CN100401427C - 非易失性半导体存储器 - Google Patents

非易失性半导体存储器 Download PDF

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Publication number
CN100401427C
CN100401427C CNB2005100600726A CN200510060072A CN100401427C CN 100401427 C CN100401427 C CN 100401427C CN B2005100600726 A CNB2005100600726 A CN B2005100600726A CN 200510060072 A CN200510060072 A CN 200510060072A CN 100401427 C CN100401427 C CN 100401427C
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CN
China
Prior art keywords
voltage
circuit
well
switch
row decoder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100600726A
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English (en)
Chinese (zh)
Other versions
CN1677572A (zh
Inventor
河合贤
圆山敬史
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1677572A publication Critical patent/CN1677572A/zh
Application granted granted Critical
Publication of CN100401427C publication Critical patent/CN100401427C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
CNB2005100600726A 2004-03-31 2005-03-31 非易失性半导体存储器 Expired - Fee Related CN100401427C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004106210A JP4426361B2 (ja) 2004-03-31 2004-03-31 不揮発性半導体記憶装置
JP106210/2004 2004-03-31

Publications (2)

Publication Number Publication Date
CN1677572A CN1677572A (zh) 2005-10-05
CN100401427C true CN100401427C (zh) 2008-07-09

Family

ID=35050009

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100600726A Expired - Fee Related CN100401427C (zh) 2004-03-31 2005-03-31 非易失性半导体存储器

Country Status (3)

Country Link
US (1) US7088620B2 (enExample)
JP (1) JP4426361B2 (enExample)
CN (1) CN100401427C (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
US7352609B2 (en) * 2005-08-15 2008-04-01 International Business Machines Corporation Voltage controlled static random access memory
US7466582B2 (en) * 2005-08-15 2008-12-16 International Business Machines Corporation Voltage controlled static random access memory
JP2007310936A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体記憶装置
CN100536029C (zh) * 2006-07-14 2009-09-02 威刚科技股份有限公司 非挥发性储存装置及其控制方法
US7499325B2 (en) * 2006-12-21 2009-03-03 Intel Corporation Flash memory device with improved erase operation
US7701784B2 (en) * 2007-11-02 2010-04-20 Kabushiki Kaisha Toshiba Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
US7551508B2 (en) * 2007-11-16 2009-06-23 International Business Machines Corporation Energy efficient storage device using per-element selectable power supply voltages
JP5367977B2 (ja) * 2007-12-12 2013-12-11 セイコーインスツル株式会社 不揮発性半導体記憶装置およびその書き込み方法と読み出し方法
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US7978558B2 (en) * 2008-03-24 2011-07-12 Active-Semi, Inc. In-circuit programming of output voltage and output current characteristics of a PSR power supply
JP5315087B2 (ja) * 2009-02-20 2013-10-16 セイコーインスツル株式会社 昇圧回路
JP2011211767A (ja) * 2010-03-29 2011-10-20 Toshiba Corp 半導体集積回路装置
JP5863229B2 (ja) * 2010-04-30 2016-02-16 スパンション エルエルシー 電源回路
KR101132018B1 (ko) * 2010-07-09 2012-04-02 주식회사 하이닉스반도체 전압 스위치 회로 및 이를 이용한 불휘발성 메모리 장치
DE102011056141A1 (de) * 2010-12-20 2012-06-21 Samsung Electronics Co., Ltd. Negativspannungsgenerator, Dekoder, nicht-flüchtige Speichervorrichtung und Speichersystem, das eine negative Spannung verwendet
US8509001B2 (en) * 2011-06-27 2013-08-13 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
KR101772582B1 (ko) 2011-07-06 2017-08-30 삼성전자주식회사 음전압을 제공하는 비휘발성 메모리 장치
WO2013128806A1 (ja) * 2012-02-28 2013-09-06 パナソニック株式会社 昇圧回路
US9607708B2 (en) 2012-03-07 2017-03-28 Medtronic, Inc. Voltage mode sensing for low power flash memory
US9053791B2 (en) * 2012-03-07 2015-06-09 Medtronic, Inc. Flash memory with integrated ROM memory cells
JP2013239215A (ja) * 2012-05-11 2013-11-28 Toshiba Corp 半導体記憶装置
JP2014179148A (ja) * 2013-03-15 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置
CN105097035A (zh) * 2014-04-25 2015-11-25 北京兆易创新科技股份有限公司 一种电压切换方法和装置
JP5745136B1 (ja) * 2014-05-09 2015-07-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法
US9728231B1 (en) 2016-05-03 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method for data-writing
JP6659478B2 (ja) * 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置
JP7009223B2 (ja) * 2018-01-11 2022-01-25 ラピスセミコンダクタ株式会社 電源切替制御回路
JP7065637B2 (ja) * 2018-02-22 2022-05-12 ルネサスエレクトロニクス株式会社 半導体装置
US10714166B2 (en) * 2018-08-13 2020-07-14 Micron Technology, Inc. Apparatus and methods for decoding memory access addresses for access operations
CN111508546B (zh) * 2019-01-31 2023-06-27 群联电子股份有限公司 解码方法、存储器控制电路单元与存储器存储装置
CN113470710B (zh) * 2020-03-31 2024-03-26 长鑫存储技术有限公司 半导体存储器
CN111583982B (zh) * 2020-05-13 2022-04-15 合肥中科智存科技有限公司 字线升压方法、装置、存储器和计算机存储介质
JP7558123B2 (ja) 2021-07-21 2024-09-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
CN115620769B (zh) * 2022-10-08 2025-05-27 北京后摩集成电路科技有限公司 存储器控制电路、芯片及计算装置
US20240233825A9 (en) * 2022-10-21 2024-07-11 Micron Technology, Inc. Voltage regulator supply for independent wordline reads
CN118072772A (zh) * 2022-11-23 2024-05-24 长江存储科技有限责任公司 用于nand闪存存储器的高压开关

