CN100394553C - 用于增加可用平面表面积的半导体晶片处理方法 - Google Patents
用于增加可用平面表面积的半导体晶片处理方法 Download PDFInfo
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- CN100394553C CN100394553C CNB018214479A CN01821447A CN100394553C CN 100394553 C CN100394553 C CN 100394553C CN B018214479 A CNB018214479 A CN B018214479A CN 01821447 A CN01821447 A CN 01821447A CN 100394553 C CN100394553 C CN 100394553C
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (60)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200810095552.XA CN101373713B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
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AUPR1748 | 2000-11-29 | ||
AUPR1748A AUPR174800A0 (en) | 2000-11-29 | 2000-11-29 | Semiconductor processing |
Related Child Applications (3)
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CN200810095552.XA Division CN101373713B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CN2008100955515A Division CN101286449B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CN2008100955500A Division CN101299410B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
Publications (2)
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CN1592952A CN1592952A (zh) | 2005-03-09 |
CN100394553C true CN100394553C (zh) | 2008-06-11 |
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CN200810095552.XA Expired - Fee Related CN101373713B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CNB018214479A Expired - Fee Related CN100394553C (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CN2008100955515A Expired - Fee Related CN101286449B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CN2008100955500A Expired - Fee Related CN101299410B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
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CN200810095552.XA Expired - Fee Related CN101373713B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
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CN2008100955515A Expired - Fee Related CN101286449B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
CN2008100955500A Expired - Fee Related CN101299410B (zh) | 2000-11-29 | 2001-11-29 | 用于增加可用平面表面积的半导体晶片处理方法 |
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US (5) | US7875794B2 (zh) |
EP (5) | EP2273556A3 (zh) |
JP (1) | JP4416399B2 (zh) |
KR (3) | KR100883997B1 (zh) |
CN (4) | CN101373713B (zh) |
AU (4) | AUPR174800A0 (zh) |
CA (4) | CA2727658A1 (zh) |
IL (2) | IL156166A0 (zh) |
MY (1) | MY142148A (zh) |
WO (1) | WO2002045143A1 (zh) |
ZA (1) | ZA200304155B (zh) |
Families Citing this family (120)
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AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
KR20040068928A (ko) * | 2001-11-29 | 2004-08-02 | 오리진 에너지 솔라 피티와이 리미티드 | 반도체 가공 방법 |
US8294025B2 (en) | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
US7535019B1 (en) | 2003-02-18 | 2009-05-19 | Nanosolar, Inc. | Optoelectronic fiber |
AU2003902270A0 (en) * | 2003-05-09 | 2003-05-29 | Origin Energy Solar Pty Ltd | Separating and assembling semiconductor strips |
DE10320868B4 (de) * | 2003-05-09 | 2008-09-04 | Bayerisches Zentrum für angewandte Energieforschung e.V. (ZAE Bayern) | Photovoltaikeinrichtung und Verfahren zu deren Herstellung |
US20080223429A1 (en) * | 2004-08-09 | 2008-09-18 | The Australian National University | Solar Cell (Sliver) Sub-Module Formation |
EP1779415A4 (en) * | 2004-08-09 | 2011-12-28 | Transform Solar Pty Ltd | FORMATION OF A SOLAR CELL SUBMODULE (SILVER) |
JP2006128211A (ja) * | 2004-10-26 | 2006-05-18 | Disco Abrasive Syst Ltd | ウエーハの分割装置 |
US20090107545A1 (en) | 2006-10-09 | 2009-04-30 | Soltaix, Inc. | Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080611 Termination date: 20171129 |
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CF01 | Termination of patent right due to non-payment of annual fee |