JP4426361B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

Info

Publication number
JP4426361B2
JP4426361B2 JP2004106210A JP2004106210A JP4426361B2 JP 4426361 B2 JP4426361 B2 JP 4426361B2 JP 2004106210 A JP2004106210 A JP 2004106210A JP 2004106210 A JP2004106210 A JP 2004106210A JP 4426361 B2 JP4426361 B2 JP 4426361B2
Authority
JP
Japan
Prior art keywords
voltage
well
circuit
input terminal
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004106210A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005293697A (ja
JP2005293697A5 (enExample
Inventor
賢 河合
敬史 圓山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2004106210A priority Critical patent/JP4426361B2/ja
Priority to US11/080,424 priority patent/US7088620B2/en
Priority to CNB2005100600726A priority patent/CN100401427C/zh
Publication of JP2005293697A publication Critical patent/JP2005293697A/ja
Publication of JP2005293697A5 publication Critical patent/JP2005293697A5/ja
Application granted granted Critical
Publication of JP4426361B2 publication Critical patent/JP4426361B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2004106210A 2004-03-31 2004-03-31 不揮発性半導体記憶装置 Expired - Fee Related JP4426361B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004106210A JP4426361B2 (ja) 2004-03-31 2004-03-31 不揮発性半導体記憶装置
US11/080,424 US7088620B2 (en) 2004-03-31 2005-03-16 Nonvolatile semiconductor memory device
CNB2005100600726A CN100401427C (zh) 2004-03-31 2005-03-31 非易失性半导体存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004106210A JP4426361B2 (ja) 2004-03-31 2004-03-31 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005293697A JP2005293697A (ja) 2005-10-20
JP2005293697A5 JP2005293697A5 (enExample) 2007-03-01
JP4426361B2 true JP4426361B2 (ja) 2010-03-03

Family

ID=35050009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004106210A Expired - Fee Related JP4426361B2 (ja) 2004-03-31 2004-03-31 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US7088620B2 (enExample)
JP (1) JP4426361B2 (enExample)
CN (1) CN100401427C (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
US7352609B2 (en) * 2005-08-15 2008-04-01 International Business Machines Corporation Voltage controlled static random access memory
US7466582B2 (en) * 2005-08-15 2008-12-16 International Business Machines Corporation Voltage controlled static random access memory
JP2007310936A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体記憶装置
CN100536029C (zh) * 2006-07-14 2009-09-02 威刚科技股份有限公司 非挥发性储存装置及其控制方法
US7499325B2 (en) * 2006-12-21 2009-03-03 Intel Corporation Flash memory device with improved erase operation
US7701784B2 (en) * 2007-11-02 2010-04-20 Kabushiki Kaisha Toshiba Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
US7551508B2 (en) * 2007-11-16 2009-06-23 International Business Machines Corporation Energy efficient storage device using per-element selectable power supply voltages
JP5367977B2 (ja) * 2007-12-12 2013-12-11 セイコーインスツル株式会社 不揮発性半導体記憶装置およびその書き込み方法と読み出し方法
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US7978558B2 (en) * 2008-03-24 2011-07-12 Active-Semi, Inc. In-circuit programming of output voltage and output current characteristics of a PSR power supply
JP5315087B2 (ja) * 2009-02-20 2013-10-16 セイコーインスツル株式会社 昇圧回路
JP2011211767A (ja) * 2010-03-29 2011-10-20 Toshiba Corp 半導体集積回路装置
JP5863229B2 (ja) * 2010-04-30 2016-02-16 スパンション エルエルシー 電源回路
KR101132018B1 (ko) * 2010-07-09 2012-04-02 주식회사 하이닉스반도체 전압 스위치 회로 및 이를 이용한 불휘발성 메모리 장치
DE102011056141A1 (de) * 2010-12-20 2012-06-21 Samsung Electronics Co., Ltd. Negativspannungsgenerator, Dekoder, nicht-flüchtige Speichervorrichtung und Speichersystem, das eine negative Spannung verwendet
US8509001B2 (en) * 2011-06-27 2013-08-13 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
KR101772582B1 (ko) 2011-07-06 2017-08-30 삼성전자주식회사 음전압을 제공하는 비휘발성 메모리 장치
WO2013128806A1 (ja) * 2012-02-28 2013-09-06 パナソニック株式会社 昇圧回路
US9607708B2 (en) 2012-03-07 2017-03-28 Medtronic, Inc. Voltage mode sensing for low power flash memory
US9053791B2 (en) * 2012-03-07 2015-06-09 Medtronic, Inc. Flash memory with integrated ROM memory cells
JP2013239215A (ja) * 2012-05-11 2013-11-28 Toshiba Corp 半導体記憶装置
JP2014179148A (ja) * 2013-03-15 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置
CN105097035A (zh) * 2014-04-25 2015-11-25 北京兆易创新科技股份有限公司 一种电压切换方法和装置
JP5745136B1 (ja) * 2014-05-09 2015-07-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法
US9728231B1 (en) 2016-05-03 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method for data-writing
JP6659478B2 (ja) * 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置
JP7009223B2 (ja) * 2018-01-11 2022-01-25 ラピスセミコンダクタ株式会社 電源切替制御回路
JP7065637B2 (ja) * 2018-02-22 2022-05-12 ルネサスエレクトロニクス株式会社 半導体装置
US10714166B2 (en) * 2018-08-13 2020-07-14 Micron Technology, Inc. Apparatus and methods for decoding memory access addresses for access operations
CN111508546B (zh) * 2019-01-31 2023-06-27 群联电子股份有限公司 解码方法、存储器控制电路单元与存储器存储装置
CN113470710B (zh) * 2020-03-31 2024-03-26 长鑫存储技术有限公司 半导体存储器
CN111583982B (zh) * 2020-05-13 2022-04-15 合肥中科智存科技有限公司 字线升压方法、装置、存储器和计算机存储介质
JP7558123B2 (ja) 2021-07-21 2024-09-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
CN115620769B (zh) * 2022-10-08 2025-05-27 北京后摩集成电路科技有限公司 存储器控制电路、芯片及计算装置
US20240233825A9 (en) * 2022-10-21 2024-07-11 Micron Technology, Inc. Voltage regulator supply for independent wordline reads
CN118072772A (zh) * 2022-11-23 2024-05-24 长江存储科技有限责任公司 用于nand闪存存储器的高压开关