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5333122A (en) * 1991-11-29 1994-07-26 Nec Corporation Electrically erasable and programmable non-volatile semiconductor memory device having word line voltage control circuit using internal voltage booster circuit
CN1190785A (zh) * 1997-01-30 1998-08-19 日本电气株式会社 非易失性半导体存储器
GB2343276A (en) * 1998-10-30 2000-05-03 Samsung Electronics Co Ltd Non-volatile semiconductor memory device and method of driving word lines thereof
US20020036923A1 (en) * 2000-08-07 2002-03-28 Samsung Electronics Co., Ltd. Row decoder for a nonvolatile memory device
US6487120B2 (en) * 2000-05-25 2002-11-26 Kabushiki Kaisha Toshiba Boosted voltage generating circuit and semiconductor memory device having the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793026B2 (ja) * 1989-09-20 1995-10-09 富士通株式会社 デコーダ回路
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
JPH05290587A (ja) 1992-04-03 1993-11-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
DE69514791T2 (de) * 1995-07-24 2000-07-20 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit onchip-Löschung-Source-Spannungsgenerator
JP3756067B2 (ja) * 2001-01-29 2006-03-15 シャープ株式会社 不揮発性半導体記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5333122A (en) * 1991-11-29 1994-07-26 Nec Corporation Electrically erasable and programmable non-volatile semiconductor memory device having word line voltage control circuit using internal voltage booster circuit
CN1190785A (zh) * 1997-01-30 1998-08-19 日本电气株式会社 非易失性半导体存储器
GB2343276A (en) * 1998-10-30 2000-05-03 Samsung Electronics Co Ltd Non-volatile semiconductor memory device and method of driving word lines thereof
US6487120B2 (en) * 2000-05-25 2002-11-26 Kabushiki Kaisha Toshiba Boosted voltage generating circuit and semiconductor memory device having the same
US20020036923A1 (en) * 2000-08-07 2002-03-28 Samsung Electronics Co., Ltd. Row decoder for a nonvolatile memory device

Also Published As

Publication number Publication date
CN1677572A (zh) 2005-10-05
JP2005293697A (ja) 2005-10-20
JP4426361B2 (ja) 2010-03-03
US7088620B2 (en) 2006-08-08
US20050232013A1 (en) 2005-10-20

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Granted publication date: 20080709

Termination date: 20170331