TWI629759B - 晶片封裝體及其製造方法 - Google Patents

晶片封裝體及其製造方法 Download PDF

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TWI629759B
TWI629759B TW106106082A TW106106082A TWI629759B TW I629759 B TWI629759 B TW I629759B TW 106106082 A TW106106082 A TW 106106082A TW 106106082 A TW106106082 A TW 106106082A TW I629759 B TWI629759 B TW I629759B
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Taiwan
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layer
insulating layer
redistribution layer
chip package
redistribution
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TW106106082A
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TW201733056A (zh
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林佳昇
賴炯霖
陳瑰瑋
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精材科技股份有限公司
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    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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Abstract

本發明揭露一種晶片封裝體，包括一基底。基底內的一感測區或元件區電性連接至一導電墊。一第一絕緣層位於基底上。一重佈線層位於第一絕緣層上。重佈線層的一第一部分及一第二部分電性連接至導電墊。一第二絕緣層順應性地延伸於第一絕緣層上且包覆第一部分及第二部分的側表面。一保護層位於第二絕緣層上。第二絕緣層的一部分位於保護層與第一絕緣層之間。本發明亦揭露一種晶片封裝體的製造方法。

Description

晶片封裝體及其製造方法
本發明係有關於一種半導體封裝技術，特別為有關於一種晶片封裝體及其製造方法。
晶片封裝製程是形成電子產品過程中之重要步驟。晶片封裝體除了將晶片保護於其中，使其免受外界環境污染外，還提供晶片內部電子元件與外界之電性連接通路，例如晶片封裝體內具有導線以形成導電路徑。隨著電子產品逐漸朝向小型化發展，晶片封裝體的尺寸也逐漸縮小。
然而，當晶片封裝體的尺寸縮小時，導線的厚度及寬度變小，且導線與導線之間的間距也變窄，使得密集的線路區域內容易產生電路故障的問題。舉例來說，由金屬所構成的導線與導線之間可能出現電遷移(electromigration)的現象及/或產生賈凡尼效應(Galvanic)，因而造成電性短路及/或斷路的問題，導致晶片封裝體的品質及可靠度降低。
因此，有必要尋求一種新穎的晶片封裝體及其製造方法，其能夠解決或改善上述的問題。
本發明實施例係提供一種晶片封裝體，包括一基 底。基底內的一感測區或元件區電性連接至一導電墊。一第一絕緣層位於基底上。一重佈線層位於第一絕緣層上。重佈線層的一第一部分及一第二部分電性連接至導電墊。一第二絕緣層順應性地延伸於第一絕緣層上且包覆第一部分及第二部分的側表面。一保護層位於第二絕緣層上。第二絕緣層的一部分位於保護層與第一絕緣層之間。
本發明實施例係提供一種晶片封裝體，包括一基底。基底內的一感測區或元件區電性連接至一導電墊。一第一絕緣層位於基底上。一第一重佈線層位於第一絕緣層上。第一重佈線層的一第一部分電性連接至導電墊。一第二重佈線層的一第一部分位於第一重佈線層的第一部分上，且第二重佈線層的一第二部分直接接觸第一絕緣層。
本發明實施例係提供一種晶片封裝體的製造方法，包括提供一基底。基底內的一感測區或元件區電性連接至一導電墊。在基底上形成一第一絕緣層。在第一絕緣層上形成一第二重佈線層。第二重佈線層的一第一部分及一第二部分電性連接至導電墊。形成一第二絕緣層。第二絕緣層順應性地延伸於第一絕緣層上且包覆第二重佈線層的第一部分及第二部分的側表面。在第二絕緣層上形成一保護層。第二絕緣層的一部分位於保護層與第一絕緣層之間。
100‧‧‧基底
100a‧‧‧前表面
100b‧‧‧背表面