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793026B2 (ja) * 1989-09-20 1995-10-09 富士通株式会社 デコーダ回路
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
JPH05151789A (ja) * 1991-11-29 1993-06-18 Nec Corp 電気的に書込・一括消去可能な不揮発性半導体記憶装置
JPH05290587A (ja) 1992-04-03 1993-11-05 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
DE69514791T2 (de) * 1995-07-24 2000-07-20 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit onchip-Löschung-Source-Spannungsgenerator
JP3156618B2 (ja) * 1997-01-30 2001-04-16 日本電気株式会社 不揮発性半導体記憶装置
KR100290283B1 (ko) 1998-10-30 2001-05-15 윤종용 불휘발성 반도체 메모리 장치 및 그의 워드 라인 구동 방법
JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
KR100381962B1 (ko) 2000-08-07 2003-05-01 삼성전자주식회사 비휘발성 메모리 장치의 로우 디코더
JP3756067B2 (ja) * 2001-01-29 2006-03-15 シャープ株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CN1677572A (zh) 2005-10-05
JP2005293697A (ja) 2005-10-20
CN100401427C (zh) 2008-07-09
US7088620B2 (en) 2006-08-08
US20050232013A1 (en) 2005-10-20

Similar Documents

Publication Publication Date Title
JP4426361B2 (ja) 不揮発性半導体記憶装置
US6600692B2 (en) Semiconductor device with a voltage regulator
KR0159455B1 (ko) 반도체 집적회로장치
US7359249B2 (en) Nonvolatile semiconductor memory device and method of rewriting data thereof
JP5104118B2 (ja) 内部電源回路
JPH097383A (ja) 不揮発性半導体メモリ装置とそのワードライン駆動方法
US20030107919A1 (en) Nonvolatile semiconductor memory and method for controlling programming voltage of nonvolatile semiconductor memory
JP2002373495A (ja) 半導体チップ、半導体集積回路装置及び半導体集積回路装置の製造方法
US6735120B2 (en) Semiconductor device having a high-speed data read operation
JPH08235884A (ja) 基準回路
JP2001210086A (ja) 電圧発生回路
JP3207768B2 (ja) 半導体装置
KR100605275B1 (ko) 반도체 기억 장치
US6603700B2 (en) Non-volatile semiconductor memory device having reduced power requirements
JP2008262669A (ja) 半導体記憶装置
US8264274B2 (en) Non-volatile memory device and charge pump circuit for the same
JP4680195B2 (ja) 半導体装置及びソース電圧制御方法
KR20010085522A (ko) 마이너스 전위 검지 회로, 및 마이너스 전위 검지 회로를구비한 반도체 기억 장치
JP3294153B2 (ja) 半導体メモリ
US7710806B2 (en) Memory device and method for improving speed at which data is read from non-volatile memory
JPH04192196A (ja) 不揮発性半導体記憶装置
KR20000027296A (ko) 플래쉬 메모리셀의 로우 디코더 회로
JP2006216196A (ja) 不揮発性半導体記憶装置
JP2007058972A (ja) 半導体集積回路
JP2012226810A (ja) レプリカ回路、高電圧検出回路、高電圧レギュレータ回路及び不揮発性半導体記憶装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090522

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090717

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091210

R150 Certificate of patent or registration of utility model

Ref document number: 4426361

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121218

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131218

Year of fee payment: 4

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees