、及該些凹陷係於一相同的圖案化製程中同時形成。
  17. 如申請專利範圍第13項所述之晶片封裝體的形成方法，更 包括於該基底及該些線路層上形成一保護層，其中該保護層覆蓋該些對準標記。
  18. 如申請專利範圍第13項所述之晶片封裝體的形成方法，更包括於該基底及該些線路層上形成一保護層，其中該保護層不覆蓋該些對準標記。
  19. 如申請專利範圍第13項所述之晶片封裝體的形成方法，其中該些預定切割道之其中之一為該些晶粒區之兩相鄰晶粒區中的兩相鄰的該些對準標記的對稱中心線。
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