100c‧‧‧側表面
110‧‧‧感測區或元件區
120‧‧‧晶片區
130‧‧‧絕緣層
140‧‧‧導電墊
150‧‧‧光學部件
160‧‧‧間隔層
170‧‧‧蓋板
180‧‧‧空腔
190‧‧‧第一開口
200‧‧‧第二開口
210‧‧‧第一絕緣層
220A‧‧‧第一部分
220B‧‧‧第二部分
230A‧‧‧第一部分
230B‧‧‧第二部分
240‧‧‧第二絕緣層
250‧‧‧保護層
260‧‧‧開口
270‧‧‧導電結構
SC‧‧‧切割道
第1A至1F圖係繪示出根據本發明一些實施例之晶片封裝體的製造方法的剖面示意圖。
第2A至2C圖係繪示出根據本發明一些實施例之晶片封裝體的製造方法的剖面示意圖。
第3圖係繪示出根據本發明一些實施例之晶片封裝體的剖面示意圖。
以下將詳細說明本發明實施例之製作與使用方式。然應注意的是，本發明提供許多可供應用的發明概念，其可以多種特定型式實施。文中所舉例討論之特定實施例僅為製造與使用本發明之特定方式，非用以限制本發明之範圍。此外，在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本發明，不代表所討論之不同實施例及/或結構之間具有任何關連性。再者，當述及一第一材料層位於一第二材料層上或之上時，包括第一材料層與第二材料層直接接觸或間隔有一或更多其他材料層之情形。
本發明一實施例之晶片封裝體可用以封裝微機電系統晶片。然其應用不限於此，例如在本發明之晶片封裝體的實施例中，其可應用於各種包含主動元件或被動元件(active or passive elements)、數位電路或類比電路(digital or analog circuits)等積體電路的電子元件(electronic components)，例如是有關於光電元件(opto electronic devices)、微機電系統(Micro Electro Mechanical System，MEMS)、生物辨識元件(biometric device)、微流體系統(micro fluidic systems)、或利用熱、光線、電容及壓力等物理量變化來測量的物理感測器(Physical Sensor)。特別是可選擇使用晶圓級封裝(wafer scale package， WSP)製程對影像感測元件、發光二極體(light-emitting diodes，LEDs)、太陽能電池(solar cells)、射頻元件(RF circuits)、加速計(accelerators)、陀螺儀(gyroscopes)、指紋辨識器(fingerprint recognition device)、微制動器(micro actuators)、表面聲波元件(surface acoustic wave devices)、壓力感測器(process sensors)或噴墨頭(ink printer heads)等半導體晶片進行封裝。
其中上述晶圓級封裝製程主要係指在晶圓階段完成封裝步驟後，再予以切割成獨立的封裝體，然而，在一特定實施例中，例如將已分離之半導體晶片重新分布在一承載晶圓上，再進行封裝製程，亦可稱之為晶圓級封裝製程。另外，上述晶圓級封裝製程亦適用於藉堆疊(stack)方式安排具有積體電路之多片晶圓，以形成多層積體電路(multi-layer integrated circuit devices)之晶片封裝體。
以下配合第1A至1F圖說明本發明一些實施例之晶片封裝體的製造方法，其中第1A至1F圖係繪示出根據本發明一些實施例之晶片封裝體的製造方法的剖面示意圖。
請參照第1A圖，提供一基底100，其具有一前表面100a及一背表面100b，且包括複數晶片區120。為簡化圖式，此處僅繪示出一完整的晶片區120及與其相鄰的晶片區120的一部分。在一些實施例中，基底100可為一矽基底或其他半導體基底。在一些實施例中，基底100為一矽晶圓，以利於進行晶圓級封裝製程。
基底100的前表面100a上具有一絕緣層130。一般 而言，絕緣層130可由層間介電層(interlayer dielectric，ILD)、金屬間介電層(inter-metal dielectric，IMD)及覆蓋之鈍化層(passivation)組成。為簡化圖式，此處僅繪示出單層絕緣層130。在一些實施例中，絕緣層130可包括無機材料，例如氧化矽、氮化矽、氮氧化矽、金屬氧化物或前述之組合或其他適合的絕緣材料。
在一些實施例中，每一晶片區120的絕緣層130內具有一個或一個以上的導電墊140。在一些實施例中，導電墊140可為單層導電層或具有多層之導電層結構。為簡化圖式，此處僅以單層導電層作為範例說明。在一些實施例中，每一晶片區120的絕緣層130內包括一個或一個以上的開口，露出對應的導電墊140。
在一些實施例中，每一晶片區120內具有一感測區或元件區110。感測區或元件區110可鄰近於絕緣層130及基底100的前表面100a，且可透過絕緣層130內的內連線結構(未繪示)與導電墊140電性連接。內連線結構包括各種導電特徵部件，例如導電線路、導電介層窗及導電插塞。
感測區或元件區110內包括一感測元件或其他適合的電子元件。在一些實施例中，感測區或元件區110內包括感光元件或其他適合的光電元件。在一些其他實施例中，感測區或元件區110內可包括感測生物特徵的元件(例如，一指紋辨識元件)、感測環境特徵的元件(例如，一溫度感測元件、一溼度感測元件、一壓力感測元件、一電容感測元件)或其他適合的感測元件。
在一些實施例中，可依序進行半導體裝置的前段(front end)製程(例如，在基底100內製作感測區或元件區110)及後段(back end)製程(例如，在基底100上製作絕緣層130、內連線結構及導電墊140)來提供前述結構。換句話說，以下晶片封裝體的製造方法係用於對完成後段製程的基底進行後續的封裝製程。
在一些實施例中，每一晶片區120內具有一光學部件150設置於基底100的前表面100a上，且對應於感測區或元件區110。在一些實施例中，光學部件150可為微透鏡陣列、濾光層、其組合或其他適合的光學部件。在一些其他實施例中，基底100的前表面100a上未設置光學部件150。
接著，在一蓋板170上形成一間隔層(或稱作圍堰(dam))160，透過間隔層160將蓋板170接合至基底100的前表面100a上，且間隔層160在每一晶片區120內的基底100與蓋板170之間形成一空腔180，使得光學部件150位於空腔180內，並透過蓋板170保護空腔180內的光學部件150。在一些其他實施例中，可先在基底100的前表面100a上形成間隔層160，之後將蓋板170接合至基底100上。
在一些實施例中，蓋板170可包括玻璃、氮化鋁(AlN)、或其他適合的透明材料。在一些其他實施例中，基底100的前表面100a上未設置光學部件，且蓋板170可包括半導體材料或其他適合的非透明材料。在一些實施例中，蓋板170為暫時性基底，且在後續製程中被去除。
在一些實施例中，間隔層160大致上不吸收水氣。 在一些實施例中，間隔層160不具有黏性，可透過額外的黏著膠將蓋板170貼附於基底100上。在一些其他實施例中，間隔層160具有黏性，因此可透過間隔層160將蓋板170貼附於基底100上，如此一來間隔層160可不與任何的黏著膠接觸，以確保間隔層160之位置不因黏著膠而移動。同時，由於不需使用黏著膠，可避免黏著膠溢流而污染光學部件150。在一些其他實施例中，以黏著層取代間隔層160，且基底100與蓋板170之間沒有形成空腔180。
在一些實施例中，可透過沉積製程(例如，塗佈製程、物理氣相沈積製程、化學氣相沈積製程或其他適合的製程)形成間隔層160。在一些實施例中，間隔層160可包括環氧樹脂、無機材料(例如，氧化矽、氮化矽、氮氧化矽、金屬氧化物或前述之組合)、有機高分子材料(例如，聚醯亞胺樹脂(polyimide)、苯環丁烯(butylcyclobutene，BCB)、聚對二甲苯(parylene)、萘聚合物(polynaphthalenes)、氟碳化物(fluorocarbons)、丙烯酸酯(acrylates))或其他適合的絕緣材料。或者，間隔層160可包括光阻材料，且可透過曝光及顯影製程而圖案化，以露出光學部件150。
請參照第1B圖，以蓋板170作為承載基底，對基底100的背表面100b進行薄化製程(例如，蝕刻製程、銑削(milling)製程、磨削(grinding)製程或研磨(polishing)製程)，以減少基底100的厚度。
接著，透過微影製程及蝕刻製程(例如，乾蝕刻製程、濕蝕刻製程、電漿蝕刻製程、反應性離子蝕刻製程或其他 適合的製程)，在每一晶片區120的基底100內同時形成複數第一開口190及第二開口200，第一開口190及第二開口200自基底100的背表面100b露出絕緣層130。在一些其他實施例中，可分別透過刻痕(notching)製程以及微影及蝕刻製程形成第二開口200以及第一開口190。
在一些實施例中，第一開口190對應於導電墊140而貫穿基底100，且第一開口190鄰近於前表面100a的口徑小於其鄰近於背表面100b的口徑，因此第一開口190具有傾斜的側表面，進而降低後續形成於第一開口190內的膜層的製程難度，並提高可靠度。舉例來說，由於第一開口190鄰近於前表面100a的口徑小於其鄰近於背表面100b的口徑，因此後續形成於第一開口190內的膜層(例如，後續形成的絕緣層及重佈線層)能夠較輕易地沉積於第一開口190與絕緣層130之間的轉角，以避免影響電性連接路徑或產生漏電流的問題。
在一些實施例中，第二開口200為一溝槽，第二開口200沿著相鄰晶片區120之間的切割道SC延伸且貫穿基底100，使得每一晶片區120內的基底100彼此分離。第二開口200鄰近於前表面100a的口徑小於其鄰近於背表面100b的口徑，因此第二開口200具有傾斜的側表面，亦即每一晶片區120內的基底100具有傾斜的側表面100c。
在一些實施例中，相鄰兩晶片區120內的多個第一開口190沿著第二開口200間隔排列，且第一開口190與第二開口200透過基底100的側壁部分互相間隔且完全隔離。
在一些實施例中，第二開口200可沿著晶片區120 延伸而環繞第一開口190。在一些其他實施例中，第一開口190與第二開口200連通。例如，第一開口190鄰近於背表面100b的部分與第二開口200鄰近於背表面100b的部分彼此連通，使得基底100具有一側壁部分低於背表面100b。換句話說，上述側壁部分的厚度小於基底100的厚度。由於第一開口190與第二開口200彼此連通，而並非透過基底100的一部分完全隔離，因此能夠防止應力累積於第一開口190與第二開口200之間的基底100，且可藉由第二開口200緩和及釋放應力，進而避免基底100的側壁部分出現破裂。
請參照第1C圖，可透過沉積製程(例如，塗佈製程、物理氣相沈積製程、化學氣相沈積製程或其他適合的製程)，在基底100的背表面100b上形成一第一絕緣層210，第一絕緣層210順應性地沉積於第一開口190及第二開口200的側壁及底部上。在一些實施例中，第一絕緣層210可包括環氧樹脂、無機材料(例如，氧化矽、氮化矽、氮氧化矽、金屬氧化物或前述之組合)、有機高分子材料(例如，聚醯亞胺樹脂、苯環丁烯、聚對二甲苯、萘聚合物、氟碳化物、丙烯酸酯)或其他適合的絕緣材料。
接著，可透過微影製程及蝕刻製程，去除第一開口190底部的第一絕緣層210及其下方的絕緣層130，使得第一開口190延伸至絕緣層130內而露出對應的導電墊140。
之後，可透過沉積製程(例如，塗佈製程、物理氣相沉積製程、化學氣相沉積製程、電鍍製程、無電鍍製程或其他適合的製程)、微影製程及蝕刻製程，在第一絕緣層210上形 成一層或多層圖案化的重佈線層。在一些實施例中，第一重佈線層包括互相電性連接的第一部分220A及第二部分220B，第二重佈線層包括互相電性連接的第一部分230A及第二部分230B。
在一些實施例中，第一重佈線層與第二重佈線層具有大致上相同的線路圖案，例如第一部分220A與第一部分230A完全重疊且第二部分220B與第二部分230B完全重疊。換句話說，第一部分220A的側表面與第一部分230A的側表面共平面，且第二部分220B的側表面與第二部分230B的側表面共平面。
在一些其他實施例中，第一重佈線層與第二重佈線層具有類似的線路圖案。第一部分230A可包覆第一部分220A的側表面及頂表面，且第二部分230B可包覆第二部分220B的側表面及頂表面，因此第一部分230A及第二部分230B延伸至直接接觸第一絕緣層210。
第一重佈線層與第二重佈線層的厚度可相同或不同。例如，第一重佈線層的厚度可小於第二重佈線層的厚度。在一些其他實施例中，圖案化的重佈線層僅由一層重佈線層所構成。或者，圖案化的重佈線層可包括三層或三層以上的重佈線層。
在一些實施例中，第一部分220A以及第一部分230A位於第一開口190的側壁及底部上，例如第一部分220A以及第一部分230A順應性地延伸於第一開口190的側壁及底部上，以電性連接導電墊140。第一部分220A以及第一部分230A 還自第一開口190內延伸至基底100的背表面100b上方，但第一部分220A以及第一部分230A僅局部覆蓋第一開口190周圍的背表面100b，如第1C圖所示。在一些實施例中，第一部分220A以及第一部分230A與導電墊140縱向地重疊，而未與感測區或元件區110縱向地重疊。
在一些實施例中，第二部分220B以及第二部分230B位於基底100的背表面100b上方，例如第二部分220B及/或第二部分230B縱向地重疊於感測區或元件區110，而未與導電墊140縱向地重疊。在一些其他實施例中，第二部分220B及/或第二部分230B可未與感測區或元件區110縱向地重疊。
在一些實施例中，第一部分220A、第二部分220B、第一部分230A及第二部分230B透過第一絕緣層210與基底100電性隔離。第一部分220A以及第一部分230A經由第一開口190直接電性接觸或間接電性連接露出的導電墊140。因此，第一開口190內的第一部分220A以及第一部分230A也可稱為矽通孔電極(through silicon via，TSV)。
在一些實施例中，第一部分220A、第二部分220B、第一部分230A及第二部分230B可包括鋁、鎳、金、銅、鉑、錫、鈦鎢、前述之組合、導電高分子材料、導電陶瓷材料(例如，氧化銦錫或氧化銦鋅)或其他適合的導電材料。舉例來說，第一部分220A及第二部分220B由鋁所構成，而第一部分230A及第二部分230B由鎳所構成。或者，第一部分220A及第二部分220B由鈦鎢所構成，而第一部分230A及第二部分230B由鋁及/或鎳所構成。
請參照第1D圖，可透過沉積製程(例如，塗佈製程、物理氣相沈積製程、化學氣相沈積製程或其他適合的製程)，在基底100的背表面100b上形成一第二絕緣層240。第二絕緣層240覆蓋圖案化的第一重佈線層及第二重佈線層，且與第一絕緣層210直接接觸。
第二絕緣層240自背表面100b沿著第一開口190及第二開口200的側壁及底部順應性地延伸於第一絕緣層210上，且第二絕緣層240覆蓋基底100的側表面100c。也就是說，位於第一開口190的側壁及底部上的第二絕緣層240的厚度大致上相同於位於第二開口200的側壁及底部上的第二絕緣層240的厚度，也大致上相同於位於背表面100b上的第二絕緣層240的厚度。
在一些實施例中，第二絕緣層240完全覆蓋第一部分220A及第二部分220B的側表面，且第二絕緣層240完全覆蓋第一部分230A及第二部分230B的側表面及頂表面。在一些實施例中，第一絕緣層210及第二絕緣層240共同包圍第二部分220B及第二部分230B。
在一些實施例中，一部分的第二絕緣層240側向地夾設於第一部分220A與第二部分220B之間。在一些實施例中，一部分的第二絕緣層240側向地夾設於兩個第二部分220B之間。
在一些實施例中，第二絕緣層240可包括無機材料(例如，氧化矽、氮化矽、氮氧化矽、金屬氧化物或前述之組合)或其他適合的絕緣材料。第二絕緣層240與第一絕緣層210 可由相同的材料或不同的材料所構成。在一些實施例中，第二絕緣層240由具有高絕緣性且大致上不吸收水氣的材料所構成。
在一些實施例中，第二絕緣層240的厚度小於第一絕緣層210的厚度。例如，第一絕緣層210的厚度可為大約0.5μm至大約4μm的範圍，而第二絕緣層240的厚度可為大約0.2μm至大約0.5μm的範圍。在一些實施例中，第二絕緣層240的厚度小於第一重佈線層及/或第二重佈線層的厚度。例如，第二絕緣層240的厚度小於第二部分220B的厚度及/或第二部分230B的厚度，或是第二絕緣層240的厚度小於第二部分220B加上第二部分230B的厚度。
請參照第1E圖，可透過沉積製程，在基底100的背表面100b上形成一保護層250。保護層250自背表面100b延伸至第二開口200內，且覆蓋基底100的側表面100c。保護層250與第二絕緣層240直接接觸。
在一些實施例中，保護層250填滿第二開口200。在一些其他實施例中，保護層250僅部分填充第二開口200而未完全填滿第二開口200。
在一些實施例中，保護層250封住第一開口190，但未填入第一開口190，使得第一開口190內的第二絕緣層240與保護層250之間形成一孔洞。在一些其他實施例中，保護層250可局部填充第一開口190或完全填滿第一開口190。
在一些實施例中，保護層250與第一部分220A、第二部分220B、第一部分230A及第二部分230B完全隔離而未直 接接觸。在一些實施例中，一部分的第二絕緣層240縱向及/或側向地夾設於第一部分230A與保護層250之間。一部分的第二絕緣層240縱向及/或側向地夾設於第二部分230B與保護層250之間。在一些實施例中，一部分的第二絕緣層240側向地夾設於第一部分220A與保護層250之間。一部分的第二絕緣層240側向地夾設於第二部分220B與保護層250之間。
在一些實施例中，保護層250與第一絕緣層210完全分離而未直接接觸。在一些實施例中，一部分的第二絕緣層240縱向地夾設於保護層250與第一絕緣層210之間，也側向地夾設於第一部分220A與第二部分220B之間。
在一些實施例中，保護層250可包括環氧樹脂、綠漆、無機材料(例如，氧化矽、氮化矽、氮氧化矽、金屬氧化物或前述之組合)、有機高分子材料(例如，聚醯亞胺樹脂、苯環丁烯、聚對二甲苯、萘聚合物、氟碳化物、丙烯酸酯)或其他適合的絕緣材料。
在一些實施例中，第二絕緣層240與保護層250由不同的材料所構成。舉例來說，第二絕緣層240的材料相較於保護層250的材料具有較高的絕緣性。再者，保護層250的材料可能會吸收水氣，而第二絕緣層240的材料不具吸水性。
接著，可透過微影製程及蝕刻製程，在基底100的背表面100b上的保護層250及第二絕緣層240內形成一個或多個開口260，以露出第二部分230B的一部分。
在一些實施例中，第二絕緣層240內的開口260的寬度相同於保護層250內的開口260的寬度。在一些其他實施例 中，第二絕緣層240內的開口260的寬度大於保護層250內的開口260的寬度。例如，採用濕式蝕刻製程形成開口260時，可能會對第二絕緣層240過度蝕刻而產生底切(under cut)現象。
請參照第1F圖，可透過電鍍製程、網版印刷製程或其他適合的製程，在開口260內填入導電結構270(例如，焊球、凸塊或導電柱)，以與露出的第二部分230B電性連接。在一些實施例中，導電結構270可包括錫、鉛、銅、金、鎳、或前述之組合。
在一些實施例中，導電結構270與第二絕緣層240直接接觸。在一些實施例中，導電結構270的下部被第二絕緣層240及保護層250連續地環繞。在一些實施例中，導電結構270與露出的第二部分230B之間可選擇性形成其他接合層，舉例來說，接合層可包括鎳層、金層、其他適合的材料層或其組合。在一些實施例中，接合層與第二絕緣層240直接接觸，而導電結構270與第二絕緣層240彼此分隔。
接著，沿著切割道SC(等同於沿著第二開口200)切割保護層250、第二絕緣層240、第一絕緣層210、間隔層160及蓋板170，以形成複數獨立的晶片封裝體。舉例來說，可使用切割刀具或雷射進行切割製程，其中使用雷射切割製程可以避免上下膜層發生位移。切割後的基底100及絕緣層130可視為一晶片/晶粒。
根據本發明的上述實施例，特別形成第二絕緣層來完全覆蓋圖案化的重佈線層的側表面及/或頂表面。第二絕緣層具有高絕緣性，且可有效隔絕外界的污染物，例如第二絕 緣層可防止水氣侵入圖案化的重佈線層內。如此一來，能夠藉由第二絕緣層減緩或消除圖案化的重佈線層之間的電遷移現象，避免第一重佈線層與第二重佈線層之間因離子遷移(例如，鎳或其他金屬離子)形成不必要的連接而造成短路，也避免第一重佈線層及/或第二重佈線層內因離子遷移出現空洞而造成斷路，因此可改善晶片封裝體的品質及可靠度。
以下配合第2A至2C圖說明本發明一些實施例之晶片封裝體的製造方法。第2A至2C圖係繪示出根據本發明一些實施例之晶片封裝體的製造方法的剖面示意圖，其中相同於第1A至1F圖中的部件係使用相同的標號並省略其說明。
請參照第2A圖，提供如第1B圖所示之結構，並透過與第1C圖相同或相似之步驟，形成第一絕緣層210。接著，可透過微影製程及蝕刻製程，去除第一開口190底部的第一絕緣層210及其下方的絕緣層130，使得第一開口190延伸至絕緣層130內而露出對應的導電墊140。
之後，可透過沉積製程(例如，塗佈製程、物理氣相沉積製程、化學氣相沉積製程、電鍍製程、無電鍍製程或其他適合的製程)、微影製程及蝕刻製程，在第一絕緣層210上形成圖案化的第一重佈線層。在一些實施例中，第一重佈線層包括第一部分220A。第一重佈線層可包括單層材料層或多層材料層。
在一些實施例中，第一部分220A位於第一開口190的側壁及底部上，例如第一部分220A順應性地延伸於第一開口190的側壁及底部上。第一部分220A還自第一開口190內延伸至 基底100的背表面100b上方，但第一部分220A僅局部覆蓋第一開口190周圍的背表面100b。在一些實施例中，第一部分220A與導電墊140縱向地重疊，而未與感測區或元件區110縱向地重疊。
在一些實施例中，第一部分220A可包括鋁、鎳、金、銅、鉑、錫、鈦鎢、前述之組合、導電高分子材料、導電陶瓷材料(例如，氧化銦錫或氧化銦鋅)或其他適合的導電材料。
在一些實施例中，第一部分220A作為導電墊140與後續形成於第一部分220A上方的材料層之間的隔離層。舉例來說，第一部分220A的材料(例如，鈦鎢或其他材料)可避免導電墊140的材料(例如，銅或其他材料)與後續形成的材料層(例如，鋁或其他材料)彼此反應而產生遷移或擴散現象。因此，第一部分220A能夠防止導電墊140與後續形成的材料層出現層離(delamination)的問題，也避免晶片封裝體的性能降低。
請參照第2B圖，可透過沉積製程(例如，塗佈製程、物理氣相沉積製程、化學氣相沉積製程、電鍍製程、無電鍍製程或其他適合的製程)、微影製程及蝕刻製程，在第一絕緣層210及第一部分220A上形成圖案化的第二重佈線層。在一些實施例中，第二重佈線層包括互相電性連接的第一部分230A及第二部分230B。第二重佈線層可包括單層材料層或多層材料層。
在一些實施例中，第一部分230A與第一部分220A具有大致上相同的線路圖案，例如第一部分230A與第一部分220A完全重疊。在一些其他實施例中，第一部分230A與第一 部分220A具有類似的線路圖案，例如第一部分230A可包覆第一部分220A的側表面及頂表面，因此第一部分230A延伸至直接接觸第一絕緣層210。
在一些實施例中，第一部分230A位於第一開口190內的第一部分220A上，例如第一部分230A沿著第一開口190的側壁及底部順應性地延伸。第一部分230A還自第一開口190內延伸至基底100的背表面100b上方，但第一部分230A僅局部覆蓋第一開口190周圍的背表面100b。
在一些實施例中，第一部分230A與導電墊140縱向地重疊，而未與感測區或元件區110縱向地重疊。在一些實施例中，第二部分230B位於基底100的背表面100b上方，例如第二部分230B縱向地重疊於感測區或元件區110，但第二部分230B未與導電墊140縱向地重疊。
在一些實施例中，第二部分230B的底表面低於第一部分230A的底表面，因此第二部分230B的底表面與第一部分230A的底表面不共平面。在一些實施例中，第二部分230B的底表面與一部分的第一部分220A的底表面大致上共平面。
在一些實施例中，第二部分230B與第一絕緣層210直接接觸，而一部分的第一部分220A將第一部分230A與第一絕緣層210互相分隔。在一些實施例中，一部分的第一部分220A夾設於第一部分230A與第一絕緣層210之間，另一部分的第一部分220A夾設於第一部分230A與導電墊140之間。
在一些實施例中，第一部分230A及第二部分230B可包括鋁、鎳、金、銅、鉑、錫、鈦鎢、前述之組合、導電高 分子材料、導電陶瓷材料(例如，氧化銦錫或氧化銦鋅)或其他適合的導電材料。在一些實施例中，第一部分220A由鈦鎢所構成，而第一部分230A及第二部分230B由鋁及/或鎳所構成。
在某些情況下，一層以上的重佈線層由不同的材料所構成，使得一層以上的重佈線層之間可能因不同的電位差而產生賈凡尼效應，導致不同的材料層之間產生置換反應。舉例來說，鈦鎢層和鎳層或其他材料層之間可能產生賈凡尼效應，導致鎳離子遷移或擴散至鈦鎢層內。
根據本發明的上述實施例，第一重佈線層僅包括作為隔離層的第一部分220A，而沒有形成於感測區或元件區110上的部份(例如，第1C圖所示之第二部分220B)，因此可避免感測區或元件區110上的第一重佈線層與第二重佈線層之間產生賈凡尼效應，進而確保晶片封裝體的電性表現。
在某些情況下，在沉積一層以上的重佈線層之後對一層以上的重佈線層進行蝕刻製程。然而，由於上層重佈線層覆蓋住下層重佈線層，蝕刻劑僅能自下層重佈線層的側表面進行去除，因此難以順利地將下層重佈線層圖案化，進而出現下層重佈線層的殘留物。
根據本發明的上述實施例，在沉積第二重佈線層之前，先對已沉積的第一重佈線層進行蝕刻製程，蝕刻劑可自第一重佈線層的整個頂表面進行去除，因此有利於第一重佈線層的圖案化，而不會產生殘留物。
舉例來說，先使用第一罩幕層將沉積的第一重佈線層圖案化為第一部分220A，之後沉積第二重佈線層，並使用 第二罩幕層將第二重佈線層圖案化為第一部分230A及第二部分230B，其中第一罩幕層與第二罩幕層具有不同的開口圖案。如此一來，能夠大致上完全去除位於感測區或元件區110上的第一重佈線層(例如，第1C圖所示之第二部分220B)，使得感測區或元件區110上不會出現第一重佈線層的殘留物，可避免殘留物對晶片封裝體的可靠度造成負面影響。
請參照第2C圖，可透過與第1E至1F圖相同或相似之步驟，依序形成保護層250、保護層250的開口260及導電結構270。接著，進行切割製程，以形成複數獨立的晶片封裝體。
在一些實施例中，保護層250未填入第一開口190，使得第一開口190內的第一部分230A與保護層250之間形成一孔洞。如此一來，後續製程中遭遇熱循環(Thermal Cycle)時，孔洞能夠作為保護層250與第一部分220A以及第一部分230A之間的緩衝，以降低由於熱膨脹係數不匹配所引發不必要的應力，且防止外界溫度或壓力劇烈變化時保護層250會過度拉扯第一部分220A以及第一部分230A，進而可避免靠近導電墊結構的第一部分220A以及第一部分230A剝離甚至斷路的問題。在一些其他實施例中，保護層250可局部填充第一開口190或完全填滿第一開口190。
在一些實施例中，保護層250與第一部分220A、第一部分230A及第二部分230B直接接觸。保護層250也與第一絕緣層210直接接觸。在一些實施例中，一部分的保護層250側向地夾設於第一部分220A與第二部分230B之間。一部分的保護層250側向地夾設於多個第二部分230B之間。在一些實施例 中，第二部分230B局部縱向地夾設於保護層250與第一絕緣層210之間。
在一些實施例中，導電結構270與露出的第二部分230B之間可選擇性形成其他接合層，舉例來說，接合層可包括鎳層、金層、其他適合的材料層或其組合。
本發明的上述各種實施例可解決密集的線路區域內產生電路故障的問題，特別是能夠減緩或消除電遷移現象及/或賈凡尼效應，因此可大幅提升晶片封裝體的品質及可靠度。
本發明的上述實施例也可具有許多變化及/或更動，例如第1A至1F圖的實施例也可與第2A至2C圖的實施例互相結合。舉例來說，請參照第3圖，提供如第2B圖所示之結構，並透過與第1D至1F圖相同或相似之步驟形成第3圖中的晶片封裝體。在第3圖中，第二部分230B與第二絕緣層240及第一絕緣層210直接接觸，且第二部分230B局部縱向地夾設於第二絕緣層240與第一絕緣層210之間。
可以理解的是，第3圖中的晶片封裝體可具有第1F圖及/或2C圖中的晶片封裝體所具有的前述優點及技術效果。
為了說明本發明實施例，此處使用具有前照式(frontside illumination，FSI)感測裝置的晶片封裝體作為範例。然而，本發明實施例也可適用於具有背照式(backside illumination，BSI)感測裝置的晶片封裝體。再者，上述晶片封裝體的製造方法並不限定於具有光學感測裝置的晶片封裝體，其亦可應用於其他類型的晶片封裝體，例如可應用於具有生物特徵感測元件或環境特徵感測元件的晶片封裝體、或其他 適合的晶片封裝體。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可更動與組合上述各種實施例。

Claims (21)

  1. 一種晶片封裝體，包括：一基底，其中該基底內的一感測區或元件區電性連接至一導電墊；一第一絕緣層，位於該基底上；一第一重佈線層，位於該第一絕緣層上，其中該第一重佈線層的一第一部分及一第二部分電性連接至該導電墊；一第二絕緣層，其中該第二絕緣層順應性地延伸於該第一絕緣層上且包覆該第一部分及該第二部分的側表面；一保護層，位於該第二絕緣層上，其中該第二絕緣層的一部分位於該保護層與該第一絕緣層之間；以及一導電結構，其中該導電結構位於該第一重佈線層的該第二部分上，且該導電結構的下部被該保護層及該第二絕緣層所環繞。
  2. 如申請專利範圍第1項所述之晶片封裝體，其中該第二絕緣層的該部分與該第一絕緣層及該保護層直接接觸。
  3. 如申請專利範圍第1項所述之晶片封裝體，其中該第二絕緣層的該部分夾設於該第一重佈線層的該第一部分與該第二部分之間。
  4. 如申請專利範圍第1項所述之晶片封裝體，其中該第二絕緣層的另一部分側向地夾設於該第一重佈線層的該第一部分與該保護層之間。
  5. 如申請專利範圍第1項所述之晶片封裝體，其中該第二絕緣層的材料不同於該保護層的材料。
  6. 一種晶片封裝體，包括：一基底，其中該基底內的一感測區或元件區電性連接至一導電墊；一第一絕緣層，位於該基底上；一第一重佈線層，位於該第一絕緣層上，其中該第一重佈線層的一第一部分電性連接至該導電墊；以及一第二重佈線層，其中該第二重佈線層的一第一部分位於該第一重佈線層的該第一部分上，且該第二重佈線層的一第二部分直接接觸該第一絕緣層。
  7. 如申請專利範圍第6項所述之晶片封裝體，其中該第二重佈線層的該第二部分縱向地重疊於該感測區或元件區。
  8. 如申請專利範圍第6項所述之晶片封裝體，其中該第一重佈線層的該第一部分局部夾設於該第一絕緣層與該第二重佈線層的該第一部分之間。
  9. 申請專利範圍第6項所述之晶片封裝體，其中該第一重佈線層的該第一部分局部夾設於該導電墊與該第二重佈線層的該第一部分之間。
  10. 如申請專利範圍第6項所述之晶片封裝體，其中該第二重佈線層的該第二部分的一底表面低於該第二重佈線層的該第一部分的一底表面，且與該第一重佈線層的該第一部分的一底表面共平面。
  11. 如申請專利範圍第6項所述之晶片封裝體，其中該第一重佈線層的材料不同於該第二重佈線層的材料。
  12. 如申請專利範圍第6項所述之晶片封裝體，更包括一第二絕 緣層，其中該第二絕緣層順應性地延伸於該第一絕緣層上且包覆該第一重佈線層的該第一部分的側表面、該第二重佈線層的該第一部分及該第二部分的側表面。
  13. 如申請專利範圍第12項所述之晶片封裝體，其中該第二絕緣層的一部分夾設於該第一重佈線層的該第一部分與該第二重佈線層的該第二部分之間。
  14. 如申請專利範圍第6項所述之晶片封裝體，更包括一保護層，其中該保護層位於該第二重佈線層上，且直接接觸該第一絕緣層、該第一重佈線層及該第二重佈線層。
  15. 如申請專利範圍第14項所述之晶片封裝體，其中該保護層的一部分夾設於該第一重佈線層的該第一部分與該第二重佈線層的該第二部分之間。
  16. 一種晶片封裝體的製造方法，包括：提供一基底，其中該基底內的一感測區或元件區電性連接至一導電墊；在該基底上形成一第一絕緣層；在該第一絕緣層上形成一第二重佈線層，其中該第二重佈線層的一第一部分及一第二部分電性連接至該導電墊；形成一第二絕緣層，其中該第二絕緣層順應性地延伸於該第一絕緣層上且包覆該第二重佈線層的該第一部分及該第二部分的側表面；以及在該第二絕緣層上形成一保護層，其中該第二絕緣層的一部分位於該保護層與該第一絕緣層之間。
  17. 如申請專利範圍第16項所述之晶片封裝體的製造方法，更 包括在形成該第二重佈線層之前，形成圖案化的一第一重佈線層，其中該第一重佈線層的一第一部分位於該第二重佈線層的該第一部分與該第一絕緣層之間。
  18. 如申請專利範圍第17項所述之晶片封裝體的製造方法，其中該第二重佈線層的該第二部分直接接觸該第一絕緣層。
  19. 如申請專利範圍第17項所述之晶片封裝體的製造方法，其中該第一重佈線層的該第一部分延伸至直接接觸該導電墊。
  20. 如申請專利範圍第17項所述之晶片封裝體的製造方法，其中該第二重佈線層的該第二部分的一底表面低於該第二重佈線層的該第一部分的一底表面，且與該第一重佈線層的該第一部分的一底表面共平面。
  21. 如申請專利範圍第16項所述之晶片封裝體的製造方法，更包括：在該保護層及該第二絕緣層內形成一開口，以露出該第二重佈線層的該第二部分；以及在該開口內形成一導電結構，其中該導電結構的下部被該保護層及該第二絕緣層所環繞。
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